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2010 Fairchild Semiconductor Corporation 1 RD344_FNA41560 Rev. 0.0.1
Ref er enc e Desi gn RD-344
Fai r c hi l d Mot i on-SPM

FNA41560 Thr ee-Shunt Desi gn


The following reference design supports a design of FNA41560. It should be used in conjunction with
the FNA41560 datasheet as well as Fairchilds application notes (AN-9070, AN-9071, AN-9072) and
technical support team. Please visit Fairchilds website at http://www.fairchildsemi.com.
Application Fairchild Device
Input Voltage
Range
Typical Power
Rating
Topology
Home Appliance
(Air-Conditioner)
FNA41560
MMSZ5252B
LMV324
300~400VDC 1500W
Three Shunt Solution
(Single Ground)

Key Feat ur es

FNA41560
600V-15A 3-phase IGBT inverter bridge including control ICs for gate driving and protection
Easy PCB layout due to built-in bootstrap diode and independent VS pin
Divided negative DC-link terminals for inverter current-sensing applications
Single-grounded power supply due to built-in HVIC
Built-in NTC thermistor for over-temperature monitoring
Isolation rating of 2000V
rms
/min.

MMSZ5252B
Silicon planar power Zener diodes, DO-41 glass case
24V/1.0W rating Zener diode
For use in stabilizing and clipping circuits with high power rating
Standard Zener voltage tolerance: 5%

LMV324
General-purpose, low-voltage, rail-to-rail output amplifier
80A supply current per channel
1.2MHz GBP(Gain Bandwidth Product)
1.5V/s slew rate
Low offset voltage
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2010 Fairchild Semiconductor Corporation 2 RD344_FNA41560 Rev. 0.0.1
1. Sc hemat i c s

Figure 1. Block Diagram of Air Conditioner
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2010 Fairchild Semiconductor Corporation 3 RD344_FNA41560 Rev. 0.0.1

R31 100
R21 100
C5
10uF/35V
C6
104
C7
10uF/35V
C8
10uF/35V
C26
220uF/35V
C24
102
R17 100
R20 100
C14
0.1uF 630V
R28
0.008 2W
5V line
R31
4.7K
C25
102
C17
102
C16
102
C15
102
R16 100
R18 100
R19 100
5V line
15V line
(1) UH
P
N
W
V
U
15V line
C32
104
C31
100uF/16V
C28
333
R35 62
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
CSC
OUT(WL)
OUT(VL)
OUT(UL)
NW (9)
NV (8)
NU (7)
W(6)
V (5)
U (4)
P (3)
(23) VS(V)
(26) VB(U)
(19) IN(VH)
(22) VB(W)
(10) CSC
(11) VFO
(14) IN(UL)
(13) IN(VL)
(12) IN(WL)
(15) COM
UVS
UVB
OUT(UH)
UVS
WVS
OUT(WH)
COM
VCC
OUT(VH)
IN(UH) VVS
IN(VH)
(25) VS(U)
(24) VB(V)
(21) VS(W)
(20) IN(UH)
(18) V(WH)
(17) VCC(H)
VTH (1)
RTH (2)
VVS
VVB
WVS
WVB
IN(WH)
(16) VCC(L)
ZD1
MMSZ5252B
C20
102
C19
102
C18
102
R9 6.8K 1%
5V line
Motion-SPM FNA41560
J 1
(2) VH
(3) WH
(4) UL
(5) VL
(6) WL
(7) FO
(8) VNTC
(9) VDD
(10) VCC
(11) GND
NTC
ZD2
MMSZ5252B
C10
104
ZD3
MMSZ5252B
C9
104
ZD4
MMSZ5252B
C27
104
R
4
5V line
1
7
8
14
11
3
2
5
6
10
9
12
13
U1
LMV324
R32
0.008 2W
R33
0.008 2W
R34
0.008 2W
J 2
(1) VIU
(2) VIV
(3) VIW
5V
R6 39K 1%
C4 101
R14 39K 1%
C13 101
R27 39K 1%
C23 101
R40 7.87K 1%
C30 510
R1, R7, R8,
R15, R22, R29
: 78.7K 1%
C3, C12, C22
: 101
R1
R7
C3
R8
R15
C12
R29
C22
R22
R3 1.8K 1%
R5 1.8K 1%
R2 1.0K 1%
R4 1.0K 1%
R11 1.8K 1%
R13 1.8K 1%
R10 1.0K 1%
R12 1.0K 1%
C2 101
C11 101
R24 1.8K 1%
R26 1.8K 1%
R23 1.0K 1%
R25 1.0K 1%
C21 101
R37 1.8K 1%
R39 1.8K 1%
R36 1.0K 1%
R38 1.0K 1%
C29 101
C33 101
R41 8.2K 1%

Figure 2. Reference Design for 3-Phase Inverter
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2010 Fairchild Semiconductor Corporation 4 RD344_FNA41560 Rev. 0.0.1
2. Key Par amet er Desi gn
2.1. Sel ec t i on of Boot st r ap Capac i t anc e (C
BS
)
The bootstrap capacitor can be calculated by:
BS
Leak
BS
V
t I
C


=
(1)
where:
t = maximum on pulse width of high-side IGBT;
V
BS
= the allowable discharge voltage of the C
BS
(voltage ripple); and
I
Leak
= maximum discharge current of the C
BS
.

Normally, I
Leak
consist of the following items:
- Gate charge for turning the high-side IGBT on
- Quiescent current to the high-side circuit in the HVIC
- Level-shift charge required by level-shifters in HVIC
- Leakage current in the bootstrap diode
- C
BS
capacitor leakage current (ignored for non-electrolytic capacitors)
- Bootstrap diode reverse recovery charge.
Practically, 2mA of I
Leak
is recommended for Mini DIP SPM family in Motion-SPM


products (I
PBS
(operating V
BS
supply current) value in datasheet) .

Cal c ul at i on Ex ampl es of CBS
I
Leak
= circuit current (I
PBS
) = 2mA (recommended value)
V
BS
= discharged voltage = 0.1V (recommended value)
t = maximum on pulsewidth of high-side IGBT = 2ms (depends on system)
6
min _
10 0 . 4
1 . 0
2 . 0 2

=


=
V
ms mA
V
t I
C
BS
Leak
BS
(2)

More than 2~3times 8F Standard nominal capacitance 10F.

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2010 Fairchild Semiconductor Corporation 5 RD344_FNA41560 Rev. 0.0.1
2.2. Desi gn of Cur r ent -Sensi ng Ci r c ui t

Figure 3. General Circuit for Current Sensing

Figure 4. Typical Low-Side Current-Sensing Circuit
FNA41560 has a divided negative DC-link terminal (N
U
, N
V
, N
W
) for current sensing to
simplify current-sensing circuit design. Figure 3and Figure 4 show the typical three-shunt
current-sense circuit using the FNA41560 in Motion-SPM

.

The value of application circuit is calculated by the following equations.
In Figure 5, the output voltage of op-amp (V
OUT
) can be calculated by:
) ( ) (
6 5
5
4 2
7
min , min ,
R R
R
V
R R
R
V V
ref Shunt out
+
+
+
=
(3)

) ( ) (
6 5
5
4 2
7
max , max ,
R R
R
V
R R
R
V V
ref Shunt out
+
+
+
=
(4)

According to Equation 3, the voltage between shunt resistor (V
Shunt
) can be calculated by:
7
4 2
6 5
5
max max ,
]
) (
[
R
R R
R R
R
V V V
ref out Shunt
+

+
=
(5)

7
4 2
6 5
5
min min ,
]
) (
[
R
R R
R R
R
V V V
ref out Shunt
+

+
=
(6)

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2010 Fairchild Semiconductor Corporation 6 RD344_FNA41560 Rev. 0.0.1
2.3. Cal c ul at i on Ex ampl es f or Cur r ent -Sensi ng Ci r c ui t r y
Cal c ul at i on Condi t i ons
DUT: FNA41560
Op-Amp: LMV324
Resistance of shunt resistor: 8m, 1% tolerance, KOA
SC trip current: 22.5A (1.5 x I
C
(rated current))
Input voltage range of ADC of MCU: 0~+5V
Components value: refer to Figure 5 and Figure 6

Figure 5. Application Circuit of Current Sensing (VCC=5.0V, Voltage Gain=13.9)

Figure 6. Application Circuit of Current Sensing (VCC=3.3V, Voltage Gain=9.1)
VCC, Vref=5.0[V]
Voltage gain=13.9
Bandwidth = 86[kHz]
VCC, Vref=3.3V
Voltage gain=9.2
Bandwidth = 130[kHz]
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2010 Fairchild Semiconductor Corporation 7 RD344_FNA41560 Rev. 0.0.1

Figure 7. VADC (Input Voltage of AD Converter of MCU) vs. VShunt (Voltage of Shunt Resistor) in Current
Feedback Circuitry (Figure 5, Figure 6)

According to calculation conditions, Figure 5, and Equations 5 and 6, the voltage
between shunt resistor (V
Shunt,min
, V
Shunt,max
) can be calculated by:
V
k
k
k k
k
V V
R
R R
R R
R
V V V
ref out Shunt
179 . 0
39
8 . 2
]
7 . 78 7 . 78
7 . 78
5 0 [ ]
) (
[
7
4 2
6 5
5
min min ,
=

+

=
+

+
=
V
k
k
k k
k
V V
R
R R
R R
R
V V V
ref out Shunt
179 . 0
39
8 . 2
]
7 . 78 7 . 78
7 . 78
5 5 [ ]
) (
[
7
4 2
6 5
5
max max ,
=

+

=
+

+
=

According to Equation 3 and 4, the voltage of op-amp output can be calculated by:
V
k k
k
V
k
k
V
R R
R
V
R R
R
V V
ref Shunt out
0 )
7 . 78 7 . 78
7 . 78
5 ( )
8 . 2
39
179 . 0 ( ) ( ) (
6 5
5
4 2
7
min , min ,
=
+

+

=
+
+
+
=
V
k k
k
V
k
k
V
R R
R
V
R R
R
V V
ref Shunt out
0 . 5 )
7 . 78 7 . 78
7 . 78
5 ( )
8 . 2
39
179 . 0 ( ) ( ) (
6 5
5
4 2
7
max , max ,
=
+

+

=
+
+
+
=
For low control voltage systems, such as V
CC
=3.3V, the same consideration can be
performed on the circuit shown in Figure 6. The circuit in Figure 6 has a same
performance as the circuit in Figure 5. Figure 7 shows V
Shunt
vs. V
ADC
according to V
CC

variation (3.3V, 5.0V) and gain of op-amp.
2.4. Component s Cal c ul at i on Ex ampl es f or SCP
Cal c ul at i on Condi t i ons
DUT: FNA41560
Op-Amp: LMV324
Resistance of shunt resistor: 8m, 1% tolerance, KOA
SC trip current: 22.5A (1.5 x I
C
(rated current), can be changed by designer)
SC trip reference voltage: V
SC(min)
=0.45V, V
SC(typ)
=0.50V, V
SC(max)
=0.55V
Components value: refer to Figure 8
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2010 Fairchild Semiconductor Corporation 8 RD344_FNA41560 Rev. 0.0.1
V
k k
k
V V
R R
R
V
shunt shunt out
505 . 0 179 . 0 )
8 . 1 0 . 1
87 . 7
( ) ( ) (
9 8
13
=
+

=
+
=
+


Figure 8. Application Circuit of SCP(Short-Circuit Current Protection)

2.5. Pow er Rat i ng of Shunt Resi st or Cal c ul at i on Ex ampl e
Cal c ul at i on Condi t i ons
Vendor of shunt resistor: KOA (TLR3AW 8m)
Maximum load current of inverter (I
rms
): 10A
rms

Shunt resistor value at T
C
=25
o
C (R
SHUNT
): 8.0m
Derating ratio of shunt resistor at T
SHUNT
=100
o
C: 65%
Safety margin: 20%


Figure 9. Derating Curve of Shunt Resistor (KOA, TLA Series)
P
SHUNT
(I
2
rms
x R
SHUNT
x Margin) / Derating ratio)=(10
2
x 0.008x 1.2) / 0.65=1.48W
(Therefore, the proper power rating of shunt resistor is over 2.0W)

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2010 Fairchild Semiconductor Corporation 9 RD344_FNA41560 Rev. 0.0.1
2.6. Temper at ur e-Moni t or i ng Ci r c ui t
-20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120
0
50
100
150
200
250
300
350
400
450
500
550
600
MIN
TYP
MAX
R-T Curve

R
e
s
i
s
t
a
n
c
e
[
k

]
Temperature T
TH
[]

Figure 10. R-T Curve of NTC thermistor in Mini DIP SPM Package
Figure 10 is R-T curve of the integrated NTC thermistor in Mini DIP SPM

package.
For R-T table of NTC thermistor, refer to application note Mini DIP SPM

(AN-9070).

Motion-SPM
TM
MCU
V
DD
VTH
RTH
ADC Port
R
TH
NTC

Figure 11. Temperature-Sensing Circuit by NTC Thermistor

Figure 11 is example of a temperature-sensing circuit by NTC thermistor. In this
reference design, R
TH
is 6.8k and Figure 12 is the V-T curve at R
TH
=6.8k,
V
CC
=3.3V, and V
CC
= 5.0V.
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2010 Fairchild Semiconductor Corporation 10 RD344_FNA41560 Rev. 0.0.1

20 30 40 50 60 70 80 90 100 110 120
0
1
2
3
4
5
V
DD
=3.3V
V
DD
=5.0V
V
OUT(min)
V
OUT(typ)
V
OUT(max)
V-T Curve at V
DD
=5.0, 3.3V, R
TH
=6.8kohm

O
u
t
p
u
t

V
o
l
t
a
g
e

o
f

R
T
H

[
V
]
Temperature T
Thermistor
[
o
C]

Figure 12. V-T Curve of Temperature-Sensing Circuit in Reference Design


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2010 Fairchild Semiconductor Corporation 11 RD344_FNA41560 Rev. 0.0.1
2.7. Pr i nt Ci r c ui t Boar d(PCB) Layout Gui danc e

Figure 13. PCB Layout Guidance
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2010 Fairchild Semiconductor Corporation 12 RD344_FNA41560 Rev. 0.0.1
3. Rel at ed Resour c es
FNA41560 Smart Power Module Motion-SPM


AN-9070 Smart Power Module Motion-SPM

in Mini DIP SPM

User Guide
AN-9071 Smart Power Module Motion-SPM

in Mini DIP SPM

Thermal Performance Information


AN-9072-Smart Power Module Motion-SPM

in Mini DIP SPM

Mounting Guidance
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