VNAYAKA MISSIONS UNIVERSITY V.M.K.V.

ENGINEERING COLLEGE, SALEM-636308 DEPARTMENT OF ECE

LESSON PLAN Name /ECE Sub. Code TF/ECE/25 Sub. Name II Sec
S.No 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Date 21.07.09 22.07.09 23.07.09 24.07.09 28.07.09 29.07.09 30.07.09 31.07.09 04.08.09 05.08.09 06.08.09 07.08.09 11.08.09 12.08.09 13.08.09 14.08.09 20.08.09 21.08.09 25.08.09 26.08.09 27.08.09 28.08.09

: S.Karthick : : Electronic Devices : II ECE B

Period
UNIT I

Desig./Dept

: Lect

Faculty Code : Sem/Year : III /

Topics to be covered
ELECTRON DYNAMICS

2,7 2 4 1 2,7 2 4 1 2,7 2 4 1 2,7 2 4 1 4 1 2,7 2 4 1

Introduction. Motion of electron in an Electric field Motion of electron in a Magnetic field Motion of electron in Combined Electric and Magnetic fields Deflection System of a Oscilloscope tube Focusing system of a Oscilloscope tube Working principle of Television picture tube Working principle of LCD displays, Flat panel displays Seminar, Assignment-I
TRANSPORT PHENOMENON IN SEMICONDUCTOR

UNIT II

Mobility and Conductivity of Electron Drift Current and Diffusion Current of Electron Continuity Equation of Electron Minority carrier injection in Electrons Recombination in Homogeneous semiconductors, Characteristics of Thermistors Characteristics of Peizo Resistors Hall effect in Electron, Thermoelectric effect in Electron Seminar, Assignment-II
UNIT III PN JUNCTION

Analysis of PN Junction Diode, Diode Equation Principle of Transition and Diffusion capacitance Break down characteristics of PN Diode Charge control model and switching characteristics of PN diode Working Principle of Tunnel diode and Light Emitting Diode Working Principle of Bipolar Junction transistor(BJT),Ebers moll's equation

23 24 25 26

02.09.09 03.09.09 04.09.09 08.09.09

2,7 2 4 1

Charge control approach to hybrid pi model & characteristics for BJT Working Principle of Power transistor with current Equation Working Principle of Junction Field Effect Transistor(JFET) with current Equation Seminar, Assignment-III

UNIT IV METAL SEMICONDUCTOR STRUCTURE2708.09.091Band diagram of metal semiconductor devices 2809.09.092,7Current flow mechanisms of metal semiconductor junction2910.09.092Working Principle of metal junction diode3011.09.094Expression for Threshold Voltage in Metal Oxide Semiconductor FET3115.09.091Expression for Gate capacitance in MOSFET3216.09.092,7Characteristics of MOSFET3322.09.091Characteristics of Power MOSFET3423.09.092,7Seminar, Assignment-IVUNIT V SPECIAL SEMICONDUCTOR DEVICES AND DEVICE TECHNOLOGY3524.09.092Introduction to Charge Transfer Devices3625.09.094Characteristics of Unijunction Transistor3729.09.091Characteristics of Silicon Controlled Rectifier 3830.09.092,7Characteristics of DIAC ,TRIAC3930.09.092Characteristics of GTO and Introduction to Gallium Arsenide Devices4001.10.094Device Manufacturing Technologies-Planar Process4106.10.091Diffusion Method, Ion Implantation Method and Vapour Deposition Method4207.10.092,7Additive and Subtractive Sequence Method, Procell sequence for bipolar 4308.10.09 2NMOS and CMOS

integrated circuits4409.10.094Seminar, Assignment-V ASSIGNMENT DETAILSAssignment no.TopicSub. Date1Working principle of Television picture tube31.07.092Working Principle of JFET with current Equation14.09.093Working Principle of Bipolar Junction transistor (BJT)08.09.094Current flow mechanism of metal semiconductor junction23.09.095NMOS and CMOS integrated circuits09.10.09Text Books: 1. Millman and Halkias, " Electronic Devices and Circuits ", Tata McGraw Hill, 1991. 2. David A. Bell, " Electron Devices and Circuits ", 3rd Edition, Prentice Hall of India,1999. References: 1. Jasprit Singh, " Semiconductor Devices an Introduction ", McGraw Hill International Edition, 1994. 2. Sze S.M., " Physics of Semiconductor Devices ", Wiley-Inter science, 1981. 3. Yang, " Fundamentals of semiconductor devices ", McGraw Hill International Edition, 1978. 4. Street Man, " Solid State Electronic Devices ", Prentice Hall of India, IV Edition, 1995.

STAFF IN-CHARGE HOD/ECE