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AO4712

30V N-Channel MOSFET

SRFET
General Description
SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

TM

Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 13A < 11m < 14m

100% UIS Tested 100% Rg Tested

SOIC-8 Top View D D D D Bottom View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S

G S S S

Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25 C Power Dissipation B TA=70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
C

Maximum 30 12 13 10 68 15 11 3.1 2 -55 to 150

Units V V A A mJ W C

VGS TA=25 C TA=70 C ID IDM IAS, IAR EAS, EAR PD TJ, TSTG

Symbol
t 10s Steady-State Steady-State

RJA RJL

Typ 32 60 17

Max 40 75 24

Units C/W C/W C/W

Rev 8: December 2011

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AO4712

Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V C TJ=125 VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=13A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance Diode Forward Voltage VDS=5V, ID=13A IS=1A,VGS=0V TJ=125 C 1.1 68 9 13 10.7 80 0.4 0.7 5 930 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 90 45 0.7 16 VGS=10V, VDS=15V, ID=13A 7 1170 128 89 1.4 20 8.7 3.2 3 6 VGS=10V, VDS=15V, RL=1.2, RGEN=3 IF=13A, dI/dt=500A/s 5.5 5 2.4 23 4 7 6.5 8.5 8 1400 170 125 2.1 24 10.5 11 16 14 1.65 Min 30 0.5 100 100 2.1 Typ Max Units V mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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AO4712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


35 10V 30 3V 25 ID (A) ID(A) 20 2.5V 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 13 12 RDS(ON) (m ) 11 10 9 8 7 1 16 21 26 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 6 11 VGS=10V Normalized On-Resistance VGS=2.25V 2.75V 30 25 20 125C 15 10 25C 5 0 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS=5V 35

2 VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 200 VGS=10V ID=13A

17 5 2 VGS=4.5V 10 I =11A
D

0 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)

25 ID=13A 20 RDS(ON) (m ) 125C IS (A)

1.0E+02 1.0E+01 1.0E+00 125C

40

15

1.0E-01 1.0E-02 1.0E-03 25C

10

25C

1.0E-04 1.0E-05

0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 4

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)

Rev 8: December 2011

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AO4712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


10 VDS=15V ID=13A Capacitance (pF) 1500 Ciss 1200

VGS (Volts)

900

600 Coss 300 Crss

0 0 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 5 20

0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25

1000.0 100.0

10000

ID (Amps)

Power (W)

10.0 1.0 0.1 0.0

RDS(ON) limited

10s 100s 1ms 10ms TJ(Max)=150C TA=25C 10s DC

1000

100
TA=25C

10

1
0.01 0.1 1 VDS (Volts) 10 100

0.00001

Figure 10: Maximum Forward Biased Safe Operating Area (Note F)


10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W

0.001 0.1 Width (s) 10 1000 Pulse Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1 PD Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Ton

0.01

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AO4712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


1.E-01 0.9 0.8 1.E-02 VDS=30V VSD (V) IR (A) 1.E-03 VDS=15V 1.E-04 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.E-05 100 150 200 Temperature ( C) Figure 13: Diode Reverse Leakage Current vs. Junction Temperature 12 di/dt=800A/s 9 Qrr (nC) 25C 6 Qrr 125C 3 Irm 25C 0 0 5 10 15 20 25 30 125C 6 5 4 3 2 1 IS (A) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 10 Is=20A 8 4 Qrr (nC) trr (ns) Qrr 4 2 Irm 0 0 200 400 600 800 0 1000 di/dt (A/s) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. di/dt 0 0 200 400 600 800 di/dt (A/s) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. di/dt 125C 2 25C 3 25C Irm (A) 6 25C 9 125C 6 8 di/dt=800A/s 6 25C trr (ns) Irm (A) 4 trr 125C 2 S 25C 0 0 5 10 15 20 25 30 IS (A) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 0.5 0 2 125C 0 50 0 0 100 150 200 Temperature ( C) Figure 14: Diode Forward voltage vs. Junction Temperature 50 IS=1A 5A 20A 10A

3 2.5

12 Is=20A

3 2.5 2 25C

40

125C

6 125C

trr

1.5 1

0.5 0 1000

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1.5

AO4712

Gate Charge Test Circuit & Waveform


Vgs Qg

+
VDC

10V
VDC

DUT Vgs Ig

+ Vds -

Qgs

Qgd

Charge

Resistive Switching Test Circuit & Waveforms


RL Vds Vds

Vgs Rg

DUT

VDC

+ Vdd Vgs
t d(on) t on tr t d(off) toff tf

90%

10%

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms


L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR = 1/2 LIAR
2

BVDSS

VDC

+ Vdd Id

I AR

Diode Recovery Test Circuit & Waveforms


Vds + DUT Vgs
t rr

Q rr = - Idt

Vds Isd Vgs Ig

Isd

IF

dI/dt I RM Vdd

VDC

+ Vdd Vds

Rev 8: December 2011

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