PolarHTTM

Power MOSFET

IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P

VDSS
ID25

RDS(on)

N-Channel Enhancement Mode

Avalanche Rated

TO-247 (IXTH)

Symbol

Test Conditions

VDSS

TJ = 25 C to 150 C

300

Maximum Ratings

VDGR

TJ = 25 C to 150 C; RGS = 1 M

300

VGS

Continuous

20

VGSM

Transient

30

ID25

TC = 25 C

88

ID(RMS)

External lead current limit

75

IDM

TC = 25 C, pulse width limited by TJM

220

IAR

TC = 25 C

60

EAR

TC = 25 C

60

mJ

EAS

TC = 25 C

2.0

dv/dt

IS IDM, di/dt 100 A/s, VDD VDSS

TJ 150 C, RG = 4

10

V/ns

PD

TC = 25 C

600

-55 ... +150

150
-55 ... +150

C
C
C

300
260

C
C

TJ
TJM
Tstg
TL
TSOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

Md

Mounting torque

Weight

TO-247
TO-264
TO-3P & TO-268

D (TAB)
S

TO-264 (IXTK)

S
D (TAB)

TO-3P (IXTQ)

(TAB)

TO-268 (IXTT)

1.13/10 Nm/lb.in.
6.0
10
5.5

Symbol
Test Conditions
(TJ = 25 C, unless otherwise specified)

g
g
g

Characteristic Values
Min. Typ.
Max.

BVDSS

VGS = 0 V, ID = 250 A

300

VGS(th)

VDS = VGS, ID = 250A

2.5

IGSS

VGS = 20 VDC, VDS = 0

IDSS

VDS = VDSS
VGS = 0 V

RDS(on)

VGS = 10 V, ID = 0.5 ID25

Pulse test, t 300 s, duty cycle d 2 %

2006 IXYS All rights reserved

= 300 V
= 88 A
40 m

TJ = 125 C

V
5.0

100

nA

100
1

A
mA

40

G = Gate
S = Source

D (TAB)

D = Drain
TAB = Drain

Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density

DS99129E(12/05)

IXTH 88N30P IXTK 88N30P

IXTQ 88N30P IXTT 88N30P
Symbol

Test Conditions

Characteristic Values
(TJ = 25 C unless otherwise specified)
Min.
Typ.
Max.

gfs

VDS= 10 V; ID = 0.5 ID25, pulse test

45

60

6300

pF

950

pF

Crss

190

pF

td(on)

25

ns

Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

tr

VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A

24

ns

td(off)

RG = 3.3 (External)

96

ns

25

ns

180

nC

44

nC

90

nC

tf
Qg(on)
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

Qgs
Qgd
RthJC

0.21 C/W
TO-247 and TO-3P
TO-264

RthCS
RthCS

C/W
C/W

0.21
0.15

Source-Drain Diode

Characteristic Values
(TJ = 25 C, unless otherwise specified)
Min.
Typ.
Max.

Symbol

Test Conditions

IS

VGS = 0 V

88

ISM

Repetitive

220

VSD

IF = IS, VGS = 0 V,
Pulse test, t 300 s, duty cycle d 2 %

1.5

trr
QRM

IF = 25 A, -di/dt = 100 A/s

VR = 100 V, VGS = 0 V

250
3.3

ns
C

Characteristic Curves
Fig. 2. Extended Output Characteristics
@ 25C

Fig. 1. Output Characteristics

@ 25C
200

90
VGS = 10V
9V
8V

80

9V

160
140

60

I D - Amperes

I D - Amperes

70

VGS = 10V

180

50
7V

40
30
20

6V
5V
1

1.5

7V

100
80
60

6V

20

5V

0
0.5

120

40

10

8V

2.5

3.5

10

12

14

16

V D S - Volts

V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,710,405B2
6,710,463

6,727,585
6,759,692
6771478 B2

18

20

IXTH 88N30P IXTK 88N30P

IXTQ 88N30P IXTT 88N30P
Fig. 3. Output Char acte r is tics
@ 125C

Fig. 4. RDS(on ) Nor m alize d to 0.5 ID25

V alue vs . Junction Te m pe r atur e

90

3
V GS = 10V
9V
8V

I D - Amperes

70

V GS = 10V

2.6

R D S (on) - Normalized

80

2.8

7V

60
50
40

6V

30
20

2.2
2
1.8

I D = 88A

1.6
1.4

I D = 44A

1.2
1
0.8

5V

10

2.4

0.6

0.4
0

-50

V D S - V olts

-25

125

150

70

2.8
2.6

TJ = 125C

I D - Amperes

R D S (on) - Normalized

100

External Lead C urrent Lim it

80

2.4
2.2
2
1.8
1.6
1.4

60
50
40
30
20

1.2

TJ = 25C

10

0.8
0

20

40

60

80

-50

100 120 140 160 180 200

I D - A mperes

-25

25

50

75

100

TC - Degrees Centigrade

125

150

Fig. 8. Transconductance

Fig. 7. Input Adm ittance

100

160

90

140

TJ = -40C
25C
125C

80

g f s - Siemens

120

I D - Amperes

75

90

V GS = 10V

50

Fig. 6. Dr ain Cur r e nt vs . Cas e

Te m pe r atur e

0.5 ID25 V alue vs . ID

3.2

25

TJ - Degrees Centigrade

Fig. 5. RDS(on) Nor m alize d to

3.4

100
80
60
TJ = 125C
25C
-40C

40
20

70
60
50
40
30
20
10
0

0
4

4.5

5.5

6.5

V G S - Volts

2006 IXYS All rights reserved

7.5

20

40

60

80

100

120

I D - Amperes

140

160

180

IXTH 88N30P IXTK 88N30P

IXTQ 88N30P IXTT 88N30P
Fig. 9. Source Current vs.
Source-To-Drain Voltage

Fig. 10. Gate Charge

10

280
240

VDS = 150V

I D = 44A
I G = 10mA

VG S - Volts

I S - Amperes

200

160
120
TJ = 125C

80

6
5
4
3
2

TJ = 25C

40

1
0

0
0.4

0.6

0.8

V S D - Volts

1.2

1.4

1.6

20

40

60

80

100

120

140

160

180

Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area

Fig. 11. Capacitance

10000

1000

C iss

I D - Amperes

Capacitance - picoFarads

TJ = 150C
R DS(on) Limit

C oss

1000

TC = 25C

100

100s

25s

1ms
10ms
10

DC

C rss

f = 1MHz

100

1
0

10

15

20

25

V D S - Volts

30

35

40

10

100

1000

V D S - Volts

Fig. 13. Maximum Transient Thermal Resistance

R(th) J C - C / W

1.00

0.10

0.01
1

10

100

Pulse Width - milliseconds

IXYS reserves the right to change limits, test conditions, and dimensions.

1000

IXTH 88N30P IXTK 88N30P

IXTQ 88N30P IXTT 88N30P
TO-247 (IXTH) Outline

TO-268 (IXTT) Outline

Terminals:
1. Gate
2,4. Drain
3. Source

Dim.

TO-3P (IXTQ) Outline

Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC

Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC

TO-264 (IXTK) Outline

2006 IXYS All rights reserved

Terminals:
1. Gate
2,4. Drain
3. Source