Preliminary Technical Information

IXGH25N250
IXGT25N250
IXGV25N250S

High Voltage IGBT

For Capacitor Discharge
Applications

VCES = 2500 V
IC25 = 60 A
VCE(sat) 2.9 V
TO-247 (IXGH)

Symbol

Test Conditions

Maximum Ratings

VCES

TJ = 25C to 150C

2500

VCGR

TJ = 25C to 150C; RGE = 1 M

2500

VGES

Continuous

20

VGEM

Transient

30

IC25

TC = 25C

60

IC110

TC = 110C

25

ICM

TC = 25C, VGE = 20 V, 1 ms

200

SSOA
(RBSOA)

VGE = 20 V, TJ = 125C, RG = 20
Clamped inductive load @ 1250V

ICM = 240

PC

TC = 25C

250

-55 ... +150

TJM

150

Tstg

-55 ... +150

TJ

1.6 mm (0.062 in.) from case for 10 s

300

TSOLD

Plastic body for 10 s

260

Md

Mounting torque (TO-247)

1.13/10

Nm/lb-in

6
4

g
g

TO-247
TO-268

Symbol

Test Conditions

BVCES

IC

= 250 A, VGE = 0 V

2500

VGE(th)

IC

= 250 A, VCE = VGE

3.0

ICES

VCE = 0.8 VCES

VGE = 0 V

IGES

VCE = 0 V, VGE = 20 V

VCE(sat)

IC
IC

Characteristic Values
(TJ = 25C unless otherwise specified)
Min. Typ. Max.

TJ = 125C

= 25 A, VGE = 15 V
= 75 A

2007 IXYS CORPORATION, All rights reserved

C (TAB)

TO-268 (IXGT)

G
E
C (TAB)

PLUS220SMD (IXGV...S)

TL

Weight

G
E

G = Gate,
E = Emitter,

C (TAB)

C = Collector,
TAB = Collector

Features
High peak current capability
Low saturation voltage
MOS Gate turn-on
-drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification

V
5.0

50
1

A
mA

100

nA

2.9
5.2

V
V

Applications
Capacitor discharge
Pulser circuits
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)

DS99760 (04/07)

IXGH25N250 IXGT25N250 IXGV25N250S

Symbol

Test Conditions

Characteristic Values
(TJ = 25C unless otherwise specified)
Min. Typ. Max.

gfs

IC = 50 A; VCE = 10 V, Note 1

IC(ON)
Cies

16

26

VGE = 15V, VCE = 20V, Note 1

240

VCE = 25 V, VGE = 0 V, f = 1 MHz

2310

pF

Coes

75

pF

Cres

23

pF

75

nC

Qge

15

nC

Qgc

30

nC

68

ns

233

ns

209

ns

200

ns

Qg

IC = 50 A, VGE = 15 V, VCE = 0.5 VCES

Resistive load

tri

IC = 50 A, VGE = 15 V, Note 1
VCE = 1250 V, RG = 5

tfi

Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter) Tab - Drain (Collector)

Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC

0.5 C/W

RthJC
RthCS

Dim.

td(on)
td(off)

TO-247 (IXGH) Outline

(TO-247)

0.25

C/W

Notes: 1. Pulse test, t 300 s, duty cycle, d 2 %

2. Additional provisions for lead-to-lead voltage
isolation are required at VCE > 1200 V
PLUS220SMD (IXGV_S) Outline

Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC

TO-268 (IXGT) Outline (D3-Pak)

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.

Ref: IXYS CO 0052 RA

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

7,157,338B2

IXGH25N250 IXGT25N250 IXGV25N250S

Fig. 1. Output Characteristics
@ 25C

Fig. 2. Extended Output Characteristics

@ 25C
250

150
V GE = 25V

135

20V

200

15V

120

175

90

IC - Amperes

105

IC - Amperes

V GE = 25V

225

20V

10V

75
60

125
100

45

75

30

50

15

25

15V

150

10V

0
0

Fig. 3. Output Characteristics

@ 125C

12

14

16

18

20

Fig. 4. Dependence of VCE(sat) on

Junction Temperature
2.4

200
V GE = 25V
180

V GE = 15V

2.2

20V

VCE(sat) - Normalized

160
140

IC - Amperes

10

VCE - Volts

VCE - Volts

15V

120
100

10V

80
60

1.6
I C = 100A

1.4
1.2

I C = 50A

40

0.8

20

0.6

I C = 150A

1.8

0.4
0

10

12

14

16

-50

-25

25

50

75

100

125

150

12

13

TJ - Degrees Centigrade

VCE - Volts

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

Fig. 6. Input Admittance

200

10
V GE = 15V

180

IC - Amperes

VCE - Volts

8
I C = 150A

160

TJ = - 40C

140

25C
125C

120
100
80

I C = 100A
60

40
4

I C = 50A

20

0
7

10

11

12

13

14

VGE - Volts

2007 IXYS CORPORATION, All rights reserved

15

16

17

VGE - Volts

10

11

IXGH25N250 IXGT25N250 IXGV25N250S

Fig. 8. Resistive Turn-on Rise Time
vs. Junction Temperature

36

680

33

640

RG = 5

30

600

VGE = 15V

27

560

VCE = 1250V

t r - Nanoseconds

g f s - Siemens

Fig. 7. Transconductance

24
21
18

TJ = - 40C

15

25C
125C

12

520
480
440
I C = 50A

400
360

320

280

240

I C = 150A

200
0

20

40

60

80

100

120

140

160

180

200

25

35

45

55

I C - Amperes

Fig. 9. Resistive Turn-on Rise Time

vs. Collector Current
RG = 5
TJ = 125C

VGE = 15V

600

95

500
450
TJ = 25C

400

105

115

700

124

680

120

660

116

640

550

t r - Nanoseconds

t r - Nanoseconds

85

350

112

I C = 150A

620

108

600

104

td(on) - - - -

tr

580

100

TJ = 125C, V GE = 15V

560

96

VCE = 1250V

540

300

520

250

500

200

92
88

I C = 50A

84

480
50

60

70

80

90

100

110

120

130

140

80
4

150

10

I C - Amperes

245
240

20

170

215

160

210

150

I C = 150A, 50A

t f - Nanoseconds

180

210

RG = 5, VGE = 15V

200

VCE = 1250V

230

190

225

180

220

170

215

160
TJ = 25C

210

TJ = 125C

150

205

140

205

140

200

130

200

130

195

120

195

120

190

110
105 115 125

190

25

35

45

55

65

75

85

95

TJ - Degrees Centigrade

IXYS reserves the right to change limits, test conditions, and dimensions.

50

60

70

80

90

100 110 120

I C - Amperes

110
130 140 150

t d ( o f f ) - Nanoseconds

I C = 50A, 150A

220

220

235

t d ( o f f ) - Nanoseconds

190

VCE = 1250V

18

td(off) - - - -

tf

240

200

td(off) - - - -

RG = 5, VGE = 15V

225

16

245

210

tf

14

Fig. 12. Resistive Turn-off Switching Times

vs. Collector Current
220

230

12

RG - Ohms

Fig. 11. Resistive Turn-off Switching Times

vs. Junction Temperature

235

125

t d ( o n ) - Nanoseconds

VCE = 1250V

t f - Nanoseconds

75

Fig. 10. Resistive Turn-on Switching Times

vs. Gate Resistance

700
650

65

TJ - Degrees Centigrade

IXGH25N250 IXGT25N250 IXGV25N250S

Fig. 13. Resistive Turn-off Switching Times
vs. Gate Resistance
260

Fig. 14. Gate Charge

280

td(off) - - - -

250

14

t f - Nanoseconds

240

220

235

205

230

190
I C = 150A, 50A

175

220

160

215

145

210

130

205

115

200

t d ( o f f ) - Nanoseconds

235

10

12

14

16

18

I G = 10 mA

12
10
8
6
4
2
0

100
4

I C = 50A

250

V CE = 1250V
245

225

VCE = 1250V

265

TJ = 125C, VGE = 15V

VGE - Volts

tf

255

16

20

10

20

30

40

50

60

70

80

30

35

40

QG - NanoCoulombs

RG - Ohms

Fig. 15. Reverse-Bias Safe Operating Area

Fig. 16. Capacitance

280

10000
f = 1 MHz

Capacitance - PicoFarads

240

I C - Amperes

200

160

120

80

TJ = 125C

C ies

1000

C oes
100

RG = 20
dV / dT < 10V / ns

40

C res
10

0
250

500

750

1000

1250

1500

1750

2000

2250

2500

10

15

20

25

V CE - Volts

V CE - Volts

Fig. 17. Maximum Transient Thermal Impedance

Z ( t h ) JC - C / W

1.00

0.10

0.01
0.0001

0.001

0.01

0.1

10

Pulse Width - Seconds

2007 IXYS CORPORATION, All rights reserved

IXYS REF: G_25N250 (5P-P528) 04-27-07-D.xls