KSC1815

KSC1815
Audio Frequency Amplifier & High Frequency OSC
Complement to KSA1015 Collector-Base Voltage : VCBO= 50V

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 50 400 125 -55 ~ 150 Units V V V mA mA mW C C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob NF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA VCE=6V, IC=150mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA RS=10k, f=1Hz 80 2.0 1.0 3.0 1.0 70 25 0.1 Min. Typ. Max. 0.1 0.1 700 0.25 1.0 V V MHz pF dB Units A A

hFE Classification
Classification hFE1 O 70 ~ 140 Y 120 ~ 240 GR 200 ~ 400 L 350 ~ 700

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

KSC1815

Typical Characteristics

100

100

IB = 400A
80

VCE=6V

IB = 300A
60

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

IB = 350A

IB = 250A IB = 200A

10

40

IB = 150A IB = 100A

20

IB = 50A
0 0 4 8 12 16 20

0.1 0.0

0.2

0.4

0.6

0.8

1.0

1.2

VCE[V], COLLECTOR-EMITTER VOLTAGE

VBE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. Transfer Characteristic

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000

VCE = 6V

IC=10IB

hFE, DC CURRENT GAIN

VBE(sat)
1000

1000

100

VCE(sat)

10 1 10 100 1000

10 1 10 100 1000

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

100

1000

IE=0

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

f=1MHz

VCE =6V

Cob[pF], CAPACITANCE

100

10

10

10

100

1000

1 0.1

10

100

VCB[V], COLLECTOR-BASE VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 5. Output Capacitance

Figure 6. Current Gain Bandwidth Product

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

KSC1815

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1