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BANNARI AMMAN INSTITUTE OF TECHNOLOGY SATHYAMANGALAM 638 401 DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

LESSON PLAN FOR POWER ELECTONICS

Name of the Faculty Name of the Subject

Mr.R.Bharanikumar M.Prabha Maheswari Power Electronics

& Class Unit Date Time III Year EEE I

Topic
Construction, Characteristics Transistor of Operation, Power Diode

Switching and Power Period

Activity

Timing

Description
Few selected question to be asked by the Faculty member to recapitulate the knowledge and to know what basic knowledge the student possess. Faculty members must create the interest about the topic among the students with videos/animations/Objects. Topic will be introduced with the power point presentation and animation to give a simple review about the topic. For Notes of Lesson - refer Annexure I. Students are instructed to survey the main headings, sub headings and the words which are given in bold / italics and mentally convert that as questions. Page No : 33-39,122-131 For questions - refer Annexure II. Students are instructed to read elaborately to find the answers for the above framed questions. After reading students are asked to answer the following questions. What have you learnt from this topic? What is its importance? Why it is necessary to learn this topic? How is it related to your daily life? Students are asked to discuss among themselves with in the group.
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Evocation & Introduction

30 mins

Survey/Reading / Browsing

10 mins

Discussion &

5 mins

An open discussion can be done with the other groups for more clarification.

Clarifying doubts

Mindmap Summary Framing of Higher order questions

10 mins

For further more clarification student faculty interaction can take place. During discussion faculty should monitor all the groups and identify the students those who are not involved. The Students are asked to draw the mind map with their own imagination and creativity including the real time applications and the relevancy of the topic to the students. The Students are asked to summarize the contents in the form of Bulletins / Tabulation / Pictorial representation. The students are asked to find out the answers for the higher order thinking questions (application, analysis, synthesis and judgment). For higher order questions - refer Annexure III. The Faculty member will show/draw his/her mind map and the summary. The students compare theirs with that of the Faculty member and will note down the omissions in mind map and summary. For faculty mindmap and summary - refer Annexure IV. The Faculty member will use the following modes for assessing the students. Quiz Presentation by the students Match the following Short answers Objective questions/ MCQ Group discussion For MCQ - refer Annexure V. Refer Annexure VI (Applicable only for problematic papers) Problems can be given as homework or assignment.

5 mins

5 mins

Sharing of Facultys Mind map

5 mins

Assessment

5 mins

Problems

Text Book Title of Book/Author Page No.

the Electrical Technology by Muhammed H.Rashid From:33-39,122 To:131

Any Other Source, Please Specify


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Annexure II Survey What is the difference between signal diode and power diode? How is the power diode constructed? What is the cost of power diode and signal diode? What are the types of power diodes? What is a leakage current of diodes? Define softness factor. Compare PN junction diodes and Schottky diodes. What is the cut in voltage of diode?

Annexure III Framing of Higher order questions What is the effect of reverse recovery time? Give the applications of PN junction diodes. Draw the Reverse recovery chararacterstics of power diodes. Give the expression for and in BJT. List out the applications of BJT. Draw the FBSOA and RBSOA of BJT. Why is it preferable to use hard drive for BJT?

Annexure IV Mind Map Power Diode

Power inverters, choppers and rectifiers

P type and N type material are used to form the junction

Applications Construction

Used for high power applications

Power Diode

Operation Performance of the device

Reverse recovery Characteristics

Forward biasing Current increases beyond 0.7V Voltage will be constant at

Reverse biasing Current will be zero 4 Voltage will constant after Vbr

IRR= (2QRR di/dt)

Power Transistor
COMPARISION SIGNAL OF TRANSISTOR AND POWER TRANSFER

INPUT & OUTPUT CHARACTER CONSTRUCTI ON APPLICATION S: LOW SWITCHING INVERTER & CHOPPER OPERATION

POWER POWER TRANSISTO TRANSISTO R R

FALL TIME STORAGE TIME REVERSE RECOVERY TIME

USED FOR ENERGY CONVERSION APPLICATION dc-dc dc-ac

SWITCHING CHARACTER

ADVANTAGES: CONDUCTION LOSS SWITCHING FREQUENCY INPUT IMPEDENCE

Annexure IV Summary SUMMARY Construction Operation Switching Characteristics of Power Diode and Power Transistor Reverse recovery Characteristics Applications of Power Diodes and Power Transistor Annexure V Multiple Choice Questions: 1 Which of the following materials is not a semiconductor? (a) Silicone. (b) Germanium Gallium nitride. 2 (c) Gallium arsenide (d) ANS:

What is a typical conduction voltage for a silicon diode? ANS: (a) 0.25 (b) 0.7 (c) 0.3 (d) 0.1 What does a high resistance reading in both forward- and reverse-bias directions indicate? ANS: (a) A good diode (b) An open diode(c). A shorted diode(d) A defective ohmmeter Which terminal represents the control input of a bipolar transistor? ANS: (a)Base (b) Emitter (c) Collector (d) Gate
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At saturation the value of VCE is nearly ________, and IC = ________. ANS: (a)zero, zero(b) VCC, IC(sat)(c) zero, I(sat)(d) VCC, zero

Learning outcomes By learning this topic the students will be able to understand the basic construction, operation, switching characteristics of Power Diode and Power Transistor and they will be able to apply this knowledge wherever required.

INTRODUCTION

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