BTA12-600CW3G, BTA12-800CW3G Triacs

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
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Blocking Voltage to 800 V On-State Current Rating of 12 A RMS at 25C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt 1500 V/ms minimum at 125C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt 1.5 A/ms minimum at 125C Internally Isolated (2500 VRMS) These Devices are PbFree and are RoHS Compliant*
Rating Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 12 105 A A x A Y WW G Value Unit V 1 2

TRIACS 12 AMPERES RMS 600 thru 800 VOLTS

MT2 G 4 MT1

MARKING DIAGRAM

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Peak Repetitive OffState Voltage (Note 1) (TJ = 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) BTA12600CW3G BTA12800CW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25C) Circuit Fusing Consideration (t = 8.3 ms) NonRepetitive Surge Peak OffState Voltage (TJ = 25C, t = 10ms) Peak Gate Current (TJ = 125C, t = 20ms) Peak Gate Power (Pulse Width 1.0 ms, TC = 80C) Average Gate Power (TJ = 125C) Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage (t = 300 ms, R.H. 30%, TA = 25C) BTA12xCWG AYWW

TO220AB CASE 221A STYLE 12

I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg Viso

46 VDSM/VRSM +100 4.0 20 1.0 40 to +125 40 to +150 2500

A2sec V A W W C C V

= 6 or 8 = Assembly Location (Optional)* = Year = Work Week = PbFree Package

* The Assembly Location code (A) is optional. In cases where the Assembly Location is stamped on the package the assembly code may be blank.

PIN ASSIGNMENT
1 2 3 4 Main Terminal 1 Main Terminal 2 Gate No Connection

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

ORDERING INFORMATION
Device BTA12600CW3G Package TO220AB (PbFree) TO220AB (PbFree) Shipping 50 Units / Rail 50 Units / Rail

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

BTA12800CW3G

Semiconductor Components Industries, LLC, 2012

September, 2012 Rev. 1

Publication Order Number: BTA12600CW3/D

BTA12600CW3G, BTA12800CW3G
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase (AC) JunctiontoAmbient Symbol RqJC RqJA TL Value 2.5 60 260 Unit C/W C

Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = 17 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G() MT2(), G() Holding Current (VD = 12 V, Gate Open, Initiating Current = 100 mA) Latching Current (VD = 12 V, IG = 42 mA) MT2(+), G(+) MT2(+), G() MT2(), G() Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G() MT2(), G() Gate NonTrigger Voltage (TJ = 125C) MT2(+), G(+) MT2(+), G() MT2(), G() DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125C, No Snubber) Critical Rate of Rise of OnState Current (TJ = 125C, f = 120 Hz, IG = 2 x IGT, tr 100 ns) Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125C) 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (dI/dt)c dI/dt dV/dt 1.5 1500 50 A/ms A/ms V/ms VTM IGT 1.55 V mA 2.0 2.0 2.0 35 35 35 45 mA mA 0.5 0.5 0.5 0.2 0.2 0.2 50 80 50 V 1.7 1.1 1.1 V TJ = 25C TJ = 125C IDRM, IRRM mA 0.005 2.0 Symbol Min Typ Max Unit

IH IL

VGT

VGD

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BTA12600CW3G, BTA12800CW3G
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +

Symbol
VDRM IDRM VRRM IRRM VTM IH

Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 IH VTM IRRM at VRRM on state IH

VTM

off state

+ Voltage IDRM at VDRM

Quadrant Definitions for a Triac

MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2

Quadrant II

() IGT GATE MT1 REF

(+) IGT GATE MT1 REF

Quadrant I

IGT () MT2 () MT2

+ IGT

Quadrant III

() IGT GATE MT1 REF

(+) IGT GATE MT1 REF MT2 NEGATIVE (Negative Half Cycle)

Quadrant IV

All polarities are referenced to MT1. With inphase signals (using standard AC lines) quadrants I and III are used.

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BTA12600CW3G, BTA12800CW3G
P(AV), AVERAGE POWER DISSIPATION (WATTS) 125 TC, CASE TEMPERATURE (C) 120, 90, 60, 30 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 IT(AV), AVERAGE ON-STATE CURRENT (A) 12 60 30 90 DC 180 120

110

95 180 80 DC 65 0 2 4 6 8 10 IT(RMS), RMS ON-STATE CURRENT (A) 12

Figure 1. RMS Current Derating

Figure 2. On-State Power Dissipation

1000

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

100 I T, INSTANTANEOUS ONSTATE CURRENT (AMP)

Typical @ TJ = 40C Typical @ TJ = 25C Typical @ TJ = 125C

0.1

0.01

0.1

10

100 t, TIME (ms)

1000

1104

Figure 4. Thermal Response

10

55 IH, HOLDING CURRENT (mA) 45 35 MT2 POSITIVE 25 15

Typical @ TJ = 125C 1 Typical @ TJ = 25C Typical @ TJ = 40C

MT2 NEGATIVE 20 35 50 65 80 95 110 125

0.1 0.5

1.5

2.5

3.5

4.5

5 40 25 10 5

VT, INSTANTANEOUS ON-STATE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (C)

Figure 3. On-State Characteristics

Figure 5. Hold Current Variation

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BTA12600CW3G, BTA12800CW3G
100 IGT, GATE TRIGGER CURRENT (mA) GATE TRIGGER VOLTAGE (V) VD = 12 V RL = 30 W 2.00 1.80 1.60 1.40 1.20 1.00 0.80 0.60 Q2 20 35 50 65 80 95 110 125 Q3 Q1 VD = 12 V RL = 30 W

10

Q2 Q3

Q1

1 40 25 10 5

20

35

50

65

80

95

110 125

0.40 40 25 10 5

TJ, JUNCTION TEMPERATURE (C)

TJ, JUNCTION TEMPERATURE (C)

Figure 6. Gate Trigger Current Variation

dv/dt , CRITICAL RATE OF RISE OF OFFSTATE VOLTAGE (V/ s)

Figure 7. Gate Trigger Voltage Variation

5k 4k 3k 2k 1k 0 LATCHING CURRENT (mA) VD = 800 Vpk TJ = 125C

120 100 80 60 Q1 40 20 Q3 VD = 12 V RL = 30 W Q2

10

100

1000

10000

RG, GATE TO MAIN TERMINAL 1 RESISTANCE (W)

0 40 25 10 5 20 35 50 65 80 TJ, TEMPERATURE (C)

95

110 125

Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential Waveform)

Figure 10. Latching Current Variation

LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I

1N4007

+ MT2 1N914 51 W G MT1

CHARGE

200 V

NONPOLAR CL

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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BTA12600CW3G, BTA12800CW3G
PACKAGE DIMENSIONS
TO220 CASE 221A07 ISSUE AA
T B F T C S
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04

Q H Z L V G

A U K

1 2 3

R J D N

STYLE 12: PIN 1. 2. 3. 4.

MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED

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BTA12600CW3/D