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of Electrical and Computer Engineering The University of Texas at Austin EE 382M.7 VLSI I Fall 2011
September 7, 2011
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Electrical Properties
Necessary to understand basic electrical properties of the MOS transmismtor to desig4n0 useful 80 100 circ6u0its Deal with non-ideal devices Ensure that the circuits are robust Create working layouts Predict delays and power consumption As circuit dimensions scale down, electrical effects b6e0come more important, even for digital circuits
1.65 GHz square wave from an 8H0DMI Interface (Source: Dunnihoo, EE Times Asia, 8/25/2005)
ECE Department, University of Texas at Austin Lecture 4. CMOS Transistor Theory J. A. Abraham, September 7, 2011 1 / 31
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Department of Electrical and Computer Engineering, The University of Texas at Austin J. A. Abraham, September 7, 2011
With sufficient voltage, region under Gate changes from p- to n-Type conducting path between the Source and Drain Inversion layer is field-induced junction, unlike a PN junction w40hich is metallurgical
Horizontal component of electric field associated with Vds > 0 is responsible for sweeping electrons from channel to drain Thres6h0old Voltage The gate voltage at which conduction takes place is the Threshold Voltage, Vt Current flow occurs when the drain to source voltage Vds > 0, a8n0d consists almost entirely of majority-carriers (electrons), that flow through the channel A depletion region insulates the channel from the substrate
ECE Department, University of Texas at Austin Lecture 4. CMOS Transistor Theory J. A. Abraham, September 7, 2011 4 / 31
If Vds > Vgs Vt , then Vgd < Vt , and the channel is pinched d6o0wn (the inversion layer no longer reaches the drain)
In this case, conduction mechanism of electrons voltage; as the negative accelerated towards the
is brought about by the drift under the influence of positive drain electrons leave the channel, they are drain
V80oltage across the pinchdown channel tends to remain fixed at (Vgs Vt ), and the channel current remains constant with increasing Vds
ECE Department, University of Texas at Austin Lecture 4. CMOS Transistor Theory J. A. Abraham, September 7, 2011 5 / 31
Department of Electrical and Computer Engineering, The University of Texas at Austin J. A. Abraham, September 7, 2011