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May 2011
FDD6685
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced PowerTrench
Features
40 A, 30 V. RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Qualified to AEC Q101
process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
D G S
TO-252
D G
Parameter
Ratings 30
25
Units
V V A W
Continuous Drain Current @TC=25C (Note 3) @TA=25C (Note 1a) Pulsed, PW 100s (Note 1b) Power Dissipation for Single Operation
(Note 1) (Note 1a) (Note 1b)
40 11 100
52 3.8 1.6
PD
TJ, TSTG
55 to +175
2.9 40 96
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
FDD6685 Rev D1
FDD6685
Electrical Characteristics
Symbol
EAS IAS
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
ID = 11 A
Units
mJ A
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 25V, VGS = 0 V VDS = 0 V 30 24 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 9 A VGS = 10 V,ID = 11 A,TJ=125C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 11 A
1.8 5 14 21 20
V mV/C
20 30
ID(on) gFS
20 26
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
V GS = 0 V,
pF pF pF
f = 1.0 MHz
3.6
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
17 11 43 21
31 21 68 34 24
ns ns ns ns nC nC nC
ID = 11 A,
17 9 4
0.8 26 13
1.2
V ns nC
FDD6685 Rev D1
FDD6685
Electrical Characteristics
Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD RDS(ON)
where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V.
FDD6685 Rev D1
FDD6685
Typical Characteristics
40 VGS = -10V -6.0V -ID, DRAIN CURRENT (A) 30 -5.0V -4.5V NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V
2.4 2.2 2 1.8 -4.0V 1.6 -4.5V 1.4 1.2 1 0.8 0 1 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 3 0 2 4 6 -ID, DRAIN CURRENT (A) 8 10 -5.0V -6.0V -8.0V -10V VGS = -3.5V
20
-3.5V
10 -3.0V
ID = -5.5A 0.06
1.2
0.04
TA = 125 C
0.8
0.02
TA = 25 C
0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 175
TA = -55oC
VGS = 0V
o
10
0.001
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6685 Rev D1
FDD6685
Typical Characteristics
2400
f = 1MHz VGS = 0 V
CAPACITANCE (pF)
1800
Ciss
1200
Coss
600
2 Crss 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30
100 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1 10s DC VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.01 0.01 1ms 10ms 100ms 100s
80
60
40
0.1
20
100.00
0 0.01
0.1
100
1000
0.2
0.1
0.1 0.05
P(pk)
0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000
FDD6685 Rev D1
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS Power-SPM AccuPower The Power Franchise The Right Technology for Your Success F-PFS PowerTrench Auto-SPM FRFET PowerXS AX-CAP* Programmable Active Droop BitSiC Global Power ResourceSM Build it Now Green FPS QFET TinyBoost QS CorePLUS Green FPS e-Series TinyBuck Quiet Series CorePOWER Gmax TinyCalc RapidConfigure CROSSVOLT GTO TinyLogic CTL IntelliMAX TINYOPTO Current Transfer Logic ISOPLANAR TinyPower Saving our world, 1mW/W/kW at a time DEUXPEED MegaBuck TinyPWM Dual Cool SignalWise MICROCOUPLER TinyWire EcoSPARK SmartMax MicroFET TranSiC EfficentMax SMART START MicroPak TriFault Detect ESBC SPM MicroPak2 TRUECURRENT* STEALTH MillerDrive SerDes SuperFET MotionMax SuperSOT-3 Motion-SPM Fairchild SuperSOT-6 mWSaver Fairchild Semiconductor UHC SuperSOT-8 OptiHiT FACT Quiet Series Ultra FRFET SupreMOS OPTOLOGIC FACT UniFET OPTOPLANAR SyncFET FAST VCX Sync-Lock FastvCore VisualMax * FETBench XS FlashWriter * PDP SPM
tm
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Rev. I54
Preliminary
First Production