2N5154

SILICON NPN TRANSISTOR

s s

SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR

APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION The 2N5154 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use in switching applications. The complementary PNP type is the 2N5153. TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CBO V CEO V EBO IC I CM IB P tot P tot P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 50 C
o

Value 100 80 6 5 10 1 10 6.7 1 -65 to 200 200

Unit V V V A A A W W W
o o

Total Dissipation at T c 100 o C Total Dissipation at T amb 25 o C Storage Temperature Max. Operating Junction Temperature

C C

June 1997

1/4

2N5154
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 15 175
o o

C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol I CES I CEO I CEV I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Collector Cut-off Current (V BE = -2V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 60 V V CE = 100 V V CE = 40 V V CE = 60 V V EB = 5 V V EB = 6 V I C = 100 mA I C = 2.5 A IC = 5 A I C = 2.5 A IC = 5 A I C = 2.5 A IC IC IC IC = = = = 50 mA 2.5 A 5A 2.5 A I B = 250 mA I B = 500 mA I B = 250 mA I B = 500 mA V CE = 5 V V CE = 5 V V CE = 5 V V CE = 5 V V CE = 5 V T C = -55 o C V CE = 5 V V CE = 5 V V CB = 10 V f = 1KHz f = 20MHz f = 1MHz 0.5 1.3 50 70 40 35 50 3.5 250 pF s s 80 0.75 1.5 1.45 2.2 1.45 200 T C = 150 o C Min. Typ. Max. 1 1 50 500 1 1 Unit A mA A A A mA V V V V V V

V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(sat) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain

h FE C CBO t on t off

Small Signal Current Gain Collector-Base Capacitance Turn on Time Turn off Time

I C = 0.1 A I C = 0.5 A IE = 0

IC = 5 A V CC = 30 V I B1 = 0.5 A IC = 5 A V CC = 30 V I B1 = -IB2 = 0.5A

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

2/4

2N5154

TO-39 MECHANICAL DATA

mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch

G I H

B
P008B
3/4

2N5154

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...

4/4