EE207: Electronic Devices

Slot 2: Monday 9:30 Tuesday 10:30 Thursday 11:30 Total Hours: 40 (Saturdays / Evenings for extra classes & make up when missed) Instructions: 26, Tutorials: 12, Quiz:2 Quiz-1: 20/8 (Thursday, 11:30 12:30): Mid-semester: per schedule Quiz-2: 22/10 (Thursday, 11:30 12:30): End-semester: per schedule 10% 25% 15% 50% 1

All Examinations will be closed notes and books No formula sheets will be allowed during exams Bring your own calculator Students below 40% (relative) will be awarded FR

Course Outline

Introduction to Semiconductors PN Junction diode Bipolar Junction Transistor MOS Capacitor MOS Transistor

Introduction to Semiconductors
Quantum Mechanics Crystal structure and Energy Bands, Concept of electrons and holes, Effective Mass Electrons and holes in semiconductors; Statistics: Distribution functions, Density of states Semiconductors Intrinsic & Extrinsic, Donors and Acceptors Generation & Recombination Drift & Diffusion, Mobility, Scattering, Continuity Equation, Equation of State
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PN Junction Diode
Introduction, Junction under 0 bias electrostatics Junction under forward bias Recombination in quasi-neutral regions Junction under forward bias Recombination in depletion region Junction under reverse bias Generation from quasi-neutral and depletion region Small signal response Large signal response (switching)
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Bipolar Junction Transistor

Introduction Principle of operation Modes of BJT operation minority carrier profile BJT modeling Ebers-Moll model Charge control model, Drift transistor Base width modulation & early voltage Breakdown in BJT Avalanche and Punch through

MOS Capacitor
Introduction, Modes of operation, Minority and majority carriers Electrostatics & CV Basic parameter extraction Non-ideal MOS system, Definition of traps, Extraction of traps from CV measurements Trap generation under high-field stress; Current conduction mechanisms

MOS Transistor
Introduction, Modes of operation, Long channel transistor, Basic long-channel current derivations Short channel effects (mobility degradation, velocity saturation, VT-roll of, DIBL, punch through) MOSFET scaling, innovations in gate, junction, novel device architectures

Semiconductors
Ohms law: I = V / R J = E (conductivity) = 1 / ; = R A / L

= 10-4 10-6 -cm (metal) = 10-4 1012 -cm (semiconductors)

Temperature dependence: Metals: R increases at higher T Semiconductors: R reduces at higher T

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Semiconductors

Group IV Si, Ge Group III-V GaAs, InP, AlAs Group II-VI CdTe, ZnS
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