EERF 6396 HW Set #1

OBJECTIVES: This design exercise is intended to review basic RF/microwave design principles and gain familiarity with AWR Microwave Office simulations. CAD Software: Download a free 120-day license of AWR Microwave Office from the AWR website [http://web.awrcorp.com/Usa/Contact/University-Program/]. If you are not familiar with MWO, perform the tutorial which is found on the Help menu, Getting Started. Design the following components, create the circuit in MWO and simulate the requested parameters. Copy schematics and plots into Word, provide your answers to the questions and submit by email to randall.lehmann@utdallas.edu by the due date. Use 50- port impedances, which will be the default in MWO. Use the closed form model for a microstrip line, MLIN, found in the Elements tab under Microstrip and Lines. The microstrip substrate definition, MSUB (found in the Elements tab under Substrates), will also be required. Use MBENDA$ to provide optimally mitered microstrip junctions. Construct a microstrip circuit that has four bends, such as:

PORT P=1 Z=50 Ohm

MLIN ID=TL1 W=W1 mm L=10 mm

MBENDA$ ID=TL3 ANG=90 Deg

MBENDA$ ID=TL9 ANG=90 Deg

MLIN ID=TL2 W=W1 mm L=10 mm

PORT P=2 Z=50 Ohm

MLIN ID=TL4 W=W1 mm L=10 mm

MLIN ID=TL6 W=W1 mm L=10 mm

MLIN ID=TL5 W=W1 mm L=10 mm MBENDA$ ID=TL8 ANG=90 Deg

MBENDA$ ID=TL7 ANG=90 Deg

You will need to input various parameters, including a value of Rho, which is defined in AWR as the conductor resistivity relative to gold. (We will be using copper.) Material Silver Copper Gold Aluminum Resistivity x 10-8 (-m) 1.62 1.72 2.44 2.62

1. Design a Zo = 50- microstrip line (use MLIN element in MWO) on FR-4 substrate at a frequency of 4GHz; total MLIN length = 50 mm. Use MSUB element to input appropriate substrate parameters. Substrate parameters: Dielectric thickness = 1.57 mm Relative dielectric constant = 4.2 Dielectric loss tangent = 0.02 Conductor = copper Conductor thickness = 0.017 mm a. Copy circuit schematic to your Word document. b. Plot |S11| (in dB) and |S21| (in dB) across a frequency range of 1MHz to 20GHz on a rectangular plot. Place markers at 2GHz and 12GHz for S11 and S21. c. What is the attenuation (in dB/cm) of this line at f = 2GHz; at 12GHz? d. What is the worst case return loss (in dB) at f = 2GHz; at 12GHz? (Record values at the average peaks of the response, not in the valleys.) e. What assumptions have you made to perform this analysis? In other words, what parameters are uncertain in your simulation that may have a significant effect on your performance prediction? 2. Repeat exercise #1 with R/T Duroid 5880 substrate: Substrate parameters: Dielectric thickness = 1.57 mm Relative dielectric constant = 2.2 Dielectric loss tangent = 0.0009 Conductor = copper Conductor thickness = 0.017 mm 3. Using Duroid 5880 substrate (from exercise #2) design a microstrip quarter-wave transformer at f = 4GHz which transforms (matches) a 50- source impedance to an ideal 20- load impedance. Include a 10 mm length of 50- microstrip line between port 1 (50- source impedance) and the beginning of your quarter-wave transformer. Terminate your transformer with an ideal (lumped-element) 20- resistor connected to ground.

a. Copy circuit schematic to your Word document. b. Plot |S11| (in dB) across a frequency range of 1MHz to 20GHz on a rectangular plot. c. On a new graph, plot input VSWR across a frequency range of 1MHz to 20GHz on a rectangular plot. d. If the useable bandwidth is considered to be where the input SWR is better than 1.5:1, what is the absolute bandwidth and the percentage bandwidth of your transformer circuit with fo = 4GHz? e. Note that the VSWR response is cyclical over frequency. At what other integer values of n (as nfo) does the VSWR become a minimum? Explain why this occurs.