CONTENTS

TITLE PAGE OVERVIEW GENERAL SAFETY RULES IN THE LABORATORIES AND SHOPS ELECTRICAL HAZARD CATEGORY EXPERIMENT NO. 1 EXPERIMENT NO. 2 EXPERIMENT NO. 3 EXPERIMENT NO. 4 EXPERIMENT NO. 5 EXPERIMENT NO. 6 EXPERIMENT NO. 7 EXPERIMENT NO. 8 CATHODE RAY OSCILLOSCOPE DIODE CHARACTERISTICS ZENER DIODE CHARACTERISTICS ZENER REGULATION WAVE RECTIFIER CLIPPER CIRCUITS BJT CIRCUIT FIXED-BIAS JFET CHARACTERISTICS

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OVERVIEW

In the advent of electronics technology one of the most remarkable electronic component invented by man is diode which is in the category of semiconductor the discovery of semiconductor also yield for another discoveries like transistor. That is why, it is important for an aspiring engineer to have a solid background about the two components. The manual is intended for third year level engineering students who wish to study electronics circuits this will also serve as a preparatory for electronics analysis and circuit design. It is compose of 8 experiments that will enhanced students ability to analyze the circuit and to properly used the electronics equipment with confidence.

GENERAL SAFETY RULES IN THE LABORATORIES AND SHOPS

1. Read carefully and understand the laboratory manuals instruction before performing any experiment. 2. Do not energize any equipment circuit or device without the permission and supervision of your instructor. 3. Ask for assistance from your instructor or technician whenever the operation of the instrument or equipment is not familiar to you. 4. Use or operate only properly guarded equipment. 5. Make sure the machine, equipment, tools, apparatus, are properly installed and are in good operating condition before performing any experiment or laboratory work. 6. Always wear personal safety gadget when operating a machine or equipment that requires so. 7. Do not wear rings watches, necktie or bracelet, etc. that could get caught in the moving parts of any machinery. 8. Handle all equipment, tools, instruments and devices with care. Consider them as though these are your own. 9. If you find that there is something wrong with the equipment. Stop the machine immediately by switching the off button. Never try to stop the machine with your hands or with any object. 10. Always maintain discipline, orderliness, and cleanliness (5s) in the laboratory and shop area. 11. Properly check out electrical outlets, switch (On and off buttons) of any mechanical equipment before leaving the laboratory and shop facilities. See to it that the machine and working are clear of any obstruction that may cause injury or damage.

Reference: TIP laboratory general safety guidelines

ELECTRICAL HAZARD CATEGORY

1. Electrical shock 2. Hazard in the electrical burns 3. Effects of blast which include pressure impact flying particles from vaporized conductors and first breathe consideration.

Electrical Shock
Electric shock occurs when the body becomes part of an electrical circuit. Shocks can happen in three ways. A person may come in contact with both conductors in a circuit. A person may provide a path between an ungrounded conductor and the ground. A person may provide a path between the ground and a conducting material that is in contact with an ungrounded conductor. The terms high voltage and low voltage are relative terms. In transmission-line terminology, "low voltage" is much higher than the 600 volts. At home, you would not think of 600 volts as being low voltage. Even when applied to 120-volt circuits, the term low voltage is deceiving. To some people low voltage means low hazard. Actually, low voltage does not necessarily mean low hazard, because potential difference is only one factor making up the dangerous effects of electricity.

THE EXTENT OF INJURY ACCOMPANYING ELECTRIC SHOCK DEPENDS ON THREE FACTORS

The amount of current through the body. The length of time a person is subjected to the current. The path of current through the body.

The amount of the current depends on the potential difference and the resistance. The effects of low current on the human body range from a temporary mild tingling sensation to death. An electric shock can injure you in either or both of the following. A severe shock can stop the heart or the breathing muscles, or both. The heating effects of the current can cause severe burns, especially at points where the electricity enters and leaves the body. Other effects include severe bleeding, breathing difficulty, and ventricular fibrillation. In addition, you may strike something, or have some other accident as a result of your response to the shock.

THE EFFECT OF ELECTRIC CURRENT:

CURRENT IN MILLIAMPERES

EFFECT

1 or less

No sensation, probably not notice

Mild sensation not painful 1-3 Painful shock 3-10 Muscular control could be lost or muscle clamping Respiratory paralysis 30-75 Ventricular fibrillation tissue begins to burn 75-4 amperes Heart muscle clamp and heart stop breathing Over 4 amperes

10-30

REFERENCE: http://www.lanl.gov/safety/electrical/docs/elec_hazard_awareness_study_guide.pdf

EXPERIMENT NO. 1 CATHODE RAY OSCILLOSCOPE

I.OBJECTIVE: To observe sine wave, square wave, triangular wave and ramp waveforms on the C.R.O. and to measure amplitude of the waveform.

II.BACKGROUND AND INFORMATION:

C.R.O. (Cathode Ray Oscilloscope) is the instrument which is used to observe signal waveforms. Signals are displayed in time domain i.e. variation in amplitude signal with respect to time is plotted on the CRO screen. X-axis represents time and Y-axis represents amplitude. It is used to measure amplitude, frequency, and phase of the waveforms. It is also used to observe shape of the waveform C.R.O. is useful for troubleshooting purpose. It helps us to find out gain of amplifier, test oscillator circuits. We can measure amplitude and frequency of the waveforms at the different test point in our circuit. Thus it helps us for fault finding procedure. In dual channel C.R.O. X-Y mode is available which is used to create. Lissajous patterns. Latest digital storage oscilloscope display voltage and frequency directly on the LCD and does not require any calculations. In this practical we will measure amplitude and frequency of the different waveforms like sine wave, square wave, triangular wave and ramp wave.

III.MATERIALS REQUIRED:

Instruments: Function generator, oscilloscope

IV.EXPERIMENTAL PROCEDURE: 1. Connect the function generator output at the input of C.R.O. at channel 1 or at channel 2.
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2. Select proper channel i.e. if signal is connected to channel 1 select CH1 and if signal is connected to channel 2 select CH2. 3. Adjust Time/Div knob to get sufficient time period displacement of the wave on the C.R.O. screen. 4. With fine tuning of Time/Div make the waveform steady on screen. 5. Use triggering controls if waveform is not stable. 6. Keep Volt/Div knob such that waveforms is visible on the screen without clipping. 7. Measure P-P reading along Y-axis. This reading multiplied with volt/div gives peak to peak amplitude of the ac i/p wave. 8. Measure horizontal division of one complete cycle. This division multiplied by time/div gives period of the i/p wave. 9. Calculate frequency using formula f=1/T. 10. Note down readings in the table. 11. Draw waveforms of sine wave, ramp and triangular in the give space. V.TABLE/DATA: VERTICAL VOLTS/DIV AMPLITUDE FUNCTION DIVISION (b) (P-P) (a) V=a*b SINE WAVE SQUARE WAVE
HORIZONTAL DIVISION (C)

TIME/DIV (d)

TIME T=c*d

FREQ. F=1/T

TRIANGULAR WAVE RAMP WAVE

Draw observed waveforms:

Sine wave: (Amplitude : ________

Frequency : ________)

Square wave: (Amplitude: ________

Frequency: ________)

Triangular wave: (Amplitude: ________ Frequency: ________)

Ramp wave: (Amplitude: ________

Frequency: ________)

VI.COMPUTATION:

VII. CONCLUSION:

VIII.QUESTIONS:

1. What is the use of C.R.O.?

2. What you will do to measure voltage which is greater than voltage limit of the C.R.O.?

3. What do you mean by dual Channel C.R.O.?

4. How to test whether C.R.O. probe is in working condition or not?

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EXPERIMENT NO. 2 DIODE CHARACTERISTICS

I.OBJECTIVE: To study the characteristic of silicon and germanium diode

II.BACKGROUND AND INFORMATION: Silicon and Germanium is a type of semiconductor with exactly four valence electrons. Semiconductor had electrical characteristics in between conductors and insulators. Diode has the characteristics to function as a conducting or insulating element.

III. MATERIALS REQUIRED:

Instrument: DC power supply, digital multimeter Components: silicon (D1N4001), germanium (D1N4148) Resistors: 1K, 1M Tools: Breadboard

IV. EXPERIMENTAL PROCEDURE:

Part A: Forward-bias diode characteristics

1. Construct the circuit of figure 1-a with the supply (E) is set at ) 0v. Record the measured value of the resistor.

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Figure 1-a 2. Increase the supply voltage until V D read 0.1v. Then measure the current ID and record the result in table 1-1 3. Repeat step 2 for the remaining settings of V D. Shown in the table 1.1 4. Replace the silicon diode by a germanium diode and complete table 1.2 5. Plot the graph on the space provided the I D versus VD for the silicon and germanium diodes. Complete the curve by extending the lower region of each curve to the intersection of the axis at ID=0mA and VD=0V. Part B. Reverse-bias diode characteristics

1. Construct the circuit of figure 1-b with E is set at 20v record the measured value of the resistor.

Figure 1-b 2. Measure the voltage VD. Measure the reverse saturation current, IS 3. Repeat the above step for germanium diode V.TABLE/DATA:

Part A (forward bias)

1. R (measured) = ________
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2. ID (measured) Fill in the table 1.1 and table 1.2

VD(V) ID(mA)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.75

Table 1.1 (silicon diode)

VD(V) ID(mA)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.75

Table 1.2 (Germanium diode)

Part B (reverse bias) 1. R(measured )= ________ 2. Silicon Diode = ________ VD (measured) = ________ IS (measured) = ________ 3. Germanium Diode = ________ VD (measured) = ________ IS (measured) = ________ Plot the/graph

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VI. COMPUTATION:

VII.CONCLUSION:

VIII.QUESTIONS:

1. How does the two curves differ? What are their similarities?

2. How do the result of step 2 compare to step 3? What are the similarities?

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EXPERIMENT NO. 3 ZENER DIODE CHARACTERISTICS

I.OBJECTIVE: To study the characteristics of zener diode. II.BAKCGROUND AND INFORMATION: A zener diode is a special kind of diode which allows current to flow in the forward direction in the same manner as an ideal diode, but will also permit it to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage , "zener knee voltage" or "zener voltage." The device was named after Clarence Zener, who discovered this electrical property. Many diodes described as "zener" diodes rely instead on avalanche breakdown as the mechanism. Both types are used. Common applications include providing a reference voltage for voltage regulators, or to protect other semiconductor devices from momentary voltage pulses.

III.MATERIALS REQUIRED: Instruments: DC power supply, Digital multimeter (DMM) Components: Diode Zener (IN1428) or equivalent Resistors: 0.1K, 1K (2pcs.) IV.EXPERIMENTAL PROCEDURE:

ZENER DIODE CHARACTERISTICS 1. Construct the circuit of figure 3. Set the DC supply to 0V and record the measured value of R.

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Figure 3. 2.Set the DC supply (E) to the values appearing in table 3 and measure both V Z and VR. Calculate zener current. IZ using ohms law given in the table and complete the table. 3. Plot IZ versus VZ using the data in table 3. V.TABLE/DATA:

1. R(measured)= ________ 2. Table 3. E (V) 0 1 3 5 7 9 11 13 15

VZ(V) VR(V) IZ=VR/R(

MEASURED)

VI.COMPUTATION:

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VII.CONCLUSION:

VIII.QUESTIONS:

1. Based on the experiment you perform can you explain how will you determine the zener voltage of an specified zener diode?

2. Give some example of application of zener diode.

3. What is the proper operating condition of zener diode?

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EXPERIMENT NO. 4 ZENER REGULATION

I.OBJECTIVE: To study the voltage regulation in zener diode regulation circuit.

II.BACKGROUND AND INFORMATION: The major application of zener diode is voltage regulation in dc power supplies, zener diode maintains a constant dc voltage under proper operating conditions, technically speaking zener must be operated in reverse-breakdown region.

III.MATERIALS REQUIRED:

Instruments DC power supply, function generator, digital multimeter (DMM)

Components Diodes: zener (10-v) Resistors: 1K (2pcs), 3.3K

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IV.EXPERIMENTAL PROCEDURE: ZENER DIODE REGULATION

1. Construct the circuit of figure 4. Record the measured value of each resistor.

Figure 4

2. Measure the value of VL and VR. Using the measured values calculate the value for current across R, IR, current across RL, IL, and current across zener diode I Z. 3. Change RL to 3.3K and repeat step 2. 4. Comment on the results obtained in step 2 and 3.

V.TABLE/DATA:

1. R(measured)= ________, 2. VR(measured)= ________, IR=VR/R= ________, IZ=IR-IL= ________

RL(measured)= _________ VL(measured)= ________ IL=VL/RL= ________

3. Change RL to 3.3K RL(measured)= ________ VR(measured)= ________, IR=VR/R= ________, IZ=IR-IL= ________ VL(measured)= ________ IL=VL/RL= ________

VI.COMPUTATION:
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VII.CONCLUSION:

VIII.QUESTIONS:

1. Design a zener voltage regulator to meet the following specifications:

The input voltage is 24 V dc, the load current is 35 mA, and the load voltage is 8.2 V.

2. In a zener diode regulator, What value of load resistance results in the maximum zener current?

3. How much voltage appears across a zener diode when it is forward-biased?

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EXPERIMENT NO. __ WAVE RECTIFIER

I.OBJECTIVES: To calculate draw the DC output voltages of half-wave and full-wave rectifiers.

II.BACKGROUND AND INFORMATION: Like the half wave circuit, a full wave rectifier circuit produces an output voltage or current which is purely DC or has some specified DC component. Full wave rectifiers have some fundamental advantages over their half wave rectifier counterparts. The average (DC) output voltage is higher than for half wave, the output of the full wave rectifier has much less ripple than that of the half wave rectifier producing a smoother output waveform. In a Full Wave Rectifier circuit two diodes are used, one for each half of the cycle. A transformer is used whose secondary winding is split equally into two halves with a common centre tapped connection, This configuration results in each diode conducting in turn when its anode terminal is positive with respect to the transformer centre point producing an output during both half-cycles, twice that for the half wave rectifier so it is 100% efficient.

III.MATERIALS REQUIRED:

Instrument DC power supply, Digital mulitmeter (DMM),function generator,oscilloscope Components

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Diode: Silicon (D1N4002) or equivalent 4pcs. Resistors: 2.2K,3.3K

IV.EXPERIMENTAL PROCEDURE: Half-Wave Rectification

1. Construct the circuit of figure 5. Set the supply to 9V p-p sinusoidal wave with the frequency of 1000Hz. Put the oscilloscope at function generator and sketch the input waveform obtained. 2. Put the oscilloscope probes across the resistor and sketch the output waveform obtained. Measure and record the DC level of the output voltage using the DMM.

Figure 5. 3. Reverse the diode of circuit of figure 5. Sketch the output waveform across the resistor. Measure and record the DC level of the output voltage. 4. Comment on the results obtained from step 2 and 3.

Full-Wave Rectification 1. Construct the circuit of figure 5-a. Set the supply to 9v p-p with the frequency of 1000Hz. Put the oscilloscope probes at function generator and sketch the input waveform obtained.

22

2. Put the oscilloscope across the resistor and sketch the output waveform obtained. Measure and record the DC level of the output voltage using the DMM.

Figure 5-a 3. Replace diodes D3 and D4 of circuit of figure 5-a by 2.2K. Draw the output waveform across the resistor. Measure and record the DC level of the output voltage. V.TABLE/DATA:

Half-Wave Rectification:

23

Reverse Diode:

Full Wave Rectification:

Diodes replaced with resistors

24

VI.COMPUTATION:

VII.CONCLUSION:

VII.QUESTIONS:

1. Explain how diode rectify the signal.

2. What is the average of a half wave rectified voltage with peak value of 10 V?
25

3. For a half-wave rectifier there is current through the load for approximately what percentage of the input cycle?

4. Describe the operation of a full-wave center-tapped rectifier.

EXPERIMENT NO. 6 CLIPPER CIRCUITS

I.OBJECTIVE: To calculate and measure the output voltages of clipper circuits.

II.BACKGROUND AND INFORMATION: Clipper or clamping is the one that clamp the signal to a different dc level. The network must have a capacitor, a diode, and a resistive element also known as dc restorer.

III.EXPERIMENTAL PROCEDURE:

Parallel clippers

1. Construct the circuit in figure 6. The input signal is an 8V p-p square wave at frequency of 1000Hz. Record the resistance value. 2. Set the oscilloscope in DC mode. 3. Put oscilloscope probes at function generator and sketch the input waveform obtained

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Figure 6 4. Sketch the output waveform obtained from the oscilloscope 5. Reverse the battery of the circuit and sketch the output waveform. 6. Change the input signal of the circuit of figure 6. To an 8V p-p sinusoidal signal with the same frequency of 1000Hz. Repeat step 3 and 4 for this circuit.

Series Clippers

1. Construct the circuit in figure 6-a. The input signal is an 8V p-p square wave at frequency of 1000Hz. Record the measured resistance value. 2. Set the oscilloscope in DC mode. 3. Put the oscilloscope probes at function generator and sketch the input waveform obtained.

Figure 6-a 4. Sketch the output waveform obtained from the oscilloscope. 5. Reverse the battery of the circuit and sketch the output waveform. 6. Change the input signal of the circuit of figure 6-a to an 8V p-p sinusoidal signal with the same frequency of 1000Hz Repeat step 3 and 4 for this circuit. V.TABLE/DATA Parallel Clippers Vin square wave
27

Series Clippers Vin, Square-wave

28

Vin, Square-wave battery reversed

VI.COMPUTATION:

VII.CONCLUSION:

29

VIII.QUESTIONS:

1. How does the series clipper differ from parallel clipper?

2. Discuss what happen to the full-wave rectifier if we remove the D3 and D4 diodes and replace it with two resistors?

EXPERIMENT NO. 7 BJT BIASING CIRCUITS-FIXED BIAS

30

I.OBJECTIVE:

To determine the quiescent operating conditions of the fixed bias BJT

II.BACKGROUND AND INFORMATION: Biasing a transistor means to turn on the device or to set the device into active condition, Bipolar junction transistor refer to the two charged carrier the n-carrier and the p-carrier. BJT is a three terminal device namely the emitter, base, collector. Base is always different type of material compared to both collector and emitter. Although the emitter and collector are made of the same material, they are not interchangeable, because they differ in the level of doping. The three terminal can be viewed as emitter emits charged carriers and collectors collect the charged carriers while the amount of charged carriers or current that is emitted by the emitter and collected by the collector is controlled by the base.

III.MATERIALS REQUIRED: Instruments 1 DC power supply 3 Digital Multimeter (DMM) Components Resistors 2.7K, 1M Transistors 2N3904, 2N4401

IV.EXPERIMENTAL PROCEDURE:

Fixed-Bias Configuration 1. Measure all resistor values (RB and RC) from circuit in figure 7 using DMM. Record them 2. Construct circuit as of figure 7 using 2N3904 transistor and V CC=20V. 3. Measure the voltages VBE and VRC. Record them. 4. Calculate the resulting base current, I B and collector current, IC using values obtained, Find
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5. Using the values obtained in step 4, calculate the values of V B, VC, VE, and VCE. 6. Energize the network in figure 7, Measure V B, VC, VE, and VCE. 7. How do the measured values (step 6) compare to the calculated values (step 5)? 8. Simply remove the 2N3904 transistor replace with 2N4401 transistor. 9. Then, measure the voltages VBE and VRC. Using the same equation, Calculate the values of I B and IC. From the values obtained, determine the value for 2N4401 transistor. 10. Compile all the data needed for both transistor in table 7-a.

Figure 7 11. Calculate the magnitude (ignore the sign) of the percent change in each quantity due to a change in transistor. 12. Place the results of your calculations in table 7-b.

V.TABLE/DATA:

1. RB(measured)= ________, 2. VBE (measured)= ________, 3. IB= ________, IC= ________,

RC(measured)= ________ VRC(measured)= ________ = ________

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4. VB (calculated) = ________, VE (calculated) = ________, Show all your works!

VC(calculated) = ________ VCE(calculated) = ________

5. VB (measured) = ________, VE (measured) = ________,

VC (measured) = ________ VCE (measured) = ________

6. Comparison of results from step 5 and step 6:

7. VBE (measured) = ________, IB= ________,

VRC (measured) = ________ IC= ________, = ________

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8. Transistor type VCE (V) IC (mA) IB (A)

2N3904 2N4401 Table 7-a 9.

10. % % IC % VCE % IB

Table 7-b
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VI. COMPUTATION

VII. CONCLUSION

VIII. QUESTIONS 1. Based on the configuration of fixed-bias what will happen if the base resistor is decreased to a very small resistance?

2. Discuss why BJT was called a current controlled carrier?

3. How will you set BJT into active region of operation?

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EXPERIMENT NO. 8 JFET CHARACTERISTICS

I.OBJECTIVES:

To establish the output and transfer characteristics for a JFET transistor.

II. BACKGROUND AND INFORMATIONS:

The bipolar junction transistor relies on the two types of charges: free electrons and holes. That is why it is called bipolar: the prefix bi stands for two on the other hand Field effect transistor ( FET). This type of transistor is unipolar because it depends on only one type of charge, either free electrons or holes. In other words, an FET has majority carrier but not minority carriers. In general, JFETs are more temperature stable than bipolar transistors. Furthermore JFETs are typically much smaller than bipolar transistors. This size difference makes them particularly suitable for use in ICs, where the size of each component is very critical. The depletion layers are actually wider near the top of p-type materials and narrower at the bottom. The reason for the change in the width can be understood by realizing that the drain current I D will produce a voltage drop along the length of the channel. With respect to the source, a more positive voltage is present as you move up the channel toward the drain end. Since the width of a depletion layer is proportional to the amount of reverse-bias voltage, the depletion layer of the p-n junction must be wider at the top, where the amount of reverse-bias voltage is greater. The pinch off voltage V P is the point at which further increases in VDS are offset by a proportional increase in the channels resistance. This means that if the channel resistance is increasing in direct proportion to V DS above VP, ID must remain the same above VP.

III. MATERIALS: Instruments: DC Power Supply: 9V and 25 V Digital multimeter Components: Resistors: 10K, 100, 1K Potentiometer: 1M, 10K
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IV. EXPERIMENTAL PROCEDURES: Part A: Measurement of the saturation current I DSS and pinch-off voltage VP for JFET 1. Referring to below, construct the circuit. The function of 10K resistor in the circuit is to protect the circuit if the 9v supply is connected with wrong polarity and the potentiometer is sets on its maximum value 2. Measure R value. 3. Vary the 1M potentiometer until VGS=0v. Measure ID at this time. (ID=IDSS) When VGS=0V. Record the ID measured.

4. Set VDS to 8V by varying the 10K potentiometer. Measure the voltage across R, V R. 5. Calculate the saturation current, IDSS using the measured resistor R and V R Record IDSS calculated.
6.

Maintain VDS at about 8V and reduce V GS until VR drops to 1mV. At this level, I D=VR/R, 1mV/100= 10A 0 mA. Record V GS value. The VGS value (when ID is 0mA) is the pinch-off voltage Vp.

7. Using the values I DSS and VP sketch transfer characteristics for the device using Shockleys equations (given in the result section) plot at least 5 points on the curve (Use V P<VGS<0V)

Part B: Output Characteristics (JFET) 1. Referring to the figure vary the two potentiometer until V GS=0v and VDS=0V. Determine ID from VR/R Using the measured value of R and record in table 5-1 2. Maintain VGS at 0V and increase VDS from 0V to 14V and record the calculated value I D at every 1V increment (refer to table 5-1) Be sure to use the measured value of R in your calculations).

37

3. Vary the 1M potentiometer until VGS=-1V. Maintaining VGS=-1V, Vary VDS through the levels of table 5-1 and record the calculated value of I D. 4. Repeat step 3 for the values of VGS in table 5-1. Discontinue the process if VGS exceeds VP. 5. Plot the output characteristics for the JFET. 6. Compare the IDSS and VP values obtained from step 5 with those measured in part A give comments. Part C: Transfer characteristics (JFET) 1. Using the data from table 5-1, record the values of I D for the range of VGS at VDS=3V in table 52. 2. Repeat step 1 for VDS=6V, 9V and 12V. 3. For each level of VDS, plot ID versus VGS on the graph. Plot each curve carefully and label each curve with the values of VDS.

V.TABLE /DATA: Part A:

2. R (measured)=________ 3. IDSS (measured)=________ 4. VR (measured)=________ 5. IDSS (calculated)=________ IDSS=ID=VR/R 6.VGS (measured)=VP=________ 7. ID=IDSS(1-VGS/VP)2

5 Points for plot (calculated)

VGS=0V, ID=IDSS= VGS=______ VGS=______ VGS=______ VGS=______ ID=______ ID=______ ID=______ ID=______
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VGS=______

ID=______

Note: VP<VGS<0

Sketch ID

VERSUS

VGS

Part B:

1. R (measured) from part 1:_______

TABLE 5-1 VGS (V) 0 VDS (V) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 4. Output characteristics -0.5 -1 ID(mA) -1.5 -2 -2.5

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Part C: Transfer Characteristics (JFET)

1.

VDS(V) VGS (V) -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 2. Plot of ID vs VGS VI. COMPUTATION:

3 ID(mA)

12

VII. CONCLUSION:

VIII. QUESTIONS:

40

1.

When a JFET is cut off, the depletion layers are?

2.

When the gate voltage becomes more negative in an n-channel JFET, the channel between the depletion layer_________________

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