Kỹ Thuật điện tử

GIO TRNH
K THUT IN T

1
LI NI U
Gio trnh K thut in t c bin son da theo nhiu ti liu ca nhng tc
gi c xut bn, cp nht thng tin trn mng sau chn lc, tng hp m c bit
l bi ging mn K thut in t v kinh nghim thc t ging dy ca ti.
Mn K thut in t c th gii thiu ngi c thy c hnh nh thu nh
ca lnh vc in t v cn thit cho nhng ai mun tm hiu tng qut v in t. Tuy
nhin do chng trnh hc cc khoa ngoi ngnh in t c nhiu mn tm hiu
in t, mn K thut in t c yu cu ging 15 tit l thuyt v 30 tit thc hnh.
Gio trnh K thut in t nhm lm ti liu dy hc mn k thut in t (l thuyt).
Hc sinh sinh vin cn c chun b trc, t tr li cu hi v bi tp sau mi chng,
chn p n cho cc cu trc nghim, h thng li kin thc hc v kin thc cn tm
hiu thm. Trong gio trnh ti trnh by 6 chng v phn ph lc:
Chng 1: C s in hc.
Chng 2: Linh kin th ng.
Chng 3: Cht bn dn diode.
Chng 4: Transistor mi ni lng cc.
Chng 5: Transistor hiu ng trng.
Chng 6: Linh kin c vng in tr m.
Ph lc: Cu hi trc nghim, phn ny ti son ring cho mi chng kt hp
vi cu hi bi tp sau mi chng gip hc sinh sinh vin t kim tra v cng c kin
thc ca mnh.
Tuy c nhiu c gng nhng v thi gian v trnh ca bn thn c gii hn nn
ti liu kh trnh sai st. Ti mong nhn c s gp chn thnh ca bn c.
Tp.HCM nm 2009
GV bin son

L Th Hng Thm
Chng 1: C s in hc
3
Chng 1
C S IN HC
1.1. Ngun gc ca dng in
1.1.1. Cu to vt cht
Khi nghin cu v th gii xung quanh, cc nh khoa hc cho rng mi vt u c
cu to t cc phn t nh nht khng th chia ct. Theo thuyt nguyn t th nguyn t
l phn t nh nht ca vt cht.
Cui th k 19, nhng cuc tm ti v kho st khoa hc chng t nguyn t khng
phi l phn t nh nht. Bng thc nghim cc nh khoa hc khng nh s tn ti
ca electron trong nguyn t, electron mang in tch m.
Nm 1911, t kt qu th nghim, nh Vt l ngi Anh Rutherford a ra mu
nguyn t Rutherford nhng cn nhng hn ch trong vic din t, gii thch cc qu
trnh thuc lnh vc vi m. Nm 1913, nh Vt l an mch Niel Bohr a ra mu
nguyn t mi trn c s tha nhn nhng thnh cng ca Rutherford v a ra hai tin
:
Tin 1 (tin v cc trng thi dng)
Tin 2 ( tin v tn s bc x)
n nay, mi ngi tha nhn mi nguyn t c cu to gm ht nhn, quanh n
l cc electron chuyn ng trn nhng qu o xc
nh. Cc electron sp xp trn nhng lp v k tip
nhau. K t ht nhn ra, cc lp v c k hiu: K,
L, M, N, O, P, Q; s lng t tng ng l 1, 2, 3,,
7; mi lp c s electron gii hn. Ht nhn mang
in tch dng gm c neutron l ht khng mang
in, proton l ht mang in tch dng.
V d: Cu to ca nguyn t He nh hnh 1.1.
Hnh 1.1. Cu to ca nguyn t He.
Bnh thng, nguyn t trng thi trung ha in, ngha l nguyn t c s lng
proton bng s lng electron.
1.1.2. in tch
in l mt thuc tnh ca ht, lng mang tnh cht in gi l in tch.
n v o in tch c tnh bng Coulomb (C).
in tch nguyn t: e = 1,6.10
-19
C.
+ +
Chng 1: C s in hc
4
T nghin cu thc nghim dn n qui c gi loi in ging nh loi in xut
hin trn thanh thy tinh sau khi c xt vo la l in dng, loi in ging loi in
xut hin trn la l in m. Mi vt cht u c th tr thnh nhim in ngha l c
mang mt in tch.
Mt vt hay mt phn t ca vt cha n
1
e in tch dng, -n
2
e in tch m th in
tch ton phn ca n l: q = (n
1
- n
2
)e. (1.1)
Bnh thng, c n
1
= n
2
nn tng i s nhng in tch trong mt th tch ca vt
bng 0. Khi n
1
n
2
, vt c gi l vt mang in tch.
Ngoi cc ht c bn electron, proton, neutron, ngi ta cn pht hin nhiu ht c
bn khc: positron (e
+
), ht pi (
+
,
0
,
-
).
Tng qut, tng in tch ca mt h c lp khng i.
Ngoi ra, ln ca mt in tch khng thay i trong cc h qui chiu qun tnh
khc nhau. Do , ln ca mt in tch khng ph thuc vo trng thi ng yn hay
ang chuyn ng ca in tch.
Cc ht mang in tng tc nhau: cc ht tri du ht nhau, cc ht cng du y
nhau.
Khi kho st cc lc tng tc gia nhng ht tch in, nm 1785, nh vt l ngi
Php Coulomb pht hin ra nh lut sau v c gi nh lut Coulomb:
Lc tng tc gia hai in tch im q
1
, q
2
trng thi ng yn, cch nhau mt
khong r c:
- Phng l ng thng ni gia hai in tch im.
- ln t l thun vi tch ln cc in tch v t l nghch vi bnh phng
khong cch gia chng v ph thuc vo mi trng.
- Chiu l chiu ca lc y nu hai in tch cng du, lc ht nu hai in tch
tri du.
ln lc tng tc gia hai in tch im q
1
, q
2
trng thi ng yn, cch nhau
mt khong r c xc nh theo nh lut Coulomb:

2
2 1
r
q q
K F (1.2a)
F: lc tng tc (N)
q
1
, q
2
: in tch (C)
r: khong cch gia hai in tch im (m)
Hng s t l K ty thuc h thng n v.
H thng n v SI:

r

0
4
1
K (1.2b)
K = 9.10
9
Nm
2
/C
2
H thng n v CGSE: K = 1
Chng 1: C s in hc
5
Mt nguyn t trung ha in khi s lng proton bng s lng electron. Mt
nguyn t c s lng proton khc s lng electron th tr thnh ion:
- ion dng khi s lng proton ln hn s lng electron.
- ion m khi s lng proton nh hn s lng electron.
V d:
- Mt in t thot li khi nguyn t th in t ny c gi l in t t do,
nguyn t cn li l ion dng.
- Mt nguyn t khi mt in t tr thnh ion dng cn nu nguyn t nhn
thm in t th tr thnh ion m.
1.1.3. in trng
Nng lng phn b lin kt vi in tch cho chng ta mt hnh nh v in trng.
Trong khng gian xut hin mt in tch q th n to ra xung quanh c mt in trng
lan truyn trong khng gian.
Tnh cht c bn ca in trng l khi c mt in tch q
t
t trong in trng th
in tch chu tc dng ca lc in.
in trng l dng vt cht tn ti xung quanh in tch v tc dng ln in tch
khc t trong n.

Hnh 1.2. Biu din chiu ca ng sc.
Chiu ca ng sc l chiu t in tch dng sang in tch m.
Ngi ta biu din in trng bng cc ng sc, mt cc ng sc dng
ch cng in trng.

t
q
F
E (1.3)
+
-
Chng 1: C s in hc
6
E: cng in trng (V/m)
F: lc in trng (N)
q
t
: in tch (C)
V in t mang in tch m nn lc tc ng ln in t ngc chiu vi in
trng hay ni cch khc, mt in t t do s di chuyn ngc chiu vi in trng.
1.1.4. in th - hiu in th
Trong trng th ca mt in tch q, mt in tch im q
t
t cch q mt khong r,
s c th nng:

r
qq
.
4
1
W
t
r 0
p

(1.4)
Do , th nng ca mt in tch im q
t
ti mt im bng cng ca lc tnh in
khi dch chuyn in tch im q
t
t im ra xa v cc.
Th nng ny chnh l th nng tng tc ca hai in tch q v q
t
.
Nu q, q
t
cng du th W
P
> 0.
Nu q, q
t
tri du th W
P
< 0.
Khi r th W
P
0
Ti cng mt im A ca tnh in trng nhng in tch im khc nhau q
t1
, q
t2
,
q
t3
, s c th nng W
P1
, W
P2
, W
P3
, , nhng t s:

r
q
4
1
...
q
W
q
W
q
W
r 0 3 t
3 p
2 t
2 p
1 t
1 p
A

(1.5)
A
c gi l in th ca in trng ti im A.
A
l mt i lng c trng cho
tnh in trng do in tch im q to ra ti im A ang xt.
in th ti mt im c tr s bng cng ca lc in trng tc dng vo n v
in tch dng khi in tch ny di chuyn t im ra xa v cc.

q
A
A

(1.6a)
hay

A
A
S d E (1.6b)
Tng t nh nc ch chy thnh dng gia hai ni c a th khc nhau, bng thc
nghim cc nh vt l chng t rng: cc ht
mang in tch ch chuyn ng c hng to
thnh dng in gia hai im c in th khc
nhau.
mch in hnh 1.3, ti A c in th V
A
,
ti B c in th V
B
. dch chuyn in lng
q t v tr A sang v tr B tc to dng in t
A sang B th ngun in phi to ra mt nng
B A

+ -

Ngun in
Hnh 1.3. Mch in kn.
Chng 1: C s in hc
7
lng l U
AB
> 0. (U
AB
< 0 th dng in c chiu t B v A).
U
AB
= V
A
V
B
= - U
BA
(1.7)
U
AB
, U
BA
gi l hiu in th gia A v B.
Ngoi ra, hiu in th gia A v B c th k hiu l U, U
1
.im ni chung ca
mch in c chn lm im gc (im t, im mass). im ny c in th bng 0.
Khi cho im A ni trc tip xung mass th im A c in th V
A
= 0.
K hiu ni mass, ni t (Ground GND)

Hnh 1.4. K hiu mass, GND.
n v o in th, hiu in th: Volt (V)
1 kV (kilovolt) = 10
3
V = 1000 V
1 mV (milivolt) = 10
-3
V = 0,001 V
1.1.5. Dng in
mch hnh 1.3, nu c chnh lch in th gia A v B th c s dch chuyn ca
cc ht mang in theo mt hng xc nh. Khi hnh thnh dng in chy trong
mch. Ngc li, khng c chnh lch in th gia A v B th khng c s dch chuyn
ca cc ht mang in nn khng c dng trong mch.
Dng in l dng chuyn di c hng ca cc ht mang in.

dt
dq
I (1.8)
I: cng dng in (A)
dq: in lng (C)
dt: khong thi gian ngn (s)
Theo qui c dng in c chiu t dng sang m.
n v o cng dng in: Ampere (A)
1 mA (miliampere) = 10
-3
A
1 A (microampere) = 10
-6
A
1.2. Dng in mt chiu
Khi dng in v in th phn b trong mt h mch khng thay i theo thi gian
th mch c xem nh trng thi tnh hay trng thi DC (Direct Current state).
1.2.1. nh ngha
Dng in mt chiu l dng in c chiu v cng dng in khng i theo
thi gian.
1.2.2. Cng dng in
Cng dng in o bng lng in tch ca cc ht mang in chuyn ng c
hng qua tit din dy dn trong mt n v thi gian.
GND
Chng 1: C s in hc
8

dt
dq
I (1.9)
I: cng dng in (A)
dq: in lng (C)
dt: khong thi gian ngn (s)
Dng in khng i:

t
Q
I (1.10)
Q l tng cc in tch i qua tit din dy dn trong khong thi gian t.
1.2.3. Chiu ca dng in
Dng in trong mch c chiu qui c hng t ni c in th cao sang ni c in
th thp. Chiu ca dng in ngc vi chiu chuyn ng ca in t (ngc vi chiu
dch chuyn ca in tch m). Chiu ca dng in cng chiu dch chuyn ca in
tch dng.
Theo qui c: chiu ca dng in l t dng sang m.
1.2.4. Ngun in mt chiu
Cc loi ngun mt chiu:
- Pin, acquy.
- My pht in mt chiu.
Khi s dng ngun mt chiu, cn bit hai thng s quan trng ca ngun l in p
lm vic v in lng.
in lng Q c n v Ampere gi (Ah). in lng Q ch lng in c np
v cha trong ngun. Thi gian s dng s ty thuc cng dng in tiu th v
c tnh theo cng thc:

I
Q
t (1.11a)
Q: in lng (Ah)
I: cng dng in (A)
t: thi gian (h)
V d:
Ngun in mt chiu c in lng 50 Ah, nu dng in tiu th l I = 1 A th thi
gian s dng ti a l:
1
50
I
Q
t = 50 (h) (1.11b)
Theo l thuyt nu dng tiu th l 10 A th thi gian s dng l 5 h hay nu dng
in tiu th l 50 A th thi gian s dng l 1 h.
Thc t th khi dng in tiu th ln qua ni tr ca ngun s sinh ra nhit ln lm
h ngun trc khi t thi gian s dng theo cng thc trn.
trnh h ngun th phi gii hn dng in tiu th mc:
Chng 1: C s in hc
9
(1.11c)
Q: in lng (Ah)
I: cng dng in (A)
t: thi gian (h)
K hiu:
Ngun c nh:

E: sc in ng.
r: in tr trong (in tr ni).
Ngun iu chnh tr s c:

Hnh 1.5. K hiu ca ngun mt chiu.
- Ngun mt chiu: V, U, V
CC
, V
BB
, E,
- Ngun dng: +V
CC

- Ngun m: - V
CC

- Ngun i xng: V
CC
1.2.5. Cch mc ngun in mt chiu
- Mc ni tip.
- Mc song song.
- Mc hn hp.
V d: Mi ngun c E = 1,5 V, Q = 4,5 Ah, r = 1 .
- Mc ni tip.

Hnh 1.6. on mch c ngun mc ni tip.

Ta c: E
t
= 3 V, Q
t
= 4,5 Ah, r
t
= 2 .
- Mc song song.

Hnh 1.7. on mch c ngun mc song song.
Ta c: E
t
= 1,5 V, Q
t
= 9 Ah, r
t
= 0,5 .
- Mc hn hp.
E , r

V
CC
+
-
V
CC
+
-
E, r
+
-
E, r
+
-
Et
, r
t
+
-
E, r
+
-
E, r
+
-
Et
, r
t
10
Q
I
Chng 1: C s in hc
10

Hnh 1.8. on mch c ngun mc hn hp.
Ta c: E
t
= 3 V, Q
t
= 9 Ah, r
t
= 1 .
1.2.6. Cng cng sut
Dng in chy qua bng n lm bng n chy sng, chy qua bp in, bn i
sinh ra nhit, chy qua ng c lm ng c quay. iu ny c ngha l nng lng in
c th chuyn i thnh cc dng nng lng khc: quang nng, nhit nng, c
nng,.Nh vy dng in thc hin c mt cng:
A = U.I.t = R.I
2
.t (1.12)
A: cng ca dng in c gi l in nng (J) (Joule)
U: in p (V)
I: cng dng in (A)
t: thi gian dng in chy (s)
R: in tr ()
1 J = 1 Ws nhng thc t thng dng Wh hay KWh.
1 KWh = 1000 Wh = 3600000 Ws.
Cng sut ca dng in l cng ca dng in sinh ra trong mt n v thi gian.
K hiu: P, n v: Watt (W).
P = U.I = RI
2
(1.13)
1.3. Dng in xoay chiu
Khi dng in v in th phn b trong mt h mch thay i theo thi gian th
mch c xem nh trng thi ng hay trng thi AC (Alternative Current state).
1.3.1. nh ngha
Dng in xoay chiu hnh sin l dng in c chiu v cng dng in bin i
theo thi gian mt cch tun hon vi qui lut hnh sin.
1.3.2. Cc i lng c trng cho dng in xoay chiu hnh sin
Cc i lng c trng cho dng in xoay chiu hnh sin gm c: gi tr nh (gi
tr cc i), gi tr trung bnh, gi tr hiu dng, gi tr tc thi, chu k, tn s, tn s gc,
gc pha, pha ban u.
Dng in xoay chiu: i = I
0
sint (A) c:
- Gi tr nh (gi tr cc i) l I
0
.
+
-
Et
, r
t
+
-
E, r
+
-
E, r
+
-
E, r
+
-
E, r
Chng 1: C s in hc
11
- Gi tr hiu dng
2
I
I
0
. (1.14a)
- Tn s gc = 2f. (1.14b)
- Tn s l
T
1
f . (1.14c)
- Chu k l
f
1
T . (1.14d)
- Gc pha l 100t rad.
- Pha ban u bng 0.
- Gi tr tc thi ti thi im t l i.
V d:
* Dng in xoay chiu: i = 14,14sin100t (A) c:
- Gi tr nh (gi tr cc i) l 14,41 A.
- Gi tr hiu dng 10 A.
- Tn s gc100 rad/s.
- Tn s l 50 Hz.
- Chu k l 0,02 s.
- Pha ban u bng 0.
in p xoay chiu: u = U
0
sint (V) c:
- Gi tr nh (gi tr cc i) l U
0
.
- Gi tr hiu dng
2
U
U
0
. (1.15a)
- Tn s gc = 2f. (1.15b)
- Tn s l
T
1
f . (1.15c)
- Chu k l
f
1
T . (1.15d)
- Pha ban u bng 0.
- Gi tr tc thi ti thi im t l u.
V d:
* in p xoay chiu: u = 311,1sin100t (V) c:
- Gi tr nh (gi tr cc i) l 311,1 V.
- Gi tr hiu dng 220 V.
- Tn s gc100 rad/s.
- Tn s l 50 Hz.
- Chu k l 0,02 s.
Chng 1: C s in hc
12
- Pha ban u bng 0.
Dng in xoay chiu i = I
0
sint (A) chy qua on mch ch c thun in tr R th
hiu in th gia hai u in tr l:
u = U
0
sint (V) (1.16)
0
sint (A) chy qua on mch ch c t C th hiu in
th gia hai u t l:
u = U
0
sin(t - /2)(V) (1.17)
0
sint (A) chy qua on mch ch c cun cm L th hiu
in th gia hai u cun cm L l:
u = U
0
sin(t + /2) (V) (1.18)
Tm li:
- Hiu in th gia hai u in tr thun R cng pha vi dng in chy qua
in tr R.
- Hiu in th gia hai u t in chm pha hn dng in chy qua t in mt
gc l /2.
- Hiu in th gia hai u cun cm nhanh pha hn dng in chy qua cun
cm mt gc l /2.

Chng 1: C s in hc
13
CU HI V BI TP
1. Nu cu to ca mt nguyn t trng thi bnh thng. Khi mt nguyn t khng
trng thi trung ha in th n tr thnh ion g?
2. in tch l g? Cho bit n v o in tch. Xc nh lc tng tc gia cc in
tch.
3. in trng l g? Xc nh vect cng in trng.
4. in th l g? Phn bit khi nim in th, hiu in th, mass (GND), k hiu
ca n.
5. Dng in l g? Dng in mt chiu l g? Dng in xoay chiu l g? Xc nh
chiu ca dng in trn mch in. Nu cng thc tnh cng dng in.
6. So snh pha ca hiu in th gia hai u ti vi pha ca dng in chy qua ti,
nu ti l:
a. in tr thun.
b. t in.
c. cun cm.
7. Mi ngun c sc in ng E, in lng Q, in tr ni r. Nu cng thc tnh
E
t
, Q
t
, r
t
ca on mch gm hai ngun mc:
a. ni tip.
b. song song.
8. Cho mch nh hnh 1.6. Vi mi ngun c E = 1,5 V, Q = 4,5 Ah, r = 1 .
Xc nh E
t
, Q
t
, r
t
ca on mch.
Xc nh E
t
, Q
t
, r
t
ca on mch.
Xc nh E
t
, Q
t
, r
t
ca on mch.
11. Nu biu thc lin quan gia ba i lng: tn s gc, tn s, chu k.
12. Cho bit gi tr cc i, hiu dng, trung bnh, nh, tn s gc, tn s, chu k dao
ng ca dng in xoay chiu: i = 1,414sin100t (A).
13. Cho bit gi tr cc i, hiu dng, trung bnh, nh, tn s gc, tn s, chu k dao
ng ca in p xoay chiu: : u = 31,11sin100t (V)
14. Ta ni in p xoay chiu 220 V ch gi tr hiu dng hay gi tr cc i ca
in p ny?
15. Ti sao ta phi tnh gi tr trung bnh ng vi mt bn k ca in p xoay chiu?
Nu cng thc tnh gi tr trung bnh ng vi mt bn k ca in p xoay chiu.

Chng 2: Linh kin th ng
14
Chng 2
LINH KIN TH NG
2.1. in tr
2.1.1. Khi nim
in tr (resistor) l mt linh kin c tnh cn tr dng in v lm mt s chc nng
khc ty vo v tr ca in tr trong mch in.
2.1.2. K hiu - n v

Hnh 2.1. K hiu in tr.
n v : Ohm (O)
1 kO = 10
3
O
1 MO = 10
3
kO = 10
6
O
2.1.3. in tr ca dy dn
in tr ca dy dn l i lng c trng cho tnh cn tr dng in ca dy dn.
K hiu: R; n v: O (Ohm)
in dn l i lng c trng cho tnh dn in ca dy n. in dn l nghch
o ca in tr.
K hiu: G ; n v: S (siemens)

R
1
G = (2.1a)
T thc nghim ta rt ra kt lun: mt nhit nht nh, in tr ca mt dy dn
ty thuc vo cht ca dy, t l thun vi chiu di ca dy v t l nghch vi tit din
ca dy.

S
l
R = (2.1b)
R: in tr ca dy dn (O)
l : chiu di ca dy dn (m)
S: tit din ca dy dn (m
2
)
: in tr sut (Om)
in tr sut:
S o in tr ca dy dn lm bng mt cht no v c chiu di 1 m, tit din
thng 1 m
2
c gi l in tr sut ca cht .
R

R
15
Vi nhng cht khc nhau th in tr sut ca n cng khc nhau. in tr sut
bin i theo nhit v s bin i ny c xc nh theo cng thc sau:
=
0
(1+at) (2.1c)
0
: in tr sut o 0
0
C.
a: h s nhit
t: nhit (
0
C)
: in tr sut nhit t.
Bng 2.1 a ra tr s trung bnh ca in tr sut ca mt s cht dn in thng
gp:
Cht (.m) Cht (.m)
Bc 0,016.10
6
Km 0,06.10
6

ng 0,017.10
6
Thp 0,1. 10
6

Nhm 0,026.10
6
Photpho 0,11.10
6

Vonfarm

0,055.10
6
Ch 0,21.10
6

Bng 2.1. in tr sut ca mt s cht dn in thng gp.
2.1.4. nh lut Ohm
a. nh lut Ohm cho on mch thun in tr
Nm 1926, nh vt l ngi c George Simon Ohm thit lp bng thc nghim
nh lut sau: cng dng in trong mt on mch t l thun vi hiu in th
gia hai u on mch v t l nghch vi in tr ca on mch.
R
U
I = (2.2)
I: cng dng in (A)
U: hiu in th gia hai u on mch (V)
R: in tr (O)
b. nh lut Ohm tng qut i vi on mch

Hnh 2.2. on mch AB.
Dng in chy trong on mch c tnh bi cng thc:
A B
V
1
,r
1
V
2
,r
2

R
16

t
R
V
I
B A
+
=

(2.3)
A
: in th ti A.
B
: in th ti B.
R
t
: in tr ca on mch AB.
R
t
= R + r
1
+ r
2

Qui c ngun in ty theo chiu dng in:

Ngun pht (cp in), qui c V > 0
Ngun thu (tiu th in), qui c V < 0

c. nh lut Ohm tng qut cho mch kn
Dng in chy trong mt mch kn c tnh bi cng thc:

t
R
V
I

= (2.4a)
I: cng dng in chy trong mch kn.
V: tng in th c trong mch kn.
R
t
: in tr ca ton mch.
Thc ra, vi on mch AB (hnh 2.2) nu hai u A, B ca on mch trng nhau, ta
c mt mch kn. Khi
A
=
B
v cng thc tnh dng in tr thnh:

2 1
2 1
t
r r R
V V
R
V
I
+ +
+
= =
(2.4b)
V d khc:
Ta c:

2 1
2 1
t
R R
V V
R
V
I
+
+
= =
(2.4c)

Hnh 2.3. Mch in kn.
2.1.5. nh lut Kirchhoff
Thc t, ta thng gp cc mng in phn nhnh phc tp gm nhiu nt v vng
mng.
Mt nt in l ch ni cc nhnh in v phi c t nht ba nhnh in tr ln.
Vng mng l vng kn do cc on mch to thnh.
a. nh lut Kirchhoff th nht (nh lut nt)
V
1

R
1

R
2

V
2

I
17
Tng i s cc cng dng in ti mt nt bng khng.
0 ) I (
n
1 k
k
=
=
(2.5a)
Ti nt c n nhnh in. Qui c: cng dng in ti nt mng du +, cng
dng in i khi nt mng du -.
Hay ni cch khc: Tng cc cng dng in ti nt bng tng cc cng
dng in i khi nt .
I
vo
= I
ra
(2.5b)

V d:
Ti nt A ta c:
I
1
- I
2
- I
3
+ I
4
+ I
5
= 0 (2.5c)
Hay I
1
+ I
4
+ I
5
= I
2
+ I
3
(2.5d)

Hnh 2.4. Nt A c 5 nhnh in.
b. nh lut Kirchhoff th hai (nh lut vng mng)
Trong mt vng mng, tng ca tng i s cc sc in ng v tng i s cc
gim in th trn cc phn t khc bng khng.
0 )R I ( ) V (
n
1 k
n
1 k
k k
k
,
,
, ,
= +

= =
(2.6a)
Qui c:
Sc in ng mang du + nu chiu i chn trn vng mng xuyn vo cc
dng ca ngun in. Sc in ng mang du - nu chiu i chn trn vng mng
xuyn vo cc m ca ngun in.
Cng dng in mang du + nu n cng chiu vi chiu chn v mang du -
nu n ngc chiu vi chiu chn.
V d: Xt mch nh hnh 2.5 ta c:
Vng I:
- V
1
+ I
1
(r
1
+ R
1
) I
2
(r
2
+ R
2
) + V
2
= 0 (2.6b)
Vng II:
- V
2
+ I
2
(r
2
+ R
2
) I
3
(r
3
+ R
3
) + V
3
= 0 (2.6c)

2.1.6. Phn loi
in tr c th phn loi da vo cu to hay da vo mc ch s dng m n c
nhiu loi khc nhau.
2.1.6.1. Phn loi theo cu to
I
2

I
1

I
3

I
4
I
5
A
V
1
,r
1

I
I
1

R
1

R
2

R
3

II
V
2
,r
2

V
3
,r
3

I
2

I
3

Hnh 2.5. Mch in gm hai vng
mng.

18
a. in tr than (carbon resistor)
Ngi ta trn bt than v bt t st theo mt t l nht nh cho ra nhng tr s
khc nhau. Sau , ngi ta p li v cho vo mt ng bng Bakelite. Kim loi p st
hai u v hai dy ra c hn vo kim loi, bc kim loi bn ngoi gi cu trc bn
trong ng thi chng c xt v m. Ngoi cng ngi ta sn cc vng mu cho bit
tr s in tr. Loi in tr ny d ch to, tin cy kh tt nn n r tin v rt thng
dng. in tr than c tr s t vi n vi chc M. Cng sut danh nh t 0,125 W
n vi W.
b. in tr mng kim loi (metal film resistor)
Loi in tr ny c ch to theo qui trnh kt lng mng Ni Cr trn thn gm c
x rnh xon, sau ph bi mt lp sn. in tr mng kim loi c tr s in tr n
nh, khong in tr t 10 n 5 M. Loi ny thng dng trong cc mch dao
ng v n c chnh xc v tui th cao, t ph thuc vo nhit . Tuy nhin, trong
mt s ng dng khng th x l cng sut ln v n c cng sut danh nh t 0,05 W
n 0,5 W. Ngi ta ch to loi in tr c khong cng sut danh nh ln t 7 W n
1000 W vi khong in tr t 20 n 2 M. Nhm ny cn c tn khc l in tr
cng sut.
c. in tr oxit kim loi (metal oxide resistor)
in tr ny ch to theo qui trnh kt lng lp oxit thic trn thanh SiO
2
. Loi ny c
n nh nhit cao, chng m tt, cng sut danh nh t 0,25 W n 2 W.
d. in tr dy qun (wire wound resistor)
Lm bng hp kim Ni Cr qun trn mt li cch in snh, s. Bn ngoi c ph
bi lp nha cng v mt lp sn cch in. gim ti thiu h s t cm L ca dy
qun, ngi ta qun s vng theo chiu thun v s vng theo chiu nghch.
in tr chnh xc dng dy qun c tr s t 0,1 n 1,2 M, cng sut danh nh
thp t 0,125 W n 0,75 W.
in tr dy qun c cng sut danh nh cao cn c gi in tr cng sut. Loi
ny gm hai dng:
- ng c tr s 0,1 n 180 k, cng sut danh nh t 1 W n 210 W.
- khung c tr s 1 n 38 k, cng sut danh nh t 5 W n 30 W.
2.1.6.2. V mc ch s dng
a. in tr c nh
in tr c nh l loi in tr c tr s c nh khng thay i c. Tr s ny
c nh sn xut n nh c sai s trong phm vi cho php.
Nhm in tr c nh chia ra cc loi:
19
in tr chnh xc: c th l dng mng kim loi hoc dy qun, c thit k
dng trong cc mch i hi sai s trong phm vi hp, n nh ln, ting n thp v
h s nhit thp. Loi dy qun tng i ln v ch c mt khong in tr t 0,1
n 1,2 M nhng n c n nh cao nht. Cc hiu ng ca in cm L v in
dung C ca in tr dy qun khin n khng thch hp dng tn s ln hn 50 kHz
ngay c khi qun c bit gim in cm v in dung lin kt. in tr mng kim
loi khng bn nh in tr dy qun song c in cm nh hn. in tr mng kim loi
thng c v hoc hn kn hoc c nha phenol. N c khong in tr t 10 n
5M.
in tr bn chnh xc: c thit k cho cc mch i hi n nh nhit
lu di. in tr thng nh hn in tr chnh xc v r hn, ch yu lm chc nng
hn dng v gim p trong cc mch.

Loi in tr Khong in tr Khong cng sut danh nh
Oxit kim loi
Kim loi gm
Than kt ta
10 n 1,5 M
10 n 1,5 M.
10 n 5 M.
0,25 W n 2 W
0,05 W n 0,5 W
0,125 W n 1 W
in tr a dng: loi ny nh, r tin, thng hay dng trong mch in t m
dung sai ban u l khng quan trng (v d: 5% hoc ln hn), n nh di hn l
khng quan trng. Khng c dng nhng in tr ni cn h s nhit ca in
tr thp v mc n thp. Khong in tr t 2,7 n 100 M. Tr s in tr trn
0,3M bt u b gim tn s xp x 100 kHz, trn tn s 1 MHz tt c cc tr s u
b gim. Khong cng sut danh nh t 0,125 W n 2 W.
in tr cng sut: c dng dy qun hoc dng mng, l loi c khong cng
sut danh nh cao, c dng trong cc b ngun cng sut, cc b chia p...
b. in tr c tr s thay i c:
Bin tr (VR = Variable Resistor): l loi in tr c tr s thay i c
Bin tr dy qun: dng dy dn c in tr sut cao, ng knh nh, qun trn li
cch in bng s hay nha tng hp hnh vng cung 270
0
. Hai u hn hai cc dn in
A, B. Tt c c t trong mt v bc kim loi c np y. Trc trn vng cung c
qun dy l mt con chy c trc iu khin a ra ngoi np hp. Con chy c hn
vi cc dn in C.
Bin tr dy qun thng c tr s nh t vi n vi chc . Cng sut kh ln,
c th ti vi chc W.
Bin tr than: ngi ta trng mt lp than mng ln hnh vng cung bng bakelit. Hai
u lp than ni vi cc dn in A v B. gia l cc C ca bin tr v chnh l con
20
chy bng kim loi tip xc vi lp than. Trc xoay c gn lin vi con chy, khi xoay
trc (chnh bin tr) con chy di ng trn lp than lm cho tr s bin tr thay i. Bin
tr than cn chia lm hai loi: bin tr tuyn tnh, bin tr phi tuyn.
Bin tr than c tr s t vi trm n vi M nhng c cng sut nh.

Hnh 2.6. Hnh dng v k hiu ca bin tr.
Nhit in tr l loi in tr m tr s ca n thay i theo nhit (thermistor).
Nhit tr dng ( PTC = Positive Temperature Coefficient) l loi nhit tr c h s
nhit dng.
Nhit tr m ( NTC = Negative Temperature Coefficient) l loi nhit tr c h s
nhit m.
VDR (Voltage Dependent Resistor) l loi in tr m tr s ca n ph thuc in
p t vo n. Thng th VDR c tr s in tr gim khi in p tng.
in tr quang (photoresistor) l mt linh kin bn dn th ng khng c mi
ni P N. Vt liu dng ch to in tr quang l CdS (Cadmium Sulfid), CdSe
(Cadmium Selenid), ZnS (st Sulfid) hoc cc tinh th hn hp khc.

Hnh 2.7. Cu to ca in tr quang.
in tr quang cn gi l in tr ty thuc nh sng (LDR Light Dependent
Resistor) c tr s in tr thay i ty thuc cng nh sng chiu vo n.

Hnh 2.8. Hnh dng v k hiu ca in tr quang.
K hiu v hnh dng ca in tr quang nh hnh 2.8.
CdS
nh sng
LDR CdS
21
Khi b che ti th in tr quang c tr s rt ln, khi c chiu sng th dn in
ca cht bn dn tng do cc cp in t t do v l trng hnh thnh nhiu tc l in
tr gim nh. in tr quang c tr s in tr thay i khng tuyn tnh theo sng
chiu vo n. Khi trong bng ti in tr quang c tr s khong vi megaohm, tr s ca
in tr quang trong bng ti vi nhiu trng hp ng dng cn phi bit. N cho ta
dng in r ln nht vi mt in th trn in tr quang. Dng r qu ln s dn n
s sai lch khi thit k mch in. Khi c chiu sng in tr quang c tr s rt nh
khong vi chc n vi trm Ohm.
H s nhit ca in tr quang t l nghch vi cng chiu sng. Do gim
bt s thay i ca in tr quang theo nhit , in tr quang cn c cho hot ng
vi mc chiu sng ti a. mc chiu sng thp v tr s in tr quang cao cho ta s
sai bit kh ln so vi tr s chun.
in tr quang c ng dng lm b phn cm bin quang trong cc mch t ng
iu khin bi nh sng; mch o nh sng; mch chnh hi t ca mt s thit b; mch
tr chi in t,
c. Mt s in tr khc:
in tr cu ch.
in tr xi mng.
in tr chip.
in tr dn

Hnh 2.9. Hnh dng ca mt s loi in tr.
2.1.7. Cch mc in tr
a. Mc ni tip

Hnh 2.10. Mch in tr mc ni tip.
Xt mch nh hnh 2.10, vi:
I
1
: cng dng in chy qua R
1
I
2
2
U
1
: hiu in th gia hai u R
1
U
2
2

R
2

I
+
U
I
2

<=>
I
1

R
1
R
t

+
U
22
Ta c: I
1
= I
2
= I (2.7)
U = U
1
+ U
2
(2.8)
R
t
= R
1
+ R
2
(2.9a)
Nu c nhiu in tr mc ni tip th
R
t
= R
1
+ R
2
+ + R
n
(2.9b)

b. Mc song song

Hnh 2.11. Mch in tr mc song song.
Xt mch nh hnh 2.11, vi:
I
1
1
I
2
2
U
1
1
U
2
2

Ta c: U
1
= U
2
= U (2.10)
I = I
1
+ I
2
(2.11)

2 1 t
R
1
R
1
R
1
+ = hay
2 1
2 1
t
R R
R R
R
1
+
= (2.12a)
Nu c nhiu in tr mc song song vi nhau th:
n 2 1 t
R
1
...
R
1
R
1
R
1
+ + + = (2.12b)
2.1.8. Cch c tr s in tr
a. c tr s in tr theo qui c vng mu:
in tr 4 vng mu
- Vng A, B ch tr s tng ng vi mu.
- Vng C ch h s nhn.
- Vng D ch sai s.

Hnh 2.12. in tr 4 vng mu.
A B C D
R
1
R
2
R
t
I
1
R
1
I
2
I

I

23
V d:
tm bc = 2,7 kO 10%
tm vng nh = 2,7 kO 5%
vng nh = 2,2 kO 5%
Nu lc vng nh = 1,5 kO 5%
Cam cam vng nh vng nh = 3,3 O 5%

Mu Vng A, B Vng C Vng D
en
Nu

Cam
Vng
Lc
Lam
Tm
Xm
Trng
Vng nh
Bc
Mu thn
in tr
0
1
2
3
4
5
6
7
8
9
-------------
-------------
-------------
x10
0
= x1
x10
1
= x10
x10
2
= x100
x10
3
= x1000
x10
4
= x10000
x10
5
= x100000
x10
6
= x1000000
x10
7
= x10000000
x10
8
= x100000000
x10
9
= x1000000000
x10
-1
= x0,1
x10
-2
= x0,01
------------------------
----------
1%
2%
3%
-------------
-------------
-------------
-------------
-------------
-------------
5%
10%
20%

Bng 2.2. Bng qui c mu in tr.
in tr 3 vng mu:
Ln lt c k hiu A, B, C. ngha ca cc vng mu tng t loi in tr 4
vng mu: vng A, B ch tr s tng ng vi mu. Vng C ch h s nhn. Sai s xem
nh mu ca thn in tr.
V d:
tm = 2,7 kO 20%
in tr 5 vng mu:
Loi in tr 5 vng mu c k hiu l vng A, B, C, D, E: 3 vng A, B, C ch tr
s tng ng vi mu, vng D ch h s nhn, vng E ch sai s.
V d:
Nu en en en nu = 100 O 1%
b. c tr s in tr theo qui c chm mu
24
Trn thn in tr, mt u in tr c mu B khc vi mu ca thn in tr (A),
gia thn c chm mu (C). ngha cc mu v cch c tr s in tr nh trn.
V d:
Mt in tr c thn mu xanh l cy, mt u mu , gia thn c chm vng, tr
s ca n l 520 kO.
c. in tr c ghi s trn thn
i vi in tr c ghi s trn thn th hai s u l s c ngha, s th ba ch s
nhn.
V d:
Trn thn in tr c ghi 103 th tr s in tr l 10 kO.
Ngoi ra trn thn in tr c ghi con s v ch th con s ch tr s in tr, ch ch
bi s: R = x1; K = x10
3
; M = x10
6
.
V d: 5R = 5 O.
4K7 = 4,7 kO.
V l thuyt, linh kin in tr c th c gi tr bt k t thp nht n cao nht.
Trong thc t, cc linh kin in tr c khong in tr t 0,1 O n 100 MO.
Cc gi tr tiu chun: 1.0; 1.2; 1.5; 1.8; 2.2; 2.7; 3.3; 3.9; 4.3; 4.7; 5.1; 5.6; 6.8; 7.5;
8.2; 9.1. Cc linh kin in tr thng c ch to vi gi tr l cc gi tr tiu chun
nhn vi bi s ca 10.
V d: in tr: 10 O; 100 O; 1,5 kO; 2,7 kO; 5,6 kO.
2.1.9. Cng sut ca in tr
Cng sut ca in tr l tr s ch cng sut tiu tn ti a ca n. Cng sut chu
ng ny do nh sn xut cho bit di dng ghi sn trn thn hoc kch thc ca in
tr. Kch thc in tr ln th cng sut ca n ln. Cng sut ca in tr thay i
theo kch thc vi tr s gn ng nh bng 2.3.

Bng 2.3. Cng sut ca in tr thay i theo kch thc.
Nn chn cng sut chu ng ln hn hay bng 2 ln cng sut tnh ton.
Cng sut Chiu di ng knh
2 W 1,6 cm 10 mm
1 W 1,2 cm 6 mm
0,5 W 1 cm 4 mm
0.25 W 0,7 cm 3 mm
25
2.1.10. ng dng
in tr c nhiu ng dng trong lnh vc in v in t:
- Ta nhit: bp in, bn i.
- Thp sng: bng n dy tc.
- B cm bin nhit, cm bin quang.
- Hn dng, chia dng.
- Gim p, chia p,.

I
R R
R
I
2 1
2
1
+
= (2.13a)
I
R R
R
I
2 1
1
2
+
= (2.13b)

CC
2 1
1
1
V
R R
R
V
+
= (2.14)

Mch chia dng nh hnh 2.14 cn c gi l mch phn dng. Mch chia p nh
hnh 2.15 cn c gi l mch phn p hay cu phn p (mch chia th / mch phn th
/ cu phn th).

Hnh 2.14. Mch chia dng.
Hnh 2.15. Mch chia p.
+V
CC
R
1
R
2
V
1
Hnh 2.13. Mch dng R hn dng, gim p.
R

9V/3W
V
CC
12V
26
2.2. T in
2.2.1. Khi nim
T in (capacitor) l linh kin c tnh tch tr nng lng in di dng in trng.
2.2.2. Cu to k hiu
T in c cu to gm hai bn cc bng
cht dn in (kim loi) t song song gn nhau
nhng cch in bi lp in mi gia.
K hiu ca t in:

Hnh 2.17. K hiu ca t khng phn cc (a), t c phn cc (b), t bin i (c).
2.2.3. S dn in ca t
Xt mch nh hnh 2.14.
Khi kha K h th n tt.
ng kha K, ta thy n le
sng ln ri tt. Nu i ngun
V
DC
bng ngun V
AC
th khi K
h n tt, K ng ta thy
n sng lin tc.
2.2.4. in dung
in dung (capacitance) l i lng c trng kh nng tch in ca t.
K hiu: C, n v: Farad (F)
Thng dng cc c s ca Farad:
Microfarad: 1 F = 10
-6
F
Nanofarad: 1 nF = 10
-9
F
Picofarad: 1 pF = 10
-12
F
Femptofarad: 1 fF = 10
-15
F
in dung ph thuc cht in mi, t l thun vi tit din ca bn t v t l nghch
vi khong cch gia hai bn t (b dy ca lp in mi).

d
S
C = (2.15a)
(a) (b) (c)
Cht in mi
Bn cc
Dy ni ra
Hnh 2.16. Cu to ca t in.

+ +
+ +
+ +
-- -
- - -
- -

K
V
DC

Hnh 2.18. Mch th nghim s dn in ca t.

27
Vi:
C: in dung (F)
S: tit din ca bn t (m
2
)
d: khong cch gia hai bn t (m)
=
r
.
0
(2.15b)

r
: hng s in mi tng i.

0
: hng s in mi khng kh;
0
= 8,85.10
-12
F/m.
Mt s cht in mi thng dng lm t: Khng kh kh, giy tm du, gm, oxit
nhm, mica.
Cht in mi Hng s in mi
r

Khng kh kh
Giy
Gm
Mica
1
3,6
5,5
4 5

Bng 2.4. Hng s in mi ca mt s cht.
in dung c th o bng t s in tch ca t trn hiu in th gia hai bn t in.

U
Q
C = (2.16)
C: in dung ca t (F)
Q: in tch (C)
U: hiu in th gia 2 bn t (V)
Nng lng tch tr t in l:
2
CU
2
1
W = (2.17)
W: nng lng (J)
C: in dung (F)
U: hiu in th gia 2 bn t (V)
2.2.5. in th lm vic
i vi mi t in, ch c th t vo n mt in p ln nht no , ty theo kt
cu ca lp in mi. Nu in p t vo qu ln in mi s b nh thng v tr nn
dn in, lm t in b hng khng dng c na.
in th lm vic (Working Volt = WV) chnh l in th ln nht cho php p vo
hai u t m t chu ng c. Thng in th ny c ghi trn t.
2.2.6. Mch tng ng ca t in
28
Ngoi in dung, mt t in thc t cn c in tr v in cm nh trong mch
tng ng hnh 2.15.

Hnh 2.19. Mch tng ng ca t in.
Vi R
S
l in tr ni tip do cc dy dn, cc u tip xc v cc in cc.
R
P
: in tr sun do in tr sut ca cht in mi v vt liu lm v, do hao in
mi.
L: h s t cm (in cm) tp do dy dn v cc in cc.
in tr tng ng ni tip ESR (Equivalent Series Resistance) l in tr AC ca
t in phn nh c in tr ni tip R
S
v in tr song song R
P
ti tn s cho
hao ca cc phn t ny c th biu th bng hao ca mt in tr R trong mch tng
ng.
Dung khng: l i lng c trng cho sc cn in ca t.
K hiu: X
C
hoc Z
C
, n v: Ohm (O).
Biu thc:
fC 2
1
C
1
X
C
t
= = (2.18)
X
C
: dung khng (O)
: tn s gc (rad/s)
C: in dung (F)
f: tn s (Hz)
Tng tr ( tr khng): khi lm vic tn s cao th phi tnh thm in cm u ra:
( )
2
C L
2
X X R Z + + = (2.19a)
Z: tng tr (O)
R: ESR(O)
X
C
: dung khng (O)
X
L
: cm khng (O), X
L
= L = 2fL (2.19b)
L: h s t cm (H)
H s cng sut PF (Power Factor). Thut ng PF ch hao in trong t khi lm
vic vi in p AC. t in l tng, dng s sm pha hn in p gia hai u t l
90
0
. T thc t, do tn hao cht in mi, in cc v cc u tip xc nn gc pha nh
hn 90
0
. PF c nh ngha l t s in tr tng ng ni tip R v tng tr Z. PF c
n v: %.
R L
C
R
P
R
S
L
C
29
H s tiu tn DF (Dissipation Factor) l t s in tr tng ng ni tip R v
dung khng X
C
. DF c n v: %. DF xp x bng PF khi PF 10%.
H s phm cht Q (Quality Factor) l nghch o ca h s tiu tn. N thng p
dng cho t trong cc mch iu hng.
Dng in r (r) DC l dng chy qua t khi c t in p DC vo t.
in tr cch in: l t s ca in p t vo t trn dng in r (r) v thng
biu th bng MO.
2.2.7. Cch mc t in
a. Mc ni tip

Hnh 2.20. Mch t in mc ni tip.
in tch np vo t c tnh theo cng thc:
2 1
Q Q Q = = (2.20)
2
2
1
1 2 2 1 1
C
Q
U ;
C
Q
U U C U C Q = = = =
Mt khc:
t
t
C
Q
U .U C Q = =
m :
2 1
U U U + = (2.21)
2 1 t
C
1
C
1
C
1
= = (2.22a)
Nu c nhiu t ghp ni tip th:

(2.22b)

b. Mc song song

n 2 1 t
C
1
...
C
1
C
1
C
1
+ + + =

+
U
+
U
C
2

+
C
1

+
C
t

+
<=>
+
U
C
1

+
+
U
C
2

+
C
t

+
<=>
30
Hnh 2.21. Mch t in mc song song.
Hiu in th gia hai u t C
1
, C
2
: U = U
1
= U
2
(2.23)
in tch np vo t C
1
: Q
1
= C
1
U
in tch np vo t C
2
: Q
2
= C
2
.U
in tch np vo t C
t
: Q = C
t
.U
in tch np vo t C
1
, C
2
bng in tch np vo t C
t
nn:
Q = Q
1
+ Q
2
(2.24)
C
t
.U = C
1
U + C
2
U = (C
1
+ C
2
) U
C
t
= C
1
+ C
2
(2.25a)
Nu c nhiu t mc song song th:

(2.25b)

2.2.8. Hin tng np x ca t
Xt mch nh hnh 2.18,
gi s t cha tch in, ta
bt kha K sang v tr s 1
th t bt u np in, lng
in tch c tch trn hai
bn t tng dn n khi hiu
in th gia hai u t gn
bng ngun V
DC
(99%V
DC
)
th qu trnh np in ca t c chm dt, t c xem nh np y, nu khng c
tc ng khc th hin tng vn khng i.
Khi cha tch in th hiu in th gia hai u t bng khng. Trong qu trnh np
in th hiu in th gia hai u t thay
i theo dng hm s m:
) e (1 V (t) v

t
DC C

= (2.26a)
e = 2,71828
i = R.C (2.26b)
R: in tr (O)
C: in dung (F)
i: thi hng np x ca t (s)
t: thi gian t np in (s)
Trong qu trnh np in, t c dng
in np thay i theo dng hm s m:
C
t
= C
1
+ C
2
+ C
n

+ +
C
K
2
1
R
V
DC

Hnh 2.22. Mch kho st hin tng np - x ca t.

0 t 2t 3t 4t 5t

t
V
C
(t)/ I
C
(t)
63
86
95
98 99
37
14
5
2
1
Hnh 2.23. c tuyn np ca t.
31
t
DC
C
e
R
V
(t) i

= (2.27)
Theo l thuyt, thi gian t np y l v hn (v
c
(t) = V
DC
). Trn thc t, sau thi
gian 5i t np c 99%V
DC
, lc ngi ta xem nh t np y.
Khi t np y, ta bt K qua v tr s 2, t C x in qua R, hiu in th gia hai
u t thay i theo biu thc:

t
DC C
e V (t) v

= (2.28a)
e = 2,71828
i = R.C (2.28b)
R: in tr (O)
C: in dung (F)
i: thi hng np x ca t (s)
t: thi gian t x (s)
Dng x ca t thay i theo biu thc:

t
DC
C
e
R
V
(t) i

= (2.29)
tc np x nhanh trong thi gian lc u t 0 n i, sau chm li trong
thi gian sau.
2.2.9. Phn loi
a. Da theo mc ch s dng
T c nh: l t c tr s in dung c nh. Tr s ny c nh sn xut n nh
c sai s trong phm vi cho php. N c chia lm hai dng:
- T c cc (polar): t c phn cc tnh dng v m.
- T khng phn cc (nonpolar): t c hai cc nh nhau.
T bin i: l loi t c tr s in dung c iu chnh thay i theo yu cu s
dng.

Hnh 2.24. Hnh dng t bin i.
b. Da theo cht in mi
32
- T ha: l loi t c phn cc tnh. T ha c bn cc l nhng l nhm, in mi
l lp oxit nhm rt mng c to bng phng php in phn. in dung ca t ha
kh ln.
Khi dng phi rp ng cc tnh dng v m. in th lm vic thng nh hn
500V.
- T ha tantalum (Ta): l t c phn cc tnh, c cu to tng t t ha nhng dng
tantalum thay v dng nhm. T Tantalum c kch thc nh nhng in dung ln. in
th lm vic ch vi chc volt.
- T giy: l loi t khng phn cc tnh. T giy c hai bn cc l nhng l nhm
hoc thic, gia c lp cch in l giy tm du v cun li thnh ng.
- T mng: l t khng phn cc tnh.T mng c cht in mi l mng cht do
nh: polypropylene, polystyrene, polycarbonate, polyethelene. C hai loi t mng
chnh: loi foil v loi c kim loi ha.
Loi foil dng cc ming kim loi nhm hay thic to cc bn cc dn in. Loi
c kim loi ha c ch to bng cch phun mng mng kim loi nh nhm hay km
trn mng cht do, kim loi c phun ln ng vai tr bn cc. Vi cng gi tr in
dung v nh mc in p nh thng th t loi kim loi ha c kch thc nh hn loi
foil. u im th hai ca loi kim loi ha l n t phc hi c. iu ny c ngha l
nu in mi b nh thng do qu in p nh thng th t khng b h lun m n t
phc hi li. T foil khng c tnh nng ny.
- T gm (ceramic): l loi t khng phn cc tnh. T gm c ch to gm cht
in mi l gm, trng trn b mt n lp bc lm bn cc.
- T mica: l loi t khng phn cc tnh. T mica c ch to gm nhiu ming
mica mng, trng bc, t chng ln nhau hoc ming mica mng c xp xen k vi
cc ming thic. Cc ming thic l ni vi nhau to thnh mt bn cc, Cc ming thic
chn ni vi nhau to thnh mt bn cc. Sau bao ph bi lp chng m bng sp
hoc nha cng. Thng t mica c dng hnh khi ch nht.
Ngoi ra, cn c t dn b mt c ch to bng cch t vt liu in mi gm gia
hai mng dn in (kim loi), kch thc ca n rt nh. Mng t in (thanh t in) l
dng t c nh sn xut tch hp nhiu t in bn trong mt thanh (v) tit kim
din tch. Ngi ta k hu chn chung v gi tr ca cc t.

33
Hnh 2.25. Hnh dng ca mt s loi t.

2.2.10. Cch c tr s in dung
- T c ghi s trn thn: .1 c ngha l t c in dung C = 0,1 F; .01 c ngha l t
c in dung C = 0,01 F.
- T c ghi s trn thn:103K c ngha l t c in dung:
C = 10000 pF 10%.
Hai s u l s c ngha, s th ba ch s nhn. Ch ch sai s: J = 5%.
K = 10%, M = 20%.
- T c ghi hai ch s trn thn, v d: 47/50 th s u l in dung, n v l pF, s
th hai l tr s in p lm vic, n v l volt.
- T ha: cc tnh c ghi bng du + hoc du -. n v in dung l microfarad,
in p lm vic n v l volt.
V d: trn thn t ha ghi 2200F25V c ngha l t c: C = 2200 F, WV = 25 V
Qui c mu i vi t in tng t qui c mu i vi in tr.
T in gm dng hnh ng c 5 vng mu nh nhau nhng c vng th nm cch xa
hn. ngha cc vng mu: vng th nht, vng th hai ch s tng ng vi mu, vng
th ba ch s nhn, vng th t ch sai s, vng th nm ch c im ring ca n.
T in gm dng hnh ng c 4 vng mu nh nhau nhng c vng th nm rng
hn. ngha cc vng mu: vng th nht, vng th hai ch s tng ng vi mu, vng
th ba ch s nhn, vng th t ch sai s, vng th nm ch h s nhit .
c bit i vi t dn b mt c ba cch m ha thng dng, c ba u dng n v
pF.
- H 33 k hiu ch in hoa v thng: trn thn t ghi mt k hiu v theo sau l s
(0 9) ch s nhn.

K hiu S nhn
A 1.0
B 1.1
C 1.2
D 1.3
E 1.5
F 1.6
G 1.8
H 2.0
J 2.2
K 2.4
a 2.5
L 2.7
M 3.0
N 3.3
b 3.5
P 3.6
Q 3.9
d 4.0
R 4.3
e 4.5
S 4.7
f 5. 0
T 5.1
U 5.6
m 6.0
V 6.2
W 6.8
n 7.0
X 7.5
t 8.0
Y 8.2
y 9.0
Z 9.1
0 = x1
1 = x10
2 = x100
3 = x1000
4 = x10000
5 = x100000

34
V d:
J3 = 2.2 x 1000 = 2200 pF
P2 = 3.6 x 100 = 360 pF
S1 = 4.7 x 10 = 47 pF
- H 24 k hiu ch in hoa: trn thn t ghi mt k hiu v theo sau l s (1 9) ch
s nhn.
V d:
05 = 5 pF
82 = 82 pF
A1 = 10 x 10 = 100 pF
N3 = 33 x 1000 = 33000 pF

K hiu S nhn
A 10
B 11
C 12
D 13
E 15
F 16
G 18
H 20
J 22
K 24
L 27
M 30
N 33
P 36
Q 39
R 43
S 47
T 51
U 56
V 62
W 68
X 75
Y 82
y 90
Z 91
1 = x10
2 = x100
3 = x1000
4 = x10000
5 = x100000

Lu : vi h ny th cc gi tr nh hn 100 pF s c ghi trc tip, cc gi tr ln
hn 100 pF c ghi bng mt ch vi mt s.
- H 24 k hiu ch in hoa v s: trn thn t ghi mt k hiu v s nhn c qui
nh bi mu ca k hiu .

K hiu S nhn (mu)
A 1.0
B 1.1
C 1.2
D 1.3
E 1.5

H 1.6
I 1.8
J 2.0
K 2.2
L 2.4

N 2.7
O 3.0
R 3.3
S 3.6
T 3.9

V 4.3
W 4.7
X 5.1
Y 5.6
Z 6.2

3 6.8
4 7.5
7 8.2
9 9.1
cam = x1.0
en = x10
lc = x100
lam = x1000
tm = x10000
= x100000
35
V d:
W mu cam = 4.7 x 1.0 = 4.7 pF
2.11. ng dng
T thng c dng lm t lc trong cc mch lc ngun, lc chn tn s hay cho
qua tn s no . T c mt trong mch lc th ng, mch lc tch cc,.T lin lc
ni gia cc tng khuch i. T kt hp vi mt s linh kin khc tao nhng mch
dao ng,.Ngy nay cn c t nano tng dung lng b nh nhm p ng nhu cu
cng cao ca con ngi.
2.3. Cun cm
2.3.1. Cu to k hiu
Cun cm (inductor) / cun dy (coil) l dy dn qun nhiu vng lin tip trn 1 ci
li. Li ca cun cm c th l mt ng rng (li khng kh), st bi hay st l.
Ty theo loi li, cun cm c cc k hiu khc nhau:

li khng kh li st bi li st l
Hnh 2.26. K hiu ca cun cm.
2.3.2. H s t cm
H s t cm l i lng c trng cho kh nng tch tr nng lng t trng ca
cun cm.
K hiu: L
n v o: Henri (H)
Milihenri: 1 mH = 10
-3
H
Microhenri: 1 H = 10
-6
H
H s t cm ph thuc vo s vng dy, tit din, chiu di v vt liu lm li ca
cun cm.
L =
0
r

n
2
l
.S =
0
r

td
2
4
(2.30)
0
= 4t .10
-7
H/m
r
: h s t thm tng i ca vt liu lm li i vi chn khng.
n: s vng dy
S: tit din li (m
2
)
L: chiu di li (m)
d: ng knh ca li (m)
Mt khc , h s t cm cn tnh bi cng thc sau:
36

I
n L
|
= (2.31)
AI: bin thin dng in (A)
A|: bin thin t thng (Wb)
Nng lng np vo cun cm
Dng in chy qua cun cm to ra nng lng tr di dng t trng.
W
L
=
1
2
LI
2
(2.32)
2.3.3. Mch tng ng ca cun cm
Ngoi h s t cm L, mt cun cm thc t cn c in tr tn hao (in tr ni
tip) R
S
, c khi k n in dung k sinh C nh mch tng ng hnh 2.23.

Hnh 2.27. Mch tng ng cha k in dung k sinh (a), k n in dung k sinh (b).
H s phm cht Q (Quality Factor):
S
L
R
X
Q = (2.33)
R
S
: in tr ni tip ()
Cm khng l i lng c trng cho sc cn in ca cun cm.
X
L
: cm khng ()
X
L
= L = 2fL (2.34)
: tn s gc (rad/s)
L: h s t cm (H)
f: tn s (Hz)
2.3.4. Hin tng t cm
Nu dng in I chy trong mt cun cm thay i theo thi gian, th cun cm s t
cm ng v sinh ra mt sc in ng cm ng.
t
I
L
t
n e = =
|
(2.35)
AI: bin thin dng in (A)
A|: bin thin t thng (wb)
At: khong thi gian bin thin (s)
R
S
L
(a)
R
S
L
C
(b)
37
L: h s t cm (H)
e: sc in ng cm ng (V)
n: s vng dy qun ca cun cm.
Sc in ng cm ng sinh ra dng in gi l dng in cm ng.
2.3.5. H cm
Khi c hai hay nhiu cun cm th s thay i dng in trong mt cun cm s lm
t thng thay i, cc cun cm cn li phn ng bng cch sinh ra cc sc in ng
cm ng. Khi ngi ta gi l c hin tng h cm gia cc cun cm.
K hiu: M
n v o: Henri (H)
V d: c hai cun cm L
1
, L
2
t gn nhau. Khi dng qua L
1
thay i, t trng sinh
ra t cun L
1
lm nh hng n cun L
2
v ngc li. Nh vy c hin tng h
cm gia hai cun cm L
1
, L
2
. H s h cm:

2 1
L L K M = (2.36)
L
1
, L
2
: h s t cm (H)
M: h s h cm (H)
K: h s lin kt (h s ghp), 0 K 1
H s K ty thuc cch ghp. Nu hai cun dy cng qun trn mt li t th K = 1;
hai cun dy t xa nhau, khng nh hng ln nhau hay c chn t gia hay t thng
gc vi nhau th K = 0.
2.3.6. Cch mc cun cm
a. Mc ni tip

(2.37)

Hnh 2.28. Cun cm mc ni tip
b. Mc song song

(2.38)

L
2

L
t

<=>
L
1

L
t
= L
1
+ L
2

2 1 t
L
1
L
1
L
1
+ =
L
2

L
t

<=>
L
1

38
Hnh 2.29.Cun cm mc song song
2.3.7. Hin tng np x ca cun cm
Xt mch nh hnh 2.26, gi s cun cm cha tch tr nng lng in. Bt kha K
sang v tr s 1 cun cm pht sinh sc in ng cm ng bng ngun V
DC
nhng ngc
du chng li dng
in do ngun V
DC
cung
cp, do lc u dng
in chy qua cun cm
bng khng. Sau dng
in qua cun cm tng
ln theo biu thc sau:
) e - (1
R
V
(t) i

t
DC
L

= (2.39a)
R
L
= (2.39b)
i l thi hng np x ca cun cm.
Ngc vi dng in, hiu in th
gia hai u cun cm lc u bng
ngun V
DC
nhng sau gim dn theo
biu thc:
t
DC L
e V (t) v

= (2.40)
Sau thi gian 5i th cun cm xem
nh c np y, nu khng c tc
ng khc th hin tng vn khng thay
i.
Khi cun cm np y ta bt kha K
sang v tr s 2. Dng in x c thay
i theo hm s m:
t
DC
L
e
R
V
(t) i

= (2.41)
Trong qu trnh x nng lng in th hiu in th gia hai u cun cm thay i
theo biu thc:

t
DC L
e V (t) v

= (2.42)
Sau thi gian 5i th cun cm s x ht nng lng in tch tr ca n.
2.3.8. Phn loi ng dng
C nhiu cch phn loi cun cm:
1
K
L
2
VDC
+
R
Hnh 2.30. Mch kho st hin tng np - x ca cun cm.

0 t 2t 3t 4t 5t

t
V
L
(t)/ I
L
(t)
63
86
95
98 99
37
14
5
2
1
Hnh 2.31. c tuyn np ca cun cm.

39
Phn loi theo kt cu: cun cm 1 lp, cun cm nhiu lp, cun cm c li khng
kh, cun cm c li st bi, cun cm c li st l
Phn loi theo tn s lm vic: cun cm m tn, cun cm cao tn.
Cun cm 1 lp li khng kh: gm mt s vng dy qun vng n st vng kia hoc
cch nhau vi ln ng knh si dy. Dy c th cun trn khung bng vt liu cch
in cao tn (gm; thy tinh; nha) hay nu cun cm cng th c th khng cn
khung m ch cn hai np gi hai bn. Loi dy s dng: dy ng thng (f > 50
MHz) hay dy Litz (f < 2 MHz).
Cun cm nhiu lp li khng kh: khi tr s cun cm ln, cn c s vng dy nhiu,
nu qun mt lp th chiu di cun cm qu di v in dung k sinh qu ln. kch
thc hp l v gim c in dung k sinh, ngi ta qun cc vng ca cun cm thnh
nhiu lp chng ln nhau theo kiu t ong (kiu ton dng tin).
Cun cm c li st bi (bt st t): rt ngn kch thc ca hai loi trn bng
cch lng vo gia n mt li ferit. Thn li c rng xon c. Hai u c kha 2 rnh.
Ngi ta dng mt ci quay vt nha iu chnh li ln xung trong lng cun cm
tng hay gim tr s in cm ca cun cm.
Hnh dng li c dng hnh tr hay hnh xuyn. Tn s lm vic:100 kHz 100 MHz.
Cun cm c li st ming (st l): dng dy ng trng men cch in, c qun
thnh tng lp u n, vng n st vng kia, lp n st lp kia bng mt lt giy bng
cch in. Li t l cc l thp Si, thp Si ht nh hng. Hnh dng li: dng ch E, I,
U, T, .Mi l thp c cch in bi lp ph rt mng oxit st, thp Si hoc varnis.
Vt liu cch in lm tng in tr trong phn ct ngang ca li gim dng in xoy
nhng vn cho php mt t thng cao qua li.

Hnh 2.32. Mt s dng cun cm.
Hin nay, nh sn xut ch to nhiu loi cun cm c sn di dng linh kin d
tr ta c th dng ngay hoc p ng nhu cu ring ta thit k qun dy, chn li
cho cun cm. Sau y l ba cch qun dy tham kho, cch qun hnh (c) c in
dung k sinh nh hn hai cch kia.
Cun cm c ng dng lm micro in ng, loa in ng, rle, bin p, cun
dy trong u c a,.Trong mch in t, cun cm c th mch lc ngun, mch
lc tn s, mch dao ng cng hng, mch to (chnh sa) dng sng, dng xung,
40
Cuon so cap Cuon thu cap I 2 I 1
2.4. Bin th
2.4.1. Khi nim
Bin th (transformer) l dng c dng bin i in p hay dng in xoay chiu
nhng vn gi nguyn tn s.
2.4.2. Cu to k hiu
Cu to v hnh dng ca bin th nh hnh 2.29. Bin th gm 2 cun dy ng
trng men cch in qun trn mt li thp t khp kn: cun nhn in p vo gi l
cun s cp, cun cho ly in p ra l cun th cp. Li t khng phi l mt khi st
m gm nhiu l st mng ghp song song cch in nhau trnh dng in xoy
(Foucoult) lm nng bin th.
Ngoi ra, li ca bin th c th l st bi hay khng kh.

Hnh 2.33. Cu to ca bin th.
K hiu ca bin th nh hnh 2.30.

Hnh 2.34. K hiu bin th li khng kh (a), li st bi (b), li st l (c).
2.4.3. Nguyn l hot ng

Hnh 2.35. Cu to ca bin th.
Khi cho dng in xoay chiu c in th V
1
vo cun s cp, dng in I
1
s to ra
t trng bin thin chy trong mch t v sang cun dy th cp, cun th cp nhn
(a) (b) (c)
V
1
V
2
I
1
I
2
41
c t trng bin thin s lm t thng qua cun dy thay i, cun th cp cm ng
cho ra dng in xoay chiu c in th V
2
.
V
1
= - N
1

A|
At
(2.43)
V
2
= -N
2

A|
At
(2.44)
N
1
: s vng dy ca cun s cp.
N
2
: s vng dy ca cun th cp.
V
1
: in p vo hai u cun s cp.
V
2
: in p ly ra hai u cun th cp.
A|: bin thin t thng (wb)
At: khong thi gian bin thin (s)
2.4.4. Cc cng thc ca bin th
T l v in th
V
2
V
1
=
N
2
N
1
(2.45)
T l dng in:
I
2
I
1
=
N
1
N
2
(2.46)
T l v cng sut: P
1
= V
1
I
1
; P
2
= V
2
I
2

L tng ta c: P
1
= P
2
(2.47a)
<=> V
1
.I
1
= V
2
. I
2

Thc t: P
2
< P
1
(2.47b)
Hiu sut: q =
P
2
P
1
. 100% (2.47c)
T l v tng tr: R
2
=
V
2
I
2
; R
1
=
V
1
R
1

R
1
R
2
=
\
|
.
|
|
N
1
N
2
2
(2.48)
2.4.5. Phn loi - ng dng
Da theo tn s lm vic: bin th m tn, bin th trung tn, bin th cao tn.
Da theo cu to: bin th c li st l, bin th c li st bi, bin th c li khng
kh,
Da theo mc ch s dng: bin th ngun, bin th loa, bin th xut m, bin th
xung, bin th o pha,
ng dng ch yu ca bin th l lm thay i in th, dng in theo yu cu thc
t.
Bin th cng hng l bin th cao tn, cun s cp hoc cun th cp c mc
song song vi mt t in, hnh thnh mch cng hng. Nu c hai cun u c mc t
42
in th ta c bin th cng hng kp. Li ca bin th cng hng lm bng ferrite c
th iu chnh c. Mt s bin th cng hng dng tn s cao hn c li khng kh.

Hnh 2.36. Hnh dng ca bin th.

43
CU HI N TP
1. in tr l g? Hy k tn mt s loi in tr v ni vi ng dng ca n. Nu vi
cch c tr s in tr.
2. in tr ca dy dn l g? Nu cng thc tnh v cho bit tn, n v ca cc i
lng trong cng thc. in tr ca dy dn ph thuc vo nhng yu t no ca dy?
3. Tm hiu nh lut Ohm, nh lut Kirchhoff, ng dng ca n.
4. in tr c my cch mc c bn? Hy k tn v v on mch tng ng gm hai
in tr. Vit biu thc quan h gia cc i lng I, U, R trong on mch. Nu nhn
xt.
5. T in l g? Hy k tn mt s loi t in v ni vi ng dng ca n. Nu vi
cch c tr s in dung.
6. in dung l g? Nu cng thc tnh v cho bit tn, n v ca cc i lng trong
cng thc. in dung ph thuc vo nhng yu t no ca t in?
7. Dung khng l g? Nu cng thc tnh v cho bit tn, n v ca cc i lng
trong cng thc. Dung khng ph thuc vo nhng yu t no?
8. T in c my cch mc c bn? Hy k tn v v on mch tng ng gm hai
t in. Vit biu thc quan h gia cc i lng Q, U, C trong on mch. Nu nhn
xt.
9. Trnh by hin tng np x ca t. Vit biu thc tnh dng in, hiu in th
gia hai u t trong qu trnh np, x ca t in. Nu nhn xt.
10. Vit cng thc tnh nng lng tch tr vo t. cho bit tn, n v ca cc i
lng trong cng thc.
11. Cun cm l g? Hy k tn mt s loi Cun cm v ni vi ng dng ca n.
Nu vi cch c tr s in cm.
12. H s t cm l g? Nu cng thc tnh v cho bit tn, n v ca cc i lng
trong cng thc. H s t cm ph thuc vo nhng yu t no ca cun cm?
13. Cm khng l g? Nu cng thc tnh v cho bit tn, n v ca cc i lng
trong cng thc. Cm khng ph thuc vo nhng yu t no?
14. Trnh by hin tng np x ca cun cm. Vit biu thc tnh dng in, hiu
in th gia hai u cun cm trong qu trnh np, x ca cun cm. Nu nhn xt.
15. Vit cng thc tnh nng lng tch tr vo cun cm. cho bit tn, n v ca cc
i lng trong cng thc.
16. So snh qu trnh np x ca t vi qu trnh np x ca cun cm.
17. Bin th l g? Hy k tn mt s loi bin th v ni vi ng dng ca n.
18. Nu nguyn l hat ng ca bin th.
19. Cho bit cc cng thc ca bin th.
20. Hy k tn v v k hiu ca nhng linh kin hc.

Chng 3: Cht bn dn - diode
44
Chng 3
CHT BN DN DIODE
3.1. Cht bn dn
3.1.1. Khi nim
S dn in ca mt cht ty thuc vo s in t (electron) nm lp v ngoi cng
ca nguyn t. Da trn c s ny ngi ta xc nh s dn in ca mt cht nh sau:
- Cht dn in (conductor) l mt cht c s in t lp ngoi cng t hn rt
nhiu so vi s in t bo ha ca lp .
- Cht cch in (insulator) l mt cht c s in t lp ngoi cng bng hoc gn
bng s in t bo ha ca lp .
- Cht bn dn (semiconductor) l mt cht c s in t lp ngoi cng nm
khong gia hai loi trn.
Ngoi ra, ngi ta c th phn bit cht dn in, cht cch in, cht bn dn, da
theo khi nim in tr sut, in dn sut,. C th ni cht bn dn c dn in
nm khong gia kim loi v cht cch in. Ta c th iu chnh, thay i dn in
ca cht bn dn.
Cht bn dn dng nguyn t c tm thy trong nhm IV ca bng h thng tun
hon. Loi tiu biu ca ngnh in t: Silicium (Si), Germanium (Ge).
Cht bn dn dng hp cht c to thnh bng cch kt hp cc nguyn t nhm
III v V, II v VI, c loi hp cht gm ba hay bn nguyn t. V d: AlGaAs, GaAsP,
AlGaAsSb, GaInAsP. Trng hp c bit dng hp cht nhm IV: SiC, SiGe.
- Hp cht gm hai nguyn t III v V: AlAs, AlP, AlSb, GaAs, GaP, GaSb, InAs,
InP, InSb.
- Hp cht gm hai nguyn t II v VI : CdSi, CdTe, HgS, ZnS, ZnTe.
3.1.2. Bn dn thun
- Khi nim: Bn dn thun l bn dn duy nht
khng pha thm cht khc vo.
- S dn in ca bn dn thun :
Xt bn dn tinh khit Si, Si c 4 in t lp
ngoi cng, 4 in t ny s lin kt vi 4 in t ca
bn nguyn t k cn n, hnh thnh mi lin kt gi
l lin kt cng ha tr.
nhit thp cc lin kt bn vng nn tt
Si
Si
Si Si Si
-
-
-
-
- - - -
Hnh 3.1. Cu trc tinh th Si.

45
c cc in t b rng buc trong mng tinh th, do Si khng dn in.
nhit tng i cao hoc c cung cp nng lng di dng khc: chiu nh
sng, mt trong nhng mi lin kt b ph v, in t thot ra tr thnh in t t do,
li trong mng tinh th mt ch trng thiu in t gi l l trng, l trng mang in
tch dng. Nhit cng cao th s in t t do v l trng hnh thnh cng nhiu
nhng mt ca chng (nng trong mt n v th tch) l bng nhau v thng k
hiu n
i
= p
i
(3.1)
Khi khng c in trng th in t t do v l trng chuyn ng nhit hn lon
khng u tin theo phng no nn khng c dng in.
Khi c in trng t vo tinh th bn dn, di tc dng ca lc in trng in
t v l trng chuyn ng c hng: in t chuyn ng ngc chiu in trng, l
trng chuyn ng cng chiu in trng lm xut hin dng in trong bn dn.
Nh vy, dng in trong bn dn thun l dng chuyn di c hng ca in t t
do v l trng di tc dng ca in trng.
3.1.3. Bn dn tp cht
Bn dn tp cht l bn dn c pha thm cht khc vo. Ty vo cht khc l cht no
m c hai loi bn dn tp cht: bn dn loi N v bn dn loi P.
a. Bn dn loi N
Pha thm mt lng rt t phosphore (P) vo
cht bn dn Si theo t l
8
10
1
, s dn in ca Si
tng ln 10 ln. P l cht nhm V, c 5 in t
lp ngoi cng. Bn in t ca nguyn t P lin
kt vi 4 in t ca bn nguyn t Si khc nhau
nm cn n. Nh vy, P cn tha li mt in t
khng nm trong lin kt ha tr. in t tha ny
rt d dng tr thnh in t t do, nguyn t tp
cht P khi b ion ha v tr thnh mt ion
dng. Nu c in trng p vo, cc ht dn t
do s chuyn ng c hng, to nn dng in. Nu pha cht P cng nhiu th dn
in ca bn dn Si cng tng ln.
Tp cht nhm V cung cp in t cho cht bn dn c bn nn c gi l tp cht
cho (donor). Cht bn dn c pha thm tp cht nhm V gi l bn dn loi N
(Negative).
Nu gi N
d
l nng tp cht cha trong mt n v th tch cht bn dn c bn th
khi c cung cp nng lng y , ton b cc nguyn t tp cht b ion ha.
Nng in t t do do tp cht cung cp l:
Si
Si
Si Si
-
-
-
-
- - - -
P
-
Hnh 3.2. Bn dn loi N.

46
n
d
= N
d
(3.2)
Ngoi s in t t do nh tp cht cung cp, cht bn dn c bn vn c qu trnh
sinh ra cc cp in t - l trng do tc ng ca nhit (hoc nh sng,) ging nh
bn dn thun. Vy tng nng in t t do trong cht bn dn loi N l:
n
n
= N
d
+ p
n
(3.3)
p
n
l nng l trng trong bn dn loi N. n
n
> p
n
nn bn dn loi N c ht ti dn
in a s l in t, ht ti dn in thiu s l l trng. C trng hp ngi ta b qua
vai tr ca ht ti dn in thiu s, ly gn ng i vi bn dn loi N l:
n
n
N
d
(3.4)
b. Bn dn loi P
Pha thm mt lng rt t Bore (B) vo cht bn
dn Si theo t l
8
10
1
, s dn in ca Si tng ln
hn 10 ln. B l cht nhm III, c 3 in t lp
ngoi cng. Ba in t ca nguyn t B lin kt vi
3 in t ca ba nguyn t Si k cn n. Nh vy,
B cn thiu mt in t cho lin kt cui cng. N
d dng nhn thm mt in t ca nguyn t gn
n c ngha l ch cn mt kch thch n (nhit ,
nh sng) l mt trong nhng in t ca cc mi
lin kt hon chnh bn cnh s n th vo mi
lin kt th t (mi lin kt thiu in t trn). Nguyn t tp cht lc tr thnh ion
m, iu ny lm pht sinh mt l trng. Nh vy, c c mt nguyn t tp cht th c
thm mt l trng, nng tp cht cng cao th s l trng cng nhiu. Nu c in
trng p vo th cc l trng ny s tham gia dn in.
Tp cht nhm III tip nhn in t t cht bn dn c bn sinh ra cc l trng
nn c gi l tp cht nhn (acceptor). Cht bn dn c pha thm tp cht nhm III
gi l bn dn loi P (Positive).
Nu gi N
a
l nng tp cht cha trong mt n v th tch cht bn dn c bn th
khi c cung cp nng lng y , ton b cc nguyn t tp cht b ion ha.
Nng in t t do do tp cht cung cp l:
p
a
= N
a
(3.5)
Ngoi s l trng do tp cht to ra, trong cht bn dn c bn cng c qu trnh sinh
ra cc cp in t - l trng do tc ng ca nhit (hoc nh sng,) ging nh bn
dn thun. Vy p
p
l tng nng l trng trong cht bn dn loi P; n
p
l nng in
t trong bn dn loi P. Ta c:
p
p
= N
a
+ n
p
(3.6)
Si
Si
Si Si
-
-
-
-
- - -
In
o
Hnh 3.3. Bn dn loi P.

47
Ta thy p
p
> n
p
nn bn dn loi P c ht ti dn in a s l l trng, ht ti dn
in thiu s l in t. C trng hp ngi ta b qua vai tr ca ht ti dn in thiu
s, ly gn ng i vi bn dn loi P l:
p
p
N
a
(3.7)
3.1.4. Mi ni P N
*Chuyn ng biu kin ca l trng.
Gi s in t ti v tr s 1, l trng v tr s 2, in t dch chuyn t 1 sang 2
li bn 2 in t v bn 1 l trng. Nh vy, in t dch chuyn t 1 sang 2 cn l
trng c xem nh dch chuyn t 2 sang 1. S dch chuyn ca l trng gi l chuyn
ng biu kin ca l trng. iu ny cho ta thy in t v l trng chuyn ng ngc
chiu nhau, in t di chuyn t m sang dng, ngc li l trng di chuyn t dng
sang m.
Sau khi hnh thnh mu bn dn loi P, N; cho hai mu bn dn ny tip xc vi
nhau. Ta c mt lp tip xc P N (mi ni P - N). Ti ni tip xc P - N c hin
tng trao i in tch. in t t vng N khuch tn sang vng P v ngc li l trng
t vng P khuch tn sang vng N. S dch chuyn ny to ra dng thun (dng khuch
tn) i
F
c chiu t P N.

Hnh 3.4. Mi ni P N.
Ti ni tip xc in t v l trng ti hp nhau, bn vng P s tn ti in tch m
(ion m), bn vng N s tn ti in tch dng (ion dng) tn ti mt in trng
trong (in trng ni ti) to ra dng in nghch (dng in tri) i
N
. i
N
ngc chiu vi
i
F
. Khi i
N
= i
F
th s khuch tn ca cc ht ti a s ngng li.
Vng cn mt tip xc gi l vng him (vng khim khuyt). trng thi cn bng,
hiu in th tip xc gia bn dn P v bn dn N c mt gi tr nht nh V
. Hiu th
ny ngn cn, khng cho ht ti (ht dn) tip tc di chuyn qua mt ranh gii, duy tr
trng thi cn bng, nn c gi l hng ro in th.
Bn dn chnh (bn dn c bn) loi Si c V
= 0,6 V
Ge c V
= 0,2 V
3.2. Diode bn dn
3.2.1. Cu to k hiu
Diode bn dn (semiconductor diode) l dng c bn dn c mt mi ni P- N. T mu
bn dn lai P tip xc kim loi a chn ra (cc ra) anode (A: cc dng). Mu bn dn
P N

P N
+
+
+
-
-
-
48
lai N tip xc kim loi a chn ra cathode (K: cc m). Bn ngoi c bc bi lp
plastic.
C nhiu cng ngh ch to: cy ion, khuch tn cht kch tp vo bn dn c tp
cht loi ngc li, ko lp epitaxy,.
V d: Mt diode c th to ra bng cch bt u vi mu bn dn loi N c pha tp
cht N
d
v chuyn i c chn lc mt phn ca mu bn dn thnh loi P bng cch
thm cc tp cht nhn in t c N
a
> N
d
. im m vt liu thay i t loi P sang loi
N c gi l tip xc luyn kim (mi ni luyn kim) (metallurgical junction). Mu bn
dn loi P tip xc kim loi a ra cc anode (A). Mu bn dn loi N tip xc kim loi
a ra cc Cathode (K).

A: Anode: cc dng
K: Cathode: cc m

Hnh 3.5. Cu to (a), k hiu (b) ca diode.
3.2.2. Nguyn l hat ng
Ta c th cp in diode mt trong nhng trng thi sau:
V
A
> V
K
: V
AK
> 0: diode phn cc thun.
V
A
= V
K
: V
AK
= 0: diode khng phn cc.
V
A
< V
K
: V
AK
< 0: diode phn cc nghch.
a. Phn cc thun
Phn cc thun diode: ta ni A vi cc dng ca ngun, K vi cc m ca ngun.
in tch m ca ngun y in t trong N v lp tip xc. in tch dng ca
ngun y l trng trong P v lp tip xc, lm cho vng khim khuyt cng hp li. Khi
lc y ln th in t t vng N qua lp tip xc, sang vng P v n cc dng ca
ngun.Lc y ln l lc diode c V
AK
t gi tr V
, lc ny diode c dng in
chy theo chiu t A sang K.
V
c gi l in th ngng (in th
thm, in th m).
i vi loi Si c V

= 0,6 V (0,7 V); Ge
c V
= 0,2 V.
b. Phn cc nghch

P N
Cathode
Anode
(a)
A K
(b)
+ -
-
-
-
-
-
-
o
o
o
o
o
o
+
+
+
-
-
-
V
DC

Hnh 3.6. Mch phn cc thun diode.
49
Phn cc thun diode: ta ni A vi cc m ca ngun, K vi cc dng ca ngun.
in tch m ca ngun s ht l trng ca vng P, in tch dng ca ngun s ht
in t ca vng N, lm cho in t v l trng cng xa nhau hn. Vng khim khuyt
cng rng ra nn hin tng ti hp gia in t v l trng cng kh khn hn. Nh
vy, s khng c dng qua diode. Tuy nhin, mi vng bn dn cn c ht ti thiu s
nn mt s rt t in t v l trng c ti hp to nn dng in nh i t N qua P gi
l dng nghch (dng r, dng r). Dng ny
rt nh c vi nA. Nhiu trng hp coi nh
diode khng dn in khi phn cc nghch.
Tng in p phn cc nghch ln th dng
xem nh khng i, tng qu mc th diode
h (b nh thng). Nu xt dng in r th
diode c dng nh chy theo chiu t K v A
khi phn cc nghch.
c. Khng phn cc:
Khi ta dng ngun V
DC
iu chnh c v chnh v 0, lc mch c V
A
= V
K
=
0 hay V
AK
= 0 hoc trng hp khc V
A
= V
K
0 nhng V
AK
vn bng 0. Lc ny diode
khng c phn cc. V khng c s chnh lch in th nn khng c s dch chuyn
ca cc ht ti nn khng c dng in.
3.2.3. c tuyn Volt Ampe
I
S
: dng nghch bo ha.
V
: in th ngng.
V
B
: in th nh thng.
k: hng s Boltzman, k = 1,38.10
-23
J/
0
K
T: nhit tuyt i ca cht bn dn,
nhit thng T = 300
0
K.
q
kT
T
= = 0,025 V 0,026 V = 26 mV (3.8)

|
|
.
|
\
|
=
|
|
.
|
\
|
1 e I I
0,026
V
S D
D

(3.9a)
Phn cc thun: V
D
>0
0,026
V
D
e 1
0,026
V
S D
D
e I I = (3.9b)

Khng phncc: V
D
= 0
0,026
V
D
e =1 I
D
= I
S
(1 1) = 0 (3.9c)
Phn cc nghch: V
D
< 0
0,026
V
D
e 1 I
D
= I
S
( 1) = -I
S
(3.9d)
Du (-) ch chiu dng in qua diode khi phn cc nghch ngc vi chiu dng
in qua diode khi phn cc thun.
+ -
-
o
+
+
+
-
-
-
V
DC

-
-
-
-
-
o
o
o
o
o
Hnh 3.7. Mch phn cc nghch diode.
V
B

I
D
0
V

V
D
I
S

Hnh 3.8. c tuyn Volt Ampe.
50
3.2.4. in tr diode
C hai loi in tr lin quan n diode:
- in tr tnh: in tr i vi dng in mt chiu.

D
D
D
I
V
R = (3.10)
Khi diode c phn cc thun c dng ln chy qua diode nn in tr thun nh.
Khi diode c phn cc nghch c dng r nh chy qua diode nn in tr thun
ln.
Ngi ta li dng c tnh ny o kim tra diode bng my o V.O.M.
in tr thun v in tr nghch ca diode ph thuc vo cht bn dn lm diode l
Ge hay Si theo bng sau:

in tr thun in tr nghch
Diode Si Vi vi trm k
Diode Ge Vi vi M
Bng 3.1. in tr ca diode.
Kt qu:
in tr thun = in tr nghch = 0 th diode b nh thng.
in tr thun = in tr nghch = th diode b t.
in tr thun ng nhng in tr nghch gim xung kh nhiu th diode b r, r
khng dng c.
in tr thun, in tr nghch ng nh bng trn th diode tt.
in tr ng: in tr i vi tn hiu xoay chiu.

D D
D
d
I
0,026
i
v
r = = (3.11)
Ngoi ra, i vi diode l tng: nu n c phn cc thun th khng c in tr v
nu n c phn cc nghch th c in tr v cc. Vy diode l tng c xem nh
cng tc (ON hay OFF) ph thuc vo cc tnh ca in p t vo diode.
Mch tng ng ca diode i vi tn hiu xoay chiu nh hnh 3.15.

Hnh 3.9. Mch tng ng ca diode i vi tn hiu xoay chiu.
r
d
r
1
C
t
(a)
r
d
C
t
(b)
51
r
1
: in tr ca hai cht bn dn (ngoi vng him), thng b qua.
r
d
: in tr ng (in tr vi phn): in tr i vi tn hiu xoay chiu.

D D
D
d
I
0,026
i
v
r = = (3.12)
C
t
: in dung tng ng ca diode gm in dung mi ni C
j
v in dung khuch
tn C
d
.
C
t
= C
j
+ C
d
(3.13)
Tr s C
t
thay i ph thuc in p t vo diode. Vi tn hiu tn s thp, nh
hng ca C
t
c th b qua. Nhng vi tn hiu tn s cao th nh hng ca C
t
l ng
k. Chnh in dung ny lm gim tr khng theo chiu nghch tn s cao, lm xu c
tnh chnh lu ca diode v lm chm tc ng m khi dng diode nh kha in t.
3.2.5. Phn loi
Nh bit diode c bn l mt mi ni P N nhng c th da theo kt cu, da
theo cng dng m ta phn bit cc loi diode nh sau:
Da theo kt cu lp tip xc P N
C hai loi: diode tip im v diode tip mt.
Diode tip im: l diode c mt tip xc gia hai lp bn dn P N rt nh gn nh
mt im (th tch rt nh) c bc bi lp v thy tinh. Dng in nh mc rt b
(khong vi chc miliampe), in p ngc khng vt qu vi chc volt.
Diode tip mt: l diode c mt tip xc gia hai lp bn dn P N l mt mt
phng, lp v bn ngoi l nha. Dng in nh mc kh ln (khong vi trm
miliampe n vi trm ampe), in p ngc t n vi trm volt.
Da vo cng dng
- Diode chnh lu: Hnh dng to, thuc
loi tip mt, hat ng tn s thp. Diode
chnh lu dng i in xoay chiu sang
in mt chiu. y l loi diode rt thng
dng, thng c bc nha mu en, c
vch trng nh hnh 3.10.
Khi dng cn quan tm hai thng s: in p ngc cc i v dng thun ti a ca
diode, c th mc ni tip tng in p ngc, mc song song tng dng chu ng.
- Diode tch sng: hnh dng nh thuc loi tip im, hot ng tn s cao. Cng
lm nhim v nh diode chnh lu nhng ch yu l vi tn hiu nh v tn s cao.
Diode ny chu dng t vi mA n vi chc mA. Thng l loi Ge.
- Diode xung l diode dng trong cc mch c tc chuyn trng thi rt nhanh v
n c tn s hat ng cao hn nhiu so vi diode thng.
Hnh 3.10. Hnh dng diode chnh lu.
52
Cc my in t hin i thng dng b ngun cung cp in theo kiu ngt m
(switching), to ra dng in xoay chiu dng xung c tn s kh cao, ti vi chc ngn
Hz. Sau dng diode xung chnh lu thnh in DC cung cp cho my. Trong in
t s, ta c th dng diode xung lm cc chuyn mch in t hai trng thi: dn khi
phn cc thun, ngng (tt) khi phn cc nghch.
Hnh dng diode xung cng tng t diode thng, mun phn bit ta phi dng sch
tra cu tra.
Cc thit b xung cn dng loi khc gi l diode Schottky. Loi ny c cu to hi
khc so vi diode thng, tc chuyn trng thi ca n rt cao.
- Diode zener: c cu to ging diode thng nhng cht bn dn c pha tp cht
vi t l cao hn v c tit din ln hn diode thng, thng dng bn dn chnh l Si.

Hnh 3.11. K hiu ca diode zener.
c tuyn volt ampe trong qu trnh
nh thng gn nh song song vi trc
dng in, ngha l in p gia A v K
gn nh khng i. Ta li dng u im
ny dng zener lm phn t n nh
in p.
Hnh 3.12. c tuyn volt ampe ca diode zener.
Lu : Diode zener dng n p
khi c phn cc nghch. Khi phn
cc thun diode zener ging diode
thng.
Cc nh ch to thay i nng
tp cht to ra cc loi diode
zener c gi tr n p V
z
khc nhau,
v d: 5 V; 6 V; 6,8 V; 7,5 V;
Hnh 3.13 l mch n p n gin c in p ra trn ti V
t
= V
z
l mt tr s khng
i trong khi in th ngun cung cp V
DC
thay i. Tuy nhin cn khi V
DC
< V
z
th
mch cha n p, V
DC
= V
z
th zener mi bt u ghim p.
- Diode quang - diode cm quang (photodiode) c cu to bn dn ging nh diode
thng nhng t trong v cch in c mt mt l nha hay thy tinh trong sut
nhn nh sng bn ngoi chiu vo mi ni P-N ca diode, c loi dng thu knh hi t
tp trung nh sng.
V
Z

I
D
0
V

V
D
I
S

+
V
DC

V
z
= V
t

Z
R
R
t

Hnh 3.13. Mch n p n gin.
53

Hnh 3.14. Cu to ca diode quang.
K hiu ca diode quang nh hnh 3.15:

Hnh 3.15. K hiu ca diode quang
Qua th nghim cho thy khi photodiode c phn cc thun th hai trng hp mi
ni P N c chiu sng hay che ti dng in thun qua diode thay i t. Ngc li
diode b phn cc nghch, mi ni P N c chiu sng th dng in nghch tng ln
ln hn nhiu ln so vi khi b che ti. Do nguyn l trn nn diode quang c s dng
trng thi phn cc ngc trong cc mch iu khin nh sng.
- Diode pht quang: LED (Light Emitting Diode)

Hnh 3.26. K hiu (a), hnh dng (b) ca LED.
Diode pht quang c cu to gm mt mi ni P N, tip xc kim loi a ra cc A
(Anode), K (cathode). Diode pht quang c lm t cc cht GaAs, GaP, GaAsP,
SiCDiode pht quang l diode pht sng khi c dng chy qua n. Diode ny c th
pht ra nhiu mu sc khc nhau.
- Diode GaAs cho ra nh sng hng ngoi m mt nhn khng thy c, n c s ti
hp vng dn vng ha tr l trc tip. Bc x pht sinh ch yu l qua s ti hp.
Nng lng photon khong 1,4eV.
A K

(a) (b)
PHOTODIODE
K A
A K
nh sng
chiu vo
P
SiO
2
Vng him
N
54
- Diode Ga AsP vi s ti hp trc tip v nng lng ln hn 1,7eV cho ra nh sng
kh kin, khi thay i hm lng photpho s cho ra nh sng khc nhau nh , cam,
vng.
- Diode GaP pha thm tp cht (Nit v ZnO) s c bc x cho ra nh sng. Ty loi
tp cht m diode c th cho ra cc mu t , cam, vng, xanh l cy.
- Diode SiC khi pha thm tp cht s cho ra nh sng mu xanh da tri. LED mu
xanh da tri cha ph bin v gi thnh cao.
Do khc nhau v vt liu ch to nn in p ngng ca cc loi LED cng khc
nhau.
LED c V = 1,6 V 2 V
LED cam c V = 2,2 V 3 V
LED xanh l c V = 2,7 V 3,2 V
LED vng c V = 2,4 V 3,2 V
LED xanh da tri c V = 3 V 5 V
LED hng ngoi c V = 1,8 V 5 V
Tng t diode thng, LED cng c ba trng thi:
V
AK
> 0: LED c phn cc thun.
V
AK
= 0: LED khng c phn cc.
V
AK
< 0: LED c phn cc nghch.
LED ch pht sng trong trng hp dn in (cho dng chy qua) khi n c phn
cc thun v V
AK
nm trong khong mc ngng cho php ca LED. Nhng trng hp
cn li LED tt.
Lu : c tuyn volt ampe ca LED tng t c tuyn volt ampe ca diode
thng nhng khong mc ngng cho php ca LED ty loi LED v mc ngng ny
ln hn mc ngng ca diode thng. in p nghch ti a ca LED tng i thp.
Khi dng thng mc in tr ni tip vi LED hn dng qua LED.
LED hai mu
LED hai mu l loi LED i gm hai LED nm song song v ngc chiu nhau,
trong c mt LED v mt LED xanh l cy
hay mt LED vng v mt LED xanh l cy.
Loi LED hai mu thng ch cc tnh ca
ngun hay chiu quay ca ng c.
K hiu LED i loi hai mu nh hnh 3.17.
Nu chn A
1
c in p sao cho v nm
trong khong mc ngng cho php th LED
1

A
2 A
1
LED
1
LED
2
Hnh 3.17. K hiu LED hai mu.
V > 0
A1A2
55
sng v ngc li nu chn A
2
c in p sao cho v nm trong khong mc
ngng cho php th LED
2
sng.
Tng qut:
- Khi ch c dng qua LED
1
th LED sng mu ca LED
1
.
2
2
.
- Khi khng c dng qua hai LED th LED tt.
LED ba mu
LED ba mu cng l loi LED i nhng khng ghp song song m hai LED ch c
chung cc cathode, trong mt LED ra chn
ngn, mt LED mu xanh l cy ra chn di, chn
gia l cathode chung.
K hiu LED i loi ba mu nh hnh 3.18. Nu
chn A
1
c in p dng th LED sng, nu chn
A
2
c in p dng th LED xanh sng, nu chn A
1

v A
2
c in p dng th hai LED u sng v cho
ra nh sng mu vng.
Tng qut:
1
1
.
2
2
.
- Khi c dng qua hai LED th LED sng mu pha ca mu LED
1
v mu LED
2
.
- Khi khng c dng qua hai LED th LED tt.
Mt s mch ng dng ca LED
Mch bo ngun DC
Khi s dng LED iu quan trng l phi tnh in tr ni tip vi LED c tr s
thch hp trnh dng in qua LED qu ln s lm h LED.
in tr trong mch bo ngun DC c tnh theo cng thc:
R =
LED
LED DC
I
V V

Hnh 3.19. Mch bo ngun DC.
A
1
A
2
LED
1
LED
2
Hnh 3.18. K hiu LED ba mu.
D1
Rt
LED
C
D2
V
DC
VAC
3 6
5
1 4
R
V < 0
A1A2
56
Mch bo ngun AC

Hnh 3.20. Mch bo ngun AC.
Trong mch bo ngun AC, LED ch sng khi c phn cc thun bng bn k thch
hp, khi LED b phn cc nghch th diode D c phn cc thun nn dn in gi
cho mc in p ngc trn LED l V
D
= 0,7V trnh h LED.
in tr trong mch bo ngun AC c tnh theo cng thc:
R =
LED
LED AC
I
V V
(3.14)
LED c ng dng nhiu trong cc mch in t: mch bo v thit b, mch quang
bo, mch n trang tr, mch chi, mch kim sot in p cho xe hi,.c bit
LED c tch hp thnh nhiu dng n rt p v tin li. Hnh 3.21 l mt dng bng
n ng dng LED. Tui th ca LED cao hn bng n thng, ty loi LED m ta c
c trng chiu sng khc nhau.

Hnh 3.21. Dng bng n ng dng LED.

Hnh 3.22. Ma trn LED.
Ngoi ra, LED pht ra tia hng ngoi (IRED) dng truyn tn hiu trong cc b
ghp quang, c tn hiu, mch iu khin t xa,
LED by an
LED by on c loi anode chung v loi cathode chung. Hin nay LED by on
c dng nhiu trong cc thit b hin th s.
R
V
AC
LED

D
57

Hnh 3.23 Mch tng ng vi cu to ca LED loi K chung (a), A chung (b).

Hnh 3.24. Hnh dng ca LED by on.
LED by on l tp hp tm LED c ch to dng thanh di sp xp nh hnh
3.23 v c k hiu bng tm ch ci l a, b, c, d, e, f, g, p. Phn ph ca LED by on
l mt chm sng p ch du phy thp phn. Du chm ny l mt LED p tng ng
c pht sng. Khi cho cc thanh sng vi cc s lng v v tr thch hp ta c nhng
ch s t 0 n 9 v nhng ch ci t A n F.
- Diode bin dung (Varicap)

Hnh 3.25. K hiu diode bin dung.
Diode bin dung (Varicap) l loi diode c in dung k sinh thay i theo in p
phn cc.
Cu to diode ti mi ni P-N c hng ro in th lm cho in t ca vng N
khng sang c vng P. Khong cch ny coi nh mt lp cch in c tc dng nh
in mi trong t in v hnh thnh t in k sinh, k hiu C
D
. in dung C
D
c tr s
cng c tnh theo cng thc :

d
S
C
D
=
(3.15)
Trong : c: hng s in mi.
S: tit din mi ni.
d: b dy lp in mi thay i theo hiu in th V
D
.
A K

c a
GND
f b d e g
p
(a)
d b e
+Vcc
a g c f
p
(b)
d

g

f

b

e

P
c

a
58
Diode bin dung c dng ch yu trong cc mch cng hng vi vai tr l mt t
in bin i theo in p iu chnh tn s cng hng ca mch. V d: trong cc
b tuner ca TV, b iu hng ca my radio,.
Thc t, khi dng ta cn lu :
- Loi diode.
- Dng thun ti a ca diode.
- in p ngc ti a m diode chu c.
- c bit vi loi diode zener ta cn xem in p ghim V
z
.
Trn thn diode thng c ghi mt s k hiu di dng ch s hay vng mu. Ta c
th c trc tip hoc tra cu bit c vi thng s ca diode trc khi s dng n.
V d: DZ5.6 V
Z
= 5,6 V
DZ9.1 V
Z
=9,1 V
3.2.6. Mch chnh lu
a. Mch chnh lu bn k
Xt mch nh hnh 3.26, bin th
dng gim in p xoay chiu xung
tr s thch hp.
Gi s bn k u ti A l bn k
dng, D c phn cc thun nn dn
in, c dng I
L
qua ti vi chiu t trn hng xung, v cho ra in th trn ti V
DC

dng bn k dng gn bng V
A
. Bn k k tip ti A l bn k m, D phn cc nghch
nn khng c dng hay dng qua ti bng khng v V
DC
= 0.
Gi tr trung bnh ca in p ra:
) ( sin
2
1
2
0
0
t td U V e e
t
t
}
= (3.16)

Hnh 3.27. Dng sng vo, ra ca mch chnh lu bn k.
b. Mch chnh lu ton k
-
t
+ + +
- -
t
+ + +
V
A

V
DC

C t lc
D
A
R
L

V
AC

Hnh 3.26. Mch chnh lu bn k.
59
Dng hai diode
Xt mch nh hnh 3.28. Mch
dng bin p o pha, cun th
cp c ba u ra, im gia chia
cun th thnh hai na cun bng
nhau. iu ny gip cho diode D
1

v D
2
lun phin dn in trong
mi bn k, c th l: gi s bn k
u ti A l bn k dng, tng
ng ti B l bn k m. Ta c D
1
dn in, D
2
ngng dn, cp dng qua ti c chiu t
trn hng xung to hiu in th V
DC
gia 2 u ti. Bn k k tip A l bn k m,
tng ng ti B l bn k dng. Ta c D
1
ngng dn, D
2
dn in, cp dng qua ti c
chiu t trn hng xung, to ra V
DC
.

Hnh 3.29. Dng sng vo, ra ca mch chnh lu ton k.
) ( sin
2
2
0
0
t td U V e e
t
t
}
= (3.17)
Dng cu diode
Xt mch nh hnh 3.30. Gi s
bn k u ti A l bn k dng th
ta c D
1
v D
3
dn in, cp dng
qua ti c chiu t trn hng
xung. D
2
v D
4
ngng dn. Bn k
k tip ti A l bn k m th ta c
D
1
v D
3
ngng dn, D
2
v D
4
dn
in, cp dng qua ti c chiu t
-
t
+ + +
- -
t
V
A

V
DC

+ + + + + +
C t lc C
D
1

A
V
AC

D
2

R
L

Hnh 3.28. Mch chnh lu ton k dng hai diode.
D
2

A
R
L

V
AC

D
1

D
3

D
4

Hnh 3.30. Mch chnh lu ton k dng cu diode.
60
trn hng xung.
Dng sng vo, ra ca mch nh hnh 3.29.
Nh vy, nhng mch trn c in p ra trn ti l in p mt chiu cn b nhp
nhy. gim bt nhp nhy, nng cao cht lng ra ta mc thm t lc C song song vi
ti.
c. Chnh lu m dng
Mch dng bin p o pha v cu
diode.
C
1
v C
2
l 2 t lc ngun.
Ng ra l hai ngun in p mt
chiu i xng V
CC.

d. Mch nhn p
Mch c tc dng chnh lu v nng
cao c in p ra ln 2, 3, n ln in p nh ca ngun xoay chiu.
- Mch chnh lu tng i in th kiu Schenbel

Hnh 3.32. Mch chnh lu nhn i in p kiu Schenbel.
Gi s bn k u ti A l bn k m, tng ng ti B l bn k dng, D
1
dn in,
D
2
ngng dn, dng in chy t dng qua D
1
np vo t C
1
mt hiu in th V
DC
c
cc tnh nh hnh v bn k k tip ti A l bn k dng, ti B l bn k m, D
1
ngng
dn, D
2
dn in vi in th p vo D
2
gm: in th t C
1
ni tip vi in th xoay
chiu bn k dng. Nh vy D
2
dn np vo t C
2
mt hiu in th l 2V
DC
cp in
cho ti.
- Mch chnh lu tng i in th kiu Latour
Gi s ti A l bn k dng, D
1
dn in, D
2
ngng dn, dng in qua D
1
np vo
t C
1
mt hiu in th l U
2
. Bn k k tip ti A l bn k m, D
1
ngng dn, D
2
dn
in, dng in qua D
2
np vo t C
2
mt lng in th V
DC
. Nh vy c chu k in
xoay chiu vo, in th mt chiu ng ra gm hiu in th gia hai u t C
1
cng
vi hiu in th gia hai u t C
2
c np t C
3
. N chnh l 2V
DC
cp in cho ti.

C
1
C
2
D
2
D
1
V
0
= 2V
DC
V
AC

Hnh3.31. Mch chnh lu m dng
-V
CC

D
2

A
V
AC

D
1

D
3

D
4

+V
C
C

C
1

C
2

61

Hnh 3.33. Mch chnh lu nhn i in p kiu Latour.

V
AC
V
0
= 2V
DC
D
1
D
2
C
1
C
2
C
3
62
CU HI N TP
1. Hy phn bit cht cch in, cht bn dn, cht dn in. Cho v d.
2. Bn dn thun l g? Nu s dn in ca bn dn thun.
3. Bn dn tp cht l g? C my loi? K tn v nu c trng ca n.
4. Hy gii thch c ch dn in ca cht dn in, cht cch in, cht bn dn,
bn dn loi N, bn dn loi P, mi ni P N theo l thuyt vng nng lng.
5. Diode bn dn l g? Nu nguyn l hot ng ca n. Cho bit iu kin n
dn in, iu kin n ngng dn. Hy v v gii thch c tuyn volt ampe ca
diode.
6. Khi no cn dng diode mc ni tip, diode mc song song?
7. Nu cch o th diode.
8. Hy k tn v v k hiu ca mt s loi diode bn dn v cho bit vi ng dng
ca n.
9. Diode zener cn c gi l diode g? Ti sao?
10. Diode quang l g? Nu nguyn l hot ng ca diode quang.
11. Cho bit vi mch ng dng ca diode quang.
12. LED l g? Nu nguyn l hot ng ca LED.
13. LED by on l g? V tr cc LED a, b, c, d, e, f, g, p trn LED by on l c
nh hay thay i c? Ti sao?
14. Hy v nhng on sng tng ng trn LED by on hin th cc ch s 0,1,
2,, 9.
15. Hy k tn LED sng, LED tt trong LED by on khi dng n hin th cc ch
s 0, 1, 2, ., 9.
16. Hy k tn mt s loi LED v v k hiu tng ng, cho bit vi ng dng ca
n.
17. Hy k tn nhng linh kin quang in t hc v chia n ra hai nhm linh kin
bin i tn hiu quang in, in quang.
18. Hy v v gii thch nguyn l hot ng ca mt s mch ng dng c trnh
by trn.

Chng 4: Transistor mi ni lng cc
63
Chng 4
TRANSISTOR MI NI LNG CC
Transistor mi ni lng cc (BJT) c pht minh vo nm 1948 bi John Bardeen
v Walter Brittain ti phng th nghim Bell ( M). Mt nm sau nguyn l hot ng
ca n c William Shockley gii thch. Nhng pht minh ra BJT c trao gii
thng Nobel Vt l nm 1956. S ra i ca BJT nh hng rt ln n s pht trin
in t hc.
BJT Bipolar Junction Transistor Transistor mi ni lng cc Transistor tip
xc lng cc Transistor tip gip hai cc Transistor lng ni Transistor lng
cc.
4.1. Cu to k hiu

Hnh 4.1. Cu to (a) mch tng ng vi cu to (b) k hiu (c) ca BJT loi NPN.

Hnh 4.2. Cu to (a) mch tng ng vi cu to (b) k hiu (c) ca BJT loi PNP.
BJT l mt linh kin bn dn c to thnh t hai mi ni P N, nhng c mt
vng chung gi l vng nn.
Ty theo s sp xp cc vng bn dn m ta c hai loi BJT: NPN, PNP.

C
E
B
N
P
N

C
E
B

C
E
B
(a) (b) (c)

C
E
B
P
N
P

E
C
B

E
C
V
BB
PNP
(b)
(a)
(c)
64
Ba vng bn dn c tip xc kim loi ni dy ra thnh ba cc:
- Cc nn: B (Base)
- Cc thu: C (Collector)
- Cc pht: E (Emitter)
Trong thc t, vng nn rt hp so vi hai vng kia. Vng thu v vng pht tuy c
cng cht bn dn nhng khc nhau v kch thc v nng tp cht nn ta khng th
hon i v tr cho nhau.
4.2. Nguyn l hot ng

Khi cha c ngun cp in V
CC
, V
EE
th BJT c hai mi ni P N trng thi cn
bng v hng ro in th mi mi ni duy tr trng thi cn bng ny.
Vi hnh 4.3, ta chn ngun V
CC
V
EE
v tr s in tr sao cho tha iu kin:
- Mi ni P N gia B v E (lp tip gip, lp tip xc J
E
) c phn cc
thun.
- Mi ni P N gia B v C (lp tip gip, lp tip xc J
C
) c phn cc
nghch.
- V
BE
t th ngng ty loi BJT.
in t t cc m ca ngun V
EE
di chuyn vo vng pht qua vng nn, ng l tr
v cc dng ca ngun V
EE
nhng v: vng nn rt hp so vi hai vng kia v ngun
V
CC
V
EE
nn a s in t t vng nn vo vng thu, ti cc dng ca ngun V
CC
,
mt t in t cn li v cc dng ca ngun V
EE
. S dch chuyn ca in t to thnh
dng in:
- Dng vo cc nn gi l dng I
B
.
- Dng vo cc thu gi l dng I
C
.
- Dng t cc pht ra gi l dng I
E
.
Ngoi ra, mi ni P N gia B v C c phn cc nghch cn c dng r (r) rt
nh gi l I
CBO
.
+ - -
I
C
Rc
e
I
E
+
V
EE
e
I
B
Vcc
e
-
R
E

Hnh 4.3. Mch kho st gii thch nguyn l hot ng ca BJT.
65
4.3. H thc lin h gia cc dng in

Hnh 4.4. Mch tng ng vi hnh 4.3
S dch chuyn ca cc in t nh trn cho thy:
I
E
= I
B
+ I
C
(4.1)
I
C
= I
E
(4.2)
= (Tng s in t dch chuyn n vng thu) / (Tng s in t dch chuyn t vng
pht)
H s gn bng 1.
T (4.2) ta c:
I
I
C
E
= (4.3)
Th (4.3) vo (4.1) ta c:
B C
B C
C B
C
I
1

I
I 1)
1
( I
I I
=
=
+ =
(4.4)
t
1

= (4.5)
c gi l h s khuch i dng.
I
C
= I
B
(4.6)
Kt hp (1) v (4) ta c h thc thng dng:
I
E
= I
B
+ I
C
I
C
= I
B
(4.7)
Mi ni gia nn v thu phn cc nghch cn c dng in r (dng r nh diode
phn cc nghch) gi l I
CBO
rt nh (c A). Vy nu xt dng r ta c:
I
C
= I
E
+ I
CBO
(4.8)
I I
I
CBO C
E

= (4.9)
Th (4.9) vo (4.1) ta c:
I
C
I
B
I
E
R
C
V
EE
R
E
V
CC
66
1
I
I I
1
I
I
1

I
I
I 1)
1
( I
I I
I I
CBO
B C
CBO
B C
CBO
B C
C B
CBO C
+ =

+
=
+ =
+ =
(4.10)
1
I
I I I I I
CBO
B C C B E
+ = ~ + = (4.11)
Khi b qua dng in r I
CBO
th phng trnh (4.11) tr thnh phng trnh (4.7),
phng trnh (4.10) tr thnh phng trnh (4.6).
4.4. Cc cch mc c bn
4.4.1. BJT mc kiu cc pht chung
Mch dng BJT mc kiu cc pht chung (Common Emitter CE) nh hnh 4.5.

Hnh 4.5. BJT mc kiu cc pht chung.
4.4.2. BJT mc kiu cc nn chung
Mch dng BJT mc kiu cc nn chung (Common Base CB) nh hnh 4.6.

Hnh 4.6. BJT mc kiu cc nn chung.
R
C

R
B1

R
B2

C
2

C
1

R
E

V
i

V
O

+V
CC

R
B1

R
B2

C
1

C
2

R
C

R
E

C
B

+ V
CC

V
O

V
i

67
4.4.3. BJT mc kiu cc thu chung
Mch dng BJT mc kiu cc thu chung (Common Collector CC) nh hnh 4.7.

Hnh 4.7. BJT mc kiu cc thu chung.
CE:
-Tn hiu vo B so vi E, tn hiu ra C so vi E.
- Pha gia tn hiu vo v ra: o pha.
- H s khuch i A
i
, A
v
ln.
CB:
-Tn hiu vo E so vi B, tn hiu ra C so vi B.
- Pha gia tn hiu vo v ra: cng pha.
- H s khuch i A
v
ln, A
i
1.
CC:
- Tn hiu vo B so vi C, tn hiu ra E so vi C.
- Pha gia tn hiu vo v ra: cng pha.
- H s khuch i A
i
ln, A
v
1.
4.5. c tuyn ca BJT

Hnh 4.8. Mch kho st c tuyn ca BJT.
+V
CC

R
E

C
1

C
2

R
B1

R
B2

V
O

V
i

V
BB

V
CC

R
C

R
B

R
B

68
Xt mch nh hnh 4.8. Vi V
BE
l hiu in th gia cc nn B v cc pht E.
V
CE
l hiu in th gia cc thu C v cc pht E.
4.5.1. c tuyn ng vo I
B
(V
BE
) ng vi V
CE
= const
Chn ngun V
CC
dng xc nh c V
CE
=
const. Chnh ngun V
BB
thay i V
BE
t 0 tng ln
n gi tr nh hn in th ngng V
th o dng I
B

0. Tip tc tng ngun V
BB
c V
BE
= V
th bt
u c dng I
B
v I
B
cng tng theo dng hm s m
nh dng I
D
ca diode phn cc thun.

Hnh 4.9. c tuyn ng vo ca BJT
4.5.2. c tuyn truyn dn I
C
(V
BE
) ng vi V
CE
= const
kho st c tuyn ny, ta o, chnh ngun tng t c tuyn ng vo nhng
dng th o I
C
, quan st xem I
C
thay i nh th no khi V
BE
thay i. Ta c c tuyn
truyn dn I
C
(V
BE
) c dng ging nh c tuyn ng vo I
B
(V
BE
) nhng dng I
C
c tr s
ln hn I
B
nhiu ln.
I
C
= |I
B
(4.12)
4.5.3. c tuyn ng ra I
C
(V
CE
) ng vi I
B
= const
Ngun V
BB
phn cc thun mi ni P N gia B v E to dng I
B
. V
CC
Khi in
th V
B
<V tc V
BE
< V th c dng I
B
= 0 v I
C
= 0 mc d c tng ngun. Khi in th
V
BE
V th c dng I
B
0.
Thay i V
BB
I
B
c tr s no
, dng my o, gi s o c
I
B
= 15 A. Lc ny gi c nh I
B

bng cch khng i V
BB
, tip theo
thay i V
CC
V
CE
thay i, o
dng I
C
tng ng vi V
CE
thay i.
Ban u I
C
tng nhanh theo V
CE
,
nhng n gi tr c I
C
= |I
B
th I
C

gn nh khng tng mc d hiu
in th V
CE
tng nhiu. Hnh 4.10. H c tuyn ng ra ca BJT
Mun I
C
tng cao hn th phi tng V
BB
c I
B
tng cao hn, tip tc thay i V
CC

o I
C
tng ng, ta cng thy lc u I
C
tng nhanh theo V
CE
, nhng n gi tr bo
ha I
C
= |I
B
, I
C
gn nh khng tng mc d V
CE
vn tng.
V

I
B

V
BE

I
B
= 60 A
I
B
= 15 A
I
B
= 30 A
I
B
= 0 A

V
CE
(V)
I
B
= 45 A
I
c
(mA)
0

69
Kho st tng t I
C
(V
CE
) nhng gi tr I
B
khc nhau ta c h c tuyn ng ra nh
hnh 4.10.
Trn y ta xt c tuyn ca BJT mc kiu CE.Ta cng c th xt c tuyn ca
BJT mc kiu khc:
BJT mc kiu CB:
- c tuyn ng vo I
E
(V
EB
) ng vi V
CB
= const.
- c tuyn truyn dn I
C
(V
EB
) ng vi V
CB
= const.
- c tuyn ng ra I
C
(V
CB
) ng vi I
E
= const.
BJT mc kiu CC:
- c tuyn ng vo I
B
(V
BC
) ng vi V
EC
= const.
- c tuyn truyn dn I
E
(V
BC
) ng vi V
EC
= const.
- c tuyn ng ra I
E
(V
EC
) ng vi I
B
= const.
4.6. Phn cc BJT
BJT c rt nhiu ng dng trong cc thit b in t, ty theo tng ng dng c th
m BJT cn cung cp in th v dng in cho tng chn mt cch thch hp. Phn cc
(nh thin) l p t hiu in th cho cc cc BJT. Phn cc BJT l chn ngun in
DC v in tr sao cho I
B
, I
C
, V
CE
c tr s thch hp theo yu cu.
iu kin BJT dn in:
- Mi ni P N gia B v E (tip gip J
E
) c phn cc thun.
- Mi ni P N gia B v C (tip gip J
C
) c phn cc nghch.
- V
BE
t th ngng ty loi BJT.
BJT loi NPN:
V
BE
= 0,6 V (0,7 V) (Si)
V
BE
= 0,2 V (0,3 V) (Ge)
V
CE
e (V
CC
V
CC
)
BJT loi PNP:
V
EB
= 0,6 V (0,7 V) (Si)
V
EB
= 0,2 V (0,3 V) (Ge)
V
EC
e (V
CC
V
CC
)
4.6.1. Dng hai ngun ring
Xt mch nh hnh 4.11, dng BJT mc kiu CE, ngun V
BB
phn cc thun mi ni
BE. Ngun V
CC
kt hp vi V
BB
phn cc nghch mi ni BC. Mch trn c thit
k sn, by gi ta tnh ton I
B
, I
C
, V
CE
xc nh im lm vic trng thi tnh ca
BJT theo thit k.
70
Ta c: I
B
=
B
BE BB
R
V V
(4.13)
I
B
= 60
50
6 , 0 6 , 3
=
k
(A)
I
C
= |I
B
(4.14)
I
C
= 80 . 60 = 4800 (A) = 4,8 mA
V
CE
= V
CC
- I
C
.R
C
(4.15)
V
CE
= 18 4,8. 2k = 18 9,6 = 8,4 (V)
im phn cc Q trn c tuyn ng ra c xc nh bi ba i lng I
B
, I
C
, V
CE
,
hay im phn cc Q c ta I
B
, I
C
, V
CE
. im phn cc Q cn gi l im hot ng
tnh (quiesent operating point) hay im lm vic trng thi tnh.
V
CC
= 18 V
V
BB
= 3,6 V
V
BE
= 0,6 V
= 80
R
B
= 50 k
R
C
= 2 k

Hnh 4.11. Mch phn cc BJT dng dng hai ngun c cc E ni mass.

Hnh 4.12. im Q trn c tuyn ng ra ca BJT.
Gi s BJT c c tuyn ng ra nh hnh 4.12 . im trn c tuyn ng ra Q c ta
I
B
= 60 A; I
C
= 4,8 mA; V
CE
= 8,4 V l im phn cc. Hay vit dng khc Q(V
CE
;
I
C
)
Ta im phn cc Q:
I
C
(mA)
Q
I
B
= 112 A
I
B
= 30 A
I
B
= 60 A
I
B
= 0 A

V
CE
(V)
I
B
= 90 A
0

8,4
18
4,8
9,0
V
BB

V
CC

R
C

R
B

71
Q
=
=
=
C C CC CE
B C
B
BE BB
B
R I V V
I I
R
V V
I
(4.16)
ng ti tnh (static load line)
i vi R
C
khng i th I
C
thay i ph thuc hiu in th V
CE
theo dng biu thc:

C
CE CC
C
R
V V
I

= (4.17)
thy r phng trnh dng ton hc c I
C
l hm s, V
CE
l bin s ta c th vit
li biu thc trn nh sau:

C
CC
C
CE
C
R
V
R
V
I +
= (4.18)
Biu thc (4.18) chnh l phng trnh ng ti tnh.
9 0,5V
2k
18
2k
V
R
V
R
V
I
CE
CE
C
CC
C
CE
C
+ = +
= +
=
I
C
= -0,5V
CE
+ 9 (mA): Phng trnh ng ti tnh.
Theo phng trnh ng ti tnh, ta thy n c dng ng thng (phng trnh bc
nht y = ax+b). Mun v ng thng, ta phi tm hai im c bit.
im nm trn trc bin s V
CE
c gi tr hm I
C
= 0
I
C
= 0 V
CE
= V
CC
= 18 V A(18 V; 0)
im nm trn trc hm s I
C
c gi tr bin s V
CE
= 0
V
CE
= 0 I
C
=
C
CC
R
V
=
k 2
18
= 9 (mA) B(0; 9 mA)
Vy ng ti tnh l mt ng thng qua hai im A, B v d nhin ng thng
ny qua im Q.
ngha: ng ti tnh l qu tch im phn cc Q. Khi phn cc mnh hn th
im Q chy ln pha trn. Khi phn cc yu hn th im Q chy xung pha di.
Khi BJT lm nhim v khuch i tn hiu bin nh th phn cc sao cho im Q
nm khong gia ng ti tnh l thch hp.
in th ti cc cc ca BJT:
V
E
= 0 V
V
B
= V
E
+V
BE
= 0,6 V (4.19)
V
C
= V
CC
I
C
R
C
= 18 4,8 .2 k = 18 9,6 = 8,4 (V)
72
Trng hp c thm in tr R
E

Ta im phn cc:
Q
+ =
=
+
=
) R (R I V V
I I
R R
V V
I
E C C CC CE
B C
E B
BE BB
B
(4.20)

Phng trnh ng ti tnh:
E C
CC
E C
CE
C
R R
V
R R
V
I
+
+
+
= (4.21)
V
E
= I
E
.R
E
(4.22a)
V
B
= V
E
+ V
BE
(4.22b)
V
C
= V
CC
I
C
.R
C
(4.22c)
4.6.2. Dng mt ngun duy nht
a. Dng in tr gim p R
B
Ta im phn cc:

Q
+ =
=
+
=
) R (R I V V
I I
R R
V V
I
E C C CC CE
B C
E B
BE CC
B
(4.23)

Hnh 4.14. Mch phn cc BJT dng dng in tr gim p R
B
.
E C
CC
E C
CE
C
R R
V
R R
V
I
+
+
+
= (4.24)
V
E
= I
E
.R
E
(4.25a)
V
B
= V
E
+ V
BE
(4.25b)
V
C
= V
CC
I
C
.R
C
(4.25c)
b. Dng in tr hi tip p R
B

V
CC

R
C

R
E

R
B

V
CC

R
C

R
E

R
B

V
BB

Hnh 4.13. Mch phn cc BJT dng dng hai ngun c R
E
.
73
Ta im phn cc:

Q
+ =
=
+ +

=
) R (R I V V
I I
) R (R R
V V
I
E C C CC CE
B C
E C B
BE CC
B
(4.26)

Hnh 4.15. Mch phn cc BJT dng dng in tr hi tip p R
B
.
E C
CC
E C
CE
C
R R
V
R R
V
I
+
+
+
= (4.27)
V
E
= I
E
.R
E
(4.28a)
V
B
= V
E
+ V
BE
(4.28b)
V
C
= V
CC
I
C
.R
C
(4.28c)
c. Dng cu phn th

Hnh 4.16. Mch phn cc BJT dng dng cu phn th.
p dng nh l Thevenin ta v mch tng ng nh hnh 4.17:

Vi ngun:

CC
B2 B1
B2
BB
V
R R
R
V
+
= (4.29)

B2 B1
B2 B1
B
R R
.R R
R
+
= (4.30)

Hnh 4.17. Mch tng ng hnh 4.16.
V
CC

R
C

R
E

R
B

R
C

R
E

V
CC

R
B1

R
B2

V
CC

R
C

R
E

R
B

(a)
74
Ta im phn cc:
Q
+ =
=
+
=
) R (R I V V
I I
R R
V V
I
E C C CC CE
B C
E B
BE BB
B
(4.31)
E C
CC
E C
CE
C
R R
V
R R
V
I
+
+
+
= (4.32)
V
E
= I
E
.R
E
(4.33a)
V
B
= V
E
+ V
BE
(4.33b)
V
C
= V
CC
I
C
.R
C
(4.33c)
Dng mt ngun phn cc BJT ta c ba dng mch nh trn. Ngoi ra, ta c th v
thm ba dng mch tng t nhng cc E ni trc tip xung mass ngha l c ba mch
phn cc mi. Khi tnh ton thit k mch ta vn dng cc cng thc trn nhng ch
no c R
E
th ta th R
E
bng 0. Trng hp ny ta lun c V
E
= 0 v cc E ni trc tip
xung mass, tnh ton n gin nhng mch hat ng khng n nh bng trng hp
c R
E
.
4.7. Mch tng ng dng tham s h (hybrid) ca BJT
kho st mch ta cn trnh by di dng mt m hnh tng ng. M hnh ny
xut pht t h thc ton hc. i vi trng thi ng tn hiu nh ta c th xem BJT
nh mt phn t tuyn tnh, tc l phn t m quan h gia dng in v in p c
th hin bng nhng hm bc nht (trong phm vi hp ca in p v dng in, c
tuyn Volt Ampe ca BJT l nhng on thng c dc khng i). V vy, trng
thi ng tn hiu ng vo nh BJT c thay th bi mng bn cc tuyn tnh nh hnh
4.18. Vi in p v dng in ng vo l V
1
, I
1
hoc V
i
, I
i
; in p v dng in ng
vo l V
2
, I
2
hoc V
0
, I
0
.

Hnh 4.18. Mng bn cc tng ng ca BJT.
Chn I
1
, V
2
lm hai bin c lp v V
1
, I
2
l hm ca chng, ta c:
I
1
I
2
V
1
V
2
75
V
1
= f(I
1
, V
2
) (4.34a)
I
2
= f(I
1
, V
2
) (4.34b)
Ly vi phn ton phn, ta c:

2
2
2
1
1
2
2
2
2
1
1
1
1
1
dV
V
I
dI
I
I
dI
dV
V
V
dI
I
V
dV
c
c
+
c
c
=
c
c
+
c
c
=
(4.35)
Cc i lng bin thin dV
1
, dV
2
, dI
1
, dI
2
c k hiu bng cc ch thng v
1
, v
2
,
i
1
, i
2
(l in p v dng in xoay chiu do ngun tn hiu xoay chiu gy ra trn cc cc
ca BJT). H phng trnh tr thnh:
v
1
= h
11
i
1
+ h
12
v
2
(4.36a)
i
2
= h
21
i
1
+ h
22
v
2
(4.36b)
Vi

0
2
2
22
f
1
2
21
r
2
1
12
i
1
1
11
h
V
I
h
h
I
I
h
h
V
V
h
h
I
V
h
=
c
c
=
=
c
c
=
=
c
c
=
=
c
c
=
(4.37)
H phng trnh (4.36a, 4.36b) l h phng trnh c bn dng tham s h. N din t
quan h gia dng v p trn ng vo v ng ra ca mng bn cc. N gin tip phn
nh mi quan h tim n bn trong ca BJT khi lm vic trng thi ng tn hiu nh.
ngha cc tham s:

0 v
i
i
0 v
1
1
11 i
0 2
i
v
i
v
h h
= =
= = = (4.38)
h
i
l tng tr vo ca BJT khi in p xoay chiu ng ra b ngn mch.

0 v
i
0
0 v
1
2
21 f
0 2
i
i
i
i
h h
= =
= = = (4.39)
h
f
l h s khuch i dng ( li dng) ca BJT khi ng ra b ngn mch i vi tn
hiu xoay chiu.

0 i
0
0
0 i
2
2
22 0
i 1
v
i
v
i
h h
= =
= = = (4.40)
76
h
0
l tng dn ra (in dn ra) (dn np ra) ca BJT khi dng xoay chiu ng vo b
h mch.

0 i
0
i
0 i
2
1
12 r
i 1
v
v
v
v
h h
= =
= = = (4.41)
h
r
l h s hi tip in p ca BJT khi h mch ng vo i vi tn hiu xoay chiu.
Nh vy, phm cht, tnh nng ca BJT th hin qua gi tr cc tham s h
ij
ca n.
Cc h
ij
c gi l tham s xoay chiu (tham s vi phn) ca BJT.
Ngoi ra, ta c th dng tham s h dn

0 v
i
0
0 v
1
2
m
0 2
v
i
v
i
g
= =
= = (4.42)
G
m
cho bit nh hng ca in p vo i vi dng ra

i
f
11
21
m
h
h
h
h
g = =
(4.43)

p dng cho mch CE:

ie
fe
m
h
h
g =
hay h
fe
= g
m
h
ie
(4.44)
Ngoi h tham s h, ta c th dng cc tham s z, tham s y.
Qu trnh thit lp h phng trnh c bn i vi cc tham s ny vn tng t nh
trn (ch khc cch chn bin v hm). ngha tng tham s z
ij
, y
ij
c suy lun mt
cch tng t nhng y khng xt.
V mt ton hc, cc tham s xoay chiu gii thiu trn y thc cht l nhng o
hm ring biu th cho dc (hoc nghch o dc) ca nhng c tuyn tnh tng
ng. Cc tham s ny ch c ngha khi BJT lm vic vi tn hiu nh.
Mch tng ng dng tham s h (hybrid) ca BJT:

Hnh 4.19. M hnh tng ng ca BJT i vi tn hiu xoay chiu bin nh, tn s thp.

r
e

h
re
V
ce
B C
E
h
fe
i
b
1/h
o
e
i
b

r
b

h
ie

h
re
V
ce
B C
E
h
fe
i
b
1/h
oe
77

Hnh 4.20. M hnh tng ng dng tham s h (hybrid) ca BJT mc kiu CE.
Vi r
b
l in tr nn, in tr ny ph thuc vo nng tp cht vng nn.
gim r
b
nng tp cht vng nn phi cao nhng iu ny nh hng bt li n hiu
sut cc pht.
r
e
l in tr ng gia B v E khi mi ni P N gia B v E c phn cc thun.
Nu xem dng i
b
chy khp mch ng vo th phi th r
e
= r
e
.
Th h
ie
= r
b
+ r
e
(4.45)
h
re
v
ce
: ngun in p ny th hin nh hng ca ng ra i vi ng vo, tc l th hin
s truyn in p theo chiu ngc (hin tng hi tip ni b ca BJT). Thc t, cc BJT
thng c h
12
(h
r
) rt b (c 10
-3
10
-4
) nn b qua h
re
v
ce
.
Gia C v E c ngun dng h
fe
.i
b
. h
22
(h
0
) thng rt b ngha l
0
h
1
rt ln nn c th
b qua nhnh
0
h
1

Nh vy, ta c m hnh n gin nh hnh 4.21.

Hnh 4.21. M hnh tng ng dng tham s h dng n gin nht ca BJT mc kiu CE.
V d:
V mch tng ng dng tham s h (hybrid) ca mch khuch i nh hnh 4.22.

Hnh 4.22. Mch khuch i dng BJT mc kiu CE.
Mch tng ng dng tham s h (hybrid) ca mch hnh 4.22:
h
ie
B
C
E
h
fe
i
b
C2
C1
+V
CC

R
B

R
C

R
E

V
i

V
o

78

Hnh 4.23. Mch tng ng dng tham s h (hybrid) ca mch hnh 4.22.
Lu : M hnh tng ng dng tham s h (hybrid) ca BJT trn ch ng khi
BJT lm vic vi tn hiu xoay chiu bin nh, tn s thp hoc trung bnh. Khi lm
vic tn s cao mch tng ng v phc tp hn, c thm vi tham s nh hng m
hnh. M hnh ny gi l m hnh hn hp ( Hybrid Pi mode).

Hnh 4.24. Mt ct ngang ca BJT loi NPN.

Hnh 4.25. M hnh hn hp ca BJT.
Vi:
r
bb
= r
b
l in tr nn, in tr ny ph thuc vo nng tp cht vng nn.
r
be
= r
e
: l in tr ng gia B v E khi mi ni P N gia B v E c phn
cc thun.
c
be
: in dung tip xc ca mi ni BE (t lin cc)
c
: in dung khuch tn.

h
ie
h
fe
i
b
R
B
R
C

R
E

(h
fe
+1)i
b

i
b
V
o

V
i

B E C
E
B
C
P-si
Substrate
E
h
fe
i
b
r
bb

C
bc

r
bc

r
ee

r
ce

C
S

r
cc

C
be

r
be

C

E
B C
79
r
bc
: l in tr ng ca mi ni P N gia B v C phn cc nghch nn r
bc
rt
ln.
c
bc
in dung tip xc ca mi ni BC.
h
fe
i
b
: ngun dng.
r
ce
: in tr ra. in tr ny cng cao cng tt m bo dng in ca BJT
ch c iu khin bng tn hiu vo.
c
s
: in dung gia vng thu c pha tp cht v .
r
cc
: in tr vng thu c pha tp cht t gn vng nn v pha nhiu xa
vng nn m bo gi tr r
cc
nh.
r
ee
: in tr vng pht, r
cc
: in tr ny ph thuc nng tp cht vng pht v
linh ng ca cc ht dn.
n gin ta b qua nhiu tham s v m hnh n gin nh hnh 4.26.

Hnh 4.26. M hnh hn hp dng n gin.
Ngun dng h
fe
i
b
cn c thay th tng ng l g
m
v
be
.
4.8. Phn loi - ng dng
Ta c th da vo cu to hay da vo ng dng phn loi:
Da vo cu to ta c hai loi:
- BJT loi NPN, c ch to t bn dn chnh l Si hoc Ge.
- BJT loi PNP, c ch to t bn dn chnh l Si hoc Ge.
Da vo ng dng:
- BJT lm vic tn s thp.
- BJT lm vic tn s cao.
- BJT c tn s ct thp.
- BJT c tn s ct cao.
- BJT cng sut nh, tn s thp.
- BJT cng sut nh, tn s trung bnh.
- BJT cng sut nh, tn s cao.
- BJT cng sut trung bnh, tn s thp.
- BJT cng sut trung bnh, tn s trung bnh.
- BJT cng sut trung bnh, tn s cao.
r
be
B
C
E
h
fe
i
b C

80
- BJT cng sut cao, tn s thp.
- BJT cng sut cao, tn s trung bnh.
- BJT cng sut cao, tn s cao.
- BJT s l loi BJT c kt hp thm cc in tr bn trong n.
- BJT xut ngang trong TV v monitor vi tnh (s ngang).
- BJT dn (gn b mt) (BJT chip).
- BJT Darlington
Khi dng BJT, ta cn bit mt s thng s ca BJT: I
Cmax
, I
Bmax
, in p nh thng,
cng sut cc i cho php, h s khuch i dng, tn s ct, loi BJT,, nhng thng
s ny d dng bit c khi tm hiu, tra cu BJT.

Hnh 4.27. Hnh dng v s chn ca mt s loi BJT.
BJT c chc nng c bit l khuch i tn hiu nn n c dng lm phn t trong
nhiu dng mch khuch i; BJT c dng lm nhng mch: n p, dao ng,
kha,; n c tch hp theo mt s nht nh c nhng IC (Integrated Circuit)
chuyn dng:

Hnh 4.28. Hnh dng v s chn ca mt s loi IC.
V l cc C
81
CU HI V BI TP
1. BJT l g? C my loi? K tn v v k hiu tng ng ca BJT.
2. iu kin BJT dn in l g? Nu nguyn l hot ng ca BJT.
3. BJT c my cch mc c bn? Nu cch nhn dng kiu mc ca BJT.
4. Thit lp h thc lin h gia cc dng in ca BJT.
5. Nu cch kho st c tuyn ca BJT, v dng c tuyn ca BJT.
6. Phn cc BJT l g? C nhng dng phn cc no? K tn v v dng mch tng
ng. ng vi mi mch hy thit lp cng thc xc nh ta im phn cc Q, in
th ti cc cc ca BJT. ng ti tnh l g? Vit phng trnh ng ti tnh. V
ng ti tnh. Xc nh im Q trn ng ti tnh. Khi phn cc mnh hay yu th Q
dch chuyn theo hng no? Ti sao?
7. Nu cch n nh nhit cho BJT.
8. V mch tng ng dng tham s h (hybrid) ca BJT. Nu ngha ca cc
tham s trong m hnh tng ng. Kim chng nhng c tnh ca cc mch khuch
i dng BJT mc kiu CE, CB, CC.
9. Cho mch nh hnh 4.11. Vi V
CC
= 12 V; V
BB
= 3 V; V
BE
= 0,6 V; = 100; R
B
=
120 k; R
C
= 3 k.
a. y l mch g?
b. Xc nh ta im phn cc Q.
c. Vit phng trnh ng ti tnh. V ng ti tnh. Xc nh im Q trn
ng ti tnh.
d. Cho bit in th ti cc cc ca BJT.
CC
= 18 V; V
BB
= 3,6 V; V
BE
= 0,6 V; = 80; R
B

= 50 k; R
C
= 2 k.
a. y l mch g?
ng ti tnh.
CC
= 12 V; V
BB
= 3 V; V
BE
= 0,6 V; = 100; R
B
=
70 k; R
C
= 2,5 k; R
E
= 0,5 k.
a. y l mch g?
ng ti tnh.
CC
= 18 V; V
BB
= 3,6 V; V
BE
= 0,6 V; = 80; R
B

= 10 k; R
C
= 1,5 k; R
E
= 0,5 k.
a. y l mch g?
82
ng ti tnh.
CC
= 12 V; V
BE
= 0,6 V; = 100; R
B
= 520 k; R
C

= 2,5 k; R
E
= 0,5 k.
a. y l mch g?
ng ti tnh.
CC
= 12 V; V
BE
= 0,6 V; = 100; R
B
= 570 k; R
C

= 3 k; R
E
= 0 k (cc E ni trc tip xung mass).
a. Hy v dng mch. y l mch g?
ng ti tnh.
CC
= 12 V; V
BE
= 0,6 V; = 100; R
B
= 270 k; R
C

= 2,5 k; R
E
= 0,5 k.
a. y l mch g?
ng ti tnh.
CC
= 12 V; V
BE
= 0,6 V; = 100; R
B
= 270 k; R
C

= 3k; R
E
= 0 k (cc E ni trc tip xung mass).
a. Hy v dng mch. y l mch g?
ng ti tnh.
CC
= 12 V; V
BE
= 0,6 V; = 100; R
B1
= 56 k; R
B2

= 10 k; R
C
= 2,5 k; R
E
= 0,5 k.
a. y l mch g?
ng ti tnh.
83
CC
= 18 V; V
BE
= 0,6 V; = 80; R
B1
= 48 k; R
B2
=
12 k; R
C
= 1,5 k; R
E
= 0,5 k.
a. y l mch g?
ng ti tnh.
19. Cho mch phn cc BJT dng dng cu phn th. Vi V
CC
= 12 V; V
BE
= 0,6 V;
= 100; R
B1
= 10 k; R
B2
= 56 k; R
C
= 2,5 k; R
E
= 0,5 k.
a. Hy v dng mch (lu : phi chn R
B1
, R
B2
v tr thch hp).
ng ti tnh.
20. Cho mch phn cc BJT dng dng cu phn th. Vi V
CC
= 18 V; V
BE
= 0,6 V;
= 80; R
B1
= 12 k; R
B2
= 48 k; R
C
= 1,5 k; R
E
= 0,5 k.
a. Hy v dng mch (lu : phi chn R
B1
, R
B2
v tr thch hp).
ng ti tnh.
21. Cho mch phn cc BJT dng dng in tr hi tip p R
B
. Vi V
CC
= 12 V; V
BE

= 0,6 V; = 100; R
B
= 270 k; R
C
= 2,5 k; R
E
= 0,5 k.
a. Hy v dng mch.
ng ti tnh.
22. Cho mch phn cc BJT dng dng in tr gim p R
B
. Vi V
CC
= 12 V; V
BE
=
0,6 V; = 100; R
B
= 520 k; R
C
= 2,5 k; R
E
= 0,5 k.
a. Hy v dng mch.
ng ti tnh.
23. Cho mch phn cc BJT dng dng in tr hi tip p R
B
; cc E ni trc tip
xung mass. Vi V
CC
= 12 V; V
BE
= 0,6 V; = 100; R
B
= 270 k; R
C
= 3 k.
a. Hy v dng mch.
84
ng ti tnh.
24. Cho mch phn cc BJT dng dng in tr gim p R
B
; cc E ni trc tip
xung mass. Vi V
CC
= 12 V; V
BE
= 0,6 V; = 100; R
B
= 570 k; R
C
= 3 k.
a. Hy v dng mch.
ng ti tnh.
25. Cho mch phn cc BJT dng dng hai ngun. Vi V
CC
= 12 V; V
BE
= 3 V; V
BE
=
0,6 V; = 100; R
B
= 70 k; R
C
= 2,5 k; R
E
= 0,5 k.
a. Hy v dng mch.
ng ti tnh.
26. Cho mch phn cc BJT dng dng hai ngun. Vi V
CC
= 18 V; V
BE
= 3,6 V; V
BE

= 0,6 V; = 80; R
B
= 10 k; R
C
= 1,5 k; R
E
= 0,5 k.
a. Hy v dng mch.
ng ti tnh.
27. Cho mch phn cc BJT dng dng hai ngun, cc E ni trc tip xung mass.
Vi V
CC
= 12 V; V
BB
= 3 V; V
BE
= 0,6 V; = 100; R
B
= 120 k; R
C
= 3 k.
a. Hy v dng mch.
ng ti tnh.
28. Cho mch phn cc BJT dng dng hai ngun, cc E ni trc tip xung mass.
Vi V
CC
= 18 V; V
BE
= 3,6 V; V
BE
= 0,6 V; = 80; R
B
= 50 k; R
C
= 2 k.
a. Hy v dng mch.
ng ti tnh.
29. Cho mch nh hnh 4.14. V
CC
= 12 V; V
E
= 1 V; V
BE
= 0,6 V; = 100. Mch c
im phn cc Q(6 V; 2 mA).
85
a. Xc nh tr s cc in tr.
b. Xc nh im Q trn ng ti tnh.
c. Cho bit in th ti cc cc ca BJT.
CC
= 12 V; V
E
= 0 V; V
BE
= 0,6 V; = 100. Mch c
31. Cho mch nh hnh 4. 15. V
CC
= 12 V; V
E
= 1 V; V
BE
= 0,6 V; = 100. Mch c
32. Cho mch nh hnh 4. 15. V
CC
= 12 V; V
E
= 0 V; V
BE
= 0,6 V; = 100. Mch c
CC
= 12 V; V
B
= 1,6 V; V
BE
= 0,6 V; = 100. Mch c
CC
= 12 V; V
C
= 7 V; V
BE
= 0,6 V; = 100. Mch c
CC
= 12 V; V
B
= 1,6 V; V
BE
= 0,6 V; = 100. Mch c
CC
= 12 V; V
C
= 7 V; V
BE
= 0,6 V; = 100. Mch c
CC
= 12 V; V
BE
= 0,6 V; = 100. Mch c im phn
cc Q(6 V; 2 mA). Chn R
E
= 0,5 k.
86
CC
= 12 V; V
BE
= 0,6 V; = 100. Mch c im phn
E
= 0,5 k.
CC
= 12 V; V
BE
= 0,6 V; = 100. Mch c im phn
C
= 2,5 k.
CC
= 12 V; V
BE
= 0,6 V; = 100. Mch c im phn
C
= 2,5 k.
41. Cho mch nh hnh 4.5.
a. y l mch g?
b. V mch tng ng dng tham s h ca mch hnh 4.5.
a. y l mch g?
a. y l mch g?
44. Cho mch nh hnh 4.22 nhng cc E c ni trc tip xung mass.
a. y l mch g?
b. V mch tng ng dng tham s h ca mch hnh 4.22 nhng cc E c
ni trc tip xung mass.
a. y l mch g?
a. y l mch g?
a. y l mch g?
a. y l mch g?
87

+V
CC

R
E

R
C

R
B2

R
B1

C
1

C
2

R
S

V
S

Hnh 4.30
+V
CC

R
C

R
E

R
S

V
S

R
L

C
2

C
1

R
B1

R
B2

C
B

Hnh 4.31
R
S

V
S

C
1

C
2

R
C

R
E
R
L

R
B1

R
B2

+ V
CC

Hnh 4.32
+V
CC

R
C

R
E

V
O

V
i

R
B

C
C
Hnh 4.29
Chng 5: Transistor hiu ng trng
88
Chng 5
TRANSISTOR HIU NG TRNG
Nh bit chng 4, BJT l Transistor mi ni lng cc c tng tr vo nh
cch mc thng thng. Dng I
C
= I
B
, mun dng I
C
cng ln ta phi tng dng I
B
(thc
dng ng vo). chng 5 s tm hiu v transistor hiu ng trng (FET Field Effect
Transistor). FET c tng tr vo ln, dng ng ra c thay i bng cch thay i in
p ng vo hay ni cch khc dng gia cc mng (cc thot) (D) v cc ngun (S)
c iu khin bi in p gia cc cng (G) v cc ngun (S).
5.1. JFET
5.1.1. Cu to k hiu
JFET (Junction Field Effect Transistor) c gi l FET ni.
JFET c cu to nh
hnh 5.1.
Trn thanh bn dn
hnh tr c in tr sut
kh ln (nng tp cht
tng i thp), y trn
v y di ln lt cho
tip xc kim loi a ra hai
cc tng ng l cc mng
(cc thot) v cc ngun.
Vng theo chu vi ca thanh bn dn ngi ta to mt mi ni P N. Kim loi tip xc
vi mu bn dn mi, a ra ngoi cc cng (ca).
D: Drain: cc mng (cc thot).
G: Gate: cc cng (cc ca).
S: Source: cc ngun.
Vng bn dn gia D v S c gi l thng l (knh). Ty theo loi bn dn gia D
v S m ta phn bit JFET thnh hai loi: JFET knh N, JFET knh P. N c k hiu nh
hnh 5.2.

P
D D
N
N
P P G
S
N G
S
(b) (a)
Hnh 5.1. Cu to ca JFET knh N (a), JFET knh P (b).
(a) (b)
Hnh 5.2. K hiu ca JFET knh N (a), JFET knh P (b).
89
Thc t, cu to ca
JFET phc tp hn. in
hnh l vi cng ngh planar
epitaxy, cu trc JFET
knh N nh hnh 5.3. Cc
cc D, G, S u ly ra t trn
b mt ca phin bn dn.
Cc vng N
+
to tip xc
khng chnh lu gia cc
mng, cc ngun vi knh dn loi N. Vng P
+
ng vai tr cc cng. Lp cch in
SiO
2
bo v b mt.
5.1.2. Nguyn l vn chuyn
Gia D v S t mt in p V
DS
to ra mt in trng c tc dng y ht ti a s
ca bn dn knh chy t S sang D hnh thnh dng in I
D
. Dng I
D
tng theo in p
V
DS
n khi t gi tr bo ha I
DSS
(saturation) v in p tng ng gi l in p tht
knh V
PO
(pinch off), tng V
DS
ln hn V
PO
th I
D
vn khng tng.
Gia G v S t mt in p V
GS
sao cho khng phn cc hoc phn cc nghch mi
ni P N. Nu khng phn cc mi ni P N ta c dng I
D
t gi tr ln nht I
DSS
. Nu
phn cc nghch mi ni P N lm cho vng tip xc thay i din tch. in p phn
cc nghch cng ln th vng tip xc (vng him) cng n rng ra, lm cho tit din ca
knh dn b thu hp li, in tr knh tng ln nn dng in qua knh I
D
gim xung v
ngc li. V
GS
tng n gi tr V
PO
th I
D
gim v 0.
5.1.3. Cc cch mc c bn ca JFET
a. JFET mc kiu cc ngun chung (Common Source CS)
Mch dng JFET mc kiu cc ngun chung (Common Source CS) nh hnh 5.4.

Hnh 5.4. JFET mc kiu cc ngun chung.
b. JFET mc kiu cc cng chung (Common Gate CG)
V
i

C
1

V
O

C
2

+Vcc
R
D
R
G R
S
N-Si
P-Si
S G D
SiO
2

Vng
ngho
N
+
N
+ P
+
Hnh 5.3. Cu trc JFET ch to theo cng ngh planar.
90
Mch dng JFET mc kiu cc cng chung (Common Gate CG) nh hnh 5.5.

Hnh 5.5. JFET mc kiu cc cng chung.
c. JFET mc kiu cc thot chung (Common Drain CD)
Mch dng JFET mc kiu cc thot chung (Common Drain CD) nh hnh 5.6.

Hnh 5.6. JFET mc kiu cc thot chung.
CS: Tn hiu vo G so vi S, tn hiu ra D so vi S.
CG: Tn hiu vo S so vi G, tn hiu ra D so vi G.
CD: Tn hiu vo G so vi D, tn hiu ra S so vi D.
5.1.4. c tuyn ca JFET
Kho st s thay i dng thot I
D

theo hiu in th V
DS
v V
GS
, t
ngi ta a ra hai dng c tuyn ca
JFET.
V
DS
l hiu in th gia cc D v
cc S.
V
GS
l hiu in th gia cc G v
cc S.
V
0

C
1

V
i

C
1

+Vcc
R
G R
S
V
i

C
1

V
O

C
2

+Vcc
R
D
R
G R
S
C
G

V
CC

V
DC

R
D

Hnh 5.7. Mch kho st c tuyn ca JFET.
91
a. c tuyn truyn dn I
D
(V
GS
) ng vi V
DS
= const.
Gi V
DS
= const, thay i V
GS
bng
cch thay i ngun V
DC
, kho st s
bin thin ca dng thot I
D
theo V
GS
. Ta
c:
2
PO
GS
DSS D
V
V
1 I I
|
|
.
|
\
|
= (5.1)
- Khi V
GS
= 0V, dng in I
D
ln
nht v t gi tr bo ha, k hiu: I
DSS
.
- Khi V
GS
m th dng I
D
gim, V
GS

cng m th dng I
D
cng gim. Khi V
GS
= V
PO
th dng I
D
= 0. V
PO
lc ny c gi l
in th tht knh (nghn knh).
b. c tuyn ng ra I
D
(V
DS
) ng vi V
GS
= const.
Gi nguyn V
GS
mt tr s khng i (nht nh). Thay i V
CC
v kho st s bin
thin ca dng thot I
D
theo V
DS
.
- Gi s chnh ngun V
DC
v 0v,
khng thay i ngun V
DC
, ta c V
GS
=
0V = const. Thay i ngun V
CC
V
DS

thay i I
D
thay i. o dng I
D
v
V
DS
. Ta thy lc u I
D
tng nhanh theo
V
DS
, sau I
D
t gi tr bo ha, I
D
khng tng mc d V
DS
c tng.
- Chnh ngun V
DC
c V
GS
= 1v.
Khng thay i ngun V
DC
, ta c V
GS
=
1V = const. Thay i ngun V
CC
V
DS

thay i I
D
thay i. o dng I
D
v
V
DS
tng ng. Ta thy lc u I
D
tng
nhanh theo V
DS
, sau I
D
t gi tr bo ha, I
D
khng tng mc d V
DS
c tng.
- Lp li tng t nh trn ta v c h c tuyn ng ra I
D
(V
DS
) ng vi V
GS
=
const.
5.1.5. Phn cc
Tng t cch tnh ton, xc nh cng thc tnh in th, dng in ca mch phn
cc BJT. Nhng c bit mch phn cc hnh 5.10, hnh 5.11 l mch phn cc JFET
dng t ng. Chn in tr R
G
ln c 1M tr ln, ta c I
G
= 0, V
G
= 0.
V
GS
= V
G
V
S
hay V
S
= -V
GS
(5.2)
V
S
= I
S
R
S
= I
D
R
S
(5.3)
V
D
= V
CC
- I
D
R
D
(5.4)
im phn cc ca JFET cn xc nh cc i lng V
GS
, I
D
, V
DS
hay Q(V
DS
; I
D
).
im phn cc Q(V
DS
; I
D
) c th dch chuyn trn ng ti tnh.
I
D

I
DSS

0
V
GS

-V
P0

Hnh 5.8. c tuyn truyn dn ca JFET.
V
GS
= 0 V
V
DS
(V)
I
D
(mA)
0

V
PO

I
DSS

V
GS
= -1 V
V
GS
= -2 V
V
GS
= -3 V
V
GS
= -4 V
Hnh 5.9. H c tuyn ng ra ca JFET.
92

Ta im phn cc Q:
Q
DS
D
GS
V
I
V
hay Q(V
DS
; I
D
) (5.5)

S D
CC
S D
DS
D
R R
V
R R
V
I
+
+
+
= (5.6)
- V ng ti tnh:
Cho V
DS
= 0
|
|
.
|
\
|
+
+
=
S D
CC
S D
CC
D
R R
V
0; A
R R
V
I
I
D
= 0 V
DS
= V
CC
B (V
CC
; 0)
ng ti tnh l ng thng ni gia hai im A, B v i qua im Q.
in th ti cc cc ca JFET:
V
G
= 0 (5.7a)

V
S
= I
S
R
S
= I
D
R
S
(5.7b)
V
D
= V
CC
- I
D
R
D
(5.7c)
V d: Cho mch nh hnh 5.10.
Vi V
CC
= 12 V
V
GS
= -2 V
R
G
= 1 MO
R
S
= 1 kO
R
D
= 2 kO
+Vcc
R
D
R
G R
S
Hnh 5.10

R
D
-Vcc

RG
R
S
Hnh 5.11
93
Mch ny c: V
G
= 0
V
S
= -V
GS
= -(-2) = 2 V = I
D
R
S

2
1k
2
R
2
I
S
D
= = = (mA)
V
D
= V
CC
- I
D
R
D
= 12 2.2 k = 8 (V)
V
DS
= V
D
V
S
= 8 2 = 6 (V)
Vy to im phn cc:
Q
=
=
=
V 6 V
mA 2 I
V 2 V
DS
D
GS
hay Q(6 V; 2 mA)
Phng trnh ng ti tnh c dng:
(mA) 4 0,33V I
1k 2k
12
1k 2k
V
R R
V
R R
V
I
DS D
DS
S D
CC
S D
DS
D
+ =
+
+
+
=
+
+
+
=

Hay I
D
= - 0,33.10
-3
V
DS
+ 4.10
-3
(A)
in th ti cc cc ca JFET:
V
G
= 0

V
S
= 2 V
V
D
= 8 V
5.2. MOSFET (Metal Oxide Semiconductor FET)
MOSFET hay cn c gi IGFET (Insulated Gate FET) l FET c cc cng cch li.
MOSFET chia lm hai loi: MOSFET knh lin tc (MOSFET loi him) v MOSFET
knh gin on (MOSFET loi tng). Mi loi c phn bit theo cht bn dn: knh N
hoc knh P.
5.2.1.MOSFET knh lin tc
a. Cu to k hiu

Hnh 5.12. Cu to k hiu MOSFET knh lin tc loi N.
+ +
S
N
Al
SiO2
N
D
G
D
Sub
G
S
N
P
94

Hnh 5.13. Cu to k hiu MOSFET knh lin tc loi P.
Gate (G): cc ca (cc cng)
Drain (D): cc thot (cc mng)
Source (S): cc ngun
Substrate (Sub): (nn)
Cu to MOSFET knh lin tc loi N
Trn nn cht bn dn loi P, ngi ta pha hai vng bn dn loi N vi nng cao
(N
+
) c ni lin vi nhau bng mt vng bn dn loi N pha nng thp (N). Trn
ph mt lp mng SiO
2
l cht cch in.
Hai vng bn dn N
+
tip xc kim loi (Al) a ra cc thot (D) v cc ngun (S).
Cc G c tip xc kim loi bn ngoi lp oxit nhng vn cch in vi knh N c
ngha l tng tr vo cc l ln.
phn bit knh (thng l) N hay P nh sn xut cho thm chn th t gi l chn
Sub, chn ny hp vi thng l to thnh mi ni P-N. Thc t, chn Sub ca MOSFET
c nh sn xut ni vi cc S bn trong MOSFET.
b. c tuyn
V
DS
l hiu in th gia cc D v cc S.
V
GS
l hiu in th gia cc G v cc S.
Xt mch nh hnh 5.14.
Khi V
GS
= 0V: in t di chuyn to dng
in I
D
, khi tng in th V
DS
th dng I
D

tng, I
D
s tng n mt tr s gii hn l I
Dsat

(dng I
D
bo ha). in th V
DS
tr s I
Dsat

c gi l in th nghn V
P0
ging nh
JFET.

+ +
S
P
Al
SiO2
P
G
D
D
Sub
G
S
P
N
I
D
+
VCC
G

D
R
D
+
V
DC

S
Hnh 5.14. Mch kho st c tuyn ca MOSFET knh lin tc loi N.
95
Khi V
GS
< 0: cc G c in th m nn y in t knh N vo vng P lm thu hp
tit din knh dn in N v dng I
D
s gim xung do in tr knh dn in tng.
Khi in th cc G cng m th dng I
D
cng nh, v n mt tr s gii hn dng
in I
D
gn nh khng cn. in th ny cc G gi l in th nghn V
P0
. c tuyn
chuyn ny tng t c tuyn chuyn ca JFET knh N.
Khi V
GS
> 0, cc G c in th dng th in t thiu s vng nn P b ht vo
knh N nn lm tng tit din knh, in tr knh b gim xung v dng I
D
tng cao hn
tr s bo ha I
Dsat
. Trng hp ny I
D
ln d lm h MOSFET nn t c dng.
Tng t JFET, ta kho st hai dng c tuyn ca MOSFET knh lin tc:
- c tuyn truyn dn I
D
(V
GS
) ng vi
V
DS
= const.
- c tuyn ng ra I
D
(V
DS
) ng vi
V
GS
= const.
Cch kho st tng t nh kho st JFET
nhng n khi cn V
GS
> 0, ta i cc ca ngun
V
DC
nhng lu ch cn ngun dng nh th I
D

tng cao. Ta c hai dng c tuyn nh hnh 5.15
v hnh 5.16:
Hnh 5.15. c tuyn truyn dn I
D
(V
GS
) ca MOSFET knh lin tc loi N.

Hnh 5.16. H c tuyn ng ra I
D
(V
DS
) ca MOSFET knh lin tc loi N.
c. Phn cc
MOSFET knh lin tc loi N thng s dng trng hp V
GS
< 0, MOSFET knh
lin tc loi P thng s dng trng hp V
GS
> 0 nn cch phn cc tng t nh
phn cc JFET.
Cch tnh cc tr s V
D
, V
S
, V
GS
, V
DS
v dng I
D
, xc nh ng ti tnh tng t
nh mch JFET.
I
D
(mA)
I
Dsat

0
V
GS
(V)

-V
P0

V
GS
= 2 V
V
DS
(V)
I
D
(mA)
0

V
PO

I
DSS

V
GS
= 1 V
V
GS
= 0 V
V
GS
= -1 V
V
GS
= -2 V
96
5.2.2. MOSFET knh gin on
a. Cu to k hiu:

Hnh 5.17. Cu to - k hiu MOSFET knh gin on loi N.

Hnh 5.18. Cu to- k hiu MOSFET knh gin on loi P.
Cc ca: Gate (G)
Cc thot: Drain (D)
Cc ngun: Source (S)
Nn ( ): Substrate (Sub)
Cu to MOSFET knh gin on loi N tng t nh cu to MOSFET knh lin
tc loi N nhng khng c sn knh N. C ngha l hai vng bn dn loi N pha nng
cao (N
+
) khng dnh lin nhau nn cn gi l MOSFET knh gin on. Mt trn knh
dn in cng c ph mt lp oxit cch in SiO
2
. Hai dy dn xuyn qua lp cch
in ni vo vng bn dn N
+
gi l cc S v D. Cc G c ly ra t kim loi tip xc
bn ngoi lp oxit SiO
2
nhng cch in vi bn trong. Cc Sub c ni vi cc S
bn trong MOSFET.
b. c tuyn
Xt mch nh hnh 5.19.

+ +
Al
P
S
SiO2
Sub
G
D
G
N
D
P
S
+
+
P
N
G D
S
N
Al
Sub
SiO2
S
G
D
97

V
DS
V
GS
Khi V
GS
= 0V, in t khng di chuyn c nn I
D
= 0, in tr gia D v S rt ln.
Khi V
GS
> 0V th in tch dng cc G s ht in t ca nn P v pha gia hai
vng bn dn N
+
v khi lc ht ln th s in t b ht nhiu hn, ni lin hai
vng bn dn N
+
v knh N ni lin hai vng bn dn N
+
hnh thnh nn c dng I
D

chy t D sang S. in th cc G cng tng th I
D
cng ln.
in th ngng V l in th V
GS
ln hnh thnh knh, thng thng V vi
volt.
Tng t JFET v MOSFET knh lin tc ta kho st hai dng c tuyn ca
MOSFET knh gin on:
- c tuyn truyn dn I
D
(V
GS
) ng vi V
DS
= const.
- c tuyn ng ra I
D
(V
DS
) ng vi V
GS
= const.
Cch kho st tng t nh kho st JFET v MOSFET knh lin tc nhng khc vi
hai trng hp trn l cn V
GS
> 0, c th ngun V
DC
phi dng V
GS
bng in
th ngng V th I
D
c gi tr khc 0. Ta c hai dng c tuyn nh hnh 5.20 v hnh
5.21:

Hnh 5.20. c tuyn truyn dn I
D
(V
GS
) ca MOSFET knh gin on loi N.
I
D
(mA)
V
GS
(V)
V
0

+
V
DC
I
D
R
D
+
V
CC
Hnh 5.19. Mch kho st c tuyn ca MOSFET knh gin on loi N.
98

Hnh 5.21. H c tuyn ng ra I
D
(V
DS
) ca MOSFET knh gin on loi N.
b. Phn cc

Hnh 5.22. Mch phn cc MOSFET knh gin on loi N.
i vi MOSFET, cc G cch in vi knh v nn P nn khng c dng I
G
i t cc
G vo MOSFET.
V
D
= V
CC
- I
D
R
D
(5.8)
V
S
= I
D
.R
S
(5.9)
CC
G2 G1
G1
G
V
R R
R
V
+
= (5.10)
V
DS
= V
CC
- I
D
(R
D
+ R
S
) (5.11)
V
GS
= V
G
-V
S
(5.12)
im phn cc ca MOSFET cn xc nh cc i lng V
GS
, I
D
, V
DS
hay Q(V
DS
;
I
D
).
im phn cc Q(V
DS
; I
D
) c th dch chuyn trn ng ti tnh.
Ta im phn cc Q:

V
GS
= 5 V
V
DS
(V)
I
D
(mA)
0

V
GS
= 4 V
V
GS
= 3 V
V
GS
= 2 V
V
GS
= 1 V
99
Q
DS
D
GS
V
I
V
hay Q(V
DS
; I
D
) (5.13)

S D
CC
S D
DS
D
R R
V
R R
V
I
+
+
+
= (5.14)
- V ng ti tnh:
Cho V
DS
= 0
|
|
.
|
\
|
+
+
=
S D
CC
S D
CC
D
R R
V
0; A
R R
V
I
I
D
= 0 V
DS
= V
CC
B (V
CC
; 0)
ng ti tnh l ng thng ni gia hai im A, B v i qua im Q.
in th ti cc cc ca MOSFET knh gin an:

CC
G2 G1
G1
G
V
R R
R
V
+
= (5.15a)

V
S
= I
S
R
S
= I
D
R
S
(5.15b)
V
D
= V
CC
- I
D
R
D
(5.15c)
5.2.3. Cc cch mc c bn ca MOSFET
Tng t JFET, MOSFET cng c ba kiu mc c bn:
- Cc ngun chung (Common Source CS)
CS: Tn hiu vo G so vi S, tn hiu ra D so vi S.
- Cc cng chung (Common Gate CG)
CB: Tn hiu vo S so vi G, tn hiu ra D so vi G.
- Cc thot chung (Common Drain CD)
CC: Tn hiu vo G so vi D , tn hiu ra S so vi D.
5.3. M hnh tng ng ca FET i vi tn hiu nh - tn s thp
M hnh tng ng ca FET i vi tn hiu xoay chiu bin nh, tn s thp
nh hnh 5.23 dng dng ngun dng, hnh 5.24 dng dng ngun p. i vi tn hiu c
tn s cao ta phi xt nh hng ca cc t lin cc c
gs
, c
ds
, c
gd
.

Hnh 5.23. M hnh tng ng ca FET dng ngun dng .
v
ds
v
gs
G
i
d
S
g
m
v
gs
r
d
D
100

Hnh 5.24. M hnh tng ng ca FET dng ngun p.
Vi:
v
ds
v
gs
g
m
: h dn ( xuyn dn).

const V
GS
D
m
DS
V
I
g
=
c
c
= (5.16)
r
d
: in tr knh dn (in tr vi phn ng ra).

const V
D
DS
d
GS
I
V
r
=
c
c
= (5.17)
r
i
: in tr vo (in tr vi phn ng vo), r
i
rt ln coi nh h gia G v S.

const V
D
GS
i
DS
I
V
r
=
c
c
= (5.18)
: h s khuch i p. H s ny so snh mc nh hng ca in p V
GS

v V
DS
i vi dng thot.

const I
GS
DS
D
V
V
=
c
c
= (5.19)
v g
m
lin h vi nhau bi biu thc:
= g
m
r
d
(5.20)
5.4. ng dng
Nh trnh by trn, FET c hai loi JFET v MOSFET u hot ng da trn
s iu khin dn in ca mu bn dn bi mt in trng ngoi, ch dng mt loi
ht dn (ht ti a s), n thuc loi n cc tnh (unipolar), khng c qu trnh pht sinh
v ti hp ca hai loi ht dn nn cc tham s ca FET t b nh hng bi nhit .
Nhng u im ni bt ca FET: tng tr vo ln, h s khuch i cao, tiu th nng
lng b, kch thc cc in cc D, G, S c th gim xung rt b, thu nh th tch ca
FET mt cch ng k v n c ng dng nhiu trong ch to IC m c bit l loi IC
c mt tch hp cao. Cng nh BJT, FET c ng dng nhiu trong c hai dng
v
ds
G
S
v
gs
i
d
v
gs
r
d
D
101
mch s v tng t. N lm mt phn t trong nhiu dng mch khuch i, lm
chuyn mch in t.Ngoi ra, h FET cn c cc dng sau: CMOS, V-MOS, D-
MOS, FeFET,y l nhng dng c ci tin t MOSFET c thm u im trong
ng dng.

Hnh 5.25. Hnh dng ca mt s loi FET.

S G D
S
D
G
G S
D
S
D
G
G

D
S
102
CU HI V BI TP

1. FET l g? C my loi? K tn v v k hiu tng ng ca FET.
2. iu kin FET dn in l g? Nu nguyn l hat ng ca FET.
3. FET c my cch mc c bn? Nu cch nhn dng kiu mc ca FET.
4. Nu cch kho st c tuyn ca FET, v dng c tuyn ca FET.
5. V mch phn cc JFET dng t ng? ng vi mi mch hy thit lp cng thc
xc nh ta im phn cc Q, in th ti cc cc ca FET. ng ti tnh l g?
Vit phng trnh ng ti tnh. V ng ti tnh. Xc nh im Q trn ng ti
tnh.
6. V mch phn cc MOSFET knh gin on dng dng cu phn th? ng vi
mi mch hy thit lp cng thc xc nh ta im phn cc Q, in th ti cc cc
ca MOSFET knh gin on. ng ti tnh l g? Vit phng trnh ng ti tnh. V
ng ti tnh. Xc nh im Q trn ng ti tnh.
7. V m hnh tng ng ca FET i vi tn hiu xoay chiu bin nh, tn s
thp. Nu ngha ca cc tham s trong m hnh tng ng.
Vi V
CC
= 12 V
V
GS
= -2 V
R
G
= 1 MO
R
S
= 1 kO
R
D
= 2,5 kO
a. Xc nh ta im phn cc Q.
b. Vit phng trnh ng ti tnh. Xc nh im Q trn ng ti tnh.
c. Cho bit in th ti cc cc ca JFET.
Vi V
CC
= 12 V
R
G1
= 5 kO
R
G2
= 10 kO
R
S
= 0 O
R
D
= 1,5 kO
I
D
= 4 mA
a. Xc nh ta im phn cc Q.
b. Vit phng trnh ng ti tnh. Xc nh im Q trn ng ti tnh.
c. Cho bit in th ti cc cc ca MOSFET.
103
10. Cho mch phn cc JFET knh N dng t ng.
Vi V
CC
= 12 V
V
GS
= -2 V
R
G
= 1 MO
R
S
= 1 kO
R
D
= 2,5 kO
a. Hy v dng mch.
c. Vit phng trnh ng ti tnh. Xc nh im Q trn ng ti tnh.
d. Cho bit in th ti cc cc ca JFET.

Chng 6: Linh kin c vng in tr m
104
Chng 6
LINH KIN C VNG IN TR M
Trong chng trc gii thiu cc linh kin in t bn dn nh diode, transistor
mi ni lng cc, transistor hiu ng trng, chng ny cng gii thiu v linh kin
in t bn dn nhng trong c tuyn ca n c vng I tng trong khi V gim,
chnh l vng in tr m.
6.1. UJT
6.1.1. Cu to k hiu

Hnh 6.1. Cu to (a), k hiu (b) ca UJT.
Transistor n ni gm mt nn l thanh bn dn loi N pha nng rt thp. Hai
cc kim loi ni vo hai u thanh bn dn loi N gi l cc nn B
1
v B
2
. Mt dy
nhm nh c ng knh nh c 0,1 mm c khuch tn vo thanh N to thnh mt
vng cht P c mt rt cao, hnh thnh mi ni P-N gia dy nhm v thanh bn dn,
dy nhm ni chn ra gi l cc pht E.
UJT Uni Junction Transistor l transistor n ni.
B
1
: Base 1: cc nn 1.
B
2
: Base 2: cc nn 2.
E: Emitter: cc pht.
Transistor n ni c th v
mch tng ng gm 2 in tr
R
B1
v R
B2
ni t cc B
1
n cc B
2

gi chung l in tr lin nn R
BB

v mt diode ni t cc E vo thanh
bn dn im B.
Ta c :
R
BB
= R
B1
+ R
B2
(6.1)

E
B
2

B
1

Nhm
N
(a)
B
2

B
1

E
(b)
Hnh 6.2. Mch tng ng vi cu to ca UJT.
105
im B thng gn cc B
2
hn nn R
B1
> R
B2
. Mi transistor n ni c t s in
tr khc nhau gi l q.
q =
BB
B1
R
R
; (q =0,5 0,8) (6.2)
6.1.2. c tuyn
Xt mch nh hnh 6.3.
R
BB
c tr s t vi kO n 10 kO, ta c:
V
B
~
BB
B1
R
R
.V
CC
(6.3)
V
B
= q.V
CC
> 0
(V R
1
, R
2
<< R
CC
)
Dng I
B
: I
B
=
2 1 BB
CC
R R R
V
+ +
~
BB
CC
R
V
(6.4)
I
B
khong vi mA v R
BB
ln.
Khi chnh ngun V
DC
v 0, ta c V
E
= 0, V
E
< V
B
nn diode EB b phn cc nghch v
c dng in r i t B E, dng in r c tr s rt nh.
Khi chnh ngun V
DC
tng sao cho in th 0 < V
E
< V
B
th dng in r gim dn v
khi V
E
= V
B
th dng I
E
= 0.
Tip tc tng V
DC
sao cho V
B
< V
E
< V
B
+ V th diode EB c phn cc thun
nhng dng khng ng k. n khi V
E
= V
P
= V
B
+V th diode EB c phn cc thun
nn dn in v dng I
E
tng ln cao, chiu I
E
t E B. V
P
= V
B
+V: c gi l in
th nh.
Do vng bn dn P ca diode EB c mt rt cao, khi diode EB c phn cc
thun, l trng t P dn sang thanh bn dn N, ko in t t cc m ca ngun V
BB

vo cc nn B
1
ti hp vi l trng. Lc ht ti trong thanh bn dn N tng cao t
ngt lm cho in tr R
B1
gim xung v V
B
cng b gim xung ko theo V
E
gim
xung trong khi dng I
E
c tng cao.
Trn c tuyn I
E
(V
E
) c khong in th V
E
b gim trong khi dng in I
E
li tng
nn ngi ta gi y l vng in tr m.
Khi R
B1
gim th in tr lin nn R
BB
cng b gim v dng I
B
tng ln gn bng hai
ln tr s ban u v by gi in tr lin nn xem nh R
BB
~ R
B2
v I
B
=
B2
CC
R
V
.
Hnh 6.3. Mch kho st c tuyn ca UJT.

106
Dng in I
E
tip tc tng v in th V
E

gim n mt tr s thp nht l in th thung
lng V
V
(valley) th dng in I
E
v V
E
s tng
ln nh c tuyn ca mt diode thng thng.
Vng ny gi l vng bo ha.
Trn hnh 6.4 c im P(V
P
; I
P
) l im
nh; im V(V
V
; I
V
) l im trng (thung
lng); on PV l vng in tr m, xy ra rt
nhanh.

6.1.3. Cc thng s
Transistor n ni c cc thng s k thut quan trng cn bit khi s dng v tnh
ton l:
a. in tr lin nn R
BB

L tr s in tr gia hai cc nn B
1
v B
2
khi cc E h. Tr s R
BB
khong vi
kO n 10 kO.
R
BB
= R
B1
+ R
B2
(6.5)
b. T s q
Theo nh ngha q =
BB
B1
R
R
, thng thng q = (0,5 0,8). T gi tr ca q c th tnh
c in th ti im B gia hai in tr R
B1
v R
B2
theo cng thc:
V
B

CC
BB
B1
.V
R
R
= qV
CC
(6.6)
c. in th nh V
P

in th nh V
P
l in th ti thiu phn cc thun diode EB khi hai cc nn B
1
,
B
2
ni vo ngun V
CC

V
P
= V
B
+V = qV
CC
+V (6.7)
d. Dng in nh I
P

Dng in nh I
P
l dng in I
E
ng vi V
E
l in th nh V
P
. Dng I
P
thng c
tr s nh khong vi chc A.
e. in th thung lng V
V

L in th cc pht V
E
gim xung thp nht sau khi phn cc thun diode EB. in
th V
V
c tr s khong vi volt.
Vng in tr m
I
E

I
V

I
p

V
P
V
B
V
V

Vng bo ha
V
E

P
V
0
Hnh 6.4. c tuyn ca UJT.
107
f. Dng in thung lng I
V
:
Dng in thung lng I
V
l dng in I
E
ng vi V
E
l in th thung lng V
V
.
Thng dng in I
V
c tr s rt ln so vi I
P
. (I
V
khong vi mA tr ln).
g. Cng sut tiu tn P
pmax
:
l cng sut nhit ln nht m UJT c th chu c khi c dng in i qua, ln hn
tr s ny UJT s b h.
6.1. 4. ng dng
Do UJT c tnh cht c bit l khi V
E
< V
P
th dng I
E
= 0 v dng I
B
rt nh, nhng
khi V
E
= V
P
th dng I
E
tng cao t ngt v dng I
B
cng tng ln khong gp i nn
UJT thng c dng trong cc
mch to xung.
Mch nh hnh 6.5 dng UJT c
in tr R
BB
= 10 k; = 0,6;

R
1
, R
2

nhn tn hiu xung ra (R
2
cn c
tc dng n nh nhit cho in th
nh V
P
), t in C v bin tr VR
l mch np to in th tng
dn cho cc E. Khi thay i tr s
in tr VR l thay i hng s thi
gian np - x ca t.
Ta c :
R
B1
= qR
BB
(6.8)
R
B1
= 0,6. 10 k = 6 k
R
B2
= R
BB
R
B1
(6.9)
R
B2
=10 k 6 k = 4 k
Khi mi cp in th t C coi nh ni tt nn V
E
= 0 V. Lc diode EB b phn cc
ngc nn ch c dng I
B
i t ngun V
CC
xung mass.
Dng I
B
=
2 B2 B1 P
CC
R R R R
V
+ + +
(6.10)
I
B
=
2 BB 1
CC
R R R
V
+ +
=
200 k 10 100
10
+ +
~1 (mA)
in th cc cc nn:
V
B1
= I
B
.R
1
(6.11)
V
B1
= 1.100 = 0,1 (V) (~0 V)
Hnh 6.5. Mch dao ng tch thot dng UJT.
108
V
B2
= V
CC
- I
B
R
2
(6.12)
V
B2
= 10 V 1.200 ~ 9,8 V (~Vcc)
in th ti im B trong thanh bn dn:
V
B
= V
CC

2 BB 1
B1 1
R R R
R R
+ +
+
= 10.
200 k 10 100
k 6 100
+ +
+
~ 6 (V) (6.13a)
Khi t in C np in qua VR lm in th tng ln n tr s nh V
P
th diode EB
s dn in.
V
P
= V
B
+ V = 6 + 0,6 = 6,6 (V) (6.13b)
Khi diode EB dn in, l trng t cc E sang thanh bn dn lm R
B1
gim tr s
nn V
B
gim ko theo V
E
gim lm t x in qua diode EB v in tr R
B1
xung mass.

Hnh 6.6. Dng sng ca V
E
, V
B1
, V
B2
.
Khi R
B1
gim I
B
tng gn gp i (~ 2 mA) nn in th:
V
B2
= V
CC
- I
B
. R
2
= 10 2.200 ~ 9,6 (V)
cc B
2
c xung m ra vi bin l 9,6 9,8 = - 0,2 (V). ng thi lc dng
in qua R
B1
v R
1
l I
B
v I
E
do t x ra nn in th V
B1
tng cao. Cc B
1
c xung
dng ra nhng bin ln hn xung m cc B
2
nhiu ln v I
E
c tr s ln hn I
B
.
Khi t C x in t in th V
P
xung tr s V
V
th diode EB ngng dn v hai cc
B
1
, B
2
khng cn xung ra.
Xung ra hai cc B
1
, B
2
c dng xung nhn dng v m.
V
E

V
P

V
V

0
t
1
t
2

V
B2

0
t
t
t
V
B1

0
109
Sau khi t x xong th in th cc chn tr li bnh thng v t C li np in qua
VR, hin tng trn c tip tc.
Tn s dao ng ca mch:
Khi va mi ng in th t s np in t 0 V ln n V
P
ri sau t x in n
V
V
. Nhng ln sau t np t V
V
n V
P
ri li x t in th V
P
xung V
V
. Thi gian np
v x ca t c tnh gia hai in th ny.
T C np in theo cng thc:
V
C
= V
V
+ (V
CC
- V
V
) (1-
RC
t
e
) (6.14a)
V
C
= V
CC
+ (V
CC
- V
V
)
RC
t
e
(6.14b)
t
1
l thi gian t np t V
V
ln V
P
. Khi V
C
= V
P
:
V
P
= V
CC
(V
CC
V
V
)
RC
t
1
e
(6.15)
( )
P CC
RC
t
V CC
V V e V V
1
=

V CC
P CC RC
t
V V
V V
e
1

P CC
V CC
RC
t
V V
V V
e
1
=

P CC
V CC
1
V V
V V
RC.ln t
= (6.16)
T C x in theo cng thc:
(6.17)

t
2
: thi gian t x t V
P
V
V
, khi V
C
= V
V

( )C R R
t
P V
1
1
B
2
.e V V
+
=
(6.18)
( )
V
P
1 B 2
V
V
C.ln R R t
1
+ = (6.19)
Chu k dao ng l: T = t
np
+ t
x
= t
1
+ t
2
(6.20)
Trng hp (R
B1
+ R
1
)C c tr s nh th c th coi nh T ~ t
1
, ng thi do V
V
<<V
C

v V
P
= qV
CC
nn T ~ RC.ln
1
1
(6.21)
( )C R R
t
P C
1
1
B
.e V V
+
=
110

1
1
RCln
1
T
1
f
= = (6.22)
6.2. SCR
6.2.1. Cu to k hiu
SCR (Silicon Controlled Rectifier) c cu to gm bn lp bn dn P, N ghp xen k
to ba mi ni P N hay gi l ba lp tip xc J
1
, J
2
, J
3
v c ni ra ba chn:
A: Anode: cc dng
K: Cathode: cc m
G: Gate: cc khin (cc cng)

Hnh 6.7. Cu to (a), k hiu (b) ca SCR.
SCR c th xem nh tng ng hai BJT gm mt BJT loi NPN v mt BJT loi
PNP ghp li nh hnh v sau:

Hnh 6.8. Mch tng ng vi cu to ca SCR.
SCR
A K
G

(b)
G
K
P
N
N
P
A
(a)
J
1
J
3
3
J
2
B1
B2
K
E1
T2
C2
G
E2
T1
C1
A

A
P
N
N N
G
P
P
K
111
6.2.2. c tuyn
V
AK
: l hiu in th gia cc A v K.
V
AK
> 0: SCR c phn cc thun.
V
AK
= 0: SCR khng c phn cc.
V
AK
< 0: SCR c phn cc nghch.
Cc G nhn xung kch vo SCR.

Hnh 6.9. Mch kho st c tuyn ca SCR.

Hnh 6.10. Mch tng ng hnh 6.9.
Xt mch nh hnh 6.9.
Chnh ngun V
CC
v 0, SCR khng c phn cc, c xung kch vo hay khng
th SCR vn khng c dng chy qua.
Chnh tng ngun V
CC
th SCR c phn cc thun:
Trng hp kha K
1
h (cc G h) khng c xung kch, SCR khng dn in
(SCR trng thi tt). Tuy nhin, khi tng in p ngun V
CC
ln mc ln l in p
V
AK
tng theo n in th ngp V
BO
(Break Over) th in p V
AK
gim xung nh
V
DC
V
CC
R
G
R
A
K
1
V
DC
V
CC
R
G
R
A
K
1
K

A

G

112
diode v dng in I
A
tng nhanh. Lc ny SCR chuyn sang trng thi dn in, dng
in ng vi lc in p V
AK
gim nhanh gi l dng in duy tr I
H
(Holding). Sau
c tnh ca SCR ging nh mt diode nn in. Hin tng ny c th gii thch: khi
V
AK
> 0 th lp tip xc (mi ni P N ) J
1
, J
3
c phn cc thun, J
2
c phn cc
nghch. Dng qua SCR l dng r rt nh, xem nh SCR trng thi tt. Khi tng in p
ngun V
CC
ln mc ln l in p V
AK
tng theo n in th ngp V
BO
th lp tip
xc (mi ni P N ) J
2
b nh thng, c dng thun I
A
rt ln chy qua SCR theo chiu
t A K, lc ny V
AK
gim xung rt thp. SCR chuyn sang trng thi dn in, dng
I
A
tng theo V
AK
ging c tuyn V A ca diode v t duy tr trng thi ny.
Trng hp kha K
1
ng: c xung kch, V
G
= V
DC
I
G
R
G
, SCR d chuyn sang
trng thi dn in khi V
AK
< V
BO
. Thc nghim cho thy khi dng in cung cp cho
cc G cng ln th ch cn V
AK
nh l SCR dn in. SCR s t duy tr trng thi dn
m khng cn c dng I
G
lin tc. C th khi c V
G
> 0 kch vo SCR, mi ni J
3
c in
t t N dch chuyn sang P. Mt t in t chy v cc dng ca ngun V
DC
, hnh thnh
dng iu khin I
G
. Phn ln in t cn li dch chuyn v pha J
2
, chng c tng tc,
ng nng ln, ph v mt s lin kt ca nguyn t Si to thm nhng in t t do
mi. S in t mi c gii phng tham gia bn ph cc nguyn t Si trong vng
chuyn tip. Kt qu ca phn ng dy chuyn lm xut hin ngy cng nhiu in t
chy qua J
1
, n cc dng ca ngun V
CC
hin tng dn in ca SCR.
i cc ca ngun V
CC
SCR c phn cc nghch
Phn cc nghch SCR l ni A vo cc m, K vo cc dng ca ngun V
CC
. Trng
hp ny ging nh diode b phn cc nghch. SCR s khng dn in m ch c dng r
rt nh i qua. Khi tng in p ngc ln ln th SCR s b nh thng v dng in
qua theo chiu ngc. in p ngc nh thng SCR l V
BR
. Thng thng tr s
V
BR
v V
BO
bng nhau v ngc du.
Xt mch nh hnh 6.10 ta c:
I
C1
=
1
I
E1
+ I
CBO1
=
1
I
K
+ I
CBO1
(6.23)
I
C2
=
2
I
E2
+ I
CBO2
=
1
I
A
+ I
CBO2
(6.24)
I
C1
= I
B2
; I
C2
= I
B1
(6.25)
I
E1
= I
K
= I
A
+ I
G
(6.26)
I
E2
= I
A
= I
C1
+ I
B1
= I
C1
+ I
C2
(6.27)
I
A
= I
C1
+ I
C2
=
1
I
K
+ I
CBO1
+
1
I
A
+ I
CBO2
(6.28a)
I
A
=
1
I
A
+
1
I
G
+ I
CBO1
+
1
I
A
+ I
CBO2
(6.28b)
) ( 1
I I I
I
2 1
CBO2 CBO1 G 1
A
+
+ +
= (6.28c)
113
Khi (
1
+
2
) 1, dng I
A
ch yu l dng r rt nh nn SCR tt. Vi kch thch bn
ngoi sao cho I
G
hay dng r tng,
1
v
2
tng dn n (
1
+
2
) 1, I
A
tng rt cao,
tng ng SCR chuyn t trng thi tt sang trng thi dn. Khi SCR dn, hi tip dng
to bi vng kn I
C1
= I
B2
; I
C2
= I
B1
s duy tr SCR dn in n khi c tc ng lm cho
SCR tt.
Theo nguyn l ny dng in qua hai BJT s c khuch i ln dn v hai BJT
dn trng thi bo ha. Khi in p V
AK
gim rt nh (~ 0,7V) v dng in qua
SCR l:
A
CC
A
AK CC
A
R
V
R
V V
I ~
= (6.29)
Cng t biu thc (6.1) ta suy ra cc kch thch c th lm SCR dn:
Kch mt xung dng I
G
vo cc G tng ng I
B1
tng lm T
1
dn,
1
tng
I
C1
= I
B2
tng,

2
tng. Kt qu (
1
+
2
) 1.
Tng in p thun V
AK
n gi tr V
VO
, mi ni P N (J
2
) b nh thng
nn dng r ti mi ni J
2
tng lm (
1
+
2
) 1.

Tc ng nh sng bn ngoi vo lm dng r tng.

Nhit tng nh hng dng r tng.

Dng c tuyn I
A
(V
AK
) ca SCR nh hnh 6.11.

Hnh 6.11. c tuyn ca SCR.
I
G
= 0 ; I
G2
> I
G1
> I
G

6.2.3. Cc thng s ca SCR
a. Dng in thun cc i:
y l tr s ln nht dng in qua SCR m SCR c th chu ng lin tc, qu tr
s ny SCR b h. Khi SCR dn in V
AK
khong 0,7 V nn dng in thun qua
SCR c th tnh theo cng thc:
I
A

V
AK

V
BR

I
G
= 0
V
H
V
Bo

I
G1

I
G2

0
114
A
CC
A
R
0,7 V
I

= (6.30)
b. in p ngc cc i
y l in p ngc ln nht c th t gia A v K m SCR cha b nh thng,
nu vt qua tr s ny SCR s b nh thng. in p ngc cc i ca SCR thng
khong 100 V n 1000 V.
c. Dng in kch cc tiu: I
Gmin

SCR c th dn in trong trng hp in p V
AK
thp th phi c dng in kch
vo cc G ca SCR. Dng I
Gmin
l tr s dng kch nh nht iu khin SCR dn
in v dng I
Gmin
c tr s ln hay nh ty thuc cng sut ca SCR, nu SCR c cng
sut cng ln th I
Gmin
phi cng ln. Thng thng I
Gmin
t 1mA n vi chc mA.
d. Thi gian m SCR
L thi gian cn thit hay rng ca xung kch SCR c th chuyn t trng thi
tt sang trng thi dn, thi gian m khong vi micr giy.
e. Thi gian tt
L thi gian cn thit phi di SCR c th chuyn t trng thi dn sang trng
thi tt, nu khng th SCR s dn in tr li. Thi gian tt ca SCR khong vi chc
micr giy.
6.3.5. ng dng ca SCR
SCR c rt nhiu chng loi (c ti liu gii thiu 42652 loi): SCR thng dng,
SCR c tc cao, SCR hai chiu, . Loi v cc thng s ca SCR nhn bit c khi
tra cu. Khi dng ta c th tra cu, thay th nhng loi tng ng vi nhau. SCR c
ng dng nhiu trong nhng mch in t: mch bo ng, mch bo v qu p, bo v
qu dng, lm chuyn mch khng tip im, mch iu khin tc quay ca ng c,
mch chnh lu c iu khin, iu khin t ng trong cng nghip,
V d 1:

Hnh 6.12. Mch iu khin tc ng c.
R
1
R
2
R
3
V
AC
= 220
V
.1
115
Trong mch in ng c M l ng c vn nng, loi ng c c th dng in AC
hay DC.
Dng in qua ng c l dng in bn k dng v c thay i tr s bng cch
thay i gc kch ca dng I
G
.
Khi SCR cha dn th cha c dng qua ng c, bn k dng dng qua diode D,
in tr R
1
v bin tr VR np vo t C. in p cp cho cc G ly trn t C v qua cu
phn p R
2
- R
3.

Gi s in p kch cho cc G l V
G
= 1 V v dng in kch I
Gmin
= 1 mA th
in p trn t C phi khong 10 V. T C np in qua R
1
v qua VR vi hng s thi
gian l: T = (R
1
+ VR)C
Khi thay i tr s VR s lm thay i thi gian np ca t tc l thay i thi im
c dng xung kch I
G
s lm thay i thi im dn in ca SCR tc l thay i dng
in qua ng c v lm cho tc ca ng c thay i.
Khi dng AC c bn k m th diode D v SCR u b phn cc nghch nn diode
ngng dn v SCR cng chuyn sang trng thi ngng dn.

Hnh 6.13. Dng sng V
M
theo V
A
v xung kch.
V d 2:

Hnh 6.14. Mch chnh lu bn k c iu khin.
V
M

t
t 0
+ +
I
G

t 0
+ +
- -
V
A

Mch to
xung kch
V
AC
SCR
R
t
A
116
Xt mch nh hnh 6.14. in p vo l in xoay chiu V
AC
, qua bin th gim p,
ti A cng l in xoay chiu V
A
c cng tn s vi V
AC
. Gi s bn k u ti A l bn
k dng, SCR c phn cc thun, ang trng thi sn sng ch n khi c xung
kch vo cc G th SCR bt u dn in, c dng I
A
cp cho ti R
t
. Bn k k tip l bn
k m, SCR phn cc nghch, SCR ngng dn, khng c dng cp qua ti. Qu trnh
c lp li ng vi cc bn k sau.

Hnh 6.15. Dng sng in p ng ra V
DC
.
Dng sng in p ng ra V
DC
ng vi in p vo v xung kch nh hnh 6.15.

(6.31)

6.3. DIAC
6.3.1. Cu to k hiu

Hnh 6.16. Cu to (a), mch tng ng vi cu to (b), (c).
V
DC

t
t 0
+ +
I
G

t 0
+ +
- -
V
A

N
1

N
3

N
2

A
1

P
1

P
2

A
2

A 1
T4 T1
T2 T3
A 2
(a)
(c)

N
1

N
2

P
1

P
2

P
1

P
2

N
2

N
3

A
1

A
2

(b)
J
1
J
2
J
3
( ) cos 1
2
V
Vo
m
+ =

117
DIAC (Diode Alternative Current) c cu to gm 4 lp PNPN, hai cc A
1
v A
2
, cho
dng chy qua theo hai chiu di tc ng ca in p t gia hai cc A
1
v A
2
.
DIAC c gi l cng tc bn dn xoay chiu hai cc (Diode AC Semiconductor
Switch).
Cu to ca DIAC tng ng bn BJT mc nh hnh 6.16c.

Hnh 6.17. K hiu ca DIAC.
6.3.2. c tuyn

Hnh 6.18. Mch kho st c tuyn ca DIAC.
Khi A
1
c in th dng th J
1
v J
3

phn cc thun J
2
phn cc ngc V
CC
c
gi tr nh th DIAC trng thi ngng
dn (kha). Nu tng V
CC
ln V
D
=
V
BO
th DIAC chuyn sang trng thi m,
dng qua DIAC tng nhanh, c c tuyn
nh hnh 6.19. Khi A
1
c in th m th
hin tng tng t nhng xut hin dng
in c chiu ngc li, c tuyn nh
hnh 6.19.
V
BO
(Break over): in th ngp, dng
in qua DIAC im V
BO
l dng in
ngp I
BO
.
in p V
BO
c tr s trong khong t 20 V n 40 V. Dng tng ng I
BO
c tr trong
khong t vi chc microampe n vi trm microampe.
A1 A2
V
CC
DIAC
R
A
A
1
A
2
V
CC
R
A
DIAC
A
1
A
2
I
D

0
V
BO

-V
BO

V
D

Hnh 6.19. c tuyn ca DIAC.
118
Ta thng dng DIAC trong mch to xung kch cng TRIAC.
6.4. TRIAC
6.4. 1. Cu to k hiu
TRIAC (Triode Alternative Current) l mt linh kin bn dn c ba cc, bn lp, lm
vic nh 2 SCR mc song song ngc chiu, c th dn in theo hai chiu.

Hnh 6.20. Cu to k hiu ca TRIAC.
TRIAC c gi l cng tc bn dn xoay chiu ba cc (Triode AC Semiconductor
Switch).
6.4.2. c tuyn
c tuyn ca TRIAC c dng nh hnh 6.21.

Hnh 6.21. c tuyn ca TRIAC.
I
B

V
B1B2
V
BO

I
G
= 0
I
G1

I
G2

0
-V
BO

G
B
2

B
1

N
1

N
2

P
1

P
2

P
1

P
2

N
2

N
3

B
1

B
2

G
J
1
J
2
J
3
N3
119
I
G
= 0; I
G2
> I
G1
> I
G

Bn t hp in th c th m TRIAC cho dng chy qua:
B
2
G
+ Xung +
+ Xung -
- Xung -
- Xung +
TRIAC c c tuyn Volt - Ampe gm hai phn i xng nhau qua gc 0, mi phn
tng t c tuyn thun ca SCR.
6.4.3. ng dng

Hnh 6.22. Mch iu khin dng qua ti.
y l mch iu khin dng in qua ti dng TRIAC, DIAC kt hp vi quang tr
Cds tc ng theo nh sng. Khi CdS c chiu sng s c tr s in tr nh lm
in th np c trn t C thp v DIAC khng dn in, TRIAC khng c kch nn
khng c dng qua ti. Khi CdS b che ti s c tr s in tr ln lm in th trn t C
tng n mc DIAC dn in v TRIAC c kch dn in cho dng in qua ti.
Ti y c th l cc loi n chiu sng li i hay chiu sng bo v, khi tri ti th
n t ng sng, khi tri sng n t ng tt.
Ta c th dng TRIAC iu chnh nh sng, nhit l, chiu quay v tc ca
ng c,.
6.5. Hnh dng mt s linh kin

dng in chy t B
2
sang B
1

dng in chy t B
1
sang B
2

C
TRIAC
V
AC
= 220V
R
TI
CdS
DIAC
A
1
A
2
120

Hnh 6.23. Hnh dng ca UJT, SCR, DIAC, TRIAC.

121
CU HI N TP
1. UJT l g? C my loi? K tn v v k hiu tng ng ca UJT.
2. Nu nguyn l hat ng ca UJT.
3. Nu cch kho st c tuyn ca UJT, v dng c tuyn ca UJT.
4. Hy v dng mch dao ng tch thot dng UJT. Gii thch nguyn l hot ng
ca mch ny.
5. SCR l g? V k hiu v mch tng ng dng hai BJT ca n.
6. Nu nguyn l hot ng ca SCR.
7. Nu cch kho st c tuyn ca SCR, v dng c tuyn ca SCR.
8. DIAC l g? V k hiu v mch tng ng dng bn BJT ca n.
9. Nu nguyn l hot ng ca DIAC.
10. Nu cch kho st c tuyn ca DIAC, v dng c tuyn caDIAC.
11. TRIAC l g? V k hiu v mch tng ng dng bn BJT, mch tng ng
dng hai SCR ca n.
12. Nu nguyn l hot ng ca TRIAC.
13. Nu cch kho st c tuyn ca TRIAC, v dng c tuyn caTRIAC.
14. Hy v v gii thch nguyn l hot ng ca vi mch ng dng SCR, DIAC,
TRIAC.
15. Hy so snh dng c tuyn ca cc linh kin sau: DIODE, DIAC, SCR, TRIAC.

162
MC LC
NI DUNG TRANG
Li ni u..1
Chng 1: C s in hc...3
1.1. Ngun gc ca dng in..........3
1.2. Dng in mt chiu.....7
1.3. Dng in xoay chiu.....10
Cu hi v bi tp...13
Chng 2: Linh kin th ng..14
2.1. in tr...14
2.2. T in....26
2.3. Cun cm....35
2.4. Bin th.......40
Cu hi n tp.43
Chng 3: Cht bn dn diode ..44
3.1. Cht bn dn.....44
3.2. Diode bn dn...47
Cu hi n tp.62
Chng 4: Transistor mi ni lng cc..63
4.1. Cu to k hiu.........63
4.2. Nguyn l hot ng....64
4.3. H thc lin h gia cc dng in.....65
4.4. Cc cch mc c bn ca BJT.....66
4.5. c tuyn ca BJT......67
4.6. Phn cc BJT..69
4.7. Mch tng ng dng tham s h ca BJT..74
4.8. Phn loi - ng dng.......79
Cu hi v bi tp...81
Chng 5: Transistor hiu ng trng..88
5.1. JFET....88
5.2. MOSFET.....93
5.3. M hnh tng ng ca FET i vi tn hiu nh - tn s thp......99
5.4. ng dng...100
Cu hi v bi tp.102
Chng 6: Linh kin c vng in tr m..104
6.1. UJT....104
6.2. SCR...110
6.3. DIAC.116
163
6.4. TRIAC..118
6.5. Hnh dng mt s linh kin..119
Cu hi n tp..121
Ph lc Cu hi trc nghim.......122
Chng 1: C s in hc...123
Chng 2: Linh kin th ng.....126
Chng 3: Cht bn dn diode ....134
Chng 4: Transistor mi ni lng cc....142
Chng 5: Transistor hiu ng trng....153
Chng 6: Linh kin c vng in tr m...157
Ti liu tham kho...161
Mc lc....162

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Chng 6: Linh kin c vng in tr m

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