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Studythecharacteristicsofenergybandsasafunctionofapplied voltageinthemetaloxidesemiconductorstructureknownasthe MOScapacitor.TheMOScapacitoristheheartoftheMOSFET. Discusstheconceptofsurfaceinversioninthesemiconductorofthe MOScapacitor. Defineandderivetheexpressionforthethreshold voltage,whichisa basicparameteroftheMOSFET. DiscussvariousphysicalstructuresofMOSFETs,including enhancementanddepletionmodedevices. DerivetheidealcurrentvoltagerelationshipoftheMOSFET. DevelopthesmallsignalequivalentcircuitoftheMOSFET.Thiscircuit isusedtorelatesmallsignalcurrentsandvoltagesinanalogcircuits. DerivethefrequencylimitingfactorsoftheMOSFET.
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10.1|THETWOTERMINALMOS STRUCTURE
Theparametertox inthefigureisthe thicknessoftheoxideandox isthe permittivityoftheoxide.
10.1.1EnergyBandDiagrams
positiveelectronenergyisplotted upwardandpositivevoltageis plotteddownward. Figure10.5showsthattheintrinsic Fermilevelatthesurfaceisnow below theFermilevel. createdaninversionlayerof electronsattheoxide semiconductorinterface.
ThesametypeofenergybanddiagramscanbeconstructedforaMOScapacitor withanntypesemiconductorsubstrate.
10.1.2
DepletionLayerThickness
Thepotentials iscalledthe surfacepotential;itisthe difference(inV)betweenEFi measuredinthebulk semiconductorandEFi measured atthesurface. ThespacechargewidthXd, s isthepermittivityofthe semiconductor.
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Theelectronconcentrationatthesurfaceisthesameastheholeconcentrationin thebulkmaterial.Thisconditionisknownasthethresholdinversionpoint.The appliedgatevoltagecreatingthisconditionisknownasthethresholdvoltage. Ifthegatevoltageincreasesabovethisthresholdvalue,theconductionbandwill bendslightly closertotheFermilevel,butthechangeintheconductionbandatthe surfaceisnowonlyaslightfunctionofgatevoltage. Theelectronconcentrationatthesurfaceisanexponentialfunctionofthesurface potential.Thesurfacepotentialmayincreasebyafew(kT/e)volts,whichwill changetheelectronconcentrationbyordersofmagnitude,butthespacecharge widthchangesonlyslightly.Inthiscase,then,thespacechargeregionhas essentiallyreachedamaximumwidth. 7
10.1.3
SurfaceChargeDensity
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Degeneratelydopedpolysilicon isusedasthemetalgate.
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10.1.6 ThresholdVoltage Thethresholdinversionpoint,inturn,isdefinedasthe conditionwhenthesurfacepotentialiss=2fpfortheptypesemiconductor ands=2fnforthentypesemiconductor Thespacechargewidthhasreached itsmaximum value. Thereisanequivalent oxidechargeQss andthepositive chargeonthemetalgateat thresholdisQmT. neglecttheinversionlayerchargeatthis thresholdinversionpoint.
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Extremelyimportant!!
MoreNaVTN ,morepositive
Thesametypeofderivationcan bedonewithanntype semiconductorsubstrate,
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forallvaluesofpositiveoxidecharge
MoreNd,VTP morenegative
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10.2|CAPACITANCEVOLTAGECHARACTERISTICS
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inversion
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LowfrequencyCV
Thethreedashedsegmentscor respondtothethreecomponentsCox, CSCD,andCmin.Thesolidcurveis theidealnetcapacitanceoftheMOS capacitor.
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10.2.2FrequencyEffects
Therearetwosourcesofelectronsthatcanchangethechargedensityof theinversionlayer.Thefirstsourceisbydiffusionofminoritycarrier electronsfromtheptypesubstrateacrossthespacechargeregion.This diffusionprocessisthesameasthatinareversebiasedpn junctionthat generatestheidealreversesaturationcurrent.Thesecondsourceof electronsisbythermalgenerationofelectronholepairswithinthe spacechargeregion.Thisprocessisagainthesameasthatinareverse biasedpn junctiongeneratingthereversebiasedgenerationcurrent. Inthelimitofaveryhighfrequency,theinversionlayerchargewillnot respondtoadifferentialchangeincapacitorvoltage.
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10.2.3FixedOxideandInterfaceChargeEffects
TheCVcharacteristicscanbe usedtodeterminetheequivalent fixedoxidecharge.Foragiven MOSstructure,ms andCoxare known,sotheidealflatband voltageandflatbandcapacitance canbecalculated.The experimentalvalueofflatband voltagecanbemeasuredfromthe CVcurve,andthevalueoffixed oxidechargecanthenbe determined.TheCV measurementsareavaluable diagnostictooltocharacterizea MOSdevice.
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thereisnowanetnegative chargeintheacceptorstates.
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CVcurvesbecomesmearedout
,Stretchout
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10.3|THEBASICMOSFETOPERATION
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*10.3.3CurrentVoltageRelationshipMathematicalDerivation Inthisanalysis,wemakethefollowingassumptions: 1.Thecurrentinthechannelisduetodrift ratherthandiffusion. 2.Thereisnocurrentthroughthegateoxide. 3.AgradualchannelapproximationisusedinwhichEy/y >Ex/x.This approximationmeansthatExisessentiallyaconstant. 4.Anyfixedoxidechargeisanequivalentchargedensityattheoxide semiconductorinterface. 5.Thecarriermobilityinthechannelisconstant.
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conceptofchargeneutrality,
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needanexpressionforEox.
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forverysmallVDS
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10.3.4Transconductance
theseelectronsareatahigherpotentialenergythanaretheelectrons inthesource. Thenewlycreatedelectronswillmovelaterallyandflowoutofthe sourceterminal. Whens =2fp+VSB,thesurfacereachesanequilibriuminversion condition,asshowninFigure10.50c. ThecurverepresentedasEFn istheFermilevelfromthep substrate throughthereversebiasedsourcesubstratejunctiontothesource contact.
ThespacechargeregionwidthundertheoxideincreasesfromtheoriginalxdT valuewhenaVSB>0isapplied.
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10.4|FREQUENCYLIMITATIONS
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Oneparameter,rds,showninFigure10.53,isnotshowninFigure10.52. ThisresistanceisassociatedwiththeslopeIDversusVDS.
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*10.5|THECMOSTECHNOLOGY
Inmostcases,theptypesubstratedopinglevelmustbelargerthanthen typesubstratedopingleveltoobtainthedesiredthresholdvoltages. Thelargerpdopingcaneasilycompensatetheinitialndopingtoformthe pwell.
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