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VN771K-E

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS
Table 1. General Features
Type VN771K-E RDS(on) 95m (*) IOUT 9A (**) VCC 36V

Figure 1. Package

Note: (*) Total resistance of one side in bridge configuration. Note: (**) Typical current limitation value.

SUITED AS LOW VOLTAGE BRIDGE LINEAR CURRENT LIMITATION I VERY LOW STAND-BY POWER DISSIPATION I SHORT CIRCUIT PROTECTED I STATUS FLAG DIAGNOSTIC (OPEN DRAIN) I INTEGRATED CLAMPING CIRCUITS I UNDERVOLTAGE PROTECTION
I I I I

SO-28

ESD PROTECTION IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE The dual high side switches have built-in thermal shutdown to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature. The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPower technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin.

DESCRIPTION The VN771K-E is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPower M0-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application.

Table 2. Order Codes


Package Tube VN771K-E Tape and Reel VN771KTR-E

SO-28

Rev. 1 September 2004 1/21

VN771K-E
Figure 2. Block Diagram
Vcc

Vcc CLAMP

OVERVOLTAGE UNDERVOLTAGE

GND INPUT1 DIAG


DRIVER 1

CLAMP 1

SOURCE1
CLAMP 2 CURRENT LIMITER 1 LOGIC OVERTEMP. 1 OPENLOAD ON 1 DRIVER 2

SOURCE2
CURRENT LIMITER 2 OPENLOAD OFF 1 OPENLOAD ON 2

INPUT2

OPENLOAD OFF 2 OVERTEMP. 2

Overvoltage Clamp

DRAIN3

INPUT3

Gate Control
SOURCE3

Over Temperature

Linear Current Limiter

Overvoltage Clamp

DRAIN4

INPUT4

Gate Control
SOURCE4

Over Temperature

Linear Current Limiter

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Table 3. Pin Function
No 1, 3, 25, 28 2 4, 11 5, 10, 19, 24 6 7 8 9 12, 14, 15, 18 13 16, 17 20, 21 22, 23 26, 27 NAME DRAIN 3 INPUT 3 N.C. VCC GND INPUT 1 DIAGNOSTIC INPUT 2 DRAIN 4 INPUT 4 SOURCE 4 SOURCE 2 SOURCE 1 SOURCE 3 FUNCTION Drain of Switch 3 (low-side switch) Input of Switch 3 (low-side switch) Not Connected Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage Ground of Switches 1 and 2 (high-side switches) Input of Switch 1 (high-side switches) Diagnostic of Switches 1 and 2 (high-side switches) Input of Switch 2 (high-side switch) Drain of switch 4 (low-side switch) Input of Switch 4 (low-side switch) Source of Switch 4 (low-side switch) Source of Switch 2 (high-side switch) Source of Switch 1 (high-side switch) Source of Switch 3 (low-side switch)

Figure 3. Configuration Diagram (Top View)

Table 4. Thermal Data


Symbol Rthj-case Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case (High-side switch) Thermal Resistance Junction-case (Low-side switch) Thermal Resistance Junction-ambient MAX MAX MAX Value 20 20 60 Unit C/W C/W C/W

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ABSOLUTE MAXIMUM RATINGS Table 5. Dual High Side Switch
Symbol VCC - VCC - IGND IOUT - IOUT IIN ISTAT Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT - STATUS - OUTPUT Ptot Tj Tc Tstg - VCC Power Dissipation Tc=25C Junction Operating Temperature Case Operating Temperature Storage Temperature Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 Unit V V mA A A mA mA

4000 4000 5000 5000 6 Internally Limited - 40 to 150 - 55 to 150

V V V V W C C C

VESD

Table 6. Low Side Switch


Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5K, C=100pF) Electrostatic Discharge on output pin only (R=330, C=150pF) Total Dissipation at Tc=25C Operating Junction Temperature Case Operating Temperature Storage Temperature Value Internally Clamped Internally Clamped +/-20 10 Internally Limited -15 4000 16500 6 Internally limited Internally limited -55 to 150 Unit V V mA A A V V W C C C

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ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8V<VCC<36V; -40C< Tj <150C, unless otherwise specified) (Per each channel) Table 7. Power Outputs
Symbol VCC (1) VUSD (1) VOV (1) RON Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down On State Resistance Test Conditions Min 5.5 3 36 Typ 13 4 Max 36 5.5 60 12 12 5 0 -75 120 40 25 7 50 0 5 3 Unit V V V m m A A mA A A A A

IOUT =2A; Tj=25C IOUT =2A; VCC> 8V Off State; VCC=13V; VIN=VOUT=0V Off State; VCC=13V; Tj =25C; VIN=VOUT=0V On State; VCC=13V VIN=VOUT =0V; VCC=36V; Tj=125C VIN=0V; VOUT=3.5V VIN=VOUT =0V; Vcc=13V; Tj =125C VIN=VOUT =0V; Vcc=13V; Tj =25C

IS (1)

Supply Current

IL(off1) IL(off2) IL(off3) IL(off4)

Off Off Off Off

State State State State

Output Current Output Current Output Current Output Current

Note: (1) Per device.

Table 8. Switching (V CC=13V)


Symbol td(on) td(off) dVOUT/ dt(on) dVOUT/ dt(off) Parameter Turn-on Delay Time Turn-off Delay Time Turn-on Voltage Slope Test Conditions RL=6.5 from VIN rising edge to VOUT=1.3V RL=6.5 from VIN falling edge to VOUT=11.7V RL=6.5 from VOUT=1.3V to VOUT=10.4V RL=6.5 from VOUT=11.7V to VOUT=1.3V Min Typ 30 30 See relative diagram See relative diagram Max Unit s s V/s

Turn-off Voltage Slope

V/s

Table 9. Logic Input


Symbol VIL IIL VIH IIH VI(hyst) VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN = 1.25V VIN = 3.25V IIN = 1mA IIN = -1mA 0.5 6 6.8 -0.7 Min 1 3.25 10 8 Typ Max 1.25 Unit V A V A V V V

Table 10. Status Pin


Symbol VSTAT ILSTAT CSTAT VSCL Parameter Test Conditions Status Low Output Voltage ISTAT = 1.6 mA Status Leakage Current Normal Operation; VSTAT= 5V Status Pin Input Normal Operation; VSTAT= 5V Capacitance ISTAT = 1mA Status Clamp Voltage ISTAT = - 1mA Min Typ Max 0.5 10 100 6 6.8 -0.7 8 Unit V A pF V V

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ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) Table 11. Protections
Symbol TTSD TR Thyst tSDL Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Conditions Current limitation Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 15 20 6 Ilim 9 15 15 15 VCC-41 VCC-48 VCC-55 Max 200 Unit C C C s A A A V

Tj>TTSD

Tj=125 C
5.5V<VCC<36V IOUT =2A; L= 6mH

8.5

Vdemag

Table 12. Openload Detection


Symbol IOL tDOL(on) VOL TDOL(off) Parameter Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State Voltage Detection Threshold Openload Detection Delay at Turn Off Test Conditions VIN=5V IOUT=0A VIN=0V 1.5 2.5 Min 50 Typ 100 Max 200 200 3.5 1000 Unit mA s V s

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (-40C< Tj < 150C, unless otherwise specified) Table 13. Off
Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=7A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V A V A

Table 14. On
Symbol RDS(on) Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=7A; Tj=25C VIN=5V; ID=7A Min Typ Max 35 70 Unit m

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ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued) (Tj=25C, unless otherwise specified) Table 15. Dynamic
Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=7A VDS=13V; f=1MHz; VIN=0V Min Typ 18 400 Max Unit S pF

Table 16. Switching


Symbol td(on) tr td(off) tf td(on) tr td(off) tf (di/dt)on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDD=15V; ID=7A Vgen=5V; Rgen=RIN MIN=10 Min Typ 80 350 450 150 1.5 9.7 9 10.2 16 36.8 Max 250 1000 1350 500 4.5 30.0 25.0 30.0 Unit ns ns ns ns s s s s A/s nC

VDD=15V; ID=7A Vgen=5V; Rgen=2.2K VDD=15V; ID=7A Vgen=5V; Rgen=RIN MIN=10 VDD=12V; ID =7A; VIN=5V; Igen=2.13mA

Table 17. Source Drain Diode


Symbol VSD (*) trr Qrr IRRM Parameter Test Conditions Forward On Voltage ISD =7A; VIN=0V Reverse Recovery Time ISD=7A; di/dt=40A/s Reverse Recovery Charge VDD=30V; L=200H Reverse Recovery Current Min Typ 0.8 300 0.8 5 Max Unit V ns C A

Note: (*) Pulsed: Pulse duration = 300s, duty cycle 1.5 %

Table 18. Protections (-40C < Tj < 150C, unless otherwise specified)
Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=5V; VDS=13V VIN=5V; VDS=13V; Tj=125C VIN=5V; VDS=13V Min 12 15 45 150 135 10 400 175 Typ 18 Max 24 24 Unit A A s C C mA mJ

VIN=5V; VDS=13V; Tj=Tjsh starting Tj=25C; VDD =24V VIN= 5V; Rgen=RIN MIN=10; L=24mH

15

20

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DUAL HIGH-SIDE SWITCH Figure 4. Switching Time Waveforms
VOUTn 90% 80%

dVOUT/dt(on)

dVOUT/dt(off)

10% t VINn

td(on)

td(off)

Table 19. Truth Table


CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H H L H L H L H L H L H OUTPUT L H L X X L L L L L L H H L H STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L

Figure 5.
OPEN LOAD STATUS TIMING (with external pull-up) VOUT > VOL VINn IOUT < IOL Tj > TTSD VINn OVER TEMP STATUS TIMING

VSTAT n VSTAT n

tDOL(off) tDOL(on)

tSDL

tSDL

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Figure 6. Typical Application Diagram

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Figure 7. Waveforms

NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VCC VUSD INPUTn OUTPUT VOLTAGEn STATUSn undefined VUSDhyst

OVERVOLTAGE VCC<VOV VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn OUTPUT VOLTAGEn STATUSn VOUT >VOL VOL VCC>VOV

OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj INPUTn OUTPUT CURRENTn STATUSn TTSD TR

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Electrical Characterization For Dual High Side Switch Figure 8. Off State Output Current
IL(off1) (uA)
2.5 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150 175

Figure 11. Input Clamp Voltage


Vicl (V)
8 7.8

Off state Vcc=36V Vin=Vout=0V

Iin=1mA
7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Figure 9. High Level Input Current


Iih (uA)
5 4.5

Figure 12. Input High Level


Vih (V)
3.6 3.4 3.2

Vin=3.25V
4 3.5 3 2.5 2 1.5

3 2.8 2.6 2.4

1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 2.2 2 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Figure 10. Input Low Level


Vil (V)
2.6 2.4 2.2

Figure 13. Input Hysteresis Voltage


Vhyst (V)
1.5 1.4 1.3 1.2

2 1.8 1.6 1.4

1.1 1 0.9 0.8 0.7

1.2 1 -50 -25 0 25 50 75 100 125 150 175

0.6 0.5 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

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VN771K-E
Electrical Characterization For Dual High Side Switch (continued) Figure 14. Overvoltage Shutdown
Vov (V)
50 48 46 44 42 40 38 36 34 32 30 -50 -25 0 25 50 75 100 125 150 175

Figure 17. ILIM Vs Tcase


Ilim (A)
20 18

Vcc=13V
16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Figure 15. Turn-on Voltage Slope


dVout/dt(on) (V/ms)
800 700 600 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 150 175

Figure 18. Turn-off Voltage Slope


dVout/dt(off) (V/ms)
600 550 500 450 400 350 300 250 200 -50 -25 0 25 50 75 100 125 150 175

Vcc=13V Rl=6.5Ohm

Vcc=13V Rl=6.5Ohm

Tc (C)

Tc (C)

Figure 16. On State Resistance Vs Tcase


Ron (mOhm)
160 140 120 100

Figure 19. On State Resistance Vs VCC


Ron (mOhm)
120 110

Tc=150C

Iout=2A Vcc=8V; 13V & 36V

100 90 80 70

80 60

60 50 40

Tc=25C

Tc= - 40C

40 20

30 20 10

Iout=5A

0 -50 -25 0 25 50 75 100 125 150 175

0 5 10 15 20 25 30 35 40

Tc (C)

Vcc (V)

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Electrical Characterization For Dual High Side Switch (continued) Figure 20. Status Leakage Current
Ilstat (uA)
0.05

Figure 23. Status Low Output Voltage


Vstat (V)
0.8 0.7

0.04 0.6

Istat=1.6mA Vstat=5V

0.03

0.5 0.4

0.02

0.3 0.2

0.01 0.1 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Figure 21. Openload On State Detection Threshold


Iol (mA)
150 140 130 120 110 100 90 80 70 60 50 -50 -25 0 25 50 75 100 125 150 175

Figure 24. Openload Off State Voltage Detection Threshold


Vol (V)
5 4.5

Vcc=13V Vin=5V

Vin=0V
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Figure 22. Status Clamp Voltage


Vscl (V)
8 7.8

Istat=1mA
7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

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Electrical Characterization For Low Side Switches Figure 25. Static Drain Source On Resistance
Rds(on) (mohms)
180 160

Figure 28. Derating Curve

Vin=2.5V
140 120 100 80

Tj=-40C

Tj=25C

Tj=150C

60 40 20 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Id(A)

Figure 26. Transconductance


Gfs (S)
24 22 20 18 16 14 12
Tj=150C

Figure 29. Transfer Characteristics


Idon (A)
18

Vds=13V

Tj=-40C

Tj=25C

16
Vds=13.5V

Tj=25C

14 12 10 8
Tj=150C

Tj=-40C

10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 2 6 4 2

2.5 2.25 2.75

3 3.25

3.5 3.75

4 4.25

4.5 4.75

5 5.25

5.5

Id(A)

Vin (V)

Figure 27. Turn On Current Slope


di/dt(A/us)
20 17.5 15 12.5 10 7.5 5 2.5 0 0 250 500 750 1000 1250 1500 1750 2000 2250

Figure 30. Turn On Current Slope


di/dt(A/us)
6 5.5

Vin=5V Vdd=15V Id=7A

5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 250 500 750

Vin=3.5V Vdd=15V Id=7A

1000 1250 1500 1750 2000 2250

Rg(ohm)

Rg(ohm)

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Electrical Characterization For Low Side Switches (continued) Figure 31. Input Voltage Vs. Input Charge
Vin (V)
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45

Figure 34. Capacitance Variations


C(pF)
1000 900

Vds=12V Id=7A

800 700 600 500 400 300 200 0 5 10 15

f=1MHz Vin=0V

20

25

30

35

Qg (nC)

Vds(V)

Figure 32. Switching Time Resistive Load


t(us)
11

Figure 35. Switching Time Resistive Load


t(ns)
1750

tf
10 9 8 7 6 5 4 3 2 1 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500

Vdd=15V Id=7A Vin=5V

tr td(off)

1500

1250

Vdd=15V Id=7A Rg=10ohm

1000

750

500

td(off) tr

td(on)
250

tf td(on)
3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

Rg(ohm)

Vin(V)

Figure 33. Output Characteristics


Id (A)
18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5
Vin=5V Vin=4V

Figure 36. Step Response Current Limit


Tdlim(us)
55 52.5 50 47.5

Vin=5V Rg=10ohm

Vin=3V

45 42.5 40 37.5 35 32.5

Vin=2V

30
4.5 5 5.5 6

7.5

10

12.5

15

17.5

20

22.5

25

27.5

30

32.5

Vds (V)

Vdd(V)

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Electrical Characterization For Low Side Switches (continued) Figure 37. Source-Drain Diode Forward Characteristics
Vsd (mV)
1000

Figure 40. Static Drain-Source On Resistance Vs. Id


Rds(on) (mohms)
70

950

60

Vin=0V
900 50

Vin=5V

Tj=150C

850

40

800

30

Tj=25C

750

20
Tj=-40C

700

10

650 0 2 4 6 8 10 12 14 16 18

0 0 1 2 3 4 5 6 7 8 9 10 11 12 13

Id (A)

Id(A)

Figure 38. Static Drain-Source On resistance Vs. Input Voltage


Rds(on) (mohms)
80

Figure 41. Static Drain-Source On resistance Vs. Input Voltage


Rds(on) (mohms)
80

70
Tj=150C

70

Id=7A
60
Tj=150C

60

50
Id=12A Id=1A

50

40

Tj=25C

40

30
Tj=-40C Id=12A Id=1A Id=12A Id=1A

30
Tj=25C

20

20
Tj= - 40C

10 3 3.5 4 4.5 5 5.5 6

10 3 3.5 4 4.5 5 5.5 6 6.5

6.5

Vin(V)

Vin(V)

Figure 39. Normalized Input Threshold Voltage Vs. Temperature


Vinth (V)
2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150 175

Figure 42. Normalized On Resistance Vs. Temperature


Rds(on) (mOhm)
4 3.5

Vds=Vin Id=1mA

3 2.5 2 1.5 1 0.5 0 -50 -25

Vin=5V Id=7A

25

50

75

100

125

150

175

Tc (C)

Tc (C)

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Electrical Characterization For Low Side Switches (continued) Figure 43. Turn off drain source voltage slope
dv/dt(v/us)
300 275 250 225 200 175 150 125 100 75 50 25 0 0 250 500 750 1000 1250 1500 1750 2000 2250

Figure 45. Turn off drain source voltage slope


dv/dt(V/us)
300 275

Vin=3.5V Vdd=15V Id=7A

250 225 200 175 150 125 100 75 50 25 0 0 250 500

Vin=5V Vdd=15V Id=7A

750 1000 1250 1500 1750 2000 2250 2500

Rg(ohm)

Rg(ohm)

Figure 44. Current Limit Vs. Junction Temperature


Ilim (A)
40 35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 175

Vin=5V Vds=13V

Tc (C)

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Table 20. SO-28 Mechanical Data
Symbol A a1 b b1 C c1 D E e e3 F L S millimeters Min 0.10 0.35 0.23 0.50 45 (typ.) 17.7 10.00 1.27 16.51 7.40 0.40 8 (max.) 7.60 1.27 18.1 10.65 Typ Max 2.65 0.30 0.49 0.32

Figure 46. SO-28 Package Dimensions

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Figure 47. SO-28 Tube Shipment (No Suffix) Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
All dimensions are in mm.
A

C B

28 700 532 3.5 13.8 0.6

Figure 48. Tape And Reel Shipment (Suffix TR)

REEL DIMENSIONS

Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max)

1000 1000 330 1.5 13 20.2 16.4 60 22.4

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 12 1.5 1.5 7.5 6.5 2
End

All dimensions are in mm.


Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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REVISION HISTORY
Date Sep. 2004 Revision 1 - First Issue. Description of Changes

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com

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