NTE2996 MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: D Ultra Low On-Resistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 10V) TC = +25C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4W/C Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulsed Avalanche Energy (IAS = 50A, L = 260H, Note 3), EAS . . . . . . . . . . . . . . . . . . 320mJ Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300C Maximum Thermal Resistance: Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75C/W Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, Case-to-Sink (Flat, greased surface), RthCS . . . . . . . . . . . . 0.50C/W Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. This is a calculated value limited to TJ = +175C. Note 4. ISD 50A, di/dt 230A/s, VDD V(BR)DSS, TJ +175C.

Electrical Characteristics: (TJ = +25C unless otherwise specified)

Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source ON Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Symbol BVDSS Test Conditions VGS = 0V, ID = 250A Min 60 Typ 0.064 12 78 48 53 4.5 7.5 3210 690 140 Max Unit V

V(BR)DSS/ Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VSD trr Qrr ton (Body Diode) Note 6 (Body Diode) Note 2 TJ = +25C, IS = 50A, VGS = 0V, Note 5 TJ = +25C, IF = 50A, di/dt = 100A/s, Note 5 Between lead, 6mm (0.25) from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz VDD = 30V, ID = 50A, RG = 3.6, VGS = 10V, Note 5 VGS = 10V, ID = 50A, Note 5 VDS = VGS, ID = 250A VDS = 25V, ID = 50A, Note 5 VDS = 60V, VGS = 0 VDS = 48V, VGS = 0V, TC = +150C VGS = 20V VGS = -20V VGS = 10V, ID = 50A, VDS = 48V

2.0 69 -

12 4.0 25 250 100 -100 130 28 44 -

V/C
m V mhos A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF

Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Total Gate Charge Gate-Source Charge Gate-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time 73 220 84 330 1.3 110 330 A A V ns C

Intrinsic turn-on time is neglegible (turn-on is dominated by LS + LD)

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 5. Pulse Width 400s, Duty Cycle 2%. Note 6. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.

.420 (10.67) Max

.110 (2.79)

.147 (3.75) Dia Max

.500 (12.7) Max

.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max

Gate .100 (2.54)

Source Drain/Tab