PD -2.

339

HFA25TB60
HEXFRED
Features

TM

Ultrafast, Soft Recovery Diode

VR = 600V VF (typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM = 10A trr(typ.) = 23ns di(rec)M/dt (typ.) = 250A/s

Benefits

Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions

Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count

Description

International Rectifier's HFA25TB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

TO-220AC

Absolute Maximum Ratings

Parameter
VR IF @ T C = 25C IF @ T C = 100C IFSM IFRM IAR PD @ TC = 25C PD @ TC = 100C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Repetitive Avalanche Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range

Max.
600 25 225 100 2.0 125 50 -55 to +150

Units
V

W C

* 125C
4/2/97

HFA25TB60
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
VBR VFM I RM CT LS Cathode Anode Breakdown Voltage Max Forward Voltage Max Reverse Leakage Current Junction Capacitance Series Inductance

Min. Typ. Max. Units

600 1.3 1.7 1.5 2.0 1.3 1.7 1.5 20 600 2000 55 100 8.0 V V A pF nH

Test Conditions
IR = 100A IF = 25A See Fig. 1 IF = 50A IF = 25A, T J = 125C See Fig. 2 VR = VR Rated TJ = 125C, VR = 0.8 x VR RatedD Rated See Fig. 3 VR = 200V Measured lead to lead 5mm from package body

Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified)

Parameter
trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time See Fig. 5, 6 & 16 Peak Recovery Current See Fig. 7& 8 Reverse Recovery Charge See Fig. 9 & 10 Peak Rate of Fall of Recovery Current During tb See Fig. 11 & 12

Min. Typ. Max. Units

23 50 75 ns 105 160 4.5 10 A 8.0 15 112 375 nC 420 1200 250 A/s 160

Test Conditions
IF = 1.0A, dif /dt = 200A/s, VR = 30V TJ = 25C TJ = 125C I F = 25A TJ = 25C TJ = 125C V R = 200V TJ = 25C TJ = 125C dif/dt = 200A/s TJ = 25C TJ = 125C

Thermal - Mechanical Characteristics

Parameter
Tlead R JC RJA RCS Wt Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Weight Mounting Torque

Min.
6.0 5.0

Typ.
0.5 2.0 0.07

Max.
300 1.0 80 12 10

Units
C K/W g (oz) Kg-cm lbfin

L=100H, duty cycle limited by max TJ 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased

HFA25TB60
100

10000

Reverse Current - IR (A)

T J = 150C
1000 100 10 1 0.1 0.01 0 100 200 300 400 500

TJ= 125C

Instantaneous Forward Current - I F (A)

TJ = 150C T = 125C
J J

TJ = 25C
A 600

T = 25C
10

Reverse Voltage - V R (V)

Fig. 2 - Typical Reverse Current vs. Reverse Voltage

1000

Junction Capacitance -CT (pF)

T = 25C J
100

1 0.6

A 1.0 1.4 1.8 2.2 2.6

Forward Voltage Drop - V FM (V)

Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

10 1 10 100

A 1000

Reverse Voltage - VR (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

Thermal Response (Z thJC)

1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1

0.01 0.00001

0.0001

t1, Rectangular Pulse Duration (sec)

Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics

HFA25TB60
140 VR = 200V TJ = 125C TJ = 25C 120
25 30 VR = 200V TJ = 125C TJ = 25C

100

20

I F = 50A I F = 25A I F = 10A

trr- (nC)

80

I F = 50A I F = 25A I F = 10A

Irr- ( A)
A

15

60

10

40

20 100

di f /dt - (A/s)

1000

0 100

di f /dt - (A/s)

1000

Fig. 5 - Typical Reverse Recovery vs. dif/dt

1400 VR = 200V TJ = 125 C TJ = 25C

Fig. 6 - Typical Recovery Current vs. dif/dt

10000 VR = 200V TJ = 125C TJ = 25C

1200

1000

I F = 50A I F = 25A IF = 10A

800

di (rec) M/dt- (A /s)

Qrr- (nC)

1000

I F = 50A I F = 25A I F = 10A

600

400

200

A 0 100

di f /dt - (A/s)

1000

100 100

di f /dt - (A/s)

1000

Fig. 7 - Typical Stored Charge vs. di f/dt

Fig. 8 - Typical di(rec)M/dt vs. dif/dt

HFA25TB60
3

IF

t rr ta tb
4

REVERSE RECOVERY CIRCUIT

VR = 200V

0 Q rr I RRM

0.5 I RRM di(rec)M/dt

5

0.01 L = 70H D.U.T. D IRFP250 S

1

0.75 I RRM di f /dt

4. Qrr - Area under curve defined by trr and I RRM t rr X IRRM Qrr = 2

dif/dt ADJUST G

1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current

3. trr - Reverse recovery time measured 5. di(rec)M/dt - Peak rate of change of from zero crossing point of negative current during tb portion of trr going IF to point where a line passing through 0.75 IRRM and 0.50 I RRM extrapolated to zero current

Fig. 9 - Reverse Recovery Parameter Test Circuit

Fig. 10 - Reverse Recovery Waveform and Definitions

L = 100H HIGH-SPEED SWITCH Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + Vd = 50V

I L(PK)

DUT

DECAY TIME V (AVAL) V R(RATED)

Fig. 11 - Avalanche Test Circuit and Waveforms

HFA25TB60

Conforms to JEDEC Outline TO-220AC Dimensions in millimeters and inches

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/97