MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N4400/D

General Purpose Transistors

NPN Silicon

2N4400 2N4401*
*Motorola Preferred Device

COLLECTOR 3 2 BASE 1 EMITTER

1 2 3

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 60 6.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 0.1 0.1 Vdc Vdc Vdc Adc Adc

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola SmallSignal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996

2N4400 2N4401
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) hFE 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 VCE(sat) VBE(sat) 20 20 40 40 80 50 100 20 40 0.75 150 300 0.4 0.75 0.95 1.2 Vdc Vdc

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4400 2N4401 hoe 2N4400 2N4401 hre hfe 20 40 1.0 250 500 30 mhos fT 2N4400 2N4401 Ccb Ceb hie 0.5 1.0 0.1 7.5 15 8.0 X 104 200 250 6.5 30 pF pF k ohms MHz

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 15 20 225 30 ns ns ns ns

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+ 30 V +16 V 0 2.0 V 1.0 to 100 s, DUTY CYCLE 2.0% 1.0 k < 2.0 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1.0 to 100 s, DUTY CYCLE 2.0% 1.0 k + 30 V 200

CS* < 10 pF

4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. TurnOn Time

Figure 2. TurnOff Time

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N4400 2N4401
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 300 500 QT

VCC = 30 V IC/IB = 10

QA

Figure 3. Capacitances

Figure 4. Charge Data

100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10

100 70 tr 50 30 20 tf VCC = 30 V IC/IB = 10

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

Figure 5. TurnOn Time

Figure 6. Rise and Fall Times

300 200 t s, STORAGE TIME (ns) ts = ts 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns)

100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2

100 70 50

10 7.0

30

5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N4400 2N4401
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C Bandwidth = 1.0 Hz
10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA

8.0 NF, NOISE FIGURE (dB)

6.0

6.0

4.0

4.0

2.0 0 0.01 0.02 0.05 0.1 0.2

2.0 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)

f, FREQUENCY (kHz)

Figure 9. Frequency Effects

Figure 10. Source Resistance Effects

h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C selected from both the 2N4400 and 2N4401 lines, and the This group of graphs illustrates the relationship between same units were used to develop the correspondingly numhfe and other h parameters for this series of transistors. To bered curves on each graph. obtain these curves, a highgain and a lowgain unit were
300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2

20 k 10 k 5.0 k

100 70 50 30 20 0.1 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2

2.0 k 1.0 k 500

0.2

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

10 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50

Figure 12. Input Impedance

2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2

20 10 5.0 2.0 1.0 0.1 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio 4

Figure 14. Output Admittance Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N4400 2N4401
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 1.0 0.7 0.5 0.3 0.2 0.1 55C 25C

0.2

0.3

0.5

0.7

1.0

2.0

3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

300

500

Figure 15. DC Current Gain

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

1.0 TJ = 25C

0.8

0.6

IC = 1.0 mA

10 mA

100 mA

500 mA

0.4

0.2

0 0.01

0.02 0.03

0.05 0.07 0.1

0.2

0.3

0.5 0.7 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0 7.0

10

20

30

50

Figure 16. Collector Saturation Region

1.0 TJ = 25C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C)

+ 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2

qVC for VCE(sat)

0.6

VBE @ VCE = 10 V

0.4

0.2

VCE(sat) @ IC/IB = 10

qVB for VBE

0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500

0 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500

Figure 17. On Voltages

Figure 18. Temperature Coefficients

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N4400 2N4401
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43

A R P
SEATING PLANE

L K D

X X G H V
1

C N N

SECTION XX

DIM A B C D F G H J K L N P R V

CASE 02904 (TO226AA) ISSUE AD

STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR

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Motorola SmallSignal Transistors, FETs and Diodes Device Data

*2N4400/D*

2N4400/D