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SEMICONDUCTOR
APPLICATION NOTE

AN878

VHF MOS POWER APPLICATIONS

Prepared by: Roy Hejhall Sr. Staff Engineer

INTRODUCTION
The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of FETS. References 1 and 2 contain information on this subject. Silicon RF power FETs are generally N-Channel MOS enhancement mode devices. Most are vertical structures, meaning that current flow is primarily vertical through the chip with the bottom forming the drain contact. Vertical construction has the advantage of providing greater current density which translates to more watts per unit area of silicon. The assembly of RF power FET wafers into finished devices is similar to the assembly of bipolar RF power transistors (BPTs). Identical packaging is utilized for both types of devices.

ADVANTAGES OF RF POWER FETS

The advantages of FETs have been described elsewhere, 3,4 and will not be repeated in detail. Some observations on this subject are given below. The inherently higher power gain is illustrated by a comparison of the MRF171 FET and MRF315 BPT. Both are VHF devices rated at 45 watts power output. Typical power gains at similar operating conditions (f = 150 MHz, Pout = 45 W, dc supply voltage = 28 V) are 15.0 dB for the FET and 11 dB for the BPT. Any gain comparison should also include ruggedness data. Ruggedness is defined as the ability of a device to survive operation into mismatched loads. Obviously, UHF and microwave BPTs are available with gains exceeding that of the MRF171 FET at 150 MHz, but the higher frequency BPTs will not survive much abuse at VHF. The superior ruggedness of the FET is even more impressive when it is recognized that no source site ballasting is used. Another gain comparison at VHF is provided by the MRF174 FET and MRF317 BPT. The MRF317 is rated at 100 watts output, and contains an internal input matching network which increases the device gain by typically 5.0 dB. The MRF174 is rated at 125 watts output and has no internal input matching, yet the typical gain of the MRF174 at 125 watts output is 12 dB while the typical gain of the MRF317 is 10 dB at 100 watts output (both devices operating at 150 MHz with a 28 Vdc supply). Impedance differences are found mainly at the device input. FET input impedance at dc approaches infinity, dropping at VHF to a level approximately equal to, but slightly higher than the input impedances of comparable BPTs. This point can be illustrated by considering again the aforementioned 45 watt VHF devices. When operating at 150 MHz with a 28 Vdc supply and 45 watts output, the

large-signal input impedances are 1.89-j4.81 ohms for the MRF171 FET and 1.2 +j1.0 ohms for the MRF315 BPT. These devices illustrate another difference. The largesignal input impedance of FETs at VHF is capacitive. By contrast, most VHF BPTs with power outputs greater than 20 watts have an inductive input impedance at 150 MHz. The input impedance of the MRF315 passes through resonance at about 100 MHz. The low-noise figure of the FETs facilitates the design of low-noise power amplifiers and high dynamic range receiver front ends. Noise figures of less than 3.0 dB at f = 150 MHz, VDS = 28 V, ID = 2.0 A have been measured with the 125 watt MRF174. The MRF134 5.0 W VHF FET has a typical noise figure of 2.0 dB at 150 MHz, 28 V, 100 mA, and values as low as 1.5 dB have been measured. Transmitter noise floor determines the antenna front to back ratio required for duplex systems. A most interesting FET characteristic is the inherent gain control mechanism. The power output of a FET amplifier can be varied from full rated output over a range of greater than 20 dB (with RF input power held constant) by varying the dc gate voltage. Further, the device gate does not draw dc current, so the dc source utilized for gain control does not have to deliver any power to the FET. This capability, which does not exist in the RF power BPT, facilitates the design of systems requiring gain control, either manual or automatic.

AMPLIFIER DESIGN
The design of TMOS FET RF power amplifiers has much in common with the design of BPT amplifiers. The amplifier must include dc circuitry to apply bias voltages and RF matching networks to perform the necessary impedance transformation over the frequency band of interest. Amplifier design consists of the synthesis of circuitry to perform the above tasks. A positive dc supply voltage is required on the drain. To date most RF power FETs have been designed for the standard BPT operating collector voltages, i.e. 12.5 V, 28 V, and 50 V. Some higher voltage FETs are also available. The FETs described are designed for 28 V operation. There is no FET parallel to the popular zero base bias BPT amplifier. The typical FET RF power amplifier requires forward gate bias for optimum power output and gain. That is the bad news; the good news is that the FET gate is a dc open circuit and the bias network may often be just a simple resistive divider. A convenient gate bias source is the drain supply. When utilizing this technique care must be taken in filtering the bias circuitry. An inadequately filtered bias circuit connected to the drain supply can form an output-to-input feedback path for oscillations.

RF Application Motorola, Inc. 1993 Reports

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FET amplifier IDQ (quiescent drain current) is not critical and values in the 10 150 mA range are suggested. IDQ may be varied from less than 100 mA to values approaching Class A operation without large changes in gain and efficiency at full rated power. Linear applications are an exception to this where IDQ should be selected to optimize linearity. The design of RF impedance matching networks for FET amplifiers is similar to the corresponding task for BPT amplifiers. These networks usually take the form of broadband transformers at HF, lumped reactive elements at VHF, and microstrip lines with RF chip capacitors at UHF.5,6 Solid-state power amplifier drain or collector load impedances are set primarily by supply voltage and power level. Therefore, FET and BPT amplifiers with like performance parameters can utilize similar output networks. The inductive input impedance of high power VHF BPTs usually dictates that the input network design include shunt capacitors placed as close to the transistor package as is physically possible. FETs, with their capacitive input impedances at VHF, do not require these critical capacitive circuit elements. Figure 1 shows a 125 watt 150 MHz amplifier which utilizes the MRF174 TMOS FET. Note the following items which have been discussed previously: 1. No shunt capacitors at the gate. 2. Resistive bias network operating from the drain supply voltage. 3. Impedance matching networks similar to those of a comparable BPT amplifier (except for item 1 above). This amplifier operates from a 28 volt dc supply. It has a typical gain of 12 dB, and can survive operation into a 30:1 VSWR load at any phase angle with no damage. The amplifier has an AGC range in excess of 20 dB. This means that with input power held constant at the level that provides 125 watts output, the output power may be reduced to less than 1.0 watt continuously by driving the dc gate voltage negative from its IDQ value. Figure 2 illustrates this performance feature. Note that a negative voltage capability would have to be added to the bias system to take full advantage of this AGC performance. Another useful feature of RF power FETs is that they have less variation of input and output impedances with power level than does a BPT. This characteristic permits the use of small-signal 2 port scattering parameters to develop useful design information for gain, stability, and impedances.7 S-parameters are often found on RF power FET data sheets. While s-parameters will not provide an exact design solution for high power operation, they do produce a useful first approximation. Power FETs with outputs below the 40 watt range often have such high gain at HF and VHF that stability problems may be encountered. This problem can be addressed by the classic methods used to stabilize RF smallsignal amplifiers loading of input or output terminals, feedback, or both. Here is an area where s-parameters are useful in calculating the effects of circuit techniques for achieving stability. References 7 and 8 discuss amplifier stability.
L4 R2 BIAS ADJUST R3 C9 C10 + D1 C11 C12 R1 C13 C14 VDD = 28 V +

RFC1 R4 C3 RF INPUT L1 C1 C2 C4 C5 L2 DUT C6 C7 L3

C8 RF OUTPUT

C1 35 pF Unleco C2, C5 Arco 462, 5 80 pF C3 100 pF Unleco C4 25 pF Unleco C6 40 pF Unleco C7 Arco 461, 2.7 30 pF C8 Arco 463, 9 180 pF C9, C11, C14 0.1 F Erie Redcap C10 50 F, 50 V C12, C13 680 pF Feedthru D 1N5925A Motorola Zener

L1 #16 AWG, 1-1/4 Turns, 0.213 ID _ 0.25 L2 #16 AWG, Hairpin 0.25 0.062

L3 #14 AWG, Hairpin 0 062

L4 10 Turns #16 AWG Enameled Wire on R1 RFC1 18 Turns #16 AWG Enameled Wire, 0.3 ID R1 10 , 2.0 W R2 1.8 k, 1/2 W R3 10 k, 10 Turn Bourns R4 10 k, 1/4 W

0.47 _ 0.2

Figure 1. 125 Watt, 150 MHz TMOS FET Amplifier

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160 140 POWER OUTPUT (WATTS) 120 100 80 60 40 20 0 12 10 8.0 6.0 4.0 2.0 0 2.0 4.0 f = 150 MHz VDS = 28 Vdc IDQ = 100 mAdc Pin = CONSTANT

VGS, GATE-SOURCE VOLTAGE (Vdc)

Figure 2. Gain Control Performance of 125 Watt Amplifier Figure 3 shows a 5.0 watt 150 MHz amplifier utilizing the MRF134 TMOS power FET. The MRF134 is a very high gain FET which is potentially unstable at both VHF and UHF. Note that a 68 ohm input loading resistor has been utilized to enhance stability. This amplifier has a gain of 14 dB and a drain efficiency of 55%. Figure 4 shows a 5.0 watt 400 MHz amplifier with a nominal gain of 10.5 dB.

One involves temperature coefficient. Literature abounds with statements that FETs are totally immune to thermal runaway because of their negative temperature coefficient. Actually, many RF power FETs have a positive temperature coefficient over a portion of their operating range. Increasing drain current usually shifts the coefficient from positive to negative. See Figure 5. DC bias experiments have been conducted with several RF TMOS FETs. While they all had positive temperature coefficients over a portion of their operating ranges, none exhibited a tendency toward thermal runaway at drain currents ranging from less than 100 mA to full Class A bias. Thermal runaway does not appear to be a problem, but the positive temperature coefficients suggest that the designer should not completely ignore the thermal aspects of dc bias design. A second potential problem is the danger of permanent damage to FET gates from static electricity. Fortunately, the larger capacitances of power devices reduce this danger. No special precautions have been taken to protect the FETs described from static damage, and there were no failures known to be caused by static induced voltages. However, it is worthwhile to exercise the usual precautions taken in handling all MOS devices.

SUMMARY
The construction, characteristics, and advantages of RF power FETs have been described with emphasis on the VHF frequency range. Particular attention was given to the excellent gain control characteristics of these devices.
L4

CAUTIONARY NOTES
Some precautions regarding FET RF power amplifiers should be mentioned.
R3* D1 C7 R4 C8 + C9 R2 C5 C6 R1 L2 RF INPUT C1 C2 L1 L3 R5

C10

C11 C12

+ VDD = 28 V

C4 RF OUTPUT

C3

* BIAS ADJUST C1, C4 Arco 406,15 115 pF C2 Arco 403, 3 35 pF C3 Arco 402,1.5 20 pF C5, C6, C7, C8, C12 0.1 F Erie Redcap C9 10 F, 50 V C10, C11 680 pF Feedthru D1 1N5925A Motorola Zener L1 3 Turns, 0.310 ID, #18 AWG Enamel, 0.2 Long L2 3-1/2 Turns, 0.310 ID, #18 AWG Enamel, 0.25 Long L3 20 Turns, #20 AWG Enamel Wound on R5 L4 Ferroxcube VK-200 19/4B R1 68 ,1.0 W Thin Film R2 10 k, 1/4 W R3 10 Turns, 10 k Beckman Instruments 8108 R4 1.8 k,1/2 W R5 1.0 M, 2.0 W Carbon Board G10, 62 mils

Figure 3. 5.0 Watt, 150 MHz TMOS FET Amplifier

RF Application Reports

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R3* D1 C9 L1 R4 C10 C11 + R2 C7 C8 R1 Z4 C1 RF INPUT C4 C2 C3 C5 Z1 Z2 Z3 Z5 C6 RF OUTPUT C12 L2 VDD = 28 V C13 C14

* BIAS ADJUST C1, C6 270 pF, ATC 100 mils C2, C3, C4, C5 0 20 pF Johanson C7, C9, C10, C14 0.1 F Erie Redcap, 50 V C8 0.001 F C11 10 F, 50 V C12, C13 680 pF Feedthru D1 1N5925A Motorola Zener L1 6 Turns, 1 /4 ID, #20 AWG Enamel L2 Ferroxcube VK-200 19/4B R1 68 , 1.0 W Thin Film R2 10 k, 1/4 W R3 10 Turns, 10 k Beckman Instruments 8108 R4 1.8 k, 1/2 W Z1 1.4 x 0.166 Microstrip Z2 1.1 x 0.166 Microstrip Z3 0.95 x 0.166 Microstrip Z4 2.2 x 0.166 Microstrip Z5 0.85 x 0.166 Microstrlp Board Glass Teflon, 62 mils

Figure 4. 5.0 Watt, 400 MHz TMOS FET Amplifier

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

1.2 VDD = 28 V 1.1 ID = 4.0 A 1.0 ID = 3.0 A ID = 2.0 A 0.9 ID = 100 mA 0.8 25 0 25 50 75 100 125 TC, CASE TEMPERATURE (C) 150 175

REFERENCES
1. Field Effect Transistors in Theory and Practice, Motorola Semiconductor Sector Application Note AN-211A. 2. The Radio Amateurs Handbook, 59th Edition, Chapter 4, ARRL, Inc., Newington, CT. 3. H. Granberg, Power MOSFETs versus Bipolar Transistors, R.F. Design Magazine, Nov./Dec., 1981. Also available as Motorola Semiconductor Sector Application Note AN-860. 4. D. DeMaw, Practical Class-A and Class-C PowerFET Applications at HF, paper presented at Midcon Electronic Show & Convention, December, 1982. 5. H. Granberg, Broadband Transformers and Power Combining Techniques for RF, Motorola Semiconductor Sector Application Note AN-749. 6. B. Becciolini, Impedance Matching Networks Applied to RF Power Transistors, Motorola Semiconductor Sector Application Note AN-721. 7. S-Parameters . . . Circuit Analysis and Design, HewlettPackard, Palo Alto, CA, Application Note 95. 8. R. Hejhall, RF Small-Signal Design using Two-Port Parameters, Motorola Semiconductor Sector Application Note AN-215A.

Figure 5. Gate-Source Voltage versus Case Temperature For Constant Values of Drain Current MRF174

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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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