AO4407A P-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4407A/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AO4407A and AO4407AL are electrically identical. -RoHS Compliant -AO4407AL is Halogen Free

Features
VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11m (VGS = -20V) RDS(ON) < 13m (VGS = -10V) RDS(ON) < 38m (VGS = -5V)

UIS TESTED! RG, CISS, COSS, CRSS TESTED!

SOIC-8 Top View S S S G D D D D G

Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH G Power Dissipation
A B

Maximum

-30 25 -12 -10 -60 -26 101 3.1 2.0 -55 to 150

Units V V

TA=25C TA=70C ID IDM IAR EAR PD TJ, TSTG TA=25C TA=70C

mJ W C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t 10s Steady State Steady State RJA RJL

Typ 32 60 17

Max 40 75 24

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4407A

Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID = -250A, VGS = 0V VDS = -30V, VGS = 0V TJ = 55C VDS = 0V, VGS = 25V VDS = VGS ID = -250A VGS = -10V, VDS = -5V VGS = -20V, ID = -12A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS = -10V, ID = -12A VGS = -5V, ID = -10A gFS VSD IS Forward Transconductance VDS = -5V, ID = -10A IS = -1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current -1.7 -60 8.5 11.5 10 27 21 -0.7 -1 -3 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 370 295 2.4 30 VGS=-10V, VDS=-15V, ID=-12A 4.6 10 11 VGS=-10V, VDS=-15V, RL=1.25, RGEN=3 IF=-12A, dI/dt=100A/s 9.4 24 12 30 22 40 3.6 39 2600 11 15 13 38 S V A pF pF pF nC nC nC ns ns ns ns ns nC m -2.3 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev7: July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4407A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 -10V 60 -6V -5V -ID(A) 60 80 VDS= -5V

-ID (A)

40

-4.5V -4V

40 125C 20 25C 0

20 VGS= -3.5V 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 40 Normalized On-Resistance VGS=-5V 30 RDS(ON) (m)

0.5

1.5

2.5

3.5

4.5

-VGS(Volts) Figure 2: Transfer Characteristics 1.6 VGS=-20V ID=-12A 1.4 VGS=-10V ID=-12A

20 VGS=-10V 10 VGS=-20V 0 0 4 8

1.2

1.0

VGS=-5V ID=-10A

I dI/dt=100A/ 12 20 s F=-6.5A,16

0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 125C

-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 RDS(ON) (m) 20 125C 15 25C 10 5 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

ID=-12A

-IS (A)

1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4407A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-12A 3000 2500 Ciss Capacitance (pF) 2000 1500 1000 500 Crss 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Coss

100 10s 10 -ID (Amps) 100s

1000
TJ(Max)=150C TA=25C

RDS(ON) limited TJ(Max)=150C TA=25C

10ms 100ms

Power (W)

1ms

100

0.1

10

10s DC 1 -VDS (Volts) 10 100

0.01 0.1

1 0.00001

Figure 9: Maximum Forward Biased Safe Operating Area (Note E)

0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)

0.001

10 ZJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1 PD 0.01 Single Pulse Ton

0.001 0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4407A

Gate Charge Test Circuit & Waveform

Vgs

Qg

+
VD C

10V
VDC

DUT
Vgs

+ Vds -

Qgs

Q gd

Ig
Charge

Resistive Switching Test Circuit & Waveforms

R L

Vds
Vds 90%

Rg Vgs

Vgs

DU T

VD C

+ -

Vdd
10% Vgs
t d(on) tr t on t d(off) t off tf

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L
Vds
EAR = 1/2 LI
2 AR

BVDSS

Id

Vds

Vgs
Rg
DU T

Vgs

VDC

+ Vdd -

Id

I AR

Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Vds +

Qrr = - Idt

DUT

Vgs

Vds -

Isd

L
VD C

Isd

IF

Vgs Ig

+ -

dI/dt

trr

Vdd

IRM

Vds

Vdd

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com