CLA 50 E 1200 HB

High Efficiency Thyristor

Single Thyristor

V RRM = I T(AV)M = I T(RMS) =

1200 V 50 A 79 A

Part number

CLA 50 E 1200 HB

Backside: anode

Features / Advantages:
Thyristor for line frequency Planar passivated chip Long-term stability

Applications:
Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control

Package:
Housing: TO-247

rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant

Ratings Symbol VRSM/DSM VRRM/DRM I R/D VT Definition Conditions TVJ = 25C TVJ = 25C TVJ = 25C TVJ = 125 C TVJ = 25C TVJ = 125 C T VJ = 150 C TVJ = 150 C min. typ. max. 1300 1200 50 4 1.32 1.60 1.27 1.65 50 79 0.88 7.7 0.25 -40 TC = 25C t P = 30 s t P = 300 s PGAV I TSM
average gate power dissipation max. forward surge current

Unit V V A mA V V V V A A V m K/W C W W W W A A A A

max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current

VR/D = 1200 V VR/D = 1200 V IT = IT = 50 A 50 A

forward voltage drop

I T = 100 A I T = 100 A I T(AV)M I T(RMS) VT0 rT R thJC T VJ Ptot PGM

average forward current RMS forward current threshold voltage slope resistance

TC = 125 C 180 sine

for power loss calculation only

thermal resistance junction to case virtual junction temperature total power dissipation max. gate power dissipation

150 500 10 5 0.5

T C = 150 C

t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine

TVJ = 45 C VR = 0 V TVJ = 150 C VR = 0 V TVJ = 45 C VR = 0 V TVJ = 150 C VR = 0 V TVJ = 25C 25

550 595 470 505

It

value for fusing

t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine

1.52 kAs 1.48 kAs 1.11 kAs 1.06 kAs pF

CJ

junction capacitance

VR = 400 V f = 1 MHz

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per diode unless otherwise specified

20101215e

2010 IXYS all rights reserved

CLA 50 E 1200 HB

Ratings Symbol (di/dt) cr Definition

critical rate of rise of current

Conditions TVJ = 150 C f = 50 Hz; tP = 200 s IG = 0.3 A; di G /dt = 0.3 A/s non-repetitive, I T = 50 A TVJ = 150 C TVJ = 25 C TVJ = -40 C TVJ = 25 C TVJ = -40 C TVJ = 150 C TVJ = 25 C 0.3 A/s TVJ = 25 C TVJ = 25 C 0.3 A/s TVJ = 150 C VD = VDRM repetitive, IT = 40 A

min.

typ.

max. 150

Unit A/s

500 1000 1.5 1.6 50 80 0.2 3 125 100 2 200

A/s V/s V V mA mA V mA mA mA s s

(dv/dt) cr VGT I GT VGD I GD IL IH t gd tq

critical rate of rise of voltage

VD = VDRM VD = 6 V VD = 6 V VD = VDRM t p = 10 s IG = 0.3 A; di G /dt = VD = 6 V R GK = VD = VDRM IG = 0.3 A; di G /dt = VR = 100 V; I T = 33 A VD = VDRM ; t p = 200 s di/dt = 10 A/s; dv/dt = 20 V/s

R GK = ; method 1 (linear voltage rise)

gate trigger voltage

gate trigger current

gate non-trigger voltage gate non-trigger current latching current

holding current gate controlled delay time

turn-off time

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per diode unless otherwise specified

20101215e

2010 IXYS all rights reserved

CLA 50 E 1200 HB
Ratings Symbol I RMS R thCH Tstg Weight MD FC
mounting torque mounting force with clip

Definition
RMS current thermal resistance case to heatsink storage temperature

Conditions per terminal

min.

typ. 0.25

max. 70

Unit A K/W C g Nm N

-55 6 0.8 20

150 1.2 120

Part number

Product Marking

C L A 50 E 1200 HB

= = = = = = =

Thyristor (SCR) High Efficiency Thyristor (up to 1200 V) Current Rating [A] Single Part Reverse Voltage [V] TO-247AD (3)

Logo Marking on product DateCode Assembly Code Assembly Line

abcdef YYWWZ 000000

Ordering Standard

Part Name CLA 50 E 1200 HB

Marking on Product CLA50E1200HB

Delivering Mode Tube

Base Qty Code Key 30 503748

Similar Part CLA50E1200TC

Package TO-268AA (D3Pak)

Voltage class 1200

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per diode unless otherwise specified

20101215e

2010 IXYS all rights reserved

CLA 50 E 1200 HB
Outlines TO-247
E Q A A2 S D1 D
2x E2 P P1

D2
Sym. Inches min. max. Millimeter min. max.

4 1
L1 L

3
E1

2x b2

b4
2x e

3x b

C A1

A A1 A2 D E E2 e L L1 P Q S b b2 b4 c D1 D2 E1 P1

0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29

4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per diode unless otherwise specified

20101215e

2010 IXYS all rights reserved

CLA 50 E 1200 HB
160 140 120 100 900 800 700 600 TVJ = 45C 10000 VR = 0 V

IT
80

ITSM 500
400

I2t
1000

TVJ = 45C TVJ = 125C

[A] 60
40 TVJ = 125C 20 TVJ = 25C 0 0.0 0.5 1.0 1.5 2.0 2.5

[A]
300 TVJ = 125C 200 100 0 50 Hz, 80% VRRM 0.01 0.1 1

[A2s]

100 1
2

5 6 7 8 910

VT [V] Fig. 1 Forward characteristics

t [s] Fig. 2 Surge overload current

t [ms] Fig. 3 I t versus time (1-10 ms)

10
1: IGT, 2: IGT, 3: IGT, TVJ = 125C TVJ = 25C TVJ = -40C

1000

80 70 60

2 3

100

VG
1
6 5 4

tgd [s]
10

typ.

Limit

IT(AV)M 50
40

[V]

[A]
TVJ = 125C

30 20 10

4: PGAV = 0.5 W IGD, TVJ = 150C 5: PGM = 1 W 6: PGM = 10 W

0.1 1 10 100 1000 10000

1 10

0 100 1000 0 20 40 60 80 100 120 140 160

IG [mA] Fig. 4 Gate trigger characteristics

IG [mA] Fig. 5 Gate controlled delay time tgd

TC [C] Fig. 6 Max. forward current at case temperature

0.3

Ri 0.017

ti 0.0019 0.0115 0.12 0.5

0.0075 0.0011 0.057 0.158 0.0105 [K/W]

0.1

0.2

ZthJC

0.0 0.001

0.01

0.1

10

t [s] Fig. 7 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per diode unless otherwise specified

20101215e

2010 IXYS all rights reserved