J108/J109/J110/MMBFJ108

J108/J109/J110/MMBFJ108
N-Channel Switch
This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
1 TO-92 3

2 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate 1

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings * TA=25C unless otherwise noted

Symbol VDG VGS IGF TJ, Tstg Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 25 -25 10 -55 ~ +150 Units V V mA C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TA=25C unless otherwise noted

Symbol Parameter Test Condition IG = -10A, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100C VDS = 15V, ID = 10nA 108 109 110 108 109 110 108 109 110 -3.0 -2.0 -0.5 80 40 10 8.0 12 18 85 15 15 Min. -25 -3.0 -200 -10 -6.0 -4.0 Max. Units V nA nA V V V mA mA mA pF pF pF Off Characteristics Gate-Source Breakdwon Voltage V(BR)GSS IGSS VGS(off) Gate Reverse Current Gate-Source Cutoff Voltage

On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0

rDS(on)

Drain-Source On Resistance

VDS 0.1V, VGS = 0

Small Signal Characteristics Cdg(on) Csg(off) Cdg(on) Csg(off) Drain Gate & Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 0, f = 1.0MHz VDS = 0, VGS = -10, f = 1.0MHz VDS = 0, VGS = -10, f = 1.0MHz

* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%

2002 Fairchild Semiconductor Corporation

Rev. B1, November 2002

J108/J109/J110/MMBFJ108

Thermal Characteristics TA=25C unless otherwise noted

Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. J108 - 110 625 5.0 125 357 556 *MMBFJ108 350 2.8 Units mW mW/C C/W C/W

* Device mounted on FR-4 PCB 1.6 1.6 0.06"

2002 Fairchild Semiconductor Corporation

Rev. B1, November 2002

J108/J109/J110/MMBFJ108

Typical Characteristics
Common Drain-Source
r DS - DRAIN "ON" RESISTANCE ()
100 - DRAIN CURRENT (mA)
V GS = 0 V
- 2.0 V

Parameter Interactions
100 50
I DSS @ V DS = 5.0V, V GS = 0 PULSED r DS @ V DS = 100mV, V GS = 0 V GS(off) @ V DS = 5.0V, I
D

1,000
I
DSS -

500

80
- 1.0 V - 3.0 V

= 3.0 nA

DRAIN CURRENT (mA)

60 40 20
- 5.0 V

r DS

10 5
I DSS

100 50

- 4.0 V T A = 25! C TYP V GS(off) = - 5.0 V

I 0

0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V)

0.1 VGS (OFF)

10 _ _ _ 0.5 1 5 10 - GATE CUTOFF VOLTAGE (V)

_

Figure 1. Common Drain-Source

Figure 2. Parameter Interactions

Common Drain-Source
100 C ts (C rs ) - CAPACITANCE (pF) - DRAIN CURRENT (mA)
f = 0.1 - 1.0 MHz
C iss (V DS = 5.0V)

Common Drain-Source
50 40 30
V GS = 0 V
T A = 25! C TYP V GS(off) = - 0.7 V

10
C rss (VDS = 0 )

20 10 0

- 0.1 V - 0.2 V - 0.3 V - 0.4 V - 0.5 V

-8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V)

-4

-20

I 0

1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE (V)

Figure 3. Common Drain-Source

Figure 4. Common Drain-Source

r DS - NORMALIZED RESISTANCE

100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V) 1
V GS(off) @ 5.0V, 10 A

e n - NOISE VOLTAGE (nV / Hz)

Normalized Drain Resistance vs Bias Voltage

Noise Voltage vs Frequency

100 50
V DG = 10V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f 1.0 kHz

r DS r DS = V GS ________ 1 V GS(off)

10 5
I D = 1.0 mA I D = 10 mA

1 0.01 0.03

0.1 0.5 1 2 10 f - FREQUENCY (kHz)

100

Figure 5. Normalized Drain Resistance vs Bias Voltage

Figure 6. Noise Voltage vs Frequency

2002 Fairchild Semiconductor Corporation

Rev. B1, November 2002

J108/J109/J110/MMBFJ108

Typical Characteristics (Continued)

Switching Turn-On Time vs Gate-Source Cutoff Voltage
10 t ON ON - TURN-ON TIME (ns) 8 6 4
I D = 10 mA VDD = 1.5V V GS(off) = - 12V I D = 30 mA

Switching Turn-On Time vs Drain Current

50 TURN-OFF TIME (ns) 40 30 20 10 0

! TA = 25 C

V GS(off) = - 8.5V V GS(off) = - 5.5V V GS(off) = - 3.5V TA = 25! C VDD = 1.5V V GS(off) = - 12V

2 0

-2 -4 -6 -8 -10 VGS(off) GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)

t 0

OFF-

10 15 20 I D - DRAIN CURRENT (mA)

25

Figure 7. Switching Turn-On Time vs Gate-Source Cutoff Voltage

Figure 8. Switching Turn-On Time vs Drain Current

r DS - DRAIN "ON" RESISTANCE ()

On Resistance vs Drain Current

100 50
V GS(off) = - 3.0V 125! C V GS = 0

g os - OUTPUT CONDUCTANCE ( mhos)

Output Conductance vs Drain Current

100
V DG = 5.0V
10V

V GS(off)
- 4.0V

5.0V 10V 15V 20V

15V 20V

10 5
! 25 C

C 125!

10
- 2.0V

5.0V 10V 15V 20V

C 25!
! C - 55 V GS(off) = - 5.0V

T A = 25! C f = 1.0 kHz

- 1.0V

10 I D - DRAIN CURRENT (mA)

100

1 0.1

1 I D - DRAIN CURRENT (mA)

10

Figure 9. On Resistance vs Drain Current

Figure 10. Output Conductance vs Drain Current

g fs - TRANSCONDUCTANCE (mmhos)

Transconductance vs Drain Current

T A = 25! C V DG = 10V f = 1.0 kHz T A = - 55! C

PD - P O W E R D IS S IP A T IO N (m W )

100

700

C T A = 25! C T A = 125!

600

500

T O -9 2
400

10
V GS(off) = - 1.0V V GS(off) = - 3.0V V GS(off) = - 5.0V

S u p e rS O T -3

300

200

100

1 0.1

1 I D - DRAIN CURRENT (mA)

10

0 0 25 50 75 100
o

125

150

TEM PERATURE ( C)

Figure 11. Transconductance vs Drain Current

Figure 12. Power Dissipation vs Ambient Temperature

2002 Fairchild Semiconductor Corporation

Rev. B1, November 2002

J108/J109/J110/MMBFJ108

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. B1, November 2002

J108/J109/J110/MMBFJ108

Package Dimensions (Continued)

SuperSOT-3

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. B1, November 2002

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1