UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

FEATURES
*High Power Dissipation: Pc=1.5W(Ta=25) *Complementary to 2SB1151

TO-126C

1:EMITTER

2:COLLECTOR

3:BASE

ABSOLUTE MAXIMUM RATINGS (Ta=25)

PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25 Tc=25 DC Pulse (Note 1)

SYMBOL
VCBO VCEO VEBO Ic Icp IB Pc Tj Tstg

RATING
60 60 7 5 8 1 1.5 20 150 -55 ~ +150

UNIT
V V V A A W

Junction Temperature Storage Temperature Range Note 1 :PW10ms,Duty Cycle50%

ELECTRICAL CHARACTERISTICS(Ta=25,unless otherwise specified )

CHARACTERISTIC
Collector Cut-off Current Emitter Cut-off Current DC Current Gain

SYMBOL
ICBO IEBO hFE1 hFE2* hFE3 VCE(sat)* VBE(sat)*

TEST CONDITIONS
VCB=50V,IE=0 VEB=7V,Ic=0 VCE=1V,Ic=0.1A VCE=1V,Ic=2A VCE=2V,Ic=5A Ic=2A,IB=0.2A Ic=2A,IB=0.2A

MIN

TYP. MAX. UNIT

10 10 A A

60

160
50 0.1 0.9

400
0.3 1.2 V V

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

UTC

UNISONIC TECHNOLOGIES

CO. LTD

QW-R217-003,A

UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR

CHARACTERISTIC
Switching Time Turn On Time Storage Time Fall Time

SYMBOL
Ton Tstg Tf
IB1

TEST CONDITIONS
20sec IB1 INPUT 5 IB2 IB1=-IB2=0.2A DUTY CYCLE1% IB2 Vcc=10V OUTPUT

MIN

TYP. MAX. UNIT

0.2 1.1 0.2 1 2.5 1 s

* : Pulse test: PW50S, Duty Cycle2% Pulse

CLASSIFICATION OF hFE2
RANK RANGE O 160-320 Y 200-400

ELECTRICAL CHARACTERISTICS CURVES

Pc - Ta 25
POWER DISSIPATION Pc(W)
1

dT - Tc 160 140
Ic DERATIN dT(%)

20 15 10 5 0

1 2

Tc=Ta INFINITE HEAT SINK NO HEAT SINK

120 100 80 60 40 20
S/b Lim ited Di ss ipa ti o nL im ite d

50

100

150

200

25

50

75

100

125

150

175 200

AMBIENT TEMPERATURE Ta()

CASE TEMPERATURE Tc() REVERSE BIAS SAFE OPERATING AREA 10

COLLECTOR CURRENT Ic(A)

SAFE OPERATING AREA 10 COLLECTOR CURRENT Ic(A) 5 3

Ic(Pulse)MAX. Ic(DC)MAX.
s* 20 Di 0m ss s ip at io n Lim ite d 10 m 2m s*

8 6 4 2 0

1 0.5 0.3

VCEO (MAX.)

0.1

*SINGLE NONREPETIVE PULSE Ta=25 CURVES MUST BE DERATED LINEARLY WITH INCREASE INTEMPERATURE

s/ b

Li m ite d

10

30

50

100

20

VCEO (SUS).

40

60

80

100

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR-EMITTER VOLTAGE VCE(V)

UTC

UNISONIC TECHNOLOGIES

CO. LTD

QW-R217-003,A

UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR

Ic - VCE 10
COLLECTOR CURRENT Ic(A)
A 15 0m 10 0m A

hFE - Ic 1k 500 300 100 50 30 10 5 3 1 0.01 0.03 0.1 0.3 1 3 10

IB=80mA

IB=60m

DC CURRENT GAIN hFE

IB =

IB =

8 6
200 mA

VCE=2V VCE=1V

A IB=40m

A IB=30m

IB=

4 2 0

IB=20mA

IB=10mA

IB=0mA

0.4

0.8

1.2

1.6

2.0

COLLECTOR-EMITTER VOLTAGE VCE(V)

COLLECTOR CURRENT Ic(A)

STATURATION VOLTAGE VBE(sat),VCE(sat) (V)

10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01

VBE(sat),VCE(sat) - Ic Ic/IB=10 VBE(sat)

VCE(sat)

0.03

0.1

0.3

10

COLLECTOR CURRENT Ic(A)

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

UTC

UNISONIC TECHNOLOGIES

CO. LTD

QW-R217-003,A