You are on page 1of 6

FDD6685

May 2011

FDD6685
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced PowerTrench

Features
40 A, 30 V. RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Qualified to AEC Q101

process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).

D G S
TO-252
D G

Absolute Maximum Ratings


Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage

TA=25oC unless otherwise noted

Parameter

Ratings 30
25

Units
V V A W

Continuous Drain Current @TC=25C (Note 3) @TA=25C (Note 1a) Pulsed, PW 100s (Note 1b) Power Dissipation for Single Operation
(Note 1) (Note 1a) (Note 1b)

40 11 100
52 3.8 1.6

PD

TJ, TSTG

Operating and Storage Junction Temperature Range

55 to +175
2.9 40 96

Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)

C/W C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2011 Fairchild Semiconductor Corporation

FDD6685 Rev D1

FDD6685

Package Marking and Ordering Information


Device Marking FDD6685 Device FDD6685 Reel Size 13 Tape Width 12mm Quantity 2500 units

Electrical Characteristics
Symbol
EAS IAS

TA = 25C unless otherwise noted

Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)

Test Conditions
ID = 11 A

Min Typ Max


42 11

Units
mJ A

Drain-Source Avalanche Ratings (Note 4)

Off Characteristics
BVDSS BVDSS TJ IDSS IGSS VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 25V, VGS = 0 V VDS = 0 V 30 24 1 100 V mV/C A nA

On Characteristics
VGS(th) VGS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance

VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 9 A VGS = 10 V,ID = 11 A,TJ=125C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 11 A

1.8 5 14 21 20

V mV/C

20 30

ID(on) gFS

20 26

A S

Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)

VDS = 15 V, f = 1.0 MHz VGS = 15 mV,

V GS = 0 V,

1715 440 225

pF pF pF

f = 1.0 MHz

3.6

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

VDD = 15 V, VGS = 10 V,

ID = 1 A, RGEN = 6

17 11 43 21

31 21 68 34 24

ns ns ns ns nC nC nC

VDS = 15V, VGS = 5 V

ID = 11 A,

17 9 4

DrainSource Diode Characteristics and Maximum Ratings


VSD Trr Qrr DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.2 A
(Note 2)

0.8 26 13

1.2

V ns nC

IF = 11 A, diF/dt = 100 A/s

FDD6685 Rev D1

FDD6685

Electrical Characteristics
Notes:

TA = 25C unless otherwise noted

1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper

b) RJA = 96C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD RDS(ON)

where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V.

4. Starting TJ = 25C, L = 0.69mH, IAS = 11A

FDD6685 Rev D1

FDD6685

Typical Characteristics

40 VGS = -10V -6.0V -ID, DRAIN CURRENT (A) 30 -5.0V -4.5V NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V

2.4 2.2 2 1.8 -4.0V 1.6 -4.5V 1.4 1.2 1 0.8 0 1 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 3 0 2 4 6 -ID, DRAIN CURRENT (A) 8 10 -5.0V -6.0V -8.0V -10V VGS = -3.5V

20

-3.5V

10 -3.0V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.


0.08 RDS(ON), ON-RESISTANCE (OHM)

1.6 NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -11.0A VGS = -10V 1.4

ID = -5.5A 0.06

1.2

0.04

TA = 125 C

0.8

0.02

TA = 25 C

0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 175

0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10

Figure 3. On-Resistance Variation with Temperature.


40 125 C -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 30 25 C 20
o

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.


100

TA = -55oC

VGS = 0V
o

10 TA = 125 C 1 25oC 0.1 -55oC 0.01


o

10

0.001

0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDD6685 Rev D1

FDD6685

Typical Characteristics

10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -11.0 A 8 VDS = 10V 30V 6 20V 4

2400
f = 1MHz VGS = 0 V

CAPACITANCE (pF)

1800
Ciss

1200

Coss

600
2 Crss 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30

0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30

Figure 7. Gate Charge Characteristics.


1000 P(pk), PEAK TRANSIENT POWER (W) 100

Figure 8. Capacitance Characteristics.

100 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1 10s DC VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.01 0.01 1ms 10ms 100ms 100s

80

SINGLE PULSE RJA = 96C/W TA = 25C

60

40

0.1

20

0.10 1.00 10.00 VDS, DRAIN-SOURCE VOLTAGE (V)

100.00

0 0.01

0.1

1 10 t1, TIME (sec)

100

1000

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE


D = 0.5

0.2

RqJA(t) = r(t) * RqJA RqJA = 96 C/W

0.1

0.1 0.05

P(pk)
0.02 0.01

t1 t2 TJ - TA = P * RqJA(t) Duty Cycle, D = t1 / t2

0.01
SINGLE PULSE

0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDD6685 Rev D1

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS Power-SPM AccuPower The Power Franchise The Right Technology for Your Success F-PFS PowerTrench Auto-SPM FRFET PowerXS AX-CAP* Programmable Active Droop BitSiC Global Power ResourceSM Build it Now Green FPS QFET TinyBoost QS CorePLUS Green FPS e-Series TinyBuck Quiet Series CorePOWER Gmax TinyCalc RapidConfigure CROSSVOLT GTO TinyLogic CTL IntelliMAX TINYOPTO Current Transfer Logic ISOPLANAR TinyPower Saving our world, 1mW/W/kW at a time DEUXPEED MegaBuck TinyPWM Dual Cool SignalWise MICROCOUPLER TinyWire EcoSPARK SmartMax MicroFET TranSiC EfficentMax SMART START MicroPak TriFault Detect ESBC SPM MicroPak2 TRUECURRENT* STEALTH MillerDrive SerDes SuperFET MotionMax SuperSOT-3 Motion-SPM Fairchild SuperSOT-6 mWSaver Fairchild Semiconductor UHC SuperSOT-8 OptiHiT FACT Quiet Series Ultra FRFET SupreMOS OPTOLOGIC FACT UniFET OPTOPLANAR SyncFET FAST VCX Sync-Lock FastvCore VisualMax * FETBench XS FlashWriter * PDP SPM
tm
tm

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I54

Preliminary

First Production

No Identification Needed Obsolete

Full Production Not In Production

You might also like