FJAF6812

FJAF6812
High Voltage Color Display Horizontal Deflection Output
High Collector-Base Breakdown Voltage : BVCBO = 1500V High Switching Speed : tF(typ.) =0.1s For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1500 750 6 12 24 60 150 -55 ~ 150 Units V V V A A W C C

* Pulse Test: PW=300s, duty Cycle=2% Pulsed

Electrical Characteristics TC=25C unless otherwise noted

Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500A, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30 IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V s s Min Typ Max 1 10 1 Units mA A mA V

* Pulse Test: PW=20s, duty Cycle=1% Pulsed

Thermal Characteristics TC=25C unless otherwise noted

Symbol RjC Parameter Thermal Resistance, Junction to Case Typ 1.4 Max 2.08 Units C/W

2001 Fairchild Semiconductor Corporation

Rev. B1, May 2001

FJAF6812

Typical Characteristics
11

100
10

Ib=1.8A

Ib=1.6A

IC [A], COLLECTOR CURRENT

9 8 7 6 5 4 3 2 1 0 0 2 4 6 8

Ib=1.4A Ib=1.2A Ib=1.0A Ib=800mA Ib=600mA Ib=400mA Ib=200mA

125 C 75 C

VCE = 5V

hFE, DC CURRENT GAIN

Ta= - 25 C 25 C
10

10

12

14

1 0.1

10

VCE [V], COLLECTOR-EMITTER VOLTAGE

IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristics

Figure 2. DC Current Gain

100

100

VCE(sat) [V], SATURATION VOLTAGE

IC = 5IB

IC = 3IB

VCE(sat) [V], SATURATION VOLTAGE

10

10

125 C
1

125 C
1

75 C 25 C
0.1
o

75 C

0.1
o

25 C Ta = - 25 C

Ta = - 25 C

0.01 0.1

10

0.01 0.1

10

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Collector-Emitter Saturation Voltage

14

10

VCE = 5V
12

IC [A], COLLECTOR CURRENT

tSTG

tSTG [s], STORAGE TIME

10

tF [s], FALL TIME

125 C

tF
0.1

75 C
2

25 C

Ta = - 25 C
0 0.0 0.5 1.0 1.5
0.01 -0.1

RESISTIVE LOAD Vcc = 200V IC = 7A IB1 = 1.4A

-1 -10

VBE [V], BASE-EMITTER VOLTAGE

IB2 [A], REVERSE BASE CURRENT

Figure 5. Base-Emitter On Voltage

Figure 6. Switching Time

2001 Fairchild Semiconductor Corporation

Rev. B1, May 2001

FJAF6812

Typical Characteristics (Continued)

100 30

IC (Pulsed)

TC = 25 C Single Pulse
10ms 1ms 300s

IC [A], COLLECTOR CURRENT

10

IC (DC)

IC [A], COLLECTOR CURRENT

10

0.1

IB1 = 1.2A, IB2 = - 4A VBE (off) = - 3V L = 200H Single Pulse

1

0.01 1 10 100 1000 5000

10

100

1000

5000

VCE [V], COLLECTOR-EMITTER VOLTAGE

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Forward Bias Safe Operating Area

Figure 8. Reverse Bias Safe Operating Area

80

70

PC [W], POWER DISSIPATION

60

50

40

30

20

10

0 0 25 50
o

75

100

125

150

175

TC [ C], CASE TEMPERATURE

Figure 9. Power Derating

2001 Fairchild Semiconductor Corporation

Rev. B1, May 2001

FJAF6812

Package Demensions

TO-3PF
5.50 0.20

4.50 0.20

15.50 0.20

3.60 0.20

3.00 0.20 (1.50)

10.00 0.20

10

26.50 0.20

23.00 0.20

16.50 0.20

14.50 0.20

0.85 0.03

16.50 0.20

2.00 0.20

14.80 0.20

2.00 0.20 2.00 0.20 4.00 0.20 0.75 0.10

+0.20

2.00 0.20

2.50 0.20

2.00 0.20

3.30 0.20

5.45TYP [5.45 0.30]

5.45TYP [5.45 0.30]

0.90 0.10

+0.20

3.30 0.20

2.00 0.20

5.50 0.20

1.50 0.20

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. B1, May 2001

22.00 0.20

TRADEMARKS
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DISCLAIMER

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H2