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INTEGRATED CIRCUITS

DATA SHEET

TDA8920 2 50 W class-D power amplifier


Preliminary specication File under Integrated Circuits, IC01 1998 Dec 01

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


FEATURES High efficiency (90%) Operating voltage from 15 V to 30 V Very low quiescent current Low distortion Fixed gain of 30 dB High output power Output power limiter Good ripple rejection Usable as a mono amplifier in Bridge-Tied Load (BTL) or as a stereo Single-Ended (SE) amplifier Tracking possibility for oscillator frequency Differential audio inputs No switch-on or switch-off plops Short-circuit proof across the load Electrostatic discharge protection on all pins Thermally protected. QUICK REFERENCE DATA SYMBOL General VDD Iq(tot) operating supply voltage total quiescent current efciency Po = 10 W THD = 10% 15 85 25 50 90 PARAMETER CONDITIONS MIN. TYP. GENERAL DESCRIPTION APPLICATIONS Television sets Home-sound systems Multimedia systems.

TDA8920

The TDA8920 is a high efficiency class-D audio power amplifier. It can be used in a mono Bridge-Tied Load (BTL) or in a stereo Single-Ended (SE) configuration. The device operates over a wide supply voltage range from 15 V up to 30 V and consumes a very low quiescent current.

MAX. 30 60 31 37 50

UNIT

V mA %

Stereo single-ended conguration Po Gv(cl) Zi Vn(o) SVRR cs Po Gv(cl) Zi Vn(o) SVRR VO output power closed loop voltage gain input impedance noise output voltage supply voltage ripple rejection channel separation tbf 29 80 60 50 35 40 66 35 30 120 100 tbf W dB k V dB dB

Mono bridge-tied load conguration output power closed loop voltage gain input impedance noise output voltage supply voltage ripple rejection DC output offset voltage THD = 10% 130 36 60 140 W dB k V dB mV

1998 Dec 01

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


ORDERING INFORMATION TYPE NUMBER TDA8920J TDA8920TH PACKAGE NAME DBS17P HSOP20 DESCRIPTION plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) heatsink small outline package; 20 leads

TDA8920

VERSION SOT243-1 SOT418-1

BLOCK DIAGRAM

handbook, full pagewidth

VDD2 13

VDD1 5

BOOT1

IN1+ IN1

4 ANALOG 3 DIGITAL 7 OUT1

VSS1 LIM 16 PROTECTION

TDA8920J
12 VDD2 BOOT2

IN2+ IN2

14 ANALOG 15 DIGITAL 11 OUT2

VSS2 17 MODE MODE OSCILLATOR STABILIZER 9 STAB

2 SGND

1 OSC

10
MGR657

VSS1 VSS2

Fig.1 Block diagram (SOT243-1).

1998 Dec 01

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


PINNING SYMBOL OSC SGND IN1 IN1+ VDD1 BOOT1 OUT1 VSS1 STAB VSS2 OUT2 BOOT2 VDD2 IN2+ IN2 LIM MODE Note 1. The case of the package is connected to pins 8 and 10 (VSS1 and VSS2). Therefore no other voltage than VSS should be connected to the case or the heatsink. PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DESCRIPTION oscillator frequency adjustment signal ground (0 V) negative input channel 1 positive input channel 1 positive supply voltage 1 bootstrapping capacitor 1 output 1 negative supply voltage 1; note 1 internal stabilizer decoupling negative supply voltage 2; note 1 output 2 bootstrapping capacitor 2 positive supply voltage 2 positive input channel 2 negative input channel 2 current limiting adjustment mode select input
handbook, halfpage

TDA8920

OSC SGND IN1 IN1+ VDD1 BOOT1 OUT1 VSS1 STAB

1 2 3 4 5 6 7 8 9

TDA8920J

VSS2 10 OUT2 11 BOOT2 12 VDD2 13 IN2+ 14 IN2 15 LIM 16 MODE 17


MGR658

Fig.2 Pin configuration (SOT243-1).

1998 Dec 01

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


FUNCTIONAL DESCRIPTION The TDA8920 is a multi purpose audio power amplifier in class-D technology. It contains two independent amplifiers with high output power, high efficiency (90%), low distortion and a low quiescent current. The amplifiers can be connected in the following configurations: Mono bridge-tied load amplifier Stereo single-ended amplifiers. The amplifier can be switched in three operating modes with the mode select input: Standby mode, with a very low supply current (practically zero) Mute mode; the amplifiers are operational but the audio signal at the output is suppressed Operating mode (amplifier fully operational) with output signal. For suppressing plop noise the amplifier will remain automatically for approximately 500 ms in the mute mode before switching to operating mode. During this time the coupling capacitors at the input are fully charged. An example of a switching circuit for driving the mode select input is illustrated in Fig.3. Pulse Width Modulation (PWM) frequency The output signal of the amplifier is a PWM signal with a sample frequency of 500 kHz. The use of a second order LC filter in the application results in an analog audio signal across the loudspeaker. This switching frequency is fixed by an external resistor ROSC connected between pin OSC and pin SGND. With the resistor value given in the application diagram, the oscillating frequency is typical 500 kHz. The oscillator frequency can be calculated using: 5.10 f osc = ------------- [ Hz ] R OSC If two or more devices are used in the same audio system it is advised to have both devices working on the same oscillation frequency. This can be realized by connecting all OSC pins together.
standby/on R 9

TDA8920
Current limiting With an external resistor RLIM connected between pin LIM and VSS the maximum output current of the amplifiers can be set. If pin LIM is short-circuited to VSS, then the maximum output current is limited to 7 A. The relationship between maximum output current and resistor value is given by: 70.10 I O(max) = ------------------------------------------ [ A] 3 10.10 + R LIM Protections Protections are included to avoid the device being damaged at: Over-temperature Tj > 150 C Short-circuit of the loudspeaker terminals: when short-circuited the power dissipation is limited A maximum current limiter which limits the maximum output current to 7 A, or to the value set by RLIM. During limiting the current is measured and when the current is higher than 7 A, the amplifier is switched off within 3 s and every 20 ms the IC tries to restart. The dissipation will be low because of this low duty cycle. ESD protection (human body model: 3000 V and machine model: 300 V).
3

handbook, halfpage +5 V

R pin MODE

mute SGND
MGR660

Fig.3 Mode select input drive circuit.

1998 Dec 01

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDD Vms Vsc IOSM IORM Ptot Tstg Tamb Tvj PARAMETER supply voltage mode select switch voltage short-circuit voltage of output pins non-repetitive peak output current repetitive peak output current total power dissipation storage temperature operating ambient temperature virtual junction temperature CONDITIONS with respect to SGND 55 40 MIN.

TDA8920

MAX. 30 5.5 30 10 7.5 60 +150 +85 150 V V V A A W

UNIT

C C C

THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-c) PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 40 10 UNIT K/W K/W

QUALITY SPECIFICATION Quality according to SNW-FQ-611-part E, if this type is used as an audio amplifier. SWITCHING CHARACTERISTICS VDD = 25 V; Tamb = 25 C; measured in Fig.5; unless otherwise specied. SYMBOL fosc VOSC(p-p) oscillator frequency voltage at tracking point (peak-to-peak value) PARAMETER MIN. 400 TYP. 500 1.75 MAX. 600 V UNIT kHz

1998 Dec 01

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


DC CHARACTERISTICS VDD = 25 V; Tamb = 25 C; measured in Fig.5; unless otherwise specied. SYMBOL Supplies VDD Iq(tot) Istb VOO VOO Vms Ims Vth1+ Vth1 Vms(hys1) Vth2+ Vth2 Vms(hys2) Notes 1. The circuit is DC adjusted at VDD = 15 V to 30 V. 2. Referenced to SGND (0 V). supply voltage range total quiescent current standby current note 1 15 25 50 0.2 200 200 PARAMETER CONDITIONS MIN. TYP.

TDA8920

MAX. 30 60 50

UNIT

V mA A

Amplier outputs output offset voltage delta output offset voltage on and mute on mute 50 30 mV mV

Mode select input; see Fig.4 input voltage range input current threshold voltage threshold voltage hysteresis (Vth1+) (Vth1) threshold voltage threshold voltage hysteresis (Vth2+) (Vth2) mute on; note 2 on mute; note 2 note 2 Vms = 5.5 V standby mute; note 2 mute standby; note 2 0 1 3 5.5 tbf 2 4 V A V V mV V V mV

handbook, full pagewidth

on

mute

standby Vms(hys1) Vth1 Vth1+ Vms(hys2) Vth2 Vth2+


MGR662

Vms

Fig.4 Mode select transfer characteristic.

1998 Dec 01

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


AC CHARACTERISTICS Stereo single-ended application VDD = 25 V; RL = 8 ; fi = 1 kHz; Tamb = 25 C; measured in Fig.5; unless otherwise specied. SYMBOL Po PARAMETER output power CONDITIONS THD = 0.5% THD = 10% THD = 0.5%; Vp = 30 V THD = 10%; Vp = 30 V THD total harmonic distortion Po = 1 W; note 1 fi = 1 kHz fi = 10 kHz Gv(cl) SVRR closed loop voltage gain efciency supply voltage ripple rejection Po = tbf W; fi = 1 kHz; note 2 on; note 3 on; note 4 mute; note 3 standby; note 3 Zi Vn(o) input impedance noise output voltage on; note 5 on; note 6 mute; note 7 cs Gv Vo CMRR Notes channel separation channel unbalance output signal mute; note 9 common mode rejection ratio Vi(CM)(rms) = 1 V note 8 29 85 tbf 80 50 0.1 0.2 30 90 60 tbf 60 80 120 100 tbf 100 tbf 65 MIN. tbf tbf TYP. 30 35 40 50

TDA8920

MAX.

UNIT W W W W % % dB % dB dB dB dB k V V V dB dB V dB

0.15 31 200 1 500

1. Total harmonic distortion is measured in a bandwidth of 22 Hz to 22 kHz, using an 11th-order low-pass filter. When distortion is measured using a lower order low-pass filter a significantly higher value will be found, due to the switching frequency outside the audio band. 2. Output power measured across the loudspeaker load. 3. Vripple = Vripple(max) = 2 V (p-p); fi = 100 Hz; Rs = 0 . 4. Vripple = Vripple(max) = 2 V (p-p); fi = 1 kHz; Rs = 0 . 5. B = 22 Hz to 22 kHz; Rs = 0 . 6. B = 22 Hz to 22 kHz; Rs = 10 k. 7. B = 22 Hz to 22 kHz; independent of Rs. 8. Po = tbf W; Rs = 0 . 9. Vi = Vi(max) = 1 V (RMS).

1998 Dec 01

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


Mono bridge-tied load application VDD = 25 V; RL = 8 ; fi = 1 kHz; Tamb = 25 C; measured in Fig.6; unless otherwise specied. SYMBOL Po PARAMETER output power CONDITIONS THD = 0.5% THD = 10% THD = 0.5%; Vp = 30 V THD = 10%; Vp = 30 V THD total harmonic distortion Po = 1 W; note 1 fi = 1 kHz fi = 10 kHz Gv(cl) SVRR closed loop voltage gain efciency supply voltage ripple rejection Po = tbf W; fi = 1 kHz; note 2 on; note 3 on; note 4 mute; note 3 standby; note 3 Zi Vn(o) input impedance noise output voltage on; note 5 on; note 6 mute; note 7 Vo CMRR Notes output signal common mode rejection ratio mute; note 8 Vi(CM)(rms) = 1 V 35 tbf tbf 80 40 0.1 0.2 36 tbf 66 66 60 140 tbf 140 65 MIN. tbf tbf TYP. 100 130 150 190

TDA8920

MAX. 0.15 37 280 tbf

UNIT W W W W % % dB % dB dB dB dB k V V V mV dB

1. Total harmonic distortion is measured in a bandwidth of 22 Hz to 22 kHz, using an 11th-order low-pass filter. When distortion is measured using a lower order low-pass filter a significantly higher value will be found, due to the switching frequency outside the audio band. 2. Output power measured across the loudspeaker load. 3. Vripple = Vripple(max) = 2 V (p-p); fi = 100 Hz; Rs = 0 . 4. Vripple = Vripple(max) = 2 V (p-p); fi = 1 kHz; Rs = 0 . 5. B = 22 Hz to 22 kHz; Rs = 0 . 6. B = 22 Hz to 22 kHz; Rs = 10 k. 7. B = 22 Hz to 22 kHz; independent of Rs. 8. Vi = Vi(max) = 1 V (RMS).

1998 Dec 01

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


APPLICATION AND TEST INFORMATION

TDA8920

handbook, full pagewidth

VDD VDD2 13 VDD1 5 6 BOOT1 CBOOT1 100 nF IN1+ IN1 4 ANALOG 3 DIGITAL 7 OUT1 100 H 390 nF VSS1 LIM 16 PROTECTION 8 47 nF 100 nF 2200 F

25 V

Vi1 SGND

100 nF

TDA8920J
12 VDD2 BOOT2 CBOOT2 47 nF 11 OUT2 100 H 390 nF VSS2 8 0V SGND

Vi2 100 nF

RLIM IN2+ 14 IN2 15 ANALOG DIGITAL

MODE 17 MODE OSCILLATOR STABILIZER

STAB CSTAB

2 SGND Vms

1 OSC

10

100 nF

2200 F

VSS1 VSS2 VSS SGND

25 V

ROSC 10 k

MGR663

Maximum value of CBOOT = tbf nF. Filter coil is type tbf, Rs < tbf . The case of the package is internally connected to VSS.

Fig.5 Application circuit for stereo single-ended application (SOT243-1).

1998 Dec 01

10

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier

TDA8920

handbook, full pagewidth

VDD VDD2 13 VDD1 5 6 BOOT1 CBOOT1 100 nF 2200 F

25 V

100 nF Vi

IN1+ IN1

4 ANALOG 3 DIGITAL 7 OUT1

47 nF 100 H 390 nF VSS1 8

100 nF

LIM 16 RLIM IN2+ 14 IN2 15

PROTECTION

TDA8920J
12 VDD2 BOOT2 CBOOT2 47 nF 11 OUT2 100 H 390 nF VSS2 0V SGND

ANALOG

DIGITAL

MODE 17 MODE OSCILLATOR STABILIZER

STAB CSTAB

2 SGND Vms

1 OSC

10

100 nF

2200 F

VSS1 VSS2 VSS SGND

25 V

ROSC 10 k

MGR664

Maximum value of CBOOT = tbf nF. Filter coil is type tbf, Rs < tbf . The case of the package is internally connected to VSS.

Fig.6 Application circuit for mono bridge-tied load application (SOT243-1).

1998 Dec 01

11

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


PACKAGE OUTLINES DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

TDA8920

SOT243-1

non-concave D x Dh

Eh

view B: mounting base side

A2

B j E A

L3

Q c v M

1 Z e e1 bp w M

17 m e2

5 scale

10 mm

DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT243-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A 17.0 15.5 A2 4.6 4.2 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 e1 e2 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.4 x 0.03 Z (1) 2.00 1.45

1.27 5.08

ISSUE DATE 95-03-11 97-12-16

1998 Dec 01

12

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier

TDA8920

HSOP20: heatsink small outline package; 20 leads

SOT418-1

E D x

A X

c y E2 HE v M A

D1 D2 1 pin 1 index Q A2 E1 A1 (A3) Lp detail X 20 Z e 11 bp w M A 10

5 scale

10 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A A1 max. 3.7 0.3 0.1 A2 3.5 3.2 A3 0.35 bp c D(1) D1 D2 1.1 0.9 E(1) 11.1 10.9 E1 6.2 5.8 E2 2.9 2.5 e 1.27 HE 14.5 13.9 Lp 1.1 0.8 Q 1.7 1.5 v w x y 0.1 Z 2.5 2.0 8 0

0.53 0.32 16.0 13.0 0.40 0.23 15.8 12.6

0.25 0.25 0.03

Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT418-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION

ISSUE DATE 97-11-03 98-02-25

1998 Dec 01

13

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


SOLDERING Introduction This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Through-hole mount packages SOLDERING BY DIPPING OR BY SOLDER WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. MANUAL SOLDERING Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. Surface mount packages REFLOW SOLDERING Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. 1998 Dec 01 14 MANUAL SOLDERING

TDA8920
Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. WAVE SOLDERING Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. For packages with leads on two sides and a pitch (e): larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.

Philips Semiconductors

Preliminary specication

2 50 W class-D power amplier


Suitability of IC packages for wave, reow and dipping soldering methods

TDA8920

SOLDERING METHOD MOUNTING PACKAGE WAVE Through-hole mount DBS, DIP, HDIP, SDIP, SIL Surface mount BGA, SQFP HLQFP, HSQFP, HSOP, HTSSOP, SMS PLCC(4), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. 2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications. suitable(2) not suitable not not not suitable(3) recommended(4)(5) recommended(6) suitable REFLOW(1) suitable suitable suitable suitable suitable DIPPING suitable

1998 Dec 01

15

Philips Semiconductors a worldwide company


Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com

For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1998

SCA60

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

545102/25/01/pp16

Date of release: 1998 Dec 01

Document order number:

9397 750 04343

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