AUTOMOTIVE GRADE

PD - 97697A

AUIRF3808
HEXFET Power MOSFET
75V 5.9m 7.0m 140A

Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Description

V(BR)DSS RDS(on) typ. max ID

G S

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

G TO-220AB AUIRF3808

G Gate

D Drain

S Source

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.

Parameter
ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current

Max.
140 97 550 330 2.2 20 430 82 See Fig. 12a, 12b, 15, 16 5.5 -55 to + 175 300 10 lbf in (1.1N m)

Units
A W W/C V mJ A mJ V/ns C

PD @TC = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS EAS IAR EAR dv/dt TJ TSTG Avalanche Current

Single Pulse Avalanche Energy (Thermally Limited)

Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and

ch e

Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw

Thermal Resistance
RJC RCS RJA Junction-to-Case

Parameter

Typ.
0.50

Max.
0.45 62

Units
C/W

Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/

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Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Min. Typ. Max. Units

75 2.0 100 0.086 5.9 7.0 4.0 20 250 200 -200

Conditions

V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 82A V VDS = VGS, ID = 250A S VDS = 25V, ID = 82A A VDS = 75V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 150C nA VGS = 20V VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance

Min. Typ. Max. Units

150 31 50 16 140 68 120 4.5 7.5 5310 890 130 6010 570 1140 220 47 76 nC

Conditions
ID = 82A VDS = 60V VGS = 10V VDD = 38V ID = 82A RG = 2.5 VGS = 10V Between lead,

f f

ns

nH

6mm (0.25in.) from package

pF

S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 60V, = 1.0MHz VGS = 0V, VDS = 0V to 60V

Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min. Typ. Max. Units

93 340 140 A 550 1.3 140 510 V ns nC

Conditions
MOSFET symbol showing the integral reverse
G D

p-n junction diode. TJ = 25C, IS = 82A, VGS = 0V TJ = 25C, IF = 82A di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .

max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.130mH RG = 25, IAS = 82A. (See Figure 12). ISD 82A, di/dt 310A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%.

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

R is measured at TJ of approximately 90C.

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AUIRF3808
Qualification Information
Automotive (per AEC-Q101) Qualification Level

Comments: This part number(s) passed Automotive qualification. IRs Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 Class M4 (+/- 800V) AEC-Q101-002 N/A

Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant

ESD

Class H2 (+/- 4000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage.

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AUIRF3808

1000
TOP

I D, Drain-to-Source Current (A)

I D, Drain-to-Source Current (A)

BOTTOM

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V

1000
TOP

BOTTOM

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V

100

100

4.5V

4.5V

10

10

1 0.1 1

20s PULSE WIDTH T J= 25 C

10 100

1 0.1 1

20s PULSE WIDTH T J= 175 C

10 100

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000.00

3.0

I D = 137A

ID , Drain-to-Source Current )

2.5

RDS(on) , Drain-to-Source On Resistance

TJ = 175C

2.0

(Normalized)

100.00

1.5

TJ = 25C

1.0

0.5

10.00 1.0 3.0 5.0 7.0

VDS = 15V 20s PULSE WIDTH

9.0 11.0 13.0 15.0

0.0 -60 -40 -20 0 20 40 60 80

V GS = 10V
100 120 140 160 180

TJ , Junction Temperature

( C)

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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AUIRF3808

100000

VGS = 0V, f = 1 MHZ Ciss = C + C gs gd, C ds SHORTED Crss = C gd Coss = C ds + Cgd

VGS , Gate-to-Source Voltage (V)

12

ID = 82A

10

VDS = 60V VDS = 37V VDS = 15V

C, Capacitance(pF)

10000

Ciss

1000

Coss

Crss
100 1 10 100
0 0 40 80 120 160

VDS , Drain-to-Source Voltage (V)

QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000.00

10000 OPERATION IN THIS AREA LIMITED BY R DS(on)

100.00

T J = 175C

10.00 T J = 25C 1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V)

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

1000

100 100sec 10 Tc = 25C Tj = 175C Single Pulse 1 1 10 100 1000 VDS , Drain-toSource Voltage (V) 1msec 10msec

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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AUIRF3808

140 120

VDS VGS RG

RD

D.U.T.
+

ID, Drain Current (A)

100 80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (C)

VDS 90%

-VDD

10V
Pulse Width s Duty Factor

Fig 10a. Switching Time Test Circuit

10% VGS

Fig 9. Maximum Drain Current Vs. Case Temperature

td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

(Z thJC )

D = 0.50

0.1

0.20 0.10

Thermal Response

0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE)

P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C 1

J = P DM x Z thJC

0.001 0.00001

0.0001

0.001

0.01

0.1

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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AUIRF3808

15V

800

VDS

DRIVER
640

TOP BOTTOM

ID 34A 58A 82A

RG
20V

D.U.T
IAS tp

+ - VDD

EAS , Single Pulse Avalanche Energy (mJ)

480

0.01

320

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS tp

160

0 25 50 75 100 125 150

Starting Tj, Junction Temperature

( C)

I AS

Fig 12b. Unclamped Inductive Waveforms

QG

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

10 V
QGS VG
VGS(th) Gate threshold Voltage (V)

QGD
3.5

3.0

Charge

2.5

ID = 250A

Fig 13a. Basic Gate Charge Waveform

Current Regulator Same Type as D.U.T.

2.0

50K 12V .2F .3F

1.5

D.U.T. VGS
3mA

+ V - DS

1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200

T J , Temperature ( C )

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 14. Threshold Voltage Vs. Temperature

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AUIRF3808

1000

Duty Cycle = Single Pulse

Avalanche Current (A)

100

0.01

Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses

0.05
10

0.10

1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

500

EAR , Avalanche Energy (mJ)

400

TOP Single Pulse BOTTOM 10% Duty Cycle ID = 140A

300

200

100

0 25 50 75 100 125 150

Starting T J , Junction Temperature (C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = t av f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC Iav = 2DT/ [1.3BVZth] EAS (AR) = PD (ave)tav

Fig 16. Maximum Avalanche Energy Vs. Temperature

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AUIRF3808
Peak Diode Recovery dv/dt Test Circuit

D.U.T

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG

dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ -

VDD

Driver Gate Drive P.W. Period D=

P.W. Period

* VGS=10V

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices

Fig 17. For N-channel HEXFET power MOSFETs

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AUIRF3808
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

Part Number

AUIRF3808

IR Logo

YWWA
XX or XX

Date Code Y= Year WW= Work Week A= Automotive, Lead Free

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRF3808

Ordering Information
Base part number AUIRF3808 Package Type Standard Pack Form Tube Quantity 50 Complete Part Number

TO-220

AUIRF3808

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AUIRF3808
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IRs Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105

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