AO4407

30V P-Channel MOSFET

General Description
The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.

Product Summary
VDS ID (at VGS=-20V) RDS(ON) (at VGS=-20V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-5V) -30V -12A < 13m < 14m < 30m

* RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested

SOIC-8 Top View D D D D Bottom View D

G S S S

G S

Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C TA=25 C Power Dissipation B C TA=70 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25 C C TA=70 VGS ID IDM IAS, IAR EAS, EAR PD TJ, TSTG

Maximum -30 25 -12 -10 -60 26 101 3.1 2 -55 to 150

Units V V A A mJ W C

Symbol
t 10s Steady-State Steady-State

RJA RJL

Typ 31 59 16

Max 40 75 24

Units C/W C/W C/W

Rev.14.0: July 2013

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AO4407

Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V C TJ=55 VDS=0V, VGS= 25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, ID=-12A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-12A TJ=125 C VGS=-5V, ID=-7A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-10.5A IS=-1A,VGS=0V -1.7 -60 8.5 10 12 19 27 -0.72 -1 -4 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.2 24 VGS=-10V, VDS=-15V, ID=-12A 370 295 2.4 30 4.6 10 11 VGS=-10V, VDS=-15V, RL=1.25, RGEN=3 IF=-12A, dI/dt=100A/s 9.4 24 12 30 22 40 3.6 36 2600 13 14 19 30 -2.25 Min -30 -1 -5 100 -2.8 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.14.0: July 2013

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 -10V 60 -6V -5V 60 80 VDS=-5V

-ID (A)

40

-4.5V

-ID(A)

40

20

-4V VGS=-3.5V

20

125C

25C

0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 25 VGS=-5V RDS(ON) (m ) 20 15 10 VGS=-10V 5 0 0 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 Normalized On-Resistance

0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E)

1.6

1.4

VGS=-10V ID=-12A

1.2

VGS=-5V ID=-7A

17 5 2 10

0.8 0 25 50 75 100 125 150 175

0 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)

30 ID=-12A 25 RDS(ON) (m )

1.0E+01 1.0E+00

40
1.0E-01 IS (A) 125C

20

1.0E-02 1.0E-03

125C 25C

15 25C

10

1.0E-04 1.0E-05

5 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 4

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)

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AO4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=-15V ID=-12A 8 Capacitance (pF) 3000 2500 Ciss 2000 1500 1000 Coss 500 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 Crss 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30

-VGS (Volts)

1000.0

10000 TA=25C

100.0 ID (Amps) RDS(ON) limited Power (W) 10s 100s 1ms 1.0 TJ(Max)=150C TA=25C 10ms 10s DC 0.0 0.01 0.1 1 VDS (Volts) 10 100

1000

10.0

100

10

0.1

1 0.00001 0.001 0.1 10 1000

Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=75C/W

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1

PD Ton

T 100 1000

10

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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Gate Charge Test Circuit & Waveform

Vgs Qg

+
VDC

10V
VDC

DUT Vgs Ig

+ Vds -

Qgs

Qgd

Charge

Resistive Switching Test Circuit & Waveforms

RL Vds Vds

Vgs Rg

DUT

VDC

+ Vdd Vgs
t d(on) t on tr t d(off) toff tf

90%

10%

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR = 1/2 LIAR
2

BVDSS

VDC

+ Vdd Id

I AR

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Q rr = - Idt

Vds Isd Vgs Ig

Isd

IF

dI/dt I RM Vdd

VDC

+ Vdd Vds

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