TIP142T TIP147T

Complementary power Darlington transistors

Features

Monolithic Darlington configuration Integrated antiparallel collector-emitter diode

TAB

Application

Linear and switching industrial equipment

1

3 2

Description
The devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

TO-220

Figure 1.

Internal schematic diagrams

R1 typ. = 5 k R2 typ. = 60

R1 typ. = 8 k R2 typ. = 100

Table 1.

Device summary
Marking TIP142T TIP147T Polarity NPN TO-220 Tube PNP Package Packaging

Part number TIP142T TIP147T

May 2010

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Absolute maximum ratings

TIP142T, TIP147T

Absolute maximum ratings

Table 2.
Symbol VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ

Absolute maximum ratings

Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tcase = 25 C Storage temperature Max. operating junction temperature Value 100 100 5 10 20 0.5 90 -65 to 150 150 Unit V V V A A A W C C

Note:

For PNP type voltage and current are negative. Table 3.

Symbol RthJC

Thermal data
Parameter Thermal resistance junction-case __max Value 1.4 Unit C/W

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Electrical characteristics

Electrical characteristics
Tcase = 25 C; unless otherwise specified. Table 4.
Symbol ICBO ICEO IEBO

Electrical characteristics
Parameter Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test conditions VCB = 100 V VCE = 50 V VEB = 5 V Min. Typ. Max. 1 2 2 Unit mA mA mA

Collector-emitter VCEO(sus)(1) sustaining voltage (IB = 0) VCE(sat)(1) VBE(on)(1) hFE(1) Collector-emitter saturation voltage Base-emitter on voltage DC current gain Resistive load Turn-on time Turn-off time

IC = 30 mA IC = 5 A IC = 10 A IC = 10 A IC = 5 A IC = 10 A IB = 10 mA IB = 40 mA VCE = 4 V VCE = 4 V VCE = 4 V

100 2 3 3 1000 500 0.9 4

V V V V

ton toff
1.

RL = 3 IC = 10 A IB1 = -IB2 = 40 mA

s s

Pulse test: pulse duration 300 s, duty cycle 2 %.

Note:

For PNP type voltage and current are negative.

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Electrical characteristics

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Test circuits
Figure 2. Resistive load switching test circuit (NPN type)

1. Fast electronic switch 2. Non-inductive resistor

Figure 3.

Resistive load switching test circuit (PNP type)

1. Fast electronic switch 2. Non-inductive resistor

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Package mechanical data

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

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Package mechanical data

TIP142T, TIP147T

TO-220 type A mechanical data

mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75

0015988_Rev_S

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Revision history

Revision history
Table 5.
Date 21-Jun-2004 20-May-2010

Document revision history

Revision 4 5 Technology change from epitaxial base to planar base island. Changes

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