UNISONIC TECHNOLOGIES CO.

, LTD UF3055
Preliminary Power MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

As an N-channel enhancement mode power MOSFET, the UTC UF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

FEATURES SYMBOL

* RDS(ON)<110 m @VGS=10V

ORDERING INFORMATION
Ordering Number Lead Free Plating Halogen Free UF3055L-TN3-R UF3055G-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel

www.unisonic.com.tw Copyright 2010 Unisonic Technologies Co., Ltd

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UF3055

Preliminary
(TC =25C, unless otherwise noted)

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage VDSS 60 V Drain Gate Voltage (RGS = 10M ) VDGR 60 V Continuous 20 V Gate Source Voltage VGSS Non-Repetitive (tP 10 ms) 30 V Continuous Drain Current (Ta = 25C) ID 3.0 A Pulsed Drain Current (tP 10 s) IDM 9.0 A Single Pulsed Avalanche Energy (Note 2) EAS 74 mJ Power Dissipation (Ta = 25C) PD 2 W Junction Temperature TJ 175 C Strong Temperature TSTG -55 ~ +175 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ = 25C ,VDD = 25V, VGS = 10V, IL = 7.0A, L = 3.0mH, VDS = 60V

THERMAL DATA

PARAMETER Junction to Ambient (Note)

SYMBOL RATINGS JA 62.5 ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise noted) TYP 68 66 MAX

UNIT C/W UNIT

PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain Source Breakdown Voltage (Note 1) VGS= 0V, ID =250A 60 BVDSS Temperature Coefficient (Positive) Drain-Source Leakage Current IDSS VGS=0V, VDS=60V Gate-Source Leakage Current IGSS VGS = 20 V, VDS =0V ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS=VDS, ID =250A 2.0 VGS(TH) Temperature Coefficient (Negative) Static Drain-Source On-State Resistance RDS(ON) VGS =10 V, ID =1.5A Static Drain-to-Source On-Resistance VDS(ON) VGS =10 V, ID =3A Forward Tran conductance gFS VDS=8.0V, ID=1.7A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS =0 V, VDS =25 V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDD=30V, ID =3.0A , Turn-OFF Delay Time tD(OFF) RG =9.1 (Note 1) Turn-OFF Fall-Time tF Total Gate Charge QG VGS =10V, VDS =48V, ID =3.0A Gate-Source Charge QGS (Note 1) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V, IS=3.0A tRR Body Diode Reverse Recovery Time tA VGS=0V, IS=3.0A, dI/dt=100 A/s (Note 1) tB Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. Switching characteristics are independent of operating junction temperatures.

V mV/C 1.0 A 100 nA V mV/C 110 m 0.40 V M 455 50 155 20 30 45 30 22 pF pF pF ns ns ns ns nC nC nC V ns ns ns nC 4.0

3.0 6.6 88 0.27 3.2 324 35 110 9.4 14 21 13 10.6 1.9 4.2 0.89 30 22 8.6 0.04

1.0

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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UF3055

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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