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Program, India
Lecture
Advances in Semiconductor
Photonic Devices – Part II
N. R. Das
Institute of Radio Physics and Electronics
University of Calcutta, India
Topics
In Part-I (discussed previously)
a s
D
Introduction: Photonic Device, Nanostructure
.
R
Photon emission process
.
NSource (LED, LASER),
Optical
L Modulator
H E
A P
R
In Part-II (present)
IN
Optical amplification
.
C .
Photon absorption process U
Optical Detector (photodetector)
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 2
Optical Amplifier
Erbium-doped Fiber Amplifier (EDFA)
Transmission fiber
a s Erbium-doped Fiber
Input signal
. D WDM Output
(optical)
. R coupler amplified signal
N
Pump laser
L
H E
Level 3
A P tsp~1ms
Level 2
R Fast decay
IN
1460nm tsp~10ms
1540nm
1480nm
.U .Spontaneous emission
(1500-1600nm)
Level 1
C Stimulated emission
(1500-1600nm)
s
Semiconductor Optical Amplifier
a
. D
Input signal (Light)
. R
N
Population inversion
Stimulation by input EL
I
Amplified light P
H p+
output R
A P+ (confining layer)
IN
Input Output
U
layer
C . n+
Inter-band
R .Conduction Band
(VB CB)
N . CB
Eg
E L Eg '
hν≥Eg
P H hν≥Eg' VB
R A
Valence Band
∆n=±0
IN .
.U
CB
Intra-band (Inter subband)
(subband subband)
∆n=±1
C VB
Subbands
.
Internal gain
pn,
p-i-n,
Schottky, C . U Photoconductor,
APD,
Phototransistor,
MSM, … …
.
-- ++
– Large region undepleted -- ++
N
-- ++
L
--
– Non-uniform field, Bias-dependent P --
++
++ N
depletion
H E Diffusion Drift Diffusion
• Solution A P p+ n E
R
IN
p n, pn structures
+ + - +
0 x
Non-uniform field
.U .
p-i-n structure
(next)
C
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 7
pin Photodiode
W
a s
- p
. D i n +
. R
N L
E
H E
A P
R
x
IN
Uniform field in i-region, Depletion at Low bias
.
.U
W~ i-layer thickness (~ Bias-independent)
Large bandwidth, low noise
No gain
C
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 8
Avalanche Photodiode (APD)
p-n junction
a s
D
Ionizing electron
- P
R . N +
N .
Ecr
Ionization region
E L
E P H
R A Gain
Avalanche
0
INx
.
.U
Multiplication Bias
C
Large Gain
Hole Large noise
Electron Low BW at high gain
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 9
Schottky, M-S-M PDs
Schottky
Easy to fabricate, High speed a s
. D
No gain, Undesirable spectral response
. R
Semiconductor
N
Metal
L
Metal (+)
n- n
H E
-
A
+
P Semiconductor
VR
R
IN
Metal (-)
M-S-M (Metal-Semiconductor-Metal)
Ultra-low capacitance, Large bandwidth
.U .
Good Integrability with HEMT, HBT
Manufacturing limitation
C
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 10
Phototransistor
a s
. D
n p
. R n
N L
E B C
H E
• Light incident on base
• Reverse biased B-C junction
A P separates carriers
R • Gain: Transistor action
IN • Uniform gain with bias
.
.U
• Large dark current,
C
moderate BW
. D
V
W
R
-- ++ I0 R
.
-- ++
p -- ++ n
N
-- ++
L
-- ++
E
h
e
P H
diffusion drift diffusion
R A
η = σ (1 − R ){1 − exp(−αW )}
IN .
.U
σ – conversion efficiency (Eg~hν)
C
R– Reflection coeff. (AR coating)
α – Abs. Coeff. (Material/band-gap)
. R V
W
N L
--
--
++
++ I0 R
E
p -- ++ n
-- ++
H
-- ++
P
Transit-time limited h
Bandwidth
A
e
Overall
IN
RC limited
d
. U . BW
(APD)
C Gain
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 13
PD Performance
Noise
Thermal/JohnsonD a s
Noise
R .
.
Material, structure
N / Generation-recombination
Shot Noise
E L (GR)
Noise
P H
Flicker (1/f) Noise
R A
IN
Noise
. U . 1/f GR Johnson
R
QE ↑ as d ↑
.
N
Dielectric
Solution !
L
Stack (R1)
RCE PD
H E p InP
p Contact
Multiple reflections
A P InGaAs d
R
n InP
QE improved
N
InP/
I
Thin layer (d)
.
InGaAsP
DBR (R2)
.U
n Contact
Large BW
Free space optical interconnect
C
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 15
Advanced Structures
EC PDs
a s
D
Lengths (QE, BW) decoupled
High QE = f(.
. R L)
N
Large BW= f(d)
L -
Good coupling
H E P
A P
(Integrated circuit) Absorption layer d
R
N
IN
L
. U . +
Travelling wave PD
C
Waveguide PD, Waveguide-fed PD,
a s
D
P+ InP i - InGaAs N+ InP
R .
N .
hν~Eg
E L
Absorption only in
EG Eg EG
P H i-layer
d
R A Reduced diffusion
IN
absorbing
.
transparent
C .U
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 17
Heterostructure APD
SAGCM APD
a s
. DSeparate Absorption, Grading,
R
-
N .
InP contact Charge and Multiplication
i-InAlAs Multiplication
E L
n+-InAlAs Charge
P H
i-InGaAlAs Grading
R A
i-InGaAs Absorption
IN • Reduced tunneling
.
• Reduced hetero-interface trapping
InP
+
.U
• To use undoped multiple layer
C
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 18
Nanophotonic Detector
Quantum Well PD
RCE Multiple Quantum Well (MQW)
a s
Increased absorption
. D
Top (back) Mirror
. R
N Metal Contact
L
• 1.3µm wavelength
E
P-Si (near-infrared)
P H
i-Si1-xGex (dw)
• SiGe Technology
MQW
R
IN
i-Si1-xGex (dw)
i-Si (dB)
(a)
N-Si
.U
Bottom (front) mirror.
C
N-Si Substrate
Incident Light
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 19
Infrared Detectors
Applications:
a s
Medium /Long wavelength IR (MWIR/LWIR)
. D
• Thermal imaging, Night vision, Millitary, Security,
R
Non-invasive Medical diagnosis, Agriculture, Food Industry,
.
N
Environmental Pollution Monitoring, …
• Materials E L
InSb, InAs (3-5µm) P H
R A
IN
HgCdTe (MCT) (8-14µm)
High absorption coefficient and low thermal emission(>75K),
Light weight
.U .
C
Difficult (low gap) to grow, process, fabricate into devices
Semiconductor Nanostructures (QWIP, …)
Inter-subband transition
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 20
Quantum Well Infrared
Photodetector (QWIP)
a s AlGaAs GaAs AlGaAs
L
n=1
band offset
AlGaAs
H E GaAs
AlGaAs
band-gap
Contact
A P n=1
Band-gap
R
Valence
n=2
IN
band offset
Collector
Transition (Interband)
.U .
Bound to Bound, Continuum,
Quasi-Continuum
C (not to
scale)
as
Current
Tunneling Capture
Thermionic
. D Escape Total Current
emission
. R
N
(Emitter)
Current
E L
Thermal excitaion
P H (Collector)
(dark current)
R A
IN
Photoexcitaion
(photo current)
Balance: (capture/escape)
.U .
GaAs ~ 4.1 nm, Al0.26Ga0.74As ~ 48 nm
C
[APL, 71 , 1997, p.2011]
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 22
QWIP in Use
IR Camera
a s
. D
.
LWIR Handheld QWIP R
N
Camera:GaAs/AlGaAs MQW
L
H E
A P
Thermal Imaging
R
IN .
QWIP-LED with CCD
[IEEE PTL 2002, 182] C .U
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 23
QWIP features
High uniformity
a s
Excellent reproducibility
. D
R
Low power consumption
.
N
High resolution
L
Large format
H E
Fast response time
A P
R
Multi-color detection
IN
No response for normal incidence
.
Large dark current
Low operating temperature C .U
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 24
Problems and Solutions
s
Solving Polarization Problem
a
. D
Manufacturing steps
45º wedgeR
.
N mirror on the backL MQW
H
450
A P
Structure NR
I .
Quantum Wire Infra-red Photodetector (QRIP)
. U
C Photodetector (QDIP)
Quantum Dot Infra-red
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 25
QRIP
a s
Schematic Structure
. D
Emitter
. R
N L
H E
Quantum Wire
A P
(QR)
R
IN .
Collector
C .U
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 26
QDIP Structure
Structure a s
. D
R
N+ - N - N+ diode
structure
N .
Undoped InAs QDs
(small band-gap material)
E L
Undoped N- GaAs layer
P H
(wide-gap barrier)
InGaAs Capping layer
R A
IN
(strain-relieving)
.
[APL 79, 2001, p.3341]
C .U
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 27
QDIP Performance
10-4
D as
Photocurrent (a.u.)
100
.
Dark Current (A)
R
10-6
.
10-1
10-8
N L
E
10-2
H
10-10
10-12
A P 10-3
R
IN
Detectivity: Noise current
.
[APL 83, 2003, p752]
a s
Performance
. D
QWIP QRIP QDIP
Sensitivity to
. RVery low Good Good (/ best
N
normal Incidence
L
among the three)
H E
Photoelectric gain Moderate Large Large
Low P High
Operating
Temperature R A High
N R
I
FemSIM,
Cavity mode solver
.
...
C . U
"FIBER OPTIC SERVICES" , Mumbai
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 31
Simulators
SILVACO Device Simulator
a s
ATLAS
. D
. R
2D Simulation Modules
:Luminous (OE Device)
N
:LED, Laser L
H
: Quantum (quantum structures), …E
A
3D Simulation Modules P
: Luminous3D R
IN
: Quantum3D, ...
.
“Integrated Micro Systems -India” C .U
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 32
Summary & Conclusion
a s
Interband and Intersubband Absorption
Photodetector . D
. R
N
Types, Principles, Performance
L
Heterostructure improves performance
H E
A P
Nanophotonic R detectors
IN
Tailorable absorption
.
. U
Infra-red detectors (intersubband
C transition)
Simulation approach
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 33
Some References
P. Bhattacharya, “Semiconductor Optoelectronic
a s
Devices”, PHI (India), New Delhi, 2002.
B. R. Nag, “Physics ofD
R . Quantum Well Devices”, Kluwer
N
D. Bimberg,
.
Academic Publishers, London, 2000.
et al, , “Quantum DotLHeterostructures”,
H
John Wiley & Sons, Chichester, E England, 1999.
A P
J. M. Senior, “Optical Fiber Communication, PHI
(India), 1994. R
IN .
C . U
Aug 7-9, 2009 IEEE NDLP Lecture (NERIST) / NRD(RPE/CU) 34