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Robert A. Bartynski
Department of Physics and Astronomy Laboratory for Surface Modification and NanoPhysics Lab Rutgers University Piscataway, NJ 08854
NPL 203 bart@physics.rutgers.edu 732-445-5500 x4839
RUTGERS
THE STATE UNIVERSITY OF NEW JERSEY
NanoPhysics Laboratory
M.F. Crommie, C.P. Lutz, D.M. Eigler. Science 262, 218-220 (1993)
Surface Review and Letters 2 (1), 127-137 (1995) Physics Today 46 (11), 17-19 (1993).
...
Y(z)
...
y(z) y(z) y( x ) y( x )
2-d structure
confinement in 1-d
1-d structure
confinement in 2-d
confinement in 3-d
0-d structure
Electron density acquires nodal structure along confinement direction. Energy spectrum acquires discrete character.
Photoelectron Spectroscopy
KE KE
hu1
EV VB EF
Intensity
Intensity
CLB
CLS
e-
e-
eeEV EF
EF
Einitial
Electron Counts
EV EF Photon Counts EF
Efinal
ee-
k|| = (2mE/h2)1/2sinq
kout
k||-in q
k||-out
Map E(k||)
For 2d system obtain all information about energy bands
kin
Surface
ko
Crystal
Vacuum
Cu(100) f ccFe
Fe
Cu
Cu Surf. 215ML
200 x 200 nm
200 x 200 nm
300 x 300 nm
Cu(100)
Fe/Cu(100)
Cu/Fe/Cu(100)
E(k||)= En + h2k||2/2m
For square well: En = n2h2/8mL2
k_parallel
k_perpendicular
k_perpendicular
19 ML
10 ML
Thickness (ML)
Cu
Fe
0 1 2 3
3 ML
4
Cu
Fe
All spectra here obtained at k|| = 0 MQW states disperse up with increasing Cu overlayer thickness!
Since E = n2h2/8mL2 down when you increase the width of the well?
n+1 n+1 n d d+D
u -1
u
u +1
ma
(m + 1)a
e-
Vin Fe
Vin Cu
Fe
Cu
Bohr-Summerfeld Approx.
(Phase Accumulation Model)
Phase/2p
10
15
20
u=m-n
n nodes
4 3 2 1 0 m+1 ML m ML
8 6 4 2 0 -2 -4
(n+1) nodes Add a layer, add a node (MQW states are characterized by the quantum number u = m - n)
k^
p/a
kp a
T.C. Chiang
n+1
n+1 n
T.C. Chiang
12 ML Cu
-0.2
-0.4
-0.6
-0.8
Cu Thickness (ML)
10 20 30 Cu Thickness (ML)
10
20
30
40 40
Cu Ni
2 ML Cu
Cu
0 2 4 6 Energy Above EF (eV) Similar to Cu/Ni(100) [Himpsel and Rader, APL 67, 1151 (1995)]
Ni
Fe
EF
d bands
d bands d bands
Ni 4sp Cu 4sp
Cu 4sp Fe 3d
T.C. Chiang
k_parallel
k||
Energy (eV)
Pb/Si(111)
Expt.
Weitering et al.
Theory
Theory
Chemisorption on MQWs
5 ML O O O O C C C C
Cu(100) f ccFe
Cu
215ML
Quantization of Cu sp band results in MQW states Cu sp electrons play a role in CO chemisorption (A. Nilsson et al.) Changing Cu thickness modifies electronic levels without changing geometric structure Corresponding modification in CO chemisorption?
Mass Spec
TP(th)
TPD of CO/Cu(100)
150
300
13.75 10
q Cu
15 ML
10 ML
5 ML
2.5 ML 120 160 200 240
Temperature (K)
170
F
Cu(100)
168 166
CO/Cu/fccCo
172
CO/Cu/fccFe
Cu(100)
Td (K)
Td (K)
Td
IPE Intensity at E F
164 162
165 160
IPE Intensity at EF 20 30
CaF/Si as mask
Si(557) - Au
(Himpsel et al.)
EF
E_F Energy
kx
1D
k_y k_x
ky
Sprunger, Kurtz
Self-assembly Ag/Cu(110)
Y(x) = Scnsin(npx/L)
Competing periodicities in fractionally filled one-dimensional bands, P.C. Snijders, S. Rogge, H.H. Weitering Physical Review Letters (February 24, 2006)
Summary
2-d structures show discrete electronic structure ^ to plane of the film, but band-like structure parallel to plane. Square well model NOT sufficient, must take into account 1-d structures can be fabricated and photoemission shows that
for 2-d and 1-d structures, respectively.
electronic structure of overlayer AND substrate to fully describe. metallic behavior is possible (undoubtedly owing to interaction with substrate).
Can use STS to map electronic states of small (i.e. several atom long) 1-d structures to reveal dispersion with length.