MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N2369/D

Switching Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N2369 2N2369A*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current (10 ms pulse) Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 100C Derate above 100C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC(Peak) IC PD PD TJ, Tstg Value 15 40 40 4.5 500 200 0.36 2.06 0.68 6.85 65 to +200 Unit Vdc Vdc Vdc Vdc mA mA Watt mW/C Watts mW/C C

CASE 2203, STYLE 1 TO18 (TO206AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 486 147 Unit C/W C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) Collector Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mA, IB = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) Base Current (VCE = 20 Vdc, VBE = 0) 1. Pulse Test: Pulse Width 2N2369 2N2369A ICES 2N2369A IB 2N2369A 0.4 V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICBO 0.4 30 0.4 40 15 40 4.5 Vdc Vdc Vdc Vdc

mAdc

mAdc mAdc

v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola SmallSignal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996

2N2369 2N2369A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = 55C) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = 55C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = 55C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE 2N2369 2N2369A 2N2369 2N2369A 2N2369A 2N2369A 2N2369 VCE(sat) 2N2369 2N2369A 2N2369A 2N2369A 2N2369A VBE(sat) All Types 2N2369A 2N2369A 2N2369A 2N2369A 0.70 0.59 0.85 1.02 1.15 1.60 0.25 0.20 0.30 0.25 0.50 Vdc 40 20 20 30 20 20 120 120 Vdc

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 500 4.0 4.0 MHz pF pF

SWITCHING CHARACTERISTICS
Storage Time (IC = IB1 = 10 mAdc, IB2 = 10 mAdc) TurnOn Time (IC = 10 mAdc, IB1 = 3.0 mA, IB2 = 1.5 mA, VCC = 3.0 Vdc) TurnOff Time (IC = 10 mAdc, IB1 = 3.0 mA, IB2 = 1.5 mA, VCC = 3.0 Vdc) 1. Pulse Test: Pulse Width ts ton toff 13 12 18 ns ns ns

v 300 ms, Duty Cycle v 2.0%.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N2369 2N2369A
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
+10.6 V 0 1.5 V t1 3V 270 +10.75 V 0 9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% t1 270

< 1 ns

3.3 k

Cs* < 4 pF

3.3 k

Cs* < 4 pF

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

Figure 1. ton Circuit 10 mA

Figure 3. toff Circuit 10 mA

+10.8 V 2 V 0

t1

10 V

95 +11.4 V 0 8.6 V

t1

10 V

95

< 1 ns

1k

Cs* < 12 pF

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

< 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 s DUTY CYCLE = 2%

1k 1N916

Cs* < 12 pF

Figure 2. ton Circuit 100 mA

Figure 4. toff Circuit 100 mA

* Total shunt capacitance of test jig and connectors. TURNON WAVEFORMS Vin 0 ton 10% Vout 90% Vin 3.3 k 3.3 k 0.0023 F 0.005 F VBB + 0.1 F 50 0.0023 F 0.005 F 0.1 F +V =3V CC 220 0.1 F Vout 0 TO OSCILLOSCOPE INPUT IMPEDANCE = 50 RISE TIME = 1 ns TURNOFF WAVEFORMS Vin Vout toff 10% 90% VBB = +12 V Vin = 15 V

PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 PW 300 ns DUTY CYCLE < 2%

50

Figure 5. TurnOn and TurnOff Time Test Circuit

6 5 4 CAPACITANCE (pF) 3 Cib Cob TJ = 25C LIMIT TYPICAL SWITCHING TIMES (nsec)

100 50 tr (VCC = 3 V) tf tr 10 5 ts VCC = 10 V F = 10 VCC = 10 V VOB = 2 V

20

td

1 0.1

2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100

Figure 6. Junction Capacitance Variations

Figure 7. Typical Switching Times

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N2369 2N2369A
500 VCC = 10 V 25C 100C QT, F = 10 QT, F = 40 +5 V 100 0 50 QA, VCC = 10 V 20 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 QA, VCC = 3 V V < 1 ns 4.3 k 270 VALUES REFER TO IC = 10 mA TEST

200 CHARGE (pC)

t1

3V 10 pF MAX

Cs* < 4 pF

PULSE WIDTH (t1) = 5 s DUTY CYCLE = 2%

Figure 9. QT Test Circuit

Figure 8. Maximum Charge Data

C < COPT C COPT TIME

C=0

+6 V 0 4 V

t1

10 V

980

< 1 ns

500

Cs* < 3 pF

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

Figure 10. TurnOff Waveform

VCE , MAXIMUM COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 11. Storage Time Equivalent Test Circuit

1.0 TJ = 25C IC = 3 mA 0.6 IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA

0.8

0.4

0.2 0.02

0.05

0.1

0.2

0.5 1 IB, BASE CURRENT (mA)

10

20

Figure 12. Maximum Collector Saturation Voltage Characteristics

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N2369 2N2369A
200 hFE , MINIMUM DC CURRENT GAIN TJ = 125C 100 75C 25C 15C 50 55C VCE = 1 V

TJ = 25C and 75C

20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 100

Figure 13. Minimum Current Gain Characteristics

1.4 V(sat) , SATURATION VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 F = 10 TJ = 25C COEFFICIENT (mV/ C) MAX VBE(sat)

1.0 0.5 0 0.5 1.0 1.5 VB for VBE(sat) MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 2.0 2.5 0 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100
VC VB

VC for VCE(sat)
APPROXIMATE DEVIATION FROM NOMINAL 55C to +25C 0.15 mV/C 0.4 mV/C 25C to 125C 0.15 mV/C 0.3 mV/C

(25C to 125C) (55C to +25C)

MIN VBE(sat)

(55C to +25C) (25C to 125C)

Figure 14. Saturation Voltage Limits

Figure 15. Typical Temperature Coefficients

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N2369 2N2369A
PACKAGE DIMENSIONS

A B E C T F P L K
SEATING PLANE

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. 5. DIMENSION E INCLUDES THE TAB THICKNESS. (TAB THICKNESS IS 0.51(0.002) MAXIMUM). DIM A B C D E F G H J K L M N P INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 0.030 0.016 0.019 0.100 BSC 0.036 0.046 0.028 0.048 0.500 0.250 45 _BSC 0.050 BSC 0.050 MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.406 0.533 0.762 0.406 0.483 2.54 BSC 0.914 1.17 0.711 1.22 12.70 6.35 45_BSC 1.27 BSC 1.27

D 3 PL 0.36 (0.014) N H
1 2 3 M

T A

STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR

N G

CASE 2203 (TO206AA) ISSUE R

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 18004412447 or 6023035454 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE 6022446609 INTERNET: http://DesignNET.com

JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, 6F SeibuButsuryuCenter, 3142 Tatsumi KotoKu, Tokyo 135, Japan. 038135218315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298

2N2369/D Motorola SmallSignal Transistors, FETs and Diodes Device Data

*2N2369/D*

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.