-1-

-2-








































Lu :

Mi sinh vin hy t tr li cu hi v lm bi tp trc tip vo ti liu ny.
Khng c sao chp bi gii ca ngi khc.

i vi phn cu hi trc nghim, SV lm bi chn mt phng n thch hp
nht trong mi cu hi, bng cch khoanh trn hoc nh du vo u dng
phng n c chn, v gii thch ngn gn vo phn trng bn cnh hoc
pha di mi cu hi. i vi cc bi tp, hy ghi li gii vo ngay phn
trng tng ng mi bi tp.

Ti liu tham kho:
Bi ging Cu kin in t. 2001 [ D Quang Bnh ].
Electronic Devices. 2012 [Thomas L Floyd].
Fundamentals of Linear Electronics Integrated and Dicrete, 1998 [James
Cox ].

Lin h khi cn: Thy Bnh, 0905894666, hoc: binhduquang@gmail.com

Thi hn hon thnh v np bi tp: (vo bui thi . . . . . . . . . . . )
ti bm: K thut in t, khoa in t-Vin thng, Trng i hc Bch
Khoa, 54 Nguyn Lng Bng, Q. Lin Chiu, Tp Nng.
(Khng chp nhn s chm tr).



-3-
TM TT NI DUNG V VT LIU BN DN & DIODE

1-1. Tun theo m hnh c hc c in Bohr, nguyn t c xem nh c cu trc kiu-h hnh
tinh vi cc qu o in t trn cc khong cch khc nhau xung quanh nhn trung tm.
Tun theo m hnh c hc lng t, cc in t khng tn ti cc qu o trn chnh xc
nh cc ht c bn theo m hnh Bohr. Cc in t c th l sng hoc ht v nh v chnh
xc ti thi im bt k l khng r rng.
Nhn ca nguyn t bao gm cc proton v cc neutron. Proton c in tch dng v neutron
khng mang in tch. S lng cc proton l s nguyn t lng ca nguyn t.
Cc in t c in tch m v trn qu o xung quanh nhn ti cc khong cch ty thuc
vo mc nng lng ca cc in t. Nguyn t c cc di nng lng gin on c gi l
cc lp m trong l qu o ca in t. Cu trc nguyn t cho php s lng in t
ln nht trong mi lp no . trng thi t nhin ca n, tt c cc in t u trung ha
v in tch do cc nguyn t c s lng proton v electron bng nhau.
Lp hay di ngoi cng ca nguyn t c gi l di ha tr, nn cc in t c trn qu o
di ny c gi l cc in t ha tr. Cc in t ha tr c mc nng lng cao nht
trong tt c cc mc nng lng trong nguyn t. Nu mt in t ha tr nhn nng
lng t mt ngun nng lng bn ngoi chng hn nhit nng, th in t c th nhy ra
khi di ha tr v ri xa khi nguyn t ca n.
1-2. Vt liu cch in c rt t cc in t t do nn khng c dng in tt c cc iu kin
thng thng.
Cc vt liu dn in c s lng ln cc in t t do nn dn dng in rt tt.
Cc vt liu bn dn c dn in trong khong gia cc vt liu dn in v cch in.
Cc nguyn t ca cht bn dn c bn in t ha tr. Silicon l vt liu bn dn c s
dng ph bin nht.
Cc nguyn t ca cht bn dn lin kt vi nhau theo m hnh i xng to thnh vt liu
rn c gi l tinh th. Cc lin kt gi tinh th vi nhau c gi l cc lin kt ng
ha tr.
1-3. in t ha tr thot khi nh hng nguyn t gc c gi l in t dn hay in t t do.
Cc in t t do c nng lng cao hn so vi cc in t di ha tr, nn t do di
chuyn trong khp vt liu.
Khi mt in t thot khi nh hng ca nhn tr nn t do, in t s li mt l trng
trong di ha tr tc l to ra mt cp in t-l trng. Cc cp in t-l trng l c to ra
do nhit nng bi v in t nhn nng lng nhit t ngoi thot khi nguyn t
ca n.
Mt in t t do s mt nng lng cui cng ri tr li vo mt l trng. iu ny c
gi l s ti hp. Cc cp in t-l trng c to ra lin tc do nhit nn lun lun c cc
in t t do trong vt liu.
Khi t mt in p ngang qua mu vt liu bn dn, cc in t t do c to ra do nhit di
chuyn v pha u dng v to thnh dng in. y l mt loi dng in c gi l
dng in do in t.
Mt loi dng in khc l dng in do l trng. Dng in ny xut hin khi cc in t
ha tr di chuyn khi l trng to nn l trng, trong thc t s di chuyn ca cc l trng
theo chiu ngc li.
1-4. Vt liu bn dn tp dng-n c to ra bng cch b sung cc nguyn t tp cht c nm
in t ha tr. Cc tp cht l cc nguyn t ha tr nm. Bn dn tp dng-p c to ra
bng cch b sung cc nguyn t tp cht ch c ba in t ha tr. Cc tp cht l cc
nguyn t ha tr ba.
Qu trnh b sung cc tp cht ha tr nm hoc ha tr ba vo mt cht bn dn c gi l
pha tp.
Cc ht ti in a s trong vt liu bn dn tp dng-n l cc in t t do c c bng qu
trnh pha tp, v cc ht ti in thiu s l cc l trng c to ra do nhit pht sinh cc cp
in t-l trng. Cc ht ti in a s trong vt liu bn dn tp dng-p l cc l trng c
-4-
c bi qu trnh pha tp, cn cc ht ti in thiu s l cc in t t do c to ra do
nhit pht sinh cc cp in t-l trng.
1-5. Tip gip pn c hnh thnh khi mt phn vt liu c pha tp dng-n v mt phn vt liu
c pha tp dng-p. Vng ngho s to thnh bt u ti tip gip tc l khng c cc ht
ti in a s. Vng ngho c hnh thnh bi s i-on ha.
i vi tip gip silicon th chn in hnh l 0,7 V v i vi diode germanium l 0,3 V.
1-6. Dng in chy qua diode ch khi diode c phn cc thun. Xt theo l tng, khng c
dng in chy qua diode khi khng phn cc hoc phn cc ngc cho diode. Thc t, c
dng in rt nh khi diode c phn cc ngc do cc ht ti in thiu s c to ra bi
nhit nng, nhng mc dng ngc rt nh nn thng c th b qua.
S nh thng thc l xy ra khi diode c phn cc ngc nu in p phn cc bng hoc
vt qu in p nh thng.
Diode s dn in khi c phn cc-thun v s ngng dn khi c phn cc-ngc.
in p nh thng ngc ca mt diode thng ln hn 50 V.
1-7. c tuyn V-I th hin dng chy qua diode ph thuc vo in p st trn diode.
in tr ca diode khi c phn cc-thun c gi l in tr ng hay in tr ac.
Dng ngc chy qua diode s tng rt nhanh ti mc in p nh thng ngc.
nh thng ngc cn phi trnh i vi phn ln diode.
1-8. M hnh l tng xem diode nh mt chuyn mch kn khi phn cc thun v nh mt h
mch khi phn cc ngc.
M hnh thc t xem diode nh mt chuyn mch mc ni tip vi ngun th chn.
M hnh y bao gm in tr thun ng mc ni tip vi m hnh thc t khi phn cc
thun v in tr ngc mc song song vi chuyn mch h khi phn cc ngc.
1-9. Ngun cung cp dc in hnh gm bin p, mch chnh lu bng diode, mch lc v b n
nh in p.
Diode n trong mch chnh lu bn k khi c phn cc-thun s dn trong khong 180
ca chu k tn hiu vo.
Tn s ca tn hiu ra mch chnh lu bn k bng tn s tn hiu vo.
in p ngc nh (PIV) l mc in p ln nht ngang qua diode khi phn cc ngc.
1-10. Mi diode trong mch chnh lu ton k khi c phn cc-thun s dn trong khong 180
ca chu k tn hiu vo
Tn s ca tn hiu ra mch chnh lu ton k l gp hai ln tn s tn hiu vo.
Hai kiu mch chnh lu ton k c bn l mch cu v mch cun dy im gia.
in p ra nh ca mch chnh lu ton k im gia xp x bng mt na in p th cp
nh ton b tr st p ca mt diode.
PIV ca mi diode trong mch chnh lu ton k im gia l gp hai ln in p ra nh
cng vi mc st p trn mt diode.
in p ra nh ca mch chnh lu cu bng in p th cp nh ton b tr st p trn hai
diode.
PIV ca mi diode trong mch chnh lu cu xp x bng mt na in p i vi cu hnh
im gia tng ng v bng in p ra nh cng vi mc st p trn mt diode.
1-11. B lc u vo bng t s cung cp mc in p ra dc xp x bng mc nh ca in p p
vo c chnh lu.
in p gn c pht sinh do s np v x ca t lc.
Lc tt hn khi mc in p gn nh hn.
S n nh in p ra trn mt khong in p vo c gi l n nh u vo hay n nh
ngun cung cp.
S n nh in p ra trn mt khong dng ti c gi l n nh ti.
1-12. B xn hay mch hn bng diode ch s ct in p cao hn hay thp hn cc mc c
quy nh.
B ghim bng diode b sung mc dc i vi in p ac.
1-13. Cc b nhn p c s dng trong cc ng dng in p-cao, dng-thp chng hn nh dng
gia tc chm tia in t trong ng tia (CRT) v dng gia tc ht c bn.
nhn p s dng hng lot cc tng diode-t in.
in p t vo c th c nhn i, nhn ba, hoc nhn 4.
-5-
1-14. Trang s liu (datasheet) cho bit thng tin chnh v cc thng s v cc c tuyn ca mt
cu kin in t.
Diode cn phi lun lun lm vic di cc thng s ln nht xc thc c quy nh trang
s liu.
1.15. Nhiu DMM cho chc nng o th diode.
DMM hin th st p ca diode khi diode lm vic ng phn cc thun.
Phn ln cc DMM ch th OL khi diode h mch.
X l s c l p dng suy xt hp l kt hp vi kin thc y v mch hoc h thng
nhn dng v sa cha sai hng.
X l s c l qu trnh ba-bc gm phn tch, c lp v o.
Phn tch li l c lp h hng cho mt mch c th hay mt phn ca mch.
1.16. Diode n p [zener] hot ng vng nh thng ngc.
C hai c ch nh thng diode n p: l nh thng thc l v nh thng zener.
Khi 6, 3 V
Z
V < nh thng zener chim u th.
Khi 6, 3 V
Z
V > nh thng thc chim u th.
Diode n p s duy tr in p gn nh khng i trn hai in cc ca n trong khong dng
in zener quy nh.
Diode n p c sn nhiu cp in p t di 1 V n trn 250 V.
1.17. Diode n p c s dng lm cc ngun in p chun, cc n p, v cc b hn ch.
1.18. Diode bin dung [varactor] hot ng nh mt t thay i trng thi phn cc-ngc.
in dung ca varactor bin thin t l nghch vi in p phn cc-ngc.
Diode n nh dng s duy tr dng thun ca n ti gi tr khng i c quy nh.
1.19. Diode pht quang [LED] s pht ra nh sng khi c phn cc-thun.
Cc LED c sn pht ra hng ngoi hoc nh sng nhn thy.
Cc LED cng sng-cao c s dng trong cc b hin th mn hnh-ln, n giao
thng, n chiu sng -t v n chiu sng trong nh.
LED hu c [OLED] s dng hai hay ba lp vt liu hu c to ra nh sng.
Cc im lng t l cc cu kin bn dn pht ra nh sng khi c cung cp nng lng t
ngun bn ngoi.
Photodiode biu hin s tng ln v dng ngc theo cng chiu sng.
1.20. Diode Schottky c tip gip kim loi-bn dn. Diode Schottky c s dng trong cc ng
dng tc chuyn mch-cao.
Diode tunnel c s dng trong cc mch dao ng.
Diode pin c vng bn dn tp-p, vng bn dn tp-n, v vng bn dn nguyn cht (i) nn s
biu hin c tnh ca in tr bin thin khi c phn cc-thun v in dung khng i
khi c phn cc-ngc.
Diode laser tng t LED ngoi tr diode laser pht ra nh sng kt hp (bc sng n) khi
dng thun vt qu gi tr ngng.
















-6-
1-1. S lng in t ln nht trong mt lp bt k:
2
2
e
N n =
1-2. Dng thun theo m hnh l tng ca diode:
BIAS
F
LIMIT
V
I
R
=
1-3. Dng thun theo m hnh thc t ca diode:
BIAS F
F
LIMIT
V V
I
R

=
1-4. Gi tr trung bnh ca in p ra mch chnh lu bn k:
AVG
p
V
V
t
=
1-5. in p ra nh ca chnh lu bn k (silicon):
( ) ( )
- 0, 7 V
p out p in
V V =
1-6. in p ngc nh mch chnh lu bn k:
( )
PIV
p in
V =
1-7. Gi tr trung bnh ca in p chnh lu ton k:
AVG
2
p
V
V
t
=
1-8. in p ra ca chnh lu ton k im gia: - 0, 7 V
2
sec
out
V
V =
1-9. in p ngc nh mch chnh lu ton k im gia:
( )
PIV 2 + 0, 7 V
p out
V =
1-10. in p ra ca chnh lu cu ton k:
( ) ( )
- 1, 4 V
p out p sec
V V =
1-11. in p ngc nh mch chnh lu cu ton k:
( )
PIV + 0, 7 V
p out
V =
1-12. H s gn:
( )
DC
r pp
V
r
V
=
1-13. in p gn nh-nh khi c t lc u vo:
( ) ( )
1
r pp p rect
L
V V
fR C
| |
~
|
\ .

1-14. in p ra DC khi c t lc u vo:
DC ( )
1
1
2
p rect
L
V V
fR C
| |
=
|
\ .

1-15. n nh ngun:
OUT
IN
Line regulation 100%
V
V
| | A
=
|
A
\ .

1-16. n nh ti:
NL FL
FL
Load regulation 100%
V V
V
| |
=
|
\ .

1-17. Tr khng ca Zener:
Z
Z
Z
V
Z
I
A
=
A

1-18. thay i ca
Z
V khi TC tnh theo %/C:
Z Z
Z V TC T A = A
1-19. thay i ca
Z
V khi TC tnh theo mV/C:
Z
Z TC T A = A















-7-
Cu hi v vt liu bn dn v diode

1. Mi nguyn t bit u c
(a) kiu cc nguyn t ng nht; (b) s lng cc nguyn t nh nhau;
(c) kiu nguyn t duy nht; (d) nhiu kiu nguyn t khc nhau.


2. Mt nguyn t bao gm
(a) mt nhn v ch mt in t; (b) mt nhn v mt hoc nhiu in t;
(c) cc proton, cc in t, v cc neutron; (d) c (b) v (c).


3. Nhn ca mt nguyn t c to thnh bi
(a) cc proton v cc neutron; (b) cc in t;
(c) cc in t v cc proton; (d) cc in t v cc neutron.


4. in t ha tr c
(a) qu o gn nhn nht; (b) qu o xa nhn nht;
(c) cc qu o khc nhau xung quanh nhn; (d) khng lin quan vi nguyn t ring bit.


5. I-on dng c to thnh khi
(a) mt in t ha tr thot ra xa khi nguyn t;
(b) c nhiu l trng hn so vi in t qu o ngoi cng;
(c) hai nguyn t lin kt vi nhau;
(d) mt nguyn t nhn thm mt in t ha tr.


6. Vt liu bn dn c s dng ph bin nht trong cc cu kin in t l
(a) germanium; (b) carbon; (c) copper; (d) silic.


7. S khc nhau gia cht cch in v cht bn dn l
(a) khe nng lng gia di ha tr v di dn rng hn; (b) s lng in t t do;
(c) cu trc nguyn t; (d) c (a), (b), v (c).


8. Di nng lng m trong cc in t t do tn ti l
(a) di th nht; (b) di th hai; (c) di dn; (d) di ha tr.


9. Trong tinh th bn dn, cc nguyn t c lin kt vi nhau do
(a) s tng tc ca cc in t ha tr; (b) cc lc hp dn;
(c) cc lin kt ng ha tr; (d) c (a), (b), v (c).


10. S nguyn t lng ca silicon l
(a) 8; (b) 2; (c) 4; (d) 14.


11. S nguyn t lng ca germanium l
(a) 8; (b) 2; (c) 4; (d) 32.


12. Lp ha tr mt nguyn t silicon c s th t l
(a) 0; (b) 1; (c) 2; (d) 3.

-8-
13. Mi nguyn t trong tinh th silicon c
(a) bn in t ha tr; (b) bn in t trong di dn;
(c) tm in t ha tr, 4 in t ca chnh nguyn t v 4 in t c gp chung;
(d) khng c cc in t ha tr do tt c in t c gp chung vi cc nguyn t khc.


14. Cc cp in t - l trng c to thnh bi
(a) s ti hp; (b) nng lng nhit; (c) s ion ha; (d) s pha tp.


15. C s ti hp khi
(a) mt in t ri vo mt l trng; (b) mt ion dng v mt ion m lin kt vi nhau;
(c) in t di ha tr tr thnh in t di dn; (d) mt tinh th c hnh thnh.


16. Dng in trong cc cht bn dn c to ra bi
(a) ch do cc in t; (b) ch do cc l trng;
(c) cc i-on m; (d) c cc in t v cc l trng.


17. Trong cht bn dn thun (c bn)
(a) khng c cc in t t do; (b) cc in t t do c to ra do nhit; (c) ch c cc l trng;
(d) c bao nhiu in t s c by nhiu l trng; (e) gm c (b) v (d).



18. Qu trnh b sung tp cht vo cht bn dn thun gi l
(a) s pha tp; (b) s ti hp; (c) s bin i nguyn t; (d) s ion ha.


19. Tp cht ha tr 3 c b sung vo silicon to thnh
(a) germanium; (b) cht bn dn tp dng-p; (c) cht bn dn tp dng-n; (d) vng ngho.



20. Chc nng ca tp cht ha tr 5 l
(a) lm gim dn in ca silicon; (b) tng s lng l trng;
(c) lm tng s lng cc in t t do; (d) to ra cc ht ti in thiu s.


21. Cc ht ti in a s trong bn dn tp dng-n l
(a) cc l trng; (b) cc in t ha tr; (c) cc in t trong di dn; (d) cc proton.


22. Cc l trng trong bn dn tp dng-n l
(a) ht ti in thiu s c to ra do nhit;(b) ht ti in thiu s c to ra do pha tp;
(c) cc ht ti in a s c to ra do nhit;(d) cc ht ti in a s c to ra do pha tp.


23. Tip gip pn c to thnh do
(a) s ti hp ca cc in t v l trng; (b) s i-on ha;
(c) bin gii ca vt liu dng-p v dng-n; (d) s va chm ca mt proton v mt neutron.

-9-
24. Vng ngho c to ra do
(a) s i-on ha; (b) s khuych tn; (c) s ti hp; (d) gm c (a), (b), v (c).


25. Vng ngho gm
(a) vng khng c g c ngoi cc ht ti in thiu s; (b) cc i-on dng v m;
(c) khng c cc ht ti in a s; (d) c (b) v (c).


26. Thut ng phn cc [bias] c ngha l
(a) t s ca ht ti in a s i vi ht ti in thiu s;
(b) mc dng in chy qua diode;
(c) mc in p dc t vo iu khin s hot ng ca mt cu kin;
(d) ngoi cc phng n trn.

27. phn cc thun mt diode
(a) in p ngoi t vo l dng ti anode v m ti cathode;
(b) in p ngoi t vo l m ti anode v dng ti cathode;
(c) in p ngoi t vo l dng ti vng p v m ti vng n;
(d) c (a) v (c).

28. Khi mt diode c phn cc thun,
(a) dng in duy nht l dng l trng; (b) dng in duy nht l dng in t;
(c) dng in duy nht l c to ra do cc ht ti in a s;
(d) dng in c to ra do c cc l trng v cc in t.


29. Mc d dng in b ngng khi phn cc ngc,
(a) nhng c mt mc dng in no do cc ht ti in a s;
(b) nhng c mt mc dng in rt nh do cc ht ti in thiu s;
(c) nhng c dng do nh thng thc.

30. i vi mt diode silicon, tr s ca in p phn cc thun in hnh
(a) cn phi ln hn 0,3V; (b) cn phi ln hn 0,7V;
(c) ty thuc vo rng ca vng ngho; (d) ph thuc vo nng ca ht ti in a s.


31. Khi c phn cc thun, diode s
(a) ngng dn; (b) dn dng; (c) c in tr cao; (d) st gim mc in p ln.


32. Mt diode thng lm vic
(a) vng nh thng ngc; (b) vng phn cc-thun;
(c) vng phn cc-ngc; (d) hoc (b) hoc (c).


33. in tr ng c th quan trng khi diode
(a) c phn cc ngc; (b) c phn cc-thun;
(c) vng nh thng-ngc; (d) cha c phn cc.



-10-
34. c tuyn I-V ca diode th hin
(a) in p ngang qua diode theo mc dng cho;
(b) mc dng in theo mc in p phn cc cho;
(c) tiu tn cng sut; (d) ngoi cc phng n trn.


35. Xt mt cch l tng, mt diode c th c tng ng vi mt
(a) ngun in p; (b) in tr; (c) chuyn mch; (d) tt c cc phn t trn.


36. M hnh diode thc t l
(a) mc th ro c a vo tnh ton; (b) gi tr in tr ng c a vo tnh ton;
(c) ngoi hai trng hp (a) v (b); (d) c (a) v (b).


37. Trong m hnh diode y ,
(a) mc th ro c a vo tnh ton; (b) tr s in tr ng thun c a vo tnh ton;
(c) tr s in tr ngc c a vo tnh ton; (d) tt c cc thng s trn.


38. Gi tr trung bnh ca in p chnh lu bn k vi tr s nh 200 V l
(a) 63,7 V; (b) 127,2 V; (c) 141 V; (d) 0 V.


39. Khi t in p sinusoidal 60 Hz vo u vo ca mch chnh lu bn k, tn s tn hiu ra l
(a) 120 Hz; (b) 30 Hz; (c) 60 Hz; (d) 0 Hz.



40. Gi tr nh ca in p ti u vo ca mch chnh lu bn k l 10 V. Gi tr nh gn ng ca
in p ti u ra l
(a) 10 V; (b) 3,18 V; (c) 10,7 V; (d) 9,3 V.



41. i vi mch cu hi 40, diode cn phi c kh nng chu in p ngc l
(a) 10 V; (b) 5 V; (c) 20V; (d) 3,18 V.



42. Gi tr trung bnh ca in p c chnh lu ton k vi tr s nh 75 V l
(a) 53 V; (b) 47,8 V; (c) 37,5 V; (d) 23,9 V.



43. Khi t in p sinusoidal 60 Hz vo u vo ca mch chnh lu ton k, tn s tn hiu ra l
(a) 120 Hz; (b) 60 Hz; (c) 240 Hz; (d) 0 Hz.


44. in p th cp ton b mch chnh lu ton k im-gia l 125 V rms. B qua st p ca
diode, in p ra hiu dng (V rms) l
(a) 125 V; (b) 177 V; (c) 100 V; (d) 62,5 V.



-11-
45. Khi in p ra nh l 100 V, tr s in p ngc nh (PIV) cn phi c cho mi diode trong
mch chnh lu ton k im gia l (b qua st p ca diode)
(a) 100 V; (b) 200 V; (c) 141 V; (d) 50 V.


46. Khi in p ra hiu dng (rms) ca mch chnh lu cu ton k l 20 V, in p ngc nh
ngang qua cc diode l (b qua st p trn diode)
(a) 20 V; (b) 40 V; (c) 28,3 V; (d) 56,6 V.


47. in p ra dc l tng ca mch lc u vo bng t s bng vi
(a) gi tr nh ca in p c chnh lu;
(b) gi tr trung bnh ca in p c chnh lu;
(c) gi tr hiu dng ca in p c chnh lu.


48. Mt b lc ngun cung cp cho in p ra c gn l 100 mV nh-nh v gi tr dc l 20 V?.
H s gn l
(a) 0,05; (b) 0,005; (c) 0,00005; (d) 0,02.


49. in p c chnh lu ton k nh l 60 V t vo mch lc u vo bng t. Nu f = 120
Hz; =10 k
L
R , v =10 F C , in p gn l
(a) 0,6 V; (b) 6 mV; (c) 5,0 V; (d) 2,88 V.


50. Nu gim in tr ti ca b chnh lu ton k c lc bng t, th in p gn
(a) s tng ln; (b) s gim xung; (c) khng nh hng; (d) c tn s khc.


51. n nh theo in p ngun c xc nh bng
(a) dng ti; (b) dng zener v dng ti;
(c) thay i in tr ti v in p ra; (d) thay i in p ra v in p vo.


52. n nh theo ti c xc nh bng
(a) cc thay i dng ti v in p vo; (b) cc thay i dng ti v in p ra;
(c) cc thay i in tr ti v in p vo;(d) cc thay i dng zener v dng ti.


53. t in p sinusoidal 10 Vnh-nh vo mch diode silicon v in tr mc ni tip. Tr s in
p ln nht ngang qua diode l
(a) 9,3 V; (b) 5 V; (c) 0,7 V; (d) 4,3 V.


54. Trong mch xn c phn cc, in p phn cc l 5 V v in p vo l dng sin 10 V nh. Nu
cc tnh dng ca in p phn cc c ni vi cathode ca diode, th in p ti anode l
(a) 10 V; (b) 5 V; (c) 5,7 V; (d) 0,7 V.


55. Trong mch ghim p dng, in p t vo u vo l dng sin 120 V rms. Gi tr ca in p dc
u ra l
(a) 119,3 V; (b) 169 V; (c) 60 V; (d) 75,6 V.

-12-
56. in p u vo ca b nhn i in p l 120 V rms. Gi tr gn ng ca in p ra nh-nh
l
(a) 240 V; (b) 60 V; (c) 167 V; (d) 339 V.


57. Nu in p u vo ca b nhn ba in p c gi tr hiu dng l 12 V, Gi tr in p ra dc gn
ng l
(a) 36 V; (b) 50,9 V; (c) 33,9 V; (d) 32,4 V.


58. Khi mt diode silicon hot ng ng phn cc thun, DMM chc nng o th diode s ch
th
(a) 0 V; (b) OL; (c) xp x 0,7 V; (d) xp x 0,3 V.


59. Khi mt diode silicon b h mch, DMM thng thng s ch th
(a) 0 V; (b) OL; (c) xp x 0,7 V; (d) xp x 0,3 V.


60. Trong mt mch chnh lu, nu cun dy th cp ca bin p h mch, th in p ra l
(a) 0 V; (b) 120 V; (c) thp hn nh mc; (d) khng nh hng.


61. Nu mt trong cc diode trong mch chnh lu cu ton k b h mch, th in p ra l
(a) 0 V; (b) mt phn t bin ca in p vo;
(c) bng in p chnh lu bn k; (d) in p 120 Hz.



62. Khi kim tra mt mch chnh lu cu ton k 60 Hz cho thy tn hiu ra c gn 60 Hz,
(a) mch hot ng bnh thng; (b) c mt diode b h mch;
(c) cun th cp ca bin p b ngn mch; (d) t lc b r.


63. Khi t voltmeter ngang qua diode c phn cc thun, th voltmeter s ch th mc in p xp
x bng vi
(a) mc in p ca ngun pin phn cc; (b) 0V;
(c) th ro ca diode; (d) in p ca ton b mch.


64. Mt diode silicon mc ni tip vi in tr 1,0kO v mt ngun pin 5V. Nu anode c mc
vi cc dng ca ngun pin, in p cathode so vi u m ca ngun pin l
(a) 0,7V; (b) 0,3V; (c) 5,7V; (d) 4,3V.


65. u que o dng ca ng h o in tr [ohmmeter] c kt ni vi anode ca diode cn u
que m l kt ni vi cathode. Diode l
(a) c phn cc ngc; (b) h mch; (c); c phn cc thun
(d) b hng; (e) gm c (b) v (d).


66. Cathode ca diode zener mc trong b n nh in p thng l
(a) dng hn so vi anode; (b) m hn so vi anode;
(c) mc in p + 0,7V; (d) c ni t.
-13-
67. Nu mt diode zener c in p zener l 3,6V th diode zener s lm vic
(a) vng nh thng c n inh; (b) vng nh thng zener;
(c) vng dn thun; (d) vng nh thng thc.


68. Mt diode zener 12V, thay i dng zener 10mA s to ra thay i in p zener l
0,1V. Tr khng ca zener tng ng vi khong dng trn l
(a) 1O; (b) 100O; (c) 10O; (d) 0,1O.


69. S liu ca mt diode zener cho l V
Z
= 10V o ti mc dng I
ZT
= 500mA. Z
Z
tng ng l
(a) 50O; (b) 20O; (c) 10O; (d) cha bit.


70. Trng thi khng-ti c ngha l
(a) ti c in tr v cng; (b) ti c in tr bng khng;
(c) cc u ra l h mch; (d) gm c (a) v (c).


71. Diode bin dung biu hin
(a) in dung c th thay i ty thuc vo in p ngc;
(b) in tr c th thay i ty thuc vo in p ngc;
(c) in dung c th thay i ty thuc vo in p thun;
(d) in dung khng i trong khong in p ngc.

72. Diode pht quang - LED
(a) s pht sng khi c phn cc ngc; (b) s nhy cm vi nh sng khi phn cc ngc;
(c) s pht sng khi c phn cc thun; (d) hot ng nh mt bin tr.

73. LED hng ngoi so vi LED thy c l
(a) to ra nh sng c bc sng ngn hn; (b) to ra nh sng tt c cc bc sng;
(c) to ra ch mt mu ca nh sng; (d) to ra nh sng c bc sng di hn.


74. So vi cc n si t, LED cng sng-cao l
(a) sng hn; (b) bn hn; (c) s dng ngun thp hn;(d) tt c cc c tnh trn.


75. OLED khc vi LED thng thng c tnh l OLED
(a) khng cn in p phn cc; (b) c cc lp vt liu hu c thay cho tip gip pn;
(c) c th thc hin c khi s dng qu trnh in phun; (d) c (b) v (c).


76. LED hng ngoi c ghp quang vi photodiode. Khi LED tt, th ch th trn ng h o dng
mc ni tip vi photodiode c phn cc-ngc s l
(a) khng thay i; (b) gim xung; (c) tng ln; (d) dao ng .


77. in tr ni ca quang diode - photodiode
(a) s tng ln theo cng nh sng khi c phn cc-ngc;
(b) s gim xung theo cng nh sng khi c phn cc-ngc;
(c) s tng ln theo cng nh sng khi c phn cc-thun;
(d) s gim xung theo cng nh sng khi c phn cc-thun.

-14-
78. Diode laser s to ra
(a) nh sng khng kt hp; (b) nh sng kt hp;
(c) nh sng n sc; (d) c (b) v (c).


79. Diode c c tnh in tr m l
(a) diode Schottky; (b) diode tunnel; (c) diode laser; (d) diode ht ti nng [hot-carrier diode].


80. cho mt h thng hot ng ng chc nng, th cc loi mch khc nhau to nn h thng
cn phi
(a) c phn cc ng; (b) c kt ni ng; (c) c giao tip ng;
(d) tt c cc phng n trn; (e) gm c (a) v (b).









































-15-
BI TP

BI TP C BN

Mc 1-1 Cu trc nguyn t

1. Nu s nguyn t ca mt nguyn t trung ha l 6, th c bao nhiu in t c trong nguyn t?
proton l bao nhiu?.


2. S lng in t ln nht l bao nhiu c th c lp th 3 ca mt nguyn t?


Mc 1-2 Vt liu s dng trong cu kin in t

3. Vi mi gin nng lng hnh 1.40, hy xc nh loi vt liu da trn cc so snh tng
i.













4. Mt nguyn t c 4 in t ha tr. Kiu nguyn t l thuc loi vt liu no?


5. Trong tinh th silicon, mu nguyn t n thc hin bao nhiu lin kt ng ha tr?


Mc 1-3 Dng in trong cc cht bn dn

6. iu g xy ra khi gia tng nhit vo silicon?

7. Tn gi hai vng nng lng m trong dng in s c to ra trong cht bn dn?


Mc 1-4 Cc cht bn dn tp dng-N v dng-P

8. Hy m t qu trnh pha tp v gii thch qu trnh pha tp bin i cu trc nguyn t ca silicon
nh th no?




-16-
9. Nguyn t antimony c bao nhiu in t ha tr, c th s dng lm g trong ch to cht bn
dn? Nguyn t boron c bao nhiu in t ha tr, c th s dng lm g trong ch to cht
bn dn?



Mc 1-5 Tip gip PN

10. in trng tip gip pn c to ra nh th no?

11. Do c th chn [barrier potential], diode c th c dng lm ngun in p c khng? Gii
thch.


Mc 1-6 Hot ng ca diode

12. diode c phn cc thun, cn phi mc u dng ca ngun in p n vng bn dn no
ca tip gip?

13. Hy gii thch ti sao cn phi c in tr mc ni tip khi diode c phn cc thun.


Mc 1-7 c tuyn Dng-Ap ca diode

14. Gii thch cch to ra phn c tuyn phn cc thun ca diode nh th no?

15. Bng cch no c th lm cho ro th gim t 0,7V xung 0,6V?


Mc 1-8 Cc m hnh ca diode

16. Hy xc nh mi diode mch hnh 1.41, l c phn cc thun hay phn cc ngc.













17. Hy xc nh in p trn mi diode mch hnh 1.41, theo m hnh thc t ca diode.


-17-
18. Hy xc nh in p trn mi diode mch hnh 1.41, bng m hnh diode l tng






19. Hy xc nh in p trn mi diode mch hnh 1.41, s dng m hnh diode y c
10
d
r' = v 100 M
R
r' = .




Mc 1-10 Chnh lu bn k

20. Hy v dng sng v ghi tr s ca in p ra cho mi mch hnh 2.68.









21. in p ngc nh trn mi diode hnh 2.68 l bao nhiu?.


22. Tnh gi tr trung bnh ca in p ca in p c chnh lu bn k vi gi tr in p nh l
200 V.


23. Tnh gi tr trung bnh ca in p ca in p c chnh lu bn k c gi tr in p nh l
200 V.


24. Gi tr dng thun nh chy qua mi diode mch hnh 2.68, l bao nhiu?


25. Bin p ngun cung cp c t s vng dy l 5:1. in p th cp l bao nhiu nu cun dy s
cp c ni vi ngun 120 V rms?



26. Xc nh mc cng
sut nh v trung
bnh c phn b
n R
L
mch hnh
2.69.

-18-
Mc 1-11 Mch chnh lu ton k

27. Tnh tr trung bnh cho mi in p ghi hnh 2.70.















28. Xt mch hnh 2.71.
(a) Kiu mch ny l mch g?

(b) in p nh th cp ton b l bao nhiu?

(c) Tnh in p nh trn mi na cun dy th cp.


(d) V dng sng in p trn R
L
.

(e) Mc dng nh chy qua mi diode l bao nhiu?

(f) PIV ca mi diode trong mch l bao nhiu?

29. Tnh in p nh trn mi na ca bin p im
gia cun dy c dng trong b chnh lu ton
k c mc in p ra trung bnh l 120V.

30. Hy trnh by cch mc cc diode b chnh lu
im gia nh th no to ra in p ton k m
trn in tr ti.

31. Thng s PIV cn phi c l bao nhiu cc diode trong mch chnh lu cu to ra mc in p
ra trung bnh l 50V?

32. in p ra ca mch chnh lu cu l 20V. Mc in p ngc nh trn cc diode l bao nhiu?

33. V dng sng in p ra ca mch chnh lu cu hnh 2.72. Lu l ton b diode c o
ngc so vi cc mch trc y.





-19-
Mc 1-12 Mch lc ngun cung cp v n nh in p

34. Mch lc ca b chnh lu cung cp in p ra dc l 75V vi in p gn nh-nh l 0,5V. Tnh
h s gn.


35. Mch chnh lu ton k c mc in p ra nh l 30V. B lc u vo bng t 50 F s c
mc vi b chnh lu. Tnh mc gn nh-nh v mc in p ra dc trn in tr ti 600O.


36. Mc gn theo phn trm ca mch lc chnh
lu bi tp 35 l bao nhiu?


37. Tr s ca t lc cn phi c l bao nhiu cho h s gn 1% ca b chnh lu ton k c in
tr ti l 1,5kO? Cho bit b chnh lu cung cp mc in p ra nh l 18V.




38. Mch chnh lu ton k c mc in p chnh lu nh l 80V t ngun ac 60Hz. S dng t lc
10F, xc nh h s gn vi in tr ti l 10kO.




39. Tnh mc gn nh-nh v mc in p ra dc
mch hnh 2.73. Bin p c thng s in p
th cp l 36 V rms, v in p ngun in c
tn s 60Hz.







40. Xt mch hnh 2.73, v v dng sng in p
theo quan h vi in p vo: V
AB
, V
AD
, v
V
CD
.

41. Nu in p ra khng ti ca b n nh in
p l 15,5V v in p ra y ti l 14,9V, th
n nh ti theo phn trm l bao nhiu?

42. Cho b n nh in p c n nh ti theo
phn trm l 0,5%. Mc in p ra y ti l
bao nhiu nu mc in p ra khng ti l
12,0V?.
-20-
Mc 1-13 Cc mch hn ch v mch ghim bng diode

43. Hy xc nh dng sng ra cho mch
hnh 2.74.




44. Hy xc nh in p ra cho mch
hnh 2.75(a) tng ng vi mi in
p vo hnh 2.75(b), (c), v (d).











45. Hy xc nh dng sng ca in p ra cho mch hnh 2.76.





















-21-
46. Hy xc nh dng sng ca
in p trn ti R
L
cho mi
mch hnh 2.77.











47. Hy v dng sng ca in p ra cho mi mch hnh 2.78.












48. Hy xc nh dng sng ca in p ra cho mi mch hnh 2.79.
















-22-
49. Hy xc nh dng sng ca in p ra cho mi mch hnh 2.80. Cho bit hng s thi gian RC
l ln hn nhiu so vi chu k ca tn hiu vo.











50. Lp li bi tp 49 vi cc diode c mc xoay ngc chiu.







Mc 1-14 Mch nhn p

51. Mt mch bi p c in p u
vo l 20 Vrms. Mc in p u
ra l bao nhiu? Hy v mch, ch
th ti cc u ra v thng s PIV
ca diode.



52. Lp li bi tp 51 cho b nhn 3
in p v b nhn 4 in p.






Mc 1-15 Thng s ca diode

53. T trang s liu hnh 2.55, hy xc nh in p ngc nh l bao nhiu m diode 1N183A c
th chu ng c.






-23-







































54. Lp li nh bi tp 53 cho diode 1N188A.



55. Nu in p ra nh ca mch chnh lu cu ton k l 50V, xc nh tr s nh nht ca in tr
hn ch xung gn cn thit khi s dng diode 1N183A.




Mc 1-16 Sai hng trong mch diode

56. Nu 1 trong s cc diode b chnh lu cu b h mch, th in p ra s nh th no?



-24-
57. T cc s ch th trn ng h o mch hnh 2.81, hy xc nh xem b chnh lu ang hot
ng bnh thng khng? Nu khng bnh thng, xc nh h hng c th d xy ra nht.














58. Hnh 2.82, l th hin dng sng in p ra ca cc mch chnh lu khc nhau hin th trn my
hin sng. Theo mi trng hp, hy xc nh mch chnh lu c hot ng ng chc nng
khng v nu khng ng chc nng th hy xc nh h hng c th d xy ra nht.














59. Cn c vo cc gi tr (ghi
trong mch)ca cu kin
cho, mch hnh 2.83 c th
h hng khng? Nu nh vy
th ti sao?









-25-
60. Xem cc s ch th trn ng h o trong mi mch hnh 1.42, v xc nh diode no ng chc
nng, hay diode no h mch hoc b ngn mch. Gi s m hnh l tng.














61. Hy xc nh in p so vi
t ti tng im o trong
mch hnh 1.43. Gi s m
hnh diode thc t.



62. Hy xc nh sai hng c th d xy ra nht trong bng mch hnh 2.84 theo mi hin trng
di y. Trng thi hot ng lin quan cn phi ly theo tng trng hp. Bin p c mc in
p ra nh mc l 36V.
(a) Khng o c in p t im o 1 i vi im o 2.
(b) Khng c in p t im 3 i vi im o 4, 110V rms o gia im o 1 v im o 2.

(c) 50V t im o 3 i vi im o
4. in p vo ng mc 110V
rms.


(d) 25V t im o 3 i vi im
o 4. in p vo ng mc
110V rms.

(e) in p chnh lu ton k c mc
nh khong 50V ti im o 7 so vi t.

(f) in p gn 120Hz cao ti im o 7.

(g) in p gn c tn s 60Hz ti im o 7.

(h) Khng c in p ti im o 7.




-26-
63. Khi o th bng mch ngun cung cp hnh 2.84 c mc in tr ti 10kO, o in p ti u
dng ca t lc c in p gn 60Hz. Thay ton b diode, cm phch in ngun vo bng
mch, v o li im o kim chng hot ng c ng khng v thy rng in p o vn c
in p gn 60Hz. Sai hng lc ny l g?



64. Nu diode pha trn cng bng mch hnh 2.84, lp sai b o ngc, th in p c th o
c ti im o 8 l bao nhiu?


65. Mt mch chnh lu ton k c t lc cung cp in p ra dc l 35V cho ti 3,3kO. Hy xc nh
tr s nh nht ca t lc nu mc in p gn nh-nh yu cu l 0,5V.

66. Mt mch chnh lu ton k cha lc vi mc in p vo l 220V; 50Hz cung cp in p ra c
mc nh l 15V. Khi mc mch lc u vo bng t v ti l 1kO, in p ra dc l 14V. Mc
in p gn nh-nh l bao nhiu?


67. Vi mt b chnh lu ton k, dng xung o c b lc bng t l 50A. Bin p c thng s
in p th cp l 24V vi in p vo l 120V; 60Hz. Hy tnh tr s ca in tr xung gn cn
trong mch ny.



68. Thit k b chnh lu ton k s dng bin p im gia 18V. gn u ra khng vt qu
5% bin in p ra, vi in tr ti l 680O. Ch r cc thng s nh mc I
o
v PIV ca cc
diode v chn diode thch hp t hnh 2.55.







69. Thit k b ngun cung cp c lc c th cho cc mc in p ra l + 9V 10% v - 9V 10%
vi mc dng ti ln nht l 100mA. Hai mc in p phi c chn bng chuyn mch thit
lp hai u ra. in p gn cn phi khng vt qu 0,25V rms.








-27-
70. Thit k mch xn in p sin 20V rms thnh in p xung c bin dng ln nht l 18V
v bin m ln nht l 10V s dng ngun in p dc n 24V.







71. Hy xc nh mc in p trn mi t trong mch hnh 2.85.







Mc 1-17 Diode n p

72. Mt diode zener c V
Z
= 7,5V v Z
Z
= 5O ti mc
dng o. V mch tng ng ca zener.


73. T c tuyn hnh 3.58, dng zener nh nht (I
ZK
),
in p zener ti mc I
ZK
gn ng l bao nhiu?


74. Khi dng ngc trong mt diode zener tng ln t
20mA n 30mA, th in p zener s thay i t
5,6V n 5,65V. Tr khng ca zener l bao nhiu?


75. Mt diode zener c tr khng l 15O. in p u cc ca zener l bao nhiu ti mc dng 50mA
nu V
Z
= 4,7V ti mc dng I
Z
= 25mA?



76. Mt diode zener c cc thng s sau: V
Z
= 6,8V ti 25C v h s nhit TC = + 0,04% / C.
Hy xc nh in p zener ti 70C.


Mc 1-18 Cc ng dng ca diode n p

77. Xc nh mc in p vo thp nht cn thit c s n nh cho mch c
thit lp nh hnh 3.59. Gi thit diode zener l tng c I
ZK
= 1,5mA v V
Z

= 14V.


-28-
78. Lp li nh bi tp 77, vi Z
Z
= 20O v V
Z
= 14V ti mc dng 30mA.


79. Cn phi iu chnh R trong mch hnh 3.60, n gi tr no to ra I
Z
= 40mA? Cho V
Z
=
12V ti mc dng 30mA v Z
Z
= 30O.




80. t in p sin 20V nh vo
mch hnh 3.60, thay
cho ngun dc. V dng sng
ra. S dng gi tr ca cc
thng s cho bi tp 79.

81. B n nh bng zener c ti
nh hnh 3.61. V
Z
= 5,1V
ti I
Z
= 49mA; I
ZK
= 1mA; Z
Z

= 7 O, v I
ZM
= 70mA. Xc
nh cc mc dng ti cho
php ln nht v nh nht.

82. Tnh n nh ti theo phn trm cho bi tp 81.
[
NL FL
FL
Load regulation = 100%
V V
V
| |
|
\ .
]

83. Phn tch mch hnh 3.61, c n nh ngun
tnh theo phn trm khi s dng in p vo t 6V
n 12V khng ti.
[
OUT
IN
Line regulation 100%
V
V
| | A
=
|
A
\ .
]
84. Mch n nh bng zener c in p ra khng ti, V
NL
= 8,23V, v in p ra y ti V
FL
= 7,98V.
Tnh n nh ti tnh theo phn trm. [
NL FL
FL
Load regulation = 100%
V V
V
| |
|
\ .
]




85. b n nh bng zener, khong thay i ca in p ra l 0,2V khi in p vo t 5V n 10V.
n nh ngun theo phn trm l bao nhiu? [
OUT
IN
Line regulation 100%
V
V
| | A
=
|
A
\ .
]



86. in p ra ca b n nh bng zener l 3,6V khi khng ti v 3,4V khi y ti. Tnh n nh
ti theo phn trm. [
NL FL
FL
Load regulation = 100%
V V
V
| |
|
\ .
]



-29-
Mc 1-19 Diode bin dung - VARACTOR

87. Hnh 3.62, l c tuyn in p ngc theo in dung ca
mt varactor. Hy xc nh thay i theo in dung nu
V
R
thay i t 5V n 20V.



88. Hy xt c tuyn hnh 3.62, v xc nh gi tr ca V
R
c
in dung 25pF.



89. Gi tr in dung cn thit cho mi varactor mch hnh 3.63, l bao nhiu to ra tn s cng
hng l 1MHz?


90. Ti gi tr no cn phi c in p V
R
cho bi tp
89 nu varactor c c tuyn nh hnh 3.62?

Mc 1-20 Diode pht quang - LED

91. LED hnh 3.64(a) c c tuyn pht quang
nh hnh 3.64(b). B qua st p thun ca
LED, hy xc nh mc cng sut pht x
(nh sng) c to ra theo mW.



92. Hy xc nh cch mc b hin th
by on hnh 3.65, hin th s
5. Dng thun lin tc ln nht
cho mi LED l 30mA v s dng
ngun cung cp l + 5V.





93. Lp rp mng n-giao thng vi LED mu vng bng cch dng
s lng ti thiu cc in tr hn dng lm vic t ngun cung
cp l 24 V v bao gm 100 LED c
F
30 mA I = v s lng cc
LED bng nhau trong mi nhnh song song. Hy th hin mch v
gi tr cc in tr.



94. Vi mt photodiode ti mc chiu sng cho, in tr ngc l
200kO v in p ngc l 10V. Dng chy qua photodiode l bao
nhiu?



-30-
95. in tr ca mi photodiode
hnh 3.66, l bao nhiu?






96. Khi ng chuyn
mch hnh 3.67,
microammeter ch
th tng hay gim?
Gi s D
1
v D
2

c ghp quang.

Mc 1-21 Cc loi diode khc

97. c tuyn V-I ca mt diode tunnel cho thy l dng in thay i t 0,25mA n 0,15mA khi
in p thay i t 125mV n 200mV. in tr l bao nhiu?



98. Kiu mch no thng hay s dng diode tunnel?


99. Mc ch lm lch b mt no c trong s dng diode laser? Ti sao ch lm lch ring mt pha?


Mc 1-22 S c trong mch diode
100. i vi mi nhm cc mc in p o c ti cc im (1, 2, v 3) ghi hnh 3.68, xc nh
mch c hot ng ng chc nng hay khng, nhn dng cc h hng c th xy ra nht. Zener
c thng s 12V.
(a) V
1
= 110V rms; V
2
= 30V dc; V
3
= 12V dc.
(b) V
1
= 100V rms; V
2
= 30V dc; V
3
= 30V dc.
(c) V
1
= 0V; V
2
= 0V; V
3
= 0V dc.
(d) V
1
= 110V rms; V
2
= 30V nh ton k 120Hz; V
3
= 12V dc in p xung 120Hz..
(e) V
1
= 110V rms; V
2
= 9V; V
3
= 0V.
101. in p u ra ca mch hnh 3.68, l bao nhiu xt theo mi trng hp hng sau y?.
(a) D
5
h mch. (b) R h mch.
(c) C b r. (d) C h mch.
(e) D
3
h mch. (f) D
2
h mch
(g) T h mch. (h) F h mch.

-31-
102. Mt h thng tnh ton & iu khin
c lp t ti nh ca khch hng.
H thng ang c biu hin hot
ng chp chn nn cn phi kim
tra trc tin l bng mch ngun
cung cp & thu / pht hng ngoi.
Cn c vo hnh 3.69, hy xc nh
xem b ngun c vn sai hng
no khng.











103. Mt vn khc c h thng tnh ton & iu khin. Lc ny, h thng ngng hot ng hon
ton v bn li quyt nh kim tra trc tin bng mch ngun cung cp. Cn c vo thng tin
hnh 3.70, hy xc nh sai hng.



104. Lit k cc nguyn nhn c th c lm cho LED hnh 3.55 khng pht tia hng ngoi khi
ngun cung cp c ni vi ngun in li.

-32-
105. Lit k cc nguyn nhn c th c lm cho photodiode hnh 3.55, khng p ng vi tia hng
ngoi pht ra t LED. Nu cc bc theo trnh t c th c lp sai hng.




BI TP V THNG S CA DIODE
106. Tham kho trang s liu ca diode zener hnh 3.7.

(a) tiu tn cng sut dc ln nht ca diode 1N4738 ti 25C l bao nhiu?.

(b) Xc nh tiu tn cng sut ln nht ca diode 1N4751 ti 70C v 100C?.

(c) Mc dng nh nht ca 1N4738 cn cho s n nh l bao nhiu?.

(d) Mc dng ln nht ca 1N4750 ti 25C l bao nhiu?.
(e) Dng chy qua 1N4750 thay i t 25mA n 0,25mA.
Tr khng zener cn phi thay i nh th no?
-33-
(f) in p zener ln nht ca 1N4736 ti 50C l bao nhiu?

(g) in p zener nh nht ca 1N4747 ti 75C l bao nhiu?.
107. Tham kho trang s liu ca diode bin dung hnh 3.22.
(a) in p ngc ln nht ca diode 1N5139 l bao nhiu?.
(b) Xc nh tiu tn cng sut ln nht ca diode 1N5141 ti nhit mi trng l 60C?

(c) Xc nh tiu tn cng sut ln nht ca diode 1N5148 ti nhit v l 80C?.

(d) Ti mc in p ngc 20V in dung ca 1N5148 l bao nhiu?
(e) Nu ch ly theo tiu chun h s phm cht, th cn phi chn diode bin dung no?
(f) in dung in hnh ca 1N5142 l bao nhiu ti V
R
= 60V?
-34-
108. Tham kho trang s liu ca diode pht quang - LED hnh 3.31.
(a) C th t 9V theo chiu phn cc ngc ngang qua mt MLED81 c khng?

(b) Xc nh tr s nh nht ca in tr ni tip vi MLED81 khi s dng in p 5,1V phn
cc thun cho diode?
(c) Gi s mc dng thun l 50mA v st p thun l 1,5V lm vic nhit xung quang
45C. C vt qu thng s cng sut ln nht khng?.
(d) Xc nh cng bc x theo mc dng thun l 30mA.
(e) Cng bc x ti gc 20 tnh t trc l bao nhiu nu dng thun l 100mA?
-35-
109. Tham kho trang s liu ca photodiode hnh 3.36.



















(a) Mt MRD82 c mc ni tip vi mt in tr 10kO v ngun in p phn cc ngc.
Khng chiu sng vo diode. St p trn in tr l bao nhiu?.

(b) Ti bc sng no s c mc dng ngc ln nht theo chiu sng cho?.

(c) Mc dng ti l bao nhiu ti nhit mi trng l 60C?.

(d) Ti bc sng no nhy ca MRD821 mc ln nht?.
(e) Nu nhy ln nht l 50A / mW / cm
2
, th nhy ti 900nm l bao nhiu?
(f) Tia hng ngoi vi bc sng l 900nm chiu vo MRD821 vi mc chiu sng l
3mW /cm
2
v gc chiu l 40 t trc ln nht. Xc nh mc dng ngc.

-36-





BI TP NNG CAO

110. Kho st s ca bng mch hnh 3.71, v xc
nh kiu mch l mch g?





111. Nu in p vo 110V rms; 60Hz c ni n cc
u vo ac, hy xc nh cc mc in p u ra
trn bng mch hnh 3.71.






112. Nu mi u ra ca bng mch hnh 3.71, c
mc ti c 1,0kO, thng s nh mc cn phi c
s dng l bao nhiu?





113. Hy thit k b n nh in p bng zener m bo cc thng s sau: in p u vo l 24V dc,
dng ti l 35mA, v in p trn ti l 8,2V.








BI TP B SUNG PHN DIODE

114. Mt diode silicon dn nhit 25C mc st p trn hai cc diode l 0,7V. Xc nh mc st
p V trn diode nu diode lm vic nhit +100
o
C v 100
o
C.
[p s:
o o
(100 C) = 0, 55 V; (- 100 C) = 0, 95 V V V

]



115. Mch hnh 1.31, dng chnh lu sng sin c 100V
rms
v tn s 60Hz. Mc in p ra nh nht khng th gim
di 70V v t s bin p l 1:2. in tr ti l 2kO.
Tnh in dung cn thit ca t lc mc song song vi R
L
.
[p s: 8, 25 F ]





-37-









116. in p ra ca b chnh lu bn k vo khong 50V, tn s 60Hz. Gi s tr thun ca diode
bng 0, ti thp nht c th mc vo mch khi s dng t khong 50F duy tr mc in p
gn nh nht trn 40V l bao nhiu?
[p s: 1, 67 kO]





117. Mch chnh lu ton k nh mch hnh 1.31, c bin p
vi t s vng dy l 5:1.
(a) Tnh tr s in dung ca t cn duy tr mc in
p nh nht khong 10V trn ti 100O.
[p s: 233 F ]
(b) Nu in p tn hiu vo phn ( a) thay i trong
khong t 110V n 120V
rms
, tn s 60Hz, th tr s
in dung cn thit l bao nhiu? [p s: 233 F ]












118. Mt mch n nh bng diode Zener (hnh 1.37) c in p u vo
thay i trong khong t 10V n 15V v mc dng ti thay i
trong khong t 100mA n 500mA.
(a) Tnh tr s ca R
i
v I
Zmax
, bit rng mch s dng diode zener
6V. [p s: 6,33 ; 1,32 A O ]
(b) Hy tnh cng sut nh mc cho diode zener v in tr vo
(R
i
). [p s: 7,92 W; 12,8 W]
(c) Hy tnh tr s ca t cn thit nu mc ngun l u ra ca
mch nn bn k vi tn hiu vo l 60Hz. [p s: 4731 F ]

















-38-




119. V c tuyn I
D
theo V
D
cho mt diode
silicon nu dng bo ha ngc I
S
=
0,1A, s dng n = 1,5 i vi silicon.
Xc nh mc in p chuyn sang dn
ca diode.








120. V c tuyn I
D
theo V
D
cho mt diode germanium nu dng bo ha ngc I
S
= 0,01mA. Xc
nh mc in p chuyn sang dn cho diode (c tuyn c th v trn cng trc th nh c
tuyn ca bi tp 1.4).










121. Nu ti u ra ca mt mch nn bn k l 10kO, th tr s ca t cn phi c l bao nhiu
c mc in p ra khng thay i qu 5%? in p vo l 100V
rms
, 60Hz. Da vo hnh
P1.1. Suy ra dng sng ra.
[p s: = 33, 4 F C ]








122. Thit k mt b ngun cung cp theo kiu mch nn bn k nhn tn hiu vo l
120V
rms
, 60Hz v yu cu mc in p ra ln nht l 17V v thp nht l 12V. Ngun cung cp
s cung cp in p ngun cho mch in t cn mc dng khng i l 1A. Hy xc nh cu
hnh mch, t s vng dy ca bin p, tr s ca t. Gi s cc diode v bin p l l tng.














-39-




123. Nu ti u ra ca mch nn ton k l 10kO, tr s
ca t l bao nhiu cn thit duy tr mc in p
ra khng thay i thp nhiu so vi 10% ? Tn hiu
vo l 110V
rms
, 60Hz. Da vo hnh P1.3. V dng
sng ra.








124. Lp li bi tp 1.10, vi kiu ngun cung cp l mch chnh lu ton k.
[p s: 5; 12 ; 2, 36 mF
L
a= R = O ]








125. Hy xc nh thng s ca t trong mch hnh 1.31, khi a
= 6 v R
L
= 50O. Mc in p nh nht n ti cn phi c
mc suy gim khng qu 20%.














127. Nu mt diode zener c mc trong mch nh hnh P1.6, tr s in
tr R
i
l bao nhiu duy tr in p trn ti mc 10V (V
Z
) khi dng ti
thay i t 50mA n 500mA v in p vo thay i t 15V n 20V ?
Hy xc nh mc cng sut nh mc cn thit cho in tr v diode
zener.












-40-


128. Mch n nh bng zener nh hnh P1.6, s dng diode zener 20V
duy tr in p khng i 20V trn in tr ti R
L
. Nu in p vo
thay i t 32V n 43V v dng ti bin thin t 200mA n 400mA,
hy tnh chn tr s ca R
i
gi in p khng i trn ti. Xc nh
cng sut nh mc cn thit cho in tr v diode zener.









129. Mch n nh zener nh hnh P1.7, s dng diode zener 9V gi mc
in p khng i 9V trn ti, vi in p vo thay i t 18V n 25V
v dng ra thay i t 400mA n 800mA. Gi s R
Z
= 0.
(a) Chn tr s cn thit cho R
i
v xc nh mc cng sut yu cu nh
nht ca in tr vo.
(b) Xc nh mc cng sut nh mc ca diode zener.
(c) Tnh bin thin ca in p ra nh nh nu R
Z
= 1O.
[p s: 9, 76
i
R = O]














130. Gi s khng c tn hao trong cc diode nn ca
mch nn ton k (hnh P1.8) vi n = 2, tr s ca
R
i
cn thit l bao nhiu duy tr V
L
mc
16V vi dng ti l 500mA, s dng zener 16V?
V
S
thay i trong khong t 110Vrms n 120V
rms
,
60Hz. Gi s R
Z
= 0. Mc in p mch n nh
cn phi khng c gim nhiu hn 8V trn mc
V
Z
.




-41-






131. Gi s khng c st p cc diode chnh lu trong
mch hnh P1.8, v n = 2, tr s ca R
i
cn thit l
bao nhiu duy tr V
L
= 16V vi mc dng ti
khong 500mA? in p vo ca bin p l
110Vrms n 120Vrms, 60Hz. in p ra ca
mch nn c lc khng th thay i nhiu
hn 5V. Hy xc nh cng sut nh mc cn
thit cho in tr v diode zener.
















132. Thit k b ngun n p ton k s dng bin p im gia 4:1 v diode zener 8V, 1W cung
cp 8V khng i cho ti thay i t 200O n 500O. in p vo ca bin p l 120Vrms,
60Hz. B qua tn hao trong bin p v cc diode. Xc nh:
(a) I
Zmax
v I
zmin
; (b) R
i
v V
smin
; (c) tr s t cn thit; (d) n nh theo % khi R
Z
= 2 O.
[p s:
max min
125 mA; 93, 7 ; = 12,9 V; 141 F;% Reg 2,81%
Z i s
I = R = V C= = O ]

























-42-






133. Thit k b ngun n p ton k s dng bin p im gia 5:1 v diode zener 8V, 2W cung
cp 8V khng i cho ti thay i t 100O n 500O. in p vo ca bin p l 120V
rms
,
60Hz. B qua tn hao trong bin p v cc diode. Xc nh:
(a) I
Zmax
v I
Zmin
. (b) R
i
v V
Smin
. (c) tr s t cn thit.
(d) n nh theo % khi R
Z
= 2 O. (e) Cng sut nh mc ca R
i
.























134. S dng cc gi tr ca in p vo i vi R
i
ca
bi tp 1.18, nhng dng zener 12V, tr s ca R
i
cn phi c l bao nhiu duy tr 12V u ra
nu ti thay i t 20mA n 600mA? Thng s
ca t cn phi c l bao nhiu?






















-43-
135. S dng mch hnh P1.8, v gi s khng c tn
hao cc diode nn, tr s ca R
i
l bao nhiu
duy tr 12V trn ti bng cch s dng diode zener
12V, khi V
S
t 105V
rms
n 120V
rms
, 60Hz? in
p ra ca mch nn gim 20% do thng s ca t
C
1
, v ti thay i t 50mA n 500mA. Thng s
ca t l bao nhiu? Cho n = 2.













-44-
TM TT NI DUNG TRANSISTOR HIU NG TRNG

JFETs
Tip gip pn cng-ngun cn phi c phn cc-ngc.

GS
V iu khin
D
I .
Gi tr ca
DS
V m ti
D
I tr nn khng i
(bo ha) c gi l in p tht knh (
DSP
V ) .
Gi tr ca
GS
V m ti
D
I tr nn bng 0 c
gi l in p ngt knh (
GS(off )
V ) .

DSS
I l gi tr dng mng khi
GS
0 V = .
c tuyn truyn t:
2
GS
D DSS
GS(off )
1
V
I I
V
| |
~
|
|
\ .

h dn-thun:
GS
0
GS(off )
1
m m
V
g g
V
| |
=
|
|
\ .
, trong :
DSS
GS(off )
2
m0
I
g
V
=
E-MOSFETs
Ch lm vic ch tng cng

GS
V cn phi ln hn
GS(th)
V .
Ch tng cng:
MOSFET tng cng knh n:
GS
V dng
MOSFET tng cng knh p:
GS
V m

GS
V iu khin
D
I .
Gi tr ca
GS
V m ti
D
I bt u tng c gi l
in p ngng (
GS(th)
V ) .
c tuyn truyn t:
( )
2
D GS GS(th)
2
k
I V V =
H s k c th tnh theo phng trnh trn bng cch thay th cc gi tr ca
D
I v
GS
V tng
ng vi
D(on)
I c quy nh theo
GS
V .
D-MOSFETs
C th lm vic c ch ngho hoc ch tng cng.
GS
V c th c phn cc ti
GS
0 V =
Ch ngho:
MOSFET ngho knh n:
GS
V m
MOSFET ngho knh p:
GS
V dng
Ch tng cng:
MOSFET tng cng knh n:
GS
V dng
MOSFET tng cng knh p:
GS
V m

GS
V iu khin
D
I .
Gi tr ca
GS
V m ti
D
I tr nn bng 0 c gi l
in p ngt (
GS(off )
V ) .
c tuyn truyn t:
( )
2
D GS GS(th)
2
k
I V V =


-45-
IGBT
c iu khin bng in p nh MOSFET.
H c tuyn ra ging nh BJT.
C ba in cc: cng, collector, emitter.



PHN CC CHO FET (Cc tnh in p v chiu dng in l o ngc i vi FET knh p)











2-1. Transistor hiu ng trng l cu kin n ht ti (ch mt loi ht ti in).
Cc in cc ca FET l in cc ngun [Source], cc mng [Drain], v cc cng [Gate].
JFET lm vic vi tip gip pn (cng-ngun) phi c phn cc-ngc.
in tr vo cao ca JFET l do tip gip pn (cng-ngun) c phn cc-ngc.
Phn cc ngc JFET s lm cho vng ngho tng trong phm vi knh dn, do vy lm tng
in tr knh dn.
2-2. i vi JFET knh-n,
GS
V c th thay i t 0, m cho n in p ngng dn,
GS(off )
V . i vi
JFET knh-p,
GS
V c th thay i t 0, dng cho n in p ngng dn,
GS(off )
V .

DSS
I l dng mng hng khi
GS
0 V = . iu ny l ng cho c JFET v D-MOSFET .
FET c gi l cu kin theo lut-bnh phng do quan h gia
D
I theo bnh phng ca
biu thc gm c
GS
V .
2-3. Phn cc im gia ca mt JFET l
D DSS
2 I I = , nhn c bng cch thit lp
GS GS(off )
3, 4 V V ~
im-Q mch JFET phn cc phn-p l n nh hn so vi mch JFET t-phn cc.
Phn cc ngun dng-hng s tng cng n nh ca mch JFET t-phn cc.
2-4. JFET s dng nh mt bin tr khi c phn cc lm vic vng thun tr [ohmic].
in p cng s iu khin
DS
R vng thun tr.
Khi JFET c phn cc ti gc h trc ta (
GS
0 V = ,
D
0 I = ), in tr knh dn ac s c
iu khin bi in p cng.
2-5. MOSFET khc vi JFET c im l cng ca MOSFET c cch ly khi knh bng mt
lp SiO
2
, khc vi cng v knh JFET c cch ly bi mt tip gip pn.
MOSFET ngho (D-MOSFET) c th hot ng vi in p cng-ngun bng 0, dng, hoc
m.
D-MOSFET c knh vt l gia mng v ngun.
i vi D-MOSFET, cc gi tr m ca
GS
V s to ra ch ngho v gi tr dng ca
GS
V s
to ra ch tng cng.
MOSFET tng cng khng c knh vt l.
Khc vi JFET v D-MOSFET, E-MOSFET khng hot ng vi
GS
0 V = .
-46-
Knh dn c cm ng E-MOSFET bng cch t in p
GS
V ln hn so vi gi tr in
p ngng,
GS(th)
V .
2-6. E-MOSFET khng c thng s
DSS
I . Nu c th gi tr rt nh (l tng l bng 0).
E-MOSFET knh-n c
GS(th)
V dng. E-MOSFET knh-p c
GS(th)
V m.
c tuyn truyn t ca D-MOSFET giao ct vi trc dc
D
I .
c tuyn truyn t ca E-MOSFET khng giao ct vi trc dc
D
I .
Tt c cc cu kin MOS u d b hng do tnh in (ESD).
2-7. Phn cc im gia cho D-MOSFET l
D DSS
I I = c c bng cch thit lp
GS
0 V = .
D-MOSFET c cng c phn cc 0 do c in tr ln so vi t.
E-MOSFET cn phi c
GS
V ln hn so vi gi tr ngng.
2-8. BJT c cng cch ly (IGBT) l kt hp cc c tnh u vo ca MOSFET vi cc c tnh
u ra ca BJT.
IGBT c ba in cc: emitter, cng, v collector.
IGBT c s dng trong cc ng dng chuyn mch in p-cao.
2-9. H mch cng kh pht hin mch D-MOSFET phn cc-0 do in p cng thng mc
0 V, tuy nhin c th xut hin in p thay i.
H mch cng d pht hin mch E-MOSFET bi v in p cng thng khc vi 0 V.
2-10. in dn,
m
g , ca FET lin quan vi dng ra,
D
I , vi in p u vo,
gs
V .
H s khuych i in p ca mch khuych i ngun-chung (CS) c xc nh ch yu
bi in dn,
m
g , v in tr mng,
d
R .
in tr ni mng-ngun,
ds
r' ca FET s nh hng n h s khuych i (s lm gim h
s khuych i) nu n khng ln hn nhiu so vi
d
R c th b qua.
in tr gia cc ngun vi t (
s
R )khng c r mch bng t s lm gim h s khuych
i in p ca b khuych i bng FET.
in tr ti c mc n cc mng ca mch khuych i ngun-chung s lm gim h s
khuych i in p.
C s o pha 180 cc in p gia cng v mng.
in tr vo ti cng ca FET l rt cao.
2-11. H s khuych i ca mch khuych i mng-chung (CD) hay lp li-cc ngun (SF) lun
lun nh hn 1.
mch SF khng c s o pha tn hiu gia cng v ngun.
2-12. in tr vo ca mch khuych i cng-chung (CG) bng nghch o ca
m
g .
Mch khuych i cascode l kt hp mch khuych i CS v CG.
2-13. Mch khuych i lp D l mch khuych i phi tuyn bi v cc transistor hot ng nh
cc chuyn mch.
Mch khuych i lp D s dng iu ch bin -xung (PWM) biu din tn hiu vo.
B lc thng-thp s chuyn i tn hiu PWM tr li thnh tn hiu vo ban u.
Hiu sut ca b khuych i lp D s t n 100%.
2-14. MOS b (CMOS) c s dng trong cc mch chuyn mch s cng sut-thp.
CMOS s s dng mt MOSFET knh-n v mt MOSFET knh-p mc ni tip vi nhau.
B o, cng NAND, v cng NOR l cc v d ca mch logic s.







-47-




Cu hi v transistor hiu ng trng

1. JFET l . . .
(a) cu kin n ht ti; (b) cu kin iu khin bng in p;
(c) cu kin iu khin bng dng in; (d) gm c (a) v (c). (e) gm c (a) v (b).



2. Knh dn ca JFET l gia . . .
(a) cng v mng; (b) mng v ngun; (c) cng v ngun; (d) u vo v u ra


3. JFET lun lm vic vi
(a) phn cc ngc tip gip pn cng-ngun;(b) phn cc thun tip gip pn cng-ngun
(c) in cc mng c ni t; (d) in cc cng c ni vi cc ngun.


4. Vi V
GS
= 0V, dng mng s tr nn khng i khi V
DS
vt qu
(a) in p ngng dn; (b) V
DD
; (c) V
DSP
; (d) 0V


5. Vng dng-hng [constant-current] ca FET thuc trong khong gia
(a) vng ngng dn v bo ha; (b) vng ngt v in p tht knh;
(c) 0 v I
DSS
; (d) in p tht knh v in p nh thng.


6. I
DSS
l
(a) dng mng vi cc ngun b ngn mch;(b) dng mng ti vng ngt;
(c) dng mng c th c ln nht; (d) dng mng im gia.


7. Dng mng vng dng-hng s tng ln khi
(a) in p phn cc cng-ngun gim; (b) in p phn cc cng-ngun tng;
(c) in p phn cc mng-ngun tng; (d) in p phn cc mng-ngun gim.


8. Trong mt mch FET c V
GS
= 0V; V
DD
= 15V; I
DSS
= 15mA, v R
D
= 470O. Nu R
D
gim xung
bng 330O, th I
DSS
bng
(a) 19,5mA; (b) 10,5mA; (c) 15mA; (d) 1mA.


9. Ti vng ngt, knh dn ca JFET l
(a) mc rng nht ca knh; (b) b nghn hon ton bi vng ngho;
(c) rt hp; (d) c phn cc ngc.


10. Trang s liu ca JFET cho V
GSOFF
= - 4V. in p tht knh [pinch-off], V
DSP
,
(a) khng th xc nh c; (b) = - 4V; (c) ph thuc vo V
GS
;(d) = + 4V.


11. JFET cu hi 10
(a) l JFET knh n; (b) l JFET knh p; (c) c th l c hai loi.


-48-
12. Cho mt JFET c I
GSS
= 10nA o ti mc V
GS
= 10V. in tr vo l
(a) 100MO; (b) 1MO; (c) 1000MO; (d) 1000mO.


13. Mt JFET knh p, V
GSOFF
= 8V. Tr s ca V
GS
c phn cc im gia xp x bng
(a) 4V; (b) = 0V; (c) 1,25V; (d) = 2,34V.


14. MOSFET khc bit chnh vi JFET l do
(a) thng s cng sut; (b) MOSFET c hai cng;
(c) JFET c mt tip gip pn; (d) cc MOSFET khng c knh vt l.


15. in tr mng-ngun vng thun tr ph thuc vo
(a)
GS
V ; (b) cc tr s ca im-Q;
(c) dc ca c tuyn ti im-Q; (d) tt c cc phng n trn.


16. s dng c nh mt bin tr, JFET cn phi
(a) cu kin knh-n; (b) cu kin knh-p;
(c) c phn cc vng thun tr; (d) c phn cc vng bo ha.


17. Khi JFET c phn cc gc h trc ta , in tr knh ac s c xc nh bng
(a) gi tr ca im-Q; (b)
GS
V ;
(c) h dn; (d) c (b) v (c).


18. MOSFET khc bit chnh vi JFET l do
(a) thng s cng sut; (b) MOSFET c hai cng;
(c) JFET c mt tip gip pn; (d) cc MOSFET khng c knh vt l.


19. Mt D-MOSFET (MOSFET-ngho) s hot ng
(a) = 0A; (b) khng th xc nh c; (c) = I
DSS
;


20. Mt D-MOSFET knh-n vi V
GS
dng l ang lm vic
(a) ch ngho; (b) ch tng cng; (c) ngt [cutoff]; (d) bo ha.


21. Mt E-MOSFET (MOSFET kiu tng cng) knh-p c V
GS(th)
= - 2V. Nu
GS
0 V V = , th dng
mng l
(a) 0A; (b)
D(on)
I ; (c) ln nht; (d)
DSS
I .


22. mt E-MOSFET khng c dng mng cho n khi
GS
V
(a) t n
GS(th)
V ; (b) dng; (c) m; (d) = 0.


23. Tt c cc cu kin MOS u d b hng do
(a) qu nhit; (b) x in tch tnh; (c) qu p; (d) tt c cc l do trn .

-49-
24. Mt D-MOSFET (MOSFET-ngho) c phn cc mc V
GS
= 0V. Cc thng s trang s liu
ca cu kin l
DSS
20 mA I = v
GS(off )
= - 5 V V . Gi tr ca dng mng
(a) = 0A; (b) khng th xc nh c; (c) = 20 mA;


25. IGBT thng c s dng trong
(a) cc ng dng cng sut-thp; (b) cc ng dng tn s cao (rf);
(c) cc ng dng in p-cao; (d) cc ng dng dng-thp.


26. Trong mch khuych i ngun-chung (CS), in p ra l
(a) lch pha 180 so vi in p vo; (b) ng pha vi in p vo;(c) c ly trn cc ngun;
(d) c ly trn cc mng; (e) gm c (a) v (c); (f) gm c (a) v (d).


27. Trong mch khuych i ngun-chung (CS), V
ds
= 3,2V rms v V
gs
= 280mV rms. H s khuych
i in p bng
(a) 1; (b) 11,4; (c) 8,75; (d) 3,2


28. Trong mt mch khuych i CS, R
D
= 1kO; R
S
= 0,56kO; V
DD
= 10V, v g
m
= 4,5mS. Nu in
tr ngun c r mch hon ton, th h s khuych i s bng
(a) 450; (b) 45; (c) 4,5; (d) 2,52


29. Xt mt cch l tng, mch tng ng ca FET gm
(a) 1 ngun dng mc ni tip vi 1 in tr; (b) 1 in tr gia cc mng v cc ngun;
(c) 1 ngun dng gia cc cng v cc ngun; (d) 1 ngun dng gia cc mng v cc ngun


30. Gi tr ca ngun dng in cu hi 29 ph thuc vo
(a) in dn v in p cng-ngun; (b) in p ngun cung cp;
(c) in tr R
D
; (d) gm c (b) v (c).


31. Mt mch khuych i ngun-chung c h s khuych i in p bng 10. Nu tho t r mch
cc ngun,
(a) h s khuych i s tng; (b) h dn s tng;
(c) h s khuych i s gim; (d) im-Q s b dch chuyn.


32. Mt mch khuych i CS c in tr ti bng 10kO v R
D
= 0,8kO. Nu g
m
= 5mS v V
in
=
500mV, th in p tn hiu ra l
(a) 1,89V; (b) 2,05V; (c) 25V; (d) 0,5V.


33. Nu loi b in tr ti mch cho cu hi 32, th in p tn hiu ra l
(a) khng thay i; (b) gim; (c) tng; (d) bng 0.


34. Mt mch khuych i CD c R
S
= 1kO c in dn l 6mS, h s khuych i l
(a) 1; (b) 0,86; (c) 0,98; (d) 6.

-50-
35. Trang s liu ca transistor s dng trong mch khuych i mng-chung (CD) cho I
GSS
= 5nA ti
mc V
GS
= 10V. Nu in tr mc gia cng v t, R
G
= 50MO, in tr vo ton b xp x
bng
(a) 50MO; (b) 200MO; (c) 40MO; (d) 20,5MO.


36. Mch khuych i cng-chung (CG) khc vi c hai cu hnh CS v CD c im l mch c
(a) h s khuych i in p cao hn nhiu;(b) h s khuych i in p thp hn nhiu;
(c) in tr vo cao hn nhiu; (d) in tr vo thp hn nhiu.


37. Nu yu cu c hai h s khuych i in p v in tr vo cao, th cn phi s dng
(a) mch khuych i CS; (b) mch khuych i CD;
(c) mch khuych i CG;


38. Mch khuych i cascode bao gm
(a) mch khuych i CD v CS; (b) mch khuych i CS v CG;
(c) mch khuych i CG v CD; (d) hai mch khuych i CG.


39. Mch khuych i lp D tng t vi
(a) lp C; (b) lp B; (c) lp A; (d) ngoi cc trng hp trn.


40. Mch khuych i lp D s dng
(a) iu ch tn s; (b) iu ch bin ;
(c) iu ch rng-xung; (d) iu ch khng chu k.


41. E-MOSFET thng c dng cho cc ng dng chuyn mch l do . . . . . . . . ca chng
(a) c tnh ngng; (b) in tr vo cao;
(c) tuyn tnh; (d) h s khuych i cao.


42. Mch ly mu cn phi ly mu tn hiu ti mc thp nht ca
(a) mt khong thi gian trong chu k; (b) tn s tn hiu;
(c) hai ln tn s tn hiu; (d) cc chu k thay i.


43. Mch CMOS c bn s dng t hp ca
(a) cc MOSFET knh-n; (b) cc MOSFET knh-p;
(c) cc BJT pnp v npn; (d) mt MOSFET knh-n v mt MOSFET knh-p.


44. CMOS thng c s dng trong
(a) cc mch s; (b) cc mch tuyn tnh; (c) cc mch RF; (d) cc mch cng sut.


45. Nu c mt h mch bn trong gia cc mng v cc ngun mch khuych i CS, th in p
ti cc mng s bng vi
(a) 0V; (b)
DD
V ; (c)
GS
V ; (d)
GD
V .

-51-
BI TP

BI TP C BN

Mc 1-1 JFET

1.
GS
V ca mt JFET knh-p c tng ln t 1V n 3V.
(a) Vng ngho s hp hn hay rng hn?
(b) in tr knh tng hay gim?

2. Ti sao in p cng-ngun ca JFET knh-n cn phi lun lun bng 0 hoc l m?


3. V k hiu mch ca JFET knh-p v knh-n.
Ghi tn cc in cc.



4. Hy v cch mc in p phn cc gia cc
cng v cc ngun ca hai JFET mch
hnh 7.56.



Mc 2-2 H c tuyn v cc thng s ca JFET

5. Mt JFET c in p in p tht knh (
DSP
V ) l 5V. Khi
GS
0 V V = , th
DS
V l bao nhiu ti im
m dng mng tr nn khng i?



6. Mt JFET knh-n c phn cc mc
GS
- 2 V V = . Tr s ca
GS(off )
V l bao nhiu nu
DSP
V c
xc nh l 6V? Cu kin ang dn dn hay ngng dn?



7. Trang s liu ca mt JFET cho bit
GS(off )
- 8 V V = v
DSS
10 mA I = . Khi
GS
0 V V = , th
D
I l bao
nhiu i vi cc gi tr ca
DS
V ln hn in p tht?
DD
15 V V = .


8. Mt JFET knh-p c
GS(off )
6 V V = .
D
I l bao nhiu khi
GS
8 V V = ?


9. JFET mch hnh 7.57, c
GS(off )
- 4 V V = . Gi s rng tng in p
ngun cung cp
DD
V bt u ti mc 0 cho n khi ammeter t
n tr s n nh. Voltmeter s ch th gi tr tng ng l bao
nhiu?



-52-
10. Cc thng s sau t trang s liu ca
mt JFET:
GS(off )
- 8 V V = v
DSS
5 mA I = . Hy xc nh cc tr s
ca
D
I theo mi tr s ca
GS
V trong
khong t 0V n 8V theo cc mc
tng 1V. V c tuyn truyn t t
s liu trn.

11. Vi JFET bi tp 10, gi tr no ca
GS
V cn thit lp mc dng mng l 2,25mA?


12. Vi JFET, c g
m0
= 3200S. Gi tr ca g
m
l bao nhiu khi
GS
- 4 V V = , bit rng
GS(off )
- 8 V V = ?


13. Xc nh h dn thun ca JFET c phn cc mc
GS
- 2 V V = . Cc thng s t trang s
liu,
GS(off )
- 7 V V = v g
m
= 2000S o ti mc
GS
0 V = . Ngoi ra, hy xc nh dn np
truyn t thun, y
fs
.


14. Trang s liu ca mt JFET knh-p cho bit
GSS
5 nA I = ti mc
GS
10 V V = . Xc nh in tr
vo ca JFET.



15. V c tuyn truyn
t ca JFET c
DSS
8 mA I = v
GS(off )
- 5 V V = . S
dng t nht 4 im.


Mc 2-3 Phn cc cho JFET

16. Mt mch JFET knh-n t phn cc c mc dng mng l 12 mA v in tr mc ti cc ngun
l 100O. Gi tr ca
GS
0 V = tng ng l bao nhiu?



17. Hy xc nh tr s ca
S
R cn thit mch JFET t phn cc to ra
GS
- 4 V V = khi dng mng
D
5 mA I = .



18. Hy xc nh tr s ca
S
R cn thit mch JFET t phn cc to ra dng mng
D
2, 5 mA I = khi
GS
- 3 V V = .

-53-
19. Mt JFET c
DSS
20 mA I = v
GS(off )
- 6 V V = .
(a) Gi tr ca
D
I l bao nhiu khi
GS
0 V = ?


(b) Gi tr ca
D
I l bao nhiu khi
GS GS(off )
V V = ?


(c) Nu tng
GS
V t - 4V n
1V, th
D
I s tng ln hay
gim xung?

20. Hy xc nh
DS
V v
GS
V cho mi
mch hnh 7.58.







21. S dng c tuyn hnh 7.59, xc nh gi tr ca
S
R p
ng vi dng mng l 9,5mA.


22. Thit lp phn cc im gia cho JFET c
DSS
14 mA I = v
GS(off )
- 10 V V = . S dng ngun cung cp 24V. Hy v
mch v tnh cc tr s cc in tr. Cng nh cc tr s ca
D
I ,
GS
V , v
DS
V .



23. Hy xc nh in tr vo ton b cho mch hnh 7.60.
Cho
GSS
20 nA I = tng ng vi
GS
10 V V = .







24. Xc nh im-Q bng th ca
mch hnh 7.61(a) bng cch dng
c tuyn truyn t hnh 7.61(b).






-54-
25. Xc nh thng s im-Q cho mch
JFET knh-p nh hnh 7.62.












26. in p o gia mng v t trong mch
hnh 7.63 l 5V, hy xc nh thng s
im-Q ca mch.

27. Xc nh cc gi tr ca
in-Q ca mch JFET
phn cc phn p hnh
7.64.











Mc 2-4 Vng thun tr [ohmic]

28. Mt JFET c phn cc vng thun tr ti mc
DS
0,8 V V = v
D
0, 20 mA I = . Gi tr ca
in tr mng-ngun l bao nhiu?


29. im-Q ca mt JFET thay i t
DS
0, 4 V V = v
D
0,15 mA I = n
DS
0, 6 V V = v
D
0, 45 mA I = . Hy xc nh khong cc gi tr ca
DS
R .


30. Xc nh in dn ca JFET c phn cc ti gc ta bit rng
m0
1, 5 mS g = ;
GS
- 1 V V = ;
v
GS(off )
- 3, 5 V V = .


31. Xc nh in tr mng-ngun ac ca JFET cho bi tp 30.


-55-
Mc 2-5 MOSFET

32. V k hiu mch ca D-MOSFET v E-MOSFET knh-n v knh-p.

33. ch lm vic no D-MOSFET knh-n hot ng vi V
GS
dng.

34. Gii thch s khc nhau c bn gia D-MOSFET v E-MOSFET.

35. Gii thch ti sao c hai loi MOSFET u c in tr vo rt cao ti cng.

Mc 2-6 Cc thng s v h c tuyn ca MOSFET

36. Phiu s liu ca E-MOSFET cho bit l
D(on)
10 mA I =
ti mc
GS
- 12 V V = v
GS(th)
- 3 V V = . Tnh
D
I tng
ng vi
GS
- 6 V V = .



37. Tnh I
DSS
, cho bit l,
D
3 mA I = ;
GS
- 2 V V = , v
GS(th)
- 10 V V = .
38. Phiu s liu ca mt D-MOSFET cho bit
GS(th)
- 5 V V = v
DSS
8 mA I = .
(a) Cu kin ny l knh-p hay knh-n?
(b) Xc nh mc dng
D
I theo cc gi tr ca
GS
V
trong khong t - 5V n + 5V theo bc tng
1V.
(d) V c tuyn truyn t bng cch s dng s
liu t phn (b)


Mc 2-7 Phn cc cho MOSFET

39. Hy xc nh mi D-MOSFET mch hnh
7.65, l c phn cc ch no (ngho;
tng cng; hay phn cc 0).




40. Mi E-MOSFET mch hnh 7.66, c
GS(th)
V
bng + 5V hoc 5V, ty thuc vo cu
kin l knh-n hay knh-p. Hy xc nh
tng MOSFET dn [ON] hay ngng dn
[OFF].







-56-
41. Hy xc nh
DS
V cho mi mch hnh 7.67,
DSS
8 mA I = .








42. Tnh
GS
V v
DS
V cho mi mch E-MOSFET hnh
7.68, Thng s c lit k mi mch.






43. Cn c vo cc gi tr o
GS
V t ng
h trn mch, hy xc nh mc
dng mng v in p mng-ngun
cho mi mch hnh 7.69.



44. Hy xc nh in p cng-ngun thc t
mch hnh 7.70, bng cch tnh t dng r cng,
GSS
I . Cho bit l
GSS
I
bng 50 pA v
D
I bng 1mA cc trng thi phn cc tng ng.


Mc 2-8 IGBT

45. Hy gii thch ti sao IGBT c in tr vo rt cao.


46. Hy gii thch dng collector tng vt tri nh th no to ra trng thi cht-ln [latch-up]
IGBT.


Mc 2-9 Mch khuych i ngun-chung (CS)

47. Mt JFET c g
m
= 6mS. Hy xc nh mc dng mng rms theo mi gi tr rms ca
GS
V sau.
(a) 10mA (b) 150mV (c) 0,6V (d) 1V



48. H s khuych i ca mch khuych i bng JFET vi in tr mc ti cc ngun bng 0 l 20.
Hy xc nh in tr mng nu g
m
bng 3,5mS.



-57-
49. Mt mch khuych i bng JFET c 4, 2 mS
m
g = ;
DS
12 k r' = v
D
4, 7 k R = . H s khuych
i in p ca mch l bao nhiu? Gi thit in tr mc ti cc ngun l 0 O..


50. H s khuych i ca mch khuych i cho bi tp 3 l bao nhiu nu in tr mc ti cc
ngun bng 1 kO?


51. Nhn dng loi FET v mch phn
cc ca FET hnh 8.33.
GS
V l bao
nhiu?


52. Tnh cc mc in p dc trn mi
in cc so vi t ca cc FET
hnh 8.33.



53. Nhn bit c tuyn hnh
8.34, tng ng vi loi FET
no?






54. Tham kho c tuyn truyn t ca JFET hnh 8.18(a) v xc nh tr s nh-nh ca
d
i khi
thay i trong khong 1,5V xung quang gi tr ca im - Q.




55. Lp li bi tp 8 vi cc c tuyn hnh 8.18(b) v hnh 8.18(c).













-58-
56. Mch hnh 8.35, c
D
2,83 mA I = , tnh
DS
V v
GS
V . Thng s ca
JFET l
GS(off )
- 7 V V = v
DSS
8 mA I = .






57. Nu a tn hiu vo 50 mV rms n mch khuych i hnh 8.35,
th mc in p ra nh-nh l bao nhiu? g
m
= 5 mS.


58. Nu ti 1,5 kO c mc u ra ca mch hnh 8.35, th mc in p ra (rms) c trn ti l bao
nhiu khi t tn hiu vo l 50 V rms? g
m
= 5 mS.


59. Hy xc nh h s khuych i in p cho mi mch hnh 8.36.










60. V mch tng ng
dc v ac cho b
khuych i hnh
8.37.
61. Xc nh mc dng
mng trong mch
hnh 8.37, JFET c
DSS
15 mA I = v
GS(off )
- 4 V V = . im-
Q c chn trung
tm vng lm vic.


62. H s khuych i ca mch hnh 8.37, l
bao nhiu nu C
2
c tho ra khi mch.



63. Trong mch hnh 8.37, nu mc song song
vi R
L
mt in tr 4,7kO, th h s in p
l bao nhiu?



-59-
64. Vi mch khuych i ngun-chung (CS) hnh 8.38, hy
xc nh
D
I ,
GS
V v
DS
V c im-Q trung tm.
DSS
9 mA I = , v
GS(off )
- 3 V V = .






65. Nu t tn hiu 10 mV rms vo u vo ca mch khuych i
hnh 8.38, th gi tr hiu dng ca tn hiu ra l bao nhiu?


66. Hy xc nh
GS
V ,
D
I , v
DS
V ca mch khuych i hnh 8.39.

D(on)
18 mA I = o mc
GS
10 V V = ;
GS(th)
2, 5 V V = , v g
m
= 3mS.





67. Hy xc nh
in
R nhn t ngun tn hiu vo mch hnh
8.40.
GSS
25 nA I = tng ng vi
GS
- 15 V V = .








68. Hy xc nh dng sng in p ton b ti cc mng (dc v
ac) v dng sng
out
V hnh 8.41. g
m
= 4,8 mS v
DSS
15 mA I = .






69. Cho mch khuych i khng ti hnh 8.42, tnh
GS
V ,
D
I ,
DS
V , v in p ra hiu dng,
DS
v . Bit
D(on)
8 mA I = ti
GS
12 V V = ;
GS(th)
4 V V = , v g
m
= 4,5mS.






-60-
Mc 2-10 Mch khuych i mng chung CD

70. Cho mch lp li-ngun hay cn gi l SF [Source-
Follower] hnh 8.43, tnh h s khuych i in p v
in tr vo ca mch.
GSS
50 pA I = ti
GS
- 15 V V = ; v g
m

= 5,5 mS.





71. Nu JFET trong mch hnh 8.43, c thay th bng mt JFET khc c g
m
= 3mS, th h s
khuych i v in tr vo l bao nhiu? tt c cc iu kin khc trong mch khng thay i.




72. Tnh h s khuych i cho mi mch hnh 8.44.







73. Xc nh h s khuych i in p cho mi mch
hnh 8.44, khi ti c thay i bng 10 kO.




Mc 2-11 Mch khuych i cng chung CG

74. Mt mch cng chung c g
m
= 4mS v
D
1, 5 k R = .
H s khuych i ca mch l bao nhiu?


75. in tr vo ca mch khuych i bi tp 74 l
bao nhiu?


76. Hy xc nh h s
khuych i in p
v in tr vo ca
mch khuych i
cng chung hnh
8.45.





-61-
77. Cho mch khuych i cascode nh th hin hnh
9.24, 2,8 mS
m
g = ;
GSS
2 nA I = @
GS
15 V V = . Nu
3
15 M R = v 1, 5 mH L = , hy xc nh h s
khuych i in p v tr khng vo tn s
100 MHz f = .










Mc 2-12 Mch khuych i lp D
78. Mch khuych i lp D c tn hiu ra l 9 V. Nu tn hiu vo l 5 mV, th h s khuych i l
bao nhiu ?



79. Mch khuych i lp D tiu tn cng sut l 140 mW b so snh v mch to sng tam gic.
Mi MOSFET h b c st p l 0,25 V trng thi dn [on]. Mch khuych i lm vic t hai
ngun 12 Vdc v cung cp 0,35 V n ti. Hy xc nh hiu sut.




Mc 2-13 Chuyn mch tng t bng MOSFET
80. Mt chuyn mch tng t s dng MOSFET knh-n c
GS(th)
4 V V = . in p + 8 V c t n
cng. Hy xc nh tn hiu vo nh-nh ln nht c th p dng nu st p mng-ngun
c b qua.



81. Chuyn mch tng t c s dng ly mu tn hiu c tn s ln nht l 15 kHz. Hy xc
nh tn s thp nht ca xung c p t vo cng ca MOSFET.



82. Mch t lm chuyn mch s dng t 10 pF. Hy xc nh tn s yu cu . . .



83. Vi tn s 25 kHz, in tr emulated l bao nhiu chuyn mch t nu 0, 001 F C = .

-62-
Mc 2-14 Chuyn mch s bng MOSFET
84. in p u ra ca b o bng CMOS l bao nhiu lm vic vi
DD
5 V V = + , khi tn hiu u
vo l 0 V? Khi tn hiu vo + 5 V?



85. i vi mi t hp tn hiu vo sau y, xc nh tn hiu ra cng NAND bng CMOS hot
ng vi
DD
3, 3 V V = +
(a)
A
0 V V = ;
B
0 V V =
(b)
A
3, 3 V V = ;
B
0 V V =
(c)
A
0 V V = ;
B
3, 3 V V =
(d)
A
3, 3 V V = ;
B
3, 3 V V =

86. i vi mi t hp tn hiu vo sau y, xc nh tn hiu ra cng NOR bng CMOS hot ng
vi
DD
3, 3 V V = +
(a)
A
0 V V = ;
B
0 V V =
(b)
A
3, 3 V V = ;
B
0 V V =
(c)
A
0 V V = ;
B
3, 3 V V =
(d)
A
3, 3 V V = ;
B
3, 3 V V =
87. Lit k hai u im ca chuyn mch cng sut bng MOSFET so vi bng BJT.



Mc 2-15 Sai hng mch FET

88. Mc dng ch th trn ng h o
hnh 7.58(a) gim t ngt v 0. Sai
hng c th c l nh th no?



89. Mc dng ch th trn ng h hnh
7.58(b) tng t bin ln 16mA. Sai
hng c th c l g?



90. Nu in p ngun cung cp mch hnh 7.58(c) ngu
nhin b thay i ln mc 20V, th s ch th trn
ammeter l bao nhiu?



91. in p o ti cc mng ca MOSFET mch hnh 7.66(a)
l + 10V. o th transistor cho thy bnh thng v cc kt
ni t tt. Nguyn nhn no c th gy ra s o trn?



-63-
92. in p o ti cc mng ca MOSFET mch hnh 7.66(b) l 0V. Mch khng c cc ngn mch
v o th transistor cho thy tt. Nguyn nhn no c th d xy ra nhiu nht vi s o trn?



93. Hy cho bit cc du hiu c th c no mi sai
hng sau khi in p tn hiu c t vo mch
hnh 8.46?
(a) Q
1
h mch t cc mng n cc ngun.

(b)
3
R h mch
(c)
2
C b ngn mch
(d)
3
C h mch
(e) Q
2
h mch t cc mng n cc ngun.


94. Nu 10 mV rms
in
v = mch hnh 8.46, th
out
v s l
bao nhiu tng ng vi cc h hng no sau y?
(a)
1
C h mch
(b)
4
C h mch
(c) mt ngn mch t cc ngun ca Q
2
vi t
(d) Q
2
c mt in cc b h mch

BI TP NG DNG H THNG

95. Tham kho hnh 8.58,
v xc nh in p
ca sensor theo mi
gi tr ca pH sau y
(a) 2

(b) 5

(c) 7

(d) 11






96. Da vo h c tuyn truyn t ca BF998 hnh 8.79, hy xc nh thay i
D
I khi in
p phn cc cng 2 c thay i t 6 V xung 1 V, v
G1S
V l 0 V. Mi c tuyn tng ng
vi mt gi tr
G2S
V .








-64-
97. Xt mch hnh 8.61, v v
c tuyn truyn t (
D
I theo
G1S
V ).













98. Tham kho hnh 8.79. Hy xc nh in p ra ca
mch hnh 8.61, nu
G1S Sensor
0 V V V = = v
2
R
c thay i v mc 50 k.













99. t in p 100mVrms c tn
s 1kHz vo im o s 1
hnh 8.47. Ti im o s 5
o c in p dc l 6,75V,
nhng khng c in p ac
ti im o ny. Hy xc
nh li duy nht trong mch.














-65-
100. Gi thit li bi tp 99 ca mch hnh 8.47, c khc phc v in p tn hiu vo c
tng ln mc 250 mV rms. Nu cc in p sau y l c o ti cc im o th quy nh, hy
xc nh li c th c v tnh trng hng cn phi tin hnh sa cha mch l g?
im o th s 2: 250 mV rms

im o th s 3: 800 mV rms

im o th s 4: 530 mV rms

im o th s 5: 2,12 V rms


101. Gi thit cc li trn y tromg mch hnh 8.47, c khc phc. Hy xc nh cc mc in
p dc v ac s phi o c ti im o s 5 nu transistor ca tng th nht c
DSS
2,85 mA I =
v g
m
= 2.2 mS v transistor ca tng th 2 c
DSS
5,10 mA I = v g
m
= 2,6mS. Tn hiu vo l
100 mV rms.







BI TP V THNG S CA FET

102. FET c s hiu 2N5457 l loi cu kin g?

103. Tham kho phiu s liu hnh 7.14, xc nh cc thng s sau:
(a)
GS(off )
V thp nht ca 2N5457.

(b) in p mng-ngun ln nht ca 2N5457.

(c) Mc tiu tn cng sut ln nht ca 2N5457 ti nhit mi trng l 25C.

(d) in p ngc cng-ngun ln nht ca 2N5458.

104. Tham kho phiu s liu hnh 7.14, xc nh mc tiu tn cng sut ln nht ca 2N5457
nhit mi trng 65C.

105. Tham kho phiu s liu hnh 7.14, xc nh g
m0
ca 2N5457 ti tn s 1kHz.


106. Tham kho phiu s liu hnh 7.14, mc dng mng in hnh ca 2N5457 khi
GS
0 V V = l bao
nhiu? .

-66-


107. Tham kho phiu s liu hnh 7.41, hy xc nh in p cng-ngun thp nht m MOSFET
bt u dn dng? .

108. Tham kho phiu s liu hnh 7.41, mc dng mng l bao nhiu khi
GS
10 V V = ?

109. Tham kho phiu s liu hnh 7.52, xc nh dng mng I
D
chy trong 2N3797 khi
GS
+ 3 V V =
Tnh
D
I tng ng vi
GS
- 2 V V = .
-67-
110. Tham kho phiu s liu hnh 7.52, h dn thun ln nht ca 2N3796 thay i trn khong
tn s tn hiu t 1kHz n 1MHz l bao nhiu?

111. Tham kho phiu s liu hnh 7.52, hy xc nh gi tr in hnh ca in p cng-ngun
tng ng khi 2N3796 chuyn sang ngng dn.






































-68-
112. FET c s hiu 2N3796 l FET kiu g?
113. Tham kho phiu s liu hnh 8.30, xc nh cc thng s sau:
(a) V
GS(off)
in hnh ca 2N3796.

(b) in p mng-ngun ln nht ca 2N3797

(c) Mc tiu tn cng sut ln nht ca 2N3797 ti nhit mi trng l 25C

(d) in p cng-ngun ln nht ca 2N3797

114. Tham kho phiu s liu hnh 8.30, xc nh mc tiu tn cng sut ln nht ca 2N3796 ti
nhit mi trng l 55C.


115. Tham kho phiu s liu hnh 8.30, xc nh g
m0
nh nht ca 2N3796 ti tn s l 1kHz.

116. Dng mng ca 2N3797 l bao nhiu khi
GS
+3, 5 V V = ?
-69-
117. Dng mng c trng ca 2N3796 l bao nhiu khi c phn cc 0?
118. H s khuych i in p c th c ln nht ca mch khuych i ngun-chung bng 2N3796 l
bao nhiu vi
D
2, 2 k R = ?

BI TP NNG CAO

119. Tnh
DS
V v
GS
V trong mch hnh 7.71, bng cch s dng cc gi tr nh
nht ca cc thng s cn thit cho phiu s liu.




120. Tnh
D
I v
GS
V trong mch hnh 7.72.




121. Xc nh khong cc gi tr im-Q c th c t nh nht n ln nht cho
mch hnh 7.71.


122. Tnh in p mng-ngun cho cc mch cm bin pH hnh 8.59,
khi pH o c bng 5. Gi s cc bin tr l c thit lp
to ra mc 4 V ti cc cc mng khi pH c o bng 7.





123. Thit k mch MOSFET vi phn cc 0, s dng 2N3797 hot ng bng ngun cung cp + 9V
dc to ra
DS
V bng 4,5V. Dng mng ln nht chy t ngun l 1mA.















-70-
124. Thit k mch bng E-MOSFET vi cc thng s phiu s liu nh sau:
DS(on)
500 mA I = @
GS
10 V V = v
GS(th)
1 V V = . S dng ngun cung cp dc +12V, vi phn cc phn p to ra
in p + 8V ti cc mng v dng ln nht t ngun cung cp l 20mA.










125. MOSFET trong mt mch khuych i ngun-chung, n tng c khong cc gi tr h dn
thun t 2,5 mS n 7,5 mS. Nu mch khuych i ghp tng bng t vi ti c th thay i
c trong khong t 4 kO n 10 kO v in tr mng dc l 1,0 kO, hy xc nh cc h s
khuych i nh nht v ln nht.









126. Thit k mch khuych i s dng 2N3797 lm vic vi ngun cung cp l 24 V. in p mng-
ngun dc in hnh cn phi xp x 12 V v h s khuych i in p in hnh cn phi vo
khong bng 9.













127. Sa i li mch c thit k bi tp 126, c h s khuych i in p c th thit lp
mc bng 9 cho bt k transistor 2N3797 no c la chn mt cch ngu nhin.







-71-























BI TP B SUNG PHN FET

128. Thit k mch khuych i chung cc ngun-Common Source (CS) bng JFET c R
L
=
10kO, V
DD
= 12V, R
in
= 500kO, v A
v
= - 2. S dng mch hnh 4.16a. Chn im-Q l V
DSQ
=
6V, V
GSQ
= - 1V, I
DQ
= 1mA, v g
m
= 2500S.
[p s:
1 2
= 4, 78 k; =1, 22 k; = 509 k; = 27 M;& - 100
D S i
R R R R A = ]
























129. Thit k li mch khuych i CS bng JFET bi tp 128, nu dng transistor c V
GSoff
= - 4V
v I
DSS
= 6mA.
[p s:
1 2 dc ac
= 500 k; = ; =1, 61 k; = 390 ; = 223 ;& - 100
D S S i
R R R R R A = ]





















-72-






























130. Thit k mch khuych i CD bng JFET (hnh 4.19) cho h s khuych i dng in bng
15 cho ti l R
L
= 20kO s dng V
DD
= 12V v R
in
= 400kO. S dng JFET knh-n c
V
GSoff
= - 3V, v I
DSS
= 6mA. Gi s V
DSQ
= V
DD
/2 v I
DQ
= 0,4I
DSS
. Tnh tr s ca cc in tr
v h s khuych i in p ca mch khuych i.
[p s:
dc ac 1 2
= 2,5 k; =1, 25 k; = 676 k; = 980 k;& 0, 75
S S i
R R R R A = ]
















131. Xc nh tr s ca cc in tr v h s khuych i dng in cho
mch khuych i bootstrap bng JFET kiu SF theo cc yu cu
l R
in
= 200kO, R
L
= 20kO, v V
DD
= 10V. im- Q c chn
ti: V
DSQ
= 5V, I
DQ
= 0,5mA, V
GSQ
= - 1,5V, g
m
= 4mS. S dng
mch hnh 4.21.
[p s:
G 1 2
= 62,8 k; = 3 k; = 7 k; 9,3
S S i
R R R A = ]

























-73-













132. Cho mch hnh P4.1a, vi JFET knh-n c th c cc thng s xp x bng phng trnh:
i
D
= 0,5(4 + v
GS
)
2
mA
v R
S
= 500O, R
D
= 2kO, R
in
= 100kO, I
DQ
= 5mA, v V
DD
= 20V. Hy xc nh cc thng s
ca mch sau:
(a) V
GSQ
; (b) V
D
; (c) V
DSQ
; (d) R
1
v

R
2
.
[p s:
1 2 dc
(a) - 0,84 V; (b) 10 V; (c) 7,5 V; = 109 k; =1, 2 M; = 390
S
R R R ]























133. Trong mch hnh 4.16a, khi c R
1
= 21kO, R
2
= 450kO, R
S
=
500O, R
D
= 1,5kO, R
L
= 4kO, v V
DD
= 12V, khi V
DSQ
= 4V, hy
xc nh cc thng s sau y:
(a) I
DQ
; (b) V
GSQ
; (c) R
in
; (d) A
v
khi g
m
= 3,16mS; (e) A
i
.



-74-


















134. Trong mch hnh 4.16a, R
D
= 2kO, R
L
= 5kO, R
in
= 100kO, R
S
=
300O, v V
DD
= 15V. Xc nh cc tr s ca R
1
v R
2
cn thit
transistor lm vic mc 4mA khi V
GSoff
= - 4V v I
DSS = 8mA.
Tnh h s khuych i in p v dng in ca mch khuych
i.














135. ( a) Thit k mch khuych i chung
cc ngun [Common-Source tc
CS] (hnh P4.1) s dng JFET
knh-p p ng cc thng s yu
cu l A
v
= - 10 v R
in
= 20kO.
Gi thit l im-Q c chn ti
I
DQ
= - 1mA, V
DSQ
= -10V, V
GSQ
= 0,5V.
(b) Tnh A
i
, R
1
, R
2
, R
S
, v R
D
. (Da
vo c tuyn hnh P4.2. Lu
rng c th c chia tch R
S v
mch r cho R
S
).
[p s:
c dc 2
= 338 ; = 500 ; = 9,5 k; - 21,1; =
Sa S D i
R R R A R = ]






















-75-






136 . Lp li bi tp 135 khi R
L
l 20kO; c ghp vo cc mng qua mt t ghp tng. Ch l, c
th cn phi chn im-Q khc.
























137. Thit k mch khuych i CS s dng MOSFET nh mch hnh
P4.3. Cho R
L
= 1kO, A
v
= - 1, R
in
= 15kO. im-Q c chn
ti V
GSQ
= 3V, I
DQ
= 7mA, V
DSQ
= 10V, trong g
m
= 2300S.
Xc nh tr s cho tt c cc cu kin cn li.





























-76-







138. Thit k mch khuych i CS s dng JFET knh-n cho kiu mch
nh hnh P4.4, vi A
v
= - 1, V
DD
= 12V, R
L
= 1kO, R
in
= 15kO,
I
DSS
= 10mA, v V
GSoff
= - 4V. S dng I
DQ
= I
DSS
/ 2.
[p s:
2
= 208 ; = 234 ; = 966 ; - 15; =
Sac Sdc D i
R R R A R = ]




















139. Thit k mch khuych i CS s dng JFET knh-n khi c R
L
=
4kO, A
v
= - 3, v R
in
= 50kO. Gi s l transistor s dng c
V
GSoff
= - 4,2V v I
DSS
= 6mA. S dng mch nh hnh P4.4 vi
V
DD
= 20V. Xc nh A
i
.



























-77-




140. Thit k mch khuych i CS bng JFET knh-n c A
V
= -2, A
i
=
-20, V
DD
= 12V, v R
L
= 5kO. Xc nh tr s ca tt c cc cu
kin v mc cng sut nh mc ca transistor. (mch c th cn
phi thay i p ng thit k). Transistor c chn c:
V
GSoff
= - 5V v I
DSS
= 8mA. S dng I
DQ
= 0,4I
DSS
v V
DSQ
=
V
DD
/2. Tham kho mch nh hnh P4.4.


























141. Thit k mch khuych i CS bng JFET knh-p vi A
V
= - 4, A
i
= - 40, R
L
= 8kO, v V
DD
= - 16V. Transistor c chn c
V
GSoff
= 3V v I
DSS
= - 7mA, s dng I
DQ
= 0,3I
DSS
v V
DSQ
=
V
DD
/2. S dng mch hnh P4.4. Xc nh cng sut nh mc ca
transistor.
[p s: =1,36 V; = 2,55 mS; = 648 ;
GSQ m Sdc
V g R

trans 2
=174 ; =16,8 mW; =
Sac
R P R ]





















-78-






142. Thit k mch khuych i CS bng JFET knh-p vi ti l 5kO,
s dng mch t ng t nh hnh P4.4. Cho V
DD
= - 20V, A
V
= - 2, A
i
= - 20, V
GSoff
= 6V v I
DSS
= - 5mA. Xc nh cng sut
nh mc ca transistor.























143. Thit k mch khuych i chung cc ngun (CS) bng
MOSFET knh-n, s dng transistor 3N128 (ph lc D trang 90-
92) cho ti l 10kO vi h s khuych i in p A
v
= - 10. S
dng mch hnh P4.3. Chn im-Q khi R
in
> 10kO, bng cch
s dng h c tuyn th hin theo cc thng s k thut trang
cui ca phn bi tp ny.











-79-










144. Thit k mch khuych i bng MOSFET knh-n, chung cc
ngun (CS) s dng transistor 3N128 (ph lc D trang 92-94)
cho ti l 2kO vi A
v
= - 4 v R
in
> 100kO. Gi s rng, im-Q
c chn l V
GSQ
= - 0,6V, V
DSQ
= 10V, I
DQ
= 10mA, V
DD
= 20V. Xem mch hnh P4.3.
[p s:
2
= 940 ; = 25 ; = 60 ; =
D Sac Sdc
R R R R ]



















145. Phn tch mch khuych i CS bng JFET knh-n nh mch
hnh P4.5, khi c ti l 20kO, R
D
= 8kO, V
DD
= 24V, v R
in
=
50kO. Chn im-Q c V
GSQ
= - 1,5V, V
DSQ
= 12V, I
DQ
= 1mA,
v g
m
= 2,83mS. Hy tnh A
i
, A
v
v tr s ca tt c cu kin.














-80-


















146. Nu R
S
mch hnh P4.4, c r mch bng t, th h s
khuych i in p l bao nhiu ? Gi s rng im-Q c
chn c g
m
= 1,5mS, R
D
= 3,2kO, v R
L
= 5kO. Xc nh h s
khuych i dng in khi R
S
= 500O, R
1
= 200kO, v R
2
=
800kO.


























147. H s khuych i in p A
v
ca mch hnh P4.4, l bao nhiu
nu tn hiu c cung cp vo mch khuych i c in tr ca
ngun in p l R
i
= 10kO? Cho R
D
= 10kO, v R
L
= 10kO, R
S
=
500O, g
m
= 2mS, R
1
= 25kO, v R
2
= 120kO.














-81-
















148. Cho mch nh hnh P4.6, gi s rng R
S
c r mch bng mt
t in. V
DD
= 15V, R
D
= 2kO, R
L
= 3kO, R
S
= 200O, R
1
=
500kO, I
DSS
= 8mA, v V
GSoff
= - 4V. Hy xc nh A
v
, A
i
, R
in
, v
im-Q cho mch khuych i.

[p s: = - 0,94 V; = - 3, 67; = - 612
GSQ v i
V A A ]






















149. Cho mch hnh P4.6, gi s rng V
DD
= 20V; R
D
= 2kO; R
L
= 10kO;
R
S
= 200O; R
1
= 1MO; I
DSS
= 10mA, v V
GSoff
= -5V. Hy xc
nh im-Q, A
v
, A
i
, R
in
, v cho mch khuych i.









-82-














150. Cho mch hnh P4.6, gi s rng V
DD
= 20V, R
D
= 2kO, R
L
= 6kO,
R
S
= 100O, R
1
= 1MO, I
DSS
= 10mA, v V
GSoff
= - 5V. Hy xc
nh im-Q, A
v
, A
i
, R
in
, v cho mch khuych i.




























151. Cho mch khuych i CS nh hnh P4.1a, s dng JFET c
I
DSS
= 2mA, v g
m0
= 2000S. Nu tr s ca R
D
= 10kO, R
S
=
200O, th h s khuych i in p A
v
l bao nhiu i vi cc
gi tr ca V
GSQ
sau y?
(a) V
GSQ
= 1V; (b) V
GSQ
= 0,5V; (c) V
GSQ
= 0V.
[p s: (a) - 8,33 V;(b) - 11,5;(c) - 14,3 ]






-83-












152. Mch khuych i CS hnh P4.6, vi transistor c V
GSoff
= -
4V, I
DSS
= 4mA, v r
DS
= 500O. Nu R
D
= 2kO, R
L
= 4kO, v
R
S
= 200O, th h s khuych i in p A
v
ca mch l bao
nhiu vi V
GSQ
= - 1V ? A
v
s nh th no khi r
DS
t n v cng?






















153. Thit k mch khuych i CS bng MOSFET knh-n nh mch
hnh P4.3, khi c R
L
= 4kO, A
v
= - 5, v A
i
= - 10. Gi s rng,
im-Q chn c V
DSQ
= 10V, V
GSQ
= 4V, I
DQ
= 2mA, v g
m
=
4000S.



















-84-



















154. Cho mch nh hnh P4.7, c R
i
= 50kO, R
1
= 100kO, R
2
=
800kO, R
D
= 4kO, R
L
= 6kO, R
S
= 200O, v V
DD
= 20V,
xc nh cc thng s sau khi s dng FET c V
DSQ
=
6V, g
m
= 2,5mS:
(a) I
DQ
, V
GG
, v V
GSQ;
(b) A
v
, R
in
, v A
i
.
[p s: (a) = 1,55 V; (b) - 3,84; (c) 88,9 k ; (d) - 88,9
GSQ
V O ]





















155. Cho mch nh hnh P4.7, nu loi b R
2
, transistor FET
lm vic mc dng l 2mA. Tr s ca cc cu kin l
R
i
= 100kO, R
1
= 400kO, R
D
= 3kO, R
L
= 5kO, v V
DD
=
12V. Xc nh cc thng s sau khi s dng transistor c
I
DSS
= 8mA, v V
GSoff
= - 4V:
(a) R
S
; (b) A
v
, R
in
, v A
i
.


















-85-




156. Thit k mch khuych i lp li-cc ngun (SF)
bng JFET knh-p nh hnh P4.8, vi R
in
= 20kO,
nhn c h s khuych i in p A
v
gn
bng 1. Tnh A
i
, R
1
, R
2
, v R
S
. S dng h c
tuyn cho hnh P4.2.



























157. Lp li bi tp 156, khi c ti l 20kO c ghp t vi mch khuych i.
[p s:
1 2
= 18, 2 k ; = 0, 92; = 37 k ; = 43, 5 k
S i
R A R R O O O]




-86-






158. Thit k mch khuych i bng MOSFET kiu mng-chung (CD)
khi c R
L
= 100O, A
i
= 200, v R
in
= 100kO. S dng transistor c
V
GSoff
= - 6V v I
DSS
= 20mA. Xc nh A
v
v gi tr ca tt c cc
in tr. Mch s dng hnh P4.9.

























159. Thit k mch khuych i CD bng MOSFET knh-n, trong R
in
= 120kO, A
i
= 100, R
L
= 500O, V
DD
= 20V, v chn transistor c
V
GSoff
= - 5V v I
DSS
= 15mA. S dng mch hnh P4.9, vi I
DQ
= 0,6I
DSS
v V
DSQ
= V
DD
/2.











-87-




160. Thit k mch khuych i lp li cc ngun (SF) s dng JFET knh-n cho h s
khuych i dng l 100 v in tr vo l 500kO. Ti l 2kO. Chn im-Q theo cc tham s
l: V
DSQ
= 8V, I
DQ
= 5mA, V
GSQ
= - 1V, v g
m
= 4mS. Xc nh cc in tr, h s khuych i
in p v v mch khi V
DD
= 10V.
[p s:
1 2
= 556 k ; = 5 M R R O O]





























161. Lp li bi tp 160 nhng bng transistor khc vi gi tr ca cc thng s l:
V
GSoff
= -3V, I
DSS
= 10mA.

-88-




162. Thit k mch nh hnh 4.21, khi c V
DD
= 16V v R
L
= 8kO. S dng transistor c V
GSoff
= - 3,33V, I
DSS
=
10mA. Xc nh ton b tr s ca cu kin, A
i
, v A
v
khi
c R
in
= 12kO.























163. Da vo bi tp 162, xc nh ton b tr s ca cu kin, A
i
, v A
v
khi c R
in
= 200kO .
[p s:
1 2
= 50, 9 k ; = 21,1; = 0,844; = 200 ; = 1400
G i v S S
R A A R R O O O]








-89-
Ph lc D: Trang s liu ca hng ch to
(Appendix D: Manufacturers Data Sheets)






-90-


-91-










-92-












-93-









-94-











-95-


-96-









-97-























-98-

TM TT NI DUNG V BJT & MCH

3-1. BJT (Bipolar junction transistor) c cu to bng ba vng: base, collector, v emitter.
BJT c hai tip gip pn, tip gip base-emitter v tip gip base-collector.
Dng in chy trong BJT bao gm c dng cc in t t do v dng cc l trng, thut ng
bipolar th hin nh vy.
Vng base l rt mng v c pha tp long so vi cc vng collector v emitter.
Hai loi BJT l npn v pnp.
3-2. lm vic nh mt b khuych i, tip gip base-emitter cn phi c phn cc-thun v
tip gip base-collector cn phi c phn cc-ngc. iu ny c gi l phn cc thun-
ngc.
Ba dng in chy trong transistor l dng base (
B
I ), dng emitter (
E
I ), v dng collector
(
C
I ).

B
I l rt nh so vi
C
I v
E
I .
3-3. H s khuych i dng dc ca transistor l t s ca
C
I i vi
B
I v c k hiu l
DC
| . Cc
tr s in hnh trong khong t di 20 n vi trm.

DC
| thng c xem nh
FE
h trang s liu ca transistor.
T s ca
C
I vi
E
I c gi l
DC
o . Cc gi tr in hnh trong khong t 0,95 n 0,99.
C s bin thin
DC
| theo nhit v cng nh t mt transistor ny n transistor khc
cng mt loi transistor.
3-4. Khi transistor c phn cc-thun, h s khuych i in p ph thuc vo in tr emitter
trong (in tr ni) v in tr collector ngoi.
H s khuych i in p l t s ca in p ra vi in p vo.
Cc in tr trong ca transistor c th hin bng ch in thng r.
3-5. Transistor c th lm vic nh mt chuyn mch in t vng ngng dn v dn bo ha.
vng ngng dn, c hai tip gip pn u c phn cc-ngc v v c bn khng c dng
collector. Xt mt cch l tng, transistor ng vai tr nh mt chuyn mch h gia
collector v emitter.
vng bo ha, c hai tip gip pn u c phn cc-thun v dng collector l ln nht. Xt
mt cch l tng, transistor ng vai tr nh mt chuyn mch kn gia collector v emitter.
3-6. Trong phototransistor, dng base c to ra bng nh sng chiu vo.
Phototransistor c th l cu kin hai-in cc hoc cu kin ba in-cc.
Optocoupler gm mt LED v photodiode hoc phototransistor.
Optocoupler c s dng cc mch cch ly v in.
3-7. C nhiu kiu ng v transistor bng v nha [plastic], v kim loi, hay v gm.
Hai kiu v c bn l kiu xuyn-l [through-hole] v dn b mt.
3-8. Nn kim tra transistor trong-mch trc khi tho transistor.
Cc li thng thng trong cc mch transistor l cc tip gip h mch,
DC
| thp, cc dng r
vt qu mc cho php, v h mch hoc ngn mch bn ngoi transistor trong bng mch.









-99-








E C B
I I I = + (3-1) Cc dng in ca transistor.

C
DC
B
I
I
| = (3-2) H s khuych i dng DC.

BE
0, 7 V V ~ (3-3) in p base-emitter (silicon).

BB BE
B
B
V V
I
R

= (3-4) Dng base.

CE CC C C
- V V I R = (3-5) in p collector-emitter (emitter-chung).

CB CE BE
- V V V = (3-6) in p collector-base.

C
v
e
R
A
r'
~ (3-7) H s khuych i in p gn ng (khng ti).

CE(cutoff ) CC
V V = (3-8) iu kin ngng dn.

CC CE(sat)
C(sat)
C
V V
I
R

= (3-9) Dng collector bo ha.

C(sat)
B(min)
DC
I
I
|
= (3-10) Dng base nh nht transistor dn bo ha.

C DC
I I

| = (3-11) Dng collector ca phototransistor.

-100-

Cu hi v cu to , nguyn l & mch BJT

1. Ba in cc ca BJT c gi l
(a) p, n, p (b) n, p, n (c) u vo, u ra, t (d) base, emitter, collector.

2. Trong cu to ca transistor pnp, cc vng p l
(a) base v emitter (b) base v collector (c) emitter v collector


3. lm vic nh mt b khuych i, base ca transistor npn cn phi
(a) dng so vi emitter(b) m so vi emitter(c) dng so vi collector (d) 0V


4. Dng emitter s lun lun
(a) ln hn so vi dng base (b) nh hn so vi dng collector
(c) ln hn so vi dng collector (d) gm c (a) v (c)


5.
DC
| ca transistor l . . . . . . . . . ca transistor
(a) h s khuych i dng (b) h s khuych i p
(c) h s khuych i cng sut (d) in tr trong


6. Nu
C
I ln hn 50 ln so vi
B
I , th
DC
| bng
(a) 0,02 (b) 100 (c) 50 (d) 500


7. in p xp x trn tip gip base-emtter khi c phn cc thun ca BJT silicon l
(a) 0V (b) 0,7V (c) 0,3V (d)
BB
V



8. Trng thi phn cc thun cho transistor c s dng nh mt b khuych i tuyn tnh
c gi l
(a) thun-ngc (b) thun-thun (c) ngc-ngc (d) phn cc collector



9. Nu in p ra ca mch khuych i bng transistor l 5 V rms v in p vo l 100mV rms,
th h s khuych i in p l
(a) 5 (b) 500 (c) 50 (d) 100



10. Khi ch in thng r' c s dng lin quan n transistor, th n tng ng vi
(a) in tr nh (b) in tr ca dy dn;(c) in tr trong ac (d) in tr ngun.



11. Trong mt mch khuych i cho,
C
= 2, 2 k R ; v 20
e
r' = , th h s khuych i in
p bng
(a) 2,2 (b) 110 (c) 20 (d) bin tr



12. Khi c phn cc hot ng vng ngt v bo ha, transistor c chc nng nh mt
(a) b khuych i tuyn tnh (b) chuyn mch (c) t in c th thay i (d) bin tr



13. vng ngng dn,
CE
V s l
(a) 0V (b) thp nht (c) cao nht
(d) bng vi
CC
V (e) c (a) v (b) (e) c (c) v (d)

-101-

14. vng bo ha,
CE
V l
(a) 0,7V; (b) bng vi
CC
V ; (c) thp nht; (d) cao nht.

15. bo ha BJT cn phi c
(a)
B C(sat)
I I = ; (b)
B C(sat) DC
I I | > ;(c)
CC
V cn phi thp nht=10V; (d) emitter phi ni t

16. Khi BJT hot ng vng bo ha, dng base tng s
(a) lm tng dng collector; (b) dng collector khng nh hng;
(c) lm gim dng collector; (d) transistor chuyn sang ngng dn.


17. Trong mt phototransistor, dng base l
(a) c thit lp bng in p phn cc; (b) t l thun vi cng nh sng;
(c) t l nghch vi cng nh sng; (d) ngoi yu t trn.

18. Phng trnh gia dng collector v dng base c to ra do nh sng trong phototransistor
l
(a)
C DC
I I

| = ; (b)
C DC
I I

o = ; (c)
C
I I

= ; (d)
DC
2
C
I I

| = .

19. Mt optocoupler thng bao gm
(a) 2 LED; (b) mt LED v mt photodiode;
(c) mt LED v mt phototransistor; (d) c (b) v (c).

20. Trong mch khuych i nu tip gip base-emitter b h mch, th in p collector l
(a)
CC
V ; (b) 0V; (c) khng xc nh; (d) 0,2V.

21. Khi o bng DMM trn mt tip gip ca transistor b t (h mch) s th hin
(a) 0 V; (b) 0,7V; (c) OL; (d)
CC
V .

22. Tr s dng collector ln nht trong transistor c phn cc l
(a)
DC B
I | ; (b)
C(sat)
I ;

(c) ln hn dng
E
I ; (d)
E B
I I .


23. Xt mt cch l tng, ng ti dc l ng thng v trn h c tuyn collector gia
(a) im-Q v vng ngt; (b) im-Q v vng bo ha;
(c)
CE(cutoff )
V v
C(sat)
I ; (d)
B
0 I = v
B C DC
I I | = .



24. Nu t in p sinusoudal vo base ca transistor npn c phn cc v to ra in p dng sin
trn collector b xn gn mc 0 volt, th transistor l
(a) b iu khin vo trng thi bo ha; (b) b iu khin vo trng thi ngt;
(c) ang hot ng vng phi tuyn; (d) c (a) v (c); (e) c (b) v (c).


25. in tr vo ti base ca transistor c phn cc ph thuc ch yu vo
(a)
DC
| ; (b)
B
R ; (c)
E
R ; (d)
DC
| v
E
R .


-102-

26. Trong mch transistor phn cc phn p nh hnh 5.13, R
IN(base)

thng c th c b qua trong cc tnh ton khi
(a)
IN(base) 2
R R > ; (b)
2 IN(base)
10 R R > ;
(c)
IN(base) 2
10 R R > ; (d)
1 2
R R << .


27. Trong mt mch transistor phn cc phn p,
B
2, 95 V V = . in p
emitter dc vo khong
(a) 2,25 V; (b) 2,95 V; (c) 3,65 V; (d) 0,7 V.


28. Mch phn cc phn p c c im l
(a) c th ph thuc vo
DC
| ; (b) v c bn c th xem khng ph thuc vo
DC
| ;
(c) khng c s dng rng ri; (d) cn t linh kin so vi tt c cc phng php khc.


29. Mch phn cc emitter l
(a) v c bn l c lp vi
DC
| ; (b) ph thuc nhiu vo
DC
| ;
(c) cho im phn cc n nh; (d) gm c (a) v (c).


30. Trong mch phn cc emitter,
E
= 2, 7 k R ; v
EE
15 V V = , th dng emitter bng
(a) 5,3 mA; (b) 2,7 mA; (c) 180 mA; (d) khng th xc nh c



31. Nhc im ca kiu phn cc base l
(a) mch rt phc tp; (b) mch cho h s khuych i thp;
(c) mch qu ph thuc nhiu vo beta; (d) mch cho dng r cao.


32. Mch phn cc hi tip-collector c c im l
(a) da vo nguyn l hi tip dng; (b) da vo php nhn beta;
(c) da vo nguyn l hi tip m; (d) n nh rt km.


33. Trong mch npn phn cc phn p, nu in tr phn p pha trn (in tr ni vi
CC
V ) h mch
(a) transistor s chuyn vo ngng dn; (b) transistor s chuyn vo dn bo ha;
(c) transistor s chy; (d) in p ngun cung cp l qu cao.


34. Trong mch npn phn cc phn p, nu in tr phn p pha di (in tr ni t) h mch
(a) transistor khng nh hng; (b) transistor s c li vo ngng dn;
(c) transistor s c li vo dn bo ha; (d) dng collector s gim.



35. Trong mch transistor pnp phn cc phn p, khi khng c dng base m in p base xp x gi
tr ng. Sai hng c th xy ra nht l
(a) mt in tr phn cc b h mch; (b) in tr collector b h mch;
(c) tip gip base-emitter h mch; (d) in tr emitter h mch;
(e) c (a) v (c); (f) gm c (c) v (d).

-103-

36. Mch khuych i tn hiu nh
(a) s dng ch mt phn nh ng ti ca mch khuych i;
(b) lun lun cho mc tn hiu ra trong khong mV;
(c) s chuyn vo dn bo ha theo mi chu k tn hiu vo;
(d) lun lun phi l mch emitter-chung.


37. Thng s h
fe
tng ng vi
(a)
DC
| ; (b)
ac
| ;

(c)
e
r' ; (d)
c
r'
.


38. Nu dng emitter dc trong mt mch khuych i bng transistor l 3mA, th tr s gn ng ca
,
e
r
s l
(a) 3 kO; (b) 3 O; (c) 8,33 O; (d) 0,33 kO.


39. Mch khuych i emitter-chung c h s khuych i in p l 100. Nu tho t r mch emitter
ra khi mch, th
(a) mch s tr nn khng n nh; (b) h s khuych i in p s gim;
(c) h s khuych i in p s gim; (d) im-Q s b dch chuyn.


40. Cho mch khuych i emitter-chung c
C
=1, 0 k R ; 15
e
r' = ; v
ac
75 | = . Gi thit rng,
E
R l c r mch ton b ti tn s lm vic, h s khuych i in p l
(a) 66,7 (b) 2,56 (c) 2,47 (d) 75



41. Trong mch bi tp 40, nu tn s c gim xung n mc m
C(bypass) E
X R = , th h s
khuych i
(a) s vn khng i; (b) s thp hn; (c) s ln hn



42. Trong mch khuych i emitter-chung, phn cc phn p,
in(base)
= 68 k R ;
1
= 33 k R , v
2
=15 k R . Tng in tr vo s l
(a) 68 kO; (b) 8,95 kO; (c) 22,2 kO; (d) 12,3 kO.



43. Trong mch khuych i CE c ti 10 kO. Nu
C
= 2, 2 k R
;
v 10
e
r' = ; h s khuych i
in p vo khong
(a) 220; (b) 1000; (c) 10; (d) 180.



44. Cho mch khuych i collector-chung c
E
=100 R ; 10
e
r' = ; v 150
ac
| = . in tr vo ac
ti base l
(a) 1500 O; (b) 15 kO; (c) 110 O; (d) 16,5 kO.

-104-

45. Nu t tn hiu 10 mV vo base ca mch lp li emitter bi tp 44, th mc tn hiu ra xp x
bng
(a) 100 mV; (b) 150 mV; (c) 1,5 V; (d) 10 mV.


46. Trong mch lp li emitter, h s khuych i dng l 50. H s khuych i cng sut xp x
bng
(a) 50
v
A ; (b) 50; (c) 1 ; (d) c (a) v (b).


47. cu hnh cp darlington, mi transistor c beta ac l 125. Nu
E
R l 560O, th in tr vo s
l
(a) 560 O; (b) 70 kO; (c) 8,75 MO; (d) 140 kO.


48. in tr vo ca mch khuych i base-chung l
(a) rt thp; (b) rt cao; (c) nh mch CE; (d) nh mch CC.


49. Mi tng ca b khuych i bn tng c h s khuych i in p bng 15. H s khuych i
in p ton b l
(a) 60; (b) 15; (c) 50,625; (d) 3078.


50. H s khuych i ton b cu bi tp 49 c th tnh theo decibel l
(a) 94,1 dB; (b) 47,0 dB; (c) 3,65 dB; (d) 69,8 dB.


51. Mch khuych i vi sai
(a) c dng trong cc op-ams; (b) c mt u vo v mt u ra;
(c) c hai u ra; (d) c (a) v (c).


52. Khi mch khuych i vi sai lm vic kiu u ra-n,
(a) u ra c ni t;
(b) mt u vo c ni t v tn hiu s c t vo u vo cn li;
(c) c hai u vo c ni vi nhau;
(d) tn hiu ra khng b o pha.


53. kiu hot ng vi sai u ra-kp ca mch khuych i vi sai l
(a) cc tn hiu ngc cc tnh s c t vo cc u vo;
(b) h s khuych i bng 1;
(c) cc tn hiu ra c bin vi sai;
(d) ch s dng mt ngun cung cp.


54. kiu hot ng kiu-chung (ng pha) ca mch khuych i vi sai,
(a) c hai u vo c ni t; (b) c hai u ra c ni vi nhau;
(c) cng mt tn hiu vo ti hai u vo; (d) hai tn hiu ra l ng pha.



-105-

55. Mt mch khuych i hot ng vng tuyn tnh ti mi thi im l
(a) ch A; (b) ch AB; (c) ch B; (d) ch C.


56. Mt mch khuych i cng sut phn b 5 W n ti vi cng sut tn hiu vo bng 100 mW.
H s khuych i cng sut l
(a) 100 ; (b) 50; (c) 250; (d) 5.


57. Mc dng nh ca mch khuych i cng sut lp A c th phn b cng sut n ti ty thuc
vo
(a) nh mc ln nht ca ngun cung cp; (b) dng tnh;
(c) dng chy trong cc in tr phn cc; (d) kch thc ca cnh tn nhit.


58. c tn hiu ra ln nht, mch khuych i cng sut lp A cn phi duy tr gi tr dng tnh l
(a) mt na mc dng ti nh; (b) gp hai ln mc dng ti nh;
(c) t nht phi ln hn mc dng ti nh; (d) ch cn cao hn gi tr dng vng ngt.


59. Mt mch khuych i cng sut lp A c
CE
12 V V = v
CQ
1 A I = . u ra c cng sut tn hiu
ln nht bng
(a) 6 W ; (b) 12 W; (c) 1 W; (d) 0,707 W.


60. Hiu sut ca mch khuych i cng sut l t s ca cng sut phn b n ti vi
(a) cng sut tn hiu vo; (b) cng sut tiu tn tng trc;
(c) cng sut t ngun cung cp dc; (d) khng phi cc phng n trn.


61. Hiu sut ca mch khuych i cng sut lp A l
(a) 25% ; (b) 50%; (c) 79%; (d) 98%.


62. Cc transistor mch khuych i lp B c phn cc
(a) chuyn vo vng ngng dn; (b) trong vng bo ha;
(c) ti im gia ca ng ti; (d) ngay ti vng ngng dn .


63. Mo xuyn-tm l vn ca
(a) mch khuych i lp A; (b) mch khuych i lp AB;
(c) mch khuych i lp B; (d) tt c cc mch khuych i trn .


64. Mch khuych i y-ko lp B bng BJT khng ghp bng bin p s s dng
(a) hai transistor npn; (b) hai transistor pnp;
(c) cc transistor i xng b; (d) khng phi cc phng n trn .

65. Mch gng dng trong mch khuych i y-ko s lm cho
CQ
I sao cho
(a) bng vi dng chy trong cc diode v cc in tr phn cc;
(b) gp hai mc dng chy trong cc diode v cc in tr phn cc;
(c) bng mt na mc dng chy trong cc diode v cc in tr phn cc;
(d) bng 0 .
-106-

66. Hiu sut ca mch khuych i y-ko lp B l
(a) 25% ; (b) 50%; (c) 79%; (d) 98%.


67. Tn hiu ra ca mch khuych i y-ko lp B dng ngun-kp c
CC
20 V V = . Nu in tr ti
l 50 O, th gi tr ca
C(sat)
I l
(a) 5 mA ; (b) 0,4 A; (c) 4 mA; (d) 40 mA.


68. Hiu sut ca mch khuych i lp AB l
(a) cao hn so vi b khuych i lp B; (b) tng t nh khuych i lp B;
(c) xp x nh khuych i lp A; (d) hi thp hn so vi khuych i lp B .

69. tiu tn cng sut ca mch khuych i lp C thng l
(a) rt thp; (b) rt cao;
(c) tng t nh khuych i lp B; (d) tng t nh khuych i lp A.

70. Hiu sut ca mch khuych i lp C l
(a) thp hn so vi b khuych i lp A; (b) thp hn mch khuych i lp B;
(c) thp hn mch khuych i lp AB; (d) ln hn so vi cc b kh. i lp A, B, or AB.

































-107-

BI TP

BI TP C BN

Mc 3-1 CU TO CA TRANSISTOR

1. Loi ht ti in a s trong vng base ca transistor npn l g?

2. Hy gii thch mc ch ca ch to vng base mng, v c pha tp long.



Mc 3-2 NGUYN L HOT NG CA TRANSISTOR

3. Ti sao dng base trong transistor thp hn nhiu so vi dng collector?


4. Trong mt mch transistor, dng base bng 2% ca dng emitter l 30mA.
Hy xc nh mc dng collector.


5. kiu hot ng bnh thng ca transistor pnp, base cn phi (+ hay -) so vi emitter v
(+ hay - ) i vi collector.


6. Tr s ca
C
I l bao nhiu c
E
5, 34 mA I = v
B
475 A I = ?


Mc 3-3 CC THNG S V H C TUYN CA TRANSISTOR

7. Tr s ca
DC
o l bao nhiu khi
C
8, 23 mA I = v
E
8, 69 mA I = ?


8. Mt transistor c
C
25 mA I = v
B
200 A I = . Xc nh tr s ca
DC
| .


9. Tr s ca
DC
| ca transistor l bao nhiu nu
C
20, 3 mA I = v
E
20, 5 mA I = ?


10. Tr s ca
DC
o l bao nhiu nu
C
5, 35 mA I = v
B
50 A I = ?

11. Mt transistor c
DC
0, 96 o = . Xc nh
C
I khi
E
9, 35 mA I = .


12. p t mc dng base bng 50A vo transistor mch hnh 4.45,
v st p trn
C
R l 5V. Xc nh
DC
| ca transistor.


13. Tnh tr s ca
DC
o cho transistor bi tp 12.


14. Gi thit cho transistor trong mch hnh 4.45, c
thay th bng BJT khc c . Hy tnh
B
I ;
C
I ;
E
I ; v
CE
V . Cho
CC
10 V V = , v
BB
3 V V =



-108-

15. Nu
CC
V mch hnh 4.45, tng ln mc 15 V, th cc
dng in v
CE
V thay i nh th no?






16. Xc nh cc dng in trong mch hnh 4.46. Tr s
ca
DC
| l bao nhiu?




17. Tnh tr s ca
CE
V ,
BE
V , v
CB
V c hai mch hnh 4.47.









18. Hy xc nh xem c transistor no trong 2 mch hnh
4.47, bo ha.


19. Tnh tr s ca
B
I ;
E
I ; v
C
I trong mch hnh 4.48.
DC
0, 98 o = .




20. Xc nh in p trn cc in cc ca mi
transistor i vi t cho mi mch hnh
4.49. Tnh tr s ca
CE
V ,
BE
V , v
CB
V .






21. Nu thay i
DC
| trong mch hnh 4.49(a) thay i t 100 n 150 do nhit tng, th thay
i dng collector l bao nhiu?



22. Mt transistor ang hot ng mc dng collecter bng 50mA. Tr s
CE
V c th cao bao nhiu
m khng lm cho transistor vt qu cng sut
D
1, 2 W P = ?




-109-

23. H s suy gim tiu tn cng sut ca mt transistor l 1mW/C.
D(max)
0, 5 W P = 25C. Vy
D(max)
P
)
ti 100C l bao nhiu?




Mc 3-4 TRANSISTOR LM MCH KHUYCH I

24. Mt b khuych i c h s khuych i in p l
50. in p ra l bao nhiu khi in p vo l 100
mV?
25. nhn c mc in p ra l 10 V vi in p vo
l 300 mV, th cn phi c h s khuych i in p
l bao nhiu?
26. Tn hiu 50 mV c t vo base ca mt transistor
c phn cc ng c
e
10 r' = O v
C
560 R = O.
Hy xc nh in p tn hiu ti collector.

27. Hy tnh tr s ca in tr collector trong mch khuych i bng BJT npn c
DC
250 | = ;
BB
2, 5 V V = ;
CC
9 V V = ;
CE
4 V V = ; v
B
100 k R = O.







28. H s khuych i dng dc ca mi mch hnh 4.47 l bao nhiu?


Mc 3-5 TRANSISTOR LM CHUYN MCH

29. Hy xc nh
C(sat)
I ca
transistor hnh 4.50. Gi
tr ca
B
I cn phi c l bao
nhiu to ra s bo ha?
Tr s thp nht ca
IN
V cn
thit l bao nhiu c s
bo ha? Cho rng
CE(sat)
0 V V = .

30. Transistor trong mch hnh
4.51, c
DC
150 | = . Xc
nh tr s ca
B
R cn thit
m bo s bo ha khi
IN
V l 5V.
IN
V cn phi bao
nhiu lm transistor
ngng dn? Gi s
CE(sat)
0 V V = .
-110-

Mc 3-6 PHOTOTRANSISTOR

31. Mt phototransistor trong mch c
DC
200 | = . Nu 100 A I

= , dng collector l bao nhiu?

32. Hy xc nh dng emitter chy trong mch phototransistor
hnh 4.60, nu mi lm/m
2
ca cng sng s to ra mc
dng base l 1 A chy trong phototransistor.






33. Mt b ghp-quang [optical coupler] c t s truyn t dng l 30%. Nu dng vo l 100 A, th
dng ra l bao nhiu?



34. Mt b ghp-quang [optical coupler] nh mch hnh
4.61, c yu cu cung cp n ti thp nht l 10
mA. Nu t s truyn t dng l 60%, th mc dng
cn phi c cung cp n u vo l bao nhiu?






Mc 3-7 NHN BIT CHN V CC DNG V CA TRANSISTOR

35. Hy cho bit cc in cc cc transistor trong hnh
4.52. Hnh v nhn t di ln.





36. c tnh c th c ni
bt nht ca mi loi
transistor trong hnh
4.53, l g?






-111-

Mc 3-8 IM LM VIC DC

37. Dng sng th hin hnh 5.36, l dng sng ra (in p
collector ca mt mch khuych i bng transistor c
phn cc. Transistor c phn cc qu gn vng ngt hay
qu gn vng bo ha?


38. im-Q ca transistor
c phn cc nh
hnh 5.2, l bao
nhiu, vi
B
150 A I = ;
DC
75 | = ;
CC
18 V V = ; v
C
1, 0 k R = O?








39. Tr s ca dng collector bo ha bi tp 38 l bao nhiu?


40. Tr s ca
CE
V ngng dn bi tp 38 l bao nhiu?


41. Hy xc nh cc im chn ca
ng ti dc trn trc dc v
trc ngang h c tuyn
collector ca mch hnh
5.37.



42. Nu mun phn cc cho transistor mch hnh 5.37, vi
B
20 A I = , th ngun cung cp
BB
V cn
phi thay i n mc in p l bao nhiu?
C
I v
CE
V ti im-Q l bao nhiu, cho
DC
50 | = ?





43. Hy thit k mch phn cc s dng ngun
BB CC
10 V V V = = , c im-Q l
C
5 mA I = v
CE
4 V V = . Cho
DC
100 | = . Thit k k c tnh
B
R ,
C
R , v thng s cng sut nh nht ca
transistor. (Thng s cng sut thc t cn phi ln hn). Hy v mch.




-112-

44. Hy xc nh transistor trong mch
hnh 5.38, l c phn cc lm
vic vng ngng dn, vng bo
ha, hay vng tuyn tnh. Nn nh
rng
C DC B
I I | = ch c ngha vng
tuyn tnh.

45. T h c tuyn collector v ng ti dc hnh 5.35, hy
xc nh cc thng s sau:
(a) Dng collector bo ha
(b)
CE
V ti vng ngng dn
(c) Cc gi tr im-Q gm
B
I ;
C
I ; v
CE
V



46. T h c tuyn collector hnh 5.35, hy xc nh
cc thng s sau:
(a) Dng collector ln nht ca BJT lm vic vng
tuyn tnh.
(b) Dng base ti mc dng collector ln nht.
(c)
CE
V tng ng vi mc dng collector ln nht.




Mc 3-9 PHN CC PHN P

47. Tr s
DC
| nh nht mch hnh 5.39, l bao nhiu to nn
IN(bas ) 2
10
e
R R > ?


48. in tr phn cc
2
R trong mch hnh 5.39, c thay th bng bin
tr 15kO. c s bo ha th phi thit lp tr s in tr nh nht
ca bin tr l bao nhiu?




49. Nu bin tr bi tp 48, t mc 2 kO, th tr s ca
C
I v
CE
V l bao nhiu?




50. Hy xc nh ton b cc in p u cc ca transistor so vi t
trong mch hnh 5.40. Khng b qua in tr u vo ti base hay
BE
V .






-113-

51. Trnh by cch mc mch cn c khi thay th
transistor mch hnh 5.40, bng transistor
pnp.



52. (a) Xc nh
B
V trong mch hnh 5.41.


(b)
B
V s b nh hng nh th no nu transistor c thay th
bng transistor khc c
DC
| bng 50?




53. (a) Xc nh gi tr ca im-Q trong mch hnh 5.41.




(b) Tnh mc cng sut nh nht ca transistor mch hnh 5.41.



54. Hy xc nh tr s ca
1
I ;
2
I ; v
B
I trong mch hnh 5.41.





Mc 3-10 CC PHNG PHP PHN CC KHC

55. Phn tch mch hnh 5.43, xc nh cc in p ng ti cc u
cc ca transistor so vi t. Cho
DC
100 | = .





56. Tr s ca
E
R trong mch hnh 5.43,
c th gim xung n gi tr no m
khng lm cho transistor chuyn vo
ch bo ha?

57. S dng
BE
V trong tnh ton mch
hnh 5.43,
E
I s thay i bao nhiu
khi nhit tng ln t 25C n
100C? Cho bit rng,
BE
0, 7 V V =
nhit 25C v s suy gim 2,5 mV
tng ng vi 1Celsius. B qua nh
hng ca
DC
| .
-114-

58. Khi no th nh hng do s thay i
DC
| c th c b qua trong
mch phn cc emitter?


59. Hy xc nh
C
I v
CE
V trong mch phn cc emitter bng transistor
pnp hnh 5.44. Cho
DC
100 | = .



60. Xc nh
B
V ,
C
V , v
C
I trong mch hnh 5.45.



61. Gi tr no ca
C
R c th dng lm gim 25% mc dng
C
I bi tp 60.


62. Mc cng sut thp nht ca transistor bi tp 61 l bao nhiu?


63. Mch transistor npn phn cc hi tip-collector c
CC
12 V V = ;
C
1, 2 k R = O ; v
B
47 k R = O . Tnh dng collector v in p
collector nu
DC
200 | = .






64. Xc nh
B
I ,
C
I v
CE
V ca mch transistor phn cc base vi cc
thng s sau:
DC
90 | = ;
CC
12 V V = ;
B
22 k R = O, v
C
100 R = O.









65. Nu
DC
| bi tp 64 tng gp i do nhit , th cc gi tr ca im-Q l nh th no?









-115-

66. Gi s c hai mch phn cc base c mc dng o th. Hai mch l nh nhau ngoi tr mt
mch c phn cc bng ngun
BB
V ring v mch cn li c phn cc bng cch mc in
tr base ni vi
CC
V . Cc ng h o dng [ammeter] c mc vo mch o dng collector
thay i trong mch. Thay i in p ngun cung cp
CC
V v thy rng dng collector trong
mt mch c thay i nhng trong mch cn li th khng thay i. Trong mch no c s thay
i dng collector? Gii thch.
















67. Trang s liu ca mt transistor cho bit
DC
| thp nht l 50 v
DC
| cao nht l 125. Khong cc
gi tr ca im-Q c th c l bao nhiu nu th thc hin nhiu gi tr cho mch hnh 5.42?
Khong cc gi tr ny c th chp nhn c khng nu im-Q vn phi vng tuyn tnh ca
transistor?












68. Mch phn cc base hnh 5.42, phi chu s thay i nhit t 0C n 70C.
DC
| s gim
xung 50% 0C v s tng ln 75% ti 70C t tr s nh mc l 110 25C. bin thin
C
I v
CE
V l bao nhiu trong khong nhit t 0C n 70C?











-116-

Mc 3-11 NGUYN L HOT NG CA MCH KHUYCH I

69. Tr s dng collector dc thp nht l bao nhiu
lm cho transistor c h c tuyn nh
hnh 6.4 c th c phn cc m vn duy tr
hot ng tuyn tnh vi dao ng dng
base nh-nh l 20A?






70. Tr s dng collector dc cao nht l bao nhiu
iu kin nh trong bi tp s 69?




Mc 3-12 CC MCH TNG NG AC CA TRANSISTOR

71. Nu dng emitter dc trong mt transistor l 3mA, th tr s ca
e
r'
l bao nhiu?
72. Nu
fe
h ca transistor c quy nh l 200, xc nh
ac
| .
73. Mt transistor c beta dc (h
FE
) bng 130. Nu dng
base dc l 10A, xc nh
e
r'
. Cho
DC
0, 99 o = .
74. Ti im phn cc dc ca mt mch transistor c
B
15 A I = v
C
2 mA I = . Ngoi ra cn c
bin thin
B
I l 3A xung quanh im-Q s to ra bin thin
C
I l 0,35mA xung quanh
im-Q. Hy xc nh
DC
| v
ac
| .




Mc 3-13 MCH KHUYCH I EMITTER-CHUNG

75. Hy v mch tng ng dc v mch tng ng ac ca b
khuych i khng ti hnh 6.51.






76. Hy xc nh cc gi tr sau ca mch khuych i hnh 6.51.
(a)
B
V
(b)
E
V
(c)
E
I
(d)
C
I
(e)
C
V

-117-

77. Hy tnh tiu tn cng sut tnh ca mch khuych i hnh 6.51.



78. Hy xc nh cc gi tr sau ca mch khuych i hnh 6.51.
(a)
IN(base)
R

(b)
IN(total)
R

(c)
v
A

79. Mc t r mch song song vi
E
R trong mch hnh 6.51, v tnh:
(a)
IN(base)
R

(b)
IN(total)
R

(c)
v
A

80. Mc in tr ti 10 kO ti u ra ca mch hnh 6.51, v tnh:
(a)
IN(base)
R

(b)
IN(total)
R

(c)
v
A

81. Hy xc nh cc gi tr dc sau cho mch khuych i hnh 6.52.
(a)
E
I

(b)
E
V

(c)
B
V

(d)
C
I

(e)
C
V

(f)
CE
V
82. Hy xc nh cc gi tr sau ca mch khuych i hnh 6.52.
(a)
in(base)
R

(b)
in
R

(c)
v
A

(d)
i
A

(e)
p
A
-118-

83. Cho ngun in p 12Vrms; 600O a vo mch khuych i nh hnh 6.52. Hy xc nh h
s khuych i ton b bng cch tnh c suy gim mch base, v tnh in p ra y (ac
v dc). Quan h v pha gia in p tn hiu trn collector vi in p tn hiu trn base l nh
th no?









84. Mch khuych i nh hnh 6.53, c
th iu chnh thay i h s
khuych i bng cch s dng bin
tr 100 O lm
E
R vi mch ni t-
ac. Tng in tr
E
R vn khng i
i vi dc, gi phn cc c nh.
Hy xc nh h s khuych i ln
nht v nh nht cho mch khuych
i khng ti trn.






85. Nu in tr ti bng 600 O c mc vo u ra ca mch khuych i nh hnh 6.53, th h s
khuych i ln nht v nh nht ca mch l bao nhiu?





86. Tnh h s khuych i in p ln nht ton b ca mch khuych i hnh 6.53, c ti l 1,0
kO nu mch c cung cp bi ngun 300 O.





87. Sa i li mch mch hnh 6.52, khng b nh hng bi nhit ln
e
r'
bng cch chn
E(ac)
R t nht phi ln hn
e
r'
10 ln. Vn gi cng mt
E
R tng. H s khuych i in p s
nh hng iu ny nh th no?







-119-

Mc 3-14 MCH KHUYCH I COLLECTOR-CHUNG

88. Hy xc nh h s khuych i in p chnh xc cho mch lp li-
emitter khng ti hnh 6.54.








89. in tr vo ton b ca mch hnh 6.54, l bao nhiu? in p ra
dc l bao nhiu?







90. in tr ti c ghp bng t n in cc emitter trong mch hnh 6.54. Xt theo tn hiu, ti
th hin mc song song vi
E
R nn s gim in tr emitter hiu dng. H s khuych i in p
do nh hng ny nh th no?




91. Theo bi tp 90, gi tr ca
L
R l bao nhiu s lm cho h s khuych i in p gim xung bng
0,9?




92. Cho mch nh hnh 6.55, xc nh cc thng s sau:
(a) Cc mc in p dc trn cc in cc ca Q
1
v Q
2






(b)
ac
| ton b


(c)
e
r'
ca mi transistor

(d) in tr vo ton b



93. Tnh h s khuych i dng in,
i
A ca mch hnh 6.55.



-120-

Mc 3-15 MCH KHUYCH I BASE-CHUNG

94. Nhc im chnh ca mch khuych i base-chung so vi
cc mch khuych i emitter-chung v lp li emitter l g?




95. Tnh
( ) in emitter
R ;
v
A ;
i
A ; v
p
A ca mch khuych i khng ti
hnh 6.56.




96. Tng ng cc c tnh chung sau c cu hnh ca b khuych i thch hp.
(a) H s khuych i dng bng 1, h s khuych i p cao, in tr vo rt thp


(b) H s khuych i dng cao, h s khuych i p cao, in tr vo thp


(c) H s khuych i dng cao, h s khuych i p bng 1, in tr vo cao


Mc 3-16 MCH KHUYCH I NHIU TNG

97. Mi tng trong s hai tng khuych i ghp ni tip
c 20
v
A = . H s khuych i chung l bao nhiu?

98. Mi tng trong s ba tng khuych i ghp ni tip c h s khuych i in p bng 10 dB. H
s khuych i chung tnh theo dB l bao nhiu? H s khuych i in p chung thc t l bao
nhiu?




99. Cho b khuych i hai tng ghp bng t nh
hnh 6.57, tnh cc gi tr sau:
(a) H s khuych i in p ca mi tng




(b) H s khuych i in p ton b




(c) Tnh h s khuych i in p cu (a)
v (b) theo dB.




-121-

100. Nu b khuych i nhiu tng nh hnh 6.57, c cung cp bi ngun tn hiu 75O; 50V v
tng th hai c ni vi ti c 18 k
L
R = , xc nh
(a) H s khuych i in p ca mi tng



(b) H s khuych i in p ton b




(c) Tnh h s khuych i in p cu (a) v (b) theo dB.



101. Hnh 6.58, l b khuych i 2
tng ghp trc tip (tc l
khng c cc t ghp gia cc
tng). in p phn cc dc
ca tng th nht s thit lp
in p phn cc dc ca tng
th 2. Xc nh tt c cc in
p dc ca c hai tng v h s
khuych i in p ac ton
mch.




102. Biu din cc h s khuych i in p sau theo dB:
(a) 12
(b) 50
(c) 100
(d) 2500
103. Biu din cc h s khuych i in p sau tnh theo dB thnh cc h s khuych i in p
chun:
(a) 3dB
(b) 6dB
(c) 10dB
(d) 20dB
(e) 40dB


Mc 3-17 MCH KHUYCH I VI SAI

104. Cc in p base dc trong mch hnh 6.59 bng 0. Bng kin
thc v phn tch transistor, hy xc nh in p ra vi sai
dc. Cho bit rng Q
1
c o = 0,980 v Q
2
c o = 0,975.






-122-

105. Hy cho bit cc tr s ca cc i lng s o
c trn mi ng h trong mch hnh 6.60.





106. Tng khuych i vi sai c hai in tr
collector l 5,1kO mi nhnh. Nu
C1
1, 35 mA I = v
C2
1, 29 mA I = , th in p
ra vi sai l bao nhiu?






107. Hy cho bit kiu cu hnh vo v ra ca mi mch khuych i vi sai c bn hnh 6.61.
















Mc 3-18 SAI HNG MCH TRANSISTOR

108. o th ngoi mch mt transistor npn cn tt, th ohmmeter tng t s ch th nh th no nu
u que o dng ca ng h chm vo cc emitter cn que o m chm vo cc base? Khi que
o dng chm vo base cn que o m chm vo collector?












-123-

109. Sai hng c th thch hp nht, nu c trong mi mch hnh 4.54? Cho
DC
75 | = .



110. Tr s ca
DC
| l bao nhiu mi mch hnh 4.55?




111. Xc nh cc s ch th trn ng h mc trong mch
hnh 5.46, nu
1
R h mch.





112. Gi s emitter ca transistor trong mch hnh 5.46,
b ngn mch vi t do chm mi hn. Ch th trn
cc ng h o l bao nhiu? Khi mch c sa
cha hot ng bnh thng th ch th trn cc ng
h o l bao nhiu?







-124-

113. Hy xc nh cc sai
hng c th xy ra
nht, nu c trong mi
mch hnh 5.47, da
vo cc s ch th trn
cc ng h.















114. Hy xc nh trng thi ca mch nu cc s ch th ca DMM cc php o t 2 n 4 trn mch
o th hnh 5.48, l ng. Nu mch khng bnh thng, c lp (cc) sai hng. Transistor l pnp
c thng s beta dc trong khong t 35 n 100.


















115. Hy xc nh s ch th ca ng h o trong mch hnh 5.48, cho mi sai hng sau:
(a) h mch in tr 680O
(b) h mch in tr 5,6kO
(c) h mch in tr 10kO
(d) h mch in tr 1,0kO
(e) ngn mch t emitter vi t
(f) h mch tip gip base-emitter





-125-

116. Gi s rng t ghp tng
3
C trong mch
hnh 6.33, b ngn mch. in p dc
s c ti collector ca Q
1
l bao
nhiu?








117. Gi s rng
5
R trong mch hnh 6.33,
b h mch. Q
2
ngng hay dn? in
p dc s o c ti collector ca Q
2

l bao nhiu?



118. Xt mch hnh 6.57, v hy xc nh nh hng thng thng ca mi sai hng sau:
(a) C
2
h mch

(b) C
3
h mch

(c) C
4
h mch

(d) C
2
ngn mch

(e) Tip gip base-collector Q
1
h mch

(f) Tip gip base-collector Q
2
h mch




119. Gi s rng bn cn phi x l sai hng trong mch khuych i hnh 6.57. Hy lp bng ghi cc
gi tr im o in p ti u vo, u ra, v ton b cc u cc ca transistor bao gm c gi tr
dc v hiu dng (rms) m bn tin chc s o c khi s dng ngun tn hiu o th l 300O,
in p ra l 25V rms.












-126-


BI TP P DNG H THNG HOT NG

120. Tnh tiu tn cng sut trong mi in tr hnh 4.51, theo c hai trng thi ca mch.





























121. Hy xc nh gi tr nh nht ca in tr ti Q
2
c th lm vic m khng vt qu mc dng
collector ln nht c quy nh phiu s liu.



122. Hy kho st s chy dy cho bng mch
hnh 4.52, mc bng mch vi h thng an
ninh bo chung. Cc u vo/ra c nh
s t 1 n 10 bt u t pha trn.











-127-

123. Hy xc nh
B
V ,
E
V ,
v
C
V trong mch
chuyn i nhit
thnh in p nh
hnh 5.30, nu
1
R b
hng h mch.








124. Cc sai hng no s lm
cho transistor trong b
chuyn i nhit
thnh in p chuyn
sang ngng dn?



125. Thermistor c c tuyn nh hnh 5.31, c dng trong mch hnh 5.30. Tnh in p ra theo
cc nhit 45C; 48C; v 53C. Gi thit mch phn p khng thay i.





126. Hy gii thch lm th no nhn bit h mch tip gip collector-base trong transistor hnh
5.30.




127. Hnh 6.46, l s khi ca h thng nhn tin/tng i cng cng. Bn c yu cu sa cha h
thng khi khng hot ng. Sau khi kim tra s b, c bit l khng c tn hiu ra t mch
khuych i cng sut hoc t mch tin khuych i. Cn c vo du hiu kim tra v cho thy
rng ch mt trong hai khi b hng, khi no c th hng? Bn cn phi kim tra tip theo l g?














-128-

128. Xc nh cc in p dc v ac ti u ra
(collector ca Q
2
) cho tng sai hng mch
khuych i hnh 6.47, sau. Cho bit tn hiu
vo l 2 mV v 200
ac
| = .
(a)
1
C h mch.

(b)
2
C h mch.

(c)
3
C h mch.

(d)
4
C h mch.

(e) Collector ca Q
3
t mch bn trong.

(f) Emitter ca Q
2
b ngn mch vi t.



129. Gi s mt in tr 220 kO c lp khng ng vo v tr
6
R ca mch khuych i hnh 6.47.
iu ny gy ra nh hng nh th no trn mch v in p ra l bao nhiu (dc v ac) nu in
p vo l 3mV rms?





130. Mch ni t
1
R n ngun in p hnh 6.47, b h mch.
(a) Q
1
s nh th no?

(b) in p ti collector ca Q
1
l bao nhiu?

(c) in p ti collector ca Q
2
l bao nhiu?












-129-

BI TP V THNG S CA BJT


131. Tham kho trang s liu ca transistor hnh 4.19.
(a) in p collector-emitter ln nht ca transistor 2N3904 l bao nhiu?
(b) Dng in collector dc m 2N3904 c th lm vic lin tc l bao nhiu?
(c) Mc cng sut 2N3904 c th tiu tn l bao nhiu nu nhit khng kh xung quanh l
25C?
(d) Mc cng sut m 2N3904 c th tiu tn l bao nhiu nu v ti nhit 50C?

(e)
DC
| (
FE
h ) ca 2N3904 nh nht l bao nhiu nu dng collector l 1mA?
-130-

132. Tham kho trang s liu ca transistor hnh 4.19. 2N3904 ang c s dng trong mi trng
c nhit xung quanh l 65C. Mc cng sut m transistor c th tiu tn ln nht l bao
nhiu?



133. Tham kho trang s liu ca transistor hnh 4.19. 2N3904 ang lm vic vi nhit ngoi v
l 45C. Mc cng sut m transistor c th tiu tn ln nht l bao nhiu?



134. Tham kho trang s liu ca
transistor hnh 4.19. Hy
xc nh c thng s no b
vt qu trong mi mch
hnh 4.56, cn c vo cc gi
tr quy nh nh nht.





135. Tham kho trang s liu ca transistor hnh 4.19. Hy xc nh trong mi mch hnh 4.57,
transistor c b bo ha hay khng? da trn gi tr ca
DC
| (
FE
h )quy nh ln nht.













136. Tham kho trang s liu ca transistor hnh 4.41. Hy xc nh mc dng base nh nht v ln
nht to ra mc dng collector bng 10mA chy trong transistor 2N3946. Gi thit l transistor
khng trng thi bo ha v
CE
1 V V = .






-131-



137. Vi mi mch hnh
4.58, v da vo thng
tin phiu s liu hnh
4.41, xc nh vn
nu c. S dng
DC
| (
FE
h ) ln nht.


-132-

138. Phn tch mch chuyn i nhit thnh in p hnh 5.47,
ti cc mc nhit cc tr tng ng vi gi tr h
FE
(tc |
DC
)
thp nht v cao nht cho phiu s liu. Tham kho phiu s
liu hnh 5.50.













































139. Kim chng cc thng s ln nht ca transistor trong mch chuyn i nhit thnh in p
hnh 5.47, c b vt qu khng. Tham kho phiu s liu hnh 5.50.



-133-


















































140. Tham kho phiu s liu hnh 5.51.
(a) Dng collector ln nht ca 2N2222A l bao nhiu?
(b) in p base-emitter ln nht ca 2N2118 l bao nhiu?

-134-

141. Xc nh tiu tn cng sut ln nht ca 2N2222 ti 100C.



142. Khi tng dng collector chy trong 2N2219 t 1mA ln 500mA, th
DC
| (
FE
h ) thay i nh nht l
bao nhiu?


143. Tham kho phiu s liu mt phn ca 2N3946/2N3947 hnh 6.63. Hy xc nh tr s nh nht
ca tng thng s r sau:
(a)
ac
|
(b)
e
r'
(c)
c
r'




























144. Lp li bi tp 143, i vi cc tr s ln nht.





145. Cn phi s dng transistor 2N3946 hay 2N3947 trong mch ng dng nu yu cu tiu chun l
h s khuych i dng ln nht?




-135-

BI TP NNG CAO

146. Lp cng thc ca
DC
o di dng
DC
| .


147. Mch phn cc dc cho 2N3904 c cc gi tr quy nh hot ng ch bo ha.
B
500 A I =
;
CC
10 V V = , v
C
180 k R = O;
DC
150 | = . Nu tng
CC
V ln n 15V, transistor c cn hot ng
ch bo ha khng? Nu nh vy, th in p collector-emitter v dng collector l bao
nhiu?







148. Hy thit k mch phn cc dc cho 2N3904 lm vic vi ngun cung cp in p trn collector l
9 V v in p phn cc base l 3 V cung cp mc dng 150 mA n in tr collector. Mch
yu cu khng chuyn vo vng bo ha. Chn
DC
| l tr s nh nht t phiu s liu.







149. Sa i thit k mch bi tp 148 s dng ngun dc n 9V, ng ra l hai ngun khc nhau.
Cc yu cu khc vn khng thay i.










150. Hy thit k mch phn cc dc cho b khuych i c h s khuych i in p ti thiu l 50 v
in p tn hiu ra dao ng ti mc dc bng 5 V. in p tn hiu vo ln nht ti base l 10 mV
rms.
CC
12 V V = , v
BB
4 V V = . Cho 8
e
r' = .








-136-

151. Hy thit k mch phn cc base lm vic t
ngun in p 15 V dc v dng chy ln nht t
ngun dc (
CC(max)
I )l 10mA. Cc gi tr ca im-Q
yu cu l
C
5 mA I = v
CE
5 V V = . S dng
transistor 2N3904. Cho tr s trung bnh ca
DC
| .





152. Hy thit k mch phn cc emitter lm vic t hai
ngun in p dc l + 12V v 12V. Dng
CC
I ln
nht phi l 20 mA, cn im-Q ti 10 mA v 4V.
Transistor l 2N3904.







153. Hy thit k mch phn cc phn p theo cc thng
s sau:
CC
9 V V = ;
CC(max)
5 mA I = ;
C
1, 5 mA I = ; v
CE
3 V V = . Transistor l 2N3904.







154. Hy thit k mch phn cc hi tip-collecter s dng
2N2222 vi
CC
5 V V = ;
C
10 mA I = , v
CE
1, 5 V V = .





155. C th thay th 2N3904
mch hnh 5.47,
bng 2N2222A v duy
tr cng khong in
p ra tng ng vi
khong nhit t
45C n 55C c
khng?






-137-

156. Tham kho c tuyn trong phiu s liu hnh 5.52, v trang s liu hnh 5.51. Xc nh h s
khuych i dng dc nh nht ca 2N2222 ti cc nhit - 55C; 25C; & 175C vi
CE
1 V V =














157. Trong mt mch khuych i chng hn nh
mch hnh 6.47, hy gii thch nh hng
thng thng s c n hot ng ca mch
khi t ghp tng b r.







158. V mch tng ng dc v ac ca mch
khuych i hnh 6.47.







159. Hy thit k li mch khuych i hai tng
nh hnh 6.47, iu khin ti l 10 kO
v gi nguyn cng mt h s khuych i
in p.












-138-

160. Hy thit k mch khuych i emitter-chung tng-n c h s khuych i in p bng 40dB,
hot ng t in p ngun cung cp l + 12V. S dng transistor 2N2222, phn cc phn p,
v in tr n nh nhit l 330O. Tn hiu vo ln nht l 25 mV rms.










161. Hy thit k mch lp li-emitter c in tr
vo nh nht l 50kO s dng transistor npn
2N3904 vi 100
ac
| = .






162. Lp li bi tp 161 nhng s dng 2N3906 c 100
ac
| = .







163. Hy thit k mch khuych i base-chung tng-n c h s khuych i in p bng 75. S
dng 2N3904 vi phn cc emitter. Hai in p ngun cung cp l 6V.






164. Xem xt mch khuych i hnh 6.47, v xc nh gi tr nh nht ca cc t ghp tng cn thit
b khuych i to ra cng mc in p ra 100 Hz v s t n 5000 Hz.






165. Hy chng t rng i vi mch khuych i eimtter-chung khng ti bt k ch vi in tr
collector R
C
cn R
E
c r mch, th h s khuych i in p l A
v
~ 40V
RC
.





-139-

BI TP B SUNG

166. Tnh bin dao ng ca in p ra nh-nh cho mch hnh
2.17, khi c
1
2 k R = O ;
2
15 k R = O ;
E
200 R = O ;
C
2 k R = O ;
L
2 k R = O, 200 | = ,
BE
0, 7 V V = , v
CC
15 V V = .
[p s: 6, 3 Vpp]
















167. Da theo bi tp 166, hy thit k mch khuych i cho dao ng i xng ln nht. Tnh
cc tr s ca
1
R v
2
R . [p s:
1
4, 5 k R = O,
1
36 k R = O]













168. Bin dao ng ca in p ra i xng ln nht l bao nhiu i vi cu hnh cho bi tp
166. [p s: 8,8 Vpp ]









169. Mc cng sut ra ca mch khuych i bi tp 167, l bao nhiu ? Cng sut ca ngun cung
cp cho mch khuych i l bao nhiu ? [p s: 4,9mW; 71,7mW]



-140-

170. Thit k mch khuych i emitter chung n nh phn cc s dng
mch nh hnh 2.22, nhn c in p ra tnh bng 0. Cho |
= 150, V
BE
= 0,7V; R
E
= 100O; v R
C
= 1kO.
[p s: R
1
= 1,71kO; R
2
= 12kO]














171. Xc nh dao ng ca in p ra i xng ln nht i
vi mch khuych i hnh 2.24a, nu trong mch c V
CC
= 15V; R
1
= 8kO; R
2
= 2kO; R
E
= 1kO; R
L
= 1kO; V
BE
=
0,7V; v | = 80. [p s: 7,8Vpp]












172. Da theo bi tp 171, hy thit k li mch khuych i c dao ng ca in p ra i
xng ln nht. Cc tr s mi ca R
1
, R
2
, v V
o
l bao nhiu?
[p s: 36,4kO; 10,3kO; 10Vpp]

















-141-

173. Hy xc nh tr s ca R
1
v R
2
cn thit t im-Q ca mch hnh P2.1a, trung tm ca
ng ti dc. Cho V
CC
= - 25V; R
C
= 2kO; R
E
= 1kO, v | c cc gi tr sau:
(a) | = 150; (b) | = 100; (c) | = 50.
[p s:
1 2 1 2
(a) 19 k; 70, 9 k;(b) 12, 7 k; 47, 3 k; R R R R = = = =

1 2
(c) 6, 34 k; 23, 6 k R R = = ]

































174. Xc nh bin dao ng nh-nh ln nht ca i
C
trong mch
ca hnh P2.1b. Cho bit rng, V
CC
= 24V; R
C
= 2kO; R
E
= 400O; v
| = 100. V ng ti dc khi:
(a) R
1
= 1kO; R
2
= 7kO
(b) R
1
= 1kO; R
2
= 35kO
(c) R
1
= 1kO; R
2
= 3kO
-142-

175. Hy xc nh cc thng s sau cho mch khuych i hnh P2.2:
(a) Cc tr s ca R
1
v R
2
nhn c I
CQ
= 10mA.
(b) dao ng ca in p ra i xng theo phn (a).
(c) V cc ng ti dc v ac.
(d) V cc dng sng ca i
C
v v
CE
.



















176. Cho mch khuych i nh hnh P2.2,
(a) Tnh cc tr s ca R
1
v R
2
nhn c dao ng i
xng ln nht.
(b) Xc nh tr s ca dao ng i xng ln nht nhn c
t phn (a).
(c) V cc ng ti dc v ac.
(d) V cc dng sng ca i
C
v v
CE
.
[p s:
1 2
(a) 2, 9 k; 6, 45 k;(b) 15 V R R = = ]






















-143-

177. Xc nh dao ng ca i
C
i xng nh-nh tn hiu ra cho mch
trong hnh P2.3, khi c R
1
= 5kO; R
2
= 50kO; V
CC
= 12V; V
BE
= 0,7V;
R
E
= 300O; | = 200; R
C
= R
L
= 5kO.



















178. Cho mch nh bi tp 177, tnh cc tr s ca R
1
v R
2
c dao ng ca i
C
nh-nh
i xng c th c ln nht. V cc ng ti.

















179. Cho mch khuych i cho bi tp 177, tnh cc tr s sau:
(a) Cng sut c cung cp bi ngun pin
(b) Cng sut tiu tn trn R
1
, R
2
, R
E
, v R
C
.
(c) Cng sut tiu tn tip gip collector.
[p s:
1 2
(a) 17,1 mW;(b) 0, 238 mW; 2, 38 mW;
VCC R R
P P P = = =

trans
0, 439 mW; 7, 32 mW;(c) 6, 75 mW
RE RC
P P P = = = ]
-144-

180. Cho mch khuych i cho bi tp 178, tnh cc tr s sau:
(a) Cng sut c cung cp bi ngun pin
(b) Cng sut tiu tn trn R
1
, R
2
, R
E
, v R
C
.
(c) Cng sut tiu tn tip gip collector.
So snh cc p s cc kt qu tnh c vi kt qu ca bi tp 179.





























181. Cho mch khuych i nh hnh P2.3, trong c R
1
= 3kO; R
2
= 20kO; R
C
= R
L
= 1kO; R
E
= 200O; | = 100; v V
CC
= 20V, xc
nh v tr im-Q. Transistor c thay th bng transistor c |
khc. Hy xc nh tr s yu cu nh nht ca | c I
CQ
khng
thay i qu 10%.
-145-

182. Cho mch khuych i nh hnh P2.4.
(a) Hy xc nh cc tr s ca R
1
v R
2
c I
CQ
= 8mA.
(b) Xc nh dao ng ca in p ra i xng theo cc tr s
cu (a).
(c) V cc ng ti dc v ac.
(d) Xc nh mc cng sut tiu tn bi transistor v cng sut tiu
tn bi R
L
.
[p s:
1 2
(a) 2, 28 k ; 16, 3 k ;(b) 4,8 V; R R = O = O

trans
(d) 19, 2 mW; 1, 44 mW
L
P P = = ]
























183. Cho mch khuych i nh hnh P2.4.
(a) Tnh cc tr s ca R
1
v R
2
c I
CQ
= 4mA.
(b) Xc nh dao ng ca in p ra i xng theo cc tr s
cu (a).
(c) V cc ng ti dc v ac.
(d) Xc nh mc cng sut tiu tn bi transistor v cng sut tiu
tn bi R
L
.
-146-

184. Cho mch khuych i nh hnh P2.4.
(a) Tnh cc tr s ca R
1
v R
2
cn thit nhn c dao
ng i xng ln nht.
(b) Xc nh dao ng ca in p ra i xng theo cc gi tr
cu (a).
(c) V cc ng ti dc v ac.
(d) Xc nh mc cng sut tiu tn bi transistor v cng sut tiu
tn bi R
L
.



























185. Hy xc nh tr s ca R
C
c dao ng i xng ln
nht cho mch hnh P2.5. Cho bit transistor s dng l
loi pnp. V ng ti dc v ac. Gi tr nh-nh ca in
p ra i xng ln nht l bao nhiu?
[p s: 1863 ; 5,97 V(p- p)
C o
R v = O = ]

-147-

186. Tnh chn I
CQ
v V
CEQ
c dao ng in p ra i xng ln
nht cho mch hnh P2.6.
(a) Xc nh cc tr s ca R
1
v R
2
c im lm vic trn.
(b) Tnh bin dao ng ca in p ra i xng ln nht.
(c) Xc nh mc cng sut tiu tn bi transistor v cng sut tiu
tn bi in tr ti.





























187. Cho mch khuych i nh hnh P2.7.
(a) Tnh I
CQ
v V
CEQ
.
(b) Xc nh xem mch khuych i c n nh hay khng khi c |
thay i ln. C th gi thit rng | thay i trong khong
150 < | < 250.
(c) V cc ng ti.
(d) Xc nh dao ng ca in p ra i xng.
-148-

188. t trc tip ngun in p ac vo base ca transistor npn nh hnh P2.8.
in tr ni ca ngun in p ac l R
i
. Hy xc nh I
CQ
, V
CEQ
v V
o
khi
tn hiu vo bng 0. (cho bit | = 100 v V
BE
= 0,7V).
[p s: 2,13 mA; 3, 61 V; = 2,87 V
CQ CEQ o
I V V = = ]
















189. Theo bi tp 188, tr s in tr cn phi c b sung vo in tr ni ca ngun tn hiu
to ra tn hiu ra ca mch ln mc 3V l bao nhiu khi v
i
= 0?







190. Phn tch mch hnh P2.9, v xc nh cc thng s sau (s dng
V
BE
= 0,7V v | = 100):
(a) I
CQ
v V
CEQ
.
(b) dao ng ca in p ra i xng.
(c) Cng sut cung cp t ngun pin
(d) Cng sut ac pht ra.
(e) Cc ng ti ca mch khuych i.




-149-

191. Thit k mch khuych i emitter-chung nh mch hnh P2.10,
nhn c dao ng ca in p ra i xng ln nht. Thit
k c n nh phn cc dc (s dng V
BE
= - 0,6V v | = 200):
(a) I
CQ
v V
CEQ
.
(b) R
1
v R
2
.
(c) dao ng ca in p ra i xng ln nht.
(d) Cng sut nh mc cn thit ca transistor.
(e) Cng sut ac pht ra ca mch khuych i.
[p s: (a) - 4, 04 mA; - 3,10 V;
CQ CEQ
I V = =

1 2
(b) 4, 57 k ; 32, 2 k ; R R = O = O

trans
(c) 5, 39 V; (d) 12, 5 mW;(e) 3, 62 mW
o
P P = = ]













192. Thit k mch khuych i emitter-chung n nh phn cc dc nh
mch hnh P2.11, nhn c dao ng ca in p ra l 1V
nh. (s dng V
BE
= 0,7V v | = 200). Mch khuych i s s
dng cng sut nh nht t ngun pin. Hy xc nh:
(a) I
CQ
v V
CEQ
.
(b) R
1
v R
2
.




























-150-

193. Cho mch nh hnh P2.12:
(a) Tnh cc tr s ca R
1
v R
2
nu I
CQ
= 6mA.
(b) V cc ng ti dc v ac.
(c) Xc nh dao ng ca in p ra i xng.
(d) Tnh mc cng sut tiu tn bi transistor v mc cng sut c phn
b n ti.



















195. Cho mch nh hnh P2.12:
(a) Tnh cc tr s ca R
1
v R
2
nu I
CQ
= 10mA.
(b) V cc ng ti dc v ac.
(c) Xc nh dao ng ca in p ra i xng.
(d) Tnh mc cng sut tiu tn bi transistor v mc cng sut c phn
b n ti.
[p s:
1 2
(a) 369 k ; 21,1 k ;(c) 8 V; R R = O = O

trans
(d) 40 mW; 4 mW
L
P P = = ]

-151-

196. Cho mch nh hnh P2.12:
(a) Tnh cc tr s ca R
1
v R
2
cn thit nhn c tn hiu i xng
c th ln nht.
(b) V cc ng ti dc v ac.
(c) Xc nh dao ng ca in p ra i xng ln nht.
(d) Tnh mc cng sut tiu tn bi transistor v mc cng sut c phn
b n ti.



















197. Cho mch khuych i lp-emitter nh hnh P2.13:
(a) Xc nh tr s ca V
CEQ
v I
CQ
.
(b) Tnh dao ng ca in p ra i xng.
(c) Tnh mc cng sut c phn b n ti v cng sut nh
mc cn thit cho transistor.



























-152-

198. Cho mch khuych i lpli-emitter nh hnh P2.14:
(a) Xc nh tr s ca V
CEQ
v I
CQ
.
(b) V cc ng ti dc v ac.
(c) Xc nh tr s bin dao ng ca in p ra i xng.
(d) in tr 1kO c r mch bng t. Gii thch cc thay i xy ra
trong hot ng ca mch.
[p s: (a) - 2,12 mA; - 18, 6 V;(c) - 4.14 V;
CQ CEQ
I V = =
(d) decreases to - 20,8 V and stays the same.
CC o
V' V ]

















199. Hy xc nh bin dao ng ca in p ra i xng ln nht cho
mch nh hnh P2.14, bng cch chn cc tr s khc cho R
1
(th
hin trong mch l 3kO) v R
2
(th hin trong mch l 12kO). Vy tr
s ca in tr R
1
v R
2
l bao nhiu? V cc ng ti tng ng.

























-153-

200. in tr collector R
C
(th hin trong mch l 1kO), s c r
mch bng t nh hnh P2.14. Hy xc nh dao ng ca
in p ra i xng ln nht bng cch chn tr s mi cho R
1
(th hin trong mch l 3kO) v R
2
(th hin trong mch l
12kO). Tr s ca cc in tr l bao nhiu ? Tnh mc cng
sut c phn b n ti v cng sut nh mc cn thit ca
transistor.





















201. Bng cch chn tr s mi cho R
1
v R
2
, hy xc nh dao
ng ca in p ra i xng ln nht cho mch nh hnh
P2.12, nu in tr ti l 500O. Tnh mc cng sut c phn b
n ti v cng sut nh mc cn thit ca transistor.
[p s:
trans
40 mW; 16 mW
L
P P = = ]





















-154-

202. Hy thit k mch khuych i lp-emitter s dng transistor npn c dao ng ca tn hiu
ra i xng ln nht vi cc thng s sau: R
B
= 250O; V
CC
= 12V; R
E
= R
L
= 8O; V
BE
= 0,7V
v | = 200. Ngoi ra, hy tnh P
o
(ac), mc cng sut c cung cp t ngun pin, v mc cng
sut cn thit c tiu tn bi transistor.



















203. Phn tch mch nh hnh P2.15, v xc nh cc thng s sau khi
| = 200 v V
BE
= 0,7V:
(a) I
CQ
v V
CEQ
.
(b) dao ng ca in p ra i xng.
(c) Cng sut cung cp t ngun pin.
(d) Cng sut ac pht ra.
(e) Mc cng sut nh mc ca transistor cn phi c.
























-155-

204. Mch khuych i CE nh hnh 3.7, c V
CC
= - 15V; R
L
; R
C
= 5kO; R
E
= 500O; v | =
200. Hy xc nh R
1
;

R
2
; A
v
; A
I; v in p ra i xng khng mo ln nht.


[p s:
1 2 V I
11,1 k ; 103 k ; = -9, 63; = -17, 6; ( - ) =12, 3 V
o
R R A A v p p = O = O ]























205. Cn c vo cc s liu cho bi tp 204, nhng R
E
c r mch bng mt t in. Tr s
mi ca R
1
, R
2
, A
v
, A
i
, v R
o
l bao nhiu ?
[p s:
1 2 V I in O
11,1 k ; 101 k ; = - 275; = -147; 2, 67 k ; 5 k R R A A R R = O = O = O = O]

-156-

206. Mch khuych i bng transistor pnp nh hnh 3.7, yu cu h
s khuych i in p A
v
= v
o
/v
i
= - 5 v in tr vo R
in
=
1k; R
L
= 5k; V
CC
= - 12V; V
BE
= - 0,7V; v = 200. Hy
xc nh h s khuych i dng, bin dao ng ca in p ra
ln nht, v tr s ca cc in tr cn li. Tr s mi ca R
1
, R
2
,
A
v
, A
i
, v R
o
l bao nhiu?
[p s:
I omax 1 2
= -1; = 6, 35 V; 1,1 k ; 8, 6 k A v R R = O = O]




















207. Thit k mch khuych i CE (hnh 3.7), c h s khuych i in p A
v
= - 60; R
L
= 5k, v
in tr vo R
in
= 5k. Hy thit k mch cho bin dao ng ca in p ra ln nht.
[p s:
1 2 I O
25, 2 ; 13, 4 k ; 179 k ; = - 60; ( - ) = 7,12 V
E
R R R A v p p = O = O = O ]
(Lu l mch khuych i khng n nh phn cc)]






















-157-

208. Thit k mch khuych i CE (hnh 3.7) cho bin
dao ng ca in p ra ln nht, vi R
L
= 6k; A
v
= -
60; v A
i
= - 20.
[p s:
1 2
30 ; 2, 67 k ; 40 k ;
E
R R R = O = O = O

in O
= 2 k ; ( - ) = 7,12 V R v p p O ]

















209. Thit k mch khuych i EF (hnh 3.11) vi 15
i
A = ; 18 V
CC
V = ; 100 | = ; 0, 7 V
BE
V = ; v
200
L
R = . Tnh bin dao ng ca in p ra khng mo nh-nh.
[p s:
1 2 O
28, 3 k ; 5,1 k ; 200 ; ( - ) =10,8 V
E
R R R v p p = O = O = O ]



























-158-

210. Thit k mch khuych i EF c
in
2 k R = ; 100
C
R = ; 18 V
CC
V = ; 100 | = ; 0, 7 V
BE
V = ;
v 200
L
R = .
[p s:
1 2 o
200 ; 4,89 k ; 5,1 k ; 10; ( - ) = 6, 48 V
E i
R R R A = v p p = O = O = O ]













211. Hy xc nh h s khuych i ca
mch khuych i CB (hnh 3.13a),
vi R
L
= 3k; R
E
= 500; V
CC
=
15V; V
BE
= 0,7V; R
B
= 6k; v =
200. Mch phi c thit k cho
bin dao ng ca in p ra ln
nht.
[p s: 37, 9
v
A = ]















212. Lp li bi tp 211, gi s c b sung thm t in dung ln mc t base vi t.
[p s: 157
v
A = ]

-159-

213. Thit k mch khuych i CB
(hnh 3.13a) c h s khuych
i in p l 40. Xc nh tr s
ca cc cu kin khi mch c V
CC
=
20V; R
L
= 4k; R
E
= 500; V
BE
=
0,7V; v = 100.
[p s:
1 2
4, 6 k ; 36, 4 k ; R R = O = O

in
4 k ; 45
C
R R = O = O ]




















214. Mi u ra ca mch hnh 3.22, c mc
vi 2kO. dao ng ca in p ra
mch tch pha l bao nhiu khi c V
CC
=
20V? Xc nh R
C
; R
E
; R
1
; R
2
, c
dao ng ca in p ra ln nht vi | =
200 v V
BE
= 0,7V.
[p s:
1
2 k ; 66, 9 k ;
C E
R R R = = O = O
2 o
99, 6 k ; ( - ) = 6 V(each output) R v p p = O ]

-160-

215. Cho mch khuych i emitter-chung nh hnh P3.1, V
BE
= 0,6V; V
CC
=
12V; | = 300; P
L
(trung bnh ln nht) = 100mW; v A
v
= - 10. Hy xc
nh R
1
, R
2
, R
in
v A
I
. Mc cng sut tiu tn trong transistor l bao
nhiu?.














216. Hy xc nh r
e
, A
I
, R
in
, v
o
v
i
v R
o
cho mch khuych i
CE
nh hnh P3.6, nu | = 100 v r
o
= .
[p s:
in
- 41; 463 ; - 33, 4
i v
A R A = = = ]
-161-

217. Hy so snh cc in tr vo v
cc h s khuych i in p
ca cc mch k huych i tng
ng ac nh hnh P3.7.





















218. Hy thit k mch khuych i CE nh hnh P3.8, s dng transistor
pnp khi c R
L
= 3kO; A
v
= - 10; V
BE
= - 0,7V; | = 200; A
I
= - 10, v
V
CC
= - 12V. Xc nh tt c tr s ca cc cu kin, R
in
, v dao
ng ca in p ln nht trn R
L
.
-162-

219. Thit k mch khuych i CE nh hnh P3.8, s dng transistor pnp khi c R
L
= 4kO; A
v
= -
10; A
I
= - 10; V
BE
= 0,7V; | = 200; v V
CC
= 15V. Xc nh tt c tr s ca cc cu kin, v
dao ng ca in p ra nh-nh ln nht.
[p s:
1 2
- 3,19 mA; 40,1 k ; 43, 2 k ; 563 k ; - 75, 2
CQ B i
I R R R A = = = O = O = O ]























220. Thit k mch khuych i CE nh hnh P3.8, s dng transistor npn
khi c R
L
= 9kO; A
v
= - 10; A
I
= - 10; V
BE
= 0,7V; | = 200, v V
CC
=
15V. Xc nh tt c tr s ca cc cu kin, R
in
, v dao ng ca
in p ra nh-nh ln nht.
-163-

221. Thit k mch khuych i CE nhn c h s khuych i in p
l - 25 khi c R
in
= 5kO; R
L
= 5kO; V
CC
= 12V; | = 200; v V
BE
=
0,7V. Xc nh tr s ca tt c cc cu kin, h s khuych i dng
in, v dao ng ca in p ra ln nht. S dng mch hnh
P3.8, nhng vi transistor npn.





















222. Phn tch mch hnh P3.9 v xc nh cc yu cu sau khi c | =
300; v V
BE
= 0,6V.
(a) I
CQ
v V
CEQ
.
(b) dao ng in p ra khng dng tn hiu.
(c) Cng sut c cung cp t ngun cung cp.
(d) H s khuych i in p.
(e) Cc ng ti.
[p s: (c) 82, 3 mW;(d) - 9, 69]

-164-

223. Thit k mch khuych i CE nhn c h s khuych i in p l - 10 khi c R
in
= 2kO;
R
L
= 4kO; V
CC
= 15V; V
BE
= 0,6V; v | = 300. Mch khuych i cn phi cho dao ng ca
in p ra khng b mo dng 2V, nn vic thit k cn phi thc hin tiu hao mc dng nh
nht t ngun cung cp dc. Xc nh tr s ca tt c cc cu kin v h s khuych i dng in.





















224. Thit k mch khuych i c h s khuych i ton b
l - 15 khi in p vo c tr khng ca ngun (R
i
) l 2kO
v b khuych i t c R
in
= 4kO; V
BE
= 0,7V; v | =
200. (hnh P3.10). mch khuych i cn phi cho dao
ng ca in p ra ln nht. Xc nh tr s ca tt c cc
cu kin, h s khuych i dng in A
I
v dao ng
ca in p ra ln nht.
-165-

226. Thit k mch khuych i nh mch hnh P3.11, c h s
khuych i in p l - 200 vi in tr vo l 1kO. Xc nh tr
s ca tt c cc cu kin, v dao ng ca in p ra ln nht
khi c | = 400 v V
BE
= 0,7V.
[p s:
1
5, 2 mA; 2 k ; 2, 23 k ;
CQ B
I R R = = O = O

2
19, 3 k ; 1, 53 V( - ) undistorted R p p = O ]





















227. Thit k mch khuych i EF nh mch hnh P3.12, iu khin ti
200O s dng transistor silicon pnp. V
CC
= - 24V; | = 200; A
I
= 10; v
V
BE
= - 0,7V. Hy xc nh tr s ca cc cu kin v tnh R
in
, I
CQ
, v
dao ng in p ra i xng khng mo dng theo mi tr s ca R
E
cho
di y:
(a) R
E
= R
L
; (b) R
E
= 0,2R
L
; (c) R
E
= 5R
L
. So snh cc kt qu.

-166-

228. Thit k mch khuych i EF
nh mch hnh 3.11a, s dng
transistor npn vi R
L
= 500O; V
BE
= 0,7V; A
i
= 25; | = 200; v V
CC

= 15V. Hy xc nh tr s ca
cc cu kin, R
in
, A
V
, v dao
ng in p ra ln nht.

















229. Thit k mch khuych i EF cung cp tn hiu cho ti 8O, khi c 60 | = ; 24 V
CC
V = ;
0, 7 V
BE
V = ; 1
v
A = ; v 10
i
A = . S dng mch nh hinh 3.11a. Hy xc nh tr s ca cc
cu kin, dao ng in p ra, v R
in
.

[p s:
1 2 in
2 A; 120 ; 873 ; 139 ; 14, 4 V( - ); 80
CQ B
I R R R p p R = = O = O = O = O]


-167-

230. Thit k mch khuych i EF nh mch hnh 3.11a, s dng transistor npn vi R
L
= 1500O; V
BE
= 0,7V; A
I
= 10; | = 200; v V
CC
= 16V. Hy xc nh tr s ca cc cu kin, R
in
, A
v
, v
dao ng in p ra ln nht.
























231. Phn tch mch nh hnh P3.13, v xc nh cc yu cu sau khi c
| = 300 v V
BE
= 0,6V:
(a) I
CQ
v V
CEQ
.
(b) dao ng ca in p ra khng mo.
(c) Cng sut yu cu t ngun cung cp.
(d) Cng sut ra ln nht (ac khng mo dng).
(e) Cc ng ti.
-168-

232. Thit k mch khuych i EF nh mch hnh 3.11a, cung cp tn hiu cho ti 10O vi V
CC
= 24V; V
BE
= 0,6V; A
v
= 1; R
in
= 100O; v | = 200. Hy xc nh tr s ca tt c cu kin, R
in
,
v dao ng in p ra ln nht.
[p s:
1 2
1, 6 A; 111 ; 410 ; 152
CQ B
I R R R = = O = O = O]
























233. Phn tch mch nh hnh P3.14, khi c | = 100 v V
BE
= 0,7V v
xc nh cc thng s sau:
(a) I
CQ
v V
CEQ
.
(b) dao ng ca in p ra khng mo.
(c) Cng sut c cung cp t ngun cung cp.
(d) Cng sut ra ln nht (ac khng mo dng).
(e) H s khuych i dng.
-169-

234. Thit k mch khuych i CB (hnh
3.13), c h s khuych i in p
bng 10 v ti 4kO. S dng | = 100; VBE
= 0,7V; VCC = 18V v R
E
= 500O. Hy
xc nh tr s ca I
CQ
, R
1
, R
2
, R
B
v
dao ng ca in p ra. H s khuych
i in p l bao nhiu khi R
1
c r
mch bng mt t in c in dng ln?


















235. Thit k mch khuych i CB bng cch s dng cc tr s cho bi tp 234, ngoi tr
h s khuych i in p l 100. Hy xc nh tr s ca R
1
, R
2
, I
CQ
, R
B
v dao ng ca
in p ra ln nht.
[p s:
1 2
2, 57 mA; 990 ; 1,11 k ; 8,87 k ; 9, 25 V( - )
CQ B
I R R R p p = = O = O = O ]


-170-

236. Thit k mch khuych i CB c dao ng in p ln nht v tr khng vo thp
nht l 100O; R
L
= 8kO; V
CC
= 12V; v R
E
= 500O. S dng transistor npn c | = 200, v V
BE
= 0,7V. Hy xc nh tr h s khuych i in p v tr s ca tt c in tr.
























237. Phn tch mch khuych i CB c
R
in
, A
v
, v V
o
(p-p) theo cc tr s nh
sau: V
CC
= 16V; R
1
= 2kO; R
2
= 25kO;
R
E
= 200O; R
C
= R
L
= 4kO; | = 200; v
V
BE
= 0,7V. Base c ni t ac nh
hnh 3.13.
-171-

238. Hy xc nh cc gi tr ca V
1
, V
2
, V
3
, V
4
, I
C1
, v I
C2
ca mch hnh
P3.15. | = 300 cho c hai transistor.
[p s:
1 2 3 4
2 V; 7, 4 V; 8,1 V; 5, 7 V V V V V = = = = ]



















239. Ghp trc tip mt mch khuych i CE vi mch EF (xem hnh
3.15b) cho dao ng ca in p ra l 4V vi cc tr s nh
sau: V
CC
= 12V; A
v
= 10; Q
1
c | = 200 v V
BE
= 0,7V; Q
2
c | =
100 v V
BE
= 0,7V; v R
E1
= 100O. Chn R
C
= 4kO, v xc nh
R
1
, R
2
, v R
E
.
-172-

240. Cho mch nh hnh P3.16, xc nh cc yu cu sau khi c |
= 400 v V
BE
= 0,6V:
(a) im-Q cho c hai mch khuych i.
(b) dao ng ca in p ra khng mo ln nht.
(c) H s khuych i in p v
o
v
i
.















241. Thit k mch khuych i CE bng transistor npn c in p ra ln nht vi cc thng s sau:
A
v
= - 20; R
in
= 4kO; R
L
= 5kO; V
CC
= 12V; | = 300; V
BE
= 0,7V. Xc nh tr s ca tt c
cc cu kin, dao ng ca in p ra nh-nh khng mo dng, v h s khuych i dng
in.
















242. Tnh R theo cc mc in p dc c V
o
= 0 cho mch hnh P3.23. Tnh
I
CQ1
, I
CQ2
, R
in
, R
o
, v A
v
. Bit rng, V
BE
= 0,7V v | = 100 cho c hai
transistor.










-173-

243. Thit k mt mch khuych i CE nh hnh P5.1, c
h s khuych i in p bng 8, khng vt qu gii
hn cng sut ca transistor, P
max
= 50 mW. Nu nhit
thay i t 25C n 85C v I
CBO
(25C) = 0,4 A, | thay
i t 250 n 350 v ngun cung cp thay i t 11,5 V
sang mc 12,5 V, th mc in p ra nh-nh khng mo
dng 85C khi V
CC
= 12V l bao nhiu?















































-174-

244. Hy thit k mch khuych i CE c h s khuych i
in p bng 8 v li ti 750 O. S dng mch hnh
P5.2 vi transistor c | = 300 v I
CBO
(25C) = 10 A. Xc
nh dao ng in p ra nh-nh ln nht khi nhit
tng ln 85C, | thay i t 250 n 350, v V
CC
= 24 V.

















































-175-

245. Hy thit k mch khuych i EF li ti 15 O khi | =
60, V
BE
= 0,7 V, I
CBO
(25C) = 1 A, V
CC
= 20 V, v A
i
= 8.
Nu nhit thay i t 25C n 85C, xc nh dao
ng in p ra nh-nh nhit 85C. S dng mch
hnh 5.7.

















































-176-

246. Hy thit k mch khuych i EF li ti 8 O, nh mch
hnh P5.3. c h s khuych i dng A
i
= 10. Xc
nh dao ng in p ra nh-nh nu nhit tng ln
n 75C. Cho bit rng I
CBO
(25C) = 0,5 A, V
CC
= 24 V,
v | thay i t 60 n 100.

















































-177-

247. Mch khuych i tng t nh hnh P5.3, c thit k
c h s khuych i dng 10
i
A = , v iu khin ti 20 O, s
dng ngun cung cp c n nh l 24 V 2%. Transistor
c chn c | thay i t 60 n 100; 0, 7 V
BE
V = ; v
(25 C) 1 A
CBO
I = . dao ng in p ra ln nht c th
nhn c l bao nhiu ti nhit t m 30C v ti dng
80C? Chn 24 V
CC
V = .
[p s: 9,31 V(p- p) for high temperature;
11, 7 V(p- p) for low temperature (worst case high temperature) ]











































-178-

248. Mt mch khuych i tng t mch hnh P5.2, l c
thit k s dng nhit trong khong t 80C n -
50C. Ngun pin l 24 V, chn transistor c | thay i t
200 n 300, v I
CBO
(25C) = 2 A. dao ng in p
ra ln nht l bao nhiu c h s khuych i in p l
10 nu ti l 1 kO?



















































-179-

TM TT NI DUNG V OP-AMP & MCH

4-1. Op-Amp c bn c ba in cc khng bao gm in cc ngun v ni t: u vo o (-),
u vo khng o (+), v u ra.
Mch khuych i vi sai to thnh tng vo ca op-amp.
Phn ln cc op-amp yu cu c hai in p ngun cung cp dng v m.
Op-amp l tng c tr khng vo v cng, tr khng ra bng khng, h s khuych i in
p vng h v cng, v rng bng tn v cng.
Op-amp thc t c tr khng vo rt cao, tr khng ra rt thp, v h s khuych i vng h
rt cao.
4-2. Hai kiu hot ng vi tn hiu vo ca op-amp l kiu vi sai v kiu chung.
Kiu chung xy ra khi cc in p ng pha bng nhau t vo c hai u vo.
T s loi b tn hiu ng pha ( CMRR) l php o kh nng ca op-amp loi b cc tn
hiu vo ng pha.
H s khuych i vng-h l h s khuych i ca op-amp khi khng c kt ni hi tip
ngoi.
in p dch u vo s to ra in p sai lch u ra (khi khng c in p vo).
Dng phn cc u vo cng s to ra in p sai lch u ra (khi khng c in p vo).
Dng dch u vo l chnh lch gia hai dng phn cc.
Tc p ng tnh theo in p trn micro giy m ti in p ra ca op-amp c th thay
i p ng theo tn hiu vo xung.
Nhiu s lm gim hiu sut ca b khuych i do a vo tn hiu khng mong mun.
4-3. Hi tip m s c khi mt phn ca in p ra c a tr li u vo o, nn tn hiu s b
tr ra khi in p vo, v vy s lm gim h s khuych i in p nhng lm tng n
nh v rng bng tn.
4-4. C ba cu hnh op-amp c bn: o, khng o, v lp li-in p.
C ba cu hnh op-amp u s dng hi tip m.
H s khuych i in p vng-kn l h s khuych i ca op-amp khi c mch hi tip
ngoi.
4-5. Cu hnh mch khuych i khng o c tr khng vo cao hn v tr khng ra thp hn so
vi ca chnh op-amp (khng c hi tip).
Cu hnh mch khuych i o c tr khng vo gn bng vi in tr vo
i
R v tr khng
ra xp x bng vi tr khng ra ca chnh op-amp.
Mch lp in p c tr khng vo cao nht v tr khng ra thp nht trong s ba cu hnh
khuych i.
4-6. Tt c op-amp thc t u c cc dng phn cc u vo v cc mc in p dch u vo
nh to ra cc mc in p sai lch u ra nh.
nh hng ca dng phn cc u vo c th c b bi cc in tr ngoi.
in p dch u vo c th c b bng th hiu ngoi mc gia hai chn chnh 0 c cho
trn v ca IC op-amp v nh khuyn co ca hng sn xut.
4-7. H s khuych i vng-kn lun lun thp hn so vi h s khuych i vng-h.
Kiu chung xy ra khi cc in p ng pha bng nhau t vo c hai u vo.
H s khuych i gia bng ca op-amp s m rng dn n dc .
H s khuych i ca op-amp s gim khi tng tn s cao hn tn s ti hn.
c tuyn p ng vng-h ca mch op-amp c b s roll-off mc 20 dB/decade nu
trn mc f
c
.
4-8. Mch tr RC bn trong l phn c sn cc tng khuych i lm cho h s khuych i roll
off khi tn s tng ln.
Mch tr RC trong cng gy ra dch pha gia tn hiu u vo v u ra.
Hi tip m s lm cho h s khuych i thp hn v lm tng rng bng tn.
Tch ca h s khuych i v rng bng tn l khng i i vi mt op-amp cho.
Tch rng bng tn-h s khuych i bng tn s m ti h s khuych i in p = 1
-180-

4-9. i vi b so snh bng op-amp, khi in p u vo vt qu mc in p tham chiu qui
nh, th trng thi u ra s thay i.
tr s cho kh nng khng nhiu ca op-amp.
B so snh s chuyn mch n mt trng thi khi tn hiu vo t n im kch khi trn
(UTP) v tr li trng thi khc khi tn hiu vo gim xung di im kch khi di (LTP).
Mc chnh lch gia UTP v LTP l mc in p tr.
Cc gii hn bin l bin in p ra ca b so snh.
4-10. in p ra ca b khuych i tnh tng t l vi tng cc in p vo.
B khuych i php tnh trung bnh l b khuych i tnh tng c h s khuych i vng-
kn bng nghch o ca s lng cc mc vo.
B cng t l, trng s khc nhau c th quy nh n tng u vo, nn lm cho tn hiu vo
cao hn hoc thp hn u ra.
4-11. Php tnh tch phn ca tn hiu vo bc s to ra tn hiu ra rng ca c dc t l vi bin
.
Php tnh vi phn ca tn hiu vo rng ca s to ra tn hiu ra bc c bin t l vi
dc.
































-181-

Cc m hnh u vo v thng s ca op-amp

ol
cm
A
CMRR
A
= (4-1) T s loi b tn hiu ng pha.
20log
ol
cm
A
CMRR
A
| |
=
|
\ .
(4-2) T s loi b tn hiu ng pha (dB).

1 2
BIAS
2
I I
I
+
= (4-3) Dng phn cc u vo.

OS 1 2
I I I = (4-4) Dng dch u vo.

OS OS in
V I R = (4-5) in p dch.

OUT(error) OS v in
V A I R = (4-6) in p dch u ra.
Slew rate
out
V
t
A
=
A
(4-7) Slew rate.

Cc cu hnh op-amp

(NI)
1
f
cl
i
R
A
R
= + (4-8) H s khuych i in p (khng o).

(VF)
1
cl
A = (4-9) H s khuych i in p (mch lp in p).

(I)
f
cl
i
R
A
R
= (4-10) H s khuych i in p (o).

Cc tr khng vo v ra ca mch op-amp

(NI)
(1 )
in ol in
Z A B Z = + (4-11) Tr khng vo (khng o).
(NI)
1
out
out
ol
Z
Z
A B
=
+
(4-12) Tr khng ra (khng o).
(VF)
(1 )
in ol in
Z A Z = + (4-13) Tr khng vo (mch lp-in p).
(VF)
1
out
out
ol
Z
Z
A
=
+
(4-14) Tr khng ra (mch lp-in p).
(I) in i
Z R ~ (4-15) Tr khng vo (o).
(I)
1
out
out
ol
Z
Z
A B
=
+
(4-16) Tr khng ra (o).











-182-

p ng tn s ca mch op-amp

cu
BW f = (4-17) rng bng tn ca op-amp.
2 2
1
1
out
in
c
V
V
f f
=
+
(4-18) suy gim ca mch RC.
( )
2 2
1
ol mid
ol
c
A
A
f f
=
+
(4-19) H s khuych i in p vng-h.
1
tan
c
f
f
u

| |
=
|
\ .
(4-20) dch pha ca mch RC.
( ) ( ) ( )
(1 )
c cl c ol ol mid
f f BA = + (4-21) Tn s ti hn ca mch op-amp vng-kn.
( )
(1 )
cl ol ol mid
BW BW BA = + (4-22) rng bng tn ca mch op-amp vng-kn.
( ) T cl c cl
f A f = (4-23) rng bng tn khi h s khuych ai-n v.

B so snh

( )
2
UTP (max)
1 2
out
R
V V
R R
= +
+
(4-24) im kch khi trn.
( )
2
LTP (max)
1 2
out
R
V V
R R
=
+
(4-25) im kch khi di.
HYS UTP LTP
V V V = (4-26) in p tr.

B khuych i tnh tng

( )
OUT IN1 IN2 IN
+ +
n
V V V V = + (4-27) B cng n-mc vo.
( )
OUT IN1 IN2 IN
+ +
f
n
R
V V V V
R
= + (4-28) B cng vi h s khuych i.
OUT IN1 IN2 IN
1 2
+ +
f f f
n
n
R R R
V V V V
R R R
| |
= +
|
\ .
(4-29) B cng t l c h s khuych i.

B tch phn v vi phn

OUT in
i
V V
t RC
A
=
A
(4-29) Tc thay i tn hiu ra ca b tch phn.
C
out f
V
V R C
t
| |
=
|
\ .
(4-30) in p ra ca b vi phn vi tn hiu vo rng ca.






-183-

CU HI v OP-AMP & mch

1. Mt vi mch op-amp (IC) c
(a) hai u vo v 2 u ra (b) mt u vo v 1 u ra (c) hai u vo v 1 u ra


2. c tnh no sau y khng nht thit phi p dng cho op-amp?
(a) h s khuych i cao (b) cng sut thp (c) tr khng vo cao (d) tr khng ra thp


3. Mt b khuych i vi sai
(a) l mt b phn ca op-amp (b) c mt u vo v mt u ra
(c) c hai u ra (d) gm c (a) v (c)


4. Khi op-amp lm vic kiu vi sai u vo-n [single-ended]
(a) u ra c ni t (b) mt u vo c ni t v tn hiu t vo u vo cn li
(c) c hai u vo c ni vi nhau (d) tn hiu ra khng b o pha


5. kiu vi sai u vo-kp [double-ended differential mode], c
(a) hai tn hiu c t vo gia 2 u vo (b) h s khuych i bng 1
(c) cc tn hiu ra c bin khc nhau (d) ch s dng mt ngun cung cp


6. kiu-chung [common-mode]
(a) c 2 u vo c ni t (b) cc u ra c ni vi nhau
(c) mt tn hiu ng nht xut hin c 2 u vo (d) cc tn hiu ra l cng pha


7. H s khuych i ca u vo kiu-chung l
(a) rt cao (b) rt thp (c) lun lun bng 1 (d) khng th xc nh


8. Nu A
v(d)
= 3500 v A
cm
= 0,35, th CMRRbng
(a) 1225 (b) 10 000 (c) 80 dB (d) c (b) v (c)


9. Vi mc 0V trn c hai u vo, mt op-amp l tng s c mc ra bng vi
(a) in p ngun cung cp dng (b) in p ngun cung cp m (c) mc 0 (d) CMRR


10. Theo cc gi tr lit k, gi tr thc t nht cho h s khuych i vng h ca mt op-amp l
(a) 1 (b) 2000 (c) 80dB (d) 100 000


11. Mt op-amp c cc mc dng phn cc l 50A v 49,3A. Dng dch u vo bng
(a) 700nA (b) 99,3A (c) 49,7A (d) tt c u sai


12. Tn hiu ra ca mt op-amp thc t c khong tng 8V trong 12s. Tc p ng [slew rate] l
(a) 96V/s (b) 0,67V/s (c) 1,5V/s (d) ngoi cc gi tr trn

-184-

13. Mc ch ca chnh-0 [offset nulling] l
(a) gim h s khuych i (b) cn bng cc tn hiu vo
(c) lm cho in p sai lch u ra bng 0 (d) c (b) v (c) u ng


14. Vic s dng mch hi tip m
(a) s lm gim h s khuych i in p ca op-amp (b) s to ra dao ng trong op-amp
(c) s to ra kh nng hot ng tuyn tnh (d) gm c (a) v (c)


15. i vi mt op-amp c hi tip m, tn hiu ra l
(a) bng vi tn hiu vo (b) s c tng ln
(c) s c cung cp tr li u vo o (d) s c cung cp tr li u vo khng o


16. Mt mch khuych i khng o c 1, 0 k
i
R = v 100 k
f
R = . H s khuych i vng kin
bng
(a) 100 000 (b) 1000 (c) 101 (d) 100


17. Nu in tr hi tip cu hi 16 b h mch, th h s khuych i in p
(a) s tng ln (b) s gim xung (c) s khng nh hng(d) ty thuc vo R
i



18. Mt mch khuych i o c h s khuych i vng kn l 25. Op-amp c h s khuych i
vng h l 100 000. Nu op-amp khc c h s khuych i vng h bng 200 000 c thay th
vo mch, th h s khuych i vng kn
(a) s gp i (b) gim xung = 12,5(c) vn mc 25 (d) s hi tng ln


19. B lp in p
(a) c h s khuych i bng 1 (b) l b khuych i khng o
(c) khng c in tr hi tip (d) c tt c cc iu trn


20. Hi tip m
(a) s lm tng tr khng vo v ra (b) s lm tng tr khng vo v rng bng tn
(c) s lm gim tr khng ra v rng bng tn
(d) khng nh hng n cc tr khng vo v rng bng tn


21. Vic b dng phn cc
(a) s lm gim h s khuych i (b) gim in p sai lch u ra
(c) lm tng rng bng tn (d) khng nh hng n cc thng s


21. rng bng tn ca mt b khuych i ac c tn s thp nht bng 1kHz v tn s cao nht
bng 10kHz l
(a) 1kHz (b) 9kHz (c) 10kHz (d) 11kHz

22. Di h s khuych i vng-h gia bng ca mt op-amp
(a) s m rng t tn s thp nht n tn s cao nht (b) s m rng t 0Hz n tn s cao nht
(c) rolls off mc 20dB/decade bt u ti mc 0Hz (d) gm c (b) v (c)
-185-

23. Tn s ti mc h s khuych i vng h bng 1 c gi l
(a) tn s ti hn trn (b) tn s ct
(c) tn s cng hng (d) tn s ti h s khuych i bng 1


24. dch pha thng qua op-amp c to ra do
(a) cc mch RC bn trong (b) cc mch RC bn ngoi
(c) rolls off h s khuych i (d) hi tip m


25. Mi mch RC trong mt op-amp
(a) s lm cho h s khuych i thnh roll off mc 6dB/octave
(b) s lm cho h s khuych i thnh roll off mc 20dB/octave
(c) s lm gim h s khuych i trung bnh 3dB
(d) gm c (a) v (b)


26. Nu op-amp c h s khuych i vng h khong gia l 200 000 v tn s tng ng vi h s
khuych i bng 1 l 5 MHz, tch rng bng tn-h s khuych i l
(a) 200 000Hz (b) 5 000 000Hz (c) 1 x 10
12
Hz (d) khng xc nh c


27. rng bng tn ca mt b khuych i ac c tn s gii hn di bng 1 kHz v tn s gii
hn trn l 10 kHz l
(a) 1 kHz (b) 9 kHz (c) 10 kHz (d) 011 kHz

28. rng bng tn ca mt b khuych i dc c tn s gii hn trn bng 100 kHz l
(a) 100kHz (b) khng xc nh (c) v cng (d) 0kHz

29. Khi s dng hi tip m, tch h s khuych i- rng bng tn ca op-amp
(a) tng ln (b) gim xung (c) vn nh c (d) s thay i

30. Nu op-amp c h s khuych i vng-kn l 20 v tn s ti hn trn l 10 MHz, tch rng
bng tn-h s khuych i l
(a) 200 MHz (b) 10 MHz (c) tn s h s khuych i = 1 (d) gm c (a) v (c)

31. b d mc-0, mc ra s thay i trng thi khi mc vo
(a) dng (b) m (c) ngang qua mc 0 (d) c tc thay i bng 0


32. B d mc-0 l mt ng dng ca
(a) b so snh (b) b vi phn (c) khuych i tng (d) diode

33. Nhiu u vo ca b so snh c th lm cho u ra
(a) b cht mt trng thi (b) chuyn v 0
(c) thay i tht thng gia hai trng thi (d) to ra tn hiu nhiu c khuych i


34. nh hng ca nhiu c th gim c bng cch
(a) dng in p ngun cung cp thp hn (b) s dng hi tip dng
(c) s dng hi tip m (d) s dng phng php lm tr (e) c (b) v (d)

-186-

35. Mt b so snh c tr
(a) c mt im kch khi (b) c hai im kch khi
(c) c im kch khi c th thay i (d) l ging nh mch t


36. Trong mt b so snh c tr
(a) in p phn cc c t gia hai u vo
(b) ch s dng mt ngun cung cp
(c) cung cp mt phn tn hiu ra tr li u vo o
(d) cung cp mt phn tn hiu ra tr li u vo khng o



37. Vic s dng bin ra b so snh l
(a) lm cho mch so snh hot ng nhanh hn (b) duy tr mc ra dng
(c) gii hn cc mc ra (d) n nh mc ra


38. B khuych i tnh tng
(a) ch c mt u vo (b) ch c hai u vo
(c) s lng u vo bt k


39. Nu h s khuych i in p i vi mi u vo ca b khuych i tnh tng c in tr hi
tip l 4,7 kO bng n v, th cc in tr u vo cn phi c gi tr bng
(a) 4,7 kO (b) 4,7 kO chia cho s lng u vo (c) 4,7 kO ln s lng u vo


40. B khuych i php tnh trung bnh c 5 u vo. T s
f i
R R cn phi bng
(a) 5 (b) 0,2 (c) 1



41. b khuych i t l, cc in tr u vo l
(a) tt c u c cng tr s (b) tt c c tr s khc nhau
(c) t l vi trng s ca tng u vo ca n(d) c quan h theo c s 2


42. b tch phn l tng, phn t hi tip l
(a) in tr (b) t in (c) diode n p (d) mch phn p



43. Vi tn hiu vo xung, tn hiu ra ca b tch phn l
(a) xung (b) sng tam gic (c) xung nhn (d) rng ca


44. Tc thay i in p ra ca b tch phn p ng vi tn hiu vo xung c thit lp bng
(a) hng s thi gian RC (b) bin ca tn hiu vo xung
(c) dng chy qua t (d) tt c cc c tnh trn

-187-

45. b vi phn, phn t hi tip l
(a) in tr (b) t in (c) diode n p (d) mch phn p



46. Tn hiu ra ca mch vi phn t l vi
(a) hng s thi gian RC (b) tc thay i ca tn hiu vo
(c) bin ca tn hiu vo (d) c (a) v (b)



47. Khi p t sng tam gic n u vo ca mch vi phn, th tn hiu ra l
(a) mc dc (b) sng tam gic b o pha
(c) sng vung (d) hi bc nht ca sng tam gic


48. to thnh mt b khuych i o, ta cn phi c
(a) mt op-amp cng vi mch hi tip (b) hai op-amp v by in tr
(c) ba op-amp v by t in (d) ba op-amp v by in tr


49. Thng thng, b khuych i o c in tr ngoi c s dng
(a) thit lp tr khng vo (b) thit lp h s khuych i in p
(c) thit lp h s khuych i dng in (d) giao din vi thit b



50. B khuych i o c s dng ch yu trong
(a) mi trng nhiu-cao (b) thit b y-t
(c) cc thit b o lng (d) cc mch lc



51. B khuych i cch ly c s dng ch yu trong
(a) b iu khin t xa, cc v tr cch in
(b) h thng cch ly mt tn hiu n l ra khi nhiu tn hiu khc nhau
(c) cc ng dng m trong c cc mc in p cao v trong thit b c nhy cao
(d) c (c) v (d)



52. Hai b phn ca b khuych i cch ly c bn l
(a) b khuych i v b lc (b) tng vo v tng ghp ni
(c) tng vo v tng ra (d) tng khuych i v tng dch [offset]



53. Cc tng ca nhiu b khuych i cch ly l c kt ni bi
(a) dy ng (b) t in
(c) ng truyn vi-ba (d) cc vng dng in

-188-

54. Thng s cho php b khuych i cch ly khuych i in p tn hiu nh trong mi trng c
in p nhiu ln hn nhiu l
(a) CMRR ca b khuych i cch ly (b) h s khuych i cao ca b khuych i
(c) tr khng vo cao ca b khuych i (d) ghp t gia u vo v u ra


55. Thut ng OTA
(a) operational transistor amplifer (b) operational transformer amplifier
(c) operational transconductance amplifier (d) output transducer amplifier


56. i vi OTA, h dn [transconductance] c iu khin bi
(a) in p ngun cung cp dc (b) in p tn hiu vo
(c) qu trnh ch to (d) dng phn cc


57. H s khuych i ca mch OTA c thit lp bi
(a) in tr hi tip (b) ch do h dn
(c) h dn v in tr ti (d) dng phn cc v in p ngun cung cp


58. OTA v c bn l
(a) b khuych i in p thnh dng in (b) b khuych i dng thnh p
(c) b khuych i dng thnh dng (d) b khuych i in p thnh p


59. Hot ng ca b khuych i logarithmic l da trn
(a) hot ng phi tuyn ca op-amp (b) c tnh logarithmic ca tip gip pn
(c) thng s nh thng ngc ca tip gip pn (d) s np v x theo logarithmic ca mach RC



60. Nu tn hiu vo a n mch khuych i log l x, th tn hiu ra l t l vi
(a)
x
e (b) ln x (c)
10
log x (d)
10
2, 3log x (e) c (a) v (c) (f) c (b) v (d)


61. Nu tn hiu vo a n mch khuych i antilog l x, th tn hiu ra l t l vi
(a)
ln x
e (b)
x
e (c) ln x (d)
x
e

62. Mt ngun dng-hng s cung cp dng khng i n ti
(a) theo tt c cc gi tr ca dng in (b) theo tt c cc gi tr ca in tr ti
(c) theo tt c cc gi tr ca in tr ti trong phm vi gii hn xc nh


63. Mch d mc nh bao gm
(a) b so snh, transistor, v t in (b) b so snh, diode, v t in
(c) b so snh, diode, v cun in cm (d) b tch phn, diode, v t in

-189-

BI TP

BI TP C BN

Mc 4-1 Gii thiu v op-amp

1. Hy so snh op-amp thc t vi op-amp l tng.





2. Cho hai op-amp c thng s di y. Hy chn mt op-amp thch hp nht.
Op-amp 1: 5 M
in
Z = ; 100
out
Z = ; 50 000
ol
A =
Op-amp 2: 10 M
in
Z = ; 75
out
Z = ; 150 000
ol
A =


Mc 4-2 Cc m hnh u vo ca op-amp v cc thng s

3. Hy nhn dng kiu m hnh u vo ca mi op-amp hnh 12.52.









4. Mt op-amp c CMRR= 250 000. Hy chuyn i CMRR theo decibel.

5. H s khuych i vng h ca op-amp l 175 000. H s
khuych i ng pha (kiu chung common mode) l
0,18. Hy xc nh CMRR theo decibel.
6. Trang s liu ca mt op-amp cho bit CMRR bng
300 000 v A
ol
bng 90 000. H s khuych i kiu-
chung l bao nhiu?
7. Xc nh dng phn cc,
BIAS
I cho bit rng cc dng vo
op-amp l 8,3 A v 7,9 A.
8. Hy cho bit s khc bit gia dng phn cc u vo v
dng dch u vo, v tip theo hy tnh dng dch u vo
theo thng s cho bi tp 7.
9. Hnh 12.53, th hin in p ra ca op-amp p ng theo tn
hiu vo bc (xung). Tc p ng [slew rate] l bao
nhiu?



10. in p u ra ca mt op-amp thay i t -10V n +10V
trong khong thi gian bao nhiu nu tc p ng [slew
rate] = 0,5V/s?

-190-

Mc 4-3 Op-amp c hi tip m

11. Hy cho bit cc kiu mch
op-amp hnh 12.54.



12. Mch khuych i khng o
c R
i
= 1,0kO v R
f
= 100kO.
Hy xc nh V
f
v B nu V
out

= 5V.

13. Cho mch khuych i nh hnh 12.55, xc nh cc thng s sau:
(a) A
cl(NI)


(b) V
out


(c) V
f



14. Hy xc nh h s khuych i vng-kn ca mi mch hnh 12.56.









15. Tnh tr s ca R
f
c h
s khuych i vng kn
c ghi trong mi mch
khuych i hnh 12.57.







16. Tnh h s khuych i ca mi mch khuych i hnh 12.58












-191-

17. Nu t tn hiu 10mV rms vo mi mch khuych i hnh 12.58, cc in
p ra l bao nhiu? v quan h v pha gia tn hiu vo v ra l nh th no?






18. T mch hnh 12.59, hy xc nh gi tr ca mi i lng sau:
(a) I
in


(b) I
f


(c) V
out

(d) H s khuych i vng-kn


Mc 4-4 Cc nh hng ca hi tip m ln cc tr khng ca op-amp

19. Hy xc nh cc tr khng vo v ra ca mi kiu mch khuych i hnh 12.60.












20. Hy xc nh cc tr khng vo v ra ca mi kiu mch khuych i hnh 12.61.










21. Hy xc nh cc tr khng vo v ra ca mi kiu mch khuych i hnh 12.62.










-192-

Mc 4-5 Dng phn cc v in p dch

22. Mt b lp li-in p c cung cp bi ngun in p
c in tr ngun l 75O.
(a) Tr s ca in tr b cn thit cho dng phn cc l
bao nhiu, v in tr cn phi c lp u?

(b) Nu hai mc dng vo sau khi b l 42A v 40A,
th in p sai lch u ra l bao nhiu?

23. Hy xc nh tr s ca in tr b cho mi
mch hnh 12.60, v cho bit cch mc
in tr.
24. Mt b lp-in p bng op-amp c th c
in p dch u vo l 2nV. in p sai
lch u ra l bao nhiu?
25. in p dch u vo ca mt op-amp l bao
nhiu nu c mc in p ra dc l 35mV
c o khi in p vo bng 0? Cho h s
khuych i vng-h ca op-amp l 200
000.

Mc 4-6 p ng tn s vng-h v p ng pha

26. H s khuych i vng-h gia bng [midrange] ca op-amp l 120dB. Mch hi tip m lm
suy gim h s khuych i nh mc mt lng bng 50dB. H s khuych i vng-kn l bao
nhiu?


27. Tn s ti hn trn ca p ng vng-h ca op-amp l 200Hz. Nu h s khuych i nh mc
l 175 000, th h s khuych i l tng tng ng mc 200Hz l bao nhiu? H s khuych
i thc t l bao nhiu? rng bng tn vng-h ca op-amp l bao nhiu?





28. Mt mch lm tr RC c tn s ti hn l 5kHz. Nu tr s in tr l 1,0kO, th dung khng X
C
l
bao nhiu khi c f = 3kHz?



29. Hy xc nh suy gim ca mch tr RC vi f
c
= 12kHz cho mi tn s sau.
(a) 1kHz (b) 5kHz (c) 12kHz (d) 20kHz (e) 100kHz





30. H s khuych i vng-h gia bng ca mt op-amp l 80 000. Nu tn s ti hn vng-h l
1kHz, th h s khuych i vng-h tng ng vi mi tn s sau l bao nhiu?
(a) 100kHz (b) 1kHz (c) 10kHz (d) 1MHz


-193-

31. Xc nh dch pha thng qua mi mch hnh 12.63, ti tn s l 2kHz.







32. Mt mch tr RC c tn s ti hn l 8,5kHz. Xc nh dch pha theo mi tn s v v th
ca gc pha theo tn s.
(a) 100Hz (b) 400H (c) 850Hz
(d) 8,5kHz (e) 25kH (c) 85kHz








33. Mt mch op-amp c ba tng khuych i bn trong vi cc h s khuych i nh mc l 30dB,
40dB, v 20dB. Mi tng cng c tn s ti hn tng ng l: f
c1
= 600Hz, f
c2
= 50kHz, v f
c3
=
200kHz.
(a) H s khuych i vng h nh mc ca b khuych i l bao nhiu, tnh theo dB?
(b) dch pha tng thng qua b khuych i l bao nhiu, k c s o pha, khi tn s tn
hiu l 10kHz?






34. Tc gim [roll-off rate] bi tp 33 gia hai tn s sau l bao nhiu?
(a) 0Hz v 600Hz (b) 600Hz v 50kHz
(c) 50kHz v 200kHz (d) 200kHz v 1MHz





Mc 4-7 p ng tn s vng-kn

35. Hy xc nh h s khuych i gia bng [midrange gain] theo dB ca mi mch khuych i
hnh 12.64. Cc h s khuych i l vng-kn hay vng-h?










-194-

36. Mt mch khuych i c h s khuych i vng-h nh mc l 180 000 v tn s ti hn vng
h l 1500Hz. Nu suy gim ca mch hi tip l 0,015, rng bng tn vng-kn l bao
nhiu?




37. Cho bit rng f
c(ol)
= 750Hz, A
ol
= 89dB, v
f
c(cl)
= 5,5kHz, xc nh h s khuych i
vng kn theo dB.

38. rng bng tn tng ng vi h s khuych i bng 1 bi tp 37 l bao nhiu?


39. Vi mi mch khuych i hnh 12.65, hy xc nh h s khuych i vng-kn v rng
bng tn. Cc op-amp trong mi mch c h s khuych i vng-h l 125dB v rng bng
tn tng ng vi h s khuych i bng 1 l 2,8MHz.















40. Mch khuych i no hnh 12.66 c rng bng tn nh nht?









Mc 4-8 Cc b so snh

41. Mt op-amp c h s khuych i vng-h bng 80 000. Mc tn hiu ra bo ha ln nht ca cu
kin l 12 V khi in p ngun cung cp dc l 15 V. Nu t in p chnh lch gia hai u
vo l 0,15 Vrms, th gi tr nh-nh ca in p ra l bao nhiu?




-195-

42. Hy xc nh mc tn hiu ra (mc dng ln nht hoc mc m ln nht) cho mi b so snh
hnh 13.60.






43. Hy tnh
UTP
V v
LTP
V cho mch so snh nh hnh 13.61.
( )
10 V
out max
V = .


44. Mc in p tr mch hnh 13.61, l bao nhiu?

45. V dng sng in p ra cho mi mch hnh 13.62, theo tn hiu vo. Th hin cc mc in
p.







46. Xc nh in p tr cho mi b so snh
hnh 13.63. Cc mc in p ra ln nht l
11 V.




47. Mt diode zener 6,2 V c ni t u ra v
u vo o mch hnh 13.61, vi cathode
mc ti u ra. Cc mc ra dng v m l
nh th no?




-196-

48. Hy xc nh dng sng in p ra mch
hnh 13.64.





Mc 4-9 B khuych i tnh tng

49. Hy xc nh in p ra cho mi mch hnh 13.65.






50. Xt mch hnh 13.66. Xc nh cc thng s sau:
(a)
1 R
V v
2 R
V

(b) Dng chy qua
f
R

(c)
OUT
V
51. Hy tnh gi tr ca
f
R cn thit to ra tn hiu ra bng
nm ln tng ca cc mc vo mch hnh 13.66.


52. Hy v mch khuych i tnh tng c gi tr
trung bnh ca tm in p vo. S dng cc in
tr u vo l 10 kO cho mi u vo.




53. Hy tnh in p ra khi cc in p vo cho trong
mch hnh 13.67, t vo b cng t l. Dng
chy qua
f
R l bao nhiu?





-197-

54. Hy xc nh gi tr ca cc in tr vo cn thit trong mch cng chia thang 6-u vo c
u vo trng s thp nht l 1 v mi u vo lin tip c trng s gp i u vo trc . S
dng 100 k
f
R = .




Mc 4-10 B tch phn v vi phn

55. Hy xc nh tc thay i ca in p ra p ng
theo tn hiu vo bc t vo b tch phn nh mch
hnh 13.68.







56. Dng sng tam gic c t vo u vo ca mch
hnh 13.69. Hy xc nh tn hiu ra v v dng
sng lin quan vi tn hiu vo.







57. Cng dng in qua t bi tp 56 l bao nhiu?




58. Dng sng tam gic c in p nh-nh l 2 V v
chu k l 1 ms c t vo mch vi phn hnh
13.70a. in p ra l bao nhiu?








-198-

59. Khi bt u v tr 1 mch hnh 13.70a, chuyn mch chuyn qua v tr 2 v duy tr v tr
10 ms, sau tr li v tr 1 trong thi gian 10 ms, v v. v. . . Hy v dng sng ra kt qu nu
gi tr ban u ca n l 0 V. Cc mc ra bo ha ca op-amp l 12 V.









Mc 4-11 Sai hng trong mch OP-AMP

60. Hy xc nh sai hng c th xy ra nht theo tng hin tng c
trong mch hnh 12.67, vi tn hiu t vo mch l 100mV.
(a) Khng c tn hiu ra.


(b) Tn hiu ra b xn nhiu c hai pha dng v m ca
dng sng.


61. Hy xc nh nh hng ln tn hiu ra nu mch hnh 12.67, c cc sai hng sau (mt sai hng
trong mt ln xt).
(a) Chn u ra ca op-amp b ngn mch vi chn u vo o.

(b) R
3
h mch

(c) R
3
= 10kO thay cho 910O.

(d) R
1
v R
2
l c hon i

62. Trn bng mch hnh 12.68, (cc) sai hng no s c nu u gia (u trt) ca bin tr
100kO b t?
















-199-

63. Cc dng sng cho hnh 13.71a, l c quan st ti cc im c ch r hnh 13.71b.
Mch lm vic c ng khng? Nu khng, th sai hng c th l nh th no?


















64. Chui cc mc in p nh hnh 13.72, c a n b khuych i tnh tng v quan st
dng sng ra cng c ch r. Trc tin, hy xc nh dng sng ra l ng. Nu khng ng,
hy xc nh sai hng?.





















-200-

65. Cc in p rng ca cho c t vo mch op-amp hnh 13.73. Dng sng in p ra
cho c ng khng? Nu khng ng, th sai hng l g?
















66. Cc u vo ca DAC nh th hin hnh 13.27, s to ra dng sng ra nh th hin hnh
13.74. Xc nh li trong mch.



















-201-

BI TP NG DNG H THNG HOT NG

67. Trong mch khuych i hnh 12.47, hy lit k cc sai hng c th c lm cho tng y-ko
hot ng khng tuyn tnh (mo dng tn hiu).























68. Hy cho bit iu g s xy ra nu in tr 100 O c lp khng ng vo v tr ca R
2
trong
mch hnh 12.47?














69. in p o trn u ra ca mch khuych i hnh 12.47, l bao nhiu nu diode D
1
b h mch?








-202-

BI TP V THNG S CA OP-AMP

70. Tham kho phn phiu s liu ca 741 (LM741) hnh 12.69. Xc nh in tr (tr khng) vo
ca mt mch khuych i khng o s dng op-amp 741 vi R
f
= 47kO v R
i
= 470O. S
dng cc tr s in hnh.





















































-203-

71. Tham kho phn phiu s liu hnh 12.69. Xc
nh tr khng vo ca mt op-amp LM741 c
mc nh mt mch khuych i o vi h s
khuych i in p vng-kn bng 100 v R
f
=
100kO.


72. Tham kho phn phiu s liu hnh 12.69, v xc
nh h s khuych i vng-h ca LM741 c
tnh theo t s gia in p ra i vi in p vo.


73. Tham kho phn phiu s liu hnh 12.69. Khong
thi gian in hnh l bao nhiu in p ra ca
LM741 chuyn t - 8V n + 8V p ng theo tn
hiu vo xung?



BI TP NNG CAO

74. Hy thit k mt mch khuych i khng o c h s khuych i in p vng-kn thch hp
l 150 v tr khng vo thp nht l 100MO s dng op-amp 741. Thit k bao gm c vic b
dng phn cc.













75. Hy thit k mt mch khuych i o s dng op-amp 741. H s khuych i in p cn phi
t c l 68 5% v tr khng vo cn phi xp x 10kO. Thit k bao gm c vic b dng
phn cc.













-204-

76. Hy thit k mt mch
khuych i khng o vi
tn s ti hn trn, f
cu
l
10kHz s dng op-amp 741.
Cc ngun cung cp dc l
15V. Tham kho c tuyn
hnh 12.70. Thit k bao gm
c vic b dng phn cc.








77. Theo mch c thit k bi tp 76, xc nh in tr ti nh nht nu dao ng in p
ra thp nht cn phi c l 10V. Tham kho cc c tuyn ca phiu s liu hnh 12.71.


















78. Hy thit k mch khuych i o bng op-amp 741 nu h s khuych i in p nh mc l
50 v cn phi c rng bng tn l 20kHz. Bao gm c vic b dng phn cc.










79. H s khuych i vng-kn ln nht l bao nhiu
m c th nhn c vi op-amp 741 nu rng
bng tn yu cu khng thp hn 5kHz?



-205-

BI TP B SUNG PHN OP-AMP

Vi cc bi tp t 80 n 89, hy xc nh mc in p ra v
o
theo in p vo cho mi
mch th hin hnh v tng ng.
80.









81.










82.










83.









84.








-206-

85.











86.










87.











88.









89.









-207-

90. Da vo m hnh op-am l tng v gii c t s ca h s khuych i v
o
/v
i
cho mi mch
hnh P8.11.















91. Tnh in p ra, v
o
theo cc tn hiu vo ca cc mch hnh P8.12. S dng m hnh tnh
ton bng op-am l tng.





















Cc bi tp t 92 n 95, hy thit k mch khuych i bng op-amp c c cc quan h
th hin theo mi phng trnh.

92. v
O
= v
1
+ 10v
2
30v
a
100v
b














-208-

93. v
O
= 8v
1
+ 8v
2
4v
a
9v
b
















94. v
O
= 6v
1
+ 8v
2
3v
a
12v
b















95. v
O
= 3v
1
+ v
2
+ 6v
3
4v
a
5v
b

















-209-

96. Cho mch nh hnh P8.13, tr s no ca
2
v cn phi c
to ra 500 mV
o
v = khi
1
40 mV v = ;
1
50 k R = O ; v
2
150 k R = O? Tr s ca dng ra
L
i

l bao nhiu, theo
cc iu kin cho trn v 4 k
L
R = O?












97. B chuyn i s - tng t [digital-to-analog (D/A)] c th c
thit k bng cc op-amp nh hnh P8.14. S dng phng php
thit k mch tng bng op-amp thit k b bin i D/A 6-bit
c R
min
= 10kO. Chn V
CC
thch hp l bao nhiu nu mc logic 1
tng ng vi 0,2V?
Gi : S tng ng thp phn ca s nh phn a
5
a
4
a
3
a
2
a
1
a
0
,
trong a
i
c gi tr hoc bng 0 hoc 1, l
N = a
5
2
5
+ a
4
2
4
+

a
3
2
3
+

a
2
2
2
+

a
1
2
1
+ a
0
2
0
= 32a
5
+ 16a
4
+ 8a
3
+
4a
2
+ 2a
1
+ a
0





























-210-

98. Thit k mch my tnh tng t bng op-amp gii phng trnh sau:
9 3
dx
x
dt
+ =
S dng hai mch khuych i tnh tng v mt mch tch phn trong thit k















99. Thit k mch my tnh tng t bng op-amp gii hai phng trnh vi phn bc nht sau:
1 1 1
( )
dx
a x +b y f t
dt
+ =

2 2 2
( )
dy
b y +a x f t
dt
+ =
S dng hai mch op-amp tch phn hai mch khuych i tnh tng v trong thit k.



























-211-

100. Cc h s khuych i kiu vi sai v kiu-chung ca
b khuych i hnh 9.3, l bao nhiu, nu
1 2
5 k
C C
R R = = v 20 k
EE
R = ? Cho 12 V
CC
V = ;
0, 7 V
BE
V = ; 26 mV
T
V = ; v 12 V
EE
V = .
[p s: 0,125
c
A = ; 53,8
d
A = ]










101. Cc h s khuych i vi sai v kiu-chung ca b khuych
i hnh 9.6, l bao nhiu nu
1 2
5 k
C C
R R = = ;
15 V
CC
V = ; 15 V
EE
V = ; 0, 7 V
BE
V = ; 26 mV
T
V = ? Gi s
rng
TH EE
V R l ngun dng-hng vi
TH
10 k R = .
[p s: 0, 25
c
A = ; 69
d
A = ]














102. i vi ngun dng-hng th hin hnh 9.5, hy xc nh
E
R ,
1
R , v
2
R , trong 10 V
EE
V = ;
2 mA
EE
I = ; v 0, 7 V
BE
V = . Cng vi gi thit rng 26 mV
T
V = v | = 200.
[p s: 2, 33 k
E
R = ;
1
93 k R = ;
2
93 k R = ]
-212-



103. Hy thit k b ngun dng Widlar nhn c mc
dng khng i l 50 A. in p ngun l 20 V, v s
dng mc dng tham chiu l 4-mA. Hy xc nh tr s
in tr yu cu v
TH
R ca ngun dng khi
o
r (ca
transistor) = 50 kO; 0, 7 V
BE
V = ; v 26 mV
T
V = .
[p s:
1 2 TH
4,83 k; 2, 28 k; 269 k. R R R = = = ]











104. Hy thit k b ngun dng Wilson cung cp mc dng
100 A khi c 15 V
CC
V = . S dng cc transistor c | =
100; 0, 7 V
BE
V = ; v 26 mV
T
V = . Hy xc nh
TH
R khi
o
r ca transistor l 15 kO.
[p s:

REF 1 TH
100 A; =136 k; = 750 k. I R R = ]









-213-

105. Hy thit k mch dch mc (hnh 9.15b) chuyn i
C
V t 6 V v mc 2 V c mc in p
tng thch vi mch khuych i CE tip theo. S dng mch khuych i CE c 5 k
C
R =
v ngun dng l 4 mA vi 15 V
CC
V = v 15 V
EE
V = . S dng cc transistor c | = 200; v
0, 7 V
BE
V = .

[p s:
'
1 2
805 ; = 2,13 k; =110 k; = 69 k.
E E
R R R R = O ]





























-214-

106. Thit k mch khuych i bng op-amp 741 c in p ra cho bi phng trnh,
v
O
= 10v
1
+ 6v
2
+ 4v
3

in tr tng ng ti cc u vo m v dng l 10kO. Xc nh tr s ca mi in tr,
rng bng tn, in tr vo theo mi u vo ca b khuych i, v in tr ra ca mch.














107. Thit k mch khuych i bng op-amp 741 c in p ra cho bi phng trnh,
v
O
= - 10v
1
- 5v
2
- 4v
3

in tr tng ng ti cc u vo m v dng l 10kO. Xc nh tr s ca mi in tr,
rng bng tn, in tr vo theo mi u vo ca b khuych i, v in tr ra ca mch.














108. Thit k mch khuych i bng op-amp 741 c in p ra cho bi phng trnh,
v
O
= 10v
1
+ 6v
2
- 3v
3
4v
4
in tr tng ng ti cc u vo m v dng l 10kO. Xc nh tr s ca mi in tr,
rng bng tn, in tr vo theo mi u vo ca b khuych i, v in tr ra ca mch.














-215-

i vi cc bi tp t 109 n 118, l thit k cc mch bng op-amp 741 to ra in p ra,
v
O
, t cc in p vo: v
1
, v
2
, v v
3
. Phi m bo cn bng cc dng phn cc trong mi thit k.
i vi mi thit k, hy tnh in tr vo theo tng u vo, in tr ra, v rng bng tn.
in tr vo cn phi t nht l 100MO, cn rng bng tn cn phi ln hn 20kHz. C th
phi s dng nhiu op-amp trong mt s thit k.

109. v
O
= 700v
1
















110. v
O
= v
1
/700
















111. v
O
= - 700v
1















-216-

112. v
O
= - v
1
/700






113. v
O
= v
1
v
2











114. v
O
= 10v
1
v
2











115. v
O
= v
1
10v
2











116. v
O
= v
1
+ 700v
2










-217-

117. v
O
= - (v
1
+ 700v
2
)










118. v
O
= v
1
- 2v
2
+ 3v
3












Cc bi tp t 119 n 124 l thit k cc h thng bng nhiu op-amp 741 c in p ra, v
o
,
t cc in p vo, v
1
, v
2
, v v
3
. in tr vo i vi mi u vo cn phi l 100MO hoc ln
hn, v cc u vo s khng c ghp trc tip vi u vo khc. i vi mi thit k, hy
tnh R
in
, R
out
, v rng bng tn. Cc mch cn phi c rng bng tn nh nht l 50kHz.

119. v
O
= 3(v
1
+ v
2
)












120. v
O
= 3(v
1
- v
2
)












-218-

121. v
O
= 1000v
1
- 300v
2













122. v
O
= 500v
1
- 50v
2














123. v
O
= 70v
1

1
7
v
2














124. v
O
= 100v
1
+ 50v
2













-219-

BI TP V PHN VI MCH S

Hy xc nh trng thi ca mi transistor v lp bng trng thi cho mi mch tng ng vi
cc bi tp t 125 n 131. Cho bit tn gi ca cng theo chc nng logic tng ng.
125. Hnh P15.6.


















126. Hnh P15.7.













127. Hnh P15.8.

















-220-

128. Hnh P15.9.













129. Hnh P15.10.












130. Hnh P15.11.














131. Hnh P15.12.











-221-

TM TT NI DUNG V CC THYRISTOR & MCH

5-1. Cc thyristor l cc cu kin c ch to t bn lp bn dn (pnpn).
Cc thyristor bao gm diode 4-lp, SCR, LASCR, diac, triac, v PUT.
Diode 4-lp l mt loi thyristor s dn khi in p trn hai in cc vt qu in th nh
thng.
5-2. B chnh lu c iu khin bn dn (SCR) c th c kch dn bng xung cng v chuyn
sang ngng dn bng cch gim dng anode xung di mc dng duy tr quy nh.
nh sng nh mt ngun kch khi trong SCR c kch dn-bng nh sng (LASCR).
5-3. Diac c th dn dng in theo c hai chiu v c chuyn sang dn khi in p nh thng
b vt qu. Diac s chuyn sang ngng dn khi dng gim thp xung di gi tr duy tr.
Triac tng t diac l cu kin hai chiu v c th c chuyn sang dn bng xung cng v
s dn theo mt chiu ty thuc cc tnh in p ngang qua hai in cc anode.

5-4. B chuyn mch c iu khin bng bn dn (SCS) c hai in cc cng v c th chuyn
sang dn bng xung cng cathode v chuyn sang ngng dn bng xung ti cng anode.
5-5. T s dng - ni ti ca transistor mt tip gip (UJT) s quyt nh in p lm cho UJT
chuyn sang dn.
5-6. UJT kh trnh (PUT) c th c lp trnh trc chuyn sang ti mc in p cng
anode mong mun.



B1
BB
r'
r'
q = (5-1) T s dng-ni ti.

P BB pn
V V V q = + (5-2) in p im-nh ca UJT.






















-222-

CU HI v thyristor v cc cu kin khc

1. Mt thyristor c
(a) hai tip gip pn (b) ba tip gip pn
(c) bn tip gip pn (d) ch c hai in cc


2. Cc loi thyristor thng dng gm
(a) BJT & SCR (b) UJT & PUT (c) FET & triac (d) diac & triac


3. Diode 4-lp s chuyn sang dn khi in p anode so vi cathode vt qu
(a) 0,7V (b) in p trn cng
(c) in p nh thng-thun (d) in p chn-thun


4. Khi ang dn, diode 4-lp c th c chuyn sang ngng bng cch
(a) gim dng thp hn gi tr no (b) ngt in p anode
(c) gm c (a) v (b) (d) c (a) v (b) u sai


5. SCR khc vi diode 4-lp bi v
(a) SCR c cc cng (b) SCR khng phi thyristor
(c) SCR khng c 4-lp (d) SCR khng th chuyn sang dn v ngng

6. SCR c th c chuyn sang ngng dn bng cch
(a) chuyn mch lc (b) xung m trn cng
(c) ngt dng anode (d) gm c (a), (b), v (c)
(e) gm (a) v (c)


7. vng chn-thun, SCR l
(a) c phn cc-ngc (b) trng thi ngng dn [off ]
(c) trng thi dn [on] (d) ti im nh thng


8. Gi tr dng gi c quy nh ca mt SCR c ngha l
(a) cu kin s chuyn sang dn khi dng anode vt qu gi tr ny
(b) cu kin s chuyn sang ngng dn khi dng anode gim di gi tr ny
(c) cu kin c th b hng nu dng anode vt qu gi tr ny
(d) dng cng cn phi bng hoc vt qu gi tr ny chuyn cu kin sang dn


9. Diac l
(a) mt loi thyristor (b) cu kin c 2 in cc, dn dng hai chiu
(c) ging nh 2 diode 4-lp mc ngc chiu nhau (d) gm c (a), (b), v (c)


10. Triac l
(a) ging nh SCR, dn dng hai chiu (b) cu kin 4-in cc
(c) khng phi thyristor (d) gm c (a), v (b)


-223-

11. SCS khc vi SCR bi v
(a) SCS khng c cc cng (b) dng gi ca cc SCS thp hn
(c) SCS c th lm vic vi mc dng cao hn nhiu. (d) SCS c hai cc cng


12. SCS c th c chuyn sang dn bng cch
(a) tng in p anode vt qu in p nh thng-thun
(b) a xung dng vo cng cathode
(c) a xung m vo cng anode .
(d) hoc (b) hoc (c)


13. SCS c th c chuyn sang ngng dn bng cch
(a) a xung m vo cng cathode v xung dng vo cng anode
(b) gim dng anode xung mc thp hn tr s dng gi
(c) c (a) v (b) .
(d) a xung dng vo cng cathode v xung m vo cng anode


14. c tnh no sau y khng phi l c tnh ca UJT
(a) t s dng ni ti (b) in tr m
(c) in p im-nh (d) dn in hai bn


15. PUT l cu kin
(a) rt ging vi UJT (b) khng phi l thyristor
(c) kch dn v ngng bng in p cng-anode (d) khng phi cu kin 4-lp
16. IGBT thng c dng trong
(a) cc ng dng cng sut thp (b) cc ng dng cao tn
(c) cc ng dng in p cao (d) cc ng dng dng thp


17. i vi phototransistor, dng base l
(a) thit lp bng in p phn cc (b) t l thun vi nh sng chiu vo
(c) t l nghch vi nh sng chiu vo (d) tt c u sai


18. Trong cp si-quang, nh sng truyn thng qua
(a) li (b) lp v mng bn trong
(c) tng (d) lp v ngoi


19. Nu gc ti ca tia sng c ln hn so vi gc ti hn, th nh sng s
(a) b hp th (b) b phn x
(c) c khuych i (d) b khc x


20. Gc ti hn ca vt liu phn x c xc nh bi
(a) hp th (b) lng phn x
(c) ch s khc x (d) suy gim


-224-

BI TP v cu kin h Thyristor

BI TP C BN

Mc 11-1 C bn v cu kin 4-lp

1. Diode 4-lp trong mch hnh 11.68, c phn cc hot ng vng
dn-thun. Xc nh dng anode vi V
BR(F)
= 20V; V
BE
= 0,7V; v V
CE(sat)
=
0,2V.




2. (a) Xc nh in tr ca mt diode 4-lp vng chn-thun nu c V
AK
= 15V v I
A
= 1A.
(b) Nu in p chn-thun l 50V, th V
AK
cn phi c tng ln mc bao nhiu chuyn
diode vo vng dn-thun?




Mc 11-2 Chnh lu c iu khin (SCR)

3. Hy gii thch nguyn l hot ng ca SCR di dng mch tng ng bng transistor.








4. Bin tr trong mch hnh 11.69, cn phi c iu chnh n gi tr no
chuyn SCR sang ngng dn? Cho bit I
H
= 10mA v V
AK
= 0,7V.








Mc 11-3 Cc mch ng dng ca SCR

5. Hy gii thch c th sa i mch hnh 11.15, nh th no
SCR s c kch khi v dn trong bn k m ca tn hiu vo.







-225-

6. Chc nng ca cc diode D
1
v D
2
trong mch hnh 11.19 l g?




















7. V dng sng ca V
R
ca mch hnh 11.70, theo
cc dng sng vo lin quan cn phi c cho.




Mc 11-4 Diac v Triac

8. V dng sng dng
in ca mch hnh
11.71.
Diac c in th vt
qu nh thng l
20V; I
H
= 20mA.






9. Lp li bi tp 8 cho mch triac hnh 11.72. in p nh
thng l 25V v I
H
= 1mA.




Mc 11-5 B chuyn mch iu khin bng bn dn - SCS

10. Gii thch nguyn l hot
ng bt-ng v bt-m ca
SCS di dng mch tng
ng transistor ca SCS.

-226-

11. Tn gi cc in cc ca SCS.




Mc 11-6 Transistor mt tip gip - UJT

12. Mt UJT c r
B1
= 2,5kO v
r
B2
= 4kO. T s dng ni
ti, q l bao nhiu?
13. Hy xc nh in p im-
nh ca UJT bi tp 12
nu V
BB
= 15V.


14. Tnh khong cc gi tr ca R
1

trong mch hnh 11.73,
m bo bt-ng v bt-m
chnh xc ca UJT.
q = 0,68; V
V
= 15mA;
I
V
= 15mA; I
P
= 10A;
v V
P
= 10V.


Mc 11-7 Transistor mt tip gip kh trnh - PUT

15. in p ti anode (V
A
) l bao nhiu s lm cho mi PUT mch hnh 11.74, bt u chuyn sang
dn in?



16. V dng sng dng in ca mi mch hnh 11.74, khi c in p sin 10V nh ti anode. B
qua in p thun ca PUT.









17. V dng sng in p
ngang qua R
1
trong
mch hnh 11.75,
theo mi lin quan
vi dng sng vo.





-227-

Mc 11-8 BJT c cng cch ly - IGBT

18. Gii thch ti sao IGBT c in tr vo rt cao.


19. Gii thch ti sao dng collector vt qu c th gy ra trng thi cht-ln trong mt IGBT.



Mc 11-9 Quang transistor - Phototransistor

20. Mt phototransistor trong mch c |
DC
= 200. Nu I

= 100A, dng
collector l bao nhiu?

21. Xc nh in p ra ca mch
hnh 11.76, (a) khi ngun
sng tt [OFF], v (b) khi
ngun sng m [ON] (khi
gi thit transistor bo ha).






22. Xc nh dng emitter trong mch photodarlington hnh
11.77, nu i vi mi 1 lm/m
2
ca nh sng chiu vo, s
to ra 1A ca dng base trong Q
1
.








Mc 11-10 SCR kch hot bng nh sng - LASCR

23. Kho st mch hnh 11.78, gii
thch chc nng v nguyn l hot
ng c bn ca mch.











-228-

24. Xc nh dng sng
in p ngang qua R
K

trong mch hnh
11.79.









Mc 11-11 Cc b ghp quang Optical Couplers

25. Mt b ghp quang thc t c t s truyn dng in l 30%. Nu dng vo l 100mA, th dng
ra l bao nhiu?



26. B ghp quang trong mch hnh 11.80, cn phi cung cp t nht 10mA n ti bn ngoi. Nu
t s truyn dng in l 60%, th dng cn phi c cung cp n u vo l bao nhiu?



Mc 11-12 Si quang Fiber Optics

27. Mt tia sng truyn va p trong li ca cp si-quang ti gc ti l 30. Nu gc ti hn ca li
l 15, th tia sng s b phn x hay khc x?





28. Xc nh gc ti hn ca cp si-quang nu li c ch s khc x l 1,55 v lp v mng c ch
s khc x l 1,25.

















-229-

BI TP NG DNG H THNG HOT NG

29. Trong mch
iu khin-tc
ng c
hnh 11.64,
mc in p
cng ca PUT
no s lm cho
ng c in
quay ti tc
nhanh nht:
0V; 2V; hay
5V?









30. SCR trong mch iu khin-tc ng c chuyn sang dn sm hn hay
mun hn trong chu k ac nu gim tr s in tr ca bin tr?






31. Gii thch tc ng SCR khi tng in p trn cng ca PUT trong mch
iu khin-tc ng c.


BI TP NNG CAO

32. Xt mch bo v qu-in p bng
SCR nh hnh 11.20. Vi ngun
cung cp c in p ra dc + 12V, xc
nh tr s ca cc cu kin ca mch
c bo v nu in p ra ca
ngun cung cp vt qu + 15V.
Cu ch c dng nh mc l 1A.









-230-

33. Hy thit k mt mch by in p [crowbar] bng SCR bo v cc mch in t khi vic
tng in p t b ngun cung cp vt qu 6,2V.











34. Hy thit k mch dao ng tch thot [relaxation oscillator] to ra tn s tn hiu l 2,5kHz
bng UJT c q = 0,75 v in p y l 1V. Mch cn phi lm vic t ngun dc + 12V. S dng
cc tr s thit k l I
V
= 10mA v I
P
= 20A.