CNS-EE2: Electronics Circuits (Diodes & Transistors) 1.

When the diode is supplied with a forward direction potential but with a magnitude less than the threshold voltage of the diode, still it will not turn-on and will only allow a very small amount of current to pass. This very small current is known as Ans. cut-off current 2. As the operating temperature of a reverse-biased diode is increased, its leakage of reverse saturation current will Ans. increase exponentially 3. Calculate the new threshold voltage of a germanium diode when it operates at 100 C. Ans. 0.113 V 4. A silicon diode has a reverse saturation current of 50 nA at room temperature. If the operating temperature is raised by 50 C, what is now the reverse saturation current? Ans. 1.66 A 5. In every increase of 10 C in the operating temperature of a diode will cause its reverse saturation current to Ans. double 6. The resistance of the diode that is significant when operating with a small ac signal. Ans. dynamic resistance 7. When a diode is used in large ac voltages, the resistance that is to be considered is Ans. average resistance 8. At forward bias condition, what will happen to the diode resistance when the applied voltage is increased? Ans. will decrease 9. When a diode is reverse biased the depletion region widens, since it is in between positively charge holes and negatively charge electrons, it will have an effect of a capacitor, this capacitance is called what? Ans. transition capacitance 10. In a semiconductor diode, the total capacitance, that is the capacitance between terminals and electrodes, and the internal voltage variable capacitance of the junction is called Ans. diode capacitance What capacitance is significant when the diode is forward biased? Ans. diffusion capacitance The time taken by the diode to operate in the reverse condition from forward conduction. Ans. reverse recovery time

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In operating a diode at high-speed switching circuits, one of the most important parameters to be considered is Ans. reverse recovery time The time required for forward voltage or current to reach a specified value after switching the diode from its reverse-to-forward-biased state. Ans. forward recovery time A certain diode has a maximum power dissipation of 500 mW at room temperature and a liner power derating factor of 5.0 mW/C. How much power the diode can handle if operate4d at 50C? Ans. 375 mW Diode whose negative resistance depends on a specific form of quantummechanical bond structure of the material. Ans. Gunn diode A diode that is especially processed so that its high current flow takes place when the junction is reverse-biased. It is a variation of a tunnel diode. Ans. backward diode A silicon diode that exhibits a very high resistance in both directions up to certain voltage, beyond which the unit switches to a low-resistance conducting state. It can be viewed as two zener diodes connected back-to-back in series. Ans. thyrector A type of Reade diode that uses a heavily doped n-typed material as its drift region. Ans. IMPATT diode A device containing more than one diode. rectifier integrated circuit. Ans. diode pack An example is the full-wave bridge-

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Is the combination of the inductance of the leads and electrodes capacitance of the junction and the resistance f the junction of a semiconductor diode Ans. diode impedance The appearance of RF current oscillations in a dc-biased slab of n-type gallium arsenide in a 3.3 kV electric field. Ans. Gunn effect The device that is formed when an n-type and p-type semiconductors are brought together. Ans. junction diode When the diode is supplied with a forward direction potential but with a magnitude less than the threshold voltage of the diode, still it will not turn-on and will only allow a very small amount of current of pass. This very small current is known as Ans. cut-off current As the operating temperature of a reverse-biased diode is increased, its leakage or reverse saturation current will Ans. increase exponentially

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Calculate the new threshold voltage of a germanium diode when it operates at 100 C. Ans. 0.113 V A silicon diode has a reverse saturation current of 50 nA at room temperature. If the operating temperature is raised by 50 C, what is now the reverse saturation current? Ans. 1.66 A In every increase of 10 C in the operating temperature of a diode will cause its reverse saturation current to Ans. double The resistance of the diode that is significant when operating a small ac signal. Ans. dynamic resistance When a diode is used in large ac voltages, the resistance that is to be considered is Ans. average resistance At forward bias condition, what will happen to the diode resistance when the applied voltage is increased? Ans. will decrease When a diode is reverse biased the depletion region widens, since it is in between positively charge holes and negatively charge electrons, it will have an effect of a capacitor, this capacitance is called what? Ans. transition capacitance In a semiconductor diode, the total capacitance, that is the capacitance between terminals and electrodes, and the internal voltage variable capacitance of the junction is called Ans. diode capacitance What capacitance is significant when the diode is forward biased? Ans. diffusion capacitance The time taken by the diode to operate in the reverse condition from forward conduction. Ans. reverse recovery time In operating a diode at high-speed switching circuits, one of the most important parameters to be considered is Ans. reverse recovery time The time required for forward voltage or current to reach a specified value after switching the diode from its reverse-to-forward-biased state. Ans. forward recovery time A certain diode has a maximum power dissipation of 500 mW at room temperature and a linear power derating factor of 5.0 mW/C. How much power the diode can handle if operated at 50C? Ans. 375 mW

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Diode whose negative resistance depends on a specific form of quantummechanical bond structure of the material. Ans. Gunn diode A diode that is especially processed so that its high current flow takes place when the junction is reverse-biased. It is a variation of a tunnel diode/ Ans. backward diode A silicon diode that exhibits a very high resistance in both directions up to certain voltage, beyond which the unit switches to a low-resistance conducting state. It can be viewed as two zener diodes connected back-to-back in series. Ans. thyrector A type of Read diode that uses a heavily doped n-type material as its drift region. Ans. IMPATT diode

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A device containing more than one diode. An example is the full-wave bridgerectifier integrated circuit. Ans. diode pack 44. It is the combination of the inductance of the leads and electrodes, capacitance of the junction, and the resistance of the junction of a semiconductor diode. Ans. diode impedance 45. The appearance of RF current oscillations in a dc-biased slab of n-type gallium arsenide in a 3.3 kV electric field. Ans. Gunn effect A transistor in which the base is diffused and the emitter is alloyed. collector is provided by the semiconductor substrate into which alloying and diffusion are affected. Ans. alloy-diffused transistor In a semiconductor device, a p-n junction formed by alloying a suitable material such as indium with the semiconductor. Ans. alloy junction A transistor in which one or both electrodes are created by diffusion. Ans. diffused transistor A diffused transistor in which the base, emitter, and collector electrodes are exposed at the face of the wafer which is passivated (has an oxide layer grown on it) to prevent leakage between surface electrodes. Ans. diffused planar transistor A bipolar transistor in which the base region has been diffused in the semiconductor wafer. Ans. diffused-base transistor When n and p materials are both diffused into the semiconductor wafer to provide emitter and base junctions, the transistor is called Ans. diffused-emitter and base transistor The

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A mesa transistor whose base is an n-type layer diffused into a p-type wafer, the p-type wafer serves as the collector. Its emitter is a small p-type area diffused into or alloyed with the n-layer. Ans. diffused-mesa transistor A transistor in which the semiconductor wafer is etched down in steps so the base and emitter regions appear as physical plateaus above the collector region. Ans. mesa transistor An alloy-junction bipolar RF transistor for which the impurity concentration is graded from high on the emitter side of the base wafer to low on the collector side. This creates an internal drift field which accelerates current carriers and raises the upper frequency limit of the transistor. Ans. drift-field transistor A transistor in which a thin metal crystal is overlaid on another mesa crystal. Ans. double-diffused epitaxial mesa transistor In diffused transistors, what do you call a figure expressing the ability of material carriers to diffuse? Ans. diffusion constant A BJT that is made by first growing the emitter and collector regions as a crystal into which the base region is later diffused while the crystal is being pulled. Ans. grown-diffused transistor A junction transistor made by adding different impurities successively to a crystal in its molten state, and then slicing the resulting npn formations from the finished crystal. Ans. grown-junction transistor A transistor having tiny emitter and collector electrodes that are formed by alloying a thin film of impurity material with a collector and emitter pits facing each other on opposite surfaces of the semiconductor wafer Ans. microalloy transistor (MAT) A microalloy transistor having a uniform base region that is diffused into the wafer before the emitter and collector electrodes are produced by alloying Ans. microalloy-diffused transistor The process of growing thin oxide film on the surface of a planar semiconductor device to protect the exposed junction(s) from contamination and shorts. Ans. passivation A planar epitaxial transistor which has been passivated to protect the exposed junctions. Ans. planar epitaxial passivated transistor A transistor in which the emitter, base and collector elements terminate on the same plane of the silicon wafer. Ans. planar transistor

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Usually, a pnp transistor is made by means of electrolysis and electroplating. The emitter and collector are formed on opposite sides of a semiconductor wafer by training two jets of electrolyte against its opposite surfaces to etch and then electroplate the surfaces. Ans. surface-barrier transistor If the base-emitter junction is reversed biased and the base-collector junction is forward biased, the transistor will be at what region of operation? Ans. cut-off region A transistor with =100 is connected as common base, was found to have a leakage current ICBO = 1 A. If the said transistor is configured as common emitter, what is the approximate value of its ICEO? Ans. 100 A How is the collector cut-off or reverse saturation current ICBO related to the emitter cut-off current IEBO? Ans. ICBO IEBO A transistor is said to be configured as common emitter if the emitter terminal is Ans. not used as an input nor output Hybrid parameter that is usually neglected in most circuit analysis. Ans. hr and ho In most transistor input equivalent circuit it comprises of a resistor and a Ans. voltage source The graph of the product of collector-emitter voltage VCE and collector current IC in the transistor output characteristic curve Ans. maximum power curve What will happen to the channel of a JFET as current flows to it? Ans. skews The voltage across the gate-source terminal of a FET that causes drain current ID equals to zero. Ans. pinch-off voltage An early version of the field effect transistor in which limited control of current carriers near the surface of a semiconductor bar or film was obtained by an external field applied transversely. Ans. fieldistor What is the insulator used in most MOS-FET? Ans. SiO2 An n-channel JFET has a drain-source saturation current IDSS = 10 mA and a gate-source pinch-off voltage Vp = -4 V. If the applied reverse gate-source voltage VGS = 2 V, calculate the drain current ID. Ans. 2.5 mA

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Base from Shockleys equation of a JFET, what is the drain current when the applied voltage VGS is exactly equal to the pinch-off voltage VP? Ans. zero In MOSFET, it is the foundation upon which the device will be constructed and is formed from a silicon base Ans. substrate The amount of voltage needed at the gate-source terminal for an enhancement type MOSFET so that a channel can be formed for the current to flow. Ans. threshold voltage To switch off the depletion type MOSFER, the channel should be depleted. Depletion of the channel is done by applying enough voltage across the gate-source terminal. What do you call this voltage? Ans. pinch-off voltage In an n-channel enhancement type MOSFET, the gate voltage should be ______ with respect to the source in order to produce or enhance a channel. Ans. positive To deplete a channel from a p-channel IGFET depletion type, the gate voltage should be ______ with respect to the source terminal. Ans. positive A junction field effect transistor has a drain saturation current of 10 mA and a pinch-off voltage of -4 V. Calculate the maximum transconductance. Ans. 5.0 mS An n-channel MOSFET depletion type has a drain saturation current IDSS = 10 mA and a pinch-off voltage of -4 V. Calculate the maximum transconductance of the transistor. Ans. 5.0 mS Calculate the transconductance of a p-channel MOSFET enhancement type if the gate-source voltage VGS = -8 V, threshold voltage VT = -4 and a constant k = -0.3 mA/V2. Ans. 2.4 mS What will happen to the conductivity of the channel of an enhancement type MOSFER if the proper gate voltage is increased? Ans. decreases The cutoff frequency of a JFET is dependent on channel length by a factor of Ans. 1/L2 An n-channel enhancement type MOSFET has a threshold voltage of VT = 2.5 V. If the applied gate-source voltage VGS = 4 V, what is the approximate drain current ID? Ans. 0.675 mA Which FET has a wide and short effective channel? Ans. V-MOSFET

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The load line position is dependent of Ans. the load resistance and the supply voltage What will happen to the magnitude of the load line slope if the load resistance is increased? Ans. decreases One method of stabilizing transistor circuits is to add an emitter resistance. This resistance causes the load line slope to Ans. become less negative The power gain that is lost due to the emitter bias resistor can be recovered by Ans. shunting a by-pass capacitor

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When a capacitor is involved at the output circuit of a transistor amplifier it would mean Ans. a different dc and ac load line How does the emitter by-pass capacitor affect the dc load line? Ans. it does not affect the dc load line In analyzing the quiescent currents and voltages, on what load line do you refer? Ans. dc load line

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The position of the Q-point along the load line is greatly affected by what component? Ans. base-resistor What will happen to the position of the Q-point if the resistance baseresistor is increased? Ans. it moves downward For a fixed-biased transistor circuit, what will happen to the Q-point when the operation temperature rises? Ans. it moves upward

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100. For a battery operated transistor circuit, where is a good position of the Q-point in order to minimize battery consumption? Ans. near cutoff region 101. When troubleshooting a typical transistor amplifier in the active region, VCE is usually _____ the supply voltage VCC. Ans. about 25% to 75% of 102. Calculate the stability factor due to the variation of ICBO from 1 nA to 21 nA when the temperature changes from room temperature to 100 C. The change in collectorcurrent due to the change of ICBO was found to be 0.5 A. Ans. 25 103. The higher the stability factor means, a transistor circuit that is more sensitive to temperature Ans. variations, and therefore undesired

104. What stability factor that gives the highest value for a typical voltage-divider bias transistor circuit? Ans. S (ICO) 105. Calculate the change in the collector current due to the change in ICO for a transistor circuit at 100 C. ICO at room temperature is given to be 0.1 nA and increases to 20 nA at 100 C. The circuit has a stability factor S(ICO) = 25. Ans. 0.5 A 106. For most common-emitter configuration with different methods of biasing, what is the maximum stability factor due to the change of the reverse saturation current ICO? Ans. + 1 107. What is the approximate output impedance of a common-emitter fixed-bias configuration? The collector resistance RC is the only load resistance/ Ans. RC 108. A FET is biased with a voltage-divider configuration and is set at the active region. Ideally, what is the gate current? Ans. 0 mA 109. What type of FET that can be biased with both negative and positive gate-source voltage VGS? Ans. MOSFET depletion type 110. How do you classify an amplifier used to amplify either amplitude modulated (AM) or frequency modulated (FM) signals? Ans. class S 111. Which class of amplifiers that have the highest efficiency? Ans. class D 112. Transistorized class C power amplifiers will usually have an efficiency of Ans. 33% 113. For pulse-amplification, class D amplifier is mostly used. class D amplifier? Ans. its efficiency reaches over 90% How efficient is a

114. The Q-point of a class D amplifier can be set or positioned at what region in the load line? Ans. any of these 115. What do you call an amplifier that is biased to class C but modulates over the same portion of the curve as if it were biased to class B? Ans. class BC 116. Two class B amplifiers connected such that one amplifies the positive cycle and the other amplifies the remaining negative cycle. Both output signals are then coupled by a transformer to the load. Ans. transformer-coupled push-pull amplifier 117. A push-pull amplifier that uses npn and pnp transistors to amplify the positive and negative cycles respectively. Ans. complementary-symmetry amplifier

118. A push-pull amplifier that uses either npn or pnp as its final stage. configuration looks like the complementary-symmetry. Ans. quasi-complementary push-pull amplifier

The circuit

119. Distortion that is due to the inability of an amplifier to amplify equally well all the frequencies present at the input signal/ Ans. amplitude distortion 120. Calculate the second harmonic distortion for an output signal having a fundamental amplitude of 3 V and a second harmonic amplitude of 0.3 V. Ans. 10 % 121. An amplifier has the following percent harmonic distortions: D2 = 10%, D3 = 5% and D4 = 1%. What is the amplifier %THD? Ans. 11.22% 122. T-equivalent circuit for transistor is considered as a _____ representation/ Ans. physical 123. What transistor model that uses a parameter value that is directly derived from the operating condition? Ans. re or dynamic model 124. The transistor model that is best suited for high frequency applications/ Ans. Giacolleto model 125. Another name of Giacolleto model for transistor modeling is Ans. hybrid-pi model 126. What model is appropriate to use, if for a given transistor amplifier, beta () is the only parameter available and we want to solve for its input and output impedances? Ans. dynamic model 127. When the transistor is operating at saturation region, dc-current is best determined by using what model? Ans. Ebers-Moll model 128. A two-stage transistor amplifier in which the output collector of the first stage provides input to the emitter of the second stage. The final output is then taken from the collector of the second or last stage. Ans. cascode configuration 129. Famous transistor amplifier configuration designed to eliminate the so called Miller effect. Ans. cascode amplifier 130. Transistor arrangement that operates like a darlington but uses a combination of pnp and npn transistors instead of both npn. Ans. feedback pair