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PHYSICS AND MODELING OF SEMICONDUCTOR DEVICES L 3 Course Objectives: This course will help the students acquire a deep

understanding of modeling FET devices which plays an important role in fabrication of integrated circuits. This is likely the most advanced course on this topic that students will encounter. It should prepare students for research or development of device technology or digital or analog circuits for many years to come. Course Outcomes: A student completing this course will be able to Explain and apply the semiconductor concepts of drift, diffusion, donors and acceptors, majority and minority carriers, excess carriers, low level injection, minority carrier lifetime, quasi-neutrality, and quasi-statics; Explain the underlying physics and principles of operation of p-n junction diodes, metal-oxide-semiconductor (MOS) capacitors, bipolar junction transistors (BJTs), and MOS field effect transistors (MOSFETs), and describe and apply simple large signal circuit models for these devices which include charge storage elements. Prerequisite: The primary prerequisite is undergraduate level semiconductor device physics course. Semiconductor Physics: 10 Hrs T 0 P 0 C 3

Metals, insulator, semiconductors, intrinsic and extrinsic semiconductors, direct and indirect band gap, free carrier densities, Fermi distribution, density of states, Boltzmann statistics, thermal equilibrium, current flow mechanisms, drift current, diffusion current, mobility, band gap narrowing, resistance, generation and recombination, lifetime, internal electro-static fields and potentials, Poissons equation, continuity equations, drift-diffusion equations. PN-Junction Diodes: 8 Hrs Thermal equilibrium physics, energy band diagrams, space charge layers, internal electro-static fields and potentials, reverse biased diode physics, junction capacitance, wide and narrow diodes, transient behavior, transit time, diffusion capacitance, small signal model.

Bipolar Transistors:

8 Hrs

Basic theory and operation, heavy doping effects, double diffused transistors, Ebers-Moll model, low forward bias, junction and diffusion capacitance, transit times, parasitic, small-signal models, Early effect, saturation and inverse operation, breakdown mechanisms, punch-through. MOS Transistors 12 Hrs MOS capacitor, accumulation, depletion, strong inversion, threshold voltage, contact potential, oxide and interface charges, body effect, drain current, saturation voltage, gate work function, channel mobility, sub-threshold conduction, short channel effects, effective channel length, effects of channel length and width on threshold voltage, Compact models for MOSFET and their implementation in SPICE. Level 1, 2 and 3, MOS model parameters in SPICE. UDSM Transistor Design Issues 7 Hrs Short channel and ultra short channel effects; Effect tox , effect of high k and low k dielectrics on the gate leakage and Source drain leakage; tunneling effects; different gate structures in UDSM - impact and reliability challenges in UDSM. Text Books: 1. M.S.Tyagi, Introduction to Semiconductor Materials and Devices, Wiley Student Edition. 2. S.M.Sze, Semiconductor Devices Physics and Technology, John Wiley & Sons Inc,Second Edition. References: Getreu, Modeling the bipolar transistor, New York, NY: Elselvier, 1978. D. Roulston, Bipolar Semiconductor Devices, McGraw Hill, 1990. N. Arora, MOSFET Models for VLSI Circuit Simulation, Springer-Verlag, 1993. Yuan Taur and Tak H. Ning, Fundamentals of Modern VLSI Devices Cambridge University Press Nandita Das Gupta and Amitava Das Gupta, Semiconductor Devices Modeling and Technology, Prentice Hall of India.

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