MTP23P06V

Preferred Device

Power MOSFET 23 Amps, 60 Volts

PChannel TO220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage Continuous Nonrepetitive (tp 10 ms) Drain Current Continuous @ 25C Drain Current Continuous @ 100C Drain Current Single Pulse (tp 10 s) Total Power Dissipation @ 25C Derate above 25C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 23 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 60 60 15 25 23 15 81 90 0.60 55 to 175 794 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C C mJ TO220AB CASE 221A STYLE 5 1 4 G S

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23 AMPERES 60 VOLTS RDS(on) = 120 m

PChannel D

MARKING DIAGRAM & PIN ASSIGNMENT

4 Drain

MTP23P06V LLYWW 3 Source 2 Drain

RJC RJA TL

1.67 62.5 260

C/W C

1 Gate

MTP23P06V LL Y WW

= Device Code = Location Code = Year = Work Week

ORDERING INFORMATION
Device MTP23P06V Package TO220AB Shipping 50 Units/Rail

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2000

November, 2000 Rev. 2

Publication Order Number: MTP23P06V/D

MTP23P06V
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) GateBody Leakage Current (VGS = 15 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 11.5 Adc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 23 Adc) (VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150C) Forward Transconductance (VDS = 10.9 Vdc, ID = 11.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (S Figure (See Fi 8) (VDS = 48 Vdc, ID = 23 Adc, VGS = 10 Vdc) (VDD = 30 Vdc, ID = 23 Adc, VGS = 10 Vdc, Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 23 Adc, VGS = 0 Vdc) (IS = 23 Adc, VGS = 0 Vdc, TJ = 150C) VSD trr (IS = 23 Adc, Adc VGS = 0 Vdc, Vdc dIS/dt = 100 A/s) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 3.5 4.5 7.5 nH nH ta tb QRR 2.2 1.8 142.2 100.5 41.7 0.804 3.5 C ns Vdc 13.8 98.3 41 62 38 7.0 18 14 30 200 80 120 50 nC ns (VDS = 25 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Ciss Coss Crss 1160 380 105 1620 530 210 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 5.0 11.5 3.3 3.2 Mhos 2.8 5.3 0.093 4.0 0.12 Vdc mV/C Ohm Vdc V(BR)DSS 60 IDSS IGSS 10 100 100 nAdc 60.5 Vdc mV/C Adc Symbol Min Typ Max Unit

Reverse Recovery Time

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MTP23P06V
TYPICAL ELECTRICAL CHARACTERISTICS
50 I D , DRAIN CURRENT (AMPS) 40 30 20 10 0 6V 40 8V 9V 7V I D , DRAIN CURRENT (AMPS) 35 30 25 20 15 10 5 10 0 2 3 4 5 6 7 8

TJ = 25C

VGS = 10V

VDS 10 V

TJ = -55C 25C 100C

5V 4V 0 2 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. OnRegion Characteristics

R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)

Figure 2. Transfer Characteristics

0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0

VGS = 10 V

0.12 0.115 0.11 0.105 0.1 0.095 0.09 0.085 0.08 0

TJ = 100C

TJ = 25C

25C

VGS = 10 V

-55C

15 V

10

15 20 25 30 ID, DRAIN CURRENT (AMPS)

35

40

45

10

15 20 30 35 25 ID, DRAIN CURRENT (AMPS)

40

45

50

Figure 3. OnResistance versus Drain Current and Temperature

1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175 1 0 VGS = 10 V ID = 11.5 A I DSS , LEAKAGE (nA) 100

Figure 4. OnResistance versus Drain Current and Gate Voltage

RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)

VGS = 0 V

10

TJ = 125C

50 10 20 30 40 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

60

Figure 5. OnResistance Variation with Temperature

Figure 6. DrainToSource Leakage Current versus Voltage

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MTP23P06V
POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turnon and turnoff delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG VGSP)] td(off) = RG Ciss In (VGG/VGSP)
4000 Ciss C, CAPACITANCE (pF) 3000 Crss VDS = 0 V VGS = 0 V

The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the offstate condition when calculating td(on) and is read at a voltage corresponding to the onstate when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses.

TJ = 25C

2000 Ciss Coss 10 5 VGS 0 Crss VDS 5 10 15 20 25

1000

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

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MTP23P06V
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 9 8 7 6 5 4 3 2 1 0 0 5 Q3 10 15 20 VDS 25 30 TJ = 25C ID = 23 A 35 Q1 Q2 QT VGS 30 27 24 21 18 15 12 9 6 3 0 40 1000 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ = 25C ID = 23 A VDD = 30 V VGS = 10 V

t, TIME (ns)

100

tr tf td(off) td(on)

10

10 RG, GATE RESISTANCE (OHMS)

100

Qg, TOTAL GATE CHARGE (nC)

Figure 8. GateToSource and DrainToSource Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation versus Gate Resistance

DRAINTOSOURCE DIODE CHARACTERISTICS

25 20 15 10 5 0 TJ = 25C VGS = 0 V

I S , SOURCE CURRENT (AMPS)

0.25

0.5

0.75

1.25

1.5

1.75

2.25

2.5

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous draintosource voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, Transient Thermal ResistanceGeneral Data and Its Use. Switching between the offstate and the onstate may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) TC)/(RJC). A Power MOSFET designated EFET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases nonlinearly with an increase of peak current in avalanche and peak junction temperature. Although many EFETs can withstand the stress of draintosource avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated.

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MTP23P06V
SAFE OPERATING AREA
100 I D , DRAIN CURRENT (AMPS) 800 E AS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 700 600 500 400 300 200 100 0 25 50 75 100 125 150 175

VGS = 20 V SINGLE PULSE TC = 25C 100 s 1 ms 10 ms dc

ID = 23 A

10

1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100

0.1

TJ, STARTING JUNCTION TEMPERATURE (C)

Figure 11. Maximum Rated Forward Biased Safe Operating Area

1.00 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t, TIME (s)

Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature

P(pk)

t2 DUTY CYCLE, D = t1/t2 1.0E-01

t1

RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)

1.0E+00

1.0E+01

Figure 13. Thermal Response

di/dt IS trr ta tp IS tb TIME 0.25 IS

Figure 14. Diode Reverse Recovery Waveform

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MTP23P06V
PACKAGE DIMENSIONS
TO220 THREELEAD TO220AB CASE 221A09 ISSUE AA
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04

T B
4

SEATING PLANE

F T S

Q
1 2 3

A U K

H Z L V G D N R J

STYLE 5: PIN 1. 2. 3. 4.

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MTP23P06V

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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MTP23P06V/D

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