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2SC5127, 2SC5127A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.60.2 3.20.1 9.90.3 2.90.2
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C)
Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150 55 to +150 Unit V
15.00.3
3.00.2
13.70.2
+0.5
2.60.1 0.70.1
emitter voltage 2SC5127A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V V V A A A W C C
1 2 3
PC Tj Tstg
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC5127 2SC5127A
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.6A IC = 0.6A, IB = 0.17A IC = 0.6A, IB = 0.17A VCE = 10V, IC = 0.1A, f = 1MHz IC = 0.6A, IB1 = 0.17A, IB2 = 0.34A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s min typ max 100 100 100 Unit A A V
Power Transistors
PC Ta
40 1.2 (1) TC=Ta (2) With a 100 100 2mm Al heat sink (3) With a 50 50 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C IB=150mA 1.0
2SC5127/2SC5127A
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 25C 0.3 TC=100C 0.1 25C 0.03 0.01 0.01 0.03
VCE(sat) IC
30 (1)
20
0.4
20mA 10mA
10
0.2
0 0 2 4 6 8 10 12
0.1
0.3
10
VBE(sat) IC
100
hFE IC
Collector output capacitance Cob (pF)
IC/IB=5 1000 VCE=5V 1000
Cob VCB
IE=0 f=1MHz TC=25C
30
300
300
10
100
100
30 25C
TC=100C
30
10
25C
10
0.1
0.3
10
1 0.01 0.03
fT IC
100 VCE=10V f=1MHz TC=25C 100 30
ton, tstg, tf IC
Pulsed tw=1ms Duty cycle=1% IC/IB=3.5 (2IB1=IB2) VCC=200V TC=25C ton
30
10 3 tstg 1 0.3
10
tf 0.1 0.03
0.3
0.1 0.01
10
30
100
300
1000
Power Transistors
Area of safe operation, reverse bias ASO
4.0 3.5 Lcoil=180H IC/IB=5 (IB1=IB2) TC<100C
2SC5127/2SC5127A
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
3.0 2.5 2.0 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 800
IB2
VCC
tW
Vclamp
Rth(t) t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V 0.2A (2W) and without heat sink (2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink
1000
100
(1)
10
(2)
0.1 104
103
102
101
10
102
103
104
Time t (s)