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BAS16

BAS16
Connection Diagram
3 3 3

A6
2 1 1 2 1 2NC

SOT-23

Small Signal Diode


Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM
TA = 25C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature

Value
85 200 1.0 2.0 -55 to +150 -55 to +150

Units
V mA A A C C

Tstg TJ

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA Power Dissipation Thermal Resistance, Junction to Ambient
TA = 25C unless otherwise noted

Parameter

Value
350 357

Units
mW C/W

Electrical Characteristics
Symbol
VR VF

Parameter
Breakdown Voltage Forward Voltage

Test Conditions
IR = 5.0 A IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 75 V VR = 25 V, TA = 150C VR = 75 V, TA = 150C VR = 0, f = 1.0 MHz IF = IR = 10 mA, IRR = 1.0 mA, RL = 100

Min
85

Max
715 855 1.0 1.25 1.0 30 50 2.0 6.0

Units
V mV mV V V A A A pF ns

IR

Reverse Current

CT trr

Total Capacitance Reverse Recovery Time

2001 Fairchild Semiconductor Corporation

BAS16, Rev. C

BAS16

Small Signal Diode


(continued)

Typical Characteristics

150
Reverse Voltage, VR [v]

140

130

Reverse Current, IR [nA]

Ta= 25 C

300 Ta= 25 C 250 200 150 100 50 0 10 20 30 50 Reverse Voltage, VR [v] 70 100

120

110

5 10 20 30 Reverse Current, IR [uA]

50

100

GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature

Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA

Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V

Forward Voltage, VF [mV]

Forward Voltage, VF [mV]


F

485 Ta= 25 C 450 400 350 300 250 225 1 2 3


F

725 Ta= 25 C 700 650 600 550 500 450 0.1

5 10 20 30 Forward Current, IF [uA]

50

100

0.2 0.3 0.5 1 2 3 Forward Current, IF [mA]

10

Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA

Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA

1.5

1.2 1 0.8 0.6 10

Total Capacitance, C T [pF]


20 30 50 100 200 300 Forward Current, IF [mA] 500

Forward Voltage, VF [V]

1.4

Ta= 25 C

1.3

Ta= 25 C

1.2

1.1

4 6 8 10 Reverse Voltage [V]

12

14 15

Figure 5. Forward Voltage vs Forward Current VF - 10 - 800 mA

Figure 6. Total Capacitance

BAS16, Rev. C

BAS16

Small Signal Diode


(continued)

Typical Characteristics (continued)

Reverse Recovery Time, trr [ns]

Ta= 25 C
400

3.5
C u rre n t [m A ]

500 400

IR

-F

OR WA R

300

CU R

2.5 2

300
200

RE NT

IF

(A V

200
100

1.5 1 10

100
0

Y Io - A V E R A ST VERA G E AT GE R R E C E ECTIF T I F -m IE D IE D C A CU URR R E NTR E -m N T A


)

- A

ST EA D

mA

20

30 40 Reverse Current [mA]

50

60

IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms

50

50

100 100

150 150

o o A Ambient Temperature, TA [ C]

Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10 mA vs 60 mA


500
Power Dissipation, P D [mW]

Figure 8. Average Rectified Current (IF(AV)) versus Ambient Temperature (T A)

400

DO-35 Pkg

300
SOT-23 Pkg

200

100

50 100 150 Average Temperature, IO ( oC)

200

Figrue 9. Power Derating Curve

BAS16, Rev. C

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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4

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