Y38KKE

FAST TURN-OFF THYRISTOR

Features
Interdigitated amplifying gates Fast turn-on and high di/dt Low switching losses Inductive heating Electronic welders Self-commutated inverters

Typical Applications

IT(AV) VDRM/VRRM tq ITSM I2t

820A 800~1800V 18~50s 9.0kA 405 103A2S

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(C) Min

VALUE UNIT Type Max 820

TC=55C IT(AV) Mean on-state current 180 half sine wave 50Hz Double side cooled, TC=85C old model VDRM VRRM IDRM IRRM ITSM I2t VTO rT VTM dv/dt di/dt Repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak current Surge on-state current I2T for fusing coordination Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current ITM=1400A, F=15kN VDM=0.67VDRM VDM= 67%VDRM to 1000A, Gate pulse tr 0.5s IGM=1.5A ITM=1000A,tp=2000s, di/dt=-60A/s,VR=50V ITM=800A,tp=1000s, VR =50V dv/dt=30V/s ,di/dt=-20A/s VA=12V, IA=1A VDRM&VRRM , tp=10ms VDSM&VRSM= VDRM&VRRM+100V VD= VDRM VR= VRRM 10ms half sine wave VR=0.6VRRM 125

550 500

125

800

1800

125 125

40 9.0 405 1.36 0.53 2.10 500 1200

mA kA A2s*103 V m V V/s A/s

125 125 125 125

Qrr tq IGT VGT IH VGD Rth(j-c) Rth(c-h) Fm Tstg Wt Outline

Recovery charge Circuit commutated turn-off time Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heat sink Mounting force Stored temperature Weight

125 125 18 40 25 0.9 20

460 50 250 2.5 400

C s mA V mA V 0.035 C /W 0.008

VDM=67%VDRM At 1800 sine, double side cooled Clamping force 15kN

125

0.3

10 -40 250 KT33cT

20 140

kN C g

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Y38KKE
Y38KKE Peak On-state Voltage Vs.Peak On-state Current 5.5 Instantaneous on-state voltage,volts 5 4.5 4 3.5 3 2.5 2 1.5 1 100 1000 10000 Instantaneous on-state current,amperes TJ =125C Transient thermal impedance,C/W 0.04 Max . junction To Case Thermai Impedance Vs.Time 0.035

0.03

0.02

0.01

0 0.001

0.01

0.1 1 Time,seconds

10

Fig.1
9 Surge Current Vs.Cycles

Fig.2
I2t 405-Vs.Time 9
450 400

10 Total peak half-sine surge current,kA 9 8 7 6 5 4 3 2 1 10 Cycles at 50Hz 100 Maximum I 2t(Kamps2,secs)

350 300 250 200 150 100 1 10

Time,m.seconds

Fig.3
Gate characteristic at 25C junction temperature 18 16 Gate voltageVGT ,V 14 12 10 8 6 4 2 0 0 4 8 12 Gate curren,IGT ,A 16 20 P G 2W min max Gate voltage,VGT V PGM=100W (100s spulse) 4 3.5

Fig.4
Gate Trigger Zone at varies temperature 2.5V,250MA
-30C -10C

3
25 C

2.5 2 1.5 1 0.5 0 0 100 200 300 Gate curren,IGT mA 400 500
125C

Fig.5

Fig.6

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Y38KKE
Outline:

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260.5

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