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Abstract
Traditional methods of isolated MOSFET/IGBT gate drive are presented, and their pros and cons
assessed. The best options are chosen to meet our objective — a small, high speed, low cost, low
power isolated gate drive module.
Two small ferrite bead transformers are used for isolation, one transmits power at 2.5MHz, the other
sends narrow set reset pulses. On the secondary these pulses drive a transistor totem pole to ensure
high current drive, and the value is held by CMOS buffers with positive feedback. An alternative
design for driving logic level devices uses only an HC buffer on the secondary.
Double sided SMD construction (primary one side, secondary on the other) yields an upright module
40x18x5mm. Propagation delay was 20ns, and rise/fall time 15ns with a 1nF load. The design places
no limits on frequency of operation or duty cycle. Power supply requirements were 5V @ 20mA for
operation below 100kHz, dominated by magnetising current.
1 Introduction
2 Traditional Approaches
Usually a totem pole circuit powered from 12 or 15
Volts is used. A simple discrete circuit can serve ad-
Isolated MOSFET gate drive circuits are varied, and
mirably (fig 1) and is both effective and rugged. CMOS
range from the simple approaches used when the power
buffers or inverters can be parallelled, however the 4000
MOSFET was new technology, to the complex chip-set
series has poor output drive, and the newer HC and AC
solutions available today.
devices have a maximum supply of 6V, suitable only for
The gate (ie gate-source circuit) of a MOSFET (and logic level devices. The National DS0026 MOS clock
similarly, IGBT) appears purely capacitive, so no gate driver was used to fill the gap; now ICs specifically
drive current is needed in the steady state, unlike tran- designed for the task have proliferated, both CMOS
sistors. However, a high current low impedance drive (Harris ICL7667, Telcom TC426) and bipolar (Uni-
circuit is needed to inject or remove current from the trode UC3708,9) [2,3] . In addition to the basic func-
gate and slew Vgs in order to switch the device rapidly. tionality of these devices (TTL compatible inputs, high
The gate drain capacitance, although small, can also re- current outputs), other features found in these families
quire significant charge as the drain voltage slews (the include enable and shutdown inputs, internal flip-flops,
Miller effect). [1] and high speed comparators.
2.1 Isolation Using Pulse Transformers
Vg1
turn off before the next pulse [2] . 0
Vg2
Thinking laterally, only narrow pulses are necessary to 0
Figure 5: The circuit diagram of the SMD isolated gate To ensure the last dc value is held indefinitely at the
driver output, a buffer with positive feedback is used to latch
the value to one of the supply rails. This is one approach
used for active termination of high speed logic signals.
power supply makes little difference to the size or cost
A driver module using a set reset pulse transformer
of the entire module.
for signal transmission can easily be configured as
The pulse transformers were made using ferrite beads. either inverting or non-inverting simply by swapping
These are very inexpensive, however time consuming the transformer’s secondary connections. Performance
to wind. As each had only a small number of turns should remain otherwise identical.
which could be reduced further by a larger core, a better
One disadvantage of the set reset approach is the ill de-
alternative would be to etch the windings on the printed
fined startup state. For this evolution of driver, power
circuit board, and use a split ferrite core. [5]
supply sequencing will be used to avoid this problem
The gate signal was sent as set-reset pulses. This per- — signal processing and driver circuitry will always be
mitted arbitrary duty cycle signals of any frequency, active before power is applied to the main converter.
even DC levels. By using very narrow pulses, small A future solution would be to generate a reset pulse at
transformers with minimal turns could be used. Little power up and power down, or use a gate pull down re-
power is wasted in magnetising current. sistor in combination with the latching buffer to force a
low state at start up.
The set reset pulse arrangement is also the ideal way
to drive a capacitive load, which by its nature has The isolated power supply consists of another ferrite
“memory”. The transistor stage isolates and ampli- bead transformer, driven by parallelled HC CMOS out-
fies the pulses, rather than the traditional diode/zener or puts, and rectified by high speed signal diodes. HC
diode/MOSFET approach. This simple approach works CMOS is fast and pulls completely to the supply rails
very well — the sharp exponential switching character- for low currents, so power transfer is efficient, even at
istic of the transistors allows large currents to flow with 2.5MHz. Since only one MOSFET gate is driven by the
Vbe = 0:8V, and yet very low leakage at Vbe = 0:2V. In power supply, its power rating is small.
Cost was minimised by the deliberate choice of com- 4 Performance
mon components. Greatest cost would have been the
time consuming SMD construction and winding the Performance of the driver met all expectations. Two
small pulse transformers. The next version would seek modules were driven by one HC output, each with one
to address these problems — professionally made PCBs standard 60V, 15A MOSFET (MTP3055) gate as a load.
with a soldermask and consistent pad levels would as- The measured propagation delay (input to gate) was ap-
sist the SMD construction, and PCB based transformer proximately 20ns, and rise and fall times 15ns, for both
windings would avoid the winding of transformers. the inverting and non-inverting versions of the driver
SMD construction reduced the size of the resulting (fig. 8). With different capacitive loads (1–5nF), the
module, and allowed the primary to be placed on one rise/fall time scaled linearly (15-65ns), while the propa-
side and the secondary on the other. The SMD mod- gation delay remained constant(20nS). The linear ramp
ule (fig. 6) stands vertically, with input and output pins of the gate voltage from rail to rail confirmed the tran-
on the bottom edge, and the pulse transformers loop- sistor output stage behaves as a constant current source,
ing over the top edge. The complete module measures here with a value of about 0:5A.
approximately 40x18x5mm.
Inverting Output 2V/div Non inverting Output 2V/div
Input 1V/div
Input 1V/div
12 I in (mA) 120
Mosfet Drain
V mA
5pF
Mosfet Gate 10 Vpk Out
100
(Volts)
Gate driver input 2.5pF
8 80
5V/div Gnd 1pF
Gnd 2V/div
6 60
1pF
4 40
2.5pF
Mosfet Drain I in
2
5pF
20
Mosfet Gate
0 2 0
3 4 5 6 7
10 10 10 Freq (Hz) 10 10 10
Gate driver input
5V/div Gnd
2V/div Gnd
Figure 11: Peak driver output voltage and input supply
current for different loads plotted against frequency.
Bibliography
Gate driver input
Mosfet Drain
[2] Harris Semiconductor, “Intelligent Power ICs,”
1992.