Faculty of

Engineering
Electrical and Electronics
Technology Laboratory

Lab :
i. Lab 9 : Verification of Ohm’s Law on Diode
ii. Lab 10 : DC Analysis For Bipolar Junction Transistor ( BJT )
Lecturer : Dr. Nasri Sulaiman
Lecture Group : 3
Date : 18 March 2009
Name Matric Contribution
number
Mas Nur Syairah Bt Muhamad 150950 1. Type the lab report
Saad
2. Do the discussion
and
conclusion
Nurul Asmawanie Binti Ramli 150955 1. Do the result
 2. Do the calculation

Objectives

1. To determine voltage across diode and transistor.

2. To determine operational range of a BJT.

Equipments and components

1. Resistor 220kΩ, 100kΩ, 1kΩ

2. BJT BC108
3. Transistor Q2N3904

4. AC voltage source

5. Capacitor 2×10µF

6. Function generator

7. Multimeter

8. Oscillpscope

9. Connecting wire

10. Breadboard

11. Computer with PSpice software

Procedures

AC voltage across diode and transistor

1. Construct the circuit as in Figure 1 below in.

Figure 1

2. The circuit is stimulated.

3. The results are observed.
4. Then, another circuit as shown in Figure 2 below is constructed.

Figure 2

5. The circuit is stimulated and the result is observed.

DC Analysis For Bipolar Junction Transistor ( BJT )

1. Circuit is assembled as shown below on breadboard. All terminal

connections is ensured are correct. A transistor diagram and its symbol
is draw.
2. 20 mVpp sinusoidal wave is applied at the AC input terminal.
3. IB, I c, VCE, VB, VC, VBC is measured by using a multimeter.
4. The result is verified by the calculation.
5. The AC output signal observed using oscilloscope is draw.

Vcc = 9V

Ib Ic

RB = RC = 1kΩ
220kΩ
10µ C AC output signal
AC input Bce Vce C2 = 10µ
signal C1 E
Vbe

Results

AC voltage across diode and transistor

For Diode

Graph Idiode against V

For BJT Q2N3904

 Graph IC against VCE

Graph IC against VBE

DC Analysis For Bipolar Junction Transistor ( BJT )

For this experiment, transistor that we used is npn transistor

 IC IC

IB
IB
IE
IE

Transistor symbol
Transistor diagram

Transistor diagram and symbol

Experimental result:

a) IB = 0.0391 mA

b) IC = 1.6255 mA

c) VCE = 0.22 V

d) VB = 1.28 V

e) VC = 0.22 V

f) VBC = 4.0975 V

Calculated values:

i. VCC - IBRB - VBE = 0

IB=VCC-VBERB
=9 V-0.7 V220000 Ω

=0.03772 mA

ii. IC=βIB where β=100

=100 ×0.03772 mA

=3.772 mA
iii. VCE=VCC-ICRC
=9V-3.772 mA × 1000Ω
=5.228 V

iv. VB=VCC-IBRB
=9V-0.03772 mA × 220000Ω
=0.7016 V

v. VC=VCC-ICRC
=9V-3.772 mA × 1000 Ω
=5.228 V

vi. VBC=VCE-VBE
=5.228 V-0.7000
=4.528 V

Experimental Calculated Percentage

result result difference (%)
IB 0.0391 mA 0.03772 mA 3.66
IC 1.6255 mA 3.772 mA 56.91
VCE 0.22 V 5.228 V 95.79
VB 1.28 V 0.7016 V 82.44
VC 0.22 V 5.228 V 95.79
VBC 4.0975 V 4.528 V 9.51
The percentage difference between the experimental result
and the theoretical result

Measured value − Calculated value

Percentage difference = × 100%
Calculated value
Discussion

AC voltage across diode and transistor

1. For diode,the graph obtains from Spice show how the current varies
when the voltage is increasing.
2. The value of current is proportional to the voltage. It show forward
biased when the AC voltage range is bigger than zero. It show reverse
bias when the AC voltage is decrease to -100V and below.
3. For BJT Q2N3904,in this chart, you can see the cutoff region of
operation in the area of the chart with a steep slope. After this region is
the nearly horizontal region of active mode operation.
4. Ideally, the behavior of the chart in this region would be perfectly
horizontal, but since we are working with real components, nothing can
be perfect.

DC Analysis For Bipolar Junction Transistor ( BJT )

1. The BJT is the most common transistor. It consists of three sections of

semiconductors: an emitter, a base and a collector. In an npn-type BJT,
the emitter and the collector are made of n-type semiconductors and
the base is made of a p- type semiconductor. In a pnp-type BJT, it is the
other way round.
 2. The three sections of a BJT form two p-n junctions: the emitter-base
junction and the collector-base junction. Individually, these junctions
are not different from the p-n junction in a diode.
3. The unique characteristics of the BJT originate from an interaction
between these two junctions.
4. The operating mode of a BJT depends on how its junctions are biased.
5. The BJT is biased to operate in the active mode in applications where it
is used as an amplifier.
6. In the cut-off and saturation modes, the BJT behaves like an open and
closed switch, respectively.
7. Most BJTs in digital circuits (logic gates, memory) operate in these two
modes. The reverse active mode is rarely used and is listed here for
reference.
8. In a typical transistor circuit, the transistor is connected to an input
circuit and an output circuit or load. (Additional components are often
necessary to bias the BJT).
9. One of the terminals of the BJT (E, B or C) is connected to both the
input and the output circuit.
10. The configuration of a BJT in a circuit is named after this common
terminal. Thus, we speak of common-emitter, common-base and
common-collector configurations.

Schematic symbols for PNP- and NPN-type BJTs

Suggestion
 1. The demonstrator must using LCD projector to show how to do the
experiment.
2. The electrical and electronic components must be prepare in good
condition.
3. The demonstrator must use the microphone to give the explanation.
4. The value of the parts such as resistor, voltage source and others in
the circuit should be double checked before start the probe so that
all parts have the values that are correct.
5. We should not depend fully on the voltage value given by the
generator. Instead, we should double check the value with the
multimeter to get a more accurate voltage reading.

Conclusions

AC voltage across diode and transistor

As a conclusion, by using Ohm’s Law we can measured and determined

the value of current, voltage and resistor on diode. The forward-bias and the
reverse-bias properties of the p-n junction imply that it can be used as a
diode. A p-n junction diode allows electric charges to flow in one direction,
but not in the opposite direction; negative charges (electrons) can easily flow
through the junction from n to p but not from p to n and the reverse is true
for holes.

DC Analysis For Bipolar Junction Transistor ( BJT )

From this experiment, we are able to determine operational range of

bipolar junction transistor (BJT).

References
1. DC/AC Circuit and Electronics : Principles & Applications
Robert J. Herrick ( Purdue University West Lafayette, Indiana )
Published by Thomson Delmar Learning, 2003.
2. Electronics Fundamental: Circuits, Devices and Applications, 7th
Edition.
Thomas L.Floyd
Published by Pearson Prentice Hall. 2007
3. Lab manual EEE3100.
4. Giorgio Rizzoni, Principle and Applications of Electrical Engineering,
McGraw Hill, fourth edition.
5. http://en.wikipedia.org/wiki/Bipolar_junction_transistor