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Figure 1. Package
IOUT 6.0 A (*) VCC 36 V
RDS(on) 60 m (*)
CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS I ON STATE OPEN LOAD DETECTION I OFF STATE OPEN LOAD DETECTION I SHORTED LOAD PROTECTION I UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN I PROTECTION AGAINST LOSS OF GROUND I VERY LOW STAND-BY CURRENT I REVERSE BATTERY PROTECTION (**) I IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE
I I
PowerSSO-24
DESCRIPTION The VND830PEP-E is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table).
Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both in on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection.
Tube VND830PEP-E
Rev. 1 September 2004 1/13 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
VND830PEP-E
Figure 2. Block Diagram
Vcc
Vcc CLAMP
OVERVOLTAGE UNDERVOLTAGE
CLAMP 1 OUTPUT1 DRIVER 1 CLAMP 2 CURRENT LIMITER 1 LOGIC OVERTEMP. 1 OPENLOAD ON 1 CURRENT LIMITER 2 DRIVER 2 OUTPUT2
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VND830PEP-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
VCC GND NC NC INPUT1 STATUS1 NC STATUS2 NC INPUT2 NC VCC 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT2 OUTPUT2 OUTPUT2 OUTPUT2 OUTPUT2 OUTPUT2 TAB = VCC
N.C. X X
Output X
IIN1 INPUT 1 VIN1 VSTAT1 ISTAT1 STATUS 1 IIN2 INPUT 2 VIN2 ISTAT2 STATUS 2 VSTAT2 GND IGND OUTPUT 2 OUTPUT 1 VCC
Note: (*) When mounted on a standard single-sided FR-4 board with 1 cm2 of Cu (at least 35m thick) connected to all VCC pins.
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VND830PEP-E
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40C<Tj<150C unless otherwise specified) (Per each channel) Table 5. Power Outputs
Symbol VCC VUSD VOV RON Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down On State Resistance IOUT=2A; Tj=25C IOUT=2A; VCC>8V Off State; VCC=13V; VIN=VOUT=0V Off State; VCC=13V; VIN=VOUT=0V; Tj=25C On State; VCC=13V; VIN=5V; IOUT=0A IL(off1) IL(off2) IL(off3) IL(off4) Off State Output Current Off State Output Current Off State Output Current Off State Output Current VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; VCC=13V; Tj =125C VIN=VOUT=0V; VCC=13V; Tj =25C 0 -75 12 12 5 Test Conditions Min. 5.5 3 36 60 120 40 25 7 50 0 5 3 Typ. 13 4 Max. 36 5.5 Unit V V V m m A A mA A A A A
IS
Supply Current
V/s
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VND830PEP-E
ELECTRICAL CHARACTERISTICS (continued) Table 9. Logic Input
Symbol VIL IIL VIH IIH VI(hyst) VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage IIN = 1mA IIN = -1mA VIN = 3.25V 0.5 6 6.8 -0.7 8 VIN = 1.25V 1 3.25 10 Test Conditions Min. Typ. Max. 1.25 Unit V A V A V V V
Tj>TTSD
Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles.
3.5 1000
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VND830PEP-E
Figure 5.
OPEN LOAD STATUS TIMING (with external pull-up) IOUT < IOL VOUT> VOL VINn VINn
dVOUT/dt(on)
dVOUT/dt(off)
10% t VINn
td(on)
td(off)
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VND830PEP-E
Table 12. Truth Table
CONDITIONS Normal Operation INPUTn L H L H H L H L H L H L H L H OUTPUTn L H L X X L L L L L L H H L H STATUSn H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L
Current Limitation
Overtemperature Undervoltage Overvoltage Output Voltage > VOLn Output Current < IOLn
I C C C C C C
IV C C C C C E
CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
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VND830PEP-E
Figure 7. Waveforms
OVERVOLTAGE
VCC<VOV VCC>VOV
VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn OUTPUT VOLTAGEn STATUSn
VOUT>VOL
VOL
OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj INPUTn OUTPUT CURRENTn STATUSn
TTSD TR
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VND830PEP-E
Figure 8. Application Schematic
+5V +5V +5V VCC Rprot STATUS1 Dld C Rprot INPUT1 OUTPUT1 Rprot STATUS2
Rprot
INPUT2
GND
OUTPUT2
RGND VGND
DGND
NETWORK
AGAINST
Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND 600mV / (IS(on)max). 2) RGND (VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the devices datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1k) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.
C I/Os PROTECTION:
If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the C I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -VCCpeak/Ilatchup Rprot (VOHC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup 20mA; VOHC 4.5V 5k Rprot 65k. Recommended Rprot value is 10k.
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VND830PEP-E
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up resistor (RPU) connected between OUTPUT pin and a positive supply voltage (VPU) like the +5V line used to supply the microprocessor. The external resistor has to be selected according to the following requirements: 1) no false open load indication when load is connected: in this case we have to avoid VOUT to be higher than VOlmin; this results in the following condition VOUT=(VPU/(RL+RPU))RL<VOlmin. 2) no misdetection when load is disconnected: in this case the VOUT has to be higher than VOLmax; this results in the following condition RPU<(VPUVOLmax)/ IL(off2). Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pull-up resistor RPU should be connected to a supply that is switched OFF when the module is in standby. The values of VOLmin, VOLmax and IL(off2) are available in the Electrical Characteristics section.
V batt.
VPU
GROUND
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VND830PEP-E
PACKAGE MECHANICAL Table 14. PowerSSO-24 Mechanical Data
Symbol A A2 a1 b c D E e e3 G G1 H h L N X Y 3.9 6.1 0.55 10.1 millimeters Min 1.9 1.9 0 0.34 0.23 10.2 7.4 0.8 8.8 0.1 0.06 10.5 0.4 0.85 10 4.3 6.5 0.4 Typ Max 2.22 2.15 0.07 0.46 0.32 10.4 7.6
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VND830PEP-E
REVISION HISTORY Table 15. Revision History
Date Sep. 2004 Revision 1 - First issue. Description of Changes
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VND830PEP-E
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners
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