You are on page 1of 21

O LNG IN

BI TP
CHNG I: O IN P V DNG IN

1.1

Mt ampe-k dng c cu o t in c in tr c cu o R(m) =99 v dng lm


lch ti a Imax = 0,1mA. in tr shunt Rs = 1. Tnh dng in tng cng i qua
ampe-k trong cc trng hp:
a) kim lch ti a
b) 0,5Dm; (FSD = Imax, full scale deviation)
c) 0,25Dm

Hnh B.1.1
Gii:
a) kim lch ti a Dm:
in p hai u c cu o:
Vm=Im.Rm=0,1mA.99=99mV
IsRs = Vm => Is =

Vm 9,9mV
=
= 9,9mA
Rs
1

Dng tng cng:


I = Is + I = 9,9 + 0,1 = 10mA
b) 0,5Dm:
Im = 0,5 . 1mA = 0,05mA
Vm = Im.Rm = 0,05mA.99 = 4,95mV
Is =

Vm 4.95mV
=
= 4.95mA
Rs
1

I = Is + Im = 4.95mA + 0,05mA=5mA
c)0,25mA:
Im = 0,25.0,1mA = 0,025mA
Vm = ImRm = 0,025mA.99 = 2,475mV

Trang 1

O LNG IN

BI TP

Vm 2,475
=
= 2,475V
Rs
1
1.2 Mt c cu o t in c I= 100A, in tr ni khung quay R= 1K. Tnh in tr
shunt mc vo c cu o tr thnh mt ampe-k tng ng vi hnh 1.1.
a) Dm = 100mA = tm o 1
b) Dm = 1A = tm o 2
Io=

Gii:
a) tm o 100mA
Vm= ImRm = 100.1 = 100mV
It = Is+ Im => Is = It Im = 100mA 100A = 9,9mA
Rs =

Vm 100mV
=
= 1,001
Is
99,9mA

b) tm o 1A:
Vm = ImRm = 100mV
Is= It Im = 1A- 100A= 999,9mA
Rs=

Vm 100mV
=
= 0,10001
Is
999,9mA

1.3 Mt c cu o t in c ba in tr shunt c mc theo kiu shunt ayrton s dng


lm ampe-k. Ba in tr c tr s R1=0,05, R2=0,45, R3=4,5, Rm= 1k, Imax=
50A, c mch o nh hnh sau, tnh cc tr s tm o ca ampe-k

Hnh B.1.3
Gii:

Trang 2

O LNG IN

BI TP

Ti lch 0,5 Dm
Vs= Imax.Rm= 50A.1k = 50mV
Is=

Vs
50
=
= 10mA
R1 + R2 + R3 5

It=Is+Im=50A+10mA = 10,05mA; I=10mA.


Kha in C:
Vs= Im(Rm+R3) = 50A.(1k+4,5) = 50mV
Vs
50 mV
=
= 100 mA
Is= R1 + R 2 0,5 + 4,5

Kha in D:
Vs= Im(Rm +R2 +R3) = 50A(1k + 4,5 +0,45) =50mV
Is =

Vs 50mV
=
= 1A.I = 50A+1A=1,00005A = 1A
R1 0,05

1.4 Mt c cu o t in Imax =100A,in tr dy ni (dy qun) Rm = 1K c s


dng lm vn k DC. Tnh in tr tm o vnk c Vtd= 100V. Tnh in p V
hai u vn k khi kim c lch 0,75Dm; 0,75Dm v 0,25Dm ( lch ti a Dm)

Hnh B.1.4
Gii:
V
Rm
V = IM (Rs + Rm) => Rs =
Im
Khi V= Vtd=100V => IM = Imax =100A
Rs =

100V
-1K =999K
100 A

Trang 3

O LNG IN

BI TP

Ti lch 0,75 Dm
Im = 0,75.100A = 75A
V= Im(Rs+ Rm) 75A(999k +1k)=75V
Ti lch 0,5 Dm
Im = 50 A
V= 50 A(999 k+1k)=50V
Ti lch 0,25 Dm
V= 25A(999 k+1k)=25V
1.5 Mt c cu o t in c Imax=50 A; Rm =1700 c s dng lm vn k DC c
tm o 10V, 50V, 100V. tnh cc in tr tm o theo hnh sau:

Hnh B.1.5
Gii
Theo hnh a:
V
Rm + R1 =
I max
= > R1 =

V
I max

Rm =

10V
1700 = 198,3k
50 A

50V
1700 = 998,3k
50 A
100V
R3 =
1700 = 1,9983M
50 A
R2 =

Theo hnh b:

Trang 4

O LNG IN

R1 =

BI TP

V1
10V
Rm =
1700 = 198,3k
I max
50 A

Rm + R1 + R2 =

V2
Im

V2
50V
R1 Rm =
198,3k 1700 = 800k
Im ax
50A
V
V3
Rm + R1 + R2 + R3 =
= > R3 = 3 R2 R1 Rm
I max
Im
R2 =

100V
800k 198,3k 1700 = 1M
50 A

1.6 Mt vnk c tm o 5V, c mc vo mch, o in p hai u in tr R2


nh hnh sau:
a) Tnh in p VR2 khi cha mc Vnk.
b) Tnh VR2 khi mc vn k, c nhy 20k/V.
c) Tnh VR2 khi mc vn k, c nhy 200k/V

Hnh B.1.6
Gii:
a)
VR 2

VR2 khi cha mc Vnk.


R2
50k
=E
= 12V
= 5V
R1 + R 2
70k + 50k

b)Vi vn k c nhy 20k/V.


Rv=5V.20k/V=100k
Rv//R2=100k//50k=33,3k
=E
VR2=

Rv // R2
33,3k
= 12V
= 3,87V
R1 + Rv // R2
70k + 33,3k
Trang 5

O LNG IN

BI TP

c)Vi vn k c nhy 200k/V


Rv=5V.200k/V=1k
Rv//R2=1M//50k= 47,62k
V R 2 = 12V

47,62k
=4,86V
70k + 47,62k 4,86V

1.7
Mt c cu o t in c Ifs= 100A v in tr73 c cu o Rm
=1k c s dng lm vnk AC c V tm o = 100V. Mch chnh lu c
dng cu s dng diode silicon nh hnh v, diode c VF(nh) =0,7V
a) tnh in tr ni tip Rs
b) Tnh lch ca vnk khi in p a vo vnk l 75V v 50V (tr hiu dngRMS).
c) Tnh nhy ca vn k. Tn hiu o l tn hiu xoay chiu dng sin.

Hnh B.1.7
Gii:
a) Tnh Rs:
y l mch chnh lu ton k nn ta c quan h:
IP(tr nh)= Itb/0,637
Vm (tr nh)=

2V

C cu o c:

Trang 6

O LNG IN
I Fs = I tb = 100A I p =

BI TP
100 A
= 157 A
0,637

tac :
1,414Vtd 2V F
1,414Vtd 2V F
=
Rs =
Rm
Rs + Rm
Ip
(1,414.100V ) (2.0,7V )
=
1k = 890,7 k
157 A
b) KhiV = 75V
1,414V 2VF
(1,414 75V ) (2 0,7V )
I tb = 0,637 I m = 0,637
= 0,637
Rs + R m
890,7 k + 1k
I tb = 75A
KhiV = 50V
(1,414 50V ) (2 0,7V )
I tb = 0,673
= 50 A
890,7 k + 1k
c) I m = 157 A I ( RMS ) = 0,707 IP = 0,707 157 A = 111A
100V
= 900,9k.
111A
900,9k
= 9,009k / V
nhy=
100V
R=

1.8 Mt c cu o t in c Ifs = 50A; Rm = 1700 kt hp vi mch chnh lu bn


k nh hnh sau. Diod silicon D1 c gi tr dng in thun If (nh) ti thiu l 100
A. Khi in p o bng 20% Vtm o , diode c VF = 0,7V, vn k c Vtm o = 50V.
a) Tnh Rs v RSH
b) Tnh nhy ca Vnk trong hai trng hp: c D2 v khng c D2

Hnh B.1.8
Gii:
a)Tnh Rs v RSH
Trang 7

O LNG IN

BI TP

y s dng chnh lu bn k nn ta c:
Ip=Itb/(0,5.0,673): tr nh trong trng hp chnh lu bn k
C cu o c Ifs = Itb = 50 A=> Im= 50 A/(0,5.0,673) = 157 A(tr nh)
Khi V= 20% Vtd, IF(nh) c gi tr 100 A. Vy khi V= Vtd, IF(nh) c
gi tr:
100%
100A = 500 A
20%
I F = I m + I SH I SH = I F I M = 500 A 157 A = 343A
IF =

V p = I m Rm = 157 A 1700 = 266,9mV


RSH =
IF =

Vm
266,9mV
=
= 778
I SH
343A

1,414Vtd Vm V F
RS

1,414Vtd Vm V F 1,414 50V 266,9mV 0,7V


=
= 139,5k
IF
500 A
b)Tnh nhy:
Rs =

C D2 trong bn k dng, dng qua D1 c gi tr nh: IF=500 A


Trong bn k m, dng qua vnk c gi tr nh:
1,414Vtd 1,414.50V
=
= 500 A
Rs
139,5k
I hiudung = 0,707.500 A = 353,5A( RMR)c
I=

50V ( RMR)
= 141,4k
353,5A( RMR)
141,4k
nhay =
= 2,8k / V
50V
Khng c D2:
Trong bn k dng:IF(nh) = 500 A. Trong bn k m: I = 0
Rtng =

Trong chu k ca tn hiu:


Ihiu dng =0,5I F(nh)
Vi I l dng in mch chnh chy qua Rs trong bn k dng.

Trang 8

O LNG IN

1
2T

2
I hiudung
=

BI TP
T 2

( I F sin t ) 2 dt =

I F2 ( inh )
4

I = 0,5.500 A = 250 A
50V
R=
= 200k
250 A
200k
_ nhay :=
= 4k / V
50V
1.9 Mt ampe k s dng c cu o t in c cu chnh lu v bin dng nh hnh
v. Bit rng c cu o c Ifs = 1mA v Rm = 1700. Bit dng c Nth = 500; Ns
= 4. Diode cVF(nh) = 0,7V; Rs=20k. Ampe k lch ti a khi dng s cp Ip
= 250mA. Tnh gi tr RL.

Hnh B.1.9
Gii:
Chnh lu ton k nn ta c:
Im(tr nh) =

Itb
1mA
=
= 1,57 mA
0,637 0,673

in p Em hai u cun th bin dng(tr nh):


Em = (Rm+Rs) + 2VF = 1,57mA(20k + 1700) + 1,4V= 35,5V

Es(tr hiu dng) = (0,707.35,5V) = 25,1V

Dng lm lch ti a c cu o c tr hiu dng I:


I = 11,1Itb = 11,1.1mA=11,1mA
Ta c:
Trang 9

O LNG IN
I thu = I so

BI TP

N so
4
= 250mA
= 2mA
N thu
500

I thu = I q + I L I L = 2mA 11,1mA = 0,89mA; (vi Iq=Iqua c cu o)


Es
25,1V
RL =
=
= 28,2k
E L 0,89mA

CHNG II: O IN TR

2.1 Cho Eb = 1,5; R1= 15k; Rm =1k; R2 = 1k; Imax = 50A. Xc nh tr s c


ca Rx khi Ib = Imax; Im = Imax; Im =3/4 Imax .
Gii:
Ti Im =Imax = 50A; Vm = Imax Rm = 50A 1k = 50mA.
Vm 50mV
=
= 50A . Nh vy dng in: Ib = 100A.
Do : I m =
R2
1k
Eb
Vy R x + R1 #
Nu R x + R1 >> R2 // Rm >> 500 .
Ib
1,5V
= 15k. Rx +15k = 15k; Rx = 0.
#
100 A
Khi Im =1/2 Imax = 25A; Vm = 25mV I2 = 25A.
1,5V
Suy ra Ib = 50A. Vy Rx + R1 #
; Rx # 15k.
50 A
Tng t nh cch tnh trn. Im = 3/4 Imax = 37,5A.
Ib = Im + I2 = 37,5A + 37,5A = 75A.
R x + R1 =

1,5V
= 20k, Rx = 5k.
75A

2.2 Mt ohm-k loi ni tip c mch o (Hinh di y). Ngun Eb = 1,5V,


c cu o c Ifs = 100A. in tr R1 + Rm = 15k.
a)Tnh dng in chy qua c cu o khi Rx = 0.
b)Tnh tr gi Rx cho kim ch thi c lch bng 1/2 FSD, 1/4 FSD, 3/4 FSD
(FSD: lch ti a thang o.)

Trang 10

O LNG IN

BI TP

Hnh B.2.2
Gii:
a. I m =

Eb
1,5V
=
= 100 A (FSD).
R x + R1 + Rm 0 + 15k

b.

lch bng 1/2 FSD:


100 A
= 50 A (v c cu o tuyn tnh.)
Im =
2
E
E
1,5V
R x + R1 + Rm = b R x = b R1 + Rm =
15k = 15k
Im
Im
50A
lch bng 1/4 FSD:
1,5V
100 A
15k = 45k
Im =
= 25A ; R x =
25A
4

lch bng 3/4 FSD:


Im = 0,75 100A = 75A; R x =

1,5V
15k = 5k.
75A

2.3 Mt ohm-k c mch o nh hnh sau. Bit Eb =1,5V, R1 = 15k; Rm =


50; R2 = 50; c cu o c Ifs = 50.
Tnh tr gi Rx khi kim ch th c lch ti a: (FSD); 1/2 FSD v 3/4 FSD.

Trang 11

O LNG IN

BI TP

Hnh B.2.3
Gii:
Khi kim lch ti a (FSD):
Im = 50A; Vm = Im.Rm = 50A50 = 2,5mV.
I2 =

Vm 2,5Vm
=
= 50 A
R2
50

Dng in mch chnh: Ib = I2 + Im = 50A + 50A = 100A.


E
1,5V
R x + R1 = b =
= 15k
I b 100 A
Rx = ( Rx + R1) R1 = 15k - 15k = 0
Kim lch 1/2 FSD:
Im = 25A; Vm = 25A 50 = 1,25mV; I 2 =

1,25mV
= 25A
50

Ib = 25A + 25A = 50A.


1,5V
Rx + R1 =
= 30k ; Rx = 30k - 15k = 15k.
50A
Kim lch 3/4 FSD:
Im = 0,75 50A = 37,5A; Vm = 37,5A50 = 1,875mV.
1,875mV
I 2=
= 37,5A ; Ib = 37,5A + 37,5A = 75A.
50
1,5V
R x + R1 =
= 20k R x = 20k 15k = 5k .
75A

Trang 12

O LNG IN

BI TP

2.4 Mt ohm-k co mch o nhiu hnh bai 3. c ngun Eb giam xung ch cn


1,3V. Tnh tr gi mi ca R2 ?.?li cc gi tr Rx tng ng vi lch ca
kim: 1/2 FSD, 3/4 FSD.
Gii:
Eb
1,3V
=
= 86,67 A
Rx = 0; I b
R x + R1 0 + 15k
Im = 50A (FSD); I2 = Ib Im = 86,67A 50A = 36,67A.
Vm
2,5mV
=
68,18
Vm = ImRm = 50A 50 = 2,5mV; R2 =
I 2 36,67 A
Khi kim lch 1/2 FSD:
Im = 25A; Vm = 25A 50 = 12,5mV
Vm 1,25mV
=
= 18,33A
R2
68,1
Ib=Im + I2 = 25A + 18,3A =43,33A
V
1,3V
R2 + R1 = m =
30k R x = 30k 15k = 15k
I b 43,33A
Khi kim lch 3/4 FSD:
I2 =

Im = 0,75 50A = 37,5A; Vm = 37,5A 50 = 1,875mV.


1,875mV
I2 =
= 27,5A; Ib =37,5A + 27,5A = 65A.
68,18
V
1,3V
R x + R1 = m =
20k R x = 20k 15k = 5k
I b 65A
2.5 Tnh dng in chy qua c cu o v lch ca kim ch th ca ohm-k
c mch d nh hnh v khi ta s dung tm o R1 trong hai trng hp:
a)Rx = 0
b) Rx = 24

Trang 13

O LNG IN

BI TP

Hnh B.2.5
Gii:
Mch tng ng ca ohm- k khi ta s dng tm o R1 trong hai
truwowg\ngf hp Rx = 0 v Rx = 24 nh sau:
1,5V
Rx = 0; I b =
14 + [10 // ( 9,99k + 2,875k + 3,82k ) ]
1,5V
= 62,516mA
14 + (10 // 16,685k )
Dng Im chy qua c cu o:
10
I m = 62,516mA
10 + 16,685k
Ib =

Im = 37,5A = Ifs: Khi kim lch ti a.


Rx = 24:
1,5V
Ib =
= 31,254mA
24 + 14(10 // (16,685k ) )
10
I m = 31,254mA
18,72 A : kim lch 1/2 FSD.
10 + 16,685k
2.6 Tnh dng in chy qua c cu o v lch ca kim ch th ca ohm-k
c mch nh bi 5, khi s dng tm o R100 va R10k trong trng hp Rx
= 0.

Trang 14

O LNG IN

BI TP

Hnh B.2.6
Gii:
Mch tng ng ca Ohm-k khi ta s dng tm o R100 v R = 0.

Ib =

1,5V
1470 + [1k // ( 9k + 2,875k + 3,82k ) ]
1,5V
=
= 622,38A
236k + (1k // 15,695k )

I m = 62238A

1k
= 37,5A = I fs : kim ch th lch ti a.
1k + 6,695k

Mch tng ng ca ohm-k khi ta s dungj tm o R10k v Rx = 0.

Ib =

15V
236k + [10k // ( 2,875k + 3,82k ) ]
=

15V
= 62,5A
236k + [10k // 6,695k]

I m = 62,5A

10k
= 37,5k = I fs : Kim ch th lch ti a.
10k + 6,695k

2.7 Ta o in tr bng cch dng phng php V v A c mc r di.


Ampe-k ch 0,5A,vn k ch 500V.Ampe k c Ra = 10,10k/V. Tnh gi
tr R.
Trang 15

O LNG IN

BI TP

Hnh B.2.7
Gii:
E + EA = 500V; I = 0,5A
Rx + R =

E + E A 500V
=
= 1000
I
0,5 A

R = 1000 - Ra = 1000 - 10 =990.


2.8 Cc ampe-k, vn k v in tr R bi 2.7 c mc r ngn. Hy tnh
ch ca vn k v ampe-k (ngun cung cp vn l 500V).

Hnh B.2.8
Gii:
Ni tr ca vn k :
Rv = 1000V 10k/V =10M
Rv // R = 10M // 990 = 989,9
ch ca vn k : E =

500V ( Rv // R ) 5000V 989,9


=
= 495V
R a + ( Rv + R )
10 + 989,9

ch ca ampe-k: = I + I v =

E
495V
=
= 0,5 A .
Rv // R 989,9

Trang 16

O LNG IN

BI TP

CHNG III:
O IN DUNG, IN CM V H CM
3.1.Cho cu o nh hnh v , bit C1 =0.1F v t s R3/R4 c th chnh c thay
i trong khong : 100/1 v 1/100 . Hy tnh CX m cu c th o c.

Hnh B.3.1
Gii:
Ta c: Cx = C1R3/R4 . Vi : R3/R4 =100/1
=>CX = 0,1F(100/1) =10F
Vi : R3/R4 =1/100 => 0,1F(1/100) =0,001F
Vy cu c tm o : t 0,001F 10F
3.2. Cho cu in dung nh hnh sau, thnh phn mu C1 =0,1F ;R3 =10k. Bit rng
cu cn bng khi ngun cung cp co f = 100Hz; R1 =125 v R4 = 14,7 . Hy tnh gi
tr Rs , CS v h s tn hao D ca t?

Trang 17

O LNG IN

BI TP

Hnh B.3.2
Gii:
Ta c : Cs =C1R3/R4;
CS =

0,1F 10k
= 0.068F ;
14,7 k

RS =

R1 R 4 125 14,7k
=
=183.3
R3
10k

D = CSRS = 2 . 100Hz 0,068F 183,8 = 0,008


3.3. Cho cu in dung nh hnh sau, thnh phn mu C1 =0,1F ;R3 =10k. Bit rng
cu cn bng khi ngun cung cp co f = 100Hz; R1 =125 v R4 = 14,7 . Hy tnh gi
tr Rs , CS v h s tn hao D ca t?

Hnh B.3.3
Trang 18

O LNG IN

BI TP
Gii:

Ta c : Cs =C1R3/R4;
CS =

0,1F 10k
= 0.068F ;
14,7 k

RS =

R1 R 4 125 14,7k
=
=183.3
R3
10k

D = CSRS = 2 . 100Hz 0,068F 183,8 = 0,008


3.4.Cu Maxwell o in cm dng thnh phn mu C3 = 0,1F, ngun cung cp c tn
s f=100Hz. Cu cn bng khi R1 =1,26k; R3= 470 v R4 =500 .Tnh tr gi in
cm LS, in tr RS v h s phm cht Q ca cun dy.

Hnh B.3.4
Gii:
Ta c :LS =C3R1R4 =0,1F 1,26k 500 = 63mH
RS =

Q=

R1 R4 1,26k 500
=
= 1.,34k
R3
470

LS 2 100 Hz 63mH
=
= 0,03
RS
1,34k

3.5. Cu c ngun cung cp f= 100Hz cn bng khi C3 =0,1F, R1 =1,26k , R3 =75 v


R4 =500. Tnh in cm LP ,in tr RP v h s phm cht Q ca cun dy?

Trang 19

O LNG IN

BI TP

Hnh B.3.5
Gii:
L P = C 3 R1 R 4 = 0,1F 1,26k 500 = 63mH
RP=

R1 R 4 1,26k 500
=
= 8,4k
R3
75

Q=

RP
8,4k
=
= 212
L P 2 100 Hz 63mH

3.6. Hy tnh thnh phn tng ng LS,RS ca cun dy c :LP =63Mh ; RP = 8,4k ( f
=100Hz).
Gii:
2
RP X P
RS = 2
;th: RP = 8,4k ; R 2P = 7,056 10 7 ; X P = LP
X P + R P2
=>XP =2 100Hz 63mH =39,6
X 2P =1,57 10 3 ; X P2 + R P2 =7,056 107
RS =

8,4k 1,57 10 3
= 0,187 ;
7,056 10 7

XS =

7,056 10 7 39,6
= 39,6
7,056 10 7

LS =

XS
39,6
=
= 63mH
2 100 Hz
Trang 20

O LNG IN

BI TP

3.7. Hay tinh thanh phn tng ng CP ,RP cua tu in co RS =183,8 va CS =0,068f
(f=100Hz).
Gii:
Ta co: RP =( RS2 +XS2 )/RS ; RS2 = (183,8)2 =33,782 10 3
XS =1/2fCS = 1/(2.100Hz.0,68F) =23,405.103
2

X S =5,478.108
RP =( 33,78.103 +5,478 10 8 ) / 183 = 2,99M
XP =

R S2 + X S2 33,78 10 3 + 5,478 10 8
=
=23,41.103
3
XS
23,405 10

CP = 1/(2.100Hz.23,41k)= 0,068F

Trang 21

You might also like