PD-94684 RevD

Integrated Power Hybrid IC for Appliance Motor Drive Applications.

Description

IRAMX16UP60A Series 16A, 600V

International Rectifier's IRAMX16UP60A is an Integrated Power Module developed and optimized for electronic motor control in appliance applications such as washing machines and variable speed compressor drives for in-room air-conditioning systems and commercial refrigerators. Plug N Drive technology offers an extremely compact, high performance AC motor-driver in a single isolated package for a very simple design. An open emitter configuration of the low side IGBT switches offer easy current feedback and overcurrent monitor for high precision and reliable control. A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. The integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction advantages.

Features
Integrated Gate Drivers and Bootstrap Diodes. Temperature Monitor Temperature and Overcurrent shutdown Fully Isolated Package. Low VCE (on) Non Punch Through IGBT Technology. Undervoltage lockout for all channels Matched propagation delay for all channels Low side IGBT emitter pins for current control Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.75~2kW / 85~253 Vac Isolation 2000VRMS min

Absolute Maximum Ratings

Parameter VCES / VRRM V+ IO @ TC=25C IO @ TC=100C IO FPWM PD VISO TJ (IGBT & Diodes) TJ (Driver IC) T Description IGBT/Diode Blocking Voltage Positive Bus Input Voltage RMS Phase Current (Note 1) RMS Phase Current (Note 1) Pulsed RMS Phase Current (Note 2) PWM Carrier Frequency Power dissipation per IGBT @ TC =25C Isolation Voltage (1min) Operating Junction temperature Range Operating Junction temperature Range Mounting torque Range (M3 screw) Value 600 450 16 8 30 20 31 2000 -40 to +150 -40 to +150 0.5 to 1.0 kHz W VRMS C Nm A Units V

Note 1: Sinusoidal Modulation at V+=400V, TJ=150C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25C; FPWM=16kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"

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IRAMX16UP60A
Internal Electrical Schematic - IRAMX16UP60A
V+ (10)

VRU (12) VRV (13) VRW (14)

Rg1

Rg3

Rg5

VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2)

23 VS1

22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3

Rg2
LO1 16

R3 HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) T/ITRIP (21) RT THERMISTOR

24 HO1 25 VB1 1 VCC 2 HIN1 3 HIN2 4 HIN3 5 LIN1 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LO2 15

Rg4 Driver IC Rg6

LO3 14

R1 R2

C VCC (22) VSS (23)

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IRAMX16UP60A
Absolute Maximum Ratings (Continued)
All voltages are absolute referenced to COM Symbol IBDF PBR Peak VS1,2,3 VB1,2,3 VCC Parameter Bootstrap Diode Peak Forward Current Bootstrap Resistor Peak Power (Single Pulse) High side floating supply offset voltage High side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, EN Min ----VB1,2,3 - 25 -0.3 -0.3 Max 4.5 25.0 VB1,2,3 +0.3 600 20 Lower of (VSS+15V) or VCC+0.3V Units Conditions A W V V V tP= 10ms, TJ = 150C, TC=100C tP=100s, TC =100C ESR / ERJ series

VIN, VEN

-0.3

Inverter Section Electrical Characteristics @TJ= 25C

Symbol V(BR)CES V(BR)CES / T VCE(ON) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode Forward Voltage Drop Bootstrap Diode Forward Voltage Drop Bootstrap Resistor Value Bootstrap Resistor Tolerance Min 600 --------------VBDFM RBR RBR/RBR -------Typ --0.3 1.55 1.80 5 165 2.0 1.4 ---22 --Max ----1.85 2.10 80 --2.4 1.9 1.25 1.10 --5 % V V A Units Conditions V V/C V VIN=5V, IC=250A VIN=5V, IC=1.0mA (25C - 150C) IC=8A, VCC=15V IC=8A, VCC=15V, TJ=150C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150C IC=8A IC=8A, TJ=150C IF=1A IF=1A, TJ=125C TJ=25C TJ=25C

ICES

VFM

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IRAMX16UP60A
Inverter Section Switching Characteristics @ TJ= 25C
Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG RBSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-on Switching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge Min ----------------------Typ 315 150 465 30 70 500 270 770 60 120 56 FULL SQUARE Max 435 180 615 60 90 700 335 1035 100 150 84 ns nC
+

Units Conditions IC=8A, V+=400V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 IC=8A, V+=400V VCC=15V, L=2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 IC=15A, V =400V, VGE=15V TJ=150C, IC=8A, VP=600V V+= 450V VCC=+15V to 0V TJ=150C, VP=600V, V+= 360V, VCC=+15V to 0V V+= 360V, VGE=15V VCC=+15V to 0V

ns

Reverse Bias Safe Operating Area

See CT3

SCSOA

Short Circuit Safe Operating Area

10

---

---

See CT2

TJ=150C, VP=600V, tSC<10s ICSC Short Circuit Collector Current --140 --A See CT2

Recommended Operating Conditions Driver Function

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommende conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol VB1,2,3 VS1,2,3 VCC VT/ITRIP VIN Definition High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage T/ITRIP input voltage Logic input voltage LIN, HIN Min VS+12 Note 4 12 VSS VSS Max VS+20 450 20 VSS+5 VSS+5 V V Units V

Note 3: For more details, see IR21365 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details)

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IRAMX16UP60A
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) Symbol VIH VIL VCCUV+, VBSUV+ VCCUV-, VBSUVVCCUVH, VBSUVH VIN, Clamp IQBS IQCC ILK IIN+ IINT/ITRIP+ T/ITRIPV(T/ITRIP) V(T/ITRIP,HYS) Definition Logic "0" input voltage Logic "1" input voltage VCC and VBS supply undervoltage Positive going threshold VCC and VBS supply undervoltage Negative going threshold VCC and VBS supply undervoltage lock-out hysteresis Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10A Quiescent VBS supply current VIN=0V Quiescent VCC supply current VIN=0V Offset Supply Leakage Current Input bias current VIN=5V Input bias current VIN=0V T/ITRIP bias current VITRIP=5V T/ITRIP bias current VITRIP=0V T/ITRIP threshold Voltage T/ITRIP Input Hysteresis Min 3.0 --10.6 10.4 --4.9 --------------3.85 --Typ ----11.1 10.9 0.2 5.2 ------200 100 30 0 4.30 0.07 Max --0.8 11.6 11.4 --5.5 165 3.35 60 300 220 100 1 4.75 --Units V V V V V V A mA A A A A A V V

Dynamic Electrical Characteristics

Driver only timing unless otherwise specified. Symbol TON TOFF TFLIN TBLT-Trip DT MT TITrip TFLT-CLR Parameter Input to Output propagation turnon delay time (see fig.11) Input to Output propagation turnoff delay time (see fig. 11) Input Filter time (HIN, LIN) ITRIP Blancking Time Dead Time (VBS=VDD=15V) Matching Propagation Delay Time (On & Off) ITrip to six switch to turn-off propagation delay (see fig. 2) Post ITrip to six switch to turn-off clear time (see fig. 2) Min ----100 100 220 --------Typ 590 660 200 150 290 40 --7.7 6.7 360 75 1.75 ----Max ------Units Conditions ns ns ns ns ns ns s ms VCC=VBS= 15V, IC=8A, V+=400V VIN=0 & VIN=5V VIN=0 & VIN=5V VBS=VCC=15V VCC= VBS= 15V, external dead time> 400ns VCC=VBS= 15V, IC=8A, V+=400V TC = 25C TC = 100C

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IRAMX16UP60A
Thermal and Mechanical Characteristics
Symbol Rth(J-C) Rth(J-C) Rth(C-S) CD Parameter Thermal resistance, per IGBT Thermal resistance, per Diode Thermal resistance, C-S Creepage Distance Min ------3.2 Typ 3.5 5.0 0.1 --Max 4.0 5.5 ----Units Conditions Flat, greased surface. Heatsink C/W compound thermal conductivity 1W/mK mm See outline Drawings

Internal NTC - Thermistor Characteristics

Parameter R25 R125 B Definition Resistance Resistance B-constant (25-50C) Min 97 2.25 4165 -40 1 Typ 100 2.52 4250 Max 103 2.80 4335 125 Units Conditions k k k C mW/C TC = 25C TC = 25C TC = 125C R2 = R1e [B(1/T2 - 1/T1)]

Temperature Range Typ. Dissipation constant

Input-Output Logic Level Table

V+

Hin1,2,3 (15,16,17)
IC Driver

Ho U,V,W (8,5,2) Lo

FLT- EN 1 1 1 1 0

ITRIP 0 0 0 1 X

HIN1,2,3 LIN1,2,3 0 1 1 X X 1 0 1 X X

U,V,W V 0 Off Off Off

+

Lin1,2,3 (18,19,20)

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IRAMX16UP60A
HIN1,2,3

LIN1,2,3

T/ITRIP

U,V,W

HIN1,2,3

LIN1,2,3

50%

50%

T/ITRIP

U,V,W

50%

50%

TT/ITRIP

TFLT-CLR

Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load.

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IRAMX16UP60A
Module Pin-Out Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Name VB3 U, VS3 NA VB2 V,VS2 NA VB1 W,VS1 NA V
+

Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage none Positive Bus Input Voltage none Low Side Emitter Connection - Phase 1 Low Side Emitter Connection - Phase 2 Low Side Emitter Connection - Phase 3 Logic Input High Side Gate Driver - Phase 1 Logic Input High Side Gate Driver - Phase 2 Logic Input High Side Gate Driver - Phase 3 Logic Input Low Side Gate Driver - Phase 1 Logic Input Low Side Gate Driver - Phase 2 Logic Input Low Side Gate Driver - Phase 3 Temperature Monitor and Shut-down Pin +15V Main Supply Negative Main Supply

NA LE1 LE2 LE3 HIN1 HNI2 HIN3 LIN1 LIN2 LIN3 T/ITRIP VCC VSS

23

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IRAMX16UP60A
Typical Application Connection IRAMX16UP60A

BOOT-STRAP CAPACITORS U

Cb

VB3 V S3 VB2

3-Phase AC MOTOR CURRENT SENSING CAN USE A SINGLE SENSE RESISTOR OR PHASE LEG SENSING AS SHOWN

V S3 V VB1 V S1 W V+

IRAMX16UP60A

DC BUS CAPACITORS PHASE LEG CURRENT SENSE

PGND

LE1 LE2 LE3 H IN1 H IN2 H IN3 L IN1 L IN2 L IN3

035-Z2L03

CONTROLLER

ITRIP Vcc (15 V) V SS 5k 1mF 6.8K 10mF

TEMP SENSE
O/C SENSE (ACTIVE LOW) 3.3 V

10.2k 0.1mF

23

O/C SENSE (ACTIVE LOW)

DGND

1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation.

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IRAMX16UP60A
Maximum Output Phase RMS Current - A
14 12 10 8 6

TC = 100C
4 2 0 0 2 4 6 8 10 12 14 16 18 20

TC = 110C TC = 120C TJ = 150C Sinusoidal Modulation

PWM Frequency - kHz

Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency V+=400V , TJ=150C, Modulation Depth=0.8, PF=0.6
Maximum Output Phase RMS Current - A
10

TJ = 150C
8

Sinusoidal Modulation

FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz

0 1 10 100

Modulation Frequency - Hz

Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency V+=400V, TJ=150C, TC=100C, Modulation Depth=0.8, PF=0.6

10

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IRAMX16UP60A
150

Total Power Losses - W

125

TJ = 150C Sinusoidal Modulation

100

75

50

FPWM = 12 kHz FPWM = 16 kHz FPWM = 20 kHz

25

0 0 1 2 3 4 5 6 7 8 9 10 11 12

Output Phase Current - ARMS

Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation V+=400V , TJ=150C, Modulation Depth=0.8, PF=0.6
150

Total Power Losses - W

125

TJ = 150C Sinusoidal Modulation

100

75

50

FPWM = 12 kHz FPWM = 16 kHz FPWM = 20 kHz

25

0 0 1 2 3 4 5 6 7 8 9 10 11 12

Output Phase Current - ARMS

Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation VBUS=400V , TJ=150C, Modulation Depth=0.8, PF=0.6

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IRAMX16UP60A
Maximum Allowable Case Temperature -C
160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14

FPWM = 12 kHz FPWM = 16 kHz TJ = 150C Sinusoidal Modulation FPWM = 20 kHz

Output Phase Current - ARMS

Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase

200 180 IGBT Junction Temperature 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Thermistor Temperature [C] 120 140

Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature

12

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IRAMX16UP60A
5.5 5.0 Thermistor Pin Read-Out Voltag 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Thermistor Temperature - C
TT H ERM C -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 RT H ERM 4397119 3088599 2197225 1581881 1151037 846579 628988 471632 357012 272500 209710 162651 127080 TT H ERM C 25 30 35 40 45 50 55 60 65 70 75 80 85 RT H ERM 100000 79222 63167 50677 40904 33195 27091 22224 18322 15184 12635 10566 8873 TT H ERM C 90 95 100 105 110 115 120 125 RT H ERM 7481 6337 5384 4594 3934 3380 2916 2522

Min Avg Max

RTHERM 12k VTHERM 6.8k

Figure 9. Thermistor Readout vs. Temperature (6.8kohm, 1% pull down resistor) and Nominal Thermistor Resistance values vs. Temperature Table.
16.0 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0 5 10 15 20
4.7F 3.3F 6.8F 10F
+15V HIN LIN RBS

Recommended Bootstrap Capacitor - F

15F
DBS vB VCC HIN LIN VSS COM VSS HO VS LO U,V,W RG2 CBS RG1 V+

GND

PWM Frequency - kHz

Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency

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IRAMX16UP60A
Figure 11. Switching Parameter Definitions

VCE
50% HIN /LIN

IC

IC
90% IC

VCE HIN /LIN

90% IC

50% VCE

HIN /LIN

50% HIN /LIN 50% VCE

10% IC

10% IC

tr TON
Figure 11a. Input to Output Propagation turn-on Delay Time

tf TOFF
Figure 11b. Input to Output Propagation turn-off Delay Time

IF VCE

HIN/LIN

Irr trr
Figure 11c. Diode Reverse Recovery

14

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IRAMX16UP60A
V+ 5V
Ho

IN
Hin1,2,3
IC Driver Lo

U,V,W

IO

Lin1,2,3

Figure CT1. Switching Loss Circuit

V+

Hin1,2,3 1k VCC 5VZD IN 10k Lin1,2,3

Ho

IN
U,V,W

IC Driver Lo

IO
Io

Figure CT2. S.C.SOA Circuit

V+

Hin1,2,3 1k VCC 5VZD 10k

IC Driver

Ho

IN
U,V,W

Lin1,2,3 IN

Lo

IO
Io

Figure CT3. R.B.SOA Circuit

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IRAMX16UP60A
Package Outline IRAMX16UP60A
note 2

note 3

035-Z2L03

IRAMX16UP60A

note 1

Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.15mm typical 5- Tollerances 0.5mm, unless otherwise stated

For mounting instruction see AN-1049

16

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IRAMX16UP60A
Package Outline IRAMX16UP60A-2
note 2

note 3

035-Z2L03

IRAMX16UP60A

note 1

Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.15mm typical 5- Tollerances 0.5mm, unless otherwise stated

For mounting instruction see AN-1049

Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 07/05

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