Silicore

4-CH DRIVE +POWER CONTROLLER FOR PORTABLE CD

D5901

FEATURE Out line Drawing

z Four channel of H-bridge drivers are 14.0±0.3
10.0±0.3
contained.
33 23
z DC/DC converter control circuit is contained.
z Reset circuit. 34 22

z Reduced voltage detection circuit.

CHMC SXXX

14.0±0.3
z Battery charging circuit.

10.0±0.3
D5901
z General purpose operational a mplifier is
contained. 44 12

z Low power consumption.

1.2
1 11 0.2±0.1
z Thermal shutdown circuit.
2.15±0.1

z QFP44 package.
0.05

<H-bridge driver> 0.8 0.15

0.35±0.1

z Load drive voltage can be processed by PWM control th rough an external co mponent.
z Excellent gain can be obtained by a voltage feedback circuit.
z Mute function is disabled for ch1, ch2 and ch3/ch4 respectively.
<DC/DC converter control circuit>
z Starter and power off function.
z Soft-start function and short-circuit protection function.
z Self-advancing oscillation and clock synchronization are available.
<Reset circuit>
z Reset voltag e is in terlocked with the set voltage of DC/DC converter.
z Inversion output termi nal for reset output is available.
<Reduced voltage detection circuit>
z Battery charger and dry battery allow to switch “E mp ty” detection level.
<Battery charging circuit>
z Constant cu rrent battery charging system allows to vary current value throug h
resistance.
z It is separated from any other blocks and it can be operated independently.
z A charging power transistor is co ntained.
z Independent thermal shutdown circuit is contained.

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 Silicore D5901

BLOCK DIAGRAM AND PIN CONNECTION

OUT1R OUT2R POWGND OUT3R

RCHG OUT1F OUT2F OUT3F OUT4F OUT4R BRAKE1
33 32 31 30 29 28 27 26 25 24 23
BRAKE 1
AMUTE 34 22 IN1

MUTE 1
EMP 35 21 MUTE2

HVc c 36 20 IN2
BTL BTL BTL BTL

MUTE 34
PSW 37 TSD - 19 MUTE34
Maximum +
De tec tion
CLK
CLK 38 - 18 IN4
+

START 39 -
+ - +
17 IN3
Powe r off
sta rter

-
OFF 40 + 16 VREF
Tria ngula r
wa ve
CHGVc c 41 TSD
Pre -drive power supply
15 VSYS2
Over voltage

SEL 42 14 OP+
+
-
+-
+
Control circuit

-
P ower supply

+
PREGND 43 13 OPOUT
B attery power supply

-
+- +

PWMFIL 44 12 VSYS1
+-

1 2 3 4 5 6 7 8 9 10 11
BSEN BATT RESET DEAD SW EO EI SPRT CT NC OP-

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 Silicore D5901

TERMINAL DESCRIPTION

Pin NO. Pin Name Function Equivalent circuit diagram

BATT

16.5K
71K

Battery voltage
1 BSEN
monitor terminal 10K 19K

11.5K

Battery power supply

2 BATT Power unit power supply terminal
input termi n al
VSYS1 VSYS2

90K
Cassette detection
3 RESET
output terminal 3

VSYS1

18K
Dead-ti me setting
4 DEAD
terminal 4

65K

50K

BATT
BATT

Booster transistor
5 SW
drive termi n al 5
250
9K

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 Silicore D5901

TERMINAL DESCRIPTION Continue

Pin NO. Pin Name Function Equivalent circuit diagram

VSYS1
VSYS1

Error a mp lifier output

6 EO
terminal 6

VSYS1
VSYS1

35K
Error a mp lifier input
7 EI 7
terminal

21K

VSYS1
VSYS1

Short-circuit protection
8 SPRT
setting terminal 8
220K

VSYS1 BATT

2K

Triangular wave output 9

9 CT
terminal
420K

20K

10 NC
VSYS1 VSYS1
Operational amplifi er
11 OP-
negative input terminal
14 11

Operational amplifi er
14 OP+ positive input terminal

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 Silicore D5901

TERMINAL DESCRIPTION Continue

Pin NO. Pin Name Function Equivalent circuit diagram

Control circuit power
12 VSYS1 Control circuit power supply terminal
supply input terminal
VSYS1
VSYS1

Operational amplifi er
13 OP O U T
output terminal 13

Pre-driver power supply

15 VSYS2 Pre-driver power supply terminal
input termi n al
VSYS2

16
×4

15K
Reference power supply
30K
16 VREF
input termi n al

75K

CH3 control signal

17 IN3 VSYS2
input termi n al
CH4 control signal
18 IN4
input termi n al
11K
CH2 control signal 17
20 IN2
input termi n al
18
CH1 control signal 20
22 IN1 20PIN=7.5K
input termi n al
22

19 MUTE34 CH3/CH4 mute terminal VSYS2

21 MUTE2 CH2 mute terminal
75K
19

23 BRAKE1 CH1 brake terminal 21

75K
23

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 Silicore D5901

TERMINAL DESCRIPTION Continue

Pin NO. Pin Name Function Equivalent circuit diagram

24 OUT4R CH4 negative ou tput 36

25 OUT4F CH4 positive ou tput

26 OUT3R CH3 negative ou tput
27 OUT3F CH3 positive ou tput
Power unit power
28 POWGND
supply ground 24 25
29 OUT2F CH2 positive ou tput 26 27
29
30 OUT2R CH2 negative ou tput 30
32 31
31 OUT1F CH1 positive ou tput
32 OUT1R CH1 negative ou tput

H-bridge po wer supp ly

36 HVcc
input termi n al 28

CHGVc c

Charging cu rrent setting 950

33 RCHG 33
terminal

BATT
BATT

Reset inversion output

34 AMUTE 34
terminal
95K

35
“E mp ty” detection
35 EMP
output terminal

BATT BATT

37
PWM transistor drive
37 PSW
terminal
54

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 Silicore D5901

TERMINAL DESCRIPTION Continue

Pin NO. Pin Name Function Equivalent circuit diagram

VSYS1

VSYS1

2K
38
External clock
38 CLK synchronization input
terminal

51K
100K
BATT
BATT
390K

Boost DC/DC converter 200K

39 START
starting terminal 39

VSYS1

VSYS1

180K
Boost DC/DC converter
40 OFF
OFF terminal 40
30K

Charging circuit po wer

41 CHGVcc Charging circuit po wer supply terminal
supply input terminal
BATT

220K

“E mpty” detection level

42 SEL
switching terminal 68K
42
30K

Pre-unit power su pply

43 PREGND Pre-unit power supply ground terminal
ground terminal
VSYS1
2K

VSYS1

PWM phase
44 PWMFIL 44
co mpensation terminal
2K

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 Silicore D5901

ABSOLUTE MAXIMUM RATINGS (Ta=25 °C)

Characteristic Symbol Value Unit

Supply Voltage Vcc 13.5 V
Drive output cu rrent Io 500 mA
Power dissipation Pd 625* mW
Operating te mperature range Topr -30~85 °C
Storage Temperature range Tstg -55~150 °C
* Reduced by 5 mW/°C for operation above Ta=25°C

RECOMMENDED OPERATING CONDITION

Parameter Symbol Min. Typ. Max. Unit

Control circuit power supply voltage VSYS1 2.7 3.2 5.5 V
Pre-driver power supply voltage VSYS2 2.7 3.2 5.5 V
H-bridge power supply voltage HVcc PWM BATT V
Power unit power supply voltage BATT 1.5 2.4 8.0 V
Charging circuit power supply voltage CHGVcc 3 .0 4.5 8.0 V
Ambient temperature Ta -10 25 70 °C

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 Silicore D5901

ELECTRIC CHARACTERISTICS
(Unless specified particularly: Ta=2 5°C, BATT=2.4V V S Y S 1 =V S Y S 2 =3.2 V, V R E F =1.6V,
CHGVcc=0V, f C L K =88.2kHz)

Characteristics Symbol Test conditions Min Typ Max Unit

Co mmon section
B AT T s t a n d - b y c u r r e n t IST B AT T = 9 V V S Y S 1 = V S Y S 2 = V R E F = 0 V 0 3 µA
B AT T s u p p l y c u r r e n t at
I B AT H V c c = 0 . 4 5 V, M U T E 3 4 = 3 . 2 V 2.5 4.0 mA
no-load
VSYS1 supply current at H V c c = 0 . 4 5 V, M U T E 3 4 = 3 . 2 V,
ISYS1 3.3 4.5 mA
no-load EI=0V
VSYS2 supply current at
ISYS2 H V c c = 0 . 4 5 V, M U T E 3 4 = 3 . 2 V 4.1 5.5 mA
no-load
CHGVcc supply
ICHGVcc C H G V c c = 4 . 5 V, R O U T = O P E N 0.65 2.0 mA
current at no-load
H-bridge driver section
CH1,3,4 Gvc1,3,4 12 14 16
Vo l t a g e g a i n dB
CH2 Gvc2 21.5 23.5 24.5
Gain error by polarity ∆Gvc -2 0 2 dB

IN pin input CH1,3,4 RIN1,3,4 9 11 13

IN=1.7 and 1.8V kΩ
resistance CH2 RIN2 6 7.5 9
RL=8Ω, IN=0~3.2V
Maximum output voltage VOUT 1.9 2.1 V
H V c c = B AT T = 4 V,
Lower transistor
V S AT L Io=-300mA, IN=0 and 3.2V 240 400 mV
saturated voltage
Upper transistor
V S AT U Io=300mA, IN=0 and 3.2V 240 400 mV
saturated voltage
I n p u t o ff s e t v o l t a g e VOI -8 0 8 mV

Output o ff s e t CH1,3,4 VOO1,3,4 -50 0 50

VREF=IN=1.6V mV
voltage CH2 VOO2 -130 0 130
Dead zone VDS -10 0 10 mV
BRAKE1 ON threshold
VBRON IN1=1.8V 2.0 V
voltage
BRAKE1 OFF threshold
VBROFF IN1=1.8V 0.8 V
voltage
MUTE2 ON threshold
VM2ON IN2=1.8V 2.0 V
voltage
MUTE2 OFF threshold
VM2OFF IN2=1.8V 0.8 V
voltage
MUTE34 ON threshold
VM34ON IN3= IN4=1.8V 2.0 V
voltage
MUTE34 OFF threshold
VM34OFF IN3= IN4=1.8V 0.8 V
voltage
VREF ON threshold voltage VREFON IN1= IN2=IN3= IN4=1.8V 1.2 V
VREF OFF threshold voltage VREFOFF IN1= IN2=IN3= IN4=1.8V 0.8 V
BRAKE1 pin the current
BRAKE1 brake current IBRAKE 4 7 10 mA
d i ff e r e n c e b e t w e e n ‘ H ’ a n d ‘ L’

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 Silicore D5901

ELECTRICAL CHARACTERISTICS
(Unless specified particularly: Ta=2 5°C, BATT=2.4V V S Y S 1 =V S Y S 2 =3.2 V, V R E F =1.6V,
CHGVcc=0V, f C L K =88.2kHz)

Characteristics Symbol Test conditions Min Typ Max Unit

PWM power supply driv ing section
PSW sink current IPSW IN1=2.1V 10 13 17 mA
HVcc level shift voltage VSHLF I N 1 = 1 . 8 V, H V c c - O U T 1 F 0.35 0.45 0.55 V
H V c c = 9 V,
HVcc leak current IHLK 0 5 µA
V S Y S 1 = V S Y S 2 = B AT T = 0 V
PWM amplifier transfer gain GPWM I N 1 = 1 . 8 V, H V c c = 1 . 2 V ~ 1 . 4 V 1/60 1/50 1/40 1/kΩ
DC/DC converter section
(Error a mpl ifier section)
VSYS1 pin threshold voltage VSITH 3.05 3.2 3.35 V
EO pin output voltage H VEOH E I = 0 . 7 V, I o = - 1 0 0 µ A 1.4 1.6 V
EO pin output voltage L VEOL E I = 1 . 3 V, I o = 1 0 0 µ A 0.3 V

(Short-circuit protection)
S P RT p i n v o l t a g e ( n o r m a l ) VSPR EI=1.3V 0 0.1 V
S P RT p i n c u r r e n t 1 E O = H ISPR1 EI=0.7V 6 10 16 µA
S P RT p i n c u r r e n t 2 O F F = L ISPR2 E I = 1 . 3 V, O F F = 0 V 12 20 32 µA
S P RT p i n c u r r e n t 3 ( o v e r- v o l t a g e ) ISPR3 E I = 1 . 3 V, B AT T = 9 . 5 V 12 20 32 µA
S P RT p i n i m p e d a n c e RSPR 175 220 265 kΩ
S P RT p i n t h r e s h o l d v o l t a g e VSPTH E I = 0 . 7 V, C T = 0 V 1.1 1.2 1.3 V
O v e r- v o l t a g e p r o t e c t i o n d e t e c t VHVPR BSEN pin voltage 8.0 8.4 9.0 V

(Transistor driving section)

B AT T = C T = 1 . 5 V, I o = - 2 m A , a t
SW pin output voltage 1H VSW1H 0.78 0.98 1.13 V
s t a r t e r, V S Y S 1 = V S Y S 2 = 0 V
C T = 0 V, I o = - 1 0 m A , E I = 0 . 7 V,
SW pin output voltage 2H VSW2H 1.0 1.5 V
S P RT = 0 V
SW pin output voltage 2L VSW2L C T = 2 V, I o = 1 0 m A 0.3 0.45 V
C T = 4 7 0 p F, V S Y S 1 = V S Y S 2 = 0 V,
SW pin oscillating frequency 1 fSW1 65 80 95 kHz
at starter
SW pin oscillating frequency 2 fSW2 C T = 4 7 0 p F, C L K = 0 V 60 70 82 kHz
SW pin oscillating frequency 3 fSW3 CT=470pF 88.2 kHz
C T = 4 7 0 p F,
SW pin minimum pulse width TSWMIN 0.01 0.6 usec
EO=0.5→0.7Vsweep
Pulse duty at start DSW1 C T = 4 7 0 p F, V S Y S 1 = V S Y S 2 = 0 V 40 50 60 %
E I = 0 . 7 V, C T = 4 7 0 p F,
Max. pulse duty at self-running DSW2 70 80 90 %
CLK=0V
Max. pulse duty at CLK
DSW3 E I = 0 . 7 V, C T = 4 7 0 p F 65 75 85 %
synchronization

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CHMC
 Silicore D5901

ELECTRICAL CHARACTERISTICS
(Unless specified particularly: Ta=2 5°C, BATT=2.4V V S Y S 1 =V S Y S 2 =3.2 V, V R E F =1.6V,
CHGVcc=0V, f C L K =88.2kHz)

Characteristics Symbol Test conditions Min Typ Max Unit

(Dead time section)
DEAD pin impedance RDEAD 52 65 78 kΩ
DEAD pin output voltage VDEAD 0.78 0.88 0.98 V

(Interface section)
VSYS1
OFF pin threshold voltage VOFFH EI=1.3V V
-2.0
OFF pin bias current IOFF OFF=0V 75 95 11 5 µA
S TA RT pin ON threshold B AT T
voltage V S TA R T 1 V S Y S 1 = V S Y S 2 = 0 V, C T = 2 V -1.0 V
S TA RT p i n O F F B AT T
V S TA R T 2 V S Y S 1 = V S Y S 2 = 0 V, C T = 2 V -0.3 V
threshold voltage
S TA RT p i n b i a s c u r r e n t I S TA R T S TA RT = 0 V 13 16 19 µA
CLK pin threshold
VCLKTHH 2.0 V
Vo l t a g e H
CLK pin threshold
VCLKTHL 0.8 V
Vo l t a g e L
CLK pin bias current ICLK CLK=3.2V 10 µA
(Starter circuit section)
V S Y S 1 = V S Y S 2 = 0 V → 3 . 2 V,
St a r t e r s w i t c h i n g v o l t a g e VSTNH 2.3 2.5 2.7 V
S TA RT = 0 V
St a r t e r switching hysteresis
VSNHS S TA RT = 0 V 130 200 300 mV
width
D i s c h a rg e r e l e a s e v o l t a g e VDIS 1.63 1.83 2.03 V

Empty detection section

Empty detection voltage 1 VEMPT1 VSEL=0V 2.1 2.2 2.3 V
Empty detection voltage 2 VEMPT2 ISEL=-2µA 1.7 1.8 1.9 V
Empty detection
VEMNS1 VSEL=0V 25 50 100 mV
Hysteresis width 1
Empty detection
VEMNS2 ISEL=-2µA 25 50 100 mV
Hysteresis width 2
EMP pin output voltage VEMP Io=1mA, BSEN=1V 0.5 V
EMPpin output leak current IEMPL BSEN=2.4V 1.0 µA
BSEN pin input resistance RBSEN VSEL=0V 17 23 27
BSEN pin input leak
IBSENL V S Y S 1 = V S Y S 2 = 0 V, B S E N = 4 . 5 V 1.0 µA
current
SEL pin detection voltage V S E LT H V S E LT N = B AT T- S E L , B S E N = 2 V 1.5 V
SEL pin detection current I S E LT -2 µA

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CHMC
 Silicore D5901

ELECTRICAL CHARACTERISTICS
(Unless specified particularly: Ta=2 5°C, BATT=2.4V V S Y S 1 =V S Y S 2 =3.2 V, V R E F =1.6V,
CHGVcc=0V, f C L K =88.2kHz)

Characteristics Symbol Test conditions Min Typ Max Unit

Reset circuit section
VSYS1 reset threshold Ratio of VSYS1 voltage and
H S RT 85 90 95 %
voltage ratio e r r o r- a m p t h r e s h o l d v o l t a g e
Reset detection
VRSTHS 25 50 100 mV
hysteresis width
RESET pin output voltage VRST Io=1mA, VSYS1=VSYS2=2.8V 0.5 V
RESET pin pull up resistance RRST 72 90 108 kΩ
B AT T
AMUTE pin output voltage 1 VAMT1 Io=-1mA, VSYS1=VSYS2=2.8V -0.4
B AT T V
I o = - 1 m A , V S Y S 1 = V S Y S 2 = 0 V, B AT T
AMUTE pin output voltage2 VAMT2 -0.4
B AT T V
S TA RT = 0 V
AMUTE pin pull down
RAMT 77 95 11 3 kΩ
resistance
Operational a mplifier section
Input bias current IBIAS 300 nA
I n p u t o ff s e t v o l t a g e VOIOP -5.5 0 5.5 mV
High level output voltage VOHOP RL=OPEN 3.0 V
Low level output voltage VOLOP RL=OPEN 0.2 V
Output drive current (source) ISOU Output short to GND by 50Ω -3 -1 mA
Output drive current (sink) ISIN Output short to VSYS by 50Ω 0.4 0.7 mA
Open loop voltage gain Gvo V I N = - 7 5 d B V, f = 1 k H z 70 dB
Slew rate SR 0.5 V/usec

Charging circuit section

RCHG pin bias voltage VRCHG C H G V c c = 4 . 5 V, R C H G = 1 . 8 k Ω 0.71 0.81 0.91 V
RCHG pin output C H G V c c = 4 . 5 V,
RRCHG 0.75 0.95 1.2 kΩ
resistance RCHG=0.5 and 0.6V
SEL pin leak current 1 ISELLK1 C H G V c c = 4 . 5 V, R C H G = O P E N 1.0 µA
SEL pin leak current 2 ISELLK2 C H G V c c = 0 . 6 V, R C H G = 1 . 8 k Ω 1.0 µA
C H G V c c = 4 . 5 V, RCHG=0Ω,
SEL pin saturated voltage VSELCO 0.45 1.0 V
Io=300mA

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 Silicore D5901

APPLICATION CIRCUIT
Tra ve rse Spindle Foc us Tric king
1.0K
M M

33 32 31 30 29 28 27 26 25 24 23
BRAKE 1
34 22

MUTE 1
35 21
33µ
36 20
0.1uF

BTL BTL BTL BTL

47uF

MUTE 34
37 TSD - 19
47 Maximum +
De tec tion
CLK
38 - 18
+

39 -
+ - +
17
Powe r off

0.1uF
sta rter

100K -
40 + 16
Tria ngula r
wa ve
41 TSD
Pre -drive power supply
15
Over voltage

42 14
+
-
+-
+ - Control circuit
P ower supply +
43 13
B attery power supply

-
--+

44 12
+-
2200pF 100K

10pF

1 2 3 4 5 6 7 8 9 10 11
Filter
0.1uF

0.1uF

470pF
6.2K

0.022uF
DC/DC
Converte r
a pplica tion
47uF

100uF

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 Silicore D5901

OPERATING EXPLANATION
z H-bridge driver
(Gain setting)
Driver input resistance is 11 kΩ(typ.) for CH1,CH3 and CH4 and 7.5 kΩ(typ.)for CH2.
Calculate driver gain with the under-mentioned expression and set it.
CH1, CH3,CH4 Gv=20log|55k/(11k +R)| (dB)
CH2 Gv=20log|110k/(7.5k +R)| (dB)
R: External resistance
The power supply of drive output stage is HVcc termin al (36 pin) and th at of pre-drive
circuit is VSYS2 terminal (15 pin). Attach by-pass capacitor (approximately 0.1µF) to the
legs of this IC between the po wer supplies.
(Mute function)
Brake function and mu te function are assigned to CH1 and other channels of the four
channels respectiv ely.
When BRAKE1 terminal (23 pin) has been set to “H”, the output of CH1 becomes “L”
for both pin 31 and pin 32 and enters a Brake mode.
When MUTE2 terminal (21 pin) has been set to “H” , the output of CH2 is mu ted.
When MUTE34 terminal (19 pin)has been set to “L” th e output of CH3 and that of CH4
are muted si mu ltaneously.
(V R E F drop mute)
When the voltage impressed to V R E F terminal (16 pin) is 1.0V(typ .) or less, impedance
of driver output becomes “h igh”.
(Thermal shutdown)
When th e ch ip temp era ture has been 150°C(typ.) the ou tput current is cut.
When th e chip tempe rature has dropped to 120°C(typ.) the ou tput current begins to
flow.
z PWM power supply driv e un it
This unit detects a ma ximu m output level of drivers of four chan nels and performs the
PWM supply of load drive po wer supply (36 pin). This unit uses PNP transistor , coil,
Schottky diode and capacito r as ex ternal component.

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 Silicore D5901

33µ
10pF

0.1uF
47uF
100K 47
2200pF
44 37 36

z DC/DC converter
(Output voltage)
Booster circuit of 3.2V(typ.) can be config ured with external co mponents. This voltage
varies depending on addition of external components. How to set the voltage is as
follows:
V S Y S 1 =1.2×{[(R1*R3)/(R1+R3)+(R2*R4)/(R2+R4)]/(R2* R4/(R2 +R4)}

R1=External re sistan
R2=External re sistan
12 R3=35KΩ
R4=21KΩ
R1 R3

R2 R4
1.2V

(Short-circuit protection function)

When th e ou tput (6 pin) of error amplifier is “H”, if the voltage of SPRT terminal (8
pin) has reached 1.2V(typ .) upon charging th e terminal, switching of SW terminal (5
pin) is disabled . Time to disable switching depend s on a capacitor of th e SPRT
terminal (8 pin) and it can be calculated by th e under- mentioned expression:
t=C S P RT ×(V T H /I S P RT ) (sec) (V T H =1.2V, I S P RT =10µA )
(Soft-start function)
the soft-start is functioned by putting a capacitor between DEAD terminal (4 pin) and
GND. MAX duty can be changed by attaching resistance to 4-pin.
t=C D E A D ×R (sec) (R=65kΩ)

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 Silicore D5901

(Power-off operation)
SPRT terminal (8 pin) is charged by setting OFF terminal (40 pin) to “L”. Then,
switching of SW termi n al (5 pin) is terminated when the voltage of the SPRT terminal
(8 pin) has reached 1.2V(typ.). Time to disable switching depends on a capacitor of the
SPRT terminal (8 pin) and it can be calcu lated by the und er-mentioned expression:
t=C S P RT ×( V T H /I O F F ) (sec) (V T H =1.2V, I O F F =20µA)
(Over-voltage protection op eration)
When the voltage impressed to BSEN terminal (1 pin) has been 8.4V(typ .), SPRT
terminal (8 pin)is charged. Then, switching of SW termi n al (5 pin)is terminated when
the voltage of the SPRT terminal (8 pin) has reached 1.2V(typ.) Ti me to disable
switching depend s on a capacitor of the SPRT terminal (8 pin) an d it can be calculated
by the under-mentioned expression:
t=C S P RT ×( V T H /I H V ) (s ec) (V T H =1.2V, I H V =20 µA )
z “E mpty” detector unit
When the voltage impressed to BSEN termina l (1 pin) has been the detecting voltage is
2.2V or less, EMP terminal (35 pin) varies fro m “H” to “L” (open collector output).
Hysteresis of 50mV (t yp.) set to the detecting voltage to preven t th e output ch attering.
The detecting vo ltage varies depending on SEL terminal (42 pin) as follows:
SEL pin Detect voltage Return voltage
“L” 2.2V(typ.) 2.25V(typ.)
High-Z 1.8V(typ .) 1.85V(typ .)
z Reset circuit
Upon 90% (typ .) of DC/DC converter output voltage, RESET terminal (3 pin) varies
fro m “L” to “H” and AMUTE terminal (34 pin) changes fro m “H” to “L”. Hyste resis of
50mV (typ.) set to th e reset voltage to prevent the output chattering.
z Charging circuit
The power supply of the charging unit is CHGVcc terminal (41 pin) and it is
independent of any other circuits. Charging cu rrent is set by resistan ce between RCHG
ter minal (33 pin) and GND. The charging cu rrent takes constant current through SEL
terminal (42 pin)
This circuit has a private thermal shutdown circuit. When the chip temp e rature has
been 150°C (typ .), the charging current is cu t. When the chip temperature has dropped
to 120

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