*

La figura al est ms adelante *

Asuma n=1 y VT = 25mV, a menos que se indique lo contrario

Chapter 1 Semiconductor Materials and Diodes

61

*1.36 The reverse-saturation current of a silicon pn junction diode at T = 300 K is I S = 1012 A. Determine the temperature range over which I S varies from 0.5 1012 A to 50 1012 A. *1.37 A silicon pn junction diode has an applied forward-bias voltage of 0.6 V. Determine the ratio of current at 100 C to that at 55 C. Section 1.3 DC Diode Analysis A pn junction diode is in series with a 1 M resistor and a 2.8 V power supply. The reverse-saturation current of the diode is I S = 5 1011 A. (a) Determine the diode current and voltage if the diode is forward biased. (b) Repeat part (a) if the diode is reverse biased. 1.39 Consider the diode circuit shown in Figure P1.39. The diode reversesaturation current is I S = 1012 A. Determine the diode current I D and diode voltage VD . *1.40 The diode in the circuit shown in Figure P1.40 has a reverse-saturation current of I S = 5 1013 A. Determine the diode voltage and current. 1.41 (a) For the circuit shown in Figure P1.41(a), determine I D1 , I D2 , VD1 ,and VD2 for (i) I S 1 = I S 2 = 1013 A and (ii) I S 1 = 5 1014 A, I S 2 = 5 1013 A. (b) Repeat part (a) for the circuit shown in Figure P1.41(b). 1.38

+5 V

20 k ID + VD 5 V

Figure P1.39
R1 = 50 k + VPS = 1.2 V ID R2 = 30 k + VD

Figure P1.40

D1 Ii = 1 mA ID1

+ VD1 ID1 D1 I + D2 VD1 D2

D2 ID2

+ VD2

Ii = 1 mA

+ VD2

VO + VI 1 k

(a) Figure P1.41

(b)

Figure P1.42

in = trun-on straight-line oximation

1.42 (a) The reverse-saturation current of each diode in the circuit shown in Figure P1.42 is I S = 6 1014 A. Determine the input voltage VI required to produce an output voltage of VO = 0.635 V. (b) Repeat part (a) if the 1 k resistor is changed to R = 500 . 1.43 (a) Consider the circuit shown in Figure P1.40. The value of R1 is reduced to R1 = 10 k and the cut-in voltage of the diode is V = 0.7 V. Determine I D and VD . (b) Repeat part (a) if R1 = 50 k . 1.44 Consider the circuit shown in Figure P1.44. Determine the diode current I D and diode voltage VD for (a) V = 0.6 V and (b) V = 0.7 V. 1.45 The diode cut-in voltage is V = 0.7 V for the circuits shown in Figure P1.45. Plot VO and I D versus I I over the range 0 I I 2 mA for the circuit shown in (a) Figure P1.45(a), (b) Figure P1.45(b), and (c) Figure P1.45(c).

+5 V

3 k

ID + VD

2 k

2 k

2 k

Figure P1.44

62

Part 1 Semiconductor Devices and Basic Applications

II

RF 1 k

ID D1

VO

(a)
ID II R1 = 1 k
+ +

VO

VB = 1 V R1
+

(b)

D1 II ID1 D2

RF = 1 k VO ID2

I1 VPS
+

I2

R2

ID

(c) Figure P1.45 Figure P1.46

*1.46 The cut-in voltage of the diode shown in the circuit in Figure P1.46 is V = 0.7 V. The diode is to remain biased on for a power supply voltage in the range 5 V P S 10 V. The minimum diode current is to be I D (min) = 2 mA. The maximum power dissipated in the diode is to be no more than 10 mW. Determine appropriate values of R1 and R2 . 1.47 Find I and VO in each circuit shown in Figure P1.47 if (i) V = 0.7 V and (ii) V = 0.6 V.
+5 V +5 V +2 V +5 V

20 k I VO I

20 k I

5 k I VO VO 20 k

VO 20 k 20 k

5 V

5 V

8 V

(a)
R = 4.7 k + 5V I + VD + V

(b)

(c)

(d)

Figure P1.47

Figure P1.49

*1.48 Repeat Problem 1.47 if the reverse-saturation current for each diode is I S = 5 1014 A. What is the voltage across each diode? 1.49 (a) In the circuit shown in Figure P1.49, nd the diode voltage VD and the supply voltage V such that the current is I D = 0.4 mA. Assume the diode cut-in voltage is V = 0.7 V. (b) Using the results of part (a), determine the power dissipated in the diode.

Chapter 1 Semiconductor Materials and Diodes

63

1.50 Assume each diode in the circuit shown in Figure P1.50 has a cut-in voltage of V = 0.65 V. (a) The input voltage is VI = 5 V. Determine the value of R1 required such that I D1 is one-half the value of I D2 . What are the values of I D1 and I D2 ? (b) If VI = 8 V and R1 = 2 k , determine I D1 and I D2 .
R1 VO + VI ID2 R2 = 1 k ID1

Figure P1.50

Section 1.4 Small-Signal Diode Analysis

V+

1.51 (a) Consider a pn junction diode biased at I D Q = 1 mA. A sinusoidal voltage is superimposed on VD Q such that the peak-to-peak sinusoidal current is 0.05 I D Q . Find the value of the applied peak-to-peak sinusoidal voltage. (b) Repeat part (a) if I D Q = 0.1 mA. 1.52 Determine the small-signal diffusion resistance rd for a diode biased at (a) I D = 26 A, (b) I D = 260 A, and (c) I D = 2.6 mA. *1.53 The diode in the circuit shown in Figure P1.53 is biased with a constant current source I. A sinusoidal signal vs is coupled through R S and C. Assume that C is large so that it acts as a short circuit to the signal. (a) Show that the sinusoidal component of the diode voltage is given by vo = vs VT VT + I R S

I RS C + vs
+

vo

Figure P1.53

(b) If R S = 260 , nd vo /vs , for I = 1 mA, I = 0.1 mA, and I = 0.01 mA. Section 1.5 Other Types of Diodes 1.54 The forward-bias currents in a pn junction diode and a Schottky diode are 0.72 mA. The reverse-saturation currents are I S = 5 1013 A and I S = 5 108 A, respectively. Determine the forward-bias voltage across each diode. 1.55 A pn junction diode and a Schottky diode have equal cross-sectional areas and have forward-bias currents of 0.5 mA. The reverse-saturation current of the Schottky diode is I S = 5 107 A. The difference in forward-bias voltages between the two diodes is 0.30 V. Determine the reverse-saturation current of the pn junction diode. 1.56 The reverse-saturation currents of a Schottky diode and a pn junction diode are I S = 5 108 A and 1012 A, respectively. (a) The diodes are connected in parallel and the parallel combination is driven by a constant current of 0.5 mA. (i) Determine the current in each diode. (ii) Determine the voltage across each diode. (b) Repeat part (a) for the diodes connected in series, with a voltage of 0.90 V connected across the series combination.