DSEP 60-06A DSEP 60-06AT

HiPerFREDTM Epitaxial Diode

with soft recovery
Preliminary Data
VRSM V 600 VRRM V 600 DSEP 60-06A DSEP 60-06AT Type
A C

IFAV = 60 A VRRM = 600 V trr = 35 ns

TO-247 AD (A-Type) TO-268 AA (AT-Type)

C A C (TAB)

A A C (TAB)

A = Anode, C = Cathode, TAB = Cathode

Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight

Conditions TVJ = TVJM TC = 110C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 1.6 A; L = 180 H VA = 1.5VR typ.; f = 10 kHz; repetitive

Maximum Ratings 70 60 600 0.3 0.2 -55...+175 175 -55...+150 A A Features A

q

mJ A C C C W Nm g

q q q q q q

International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0

TC = 25C mounting torque typical

230 0.8...1.2 6

Applications
q

q q

Symbol IR x

Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 60 A; TVJ = 150C TVJ = 25C

Characteristic Values typ. max. 650 2.5 1.39 2.04 0.65 0.25 mA mA V V K/W K/W ns

q q q

VF y RthJC RthCH trr IRM

Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders

IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100C

Advantages
q

35 8.3

A
q q

Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch

Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified

Dimensions see outlines.pdf

2000 IXYS All rights reserved

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018

IXYS reserves the right to change limits, test conditions and dimensions.

DSEP 60-06A DSEP 60-06AT

160 A 140 IF 120 4000 nC 3000

TVJ= 100C VR = 300V

80 A 60

TVJ= 100C VR = 300V

TVJ= 25C
100

Qr 2000

TVJ=100C
80

IF=120A IF= 60A IF= 30A

IRM 40

IF=120A IF= 60A IF= 30A

TVJ=150C
60 40 20 0 0 1 VF 2 V 0 100 A/ms 1000 -diF/dt 0 0 200 400 1000 20

ms 1000 600 A/ 800 -diF/dt

Fig. 1 Forward current IF versus VF

Fig. 2 Reverse recovery charge Qr versus -diF/dt

140 ns 130

Fig. 3 Peak reverse current IRM versus -diF/dt

20 V VFR 15 1.6 s tfr 1.2

2.0

TVJ= 100C VR = 300V

1.5 Kf 1.0

trr 120 110

tfr IF=120A IF= 60A IF= 30A

VFR
0.8

10

I RM
100 0.5 5 0.4

Qr

90 80 0 0

TVJ= 100C IF = 60A

0 200 400 600 -diF/dt 800 A/ ms 1000 200 400 0.0 ms 1000 600 A/ 800 diF/dt

0.0 0 40 80 120 C 160 TVJ

Fig. 4 Dynamic parameters Qr, IRM versus TVJ

1 K/W 0.1 ZthJC 0.01

Fig. 5 Recovery time trr versus -diF/dt

Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.0385

0.001

0.0001 0.00001

DSEP 60-06A

0.0001

0.001

0.01

0.1 t

Fig. 7 Transient thermal resistance junction to case

018

NOTE: Fig. 2 to Fig. 6 shows typical values

2000 IXYS All rights reserved

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