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QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS
Table 1. General Features
Type VN771K-E RDS(on) 95m (*) IOUT 9A (**) VCC 36V
Figure 1. Package
Note: (*) Total resistance of one side in bridge configuration. Note: (**) Typical current limitation value.
SUITED AS LOW VOLTAGE BRIDGE LINEAR CURRENT LIMITATION I VERY LOW STAND-BY POWER DISSIPATION I SHORT CIRCUIT PROTECTED I STATUS FLAG DIAGNOSTIC (OPEN DRAIN) I INTEGRATED CLAMPING CIRCUITS I UNDERVOLTAGE PROTECTION
I I I I
SO-28
ESD PROTECTION IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE The dual high side switches have built-in thermal shutdown to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature. The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPower technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin.
DESCRIPTION The VN771K-E is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPower M0-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application.
SO-28
VN771K-E
Figure 2. Block Diagram
Vcc
Vcc CLAMP
OVERVOLTAGE UNDERVOLTAGE
CLAMP 1
SOURCE1
CLAMP 2 CURRENT LIMITER 1 LOGIC OVERTEMP. 1 OPENLOAD ON 1 DRIVER 2
SOURCE2
CURRENT LIMITER 2 OPENLOAD OFF 1 OPENLOAD ON 2
INPUT2
Overvoltage Clamp
DRAIN3
INPUT3
Gate Control
SOURCE3
Over Temperature
Overvoltage Clamp
DRAIN4
INPUT4
Gate Control
SOURCE4
Over Temperature
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VN771K-E
Table 3. Pin Function
No 1, 3, 25, 28 2 4, 11 5, 10, 19, 24 6 7 8 9 12, 14, 15, 18 13 16, 17 20, 21 22, 23 26, 27 NAME DRAIN 3 INPUT 3 N.C. VCC GND INPUT 1 DIAGNOSTIC INPUT 2 DRAIN 4 INPUT 4 SOURCE 4 SOURCE 2 SOURCE 1 SOURCE 3 FUNCTION Drain of Switch 3 (low-side switch) Input of Switch 3 (low-side switch) Not Connected Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage Ground of Switches 1 and 2 (high-side switches) Input of Switch 1 (high-side switches) Diagnostic of Switches 1 and 2 (high-side switches) Input of Switch 2 (high-side switch) Drain of switch 4 (low-side switch) Input of Switch 4 (low-side switch) Source of Switch 4 (low-side switch) Source of Switch 2 (high-side switch) Source of Switch 1 (high-side switch) Source of Switch 3 (low-side switch)
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VN771K-E
ABSOLUTE MAXIMUM RATINGS Table 5. Dual High Side Switch
Symbol VCC - VCC - IGND IOUT - IOUT IIN ISTAT Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT - STATUS - OUTPUT Ptot Tj Tc Tstg - VCC Power Dissipation Tc=25C Junction Operating Temperature Case Operating Temperature Storage Temperature Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 Unit V V mA A A mA mA
V V V V W C C C
VESD
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VN771K-E
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8V<VCC<36V; -40C< Tj <150C, unless otherwise specified) (Per each channel) Table 7. Power Outputs
Symbol VCC (1) VUSD (1) VOV (1) RON Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down On State Resistance Test Conditions Min 5.5 3 36 Typ 13 4 Max 36 5.5 60 12 12 5 0 -75 120 40 25 7 50 0 5 3 Unit V V V m m A A mA A A A A
IOUT =2A; Tj=25C IOUT =2A; VCC> 8V Off State; VCC=13V; VIN=VOUT=0V Off State; VCC=13V; Tj =25C; VIN=VOUT=0V On State; VCC=13V VIN=VOUT =0V; VCC=36V; Tj=125C VIN=0V; VOUT=3.5V VIN=VOUT =0V; Vcc=13V; Tj =125C VIN=VOUT =0V; Vcc=13V; Tj =25C
IS (1)
Supply Current
V/s
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VN771K-E
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) Table 11. Protections
Symbol TTSD TR Thyst tSDL Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Conditions Current limitation Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 15 20 6 Ilim 9 15 15 15 VCC-41 VCC-48 VCC-55 Max 200 Unit C C C s A A A V
Tj>TTSD
Tj=125 C
5.5V<VCC<36V IOUT =2A; L= 6mH
8.5
Vdemag
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (-40C< Tj < 150C, unless otherwise specified) Table 13. Off
Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=7A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V A V A
Table 14. On
Symbol RDS(on) Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=7A; Tj=25C VIN=5V; ID=7A Min Typ Max 35 70 Unit m
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VN771K-E
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued) (Tj=25C, unless otherwise specified) Table 15. Dynamic
Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=7A VDS=13V; f=1MHz; VIN=0V Min Typ 18 400 Max Unit S pF
VDD=15V; ID=7A Vgen=5V; Rgen=2.2K VDD=15V; ID=7A Vgen=5V; Rgen=RIN MIN=10 VDD=12V; ID =7A; VIN=5V; Igen=2.13mA
Table 18. Protections (-40C < Tj < 150C, unless otherwise specified)
Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=5V; VDS=13V VIN=5V; VDS=13V; Tj=125C VIN=5V; VDS=13V Min 12 15 45 150 135 10 400 175 Typ 18 Max 24 24 Unit A A s C C mA mJ
VIN=5V; VDS=13V; Tj=Tjsh starting Tj=25C; VDD =24V VIN= 5V; Rgen=RIN MIN=10; L=24mH
15
20
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VN771K-E
DUAL HIGH-SIDE SWITCH Figure 4. Switching Time Waveforms
VOUTn 90% 80%
dVOUT/dt(on)
dVOUT/dt(off)
10% t VINn
td(on)
td(off)
Figure 5.
OPEN LOAD STATUS TIMING (with external pull-up) VOUT > VOL VINn IOUT < IOL Tj > TTSD VINn OVER TEMP STATUS TIMING
VSTAT n VSTAT n
tDOL(off) tDOL(on)
tSDL
tSDL
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VN771K-E
Figure 6. Typical Application Diagram
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VN771K-E
Figure 7. Waveforms
NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VCC VUSD INPUTn OUTPUT VOLTAGEn STATUSn undefined VUSDhyst
OVERVOLTAGE VCC<VOV VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn OUTPUT VOLTAGEn STATUSn VOUT >VOL VOL VCC>VOV
OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj INPUTn OUTPUT CURRENTn STATUSn TTSD TR
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VN771K-E
Electrical Characterization For Dual High Side Switch Figure 8. Off State Output Current
IL(off1) (uA)
2.5 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150 175
Iin=1mA
7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Vin=3.25V
4 3.5 3 2.5 2 1.5
1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 2.2 2 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Tc (C)
Tc (C)
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VN771K-E
Electrical Characterization For Dual High Side Switch (continued) Figure 14. Overvoltage Shutdown
Vov (V)
50 48 46 44 42 40 38 36 34 32 30 -50 -25 0 25 50 75 100 125 150 175
Vcc=13V
16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Vcc=13V Rl=6.5Ohm
Vcc=13V Rl=6.5Ohm
Tc (C)
Tc (C)
Tc=150C
100 90 80 70
80 60
60 50 40
Tc=25C
Tc= - 40C
40 20
30 20 10
Iout=5A
0 5 10 15 20 25 30 35 40
Tc (C)
Vcc (V)
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VN771K-E
Electrical Characterization For Dual High Side Switch (continued) Figure 20. Status Leakage Current
Ilstat (uA)
0.05
0.04 0.6
Istat=1.6mA Vstat=5V
0.03
0.5 0.4
0.02
0.3 0.2
0.01 0.1 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Vcc=13V Vin=5V
Vin=0V
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Istat=1mA
7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
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VN771K-E
Electrical Characterization For Low Side Switches Figure 25. Static Drain Source On Resistance
Rds(on) (mohms)
180 160
Vin=2.5V
140 120 100 80
Tj=-40C
Tj=25C
Tj=150C
Id(A)
Vds=13V
Tj=-40C
Tj=25C
16
Vds=13.5V
Tj=25C
14 12 10 8
Tj=150C
Tj=-40C
10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 2 6 4 2
3 3.25
3.5 3.75
4 4.25
4.5 4.75
5 5.25
5.5
Id(A)
Vin (V)
Rg(ohm)
Rg(ohm)
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VN771K-E
Electrical Characterization For Low Side Switches (continued) Figure 31. Input Voltage Vs. Input Charge
Vin (V)
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45
Vds=12V Id=7A
f=1MHz Vin=0V
20
25
30
35
Qg (nC)
Vds(V)
tf
10 9 8 7 6 5 4 3 2 1 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500
tr td(off)
1500
1250
1000
750
500
td(off) tr
td(on)
250
tf td(on)
3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Rg(ohm)
Vin(V)
Vin=5V Rg=10ohm
Vin=3V
Vin=2V
30
4.5 5 5.5 6
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
32.5
Vds (V)
Vdd(V)
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VN771K-E
Electrical Characterization For Low Side Switches (continued) Figure 37. Source-Drain Diode Forward Characteristics
Vsd (mV)
1000
950
60
Vin=0V
900 50
Vin=5V
Tj=150C
850
40
800
30
Tj=25C
750
20
Tj=-40C
700
10
650 0 2 4 6 8 10 12 14 16 18
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13
Id (A)
Id(A)
70
Tj=150C
70
Id=7A
60
Tj=150C
60
50
Id=12A Id=1A
50
40
Tj=25C
40
30
Tj=-40C Id=12A Id=1A Id=12A Id=1A
30
Tj=25C
20
20
Tj= - 40C
6.5
Vin(V)
Vin(V)
Vds=Vin Id=1mA
Vin=5V Id=7A
25
50
75
100
125
150
175
Tc (C)
Tc (C)
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VN771K-E
Electrical Characterization For Low Side Switches (continued) Figure 43. Turn off drain source voltage slope
dv/dt(v/us)
300 275 250 225 200 175 150 125 100 75 50 25 0 0 250 500 750 1000 1250 1500 1750 2000 2250
Rg(ohm)
Rg(ohm)
Vin=5V Vds=13V
Tc (C)
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VN771K-E
Table 20. SO-28 Mechanical Data
Symbol A a1 b b1 C c1 D E e e3 F L S millimeters Min 0.10 0.35 0.23 0.50 45 (typ.) 17.7 10.00 1.27 16.51 7.40 0.40 8 (max.) 7.60 1.27 18.1 10.65 Typ Max 2.65 0.30 0.49 0.32
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VN771K-E
Figure 47. SO-28 Tube Shipment (No Suffix) Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
All dimensions are in mm.
A
C B
REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max)
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 12 1.5 1.5 7.5 6.5 2
End
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VN771K-E
REVISION HISTORY
Date Sep. 2004 Revision 1 - First Issue. Description of Changes
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VN771K-E
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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