Physics 326 Analog Electronics

Theory Manual
Diodes, Transistors and Operational Amplifiers Bruce G. Thompson Ithaca College Spring 2008

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1.0 Diodes
1.1 What are Diodes
Diodes are electronic devices which are made by joining n type and p type semiconductor material (figure 1). The physics of the junction allows current to flow easily if the n side is more positive than the p side (figure 2a). Very little current flows if the voltages are reversed (figure 2b). So if current is thought of as a flow of a fluid, then the diode is a one way valve.

1.2 Diode Models

There are 3 models to use when thinking about how diodes work. The first approximation is that the diode conducts in one direction when a voltage is applied and does not conduct in the opposite direction no matter what the voltage (figure 3). The diode to electrical current like a one-way valve does to liquid flow in a pipe. More useful is the second approximation which includes the fact that it takes a minimum voltage in the positive direction before the diode will conduct (figure 4). It is like the fluid valve needing a minimum pressure to open it up. This model is all that is needed to analyze most diode circuits. A more complete analysis of the solid state physics gives the third model of a diode (Figure 5). The actual behavior of a diode is exponential and depends on the temperature.

I D = I 0 (eVD I 0 = 10nA

VT

1)

VT 40mV @ roomT

1.3 Diode Specifications and Limitations

Table 1 lists some common types of diodes and their uses. This is by no means exhaustive but will give you a starting point. Diodes are frequently listed with several parameters: maximum average current, maximum forward voltage, maximum reverse breakdown voltage, recovery time. Zeners are listed by Zener voltage at a specified current and have a power rating (1/2 or 1 W).

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Table 1 Diode Germanium Silicon Silicon Shottky Zener

Use signal signal rectifier rectifier regulator

Approximate V forward 0.3 0.6 1.0 0.5 various in reverse bias

Comments old technology low power, fast high power, slow high power, fast

Like resistors, diodes will burn up (overheat) if you put more power through them than they are designed to handle. Since the forward voltage drop is determined by the current via the diode equation and since Power = VI, specifying the maximum current is the same as specifying the maximum power dissipation. The maximum forward voltage is the voltage across the diode at the maximum average current so multiply the two to get the power rating. All diodes will begin to conduct in the reverse direction if a high enough voltage is applied (Figure 5). This is called reverse breakdown. It's like the fluid valve having so much pressure in the reverse direction that it breaks down and lets the fluid flow in the opposite direction. The maximum reverse breakdown voltage is the specification of this point for a diode. To exceed this voltage without limiting the current will cause a large current to flow and probably blow the diode. Zener diodes are designed to breakdown at a specified voltage. The voltage across the terminals is fairly constant over a wide range of currents (0.1 mA to 100 mA). They come with voltage specifications from 2.7 to 47 V and are used as voltage references. It takes a certain amount of time for a diode to turn off when the voltage is reversed. This is called the recovery time. It is used when designing high frequency circuits such as the switching power supplies found in computers.

1.4 Diode Circuits 1.4.1 Diode as Rectifier:

Figure 6 shows a basic rectifier circuit used to convert AC power from the wall plug to DC power for use in an electronic circuit. The diode D conducts when the input voltage Vin is above the output voltage Vout . When the diode is conducting the capacitor accepts the current by accumulating charge on its plates. The charge on the plates is given by Q = CV . When Vin is less than Vout , no current flows through the diode so the current to the load RL discharges the capacitor,

dQ dV =I =C . dT dT

Therefore this circuit produces a DC voltage with an AC ripple voltage superimposed on it as shown. To design a power supply you need to specify the desired output voltage, output current (or equivalent load impedance) and the maximum ripple voltage tolerated. Then choose a transformer to give you the right average voltage, choose a rectifier which can handle the average current and the reverse voltage from the input voltage on the negative cycle and

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choose a capacitor which gives you the tolerated ripple. A variation of this circuit uses a bridge rectifier as shown in figure 7. This is called a full-wave rectifier as opposed to the half-wave rectifier in figure 6 where one-half of the input signal is thrown away.

1.4.2 Diode with Load Line:

To lead us into transistor operation let's look at how to determine the voltage and current in the circuit shown in figure 8a. The input voltage V causes a current to flow in the resistor R and the diode D. The output voltage Vout is just the voltage across the diode. Figure 8b shows the current in the diode I D as a function of the diode voltage VD (and thus Vout ), i.e. it is a plot of the diode equation. Also shown is the line which gives the current in the resistor as a function of Vout , that is, I R = (V Vout ) R . This is called the load line equation. Notice that when Vout = 0 , then I R = V R and when I R = 0, then Vout = V . Now, the current in the resistor must be equal to the current in the diode; there is nowhere else the current is going. So, the circuit operates at the point which is the solution of the two equations (diode and load line) and two unknowns (Vout and I ). The point where the lines cross satisfies both equations and so the solution can be obtained from the graph giving Vout and I . This is called the quiescent point of operation which means the point of operation for a DC input voltage. As an exercise, think about what happens to the operating point if a) R is increased b) V is increased. Now think about what happens if a small AC voltage v is added (superimposed) on V, that is, sometimes V is increased a little and sometimes it is decreased a little. What are the changes in Vout and I?

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1.4.3 Zener Diode Regulator:

As described above, zener diodes have a specified reverse breakdown voltage. Let's see how a zener diode operates in the circuit above but with the diode upside down so that breakdown can occur, figure 9a. The zener conducts very little current until the voltage reaches its breakdown voltage; then its resistance gets very small a lot of current can flow. If we look at the load line solution, figure 9b, the zener line is very steep once breakdown occurs. This means that if the input voltage is now varied, moving the load line, the Vout will vary by only a small amount. So, the output is constant even though the input varies; this is called voltage regulation. A regulated voltage is one you can count on. Zeners are commonly used for this purpose.

1.4.4 Diode Protection:

A diode is the condom of the electronic world. It is used all the time to protect the inputs of sensitive devices from abuse such as voltage spikes from lightning. Figure 10 shows how a diode can protect a transistor from the inductive relay. The problem is this: The transistor here is being used as a switch to turn the relay on and off. When the real switch S is closed, current flows into the base of the transistor and thus allowing a large current to flow in the collector (you'll see this later in the transistor section). The diode doesn't conduct in that direction so the current activates the relay and all is well. The problem occurs when the switch is opened and the transistor quickly stops the current flowing. The relay is a big inductor which does what it can to maintain the current flow. It does this by increasing the voltage at the collector (Figure 10, point A) (remember for an inductor V = L

dI ). As soon dt

as the voltage gets more than about 1 volt above V, the diode begins to conduct. This limits the voltage at the collector to about V+1 so the transistor is happy. If the diode were not there the inductor could easily increase the voltage at the collector to 1000 V which would destroy it immediately!

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Transistors
What are Transistors
Transistors are electronic devices which are made by joining three pieces of semiconductor material (Figure 1). They come in two types (polarities), npn and pnp, which describe the manner in which the p and n type semiconductor material is connected. A transistor has three wires connected to the three semiconductors. The base is the center material and the terminals which are designated the emitter and collector are determined by the geometry of the semiconductor during manufacturing. At the most basic level, a transistor is just two pn junctions: one from the base to the collector and one from the base to the emitter. To find out if a transistor is blown out, you can test it to see if the two diode junctions are intact but transistor operation is much different than just having two diodes. The operation of the transistor con be stated as follows: the amount of current flowing in the baseemitter junction determines the current from the emitter to the collector. The direction of the current flow is determined by the polarity of transistor used. We will be using npn transistors exclusively.

Transistor as a Switch
By knowing just a little about transistors we can begin to use them as switches to control DC loads such as LEDs and relays (see Figure 2). The little bit we need to know is that:

Transistor Properties (npn polarity)

1) Vc needs to be greater than Ve. 2) The base-emitter junction looks like a diode. 3) If we put current into the base-emitter diode, a larger current can flow from the collector to the emitter. 4) Ic, Ib, Vce all have maximum ratings which, if exceeded, will destroy the transistor. In Figure 2, the emitter is grounded. Since the base to emitter looks like a diode, closing the switch S will put a current into that diode and create a voltage of about 0.6 volts at the base. The resistor determines the base current as follows Ib = (V across R)/R = (12-0.6)/1.0K = 11.4 mA.

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Since item 3 above is satisfied for this circuit, the transistor allows a large current to flow from the collector to the emitter. It does this by lowering Vce to almost zero (about 0.2 V). So the current in the lamp is Ic = (V across the lamp)/(R of the lamp) Ic = (12-0.2)/100 120 mA. This on state of the transistor is called saturation. The current gain, Ai, is defined as the amount of load current divided by the amount of control current. In this case, Ai = Ic/Ib = 11. Unless you use special switching transistors, you should design for a maximum current gain of about 20 when the transistor is in saturation. For example, a headlight for a car needs about 10 A of current. To control this with a transistor with a current gain of 20, you will need to provide 10 A/20 = 0.5 A of base current. With a 12 volt system, your base resistor will need to be less than R = V/I = (12-0.6)/0.5 = 223 ohms. When the manual switch S is opened, the current no longer flows into the base and so the collector current stops also. Many times a circuit design will include a resistor from the base to the ground (about 10K in this circuit) so that the transistor shuts off quickly and completely. This state of the transistor is called cutoff. Remember the caution described in the section on diodes: if the load being switched is inductive, be sure to use a protective diode to limit the voltage on the collector when the current is turned off.

First Transistor Model

We can go very far in understanding transistors by using just a few more transistor characteristics.

More Transistor Properties

5) Any current that goes into Ic and into Ib must come out Ie, so Ie = Ic + Ib. 6) Since the base to emitter junction looks like a diode, Vbe = Vb-Ve is about 0.6V. 7) If conditions 1-4 are satisfied, then the current gain of the transistor is: Ic/Ib = hfe, where hfe is about 100 to 250 for transistors operating in the active range (not in saturation). Note that items 6 and 7 are approximations which we will use until they get us in trouble. Also note that hfe is not a well determined parameter. It can vary by as much as 100% for two of the same type of transistor pulled out of the bin. If your circuit design depends on the exact value of hfe, the circuit will behave differently each time you put in a new transistor. Sometimes this is ok and sometimes it isnt. We will now use these characteristics to discuss various transistor circuits as we gradually build up to an understanding of the Common Emitter Amplifier.

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Transistor Emitter Follower

The Emitter Follower (Figure 3a) is perhaps the simplest transistor circuit to consider with the transistor operating in the active region, that is, not cutoff and not in saturation. This is the region where a transistor can amplify a signal. If a voltage Vin is placed on the base, then the output voltage is Vout = Ve = Vin-0.6V from property 6 above. If we vary Vin a little (Vin), the output voltage will vary the same amount, Vout = Vin. So the voltage gain is Av = Vout/Vin = 1. The output voltage follows the input voltage directly (Figure 3b) hence the name emitter follower. So far that is not very impressive but lets look at the current. Since we know Ve = (Vb-0.6), we can calculate Ie = Ve/RE (assuming no current is going out the output terminal). From properties 5 and 7, we can determine that Ib = Ie/(hfe+1) so the base current is much smaller that the current in RE. The current gain is Ai = Ie/Ib = hfe+1. Since power is P = VI there is a net power gain. This can be useful if, for example, you want to put power into an audio speaker. Figure 4 shows a real world example of an emitter follower. Now lets model the emitter follower as an amplifier (figure 5) and calculate the input and output impedances. To calculate the input impedance, we vary the input voltage and observe the change in the input current, rin = Vin/Iin = Vb/Ib. But Vb = Ve and Ib = Ie/(hfe+1), so rin = (Ve/Ie)(hfe+1) = RE(hfe+1). The input impedance is relatively large; it doesnt present a heavy load to the device providing Vin. You may have noticed one limitation of the Emitter Follower in figure 3. The output voltage was not able to follow the input voltage when Vin was below 0.6V. This is because the transistor can do no more than turn off the current in Ie and let the resistor pull the output to ground. It does this when the base voltage falls below 0.6V. The transistor does not produce any current, it only acts as a valve for the current flowing from the power supply (Vcc) connected to the collector.

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Biasing the Emitter Follower

Suppose you want to drive the Emitter Follower with an AC signal, that is, a signal varies about 0V. As discussed above, the circuit in figure 3 will have trouble with the negative part of the signal. The solution is to add a DC voltage to the AC signal so that the combination never goes below 0.6 V. This is called adding a DC bias or biasing. Figure 6 shows how this can be done. Consider the case where there is no AC input vin=0. The capacitor does not conduct DC current so Vb is determined by the currents in R1 and R2 and into the base, Ib: (Vcc-Vb)/R1 = Vb/R2 + Ib. Since Ib is determined by hfe we want to minimize its effect on Vb so that our circuit behaves when we put in a different transistor. We can do this by making the current through R1 and R2 much larger than Ib. This allows us to neglect Ib in the voltage divider and find that Vb = Vcc R2/(R1+R2). Usually we will want to set Ve1/2 Vcc so that the circuit has the maximum range to follow the AC input. The DC current will then be Ie = 1/2 Vcc/RE. The DC operating point: Vout and Ie (or Ic), is called the quiescent point. What happends when we now turn on the AC signal, vin? The voltage at the base will then be the addition of the DC voltage, Vb, and the voltage which gets through the capacitor from vin. The signal, vin, sees the impedance of the capacitor in series with the parallel combination of R1, R2 and rin of the transistor (figure 7). Remember rin is large (since Ib is small) and so R1 and R2 dominate the combination. If the capacitor impedance is much smaller than R1||R2 then vb will be very nearly vin. The impedance of a capacitor is |Zc| = 1/(2fC1) where f is the frequency of vin. If we know the minimum frequency of vin then we make C1 large enough so that |Zc|<<R1||R2. This will ensure that vbvin. We now have a circuit which allows us to input an AC signal vin and get an output with a power gain.

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Current Source
Lets look at the circuit in figure 3 in a different way. Since Ie = [hfe/(hfe+1)] Ic and Vout = Vb-0.6 = IeRE then Ic is a function of Vb,

Ic =

hfe + 1 Vb 0.6 hfe RE

That is, the collector current Ic can be set by setting Vin = Vb. This is called transconductance because a current is being set by a voltage. Current sources are useful in their own right but we want to change this current into a voltage so that we have a voltage amplifier. We do this by hooking the current source to a resistor (figure 8). If we establish a current Ic with a voltage at the base Vb, this current flows through the resistor Rc. The voltage at Vout is then

Vout = Vcc I C RC = Vcc

so Vout is determined by Vb.

h fe + 1 Vb 0.6 RC h fe RE

To find the gain we vary Vb by a little and look at what happens to Vout.

Vout =

h fe 1 h fe

Vb

RC RE

Since hfe>>1 the first term is very close to 1 so the gain is

AV =

Vout R = C Vb RE

Now if we add the input bias circuit we used before (figure 9) we can put a signal on the input and get an amplified signal on the output. Notice that now we will want to set the DC operating point so that the output at Vc will have the widest range. More on that later. We finally have a voltage amplifier! We even have one in which the gain is not dependant upon the hfe of the transistor as long as it is large.

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Input impedance
Lets take a quick look at the input impedance of the circuit in figure 9. If C1 is large then its impedance can be ignored. Then the impedances seen when looking into the capacitor are R1 in parallel with R2 in parallel with R looking into the base, which we calculated to be (hfe+1)RE. So,

1 1 1 1 + + rin R1 R2 h fe RE
Output impedance
Lets also look at the output impedance. We do this by imagining a load attached to Vout and determine what happens when that load is varied. When we look into Vout, we see RL in parallel with the resistance looking into the collector. But the transistor is a good current source so as we vary the load on vout the current Ic doesnt change, only the current in RL changes to provide the load current. Therefore, rout = RL.

Model Limitations
Now lets try to get more gain from the amplifier. If we make RE smaller the gain will increase. In fact, if we ground the emitter, we expect an infinite gain! This doesnt happen so our model is not useful at this extreme. Some other effects appear when RE goes to zero. The output is no longer linear, that is, the gain is not constant. It changes depending on the voltage at the input. The input impedance is also not zero and not constant contrary to expectations. Also, temperature begins to have a large effect on the operation of the circuit.

Modified Transistor Model

The part of the model we need to change is property 7 that the collector current is determined by the base current. A more accurate model is that the collector current is determined by the base-emitter voltage. 7mod) If conditions 1-4 are satisfied, then the current gain of the transistor is:

Ic = I s (e

V be V T

1)

where VT = 25 mV @ 20C and Is is the reverse leakage current. Ib is now determined from Ic by using Ib = Ic/hfe. This is the Ebers-Moll Equation It looks familiar because it also describes the operation of a diode except that for a diode VT 40 mV @ 20C. When the transistor is in the active region of operation, Ic >> Is so the -1 can be ignored:

Ic = I se

V be V T

The most important effect of this model change is that we can calculate the small signal impedance

re =

dV e dIe

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looking into the emitter. First, solve for Vbe:

I V be = V T ln c Is
Now if we hold the base voltage constant and change the emitter voltage by a small amount the baseemitter voltage will change by the same amount. So,

dV e = dV be =
Since dIe dIc,

VT dI Ic c

re

VT Ic

This is a small resistance which is in series with the emitter. Lets see how it changes the results we have gotten so far.

Emitter Follower Revisited

The effective Emitter Follower circuit now looks like figure 10 and the output voltage,

V out = Ve
and

RE RE = (V b 0.6) RE + re RE + re

Vout =

RE V in RE + r e

So, the gain is less than one. In the circuit of figure 4 re=25 so the gain is 0.995. Not much less than 1! The input impedance before we changed the model was RE(hfe+1) but now there is another resistance in series so

rin = (RE + re )( h fe + 1)

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Common Emitter Amplifier

Now lets look at the circuit in figure 9. With both RE and re in the emitter circuit the gain becomes

AV =

RL RE + re

Now if we let RE go to zero the gain tops out at

AV =

RL re

For example if RL=5.6K and re25, then the gain is Av = -220. Figure 11 shows a circuit which maximizes the AC gain while maintaining the DC operating point. By shunting RE with a capacitor, C2, we provide a easy path to ground for the AC current. If the impedance of the capacitor is much smaller than RE, the AC current ie will flow through the capacitor to ground. The effective emitter resistor becomes just re. So the gain of the amplifier of figure 11 for an AC input vin is, as above, Av = -RL/re.

A note on Hybrid Parameters

The hybrid parameter hie is the intrinsic input impedance of the transistor, i.e. hie = rin = (hfe+1) re hfe re. So we can rewrite the gain

AV =

h fe RL hie

as seen in the lab notes.

Non-Linearity
As noted above, the gain of a high gain amplifier is not constant while vin varies over the input range. This will distort the shape of the wave form and is best seen using a triangle wave input (figure 12). The reason for this behavior can be seen from the gain equation:

AV = RL

Ic VT

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The gain depends on the collector current. When vin goes high, the collector current increases according to the Ebers-Moll Equation. This decreases the vout but it also increases the gain so that the gain when vout is low is greater than when vout is higher. Since the slope of the triangle wave is the gain, the slope is larger when vout is lower, and vice versa.

Design Procedure for a Common Emitter Amplifier

Lets recap the procedure for designing a common emitter amplifier without emitter bypass capacitor (figure 6) by means of an example. Suppose we want to make an amplifier which will amplify audio frequencies (20 Hz to 20K Hz) by a gain of 10. The power is provided by a 9 volt battery (Vcc). We have picked out a transistor and the specifications tell us that a current of 1 mA will put it in the active region. Now lets choose the resistors and capacitor. 1) We want to set Vout to 1/2 Vcc = 4.5 V so that it will have the widest voltage swing possible. Since we have chosen Ic to be 1 mA, RC = (9-4.5)/1ma = 4.5K. Since the gain is 10, RE = 4.5K/10 = 450. 2) Now Ve = RE IE = 0.45 V and we want to set Vb = 0.45+0.60 = 1.05 V. We set Vb by choosing R1 and R2 so that the current through them, I=Vcc/(R1+R2) is much greater than Ib = Ic/hfe = 0.01 mA and that Vb = Vcc R2/(R1+R2) = 1.05 V. So if R2 = 2K then R1 = 27K and I = 0.5 mA. 3) Finally, we choose C1 so that |ZC1|<<R=R1||R2||RE hfe at f=20Hz. RE hfe = 45K so R = 1.8K and C1>> 1/(1.8K 2 20) = 4 uF.

More Gain
If more gain is desired from the amplifier then bypass RE with another capacitor whose impedance at 20 Hz is much less than RE. So, C2>>18uF.

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2N3904 / MMBT3904 / PZT3904

2N3904

MMBT3904
C

PZT3904
C

E C B

E C

TO-92
E

SOT-23
Mark: 1A

SOT-223

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
40 60 6.0 200 -55 to +150

Units
V V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3904 625 5.0 83.3 200

Max
*MMBT3904 350 2.8 357 **PZT3904 1,000 8.0 125

Units
mW mW/C C/W C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

2001 Fairchild Semiconductor Corporation

2N3904/MMBT3904/PZT3904, Rev A

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 30 V, VEB = 3V VCE = 30 V, VEB = 3V 40 60 6.0 50 50 V V V nA nA

ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.65

0.2 0.3 0.85 0.95

V V V V

SMALL SIGNAL CHARACTERISTICS

fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 A, VCE = 5.0 V, RS =1.0k,f=10 Hz to 15.7kHz 300 4.0 8.0 5.0 MHz pF pF dB

SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 35 35 200 50 ns ns ns ns

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Typical Characteristics

500 400
125 C

V CE = 5V

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYP ICAL PULSED CURRE NT GAIN

Typical Pulsed Current Gain vs Collector Current

Collector-Emitter Saturation Voltage vs Collector Current

0.15 = 10
125 C

300
25 C

0.1
25 C

200 100 0 0.1

- 40 C

0.05
- 40 C

1 10 I C - COLLECTOR CURRENT (mA)

100

0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

V - BASE-EMITTER ON VOLTAGE (V) BE(ON)

VBESAT- BASE-EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current

1
= 10

Base-Emitter ON Voltage vs Collector Current

1 VCE = 5V 0.8
- 40 C 25 C

0.8

- 40 C 25 C

0.6
125 C

0.6
125 C

0.4

0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100

0.2 0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

Collector-Cutoff Current vs Ambient Temperature

ICBO- COLLECTOR CURRENT (nA) 500
CAPACITANCE (pF) 10

Capacitance vs Reverse Bias Voltage

f = 1.0 MHz

100 10 1 0.1

VCB = 30V

5 4 3 2
C obo C ibo

25

50 75 100 125 TA - AMBIENT TEMPERATURE ( C)

150

1 0.1

1 10 REVERSE BIAS VOLTAGE (V)

100

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Noise Figure vs Frequency

12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1
I C = 100 A, R S = 500

Noise Figure vs Source Resistance

12 NF - NOISE FIGURE (dB)
I C = 1.0 mA

I C = 1.0 mA R S = 200 I C = 50 A R S = 1.0 k I C = 0.5 mA R S = 200

V CE = 5.0V 10

I C = 5.0 mA

8 6 4 2 0 0.1

I C = 50 A

I C = 100 A

1 10 f - FREQUENCY (kHz)

100

1 10 R S - SOURCE RESISTANCE ( k )

100

Current Gain and Phase Angle vs Frequency

50 45 40 35 30 25 20 15 10 5 0 h fe
PD - POWER DISSIPATION (W)

Power Dissipation vs Ambient Temperature

0 20 40 60 80 100 120 140 160 180
1000
1

- CURRENT GAIN (dB)

SOT-223
0.75

- DEGREES

TO-92

0.5

SOT-23
0.25

V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz)

fe

25

50 75 100 TEMPERATURE (o C)

125

150

Turn-On Time vs Collector Current

500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100
Ic 10

Rise Time vs Collector Current

500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 =
Ic 10

100
T J = 125C

T J = 25C

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Storage Time vs Collector Current

500 t S - STORAGE TIME (ns)
T J = 25C

Fall Time vs Collector Current

500 I B1 = I B2 = t f - FALL TIME (ns)
T J = 125C Ic 10

I B1 = I B2 =

Ic 10

VCC = 40V

100
T J = 125C

100
T J = 25C

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

Current Gain
V CE = 10 V f = 1.0 kHz T A = 25oC h oe - OUTPUT ADMITTANCE ( mhos) 500 100

Output Admittance
V CE = 10 V f = 1.0 kHz T A = 25oC

h fe - CURRENT GAIN

100

10

10 0.1

1 I C - COLLECTOR CURRENT (mA)

10

1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

h re - VOLTAGE FEEDBACK RATIO (x10

100 h ie - INPUT IMPEDANCE (k )

_4

Input Impedance
V CE = 10 V f = 1.0 kHz T A = 25oC

Voltage Feedback Ratio

10 7 5 4 3 2 V CE = 10 V f = 1.0 kHz T A = 25oC

10

0.1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

(continued)

Test Circuits
3.0 V

300 ns 10.6 V Duty Cycle = 2% 0 - 0.5 V < 1.0 ns 10 K

275

C1 < 4.0 pF

FIGURE 1: Delay and Rise Time Equivalent Test Circuit

3.0 V

10 < t1 < 500 s

t1 10.9 V 275

Duty Cycle = 2% 0 10 K C1 < 4.0 pF - 9.1 V < 1.0 ns 1N916

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

LF411 Low Offset Low Drift JFET Input Operational Amplifier

February 1995

LF411 Low Offset Low Drift JFET Input Operational Amplifier

General Description
These devices are low cost high speed JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift They require low supply current yet maintain a large gain bandwidth product and fast slew rate In addition well matched high voltage JFET input devices provide very low input bias and offset currents The LF411 is pin compatible with the standard LM741 allowing designers to immediately upgrade the overall performance of existing designs These amplifiers may be used in applications such as high speed integrators fast D A converters sample and hold circuits and many other circuits requiring low input offset voltage and drift low input bias current high input impedance high slew rate and wide bandwidth

Features
Y Y Y Y Y Y Y Y Y

Y Y

Internally trimmed offset voltage 0 5 mV(max) Input offset voltage drift 10 mV C(max) Low input bias current 50 pA Low input noise current 0 01 pA 0Hz Wide gain bandwidth 3 MHz(min) High slew rate 10V ms(min) Low supply current 1 8 mA High input impedance 1012X k 0 02% Low total harmonic distortion AV e 10 RL e 10k VO e 20 Vp-p BW e 20 Hzb20 kHz Low 1 f noise corner 50 Hz Fast settling time to 0 01% 2 ms

Typical Connection

Ordering Information
X Y LF411XYZ indicates electrical grade indicates temperature range M for military C for commercial indicates package type H or N

Connection Diagrams
Metal Can Package

TL H 5655 5

Top View
Note Pin 4 connected to case
TL H 56551

Simplified Schematic

Order Number LF411ACH or LF411MH 883 See NS Package Number H08A Dual-In-Line Package

TL H 5655 7

TL H 5655 6
BI-FET IITM is a trademark of National Semiconductor Corporation

Top View Order Number LF411ACN LF411CN or LF411MJ 883 See NS Package Number N08E or J08A
Available per JM38510 11904

C1995 National Semiconductor Corporation

TL H 5655

RRD-B30M115 Printed in U S A

Absolute Maximum Ratings

If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 8) LF411A LF411 g 22V g 18V Supply Voltage g 38V g 30V Differential Input Voltage Input Voltage Range g 19V g 15V (Note 1) Output Short Circuit Duration Continuous Continuous H Package Power Dissipation (Notes 2 and 9) Tjmax ijA 670 mW 150 C 162 C W (Still Air) 65 C W (400 LF min Air Flow) 20 C W (Note 3)
b 65 C s TA s 150 C

N Package 670 mW 115 C 120 C W

ijC Operating Temp Range Storage Temp Range

(Note 3)
b 65 C s TA s 150 C

Lead Temp (Soldering 10 sec ) ESD Tolerance

260 C

260 C Rating to be determined

DC Electrical Characteristics (Note 4)

Symbol VOS DVOS DT IOS Parameter Input Offset Voltage Average TC of Input Offset Voltage Input Offset Current Conditions Min RS e 10 kX TA e 25 C RS e 10 kX (Note 5) VS e g 15V (Notes 4 6) Tj e 25 C Tj e 70 C Tj e 125 C IB Input Bias Current VS e g 15V (Notes 4 6) Tj e 25 C Tj e 70 C Tj e 125 C RIN AVOL Input Resistance Large Signal Voltage Gain Tj e 25 C VS e g 15V VO e g 10V RL e 2k TA e 25 C Over Temperature VO VCM Output Voltage Swing Input Common-Mode Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current RSs10k (Note 7) VS e g 15V RL e 10k 50 25
g 12 g 16

LF411A Typ 03 7 25 Max 05 10 100 2 25 50 200 4 50 1012 200 200

g 13 5

LF411 Min Typ 08 7 25 Max 20 20 (Note 5) 100 2 25 50 200 4 50 1012 25 15

g 12 g 11

Units mV mV C pA nA nA pA nA nA X V mV V mV V V V dB dB 34 mA

200 200
g 13 5

a 19 5 b 16 5

a 14 5 b 11 5

CMRR PSRR IS

80 80

100 100 18 28

70 70

100 100 18

AC Electrical Characteristics (Note 4)

Symbol SR GBW en in Parameter Slew Rate Gain-Bandwidth Product Equivalent Input Noise Voltage Equivalent Input Noise Current Conditions Min VS e g 15V TA e 25 C VS e g 15V TA e 25 C TA e 25 C RS e 100X f e 1 kHz TA e 25 C f e 1 kHz 2 10 3 LF411A Typ 15 4 25 0 01 Max Min 8 27 LF411 Typ 15 4 25 0 01 Max V ms MHz nV pA Units

S0Hz S0Hz

Note 1 Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage Note 2 For operating at elevated temperature these devices must be derated based on a thermal resistance of ijA Note 3 These devices are available in both the commercial temperature range 0 C s TA s 70 C and the military temperature range b 55 C s TA s 125 C The temperature range is designated by the position just before the package type in the device number A C indicates the commercial temperature range and an M indicates the military temperature range The military temperature range is available in H package only Note 4 Unless otherwise specified the specifications apply over the full temperature range and for VS e g 20V for the LF411A and for VS e g 15V for the LF411 VOS IB and IOS are measured at VCM e 0 Note 5 The LF411A is 100% tested to this specification The LF411 is sample tested to insure at least 90% of the units meet this specification Note 6 The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature Tj Due to limited production test time the input bias currents measured are correlated to junction temperature In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation PD Tj e TA a ijA PD where ijA is the thermal resistance from junction to ambient Use of a heat sink is recommended if input bias current is to be kept to a minimum Note 7 Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from g 15V to g 5V for the LF411 and from g 20V to g 5V for the LF411A Note 8 RETS 411X for LF411MH and LF411MJ military specifications Note 9 Max Power Dissipation is defined by the package characteristics Operating the part near the Max Power Dissipation may cause the part to operate outside guaranteed limits

Typical Performance Characteristics

Input Bias Current Input Bias Current Supply Current

Positive Common-Mode Input Voltage Limit

Negative Common-Mode Input Voltage Limit

Positive Current Limit

Negative Current Limit

Output Voltage Swing

Output Voltage Swing

TL H 5655 2

Typical Performance Characteristics

Gain Bandwidth

(Continued) Slew Rate

Bode Plot

Distortion vs Frequency

Undistorted Output Voltage Swing

Open Loop Frequency Response

Common-Mode Rejection Ratio

Power Supply Rejection Ratio

Equivalent Input Noise Voltage

Open Loop Voltage Gain

Output Impedance

Inverter Settling Time

TL H 5655 3

Pulse Response RL e 2 kX

CL10 pF

Small Signal Inverting

Small Signal Non-Inverting

Large Signal Inverting

Large Signal Non-Inverting

Current Limit (RL e 100X)

TL H 5655 4

Application Hints
The LF411 series of internally trimmed JFET input op amps (BI-FET IITM ) provide very low input offset voltage and guaranteed input offset voltage drift These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for clamps across the inputs Therefore large differential input voltages can easily be accommodated without a large increase in input current The maximum differential input voltage is independent of the supply voltages However neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to flow which can result in a destroyed unit Exceeding the negative common-mode limit on either input will force the output to a high state potentially causing a reversal of phase to the output Exceeding the negative common-mode limit on both inputs will force the amplifier output to a high state In neither case does a latch occur since raising the input back within the common-mode range again puts the input stage and thus the amplifier in a normal operating mode Exceeding the positive common-mode limit on a single input will not change the phase of the output however if both inputs exceed the limit the output of the amplifier may be forced to a high state 5

Application Hints (Continued)

The amplifier will operate with a common-mode input voltage equal to the positive supply however the gain bandwidth and slew rate may be decreased in this condition When the negative common-mode voltage swings to within 3V of the negative supply an increase in input offset voltage may occur The LF411 is biased by a zener reference which allows normal circuit operation on g 4 5V power supplies Supply voltages less than these may result in lower gain bandwidth and slew rate The LF411 will drive a 2 kX load resistance to g 10V over the full temperature range If the amplifier is forced to drive heavier load currents however an increase in input offset voltage may occur on the negative voltage swing and finally reach an active current limit on both positive and negative swings Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed unit As with most amplifiers care should be taken with lead dress component placement and supply decoupling in order to ensure stability For example resistors from the output to an input should be placed with the body close to the input to minimize pick-up and maximize the frequency of the feedback pole by minimizing the capacitance from the input to ground A feedback pole is created when the feedback around any amplifier is resistive The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed loop gain and consequently there is negligible effect on stability margin However if the feedback pole is less than approximately 6 times the expected 3 dB frequency a lead capacitor should be placed from the output to the input of the op amp The value of the added capacitor should be such that the RC time constant of this capacitor and the resistance it parallels is greater than or equal to the original feedback pole time constant

Typical Applications
High Speed Current Booster

PNP e 2N2905 NPN e 2N2219 unless noted TO-5 heat sinks for Q6-Q7
TL H 5655 9

Typical Applications (Continued)

10-Bit Linear DAC with No VOS Adjust

VOUT e b VREF

b 10V s VREF s 10V

2

A1

A2 A3 a a 4 8

A10 1024

0 s VOUT s b

1023 VREF 1024

where AN e 1 if the AN digital input is high AN e 0 if the AN digital input is low

Single Supply Analog Switch with Buffered Output

Detailed Schematic

TL H 5655 10

a
FEATURES Low Noise: 80 nV p-p (0.1 Hz to 10 Hz), 3 nV/Hz Low Drift: 0.2 V/ C High Speed: 2.8 V/ s Slew Rate, 8 MHz Gain Bandwidth Low VOS: 10 V Excellent CMRR: 126 dB at VCM of 11 V High Open-Loop Gain: 1.8 Million Fits 725, OP07, 5534A Sockets Available in Die Form GENERAL DESCRIPTION

Low-Noise, Precision Operational Amplifier OP27

PIN CONNECTIONS TO-99 (J-Suffix)
BAL BAL 1 IN 2 +IN 3 V+ OUT NC

OP27

The OP27 precision operational amplifier combines the low offset and drift of the OP07 with both high speed and low noise. Offsets down to 25 mV and maximum drift of 0.6 mV/C, makes the OP27 ideal for precision instrumentation applications. Exceptionally low noise, en = 3.5 nV/Hz, at 10 Hz, a low 1/f noise corner frequency of 2.7 Hz, and high gain (1.8 million), allow accurate high-gain amplification of low-level signals. A gain-bandwidth product of 8 MHz and a 2.8 V/msec slew rate provides excellent dynamic accuracy in high-speed, dataacquisition systems. A low input bias current of 10 nA is achieved by use of a bias-current-cancellation circuit. Over the military temperature range, this circuit typically holds IB and IOS to 20 nA and 15 nA, respectively. The output stage has good load driving capability. A guaranteed swing of 10 V into 600 W and low output distortion make the OP27 an excellent choice for professional audio applications.
(Continued on page 7)

4V (CASE) NC = NO CONNECT

8-Pin Hermetic DIP (Z-Suffix) Epoxy Mini-DIP (P-Suffix) 8-Pin SO (S-Suffix)

VOS TRIM 1 IN 2 +IN 3 V 4
8 7 6 5

OP27

VOS TRIM V+ OUT NC

NC = NO CONNECT

SIMPLIFIED SCHEMATIC
V+ R3 Q6 R1* 1 8 R4 R2* C2 Q22 Q21 R23 Q23 R24 Q24 R9 Q20 Q1A NONINVERTING INPUT (+) Q3 INVERTING INPUT () *R1 AND R2 ARE PERMANENTLY ADJUSTED AT WAFER TEST FOR MINIMUM OFFSET VOLTAGE. V Q11 Q12 Q27 Q28 Q26 Q45 Q1B Q2B Q2A R5 C3 R12 C4 Q19 OUTPUT C1 Q46

VOS ADJ.

REV. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 2003 Analog Devices, Inc. All rights reserved.

OP27SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ V = 15 V, T = 25C, unless otherwise noted.)
S A

Parameter INPUT OFFSET VOLTAGE1 LONG-TERM VOS STABILITY2, 3 INPUT OFFSET CURRENT INPUT BIAS CURRENT INPUT NOISE VOLTAGE3, 4 INPUT NOISE Voltage Density3 INPUT NOISE Current Density3, 5 INPUT RESISTANCE Differential-Mode6 Common-Mode INPUT VOLTAGE RANGE

Symbol VOS VOS/Time IOS IB en p-p en

Conditions

Min

OP27A/E Typ Max 10 0.2 7 10 25 1.0 35 40 0.18 5.5 4.5 3.8 4.0 2.3 0.6

Min

OP27F Typ Max 20 0.3 9 12 0.08 3.5 3.1 3.0 1.7 1.0 0.4 60 1.5 50 55 0.18 5.5 4.5 3.8 4.0 2.3 0.6

Min

OP27C/G Typ Max 30 0.4 12 15 0.09 3.8 3.3 3.2 1.7 1.0 0.4 100 2.0 75 80 0.25 8.0 5.6 4.5

Unit mV mV/MO nA nA mV p-p nV/Hz nV/Hz nV/Hz pA/Hz pA/Hz pA/Hz MW GW V dB

0.1 Hz to 10 Hz fO = 10 Hz fO = 30 Hz fO = 1000 Hz fO = 10 Hz fO = 30 Hz fO = 1000 Hz

0.08 3.5 3.1 3.0 1.7 1.0 0.4

in

0.6

RIN RINCM IVR VCM = 11 V VS = 4 V to 18 V RL 2 kW, VO = 10 V RL 600 W, VO = 10 V RL 2 kW RL 600 W RL 2 kW

1.3

6 3

0.94

5 2.5

0.7

4 2

11.0 12.3 114 126 1 1000 800 1800 1500 10

11.0 12.3 106 123 1 1000 800 1800 1500 10

11.0 12.3 100 120 2 700 600 1500 1500 20

COMMON-MODE REJECTION RATIO CMRR POWER SUPPLY PSRR REJECTION RATIO LARGE-SIGNAL VOLTAGE GAIN AVO

mV/V V/mV V/mV V V V/ms

OUTPUT VOLTAGE SWING SLEW RATE7 GAIN BANDWIDTH PRODUCT7 OPEN-LOOP OUTPUT RESISTANCE POWER CONSUMPTION OFFSET ADJUSTMENT RANGE

VO SR

12.0 13.8 10.0 11.5 1.7 2.8

12.0 13.8 10.0 11.5 1.7 2.8

11.5 13.5 10.0 11.5 1.7 2.8

GBW

5.0

8.0

5.0

8.0

5.0

8.0

MHz

RO Pd

VO = 0, IO = 0 VO RP = 10 kW

70 90 140

70 90 140

70 100 170

W mW

4.0

4.0

4.0

mV

NOTES 1 Input offset voltage measurements are performed ~ 0.5 seconds after application of power. A/E grades guaranteed fully warmed up. 2 Long-term input offset voltage stability refers to the average trend line of V OS versus. Time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in V OS during the first 30 days are typically 2.5 mV. Refer to typical performance curve. 3 Sample tested. 4 See test circuit and frequency response curve for 0.1 Hz to 10 Hz tester. 5 See test circuit for current noise measurement. 6 Guaranteed by input bias current. 7 Guaranteed by design.

REV. C

OP27 ELECTRICAL CHARACTERISTICS

Parameter INPUT OFFSET VOLTAGE1 AVERAGE INPUT OFFSET DRIFT INPUT OFFSET CURRENT INPUT BIAS CURRENT INPUT VOLTAGE RANGE Symbol VOS TCVOS2 TCVOSn3 IOS IB IVR VCM = 10 V VS = 4.5 V to 18 V RL 2 kW, VO = 10 V 600 RL 2 kW 11.5 10.3 108

(@ VS = 15 V, 55C TA 125C, unless otherwise noted.)

Min OP27A Typ 30 Max 60 Min OP27C Typ 70 Max 300 Unit mV

Conditions

0.2 15 20 11.5 122 2 1200 13.5

0.6 50 60 10.2 94 16 300 10.5

4 30 35 11.5 118 4 800 13.0

1.8 135 150

mV/C nA nA V dB

COMMON-MODE REJECTION RATIO CMRR POWER SUPPLY REJECTION RATIO PSRR LARGE-SIGNAL VOLTAGE GAIN OUTPUT VOLTAGE SWING AVO VO

51

mV/V V/mV V

NOTES 1 Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully warmed up. 2 The TCVOS performance is within the specifications unnulled or when nulled with R P = 8 kW to 20 kW. TCVOS is 100% tested for A/E grades, sample tested for C/F/G grades. 3 Guaranteed by design.

REV. C

OP27
ELECTRICAL CHARACTERISTICS
Parameter INPUT ONSET VOLTAGE AVERAGE INPUT OFFSET DRIFT INPUT OFFSET CURRENT INPUT BIAS CURRENT INPUT VOLTAGE RANGE Symbol VOS TCVOS1 TCVOSn2 IOS IB IVR VCM = 10 V VS = 4.5 V to 18 V RL 2 kW, VO = 10 V RL 2 kW 10.5 110 Conditions

(@ VS = 15 V, 25C TA 85C for OP27J, OP27Z, 0C TA 70C for OP27EP, OP27FP, and 40C TA 85C for OP27GP, OP27GS, unless otherwise noted.)
Min OP27E Typ 20 0.2 0.2 10 14 11.8 124 2 15 Max 50 0.6 0.6 50 60 Min OP27F Typ Max 40 0.3 0.3 14 18 10.5 11.8 102 121 2 16 140 1.3 1.3 85 95 Min OP27G Typ Max 55 04 04 20 25 10.5 11.8 96 118 2 32 220 1.8 1.8 135 150 Unit mV mV/C mV/C nA nA V dB mV/V

COMMON-MODE REJECTION RATIO CMRR POWER SUPPLY REJECTION RATIO PSRR LARGE-SIGNAL VOLTAGE GAIN OUTPUT VOLTAGE SWING

AVO

750 11.7

1500 13.6

700

1300

450

1000

V/mV V

VO

11.4 13.5

11.0 13.3

NOTES 1 The TCVOS performance is within the specifications unnulled or when nulled with R P = 8 kW to 20 kW. TCVOS is 100% tested for A/E grades, sample tested for C/F/G grades. 2 Guaranteed by design.

REV. C

OP27
DIE CHARACTERISTICS
1. 2. 3. 4. 6. 7. 8. NULL () INPUT (+) INPUT V OUTPUT V+ NULL

1
1990
1427U

7 4 6

WAFER TEST LIMITS

Parameter

(@ VS = 15 V, TA = 25C unless otherwise noted.)

Symbol VOS IOS IB IVR CMRR PSRR AVO AVO VO VO Pd VCM = IVR VS = 4 V to 18 V RL 2 kW, VO = 10 V RL 600 W, VO = 10 V RL 2 kW RL2600n VO = 0 Conditions OP27N Limit 35 35 40 11 114 10 1000 800 12.0 10.0 140 OP27G Limit 60 50 55 11 106 10 1000 800 12.0 10.0 140 OP27GR Limit 100 75 80 11 100 20 700 600 +11.5 10.0 170 Unit mV Max nA Max nA Max V Min dB Min mV/V Max V/mV Min V/mV Min V Min V Min mW Max

INPUT OFFSET VOLTAGE* INPUT OFFSET CURRENT INPUT BIAS CURRENT INPUT VOLTAGE RANGE COMMON-MODE REJECTION RATIO POWER SUPPLY LARGE-SIGNAL VOLTAGE GAIN OUTPUT VOLTAGE SWING POWER CONSUMPTION

NOTE *Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

REV. C

OP27
TYPICAL ELECTRICAL CHARACTERISTICS (@ V = 15 V, T = 25C unless otherwise noted.)
S A

Parameter AVERAGE INPUT OFFSET VOLTAGE DRIFT* AVERAGE INPUT OFFSET CURRENT DRIFT AVERAGE INPUT BIAS CURRENT DRIFT INPUT NOISE VOLTAGE DENSITY

Symbol TCVOS or TCVOSn TCIOS TCIB en en en in in in enp-p SR GBW

Conditions Nulled or Unnulled RP = 8 kW to 20 kW

OP27N Typical 0.2

OP27G Typical 0.3

OP27GR Typical 0.4

Unit mV/C pA/C pA/C nV/Hz nV/Hz nV/Hz pA/Hz pA/Hz pA/Hz mV p-p V/ms MHz

80 100 fO = 10 Hz fO = 30 Hz fO = 1000 Hz fO = 10 Hz fO = 30 Hz fO = 1000 Hz 0.1 Hz to 10 Hz RL 2 kW 3.5 3.1 3.0 1.7 1.0 0.4 0.08 2.8 8

130 160 3.5 3.1 3.0 1.7 1.0 0.4 0.08 2.8 8

180 200 3.8 3.3 3.2 1.7 1.0 0.4 0.09 2.8 8

INPUT NOISE CURRENT DENSITY

INPUT NOISE VOLTAGE SLEW RATE GAIN BANDWIDTH PRODUCT

NOTE *Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.

REV. C

OP27
(Continued from page 1)

PSRR and CMRR exceed 120 dB. These characteristics, coupled with long-term drift of 0.2 mV/month, allow the circuit designer to achieve performance levels previously attained only by discrete designs. Low-cost, high-volume production of OP27 is achieved by using an on-chip Zener zap-trimming network. This reliable and stable offset trimming scheme has proved its effectiveness over many years of production history.

The OP27 provides excellent performance in low-noise, highaccuracy amplification of low-level signals. Applications include stable integrators, precision summing amplifiers, precision voltagethreshold detectors, comparators, and professional audio circuits such as tape-head and microphone preamplifiers. The OP27 is a direct replacement for 725, OP06, OP07, and OP45 amplifiers; 741 types may be directly replaced by removing the 741s nulling potentiometer.

ABSOLUTE MAXIMUM RATINGS 4

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Input Voltage1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . 0.7 V Differential Input Current2 . . . . . . . . . . . . . . . . . . . . 25 mA Storage Temperature Range . . . . . . . . . . . . 65C to +150C Operating Temperature Range OP27A, OP27C (J, Z) . . . . . . . . . . . . . . . . 55C to +125C OP27E, OP27F (J, Z) . . . . . . . . . . . . . . . . . 25C to +85C OP27E, OP27F (P) . . . . . . . . . . . . . . . . . . . . . . 0C to 70C OP27G (P, S, J, Z) . . . . . . . . . . . . . . . . . . 40C to +85C Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300C Junction Temperature . . . . . . . . . . . . . . . . . 65C to +150C

Package Type TO 99 (J) 8-Lead Hermetic DlP (Z) 8-Lead Plastic DIP (P) 20-Contact LCC (RC) 8-Lead SO (S)

JA3 150 148 103 98 158

JC 18 16 43 38 43

Unit C/W C/W C/W C/W C/W

NOTES 1 For supply voltages less than 22 V, the absolute maximum input voltage is equal to the supply voltage. 2 The OP27s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds 0.7 V, the input current should be limited to 25 mA. 3 JA is specified for worst-case mounting conditions, i.e., JA is specified for device in socket for TO, CERDIP, and P-DIP packages; JA is specified for device soldered to printed circuit board for SO package. 4 Absolute Maximum Ratings apply to both DICE and packaged parts, unless otherwise noted.

ORDERING INFORMATION 1

Package TA = 25C VOS Max (mV) 25 25 60 100 100 100 CERDIP 8-Lead OP27AZ2 OP27EZ OP27CZ3 OP27GZ Plastic 8-Lead OP27EP OP27FP3 OP27GP OP27GS4 Operating Temperature Range MIL IND/COM IND/COM MIL XIND XIND

TO-99 OP27AJ2, 3 OP27EJ2, 3

OP27GJ

NOTES 1 Burn-in is available on commercial and industrial temperature range parts in CERDIP, plastic DIP, and TO-can packages. 2 For devices processed in total compliance to MIL-STD-883, add /883 after part number. Consult factory for 883 data sheet. 3 Not for new design; obsolete April 2002. 4 For availability and burn-in information on SO and PLCC packages, contact your local sales office.

CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP27 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!
ESD SENSITIVE DEVICE

REV. C

OP27Typical Performance Characteristics

100 90

VOLTAGE NOISE nV/ Hz

80
GAIN dB

5 4 3 I/F CORNER = 2.7Hz

70 60 50 40 30 0.01 TEST TIME OF 10sec FURTHER LIMITS LOW FREQUENCY (<0.1Hz) GAIN

VOLTAGE NOISE nV/ Hz

10 9 8 7 6

TA = 25C VS = 15V

100 741

I/F CORNER 10 I/F CORNER = LOW NOISE 2.7Hz AUDIO OP AMP OP27 I/F CORNER INSTRUMENTATION AUDIO RANGE RANGE TO DC TO 20kHz

1
1 10 100 FREQUENCY Hz 1k

0.1

1 10 FREQUENCY Hz

100

10 100 FREQUENCY Hz

1k

TPC 1. 0.1 Hz to 10 Hzp-p Noise Tester Frequency Response

TPC 2. Voltage Noise Density vs. Frequency

TPC 3. A Comparison of Op Amp Voltage Noise Spectra

10 TA = 25C VS = 15V

100

TA = 25C VS = 15V

R1 R2 RS 2R1

5 VS = 15V

RMS VOLTAGE NOISE V

VOLTAGE NOISE nV/ Hz

TOTAL NOISE nV/ Hz

4 AT 10Hz

10

3 AT 1kHz

0.1

AT 10Hz AT 1kHz RESISTOR NOISE ONLY

0.01 100

1k 10k BANDWIDTH Hz

100k

1 100

1k SOURCE RESISTANCE

10k

1 50

25

0 25 50 75 TEMPERATURE C

100

125

TPC 4. Input Wideband Voltage Noise vs. Bandwidth (0.1 Hz to Frequency Indicated)

TPC 5. Total Noise vs. Sourced Resistance

TPC 6. Voltage Noise Density vs. Temperature

TA = 25C

10.0

5.0

CURRENT NOISE pA/ Hz

VOLTAGE NOISE nV/ Hz

4 AT 10Hz AT 1kHz 3

SUPPLY CURRENT mA

4.0 TA = +125C 3.0 TA = 55C 2.0 TA = +25C

1.0

I/F CORNER = 140Hz 1 0.1 10

10

20

30

40

TOTAL SUPPLY VOLTAGE (V+ V) V

100 1k FREQUENCY Hz

10k

1.0

15 25 35 TOTAL SUPPLY VOLTAGE V

45

TPC 7. Voltage Noise Density vs. Supply Voltage

TPC 8. Current Noise Density vs. Frequency

TPC 9. Supply Current vs. Supply Voltage

REV. C

OP27
CHANGE IN INPUT OFFSET VOLTAGE V

60 50 40
OFFSET VOLTAGE V

OP27C
CHANGE IN OFFSET VOLTAGE V

6 4 2 0 2 4 6 6 4 2 0 2 4 6 0 1 2 3 4 5 6 7 TIME Months

TA = 25C VS = 15V

30 20 10 0 10 20 30 40 50 60 TRIMMING WITH 10k POT DOES NOT CHANGE TCVOS

OP27A

10
OP27 C/G
OP27 F

OP27A OP27A

OP27 A/E

70 75 50 25

OP27C

0 25 50 75 100 125 150 175 TEMPERATURE C

TIME AFTER POWER ON Min

TPC 10. Offset Voltage Drift of Five Representative Units vs. Temperature

TPC 11. Long-Term Offset Voltage Drift of Six Representative Units

TPC 12. Warm-Up Offset Voltage Drift

30 VS = 15V TA = 70C
INPUT BIAS CURRENT nA

50 VS = 15V
INPUT OFFSET CURRENT nA

50 VS = 15V 40

25

OPEN-LOOP GAIN dB

20

TA = 25C

40

30

30

15
THERMAL SHOCK RESPONSE BAND

20 OP27C 10 OP27A 0

20 OP27C 10 OP27A

10 5 0 20

DEVICE IMMERSED IN 70C OIL BATH

20

40 TIME Sec

60

80

100

50 25

25

50

75

100 125 150

0 75 50

TEMPERATURE C

25 0 25 50 75 TEMPERATURE C

100

125

TPC 13. Offset Voltage Change Due to Thermal Shock

TPC 14. Input Bias Current vs. Temperature

TPC 15. Input Offset Current vs. Temperature

130 110
VOLTAGE GAIN dB

PHASE MARGIN Degrees

25
10

70

GAIN BANDWIDTH PRODUCT MHz

20 GAIN 15

TA = 25C VS = 15V

80 100 120

90 70 50 30 10 10

VS = 15V

60

GAIN dB

10 5 0 5

50

GBW

PHASE MARGIN = 70

140 160 180 200 220 100M

SLEW RATE V/s

SLEW

2
75

10

100

1k 10k 100k 1M 10M 100M FREQUENCY Hz

50 25

25

50

75

6 100 125

10 1M

TEMPERATURE C

10M FREQUENCY Hz

TPC 16. Open-Loop Gain vs. Frequency

TPC 17. Slew Rate, Gain-Bandwidth Product, Phase Margin vs. Temperature

TPC 18. Gain, Phase Shift vs. Frequency

REV. C

PHASE SHIFT Degrees

OP27
2.5 TA = 25C
PEAK-TO-PEAK AMPLITUDE V

28 24 20 16 12 8 4 0 1k

TA = 25C VS = 15V MAXIMUM OUTPUT V

18 16 14 12 10 8 6 4 2 0 TA = 25C VS = 15V 1k LOAD RESISTANCE 10k NEGATIVE SWING POSITIVE SWING

OPEN-LOOP GAIN V/V

2.0 RL = 2k 1.5 RL = 1k 1.0

0.5

10

20

30

40

50

10k

TOTAL SUPPLY VOLTAGE V

100k 1M FREQUENCY Hz

10M

2 100

TPC 19. Open-Loop Voltage Gain vs. Supply Voltage

TPC 20. Maximum Output Swing vs. Frequency

TPC 21. Maximum Output Voltage vs. Load Resistance

100 VS = 15V VIN = 100mV AV = +1

50mV

80

20mV

500ns AVCL = +1 CL = 15pF VS = 15V TA = 25C

2V +5V

2s AVCL = +1 VS = 15V TA = 25C

% OVERSHOOT

60
0V

0V

40
50mV

5V

20

500

1000

1500

2000

2500

CAPACITIVE LOAD pF

TPC 22. Small-Signal Overshoot vs. Capacitive Load

TPC 23. Small-Signal Transient Response

TPC 24. Large-Signal Transient Response

60

140

16
VS = 15V TA = 25C VCM = 10V

SHORT-CIRCUIT CURRENT mA

TA = 25C VS = 15V 50
120

12

TA = 55C TA = +25C

COMMON-MODE RANGE V

8 TA = +125C 4 0 TA = 55C 4 8 12 TA = +125C 5 10 15 20 TA = +25C

40

ISC(+)

CMRR dB

100

30

ISC()
80

20

10

60 100

1k

TIME FROM OUTPUT SHORTED TO GROUND Min

10k 100k FREQUENCY Hz

1M

16

SUPPLY VOLTAGE V

TPC 25. Short-Circuit Current vs. Time

TPC 26. CMRR vs. Frequency

TPC 27. Common-Mode Input Range vs. Supply Voltage

10

REV. C

OP27
0.1F 100k
OPEN-LOOP VOLTAGE GAIN V/V

2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6

TA = 25C VS = 15V
1 SEC/DIV 120 VOLTAGE NOISE nV 80 40 0 40 90 120

OP27 10 D.U.T.
VOLTAGE GAIN = 50,000 4.7F

2k 4.3k 22F SCOPE 1 RIN = 1M 110k

OP12 100k

0.1F 2.2F 24.3k

0.4 100

0.1Hz to 10Hz p-p NOISE

1k 10k LOAD RESISTANCE

100k

TPC 28. Voltage Noise Test Circuit (0.1 Hz to 10 Hz)

TPC 29. Open-Loop Voltage Gain vs. Load Resistance

TPC 30. Low-Frequency Noise

160
POWER SUPPLY REJECTION RATIO dB

140 120 100 80 60 40 20 0 POSITIVE SWING NEGATIVE SWING

TA = 25C

10

100

1k 10k 100k 1M 10M 100M FREQUENCY Hz

TPC 31. PSRR vs. Frequency

APPLICATION INFORMATION OFFSET VOLTAGE ADJUSTMENT

OP27 series units may be inserted directly into 725 and OP07 sockets with or without removal of external compensation or nulling components. Additionally, the OP27 may be fitted to unnulled 741-type sockets; however, if conventional 741 nulling circuitry is in use, it should be modified or removed to ensure correct OP27 operation. OP27 offset voltage may be nulled to zero (or another desired setting) using a potentiometer (see Figure 1). The OP27 provides stable operation with load capacitances of up to 2000 pF and 10 V swings; larger capacitances should be decoupled with a 50 W resistor inside the feedback loop. The OP27 is unity-gain stable. Thermoelectric voltages generated by dissimilar metals at the input terminal contacts can degrade the drift performance. Best operation will be obtained when both input contacts are maintained at the same temperature.
10k RP V+

The input offset voltage of the OP27 is trimmed at wafer level. However, if further adjustment of VOS is necessary, a 10 kW trim potentiometer can be used. TCVOS is not degraded (see Offset Nulling Circuit). Other potentiometer values from 1 kW to 1 MW can be used with a slight degradation (0.1 mV/C to 0.2 mV/C) of TCVOS. Trimming to a value other than zero creates a drift of approximately (VOS/300) mV/C. For example, the change in TCVOS will be 0.33 mV/C if VOS is adjusted to 100 mV. The offset voltage adjustment range with a 10 kW potentiometer is 4 mV. If smaller adjustment range is required, the nulling sensitivity can be reduced by using a smaller pot in conjuction with fixed resistors. For example, Figure 2 shows a network that will have a 280 mV adjustment range.
1 4.7k 1k POT 4.7k 8

V+

Figure 2. Offset Voltage Adjustment

OP27
+

OUTPUT

Figure 1. Offset Nulling Circuit

REV. C

11

OP27
NOISE MEASUREMENTS

To measure the 80 nV peak-to-peak noise specification of the OP27 in the 0.1 Hz to 10 Hz range, the following precautions must be observed: 1. The device must be warmed up for at least five minutes. As shown in the warm-up drift curve, the offset voltage typically changes 4 mV due to increasing chip temperature after power-up. In the 10-second measurement interval, these temperature-induced effects can exceed tens-ofnanovolts. 2. For similar reasons, the device has to be well-shielded from air currents. Shielding minimizes thermocouple effects. 3. Sudden motion in the vicinity of the device can also feedthrough to increase the observed noise. 4. The test time to measure 0.1 Hz to 10 Hz noise should not exceed 10 seconds. As shown in the noise-tester frequency response curve, the 0.1 Hz corner is defined by only one zero. The test time of 10 seconds acts as an additional zero to eliminate noise contributions from the frequency band below 0.1 Hz. 5. A noise-voltage-density test is recommended when measuring noise on a large number of units. A 10 Hz noise-voltagedensity measurement will correlate well with a 0.1 Hz to 10 Hz peak-to-peak noise reading, since both results are determined by the white noise and the location of the 1/f corner frequency. When R f 100 W and the input is driven with a fast, large signal pulse (>1 V), the output waveform will look as shown in the pulsed operation diagram (Figure 3). During the fast feedthrough-like portion of the output, the input protection diodes effectively short the output to the input and a current, limited only by the output short-circuit protection, will be drawn by the signal generator. With Rf 500 W, the output is capable of handling the current requirements (IL 20 mA at 10 V); the amplifier will stay in its active mode and a smooth transition will occur. When Rf > 2 kW, a pole will be created with Rf and the amplifiers input capacitance (8 pF) that creates additional phase shift and reduces phase margin. A small capacitor (20 pF to 50 pF) in parallel with R f will eliminate this problem.
Rf

bias and offset currents, which would normally increase, are held to reasonable values by the input bias-current cancellation circuit. The OP27A/E has IB and IOS of only 40 nA and 35 nA at 25C respectively. This is particularly important when the input has a high source resistance. In addition, many audio amplifier designers prefer to use direct coupling. The high IB, VOS, and TCVOS of previous designs have made direct coupling difficult, if not impossible, to use. Voltage noise is inversely proportional to the square root of bias current, but current noise is proportional to the square root of bias current. The OP27s noise advantage disappears when high source-resistors are used. Figures 4, 5, and 6 compare OP27s observed total noise with the noise performance of other devices in different circuit applications.
(Voltage Noise)2 + 2 Total Noise = (Current Noise RS ) + 2 (Resistor Noise)
1/2

Figure 4 shows noise versus source-resistance at 1000 Hz. The same plot applies to wideband noise. To use this plot, multiply the vertical scale by the square root of the bandwidth.
100

50

UNITY-GAIN BUFFER APPLICATIONS

1
TOTAL NOISE nV/ Hz

OP08/108 2 OP07 10
1 RS e.g. RS 2 RS e.g. RS UNMATCHED = R S1 = 10k, R S2 = 0 MATCHED = 10k, R S1 = R S2 = 5k RS1

5534 OP27/37 REGISTER NOISE ONLY 100

RS2

1 50

10k 500 1k 5k RS SOURCE RESISTANCE

50k

Figure 4. Noise vs. Source Resistance (Including Resistor Noise) at 1000 Hz

OP27
+

2.8V/s

At RS <1 kW, the OP27s low voltage noise is maintained. With RS <1 kW, total noise increases, but is dominated by the resistor noise rather than current or voltage noise. lt is only beyond RS of 20 kW that current noise starts to dominate. The argument can be made that current noise is not important for applications with low to moderate source resistances. The crossover between the OP27, OP07, and OP08 noise occurs in the 15 kW to 40 kW region. Figure 5 shows the 0.1 Hz to 10 Hz peak-to-peak noise. Here the picture is less favorable; resistor noise is negligible and current noise becomes important because it is inversely proportional to the square root of frequency. The crossover with the OP07 occurs in the 3 kW to 5 kW range depending on whether balanced or unbalanced source resistors are used (at 3 kW the IB and IOS error also can be three times the VOS spec.).

Figure 3. Pulsed Operation

COMMENTS ON NOISE

The OP27 is a very low-noise monolithic op amp. The outstanding input voltage noise characteristics of the OP27 are achieved mainly by operating the input stage at a high quiescent current. The input

12

REV. C

OP27
1k OP08/108 500 5534 50 1 2 OP08/108 100

OP07
p-p NOISE nV

1 100 OP27/37 50 2
1 RS e.g. RS 2 RS e.g. RS UNMATCHED = R S1 = 10k, R S2 = 0 MATCHED = 10k, R S1 = R S2 = 5k RS1

TOTAL NOISE nV/ Hz

10

OP07 5534

5 OP27/37

1 RS e.g. RS 2 RS e.g. RS

UNMATCHED = R S1 = 10k, R S2 = 0 MATCHED = 10k, R S1 = R S2 = 5k RS1

REGISTER NOISE ONLY 10 50 100

RS2

REGISTER NOISE ONLY 50k 1 50 100

RS2

10k 500 1k 5k RS SOURCE RESISTANCE

10k 500 1k 5k RS SOURCE RESISTANCE

50k

Figure 5. Peak-to-Peak Noise (0.1 Hz to 10 Hz) as Source Resistance (Includes Resistor Noise)

Figure 6. 10 Hz Noise vs. Source Resistance (Includes Resistor Noise)

AUDIO APPLICATIONS

Therefore, for low-frequency applications, the OP07 is better than the OP27/OP37 when RS > 3 kW. The only exception is when gain error is important. Figure 6 illustrates the 10 Hz noise. As expected, the results are between the previous two figures. For reference, typical source resistances of some signal sources are listed in Table I.
Table I.

The following applications information has been abstracted from a PMI article in the 12/20/80 issue of Electronic Design magazine and updated. Figure 7 is an example of a phono pre-amplifier circuit using the OP27 for A1; R1-R2-C1-C2 form a very accurate RIAA network with standard component values. The popular method to accomplish RIAA phono equalization is to employ frequencydependent feedback around a high-quality gain block. Properly chosen, an RC network can provide the three necessary time constants of 3180, 318, and 75 ms.1 For initial equalization accuracy and stability, precision metal film resistors and film capacitors of polystyrene or polypropylene are recommended since they have low voltage coefficients, dissipation factors, and dielectric absorption.4 (High-K ceramic capacitors should be avoided here, though low-K ceramics such as NPO types, which have excellent dissipation factors and somewhat lower dielectric absorptioncan be considered for small values.)
C4 (2) 220F + + MOVING MAGNET CARTRIDGE INPUT Ra 47.5k Ca 150pF LF ROLLOFF OUT R5 100k

Device Strain Gauge Magnetic Tapehead

Source Impedance <500 W <1500 W

Comments Typically used in lowfrequency applications. Low is very important to reduce self-magnetization problems when direct coupling is used. OP27 IB can be neglected. Similar need for low IB in direct coupled applications. OP27 will not introduce any self-magnetization problem. Used in rugged servo-feedback applications. Bandwidth of interest is 400 Hz to 5 kHz.

Magnetic Phonograph Cartridges

<1500 W

Linear Variable <1500 W Differential Transformer

A1 OP27

C3 0.47F

IN

R1 97.6k

R4 75k C1 0.03F C2 0.01F

OUTPUT

Open-Loop Gain

Frequency at 3 Hz 10 Hz 30 Hz

OP07 100 dB 100 dB 90 dB

OP27 124 dB 120 dB 110 dB

OP37 125 dB 125 dB 124 dB

R2 7.87k R3 100

For further information regarding noise calculations, see Minimization of Noise in Op Amp Applications, Application Note AN-15.

G = 1kHz GAIN R1 = 0.101 ( 1 + ) R3 = 98.677 (39.9dB) AS SHOWN

Figure 7. Phono Preamplifier Circuit

REV. C

13

OP27
The OP27 brings a 3.2 nV/Hz voltage noise and 0.45 pA/Hz current noise to this circuit. To minimize noise from other sources, R3 is set to a value of 100 W, which generates a voltage noise of 1.3 nV/Hz. The noise increases the 3.2 nV/Hz of the amplifier by only 0.7 dB. With a 1 kW source, the circuit noise measures 63 dB below a 1 mV reference level, unweighted, in a 20 kHz noise bandwidth. Gain (G) of the circuit at 1 kHz can be calculated by the expression: The network values of the configuration yield a 50 dB gain at 1 kHz, and the dc gain is greater than 70 dB. Thus, the worst-case output offset is just over 500 mV. A single 0.47 mF output capacitor can block this level without affecting the dynamic range. The tapehead can be coupled directly to the amplifier input, since the worst-case bias current of 80 nA with a 400 mH, 100 m inch head (such as the PRB2H7K) will not be troublesome. One potential tapehead problem is presented by amplifier biascurrent transients which can magnetize a head. The OP27 and OP37 are free of bias-current transients upon power-up or powerdown. However, it is always advantageous to control the speed of power supply rise and fall, to eliminate transients. In addition, the dc resistance of the head should be carefully controlled, and preferably below 1 kW. For this configuration, the bias-current-induced offset voltage can be greater than the 100pV maximum offset if the head resistance is not sufficiently controlled. A simple, but effective, fixed-gain transformerless microphone preamp ( Figure 9) amplifies differential signals from low impedance microphones by 50 dB, and has an input impedance of 2 kW. Because of the high working gain of the circuit, an OP37 helps to preserve bandwidth, which will be 110 kHz. As the OP37 is a decompensated device (minimum stable gain of 5), a dummy resistor, Rp, may be necessary, if the microphone is to be unplugged. Otherwise the 100% feedback from the open input may cause the amplifier to oscillate. Common-mode input-noise rejection will depend upon the match of the bridge-resistor ratios. Either close-tolerance (0.1%) types should be used, or R4 should be trimmed for best CMRR. All resistors should be metal film types for best stability and low noise. Noise performance of this circuit is limited more by the input resistors R1 and R2 than by the op amp, as R1 and R2 each generate a 4 nV/Hz noise, while the op amp generates a 3.2 nV/Hz noise. The rms sum of these predominant noise sources will be about 6 nV/Hz, equivalent to 0.9 mV in a 20 kHz noise bandwidth, or nearly 61 dB below a 1 mV input signal. Measurements confirm this predicted performance.
R1 1k R3 316k C1 5F R6 100

R1 G = 0.101 1 + R3
For the values shown, the gain is just under 100 (or 40 dB). Lower gains can be accommodated by increasing R3, but gains higher than 40 dB will show more equalization errors because of the 8 MHz gain-bandwidth of the OP27. This circuit is capable of very low distortion over its entire range, generally below 0.01% at levels up to 7 V rms. At 3 V output levels, it will produce less than 0.03% total harmonic distortion at frequencies up to 20 kHz. Capacitor C3 and resistor R4 form a simple 6 dB-per-octave rumble filter, with a corner at 22 Hz. As an option, the switchselected shunt capacitor C4, a nonpolarized electrolytic, bypasses the low-frequency rolloff. Placing the rumble filters high-pass action after the preamp has the desirable result of discriminating against the RlAA-amplified low-frequency noise components and pickup-produced low-frequency disturbances. A preamplifier for NAB tape playback is similar to an RIAA phono preamp, though more gain is typically demanded, along with equalization requiring a heavy low-frequency boost. The circuit in Figure 7 can be readily modified for tape use, as shown by Figure 8.
+
TAPE HEAD Ra Ca 0.47F

OP27
R1 33k R2 5k 10 0.01F

15k

T1 = 3180s T2 = 50s

Figure 8. Tape-Head Preamplifier

LOW IMPEDANCE MICROPHONE INPUT (Z = 50 TO 200 ) R3 = R4 R1 R2 R2 1k

While the tape-equalization requirement has a flat high-frequency gain above 3 kHz (T2 = 50 ms), the amplifier need not be stabilized for unity gain. The decompensated OP37 provides a greater bandwidth and slew rate. For many applications, the idealized time constants shown may require trimming of R1 and R2 to optimize frequency response for nonideal tapehead performance and other factors.5

OP27/ Rp 30k OP37 +

R4 316k

R7 10k

OUTPUT

Figure 9. Fixed Gain Transformerless Microphone Preamplifier

14

REV. C

OP27
For applications demanding appreciably lower noise, a high quality microphone transformer-coupled preamp (Figure 10) incorporates the internally compensated OP27. T1 is a JE-115K-E 150 W/15 kW transformer which provides an optimum source resistance for the OP27 device. The circuit has an overall gain of 40 dB, the product of the transformers voltage setup and the op amps voltage gain.
C2 1800pF R1 121 R2 1100

Capacitor C2 and resistor R2 form a 2 ms time constant in this circuit, as recommended for optimum transient response by the transformer manufacturer. With C2 in use, A1 must have unitygain stability. For situations where the 2 ms time constant is not necessary, C2 can be deleted, allowing the faster OP37 to be employed. Some comment on noise is appropriate to understand the capability of this circuit. A 150 W resistor and R1 and R2 gain resistors connected to a noiseless amplifier will generate 220 nV of noise in a 20 kHz bandwidth, or 73 dB below a 1 mV reference level. Any practical amplifier can only approach this noise level; it can never exceed it. With the OP27 and T1 specified, the additional noise degradation will be close to 3.6 dB (or 69.5 referenced to 1 mV).
References

T1* 150 SOURCE R3 100

A1 OP27

OUTPUT

* T1 JENSEN JE 115K E JENSEN TRANSFORMERS 10735 BURBANK BLVD. N. HOLLYWOOD, CA 91601

1. Lipshitz, S.R, On RIAA Equalization Networks, JAES, Vol. 27, June 1979, p. 458481. 2. Jung, W.G., IC Op Amp Cookbook, 2nd. Ed., H.W. Sams and Company, 1980. 3. Jung, W.G., Audio IC Op Amp Applications, 2nd. Ed., H.W. Sams and Company, 1978. 4. Jung, W.G., and Marsh, R.M., Picking Capacitors, Audio, February and March, 1980. 5. Otala, M., Feedback-Generated Phase Nonlinearity in Audio Amplifiers, London AES Convention, March 1980, preprint 1976. 6. Stout, D.F., and Kautman, M., Handbook of Operational Amplifier Circuit Design, New York, McGraw-Hill, 1976.

Figure 10. High Quality Microphone TransformerCoupled Preamplifier

Gain may be trimmed to other levels, if desired, by adjusting R2 or R1. Because of the low offset voltage of the OP27, the output offset of this circuit will be very low, 1.7 mV or less, for a 40 dB gain. The typical output blocking capacitor can be eliminated in such cases, but is desirable for higher gains to eliminate switching transients.
+18V

OP27

18V

Figure 11. Burn-In Circuit

REV. C

15