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SRFET
General Description
SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
TM
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 13A < 11m < 14m
SOIC-8 Top View D D D D Bottom View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S
G S S S
Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25 C Power Dissipation B TA=70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
C
Units V V A A mJ W C
VGS TA=25 C TA=70 C ID IDM IAS, IAR EAS, EAR PD TJ, TSTG
Symbol
t 10s Steady-State Steady-State
RJA RJL
Typ 32 60 17
Max 40 75 24
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Page 1 of 6
AO4712
Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V C TJ=125 VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=13A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance Diode Forward Voltage VDS=5V, ID=13A IS=1A,VGS=0V TJ=125 C 1.1 68 9 13 10.7 80 0.4 0.7 5 930 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 90 45 0.7 16 VGS=10V, VDS=15V, ID=13A 7 1170 128 89 1.4 20 8.7 3.2 3 6 VGS=10V, VDS=15V, RL=1.2, RGEN=3 IF=13A, dI/dt=500A/s 5.5 5 2.4 23 4 7 6.5 8.5 8 1400 170 125 2.1 24 10.5 11 16 14 1.65 Min 30 0.5 100 100 2.1 Typ Max Units V mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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Page 2 of 6
AO4712
2 VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 200 VGS=10V ID=13A
17 5 2 VGS=4.5V 10 I =11A
D
40
15
10
25C
1.0E-04 1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
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Page 3 of 6
AO4712
VGS (Volts)
900
1000.0 100.0
10000
ID (Amps)
Power (W)
RDS(ON) limited
1000
100
TA=25C
10
1
0.01 0.1 1 VDS (Volts) 10 100
0.00001
0.001 0.1 Width (s) 10 1000 Pulse Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Ton
0.01
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Page 4 of 6
AO4712
3 2.5
12 Is=20A
3 2.5 2 25C
40
125C
6 125C
trr
1.5 1
0.5 0 1000
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Page 5 of 6
1.5
AO4712
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Vgs Rg
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) toff tf
90%
10%
Vgs
BVDSS
VDC
+ Vdd Id
I AR
Q rr = - Idt
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
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Page 6 of 6